DE102019200698A1 - EUV collector for use in an EUV projection exposure system - Google Patents

Abstract

An EUV collector (24) is used in an EUV projection exposure system. The collector (24) is designed to guide EUV Nutzlicht, which is emitted from a plasma source area. At least one structured mischief section (31) of a loading surface (33) of the collector (24) is designed to remove blight radiation (30) by diffraction. The wavelength of the false light (30) differs from that of the useful light. The false light section (31) is designed as a computer-generated hologram. The result is an EUV collector whose collector efficiency is improved. To produce the EUV collector (24), a collector substrate is provided and processed to produce the structured mischief section (31).

Description

The invention relates to an EUV collector for use in an EUV projection exposure system. Furthermore, the invention relates to a method for producing such an EUV collector, a lighting system with such a collector, an optical system with such an illumination system, a projection exposure apparatus with such an optical system, a manufacturing method for producing a micro- or nanostructured component and a micro- or nanostructured component produced by this method.

An EUV collector of the type mentioned is known from the WO 2017/174423 A1 , from the US 2013/0335816 A1 and from the US Pat. No. 7,084,412 B2 ,

It is an object of the present invention to develop an EUV collector of the aforementioned type such that its collector efficiency is improved. In addition, if possible, the manufacturing costs for the EUV collector should be reduced in comparison to the prior art.

This object is achieved by an EUV collector with the features specified in claim 1.

The stray light radiation can be pump light reflected from the plasma source region and used to generate a plasma in the plasma source region. The stray light radiation is, in particular, radiation components of the pump light, for example IR radiation components, which may have a wavelength of 10.6 μm, for example. The removal of the untreated light can be carried out by guiding the untreated paper toward a false-light trap, by guiding the untreated paper toward another use of false-light as well as by absorption or dissipation of the untreated film.

Execution of the diffractive diffractive section of the collector as a computer-generated hologram (CGH) allows diffraction direction or directions of diffraction of the diffracted light diffracted from a certain location of the buff section depending on location, that is, from which location of the baffle section the diffraction takes place, pretend. With the CGH mischief section, it is thus possible to achieve a complex diffraction direction prediction and thus a complex distribution of the discharge directions of the mop from the mop section. This makes it possible to take into account, in particular, installation space requirements when removing the false light. The mischief may then be guided in a defined manner to one or more discharge locations. A distribution of the discharged mischief over a discharge surface of a respective discharge location can be specified via the design of the CGH false-light section, which can be used in particular to avoid thermal overload at the discharge, for example by absorption / residual absorption of stray light.

Diffraction angles that can be realized with a CGH diffraction structure of the stray light section can be in the range of 10 mrad and, for example, in the range between 1 mrad and 200 mrad. On a beam path for the EUV useful light after the collector, for example, 1.5 m, a deflecting diffraction effect of the false light section in the range of 15 mm may be sufficient. The diffraction angle depends in a known manner on the lattice equation of a wavelength of the false light, a period of the diffraction structures and an angle of incidence of the false light on the CGH diffraction structure.

The collector can be designed so that it acts as a diffractive for the false light and for the EUV Nutzlicht practically exclusively geometric-optical, ie in particular reflective.

The collector as a whole can be designed as a normal incidence (NI) collector with an incident angle of the incident EUV light of at most 45 °. Alternatively, it is possible to design at least one subunit of the collector as an NI unit, with at least one further subunit then also serving as a subunit for incidence of the EUV useful light with an incident angle of more than 45 ° (grazing incidence loading, GI unit). is executed.

n(x) ist hierbei das Brechungsindexprofil über eine Ortskoordinate x des Falschlicht-Abschnitts.A mischief section with a height profile, ie a location-dependent structure height, and / or with a refractive index profile, ie a location-dependent refractive index, according to claim 2 can be designed such that a resulting complex amplitude at each location on the mischief section a constant Amount. This amount can be one. The complex amplitude can be a pure phase function. The following term enters the complex amplitude: $${\text{e}}^{-\text{in}\left(\text{x}\right)\text{H}\left(\text{x}\right)}{\text{e}}^{\mathrm{\kappa }\left(\text{x}\right)\text{H}\left(\text{x}\right)}$$

Here n (x) is the refractive index profile over a location coordinate x of the stray light section.

h (x) is the height profile over the location coordinate x of the mischief section.

κ (x) is the absorption coefficient of the mischief section, which may also depend on the location coordinate x.

An embodiment of the false-light section according to claim 3 reduces the burden of the individual discharge with the stray light. The discharge locations may be arranged with a small distance relative to the collector dimensions to a respective region of the false light section, from which the stray light is guided to the respective discharge point. This reduces the requirements for the accuracy of a diffraction angle of the respective area of the stray light section.

At least one beam dump can be arranged in each case in the region of the discharge sites.

At least one false light supplemental section according to claim 4, which may also be used to remove stray light radiation, for example by diffraction, may be simpler than the CGH stray light section. Examples of the design of such a misleading additional section are the WO 2017/174423 A1 , Also, the false light addition section can basically be designed as CGH.

A diffraction grating of the false light addition section according to claim 5 may be implemented as a blazed diffraction grating or a binary diffraction grating. In the diffractive positive structures, a real part of a phase of the diffraction structure at the respective location x is greater than 0. In the diffraction negative structures, a real part of a phase of the diffraction structure at the respective location x is smaller than 0. Between the diffraction positive structures and the intermediate diffraction patterns Negative structures may have a balanced area ratio in the range between 2: 1 and 1: 2, in particular in the range between 1.2: 1 and 1: 1.2, in particular in the range between 1.1: 1 and 1: 1.1, in particular in Range of 1 present. The diffraction grating of the false light addition section can be designed as a blazed diffraction grating or as a binary diffraction grating or else as a ternary grating or as a higher-order grating. The diffraction positive structures and the diffraction negative structures can be compensated in this way so that the same proportion of diffraction positive structures and diffraction negative structures are present over the entire false light addition section on the other hand.

The diffraction grating can be produced by material-removing or by material-applying processing methods, in particular by etching with mask exposure, direct laser exposure or by other exposure methods. A diffraction efficiency of the diffraction grating may be very small in the 0th order. A suppression of the diffraction grating, that is a ratio between a diffraction efficiency in the 0th order and a diffraction efficiency in higher orders, may be smaller than 1/1000 and in particular may be 1 / 10,000.

A depth of diffraction negative structures may depend on a position of the respective diffraction groove on the loading surface of the collector. In this way, different angles of incidence of the single light on the respective region of the false light section and / or the false light additional section can be taken into account.

In certain embodiments of the collector can also be dispensed with CGH on a false light section.

In an embodiment according to claim 6, a diffraction structure in a substrate of the EUV collector can already be prefabricated and transmits to the coating when coating the loading surface, in particular with a multilayer coating which acts as a highly reflective coating for the EUV useful light then there is a corresponding diffraction structure for the stray light.

A highly reflective multilayer coating according to claim 7 can also be applied on flanks between diffraction positive structures and diffraction negative structures. A multilayer coating may be applied to a blazed diffraction grating of the substrate of the collector. Layer planes of the multilayer coating can follow blaze angles of the substrate-side blazed diffraction grating.

As an alternative to a diffraction structure fabrication, in which the diffraction structure is produced in substrate and then coated, the diffraction structure can also be produced by providing a, for example, unstructured substrate with a coating, in particular a multilayer coating, and subsequently the coating is structured so that the desired diffraction structures arise. These two methods "coating of the structured substrate" and "patterning of a substrate coating" can also be combined with one another.

A repeating pattern for the mischief section and / or mischief addition section of claim 8 simplifies its manufacture. Also juxtaposed pattern pieces or overlapping or intersecting pattern pieces are possible in the design of the diffraction structures.

Discretely oriented extending diffraction structures according to the first variant in claim 9 may be embodied as a meander pattern, as a labyrinth pattern or as a pattern, which are known from mathematical theory, for example in the manner of a Hilbert curve or in the manner of a Gosper curve.

A linear course of the diffraction structures according to the further variant of claim 9 can be realized as a spiral or as a plurality of nested spirals. A radial structure can also be used here. Some radii of such a diffractive radial structure may be designed so that they do not extend to the center of the radial structure. The diffraction structures may be in the form of concentric circles, concentric squares, concentric squares, concentric triangles, concentric ellipses, hyperbola, concentric or predetermined pitch of centers, semicircles or semi-parabolas, as straight lines or as crossed lines Parabolas or be designed as curved and, for example, parabolic spokes.

In a design of the diffraction structures in the form of a two-dimensional grid according to a further variant of claim 9, a square unit cell, a rectangular unit cell or a hexagonal unit cell of the grid may be present. In principle, such a unit cell can be any n-sided area which is periodically continuable in two dimensions and whose entirety completely covers a total area of the mischief section and / or the mischief addition section without overlapping. The respective unit cell can be filled in sections with diffraction positive structures or with diffraction negative structures in each case, which can be designed as squares, as rectangles or as cylinders with a circular cross section.

A design of the diffraction structures in the form of a surface-filling tiling according to a further variant of claim 9 may be in the form of a chess board, in the form of a polygonal / polygenic structure. Such tiling may be periodic, quasi-periodic or aperiodic.

The design of the diffraction structures in the form of a random pattern according to a further variant of claim 9 may be designed in the manner of a zebra pattern or also in the manner of a thread fabric, in particular with a preferred direction. A unit cell of the diffractive structures may have a typical dimension which is smaller than a coherence length of the used or false light used. The diffraction positive structures and the diffraction negative structures of respective diffraction structures can balance each other like a binary lattice.

A surface of the CGH structure of the false light section and / or the false light additional section can be understood as a hilly structure, in which in particular diffraction positive structures and diffraction negative structures alternate. The diffraction positive structures and / or the diffraction negative structures may be designed in the manner of a blazed grating with certain diffraction orders with respect to the reflection effect preferred orientations.

Another object of the invention is to provide a manufacturing method for such EUV collector.

This object is achieved by a method having the features specified in claim 10. The advantages of such a production process are evident from those which have already been explained above.

Processing of the substrate can take place sequentially pointwise, sequentially linearly or simultaneously over the surface of the false light section. A structured mischief section produced by substrate processing can subsequently be provided with a coating which can be embodied as a multilayer coating.

A relative movement according to claim 11 enables the generation of more complex diffraction structures. Alternatively, the substrate may be processed so that there is no relative movement between the substrate and the patterning unit to produce the structured mischief section. No such relative movement can take place, in particular, in an optical pattern generation process.
During processing, the substrate can be rotated relative to the structuring unit.

An azimuth of a rotational relative position between the substrate and the structuring unit can be sensed or detected, for example, via a mechanical marking. When editing, in particular, a line-guided movement of the structuring unit can additionally take place.

An editing by removal of substrate material according to claim 12 can be carried out as a machining. An editing by electromagnetic removal of substrate material can be done for example by means of a processing laser or in the form of a lithographic patterning. A material removal can also be done chemically, for example by an etching process, or can be done physically by ion bombardment or galvanically or optically by laser ablation or thermally by melting.

Alternatively or in addition to a material removal, a material order for structure production can also be made. A material application can be done by PVD or CVD.

Alternatively, the machining can also be done by molding a substrate, for example by stamping and / or embossing.

These processing variants can ensure a precise generation of a diffraction structure.

A switching of the radiation source between an active structuring mode and an inactive mode according to claim 13 can take place by means of switching the radiation source on / off or else by means of a shutter which can be introduced in sections in a beam path of the radiation source.

An optical predefined component of the structuring unit according to claim 14 can be designed as a diffraction component or as a projection template for a remote projection or alternatively for a close-up projection.

The advantages of a lighting system according to claim 15 correspond to those which have already been explained above with reference to the EUV collector according to the invention.

The illumination system can be designed with the above-described running light section so that a homogeneous distribution of the stray light in the area of stray light Abführorten and, for example, in the range of this provided beam dumps. Alternatively or additionally, with the collector sections designed as computer-generated holograms, an optimal distribution function of the useful light can be ensured, in particular in specific sections of an illumination beam path of the illumination system, for example in the area of a pupil plane.

The illumination system may be designed with a so-performed mop section of the collector such that a bundle diameter of illumination light sub-beams in a pupil plane of the illumination optics deviates from a circular shape so small that the bundle diameter regardless of the direction in which this diameter is measured less than 20% deviates from a mean diameter, that is essentially has a circular diameter.

The advantages of an optical system according to claim 16, a projection exposure apparatus according to claim 17, a manufacturing method according to claim 18 and a micro- or nanostructured component according to claim 19 correspond to those which have already been explained above with reference to the collector according to the invention.

In particular, a semiconductor component, for example a memory chip, can be produced with the projection exposure apparatus.

• 1 schematisch eine Projektionsbelichtungsanlage für die EUV-Mikrolithographie;
• 2 Details einer Lichtquelle der Projektionsbelichtungsanlage im Umfeld eines EUV-Kollektors zur Führung von EUV-Nutzlicht von einem Plasma-Quellbereich hin zu einem Feldfacettenspiegel einer Beleuchtungsoptik der Projektionsbelichtungsanlage, wobei der EUV-Kollektor in einem Meridionalschnitt dargestellt ist;
• 3 in einer im Vergleich zur 3 abstrakteren Darstellung eine Führung einerseits von EUV-Nutzlicht und andererseits von wellenlängenverschiedenem Falschlicht bei einer Reflexion/Beugung am EUV-Kollektor;
• 4 stark vergrößert und im Querschnitt einen Bereich eines Falschlicht-Zusatz-Abschnitts einer Beaufschlagungsfläche des EUV-Kollektors, ausgeführt als Mehrlagen-Beschichtung, in deren oberste Lagen eine Blaze-Strukturierung zur Erzeugung eines Blaze-Beugungsgitters für das Falschlicht ausgeführt ist;
• 5 eine Variante der Mehrlagen-Beschichtung nach 4 mit einer Polierschicht zwischen der Mehrlagen-Beschichtung und einem Substrakt sowie mit einer Deckschicht auf der Blaze-Strukturierung der obersten Lagen der Mehrlagen-Beschichtung;
• 6 schematisch eine Skizze zur Verdeutlichung einer Blaze-Bedingung einerseits bei Littrow-Anordnung (α = (β) und andererseits bei einem vom Einfallswinkel verschiedenen Ausfallswinkel;
• Fig . 7 in einer zu 4 ähnlichen Darstellung eine weitere Ausführung eines Falschlicht-Zusatz-Abschnitts des EUV-Kollektors, ausgeführt mit einer Mehrlagen-Beschichtung, die für das Nutzlicht als hochreflektierende Beschichtung und für das Falschlicht als beugendes Binärgitter ausgeführt ist;
• 8 bis 10 in zur 7 ähnlichen Darstellungen weitere Ausführungen eines Falschlicht-Zusatz-Abschnitts des Kollektors mit Mehrlagen-Beschichtungen, die für das Falschlicht wiederum jeweils als beugendes Binärgitter gestaltet sind;
• 11 schematisch im Schnitt eine Ausführung des EUV-Kollektors mit einfallswinkelabhängiger und damit von einer Position auf der Beaufschlagungsfläche des Kollektors abhängiger Tiefe von Beugungs-Negativstrukturen eines Binärgitters des Falschlicht-Zusatz-Abschnitts;
• 12 in einer zu den 7 bis 10 ähnlichen, im Vergleich hierzu wiederum bereichsweisen Darstellung eine Variante einer Ausführung einer Mehrlagen-Beschichtung, die auch im Bereich einer Flanke einer beugenden Binärgitter-Struktur mehrlagig ausgeführt ist;
• 13 in einer zu 4 ähnlichen Darstellung eine weitere geblazte Gestaltung einer Mehrlagen-Beschichtung, bei der Schichtebenen der Mehrlagen-Beschichtung einem Blazewinkel eines substratseitigen Blaze-Beugungsgitters folgen;
• 14 in einer Aufsicht einen Bereich eines Falschlicht-Zusatz-Abschnitts des EUV-Kollektors, ausgeführt als Beugungsgitter für das Falschlicht mit Linienhaft und diskret orientiert verlaufenden Abschnitten von Beugungs-Positivstrukturen („Berge/Stege“) zwischenliegenden Beugungs-Negativstrukturen („Täler/Nuten“);
• 15 in einer zu 14 ähnlichen Darstellung einen größeren Abschnitt des Falschlicht-Zusatz-Abschnitts mit wiederholtem Ansetzen von Beugungsgitterstrukturen nach 14;
• 16 in einer Aufsicht eine schematische Darstellung, die eine beugende Wirkung eines Beugungsgitters mit diskret orientierten Beugungs-Positivstrukturen und Beugungs-Negativstrukturen verdeutlicht;
• 17 in einer perspektivischen Aufsicht eine weitere Ausführung eines Beugungsgitters für das Falschlicht mit diskret orientierten Beugungs-Positivstrukturen und Beugungs-Negativstrukturen;
• 18 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt als Hilbert-Kurve;
• 19 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs-Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt als Gosper-Kurve;
• 20 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt als Spiralkurve;
• 21 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt mit drei ineinander verlaufenden Spiralkurven;
• 22 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt mit mehreren einander teilweise überdeckenden Spiralkurven mit voneinander beabstandeten Ursprüngen;
• 23 in einer zu 3 ähnlichen Darstellung schematisch eine beugende Wirkung eines als Spiralkurve nach den 20 oder 21 ausgeführten Beugungsgitters auf das Falschlicht;
• 24 in einer zu 3 ähnlichen Darstellung schematisch eine beugende Wirkung eines als Spiralstruktur mit mehreren einander teilweise überdeckenden Spiralen nach 22 ausgeführten Beugungsgitters auf das Falschlicht;
• 25 in einer zu 16 ähnlichen Aufsicht eine Veranschaulichung einer beugenden Wirkung einer Spiralstruktur nach 20 hin zu einer Falschlicht-Absorber/Ableitstruktur (beam dump);
• 26 ein einer zu 25 ähnlichen Darstellung die beugende Wirkung einer Spirale des Beugungsgitters nach 22 hin zum beam dump;
• 27 in einer Aufsicht einen Bereich eines Falschlicht-Abschnittes des EUV-Kollektors, ausgeführt als computergeneriertes Hologramm (CGH);
• 28 in einer zu den 23 und 24 ähnlichen Darstellung eine beugende Wirkung des Falschlicht-Abschnitts nach 27;
• 29 in einer Aufsicht eine Anordnung von vier Pupillenfacetten eines Pupillenfacettenspiegels der Beleuchtungsoptik der Projektionsbelichtungsanlage, wobei eine Ausleuchtung der Pupillenfacetten mit dem EUV-Nutzlicht nach der Führung des EUV-Nutzlichts durch den EUV-Kollektor mit dem Falschlicht-Abschnitt nach 27 dargestellt ist;
• 30 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt als Radialstruktur;
• 31 eine weitere Ausführung eines Beugungsgitters mit diskret orientierten Beugungs- Positivstrukturen und Beugungs-Negativstrukturen, ausgeführt als Radialstruktur mit einer weiteren Ausführung einer Radialstruktur mit unterschiedlicher radialer Erstreckung bis zu einer gemeinsamen Umfangsberandung;
• 32 in einer zu 22 ähnlichen Darstellung eine Variante einer Anordnung von Spiralstrukturen auf dem Falschlicht-Zusatz-Abschnitt, bei der die einzelnen Spiralen einander durchdringen;
• 33 stark schematisch eine Vorrichtung zur Herstellung eines EUV-Kollektors mit einem Falschlicht-Abschnitt und/oder einem Falschlicht-Zusatz-Abschnitt nach einer der vorstehend dargestellten Ausführungen;
• 34 schematisch in einer Seitenansicht eine weitere Ausführung einer Vorrichtung zur Herstellung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts einer der vorstehend dargestellten Varianten des EUV-Kollektors;
• 35 schematisch in einer Seitenansicht eine weitere Ausführung einer Vorrichtung zur Herstellung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts einer der vorstehend dargestellten Varianten des EUV-Kollektors;
• 36 schematisch in einer Seitenansicht eine weitere Ausführung einer Vorrichtung zur Herstellung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts einer der vorstehend dargestellten Varianten des EUV-Kollektors;
• 37 zwei Varianten für einen Querschnitt eines Schreibstrahls bei Einsatz einer Herstellvorrichtung nach einer der 34 bis 36;
• 38 zwei Varianten eines transversalen Intensitätsprofils eines Schreibstrahls bei Einsatz einer Herstellvorrichtung nach einer der 34 bis 36;
• 39 in einer Aufsicht stark schematisch verschiedene Varianten einer Schreibkopf- und Schreibweg/Schreibpfadgestaltung bei Nutzung einer Herstellvorrichtung nach 33;
• 40 in einer zu 33 ähnlichen Darstellung eine weitere Ausführung einer Herstellvorrichtung für einen Falschlicht-Abschnitt und/oder einen Falschlicht-Zusatz-Abschnitt eines EUV-Kollektors nach einer der vorstehend dargestellten Varianten;
• 41 eine Ausführung von Hilfsmarkierungen zur Bestimmung einer Azimut-Position bei der Herstellung einer Beugungsstruktur nach 20 mit einer Herstellvorrichtung nach 40;
• 42 in einer zu 41 ähnlichen Darstellung eine weitere Ausführung einer Gestaltung einer Hilfsmarkierung, in diesem Fall gestaltet als mechanischer Anschlag;
• 43A in einer zu 40 ähnlichen Darstellung eine weitere Ausführung einer Herstellvorrichtung zur Erzeugung eines Falschlicht-Abschnittes und/oder eines Falschlicht-Zusatz-Abschnitts eines EUV-Kollektors gemäß einer der vorstehenden Darstellungen;
• 43B eine perspektivische Ansicht der Herstellvorrichtung nach 43A;
• 43C eine schematische Seitenansicht einer weiteren Ausführung einer Herstellvorrichtung zur Erzeugung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts eines EUV-Kollektors gemäß einer der vorstehenden Darstellungen;
• 44 eine schematische Seitenansicht einer weiteren Ausführung einer Herstellvorrichtung zur Erzeugung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts eines EUV-Kollektors gemäß einer der vorstehenden Darstellungen;
• 45 in einer zu den 34 bis 36 ähnlichen Darstellung, die in Bezug auf ein zu strukturierendes Substrat stärker schematisch ist, eine weitere Ausführung einer Herstellvorrichtung für einen Falschlicht-Abschnitt und/oder einen Falschlicht-Zusatz-Abschnitt eines EUV-Kollektors gemäß einer der vorherigen Darstellungen;
• 46 in einer zu den 34 bis 36 ähnlichen Darstellung, die in Bezug auf ein zu strukturierendes Substrat stärker schematisch ist, eine weitere Ausführung einer Herstellvorrichtung für einen Falschlicht-Abschnitt und/oder einen Falschlicht-Zusatz-Abschnitt eines EUV-Kollektors gemäß einer der vorherigen Darstellungen;
• 47 in einer zu den 34 bis 36 ähnlichen Darstellung, die in Bezug auf ein zu strukturierendes Substrat stärker schematisch ist, eine weitere Ausführung einer Herstellvorrichtung für einen Falschlicht-Abschnitt und/oder einen Falschlicht-Zusatz-Abschnitt eines EUV-Kollektors gemäß einer der vorherigen Darstellungen;
• 48 drei Momentandarstellungen eines schematischen Ablaufs eines Herstellungsverfahrens zur Erzeugung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts eines EUV-Kollektors gemäß einer der vorhergehenden Darstellungen unter Verwendung eines Stempels;
• 49A in einer zu 48 ähnlichen Darstellung ein weiteres Stempel-Herstellungsverfahren;
• 49B eine Seitenansicht einer weiteren Ausführung einer Herstellvorrichtung zur Erzeugung eines Falschlicht-Abschnitts und/oder eines Falschlicht-Zusatz-Abschnitts eines EUV-Kollektors gemäß einer der vorstehenden Darstellungen;
• 49C eine Aufsicht aus Blickrichtung ILc in 49B;
• 50 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen in einem quadratischen Grundgitter angeordnet sind;
• 51 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen in einem hexagonalen Grundgitter angeordnet sind;
• 52 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und zwischenliegende Beugungs-Negativstrukturen nach Art eines Schachbretts angeordnet sind;
• 53 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und die zwischenliegenden Beugungs-Negativstrukturen nach Art einer polygenen Struktur (Parkettierung) angeordnet sind, wobei die Strukturen auch nach Art eines binären, ternären oder auch quaternären Gitters angeordnet sein können;
• 54 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und die zwischenliegenden Beugungs-Negativstrukturen wiederum nach Art einer polygenen Struktur (Parkettierung) angeordnet sind, wobei die Strukturen auch nach Art eines binären, ternären oder auch quaternären Gitters angeordnet sein können;
• 55 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und die zwischenliegenden Beugungs-Negativstrukturen wiederum nach Art einer quasi-periodischen polygenen Struktur (Parkettierung) angeordnet sind, wobei die Strukturen auch nach Art eines binären, ternären oder auch quaternären Gitters angeordnet sein können;
• 56 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und die zwischenliegenden Beugungs-Negativstrukturen wiederum nach Art einer quasi-periodischen polygenen Struktur (Parkettierung) angeordnet sind, wobei die Strukturen auch nach Art eines binären, ternären oder auch quaternären Gitters angeordnet sein können;
• 57 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen und die zwischenliegenden Beugungs-Negativstrukturen wiederum nach Art eines Zufallsmusters angeordnet sind, wobei eine Fläche aller Beugungs-Positivstrukturen so groß ist wie eine Fläche aller Beugungs-Negativstrukturen, also ein ausgeglichenes Flächenverhältnis in einer Einheitszelle vorliegt;
• 58 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei die Beugungs-Positivstrukturen in einem quadratischen Grundgitter angeordnet sind, wobei Binärstrukturen des Beugungsgitters als konzentrische Rechtecke ausgeführt sind;
• 59 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als konzentrische Dreiecke ausgeführt sind;
• 60 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als konzentrische Ellipsen ausgeführt sind;
• 61 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als Hyperbel-Linien ausgeführt sind;
• 62 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als Halbkreise ausgeführt sind;
• 63 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als Halbparabeln ausgeführt sind;
• 64 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als gerade verlaufende Linien ausgeführt sind;
• 65 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als gekreuzte Parabeln ausgeführt sind;
• 66 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts bzw. einer gesamten Kollektorfläche einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als von einem Ursprung ausgehend sich radial nach außen auffächernde Mehrzahl von speichenartigen Parabeln ausgeführt sind;
• 67 und 68 in einer beispielsweise zur 20 ähnlichen Aufsicht-Darstellung eine weitere Ausführung von Beugungs-Positivstrukturen und Beugungs-Negativstrukturen eines Beugungsgitters für das Falschlicht in einem Bereich eines Falschlicht-Zusatz-Abschnitts einer weiteren Ausführung des EUV-Kollektors, wobei Binärstrukturen des Beugungsgitters als Zufallsmuster ausgeführt sind;
• 69 in einer zu 62 ähnlichen Darstellung eine Ausgestaltung eines Binärgitters aus quadrantenweise aneinander angesetzten Kreisbogenabschnitten.

Embodiments of the invention will be explained in more detail with reference to the drawing. In this show:

• 1 schematically a projection exposure system for EUV microlithography;
• 2 Details of a light source of the projection exposure apparatus in the vicinity of an EUV collector for guiding EUV useful light from a plasma source area to a field facet mirror of a lighting optical system of the projection exposure apparatus, wherein the EUV collector is shown in a meridional section;
• 3 in one compared to 3 more abstract representation a guide on the one hand of EUV Nutzlicht and on the other hand of different wavelengths of stray light at a reflection / diffraction at the EUV collector;
• 4 greatly enlarged and in cross-section a portion of a false light addition portion of an application surface of the EUV collector, carried out as a multilayer coating, in whose uppermost layers a Blaze structuring is carried out to produce a Blaze diffraction grating for the stray light;
• 5 a variant of the multilayer coating after 4 with a polishing layer between the multilayer coating and a sub-coat and with a topcoat on the blaze structure of the top layers of the multilayer coating;
• 6 schematically a sketch to illustrate a Blaze condition on the one hand Littrow arrangement (α = (β) and the other at a different angle of incidence from the angle of incidence;
• Fig. 7 in one too 4 a similar embodiment, a further embodiment of a false-light additional portion of the EUV collector, carried out with a multilayer coating, which is designed for the Nutzlicht as a highly reflective coating and for the stray light as a diffractive binary grating;
• 8th to 10 in to 7 similar representations further embodiments of a false-light additional portion of the collector with multilayer coatings, which are designed in turn for the false light each as a diffractive binary grating;
• 11 schematically in section an embodiment of the EUV collector with incident angle-dependent and thus dependent on a position on the loading surface of the collector depth of diffraction negative structures of a binary grating of the false light addition section;
• 12 in one of the 7 to 10 a variant of an embodiment of a multilayer coating, which is designed to be multi-layered even in the region of an edge of a diffractive binary grating structure;
• 13 in one too 4 Similarly, another blazed design of a multilayer coating, wherein the layer planes of the multilayer coating follow a blaze angle of a substrate-side Blaze diffraction grating.
• 14 in a plan view of an area of a false light addition section of the EUV collector, designed as a diffraction grating for the stray light with linear and discretely oriented extending sections of diffraction positive structures ("mountains / webs") intervening diffraction negative structures ("valleys / grooves");
• 15 in one too 14 Similarly, a larger portion of the false light addition section with repeated application of diffraction grating structures after 14 ;
• 16 in a plan view, a schematic representation illustrating a diffractive effect of a diffraction grating with discretely oriented diffractive positive structures and diffraction negative structures;
• 17 in a perspective view another embodiment of a diffraction grating for the false light with discretely oriented diffraction positive structures and diffraction negative structures;
• 18 a further embodiment of a diffraction grating with discretely oriented diffraction positive structures and diffraction negative structures, executed as a Hilbert curve;
• 19 a further embodiment of a diffraction grating with discretely oriented diffractive positive structures and diffraction negative structures, designed as a Gosper curve;
• 20 a further embodiment of a diffraction grating with discretely oriented diffraction positive structures and diffraction negative structures, executed as a spiral curve;
• 21 a further embodiment of a diffraction grating with discretely oriented diffraction positive structures and diffraction negative structures, carried out with three spiral curves running one inside the other;
• 22 a further embodiment of a diffraction grating with discretely oriented diffraction positive structures and diffraction negative structures, carried out with several mutually partially overlapping spiral curves with spaced-apart origins;
• 23 in one too 3 similar representation schematically a diffractive effect of a spiral curve after the 20 or 21 executed diffraction grating on the false light;
• 24 in one too 3 similar representation schematically a diffractive effect of a spiral structure with several mutually partially overlapping spirals after 22 executed diffraction grating on the false light;
• 25 in one too 16 similar supervision an illustration of a diffractive effect of a spiral structure after 20 towards a false light absorber / lead-off structure (beam dump);
• 26 one to one 25 similar representation after the diffractive effect of a spiral of the diffraction grating after 22 towards the beam dump;
• 27 in a plan view of an area of a stray light section of the EUV collector, executed as a computer-generated hologram (CGH);
• 28 in one of the 23 and 24 similar representation of a diffractive effect of the mischief section after 27 ;
• 29 an arrangement of four pupil facets of a Pupillenfacettenspiegels the illumination optics of the projection exposure system, wherein an illumination of the pupil facets with the EUV Nutzlicht after guiding the EUV Nutzlichts by the EUV collector with the stray light section after 27 is shown;
• 30 a further embodiment of a diffraction grating with discretely oriented diffractive positive structures and diffractive negative structures, designed as a radial structure;
• 31 a further embodiment of a diffraction grating with discretely oriented diffractive positive structures and diffraction negative structures, designed as a radial structure with a further embodiment of a radial structure with different radial extent up to a common peripheral boundary;
• 32 in one too 22 a similar representation of a variant of an array of spiral structures on the false light addition section in which the individual spirals penetrate each other;
• 33 very schematically a device for producing an EUV collector with a stray light section and / or a false-light additional section according to one of the embodiments shown above;
• 34 schematically in a side view of another embodiment of an apparatus for producing a false-light portion and / or a false-light additional portion of one of the variants of the EUV collector shown above;
• 35 schematically in a side view of another embodiment of an apparatus for producing a false-light portion and / or a false-light additional portion of one of the variants of the EUV collector shown above;
• 36 schematically in a side view of another embodiment of an apparatus for producing a false-light portion and / or a false-light additional portion of one of the variants of the EUV collector shown above;
• 37 two variants for a cross section of a writing beam when using a manufacturing device according to one of 34 to 36 ;
• 38 two variants of a transverse intensity profile of a writing beam when using a manufacturing device according to one of 34 to 36 ;
• 39 in a plan very schematically different variants of a write head and write path / Schreibpfadgestaltung when using a manufacturing device according to 33 ;
• 40 in one too 33 a similar view of another embodiment of a manufacturing device for a mischief section and / or a mischief additional section of an EUV collector according to one of the variants shown above;
• 41 an embodiment of auxiliary markers for determining an azimuth position in the manufacture of a diffraction structure according to 20 with a manufacturing device according to 40 ;
• 42 in one too 41 similar representation of a further embodiment of a design of an auxiliary marker, designed in this case as a mechanical stop;
• 43A in one too 40 a similar embodiment, a further embodiment of a production device for producing a false-light section and / or a false-light additional section of an EUV Collector according to one of the above representations;
• 43B a perspective view of the manufacturing device according to 43A ;
• 43C a schematic side view of another embodiment of a manufacturing device for producing a mischief section and / or a mischief additional portion of an EUV collector according to one of the above representations;
• 44 a schematic side view of another embodiment of a manufacturing device for producing a mischief section and / or a mischief additional portion of an EUV collector according to one of the above representations;
• 45 in one of the 34 to 36 similar representation, which is more schematic with respect to a substrate to be structured, another embodiment of a manufacturing device for a mischief section and / or a mischief additional section of an EUV collector according to one of the previous representations;
• 46 in one of the 34 to 36 similar representation, which is more schematic with respect to a substrate to be structured, another embodiment of a manufacturing device for a mischief section and / or a mischief additional section of an EUV collector according to one of the previous representations;
• 47 in one of the 34 to 36 similar representation, which is more schematic with respect to a substrate to be structured, another embodiment of a manufacturing device for a mischief section and / or a mischief additional portion of an EUV collector according to one of the previous representations;
• 48 3 shows instantaneous diagrams of a schematic sequence of a production method for producing a stray light section and / or a stray additional section of an EUV collector according to one of the preceding illustrations using a stamp;
• 49A in one too 48 similar representation another stamp manufacturing process;
• 49B a side view of another embodiment of a manufacturing device for producing a mischief section and / or a mischief additional portion of an EUV collector according to one of the above representations;
• 49C a view from the direction ILc in 49B ;
• 50 in an example for 20 similar oversight illustration another Performing diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures are arranged in a square base grid;
• 51 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures are arranged in a hexagonal basic lattice;
• 52 in an example for 20 FIG. 11 is a plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for a stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures and intermediate diffraction negative structures are like a Chess boards are arranged;
• 53 in an example for 20 5 shows a similar embodiment of a further embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition section of another embodiment of the EUV collector, wherein the diffraction positive structures and the intermediate diffraction negative structures according to Art a polygenic structure (tiling) are arranged, wherein the structures may also be arranged in the manner of a binary, ternary or even quaternary grating;
• 54 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures and the intermediate diffraction negative structures are again after Type of polygenic structure (tiling) are arranged, wherein the structures may also be arranged in the manner of a binary, ternary or even quaternary grating;
• 55 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures and the intermediate diffraction negative structures are again after Type of quasi-periodic polygenic structure (tiling) are arranged, wherein the structures may also be arranged in the manner of a binary, ternary or even quaternary grid;
• 56 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures and the intermediate diffraction negative structures are again after Type of quasi-periodic polygenic structure (tiling) are arranged, wherein the structures may also be arranged in the manner of a binary, ternary or even quaternary grid;
• 57 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of another embodiment of the EUV collector, wherein the diffraction positive structures and the intermediate diffraction negative structures are again after Arranged in the manner of a random pattern, wherein an area of all the diffraction positive structures is as large as an area of all the diffraction negative structures, that is, a balanced area ratio is present in a unit cell;
• 58 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffractive positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion of a further embodiment of the EUV collector, wherein the diffraction positive structures are in a square Base grids are arranged, wherein binary structures of the diffraction grating are designed as concentric rectangles;
• 59 in an example for 20 5 shows a similar plan view of a further embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition section or an entire collector surface of another embodiment of the EUV collector, where diffraction grating binary structures are in the form of concentric triangles are;
• 60 in an example for 20 5 shows a similar plan view of a further embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for a false light in a region of a false light addition section or an entire collector surface of a further embodiment of the EUV collector, wherein diffraction grating binary structures are in the form of concentric ellipses are;
• 61 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion or a whole collector surface of another embodiment of the EUV collector, wherein diffraction grating binary structures are hyperbola lines are executed;
• 62 in an example for 20 5 shows a similar plan view of a further embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a false light addition section or an entire collector surface of a further embodiment of the EUV collector, wherein binary structures of the diffraction grating are designed as semicircles ;
• 63 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a stray light addition portion or an entire collector surface of another embodiment of the EUV collector, wherein diffraction grating binary structures are made as half-parabolas ;
• 64 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a false light addition portion of a further embodiment of the EUV collector, with diffraction grating binary structures as straight lines are executed;
• 65 in an example for 20 5 shows a similar plan view of a further embodiment of diffractive positive structures and diffraction negative structures of a diffraction grating for the single light in a region of a false light addition section or an entire collector surface of a further embodiment of the EUV collector, wherein diffraction grating binary structures are in the form of crossed parabolas are;
• 66 in an example for 20 Figure 11 is a similar plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a region of a false light addition portion of a further embodiment of the EUV collector, wherein diffraction grating binary structures are as from an origin starting out radially outwardly auffächernde plurality of spoke-like parabolas are executed;
• 67 and 68 in an example for 20 Fig. 11 is a plan view showing another embodiment of diffraction positive structures and diffraction negative structures of a diffraction grating for the stray light in a portion of a stray light addition portion of another embodiment of the EUV collector, wherein diffraction grating binary structures are made as a random pattern;
• 69 in one too 62 a similar representation of an embodiment of a binary grid of quadrant wise attached to each other arc sections.

A projection exposure machine 1 for microlithography has a light source 2 for illumination light or imaging light 3 , which will be explained further below. At the light source 2 it is an EUV light source that generates light in a wavelength range, for example between 5 nm and 30 nm, in particular between 5 nm and 15 nm. The illumination or imaging light 3 is also referred to below as EUV Nutzlicht.

At the light source 2 it may in particular be a light source with a wavelength of 13.5 nm or a light source with a wavelength of 6.9 nm. Other EUV wavelengths are possible. A beam path of the illumination light 3 is in the 1 shown very schematically.

For guiding the illumination light 3 from the light source 2 towards an object field 4 in an object plane 5 serves a lighting optics 6 , The latter includes one in the 1 strongly schematically illustrated field facet mirror FF and a in Beam path of the illumination light 3 following, also highly schematic pupil facet mirror PF shown. Between the pupil facet mirror PF, which is in a pupil plane 6a the illumination optics is arranged, and the object field 4 is a field-shaping mirror 6b for grazing incidence (GI mirror, grazing incidence mirror) in the beam path of the illumination light 3 arranged. Such a GI mirror 6b is not mandatory.

Pupil facets of the pupil facet mirror PF, which are not shown in greater detail, are part of a transmission optics, the field facets of the field facet mirror FF, likewise not shown, overlap one another in the object field 4 transfer and in particular map. For the field facet mirror FF on the one hand and the pupil facet mirror PF on the other hand, an embodiment known from the prior art can be used. Such illumination optics is known, for example from the DE 10 2009 045 096 A1 ,

With a projection optics or imaging optics 7 becomes the object field 4 in a picture field 8th in an image plane 9 mapped with a given reduction scale. For this purpose usable projection optics are known for example from the DE 10 2012 202 675 A1 ,

To facilitate the description of the projection exposure apparatus 1 as well as the different versions of the projection optics 7 in the drawing, a Cartesian xyz coordinate system is given, from which the respective positional relationship of the components shown in the figures results. In the 1 the x-direction is perpendicular to the plane of the drawing. The y-direction runs in the 1 to the left and the z direction in the 1 up. The object plane 5 runs parallel to the xy plane.

The object field 4 and the picture box 8th are rectangular. Alternatively, it is also possible to use the object field 4 and picture box 8th curved or curved, so in particular perform part-ring. The object field 4 and the picture box 8th have an xy aspect ratio greater than 1. The object field 4 thus has a longer object field dimension in the x direction and a shorter object field dimension in the y direction. These object field dimensions run along the field coordinates x and y.

For the projection optics 7 can be used one of the known from the prior art embodiments. Here, one is shown with the object field 4 coincident section of a reflection mask 10 , which is also called reticle. The reticle 10 is from a reticle holder 10a carried. The reticle holder 10a is powered by a reticle displacement drive 10b relocated.

The picture through the projection optics 7 takes place on the surface of a substrate 11 in the form of a wafer made by a substrate holder 12 will be carried. The substrate holder 12 is from a wafer or substrate displacement drive 12a relocated.

In the 1 is schematically between the reticle 10 and the projection optics 7 an incoming into this bundle of rays 13 of the illumination light 3 and between the projection optics 7 and the substrate 11 one from the projection optics 7 leaking radiation beam 14 of the illumination light 3 shown. An image field-side numerical aperture (NA) of the projection optics 7 is in the 1 not reproduced to scale.

The projection exposure machine 1 is the scanner type. Both the reticle 10 as well as the substrate 11 be during operation of the projection exposure system 1 scanned in the y direction. Also a stepper type of the projection exposure system 1 in which between individual exposures of the substrate 11 a gradual shift of the reticle 10 and the substrate 11 in the y-direction is possible. These displacements are synchronized with each other by appropriate control of the displacement drives 10b and 12a ,

2 shows details of the light source 2 ,

At the light source 2 it is a source of LPP (laser produced plasma). For plasma generation, tin droplets 15 from a tin droplet generator 16 generated as a continuous droplet sequence. A trajectory of tin droplets 15 runs transversely to a main radiation direction 17 of the EUV utility light 3 , The tin droplets 15 fly freely between the tin droplet generator 16 and a tin catcher 18 , where they have a plasma source area 19 pass. From the plasma source area 19 becomes the EUV useful light 3 emitted. In the plasma source area 19 becomes the incoming tin droplet there 15 with pump light 20 a pumping light source 21 applied. At the pump light source 21 it may be an infra red laser source in the form of, for example, a CO ₂ laser. Another IR laser source is possible, in particular a solid-state laser, for example a Nd: YAG laser.

The pump light 20 will be over a mirror 22 , which may be a controlled tiltable mirror, and a focusing lens 23 in the plasma source area 19 transferred. Due to the pump light exposure is from the plasma source area 19 incoming tin droplets 15 a the EUV Nutzlicht 3 generates emitting plasma. A beam path of the EUV utility light 3 is in the 2 between the plasma source area 19 and the field facet mirror FF shown, as far as the EUV useful light from a collector mirror 24 subsequently also referred to as EUV collector 24 is designated. The EUV collector 24 has a central opening 25 for that via the focusing lens 23 towards the plasma source area 19 focused pump light 20 , The collector 24 is designed as an ellipsoid mirror and transfers this from the plasma source area 19 , which is located at an ellipsoid focal point, emitted EUV Nutzlicht 3 into an intermediate focus 26 of the EUV utility light 3 , in the other ellipsoidal focal point of the collector 24 is arranged.

The field facet mirror FF is in the beam path of the EUV utility light 3 after the intermediate focus 26 in the range of a far field of the EUV Nutzlichts 3 arranged.

The EUV collector 24 and other components of the light source 2 , which is the tin droplet generator 16 , the tin catcher 18 and the focusing lens 23 can act, are in a vacuum housing 27 arranged. In the area of the intermediate focus 26 has the vacuum housing 27 a passage opening 28 , In the area of an entrance of the pump light 20 in the vacuum housing 27 the latter has a pump light entry window 29 ,

3 shows a strong abstract a guide on the one hand by EUV Nutzlicht, so the illumination light 3 and on the other hand of false light 30 , in particular of longer-wave radiation, for example IR radiation, between the plasma source region 19 the light source 2 and an intermediate focus level 26a in which the intermediate focus 26 is arranged. At the same time the shows 3 a variant of a lateral guidance of the pump light 20 towards the plasma source area 19 , So a guide in which there is a passage opening in the manner of the passage opening 25 in the EUV collector 24 not needed. Both the useful light 3 as well as the wrong-way 30 go from the plasma source area 19 out. Both the useful light 3 as well as the wrong-way 30 encounter mischief sections or mischief additional sections 31 . 32 an entire loading area 33 of the EUV collector 24 , The false light sections / false light additional sections 31 . 32 each serve to dissipate the stray light radiation 30 , The loading area 33 can be exactly one misleading section 31 respectively. The loading area 33 can be exactly one wrong-side addition section 32 respectively.

The mischief section 31 can spread over the entire loading area 33 extend. In this case, there is no false light addition section. For certain variants of the EUV collector 24 there is at least a single misleading addition section 32 , so no misleading section 31 on the loading area 33 in front. It can be exactly in the wrong-side addition section 32 at the collector 24 to be available. Relatively, several false-light additional sections 32 to be available.

The mischief section 31 is for discharging the stray light radiation 30 executed by diffraction. For this purpose, the false light section 31 executed as a computer generated program (CGH), which is described below in connection with the 27 to 29 is explained.

27 shows a greatly enlarged photograph of a surface structure 34 in a square area of the false light section 31 , The surface structure 34 The computer-generated hologram is designed to be the false light 30 bends in precisely defined directions. A height profile h (x, y) of diffraction positive structures 35 and intermediate diffraction negative structures 36 of the computer-generated hologram is a function of the location coordinates x and y of the mischief section 31 is designed so that a resulting complex amplitude A (x, y) at each location on the mischief section 31 has an amount different from a mean amount | A (x, y) | _mean differs by less than 20%. This amount of complex amplitude can be at any location x, y on the mischief section 31 have a constant amount. The complex amplitude can then be a pure phase function. The magnitude of the complex amplitude is then equal to 1 at each location x, y.

Shown in the 27 a perspective distribution of contour lines, which can be understood as "ridges" of hilly CGH structures. Between the "mountains" and the intermediate "valleys" of these structures are usually no digital, sharp-edged transitions, but the structures have more or less steep flanks, resulting from the 27 does not emerge. The diffraction positive structures 35 On the one hand and the diffraction negative structures on the other hand, in particular, can continuously merge into one another.

A diffraction direction, in which the false light 30 that the misdirected section 31 is diffracted, can be described by two independent directional angles α and β. An intensity B of in a far field of the collector 24 diffracted mischief can then be written as function B (α, β). It then holds that, apart from scaling factors, this far-field intensity B (α, β) corresponds to the quadratic absolute value of the Fourier transform of the complex amplitude of the surface structure 34 is equal to.

The mischief section 31 is designed so that it contains less than 20% of incidental false light 30 absorbs, ie more than 80% of the incident mischief 30 bends and in particular in the desired diffraction directions α, β bends.

28 shows by way of example a diffraction direction distribution of a specific layout of the surface structures 34 the computer-generated hologram of the false-light section 31 of the collector 24 , Shown are diffracted light paths of the on the stray light section 31 impinging false light 30 ,

In the beam path between the loading surface 33 of the collector 24 and the intermediate focus level 26a a plurality of false light traps (beam dumps) 37 are arranged, to which of the stray light section 31 bent mischief 30 to be led. The beam dumps 37 provide a controlled discharge of the stray light radiation 30 for example by absorption.

Between the loading area 33 and the beam dumps 37 are in the light path of the impingement area 33 bent falas 30 other components 38 the projection exposure system 1 arranged. These can be components, the purge gas in the collector area 24 direct and / or serve particles or debris from the plasma source area 19 go out, from the passage through the intermediate focus 26 hold.

The diffraction directions of the different rays of the false light 30 are, depending on the respective place of application on the false light section 31 and depending on the respective angle of incidence of the associated stray light beam chosen so that the respective stray light beams 30 from the place on the mischief section 31 between the components 38 be directed through an associated beam dump 37. Again 28 can be taken, there is an assignment of the diffraction deflection angle α, β to the location x, y on the false light section 31 not trivial. Nearly adjacent locations x ₁ , y ₁ and x ₂ , y ₂ can generate very different diffraction deflection angles α ₁ , β ₁ and α ₂ , β ₂ .

The distribution of the diffraction directions using the CGH surface structure 34 of the wrong-way section 31 can be chosen so that admission areas 39 the beam dumps 37 with the stray light 30 be evenly lit. Local overheating of the beam dumps 37 can thus be avoided.

Through the use of CGH surface structures 34 can continue to act on the Pupillenfacetten PF the illumination optics 6 be symmetrized. 29 shows by way of example four pupil facets PF of the pupil facet mirror, arranged in the pupil plane 6a , Indicated within each of the pupil facets PF an area of illumination 40 each of the pupil facets PF with the useful light 3 after his guidance over the EUV collector with the mischief section 31 with the CGH surface structures 34 , The illumination area 40 is rotationally symmetric, namely circular. An undesirable asymmetrical or local illumination of the respective pupil facet PF is avoided. In addition, all pupil facets become PF illuminated in substantially the same way, since the ratio of the areas of the illumination area 40 on the one hand to the total area of the respective pupil facet PF on the other hand, is essentially the same across all pupil facets and deviates from an average of such an area ratio by less than 20% and in particular by less than 10%.

The wrong-way 30 is in particular to a plurality of separate Abführorten, in the example of 28 to several separate beam dumps 37, led.

As above in connection with the 3 already explained, in addition to each existing, at least one false-light section 31 at least one more misleading additional section 32 as part of the impact area 33 of the EUV collector 24 be provided. Also the mischief addition section 32 is for removing the false light radiation 30 executed.

Various examples of the design of the false light addition section 32 will be described below on the basis of 4 ff. explained.

4 shows a cross section through a portion of a variant for the mischief addition section 32 , This is a diffraction grating for the false light 30 with diffractive positive structures 41 and intermediate diffraction negative structures 42 executed. The diffraction grating after 4 is still designed as a blazed diffraction grating.

The diffraction negative structures 42 are in one for the EUV Nutzlicht 3 highly reflective multilayer coating 43 executed. The latter is by a plurality of bilges, z. B. designed as a periodic or quasi-periodic sequence of molybdenum and silicon layers. The individual layers of the multilayer coating 43 are on a substrate 44 of the EUV collector 24 applied and run parallel to a substrate surface. The diffraction negative structures 42 extend through several of the individual layers of the multilayer coating 43 therethrough. In other words, the diffraction positive structures 41 as multiple layers of multilayer coating 43 designed.

5 shows a variant of the executed as Blaze diffraction grating mischief additional section 32 , Here is between the substrate 44 and the multilayer coating 43 a interlayer 45 arranged, which may be a polishing layer. Upwards or outwards is the multilayer coating 43 with a cover layer 46 provided whose course in the multilayer coating 43 executed diffraction positive structures 41 and diffraction negative structures 42 follows.

Due to the design as Blaze grating is the sequence of diffractive positive structures 41 and the diffraction negative structures 42 designed as Sägezahnverlauf.

6 shows the magnitudes needed to establish a blaze condition, depending on the direction of an incident mischmetal beam 30 whose direction of diffraction can be determined.

θ_B ist dabei der Winkel der Blaze-Strukturen zu einer Hauptebene 47 des Blaze-Gitters, die parallel zu einer Oberfläche des Substrats 44 ist. θ_B ist gleichzeitig gleich dem Einfallswinkel α und dem Ausfallswinkel β.In the Littrow arrangement, where an angle of incidence α is equal to an angle of incidence β, the stray light 30 as retroreflected, the following applies: $$\text{sin}{\mathrm{\theta }}_{\text{B}}=\mathrm{\lambda }\text{/ 2d}$$

θ _B is the angle of the blaze structures to a principal plane 47 Blaze grid parallel to a surface of the substrate 44 is. θ _B is simultaneously equal to the angle of incidence α and the angle of reflection β.

λ is the wavelength of the false light 30 ,

d is the extension of a period of the blazed structures of the diffraction grating, ie the distance between, for example, two diffraction negative structures 42 ,

The blaze condition can also be set up in the case where there is a failure angle β of the mis-light 30 should differ from an angle of incidence α, so the blaze grating should not act in retroreflection. Also this case is in the 6 shown. The blaze angle θ _B remains the same and the lattice constant d is adjusted so that the blaze condition is fulfilled for the desired angle of reflection β, that is, constructive diffraction is realized in the lowest possible order of diffraction.

7 shows a further variant of the false light addition section 32 , in this case executed as a binary grid. 7 again shows an area of the false light addition section 32 on average. Components and functions corresponding to those described above with reference in particular to the embodiment according to FIGS 4 and 5 already described, bear the same reference numbers and will not be discussed again in detail.

The diffraction positive structures 41 are in the execution after 7 designed with a rectangular cross-section. Also the diffraction negative structures 42 have in the execution after 7 a rectangular cross-section. An extension of the diffraction positive structures 41 and the diffraction negative structures 42 parallel to the substrate surface is in the representation after 7 same size, but this is not mandatory. Also a depth T the diffraction negative structures 42 , measured perpendicular to the substrate surface, is not necessarily the same size as these dimensions.

The extents d41 and d42 of the diffraction positive structures and the diffraction negative structures as well as the depth T are chosen so that for a given wavelength of the simplex 30 and a predetermined angle of incidence in the respective area of the false light addition section 32 a desired diffraction angle and a desired diffraction efficiency result.

flanks 41a / 41a ' the diffraction positive structures 41 can extend vertically, as drawn in the 7 shown, or may be inclined, as shown in dashed lines in the 7 indicated. The inclined course of the flanks 41a ' can cause the diffractive positive structures 41 with increasing height have an increasingly larger areal extent, as in the 7 on the left, or may be such that the areal extent decreases as the height of the diffractive positive structures increases, as in FIG 7 in the middle diffraction positive structure 41 shown.

Also in the execution after 7 may be an intermediate layer of the type of intermediate layer 45 according to the execution 5 and it can be a topcoat 46 according to the type of execution 5 be provided.

In the execution of the 4 . 5 and 7 is the diffraction grating of the false light addition section 32 on a flat area of the substrate 44 applied. This is not mandatory, as described below with reference to the further embodiments according to the 8th to 10 is explained.

8th shows a variant of the false light addition section 32 , in the substrate 44 substrate wells 48 or substrate modulations are executed. Components and functions that stand in the context of the 4 . 5 and 7 already described, bear the same reference numbers and will not be discussed again in detail. The substrate with the substrate wells 48 is with the multilayer coating 43 coated so that the diffraction negative structures 42 each at the location of the substrate wells 48 above these are present. In the embodiment according to 8th results from a matching of the depth T _{48 of} the substrate recesses 48 relative to the thickness of the individual layers of the multilayer coating 43 a coating area 49 with over the surface of the false light addition section 3 continuous individual layers of the multilayer coating 43 ,

9 shows a variant of the design of the false light addition section 32 , Components and functions discussed above in connection with the 4 . 5 . 7 and 8th and in particular in connection with the 8th already described, bear the same reference numbers and will not be discussed again in detail.

In the false-light addition section 32 after 9 lies a coating area 50 between the substrate wells 48 and the upper diffraction structures 41 . 42 before, in which the materials of the individual layers of the multilayer coating 43 seen in the dimensions parallel to the substrate surface also alternate. In cross section 9 arises in the coating area 50 a kind of checkerboard pattern of single-ply materials alternating both in the depth dimension and in the dimensions parallel to the substrate surface.

10 shows a further embodiment for the false light addition section 32 , Components and functions discussed above in connection with the 4 . 5 . 7 . 8th and 9 and in particular in connection with 8th and 9 already described, bear the same reference numbers and will not be discussed again in detail.

The diffractive structure design of the false light addition section 32 after 10 can as an intermediate solution between the variant after 8th with the coating area 49 with continuous single layer materials and the coating area 50 be understood with exactly alternating single layer materials. At the false light addition section 32 after 10 lie at the place he substrate recesses 48 on the one hand and at the location of the intermediate substrate elevations 50 on the other hand stacks each 52 of alternating individual layers of the multilayer coating 43 between which there are no continuous single layer layer boundaries, so that the individual stacks 52 over vertical layer boundaries 53 separated from each other.

A depth T the diffraction negative structures 42 may be from a position of the respective diffractive negative structures 42 on the loading area 33 of the EUV collector 24 depend. This will be explained below with reference to 11 explained. There is a beam path of two exemplary false light rays 30a . 30b shown starting from the plasma source area 19 over two false-light additional sections 32a . 32b to be directed to a beam dump 37.

At the place of the misdirected addition section 32a is used to deflect the associated stray light beam 30a towards the beam dump 37 only a small deflection angle is needed. Also the angle of incidence of the false light beam 30a on the mischief addition section 32a is small. Accordingly, the diffraction negative structures are 42 of the mischief addition section 32a with a comparatively small depth T executed.

At the place further in the 11 illustrated false light addition section 32b is a significantly larger angle of incidence of the false light beam 30b on the diffraction structures, as well as in the insert of 11 is clarified. The depth is corresponding T the diffraction negative structures 42 at the false-light addition section 32b comparatively large and larger than in the diffraction negative structures 42 of the mischief addition section 32a ,

12 shows in one of the 7 to 10 similar, but in comparison, but again enlarged view of a variant of an embodiment of the multilayer coating 43 at the place of a flank 54 the diffraction structure between a diffractive positive structure 41 and a diffraction groove 42 , In the execution after 12 is also in the area of the flank 54 a multi-layer coating with flank single layers 54a in front, pointing towards the flank 54 , ie perpendicular to the main surface of the substrate 44 , extend. The flank single layers 54a connect individual layers of the diffraction positive structures 41 and the diffraction negative structures 42 each with each other.

Also in the execution after 12 can the flanks 54 not perpendicular, as in the 12 but inclined so that diffractive positive structures 41 result, whose areal extent either increases or decreases with increasing altitude, as described above in connection with the 7 already explained.

Also in the diffraction grating designs according to the 8th to 12 For example, intermediate layers and / or cover layers can be used as described above in connection with US Pat 5 explained.

13 shows a further variant of an embodiment of the false additional section 32 with a blazed diffraction structure with diffractive positive structures 41 and diffraction negative structures 42 , Components and functions that are those in accordance with the above with reference to the 1 to 12 and in particular with reference to 4 to 6 already described, bear the same reference numbers and will not be discussed again in detail.

In the blazed diffraction grating design 13 follow layer planes 55 the multilayer coating 43 a blaze angle θ _{B of} the blazed diffraction grating.

14 shows a further embodiment of the false light addition section 32 again in a plan view, with only a section of the false light addition section 32 is shown. A false light diffraction grating is in the execution after 14 designed by partially discretely oriented and linearly extending diffractive positive structures, respectively in rectangular sections meandering or in the manner of a rectangular spiral around a section center AZ run around. Between adjacent diffraction positive structures 56 runs a diffraction depression 57 also meandering.

A height profile of the diffraction positive structures may have vertical flanks, but may alternatively also have inclined flanks or curved flanks, which will also be explained below in connection with further embodiments of the diffraction structures.

15 shows a larger portion of the false light addition section 32 with a total of 12 rectangular meander sections, of which in the 14 two are shown. The diffraction positive structures 56 and the diffraction negative structures 57 are discreetly oriented so that they linearly change their direction by exactly 90 ° so that both the diffraction positive structures 56 as well as the diffraction negative structures 57 are limited by edge portions, which in the 14 either horizontally or vertically. Due to the linear course of the diffraction positive structures 56 and the diffraction negative structures 57 they completely hang together within a meander rectangle.

The discrete orientation of the diffraction positive structures 56 and the diffraction negative structures 57 at the diffraction grating of the execution according to the 14 and 15 results in the false light being diffracted into a total of four discrete orientations. 16 shows an example of an arrangement of beam dumps 37 to an intermediate focus 26 , which together with a folding light addition section 32 after the 14 and 15 can be used. According to the four discrete diffraction directions of the respective rectangular meander portions of the diffraction gratings are in the arrangement according to 16 four beam dumps 37 around the intermediate focus 26 arranged around. The wrong-way 30 is done with the help of the at least one false light addition section 32 after the 14 and 15 on the four beam dumps 37 after 16 distributed. The EUV Nutzlicht remains unaffected and is in the intermediate focus 26 bundled.

17 shows a further embodiment for a section of a false-light addition section 32 , which can be used as an alternative to one of the two cutouts used in the 14 are shown. The false light diffraction grating of the embodiment 17 is again with discretely oriented diffractive positive structures 56 and intermediate diffraction negative structures 57 designed. These diffraction structures run in the manner of a labyrinth pattern. Due to the discrete orientation results in a diffraction behavior, in which stray light in particular also four discretely arranged beam dumps 37 can be removed by diffraction, as described above in connection with 17 described.

18 shows a further alternative section of a false light addition section 32 , which can be used instead of corresponding cutouts, the above with reference to the 14 and 17 have been described. The false light diffraction structure after 18 again includes diffraction positive structures 56 with intermediate diffraction negative structures 57 , which are designed in this case in the manner of a Hilbert curve (see the textbook of Michael Bader's "Space-Filling Curves - An Introduction to Applications in Scientific Computing," Volume 9 of Text in Computational Science and Engineering, Springer-Verlag, 2013 ).

Also in the execution after 18 There is a discrete orientation of the diffraction structures, which leads to four discrete orders of diffraction.

19 shows a further design of diffraction structures of a false light addition section 32 , which can be used instead of the variants described above. Positive diffraction structures 56 and intermediate diffraction negative structures 57 are in the execution after 19 designed in the manner of a Gosper curve (see Eric W. Weisstein's "Piano-Gosper Curve" from Mathworld - A Wolfram Web Resource http://mathworld.wolfram.com/piano-gospercurve.html).

A design of the diffraction structure according to 19 again has a discretely oriented course and leads to a diffraction in six discrete spatial directions, so that in addition to the arrangement according to 16 six beam dumps 37 with diffracted folding light 30 can be applied.

Other space-filling curves can be used to design the diffraction structures. Such space-filling curves can the entire application area 33 fill or only areas thereof, which can then be attached to each other.

20 shows a further embodiment of a section of a mischief addition section 32 , which can be used in place of the embodiments described above. The False-light addition section 32 fills in during execution 20 the entire collector 24 , The false light diffraction structures of the false light addition section 32 after 20 So cover the entire admission area 33 of the collector 24 , The false light diffraction structures are designed as diffractive positive structures 56 in the form of one of a center Z outgoing spiral, wherein diffraction negative structures between adjacent spiral paths of the diffraction positive structures as well as a spiral circumferential groove 57 are designed. The diffraction structures of the execution according to the 18 to 20 are linear.

A height profile of the diffraction positive structures may have vertical flanks, but may alternatively also have inclined flanks or curved flanks, which will also be explained below in connection with further embodiments of the diffraction structures.

An outermost spiral turn of the diffractive positive structure 56 after 20 runs into a border area 58 of the collector 24 out.

The false light diffraction grating after 20 creates one in relation to the center Z of the collector 24 radial diffraction deflection of the false light 30 ,

21 shows a modification of a false light addition section 32 , which instead of running after 20 can be used.

Positive diffraction structures 56 of the false light diffraction grating are in the execution after 21 as three nested spirals 56 ₁ , 56 ₂ and 56 ₃ executed, between which the diffraction negative structures as three intermediate grooves 57 ₁ , 57 ₂ and 57 ₃ run.

The number of nested single spirals can be between two and ten, depending on the design. Also in the execution after 21 fills the illustrated, nested spiral diffraction structure the entire loading surface 33 of the EUV collector 24 ,

22 shows a further embodiment of a false light addition section 32 In particular, instead of the embodiments according to the 20 and 21 can be used.

In the execution after 22 is a plurality of spiral structures as a false light diffraction grating on the type of spiral structures 59 of the 20 in front. The spiral structures 59 cover each other in areas, so that each one of the spiral structures 59 only exists where it is not from another spiral structure 59 is covered.

The one with these different spiral designs of the false-light additional sections 32 after the 20 to 22 different possible diffraction behavior is described below with reference to 23 and 24 explained.

This 23 and 24 show the false light diffraction in one of the already explained above 3 similar sectional view.

23 shows the diffraction behavior in the event that a false-light addition section 32 on the entire loading area 33 of the EUV collector 24 in the manner of a spiral diffraction structure for the false light 30 after 20 is executed. The diffraction structure is also designed as Blazegitter, so that the false light 30 in exactly one diffraction direction is deflected. This can be done so that, for example, an annular beam dump 37, which in the 23 and 24 is shown in section, one in the 23 left-hand section of the wrong-side additional section 32 on one in the 23 left portion of the ring structure of the beam dump 37 is bent away. Accordingly, the false light 30 from one in the 23 right-hand section of the wrong-side additional section 32 towards a right part of the ring portion of the beam dump 37 bent away. As far as the total loading area 33 of the collector 24 in the 23 between the local left and the right there right section unevenly lit, in particular with different intensity density, results in a correspondingly inhomogeneous Beaufschlagungsbelastung the various partial ring sections of the beam dump 37th

In the execution after 24 lie on the impact area 33 of the EUV collector 24 different spiral structures 59 ₁ , 59 ₂ on the type of spiral structures 59 after 22 in front. Each of these spiral structures 59i can then be designed so that on this particular spiral structure 59i impinging false light 30 towards the entire surface of the beam dump 37 is bent away. The thermal load on the entire beam dump 37 then results as the sum of the thermal loads, starting from the different spiral areas 59i , which leads to a homogenization of the thermal load of the entire beam dump 37.

A corresponding effect is also obtained when the spiral structures of the false light addition section 32 are not designed as Blazegitter, as described below with reference to 25 and 26 is explained. A spiral structure designed in this way directs the stray light 30 by the same amount in two opposite directions, for example +/- 1. Diffraction order. An Indian 25 left area of the EUV collector 24 For example, deflects the stray light on a left portion 37 ₁ and a right portion 37 _{r of} the beam dump 37, as in the 25 is clarified. An Indian 25 Upper area of the false light addition section 32 directs the stray light 30 on the one hand in an upper part ring section 37 _o and on the other hand in a in the 25 lower partial ring section 37 _{u of} the beam dump 37. Locally on the entire loading area 33 False-light intensity peaks occurring lead to corresponding peak loads on associated partial ring sections 37 _{i of} the beam dump 37.

As far as the execution after 22 several spiral structures 59i the mischief addition section 32 can form, the admission of the different partial ring sections 37i the beam dump 37 each over one of these spiral structures 59i take place, so that in turn the total stray light intensity load of the beam dump 37 by superposition of the application of the different spiral structures 59i resulting in an averaging of the intensity loads on the entire loading area 33 leads.

The 27 to 29 were above related to the mischief section 31 already explained.

30 shows a further embodiment for the false light addition section 32 , Also in this variant covers the false light addition section 32 the entire loading area 33 of the EUV collector 24 , As in the other embodiments described here may alternatively only a part of the application area 33 be provided with a correspondingly designed mischief addition section.

In the execution after 30 There is a radial structure of the false light diffraction grating. This has sector-shaped diffraction positive structures 56 between each of which also sector-shaped diffraction negative structures 57 are arranged, so that an alternating sectoral sequence of diffractive positive structures 56 and diffraction negative structures 57 in the circumferential direction around a center Z of the mischief addition section 32 results. Alternatively, a corresponding radial structure can also be designed so that all of the illustrated sectors in the 30 Represent diffraction positive structures and boundary areas 60 between such segments are designed as recessed grooves and thus as diffraction negative structures. The diffractive positive structures on the one hand and the diffraction negative structures on the other hand, as already explained above in connection with other variants of the diffraction structures, may have a structure flank profile whose flanks extend vertically or alternatively extend inclined or also curved. A circumferential extent of the diffractive positive structures and / or the diffractive negative structures may increase with increasing radius around the center Z increase.

31 shows a further embodiment of a false light addition section 32 , again with a radial structure as a false light diffraction grating. In contrast to the groove design after 30 are in the execution after 31 the groove-like diffraction negative structures 57 designed with different radial extent. Only four of these radial grooves 57 are in the execution after 31 as from the center Z to the outer edge area 58 running, continuous spokes designed. Also a larger number according to the outer edge area 58 continuous spokes is possible. The other grooves 57 pointing, from the edge area 58 each starting, different radial extensions to the center Z on, leaving a minimum distance between each adjacent grooves 57 , except for the two continuous grooves 57 , does not fall below a predetermined limit. Thus have the diffraction positive structures 56 between the adjacent grooves a corresponding, predetermined minimum extent in the circumferential direction and thus a corresponding diffraction effect within a predetermined tolerance range. Due to the radial stray light diffraction grating after the 30 and 31 This results in a relation to the center Z of the collector 24 tangential directional deflection due to the diffraction effect of the grating.

32 shows a further embodiment for the false light addition section 32 , Unlike the execution after 22 interpenetrate during execution 32 the different spiral structures 59 ,

Based on 33 to 47 In the following, variants of production devices and production methods for EUV collectors with at least one false-light section are described 31 and / or with at least one false-light addition section 32 according to one of the above or below described embodiments explained.

33 shows an embodiment of the manufacturing apparatus 61 with a stylus 62 to supplement the diffraction structures of the simplex section 31 and / or the false-light addition section 32 of the collector 24 , Components and functions corresponding to those described above with reference to FIGS 1 to 32 already described, bear the same reference numbers and will not be discussed again in detail. The writing head 62 is with a free end of a robotic arm 63 connected. The Rotoberarm 63 is via a control device 64 for write positioning of the write head 62 controlled and in particular by means of at least one actuator of the control device 64 moved in at least one degree of freedom of translation or rotation. The control device 64 can the robot arm 63 move with two, three, four or five degrees of freedom.

In the production of the diffraction structure of the stray light section 31 and / or the false-light addition section 32 the write head moves along a trajectory over the corresponding area of the loading surface 33 of the collector 24 moves and generates, for example, mechanically or optically the respective diffraction structure. So it finds a relative movement between the collector 24 as a substrate and the stylus 62 as a structuring unit. When editing the substrate with the write head 62 may be a mechanical, thermal, chemical or electromagnetic removal of substrate material.

As far as the writing process by means of the write head 62 optically, the area to be machined of the loading surface can 33 be provided with a photosensitive coating. By subsequent exposure with the help of the write head 62 Then, a change in the properties of this photosensitive coating can be achieved. The exposure through the stylus 62 can, as in the 34 illustrated, done directly by means of a light source. 34 also shows a coating of the substrate 44 with a photoresist 65 ,

A regular multi-layer coating on the substrate 44 is in the 34 ff. omitted.

A distance between the light source of the write head 62 and the one with the photoresist 65 coated substrate 44 can be very small to ensure a corresponding spatial resolution in the structure production.

35 shows an alterative variant in which the write head 62 a fiber optically connected to the light source, not shown 66 with one in turn with the photoresist 65 coated substrate 44 facing out coupling unit 67 includes.

36 shows a further variant of the write head, in which this next to a writing light source 68 a schematically represented by a single lens imaging optics 69 for imaging the imaging optics onto the layer of the photoresist 65 to ensure. Instead of a single lens, the imaging optics 69 also be formed by a system of lenses. A numerical aperture of the imaging optics 69 is so big that a light spot 70 of the writing light on the photoresist layer 65 is sufficiently small to ensure a structure resolution sufficient for generating the diffraction grating.

37 shows in a plan view and cross-sectional representation variants for a cross section of the light spot 70 , In the execution after 37 on the left is the light spot 70 with a circular cross-section and in the execution after 37 right is the light spot 70 designed with elliptical cross-section. In the 37 is also a directional arrow 71 for a preferred direction of the diffractive positive structures 56 and / or the diffractive negative structures 57 of the false light diffraction grating to be produced 31 or the false-light additional section to be produced 32 located. The orientation of the elliptical cross section of the in 37 right variant of the light spot 70 may be such that a long half-axis of the ellipse in the direction of the directional arrow 71 runs. This optimizes a texture resolution in the use of such a light spot 70 with elliptical cross-section in the production of the false light diffraction grating. In the 37 is also a normal N on the surface of the substrate 44 drawn perpendicular to the plane of the drawing 37 stands.

38 shows in a transverse section, that is seen for example from the direction XXXVIII in the 37 two variants of transversal intensity profiles for the light spot 70 , for example, for the light spot after 37 left with the circular cross section. In the variant after 38 on the left is a mixed form of the transverse intensity profile between a Gaussian profile and a Tophat profile. Due to the comparatively steep flanks of this transversal intensity profile, a good structural definition for the defined development of the photoresist can be achieved 65 and thus ensure a correspondingly high structural resolution. 38 right shows a variant of the transverse intensity profile, which has a significant Lorenz contribution, so that a peak intensity range only very small is extended and thus with the use of appropriate, responsive only to the intensity peak photoresists a very fine structure resolution can be achieved.

After development of the photoresist 65 that with the write head with a light source according to one of the above related to the 34 to 38 has been exposed, the false light diffraction pattern can be etched into the substrate 44 be transmitted. The exposed part (using a positive resist) or the unexposed part (using a negative resist) may be removed before starting the actual etching process.

An anisotropic etching process may be used, which is primarily in the direction of the surface normal N etched. Examples of such an anisotropic etching process, which is also referred to as a physical etching process, are ion etching, reactive ion etching and ion beam etching.

Alternatively, an isotropic etching process can be used. Isotropic etching processes are also referred to as chemical etching processes. A method used here is, for example, wet-chemical etching.

Alternatively or additionally, the loading surface 33 at the place of the cross section to be produced 31 or the false-light addition section 32 be processed by sufficiently strong light. Thus, it is possible to generate the false light diffraction structures, for example by laser cutting or laser marking. Removed material by means of such a laser writing process can, with the aid of a gas jet, on a processing area of the loading surface 33 of the collector 24 is directed to be removed.

The writing laser may be a femtosecond laser.

As an alternative to photons, it is also possible to use electrons or ions for the writing processing of the false light diffraction structures. Thus, established methods of electron beam machining can be used.

39 indicates in connection with the use of the various writing beam cross sections 37 various variants of write processing paths or write processing paths. 39 left shows a writing beam with round light spot 70 , the along a right-angled bent writing path 72 over the admission area 33 of the collector 24 to be led.

39 Center shows a corresponding, right-angled bent writing path 72 when using the elliptical variant of the light spot 70 which, as discussed above in connection with the 37 already explained, always oriented so that the long half-axis in the direction of the writing path 72 stands.

39 right shows a not right-angled bend, but over a rounded curve 73 a corresponding direction change making Schreibbahn 72 , also using an elliptical light spot 70 in which the light spot 70 along the entire railway 72 including the curve 73 always parallel to the current direction of the writing path 72 So in the area of the curve 73 tangent to this writing path 72 , is oriented.

The writing path 72 can be simply or repeatedly traversed during structure processing. The writing path can be traversed each time in the same direction or in opposite directions.

A radius of the curve 73 may be at least one cross-sectional dimension of the light spot 70 be adjusted.

40 shows a further embodiment of the manufacturing device 61 for producing at least one false-light section 31 and / or at least one false-light addition section 32 of the EUV collector 24 , Components and functions corresponding to those described above with reference to FIGS 33 already described, bear the same reference numbers and will not be discussed again in detail.

The manufacturing device 61 after 40 has a rotary drive shown schematically there, with which the collector 24 around a plane perpendicular to the plane of the 40 extending axis of rotation 75 can be turned. The control device 64 is in the execution after 40 designed so that the robot arm 63 in its length between the control device 64 and the stylus 62 can be changed. The corresponding translational movement of the write head 62 (see double arrow 76 in the 40 ) is compared to the rotary drive 74 generated rotary motion of the collector 24 slowly. With the control device 64 So there is a shift of the robot arm 63 along a translational degree of freedom.

As far as a write path, the write head 62 for generating the diffraction structure of the stray light section 31 or the false-light addition section 32 leaves, is to be traversed several times, can be an azimuth angle of the surface to be structured Beaufschlagungsfläche 33 of the collector 24 with the help of a measuring unit 77 the control device 64 be measured. For this purpose, an optical structure, for example an encoder, on the collector 24 , for example, on its edge area 58 to be applied. Such a measuring structure can permanently on the collector 24 remain or be removed after its processing.

41 shows an example of a collector 24 with a spiral-shaped mischief addition section 32 on the loading area 33 , which is designed according to the above in connection with the 20 was explained.

In an outer peripheral area 78 around the loading area 33 that extends in the radial direction to the edge area 58 As an example of the above-mentioned optical structures for measuring the azimuth angle, auxiliary marks are provided 79 attached, each having a range of an azimuth angle about the center Z of the false light addition section to be structured 32 cover. In the production of the false light addition section 32 with the help of the manufacturing device 61 after 40 when repeated editing along a write path based on the auxiliary marks 79 visually ensured that the respective write path, for example, the spiral groove 59 without undesired azimuth offset.

The auxiliary markings 79 differ in their azimuth extent. In particular, an excellent auxiliary marker 79 ₀ has one in comparison to the other auxiliary markers 79 larger azimuth extension.

42 shows a variant of an auxiliary marker 79 that instead of those after 41 for determining an azimuth position of a false-light addition section to be produced 32 can be used. Components and functions described above with reference to 41 already described, bear the same reference numbers and will not be discussed again in detail.

In the execution after 42 is the auxiliary marker 49 executed as a mechanical stop, in a defined azimuth position of the collector 24 in its edge area 58 is arranged. With the stop 79 becomes a beginning of the writing path to be traveled, that is, for example, the spiral groove 60 , defined, which can then be traversed reproducibly if necessary several times.

The writing head 62 can be carried out with a mechanical cutting tool for structure production, for example with a diamond cutting head. Such a cutting tool may have a cutting edge with a preferred direction. When using a manufacturing device 61 after 40 this orientation of the tool can be maintained.

Based on 43A and 43B Below is a further embodiment of a manufacturing device 61 for structure generation of the simplex section 31 and / or the false-light addition section 32 explained. Components and functions corresponding to those described above with reference in particular to 33 to 42 already described, bear the same reference numbers and will not be discussed again in detail.

Instead of a linearly displaceable on a robot arm write head as in the embodiment of 40 has the manufacturing device 61 after 43A a static guide rail 80 , which is a form of the impact area 33 of the collector 24 follows, as the perspective side view 43B can be removed.

At the guide rail 80 is a powered sled 81 led, in turn, the stylus 62 wearing. As in the execution after 40 has the manufacturing device 61 after the 43A and 43B a rotary drive 74 about which the collector 24 around the axis of rotation 75 can be turned. In the supervision after 43A runs the guide rail 80 radially with respect to this axis of rotation 75 , The center Z the loading area 33 can on the rotation axis 75 lie.

The robot arm 63 may be one of the curved shape of the loading surface 33 of the collector 24 have the following form.

As far as the write head 62 By means of radiation acts as Strukturiermedium, a radiation source with which such a write head 62 working together, switching between an active structuring mode and an inactive mode. This can be done by turning on / off the radiation source and / or for example by using a switch. In this way, a movement of the write head 62 relative to the loading surface 33 partially or completely of a shape of the diffractive structure of the mischief section to be written 31 and / or the false-light addition section 32 be decoupled.

A dimming of the radiation source for the predetermined weakening of the structuring effect is also possible.

If one and the same write path is traversed multiple times during structuring, the radiation source in the repetition of the write path to be passed through can be switched in a different mode than in the previous run through of the write path. The radiation source can, for example, during the first passage through a Section of the write path is active and inactive when repeatedly traversing the same write path.

Instead of a single stylus 62 can also a plurality of juxtaposed write heads on the type of the write head 62 in particular be arranged side by side. As far as such a write head group together with a rotary drivable collector 24 (Rotary drive 74 , see. the explanations after the 40 and 43A) can be used when turning the collector 24 individual write heads of such a write head group depending on the current azimuth of the collector 24 and toggling between an active patterning mode and an inactive mode depending on the diffractive structure to be written.

Alternatively to a rotation of the collector 24 can the rotary actuator 74 also be designed so that it accordingly a rotation of the write head 62 around the axis of rotation 75 performs.

Based on 43C Below is a further embodiment of a manufacturing device 61 for structure generation of the simplex section 31 and / or the false-light addition section 32 explained. Components and functions corresponding to those described above with reference in particular to 33 to 42 . 43A . 43B already described, bear the same reference numbers and will not be discussed again in detail.

The writing light source 68 produced at the manufacturing device 61 a writing light beam 68a that has a scan mirror 68b is guided, which can be tilted via a mechanism, not shown, in two degrees of freedom. The scanning mirror 68b conducts the writing light beam 68a on the mischief section 31 or the false-light addition section 32 on the EUV collector 24 , That way the section can 31 respectively. 32 be scanned. A control of the mirror mechanism can be done by piezo motors or hydraulic motors. The writing light beam 68a can by means of an optical system schematically represented by a block 68c on the section 31 respectively. 32 be focused. A scanning of the section 31 respectively. 32 can be line by line, spiral or can also be along an individual path.

Based on 44 Below is a further embodiment of a manufacturing device 61 for the structure production of the simplex section 31 and / or the false-light addition section 32 explained. Components and functions corresponding to those described above with reference in particular to 33 to 42 . 43A . 43B and 43C have already been described, bear the same reference numbers and will not be discussed further in detail.

The manufacturing device 61 after 44 can as a modification of the manufacturing device 61 after the 43A and 43B be understood. A writing head 62 runs here on a guide rail 80 , The guide rail 80 can be flexible. The writing head 62 moves on the guide rail using a guide carriage 80 along a first direction x to produce a diffraction structuring of the collector 24 on the section 31 respectively. 32 , The writing head 62 can achieve a material removal optically, mechanically, chemically or thermally or expose a lacquer. The writing head 62 can have a working principle, as is known for example in dot matrix printers. The guide rail 80 can be as well as in connection with the 43B described to be curved to a correspondingly curved section 31 respectively. 32 adapt. Using a displacement drive 68d may be a displacement of the guide rail 80 in a second dimension y can be achieved. The guide rail 80 is at both ends in linear guides of the displacement drive 68d stored. The second dimension y is perpendicular to the longitudinal extent of the guide rail 80 , The first dimension x runs along the extension of the guide rail 80 ,

Another height drive, the integrated part of the displacement drive 68d can be, ensures a shift of the write head 62 perpendicular to the xy plane, so for an adjustment of a height of the write head 62 over the section 31 respectively. 32 , The writing head 62 is displaceable in this way in three translational degrees of freedom. In the structure of the section 31 respectively. 32 can the write head 62 over the guide rail 80 line by line across the section 31 respectively. 32 be driven.

45 and 46 show a further embodiment of the manufacturing device 61 for generating diffraction structures for the stray light section 31 and / or the false-light addition section 32 , Components and functions corresponding to those described above with reference to FIGS 33 ff., have the same reference numbers and will not be discussed again in detail.

In the manufacturing device 61 after 45 and 46 is the desired diffraction structure simultanflächig on a in the 45 and 46 not shown photoresist on the loading surface 33 projected. A corresponding light pattern of writing light 82 can be made from a raw writing beam 83 with the aid of a pattern-generating object, for example a diffrative optical element (DOE) 84 be generated.

A distance r of the DOE 84 to the loading area 33 of the collector 24 may have a typical radius of curvature of the loading surface 33 in the area of the simplex section to be produced 31 or false light additional section 32 correspond. In this case, the writing light hits 82 Each place to be structured on the admission area 33 with about vertical incidence.

Alternative to a DOE 84 it is also possible to set a projection template as a diffraction-structure-producing component, which is based on the false-light section to be structured 31 or false-light additional section 32 is projected. Instead of the DOE 84 can also be a light modulator as a structure-generating object, which is for example a micromirror array or a liquid crystal display 85 acts (cf. 46 ).

Based on 47 Below is a further embodiment of the manufacturing device 61 describe. Components and functions corresponding to those described above with reference to the 33 ff., have the same reference numbers and are not discussed again in detail.

In the execution after 47 will be on the mischief section 31 or the false-light addition section 32 to be generated diffraction structure on a template 86 generated by close-up projection. The template 86 has a carrier 87 in the form of a glass meniscus and a textured layer 88 in the form of a coating with absorbent structures. The template 86 is the loading area 33 in particular in the region of the false light section to be produced 31 or the false-light addition section 32 , nearby. By irradiation of the photoresist 65 with light from an example isotropic light source 68 the structure is on the structured layer 68 on the mischief section 31 or the false-light addition section 32 transfer.

A distance of the light source 68 from the to be generated mischief section 31 or false-light additional section 32 corresponds to a typical radius of curvature there.

The 48 and 49 show snapshots of a further possible manufacturing method for producing diffraction structures of a stray light section 31 or a false-light addition section 32 with the help of a stamp 89 , Components and functions that correspond to those already explained above bear the same reference numbers and will not be discussed again in detail.

The manufacturing process according to the 48 and 49 can be designed in the manner of a nanoprint lithograph.

48 shows on the left a portion of the substrate 44 of the collector in the structured section to be structured 31 or false-light additional section 32 , Above the substrate is the stamp 89 arranged, whose stamp surface 90 a negative represents the diffraction structure to be introduced in the substrate.

48 middle shows the moment of stamping, in which the stamp surface 90 of the stamp 89 incorporated into a substrate surface.

48 right shows the substrate 44 with the diffraction structure produced by stamping 91 ,

49A shows the 48 corresponding stamp process steps with the difference that in the method according to 49A the diffraction structure 91 in a structuring layer 92 is introduced. The structuring layer 92 was applied to the substrate before stamping. The structuring layer 92 may be off compared to the substrate 44 consist of softer material. With applied stamp 89 (see. 49A middle), the structuring layer 92 Harden.

Based on 49B and 49C Below is another stamp design for the manufacturing device 61 described. Components and functions corresponding to those described above with reference to FIGS 33f , and in particular with reference to 48 and 49 already described, bear the same reference numbers and will not be discussed again in detail.

The structuring layer 92 of the substrate 44 is in the execution of the 49B / C designed as a varnish layer. The manufacturing device 61 after the 49B / C has a stamp 89 who has feedings 92a , which are shown schematically and of which in the 49B one and in the 49C two feeders are shown, cooled or heated. A stamp area 90 of the stamp 89 after the 49B / C has passages 92b on. In the area of a circumferential edge of the stamp 89 is with this a cylindrical heat sink 92c connected. As in the 49B / C indicated, the feeders 92a from the heat sink 92c carried. For generating a diffraction structure in the structuring layer 92 becomes the heated stamp 89 in the stamp area 90 the structures are given as negatives on the structuring layer 92 pressed and melts this structuring layer 92 on. Molten material of the structuring layer 92 is through the passages 92b in the 49B discharged upward. The peripheral cooling of the stamp 89 over the heat sink 92c prevents unwanted edge-side melting of the structuring layer 92 , The desired diffraction structures arise in false light sections 31 or in false-light additional sections 32 , the sector-shaped stamp sections 89a are assigned in the 49C are highlighted.

50 shows a further embodiment of the diffraction structure of the false light addition section 32 , Components and functions described above with reference to the 1 to 49 already described, bear the same reference numbers and will not be discussed again in detail.

Sections of the diffractive positive structures 56 and the diffraction negative structures 57 run in the execution after 50 in the form of a two-dimensional grid with in this case a square unit cell 93 , The diffraction positive structures 56 are in the execution after 50 square. In each of the unit cells 93 a diffractive positive structure is arranged in the form of a microstructured column with a square cross-section, as seen from the top 50 becomes clear. Accordingly, the diffraction positive structures 56 in the manner of a row / column grid in the false light addition section 32 arranged. A superstructure of this arrangement has the shape of a ring with the inside of the passage opening 25 and outside the edge area 58 ,

The grid according to the execution 50 is a periodic, binary structure that is caused by the EUV collector 24 reflected non-uniform radiation, for example, with infrared wavelength, in a zeroth order destructively interferes and thus a stray light intensity is suppressed in the zeroth order. Within the unit cell 93 corresponds to one surface of the diffractive positive structure 56 exactly the surface of the surrounding diffraction depression 57 ,

Between the respective diffraction positive structures 56 Again, as two columns running, the diffraction negative structures 57 arranged.

In the diffraction orders is diffracted in a total of four diffraction directions.

Instead of square positive diffraction structures 56 can also differently shaped positive diffraction structures in the execution after 50 are used, for example, rectangles, diamonds, parallelograms or hexagons.

The distribution of the unit cells 93 over the surface of the false light section 31 or the false-light addition section 32 does not have to be strictly periodic, but can generally follow a Dirichlet decomposition. For details on the Dirichlet decomposition refer to the book by Rolf Klein "Algorithmic Geometry", Springer 2005 ,

The unit cell 93 is thus generally with a binary structure of a diffraction-positive structure 56 and a diffraction groove filled, so that there is a balanced area ratio of positive structure and depression.

Depending on the design of the diffraction structure according to 50 may be the wrong-way section 31 and / or the mischief addition section 32 be divided into one or more unit cells, which are significantly smaller than a coherence length of the false light. The unit cells can be periodically continued in space so that the mischief section 31 and / or the mischief addition section 32 is parqueted. Different tilings are in the 50f , shown, eg square or hexagonal. Other tilings are possible. The unit cells are provided with exactly one or a plurality of structural types. The structuring can be binary (binary lattice), ternary (ternary lattice) or even linear (blaze lattice). In binary structuring, a ratio of diffraction positive structures and diffraction negative structures may be balanced.

51 shows a further embodiment for the false light addition section 32 with a hexagonal arrangement of the unit cells 93 and diffraction positive structures 56 who in the supervision after 51 have a round cross-section.

In the execution after 51 is diffracted into the higher diffraction orders in six diffraction directions.

The 52 ff. show further examples of diffraction structures of variants of false-light additional sections 32 , for which, in turn, when viewed over respective unit cells, an area ratio between the surfaces of the diffractive positive structures 56 and the surfaces of the diffraction negative structures 57 one is. Components and functions corresponding to those described above with reference to FIGS 50 and 51 already described, bear the same reference numbers and will not be discussed again in detail.

52 shows a distribution of the diffraction-positive structures 56 and the intermediate diffraction negative structures 57 in the style of black and white fields of a chessboard.

53 shows a tiling of a surface of the false light addition section 32 with diffractive positive structures 56 and diffraction negative structures 57 in the form of a polygenic structure. Some of the diffractive positive structures are square, others are equilateral triangular. The same applies to the diffraction negative structures 57 , Also another distribution of in the 53 tiling in diffraction positive structures and diffraction negative structures is possible, so that a binary grating with two height types, a ternary grating with three height types, a quaternary grating with four height types or a grid of even higher order can result. The same applies to the tilings described below.

54 shows another example of a polygenic diffraction patterning from diffractive positive structures 56 and diffraction negative structures 57 , The diffraction positive structures 56 have in supervision a round cross section and the diffraction negative structures 57 on the one hand have an approximately hexagonal and on the other hand an approximately square cross-section.

Further examples of tiling based on aperiodic structures are shown in the 55 and 56 ,

57 shows a structuring based on a random pattern. Again, the area of all positive diffractive structures 56 equal to the area of all diffraction negative structures 57 is.

58 shows a corresponding binary structure in the form of concentric squares of diffractive positive structures and diffractive negative structures 57 ,

59 shows a corresponding diffraction structure of concentric triangles and 60 from concentric ellipses.

Such diffraction structures, as above in particular in connection with the 58 to 60 can also cover the entire EUV collector.

61 shows a corresponding binary diffraction structure based on hyperbola. The hyperbolic lines are shown graduated, but can not be graded.

62 shows a corresponding diffraction structure based on semicircles, each case in circulation in the region of a horizontal axis 94 a change between diffraction-positive structure 56 and diffraction depression 57 takes place.

63 shows one to 62 similar binary diffraction structure in which instead of semicircles diffraction positive structures and diffraction negative structures in the form of semi-ellipses exist.

64 shows a corresponding binary diffraction structure in which the diffractive positive structures 56 and the intermediate diffraction negative structures 57 are designed as horizontal lines of equal width.

65 shows a binary diffraction structure in which the diffractive positive structures 56 as from the passage opening 25 each outgoing and intersecting parabolas are formed, between which in turn the diffraction negative structures 57 lie.

66 shows a binary diffraction structure, in turn, starting from the passage opening 25 Parabolas spikey towards the edge area 58 run.

The above explained 58 to 66 are shown with a circular boundary, which indicates that these diffraction structures can extend over an entire collector surface of each EUV collector. Alternatively, the diffraction structures illustrated in these figures can also be embodied in a false-light additional section with differently shaped boundary, that is to say, for example, a square or rectangular boundary or bounded in the form of a tile of one of the above-explained tilings.

The 67 and 68 show examples of binary random structures with diffractive positive structures and intermediate diffraction negative structures. The random structure after 67 has diffractive positive structures 56 in a distribution reminiscent of a scrim without preferential direction. Also the arrangement after 68 reminiscent of a thread lay, in this case with a vertical preferred direction.

69 shows a further variant of the diffraction structure of the false light addition section, starting from the semicircular design after 62 the semicircles in the area of a vertical axis 95 are arranged mirror-symmetrically, so that each result in quadrants arranged circular sections whose Azimuthstreckung each slightly larger than 90 °.

The above-explained diffraction structures can cause the EUV collector 24 reflected non-uniform radiation, for example, with infrared wavelength, in a zeroth order destructively interferes and thus a stray light intensity is suppressed in the zeroth order. For example, due to periodicity of unit cells of the diffraction patterns over an area of the stray light portion 31 or the false-light addition section 32 In addition, higher orders of false light on the intermediate focus 26 (See, for example 2 ) and removed via the beam dumps 37.

The mischief section 31 and / or the false light additional section 32 can thermally from the collector 24 be decoupled. A complex cooling of the collector 24 can then be omitted. A main body of the EUV collector 24 can be made of aluminum. Alternative materials for this basic body are copper, alloys with the component copper and / or aluminum, or powder-metallurgically produced alloys of copper and aluminum oxide or different structural forms of silicon.

The projection exposure apparatus is used to produce a microstructured or nanostructured component 1 used as follows: First, the reflection mask 10 or the reticle and the substrate or the wafer 11 provided. Subsequently, a structure on the reticle 10 on a photosensitive layer of the wafer 11 using the projection exposure system 1 projected. By developing the photosensitive layer, a micro or nanostructure is then formed on the wafer 11 and thus produces the microstructured component.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2017/174423 A1 [0002, 0015]
• US 2013/0335816 A1 [0002]
• US 7084412 B2 [0002]
• DE 102009045096 A1 [0050]
• DE 102012202675 A1 [0051]

Cited non-patent literature

• Michael Bader's "Space-Filling Curves - An Introduction to Applications in Scientific Computing", Volume 9 of Texts in Computational Science and Engineering, Springer-Verlag, 2013 [0112]

Claims (19)

EUV collector (24) for use in an EUV projection exposure system (1), - Wherein the collector (24) is designed to guide EUV Nutzlicht (3), which is emitted from a plasma source region (19), - Wherein at least one structured mischief section (31) of an application surface (33) of the collector (24) for discharging stray light radiation (30) is carried out by diffraction, wherein the wavelength of the false light (30) from that of the useful light (3 ), - Wherein the false light section (31) is designed as a computer-generated hologram. Collector after Claim 1 characterized in that the simplex portion (31) is formed with such a height profile and / or refractive index profile that a resulting complex amplitude at each location on the simplex portion (31) has an amount different from a median one Amount different by less than 20%. Collector after Claim 1 or 2 characterized by an embodiment of the straightening section (31) such that the straightening light (30) is guided to a plurality of separate discharge locations (37). Collector after one of the Claims 1 to 3 characterized in that at least one false light additional portion (32) of an urging surface (33) of the collector (24), which is provided in addition to the straightening portion (31), for discharging stray light radiation (30) is performed whose wavelength differs from that of the useful light (3). Collector after Claim 4 , characterized in that the false light addition section (32) is designed as a diffraction grating with diffraction positive structures (56) and intermediate diffraction negative structures (57). Collector after Claim 4 or 5 characterized in that in a substrate (44) of the collector (24) at the location of the loading surface (33) substrate modulations (48) are carried out, wherein the false light additional portion (32) has a coating (43) of the loading surface (33) wherein diffraction negative structures (42) are present in the stray light addition section (32) at the location of the substrate modulations (48) of the loading surface (33). Collector after one of the Claims 1 to 6 , characterized in that the false light section (31) and / or the false light additional section (32) is provided with a highly reflective for the EUV Nutzlicht (3) multi-layer coating (43). Collector after one of the Claims 1 to 7 characterized in that diffraction positive structures (35; 41; 56) and / or diffraction negative structures (36; 42; 57) of the squeeze light section (31) and / or the sidelay addition section (32) are in particular Repeating patterns on the loading surface (33) are applied. Collector after one of the Claims 1 to 8th characterized in that diffraction positive structures (35; 41; 56) and / or diffraction negative structures (36; 42; 57) of the squeegee section (31) and / or the sidelay addition section (32) are so made in that sections of the diffraction positive structures and / or the diffraction negative structures continuously merge into one another and / or that sections of the diffraction positive structures (35; 41; 56) and / or diffraction negative structures (36; 42; 57) are discretely oriented and / or that sections of the diffraction positive structures (35; 41; 56) and / or the diffraction negative structures (36; 42; 57) are linear and / or that sections of the diffraction positive structures (35; 41; 56 ) and / or the diffraction negative structures (36; 42; 57) run in the form of a two-dimensional grid and / or - that sections of the diffraction positive structures (35; 41; 56) and / or the diffraction negative structures (36; 42; 57) in the form of a surface-filling tiling and / or - that portions of the diffractive positive structures (35; 41; 56) and / or the diffraction negative structures (36; 42; 57) in the form of a random pattern. Method for producing an EUV collector (24) according to one of Claims 1 to 9 comprising the following steps: - providing a collector substrate (44), - processing the substrate (44) and / or coating the substrate (44) with subsequent processing of the coating to produce the structured mischief section (31). Method according to Claim 10 , characterized in that during the processing of the substrate (44) takes place a relative movement between the substrate (44) and a structuring unit (62) for producing the structured stray light portion (31). Method according to Claim 10 or 11 , characterized in that during machining, a mechanical, chemical or electromagnetic removal of substrate material takes place. Method according to Claim 11 or 12 characterized in that at least one radiation source (68) of the structuring unit (62) is switched between an active patterning mode and an inactive mode during editing. Method according to one of Claims 10 to 13 , characterized in that a structuring unit, which is used for processing, an optical presetting component (84; 85; 86) for specifying a diffraction structure of the stray light portion (31). Lighting system with an EUV collector (24) according to one of Claims 1 to 9 and with an illumination optical system (6) for illuminating an object field (4), in which an object (10) to be imaged can be arranged, with the EUV useful light as illuminating light (3). Optical system with a lighting system after Claim 15 and with projection optics (7) for imaging the object field (4) into an image field (8), in which a substrate (11) can be arranged on which a section of the object to be imaged (10) is to be imaged. Projection exposure system (1) with an optical system according to Claim 16 and with an EUV light source (2). A method of fabricating a patterned device comprising the steps of: providing a reticle (10) and a wafer (11), projecting a pattern on the reticle (10) onto a photosensitive layer of the wafer (11) using the projection exposure apparatus Claim 17 , - Generating a micro and / or nanostructure on the wafer (11). Structured component produced by a method according to Claim 18 ,

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