DE102018120245B4 - H-bridge for generating short light pulses using an LED lamp and high pulsed operating voltages and methods for their operation - Google Patents

Abstract

Device for controlling at least one light-emitting diode (LED1) using an H-bridge (H) to generate short light pulses (LP)
- with a first transistor (T1) of the H-bridge (H), which has a first connection (1) and a second connection (2) and a first control connection (G1);
- with a second transistor (T2) of the H-bridge (H), which has a third connection (3) and a fourth connection (4) and a second control connection (G2);
- with a third transistor (T3) of the H-bridge (H), which has a fifth connection (5) and a sixth connection (6) and a third control connection (G3);
- with a fourth transistor (T4) of the H-bridge (H), which has a seventh connection (7) and an eighth connection (8) and a fourth control connection (G4);
- with a first light-emitting diode (LED1) with an anode (A) and with a cathode (K);
- with a first positive supply voltage (VCC1);
- with a second positive supply voltage (VCC2), which can be equal to the first positive supply voltage (VCC1);
- with a first negative supply voltage (GND1);
- with a second negative supply voltage (GND2), which can be equal to the first negative supply voltage (GND1);
- wherein the first terminal (1) of the first transistor (T1) is connected to the first positive supply voltage (VCC1);
- wherein the fifth terminal (5) of the third transistor (T3) is connected to the second positive supply voltage (VCC2);
- wherein the second connection (2) of the first transistor (T1) is connected to the third connection (3) of the second transistor (T2);
- wherein the sixth connection (6) of the third transistor (T3) is connected to the seventh connection (7) of the fourth transistor (T4);
- wherein the fourth terminal (4) of the second transistor (T2) is connected to the first negative supply voltage (GND1);
- wherein the eighth connection (8) of the fourth transistor (T4) is connected to the second negative supply voltage (GND2);
- wherein the cathode (K) of the first light-emitting diode (LED1) is connected to the second connection (2) of the first transistor (T1) and the third connection (3) of the second transistor (T2);
- wherein the anode (A) of the first light-emitting diode (LED1) is connected to the sixth connection (6) of the third transistor (T3) and the seventh connection (7) of the fourth transistor (T4);
- wherein the first transistor (T1) has a first operating state and a second operating state and
- wherein in the first operating state of the first transistor (T1), the first connection (1) of the first transistor (T1) is connected to the second connection (2) of the first transistor (T1) with a lower electrical resistance than in the second operating state;
- wherein the second transistor (T2) has a first operating state and a second operating state and
- wherein in the first operating state of the second transistor (T2), the third connection (3) of the second transistor (T2) is connected to the fourth connection (4) of the second transistor (T2) with a lower electrical resistance than in the second operating state;
- wherein the third transistor (T3) has a first operating state and a second operating state and
- wherein in the first operating state of the third transistor (T3), the fifth connection (5) of the third transistor (T3) is connected to the sixth connection (6) of the third transistor (T3) with a lower electrical resistance than in the second operating state;
- wherein the fourth transistor (T4) has a first operating state and a second operating state and
- wherein in the first operating state of the fourth transistor (T4), the seventh connection (7) of the fourth transistor (T4) is connected to the eighth connection (8) of the fourth transistor (T4) with a lower electrical resistance than in the second operating state;
- wherein the first transistor (T1) assumes the first operating state when its first control terminal (G1) is in a first logical state and assumes the second operating state when its first control terminal (G1) is in a second logical state;
- wherein the second transistor (T2) assumes the first operating state when its second control terminal (G2) is in a first logical state and assumes the second operating state when its second control terminal (G2) is in a second logical state;
- wherein the third transistor (T3) assumes the first operating state when its third control terminal (G3) is in a first logical state and assumes the second operating state when its third control terminal (G3) is in a second logical state;
- wherein the fourth transistor (T4) assumes the first operating state when its fourth control terminal (G4) is in a first logical state and assumes the second operating state when its fourth control terminal (G4) is in a second logical state;
- wherein the device has a control device (ST) which controls the first control connection (G1) and the second control connection (G2) and the third control connection (G3) and the fourth control connection (G4);
- Wherein the control connections (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) can be in a first logical state or a second logical state
- Wherein the control device (ST) is designed so that the control connections (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) are either
- are in a first overall state, an intermediate state (PZ), in which the first control connection (G1) is in the second operating state and the second control connection (G2) is in the second operating state and the third control connection (G3) is in the second operating state and the fourth control connection (G4) is in the second operating state, or
- are in a second overall state, a “PAn” state, in which the first control connection (G1) is in the second operating state and the second control connection (G2) is in the first operating state and the third control connection (G3) is in the first operating state and the fourth control connection (G4) is in the second operating state, or
- are in a third overall state, a “POff” state, in which the first control connection (G1) is in the first operating state and the second control connection (G2) is in the second operating state and the third control connection (G3) is in the second operating state and the fourth control connection (G4) is in the first operating state;
- and the control device (ST) is designed so that a change can only take place from the first overall state, the intermediate state (PZ), to the second overall state, the “PAn” state, and vice versa, or from the first overall state, the intermediate state ( PZ), into the third overall state, the “POff” state, and vice versa;
- whereby the charge carriers in the first light-emitting diode (LED1) are reduced after a change from the second overall state, the “PAn” state, to the first overall state, the intermediate state (PZ), with a charge carrier lifetime (τ);
- wherein the control device (ST) is designed to, after the first time (t ₀ ) of the change from the second overall state, the “PAn” state, to the first overall state, the intermediate state (PZ), a change from the first overall state , the intermediate state (PZ), into the third overall state, the “POff” state, after a delay time (Δt) that is smaller than the charge carrier lifetime (τ) and
- wherein the control device (ST) is designed so that the second overall state, the “PAn” state, is not assumed for longer than a switch-on time (τ _pp ) and
- whereby the control device (ST) is designed so that the third overall state, the “POff” state, does not last longer than a clearing time (τ _pn ) is taken and where the clearing time (τ _pn ) is smaller than the charge carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1) and
- where the switch-on time (τ _pp ) is smaller than the charge carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1).

Description

Generic term

The proposed method and the proposed device relate to the generation of short light pulses by controlling at least one light-emitting diode, also referred to below as LED.

General introduction

LIDAR will play an important role in ADAS and autonomous driving in the future. Strict functional safety requirements require reliable and sensitive systems so that the right decisions can be made in extreme situations. The short light pulses required for this are important in many applications. If necessary, more expensive laser diodes are often used to enable pulses shorter than approx. 10ns. A main application for pulsed light sources is light transit time measurement for distance determination (e.g. Flash LIDAR). Since the measurement information is contained in the edges of the pulses, shortening the pulse length is synonymous with an improvement in efficiency, which can be directly translated into an improvement in performance. Especially with LIDAR systems with a long range, the system performance is limited by the permissible emission power. An efficient light source is therefore at least as important for system performance as a sensitive sensor. In general, LIDAR systems are used with laser beams that can be deflected by reflection.

However, the problem of high energy density arises here. This can damage eyes.

Flash LIDAR systems are now implemented with dedicated infrared pulse sources and are limited in their range and sensitivity by a legally limited transmission power to comply with eye safety.

Short light pulses from pulsed light sources are therefore of outstanding importance for measuring the time of flight to determine distance. The efficiency of such light transit time measurements is determined by the pulse length in certain methods. Shortening the pulse length increases efficiency, as a greater range can then be achieved while maintaining the same average light output.

State of the art

LIDAR systems in the automotive sector are now generally built with dedicated lighting sources. As a result, for reasons of acceptance, one is limited to the invisible wave range and has to make do with small dimensions in terms of the installation space available in the vehicle. Both limitations have a reducing effect on the maximum transmission power and thus on the performance of the system, taking eye safety into account. An increase in range is urgently needed here. As further explained below, a key issue is the generation of short light pulses using light-emitting diodes (LEDs) or laser diodes.

According to the state of the art, LED pulses are generated by switchable current or voltage sources. This typically results in rise and fall times of the order of 10ns. These are caused by the recharging of the junction capacitance in conjunction with parasitic components of the diode and its connections.

From the WO 2014/124 768 A1 a method for a vehicle is known that includes detecting the operating state of a vehicle, generating a modulated signal depending on the operating state, and controlling a lighting device of the vehicle depending on the modulated signal. The lighting device is according to the technical teaching of WO 2014 / 124 768 A1 designed to illuminate a scene in an environment of the vehicle or within the vehicle. The procedure of WO 2014 / 124 768 A1 also includes receiving light that was emitted by the lighting device and reflected by an object in the scene, generating a received signal depending on the received light and determining distance information of the object depending on the modulated signal and the received signal. The technical teaching of the WO 2014 / 124 768 A1 This leaves it open as to how particularly short pulses, which are required for good depth resolution, should be generated.

From the EP 2 160 629 B1 For example, a method for providing driver assistance to a driver is known, in which, among other things, a visible light source in the form of a light-emitting diode is driven to emit pulsating light in a predetermined mode using the driving data therethrough. The lighting function is maintained despite the pulsation. According to the technical teaching of the EP 2 160 629 B1 With the help of the pulses emitted in this way, objects in the lighting area can be detected and functions of the vehicle and/or actions of the driver can then be triggered by the recorded data.

From the DE 10 2006 044 794 A1 A vehicle-based lidar system is known in which the transmitter unit is integrated into the vehicle light. Also the technical teaching of the DE 10 2006 044 794 A1 This leaves it open as to how particularly short pulses, which are required for good depth resolution, should be generated.

From the DE 10 2016 205 563 A1 a lighting device for a vehicle and a vehicle headlight are known. Lighting device for a vehicle according to the technical teachings of DE 10 2016 205 563 A1 is with a light source with which useful light and/or auxiliary light can be emitted into an environment, with a sensor with which useful light and/or auxiliary light reflected from the environment can be at least partially detected, and with electronics for evaluating the useful light detected by the sensor and /or auxiliary light. Also the technical teaching of the DE 10 2016 205 563 A1 leaves open how particularly short pulses, which are required for good depth resolution, should be generated.

From the DE 20 2013 008 067 U1 The control of LEDs of a headlight is known depending on a sensor that detects the light of the LED and the control of the LED is changed depending on the detected light signal. From the DE 10 2013 001 273 A1 Such a device is known in which the LED itself is used as a photodetector for this purpose.

From the DE 10 2013 002 668 A1 The use of a vehicle's lighting device as a distance and speed measurement system is known. The technical teaching of the DE 10 2013 002 668 A1 does not reveal how the pulses can be made particularly short.

From the CN 102 612 231 A The control of an LED module with two LED chains connected in anti-parallel is known. The two LED chains should be in accordance with the technical teachings of CN 102 612 231 A (see e.g. section [0004] of the CN 102 612 231 A ) have a different color temperature and are controlled and operated via an H-bridge. The function of the H-bridge is to be able to reverse the current direction and thus use the current directivity characteristics of the LEDs to select the different LED strands during operation. Also the technical teaching of the CN 102 612 231 A leaves open how particularly short pulses, which are required for good depth resolution, should be generated.

A similar method for selecting between two different LEDs connected in anti-parallel by reversing the polarity using an H-bridge is from the DE 10 2006 041 013 A1 known.

Also from the JP 2005 - 158 483 A The use of an H-bridge to control an LED, in this case an organic LED, is known. From there, the control of the LED with blocking pulses is also known. It says: “As in, for example 8th shown, e is his preferred construction, the forward current into the electroluminescent component (reference number 10 of JP 2005 - 158 483 A ) with a control pulse (reference symbol b der JP 2005 - 158 483 A ) which has the switching means in the form of the first transistor (reference symbol Tr1 der JP 2005 - 158 483 A ) switches, and that of the control devices (reference number 22 of JP 2005- 158 483 A ) is fed intermittently. In this way [...] the electroluminescent component (reference number 10a der JP 2005- 158 483 A ) [...] can be made to be switched on again and again by inverse control pulses from the control device (reference number 22 of the JP 2005- 158 483 A ) [...] are generated." Also the technical teaching of the JP 2005- 158 483 A leaves open how particularly short pulses, which are required for good depth resolution, should be generated.

From the US 2016 / 0 257 306 A1 and the DE 10 2016 202 505 A1 The transmission of data between vehicles and with infrastructure devices using headlights and taillights is known.

From the DE 10 2013 001 274 A1 a method for controlling a matrix LED headlight is known, in which this photodetector property of an LED biased in the reverse direction is also exploited.

From the US 4,571,506 A a device and an associated method for quickly modulating the light emission of an LED are known. The process uses an LED (reference symbol LED der US 4,571,506 ) by a non-modulated current from a power source (“Precision Current Regulator” in 2 the US 4,571,506 A ) brought to a DC operating point. This DC operating point is controlled by a series-connected coil (reference symbol L2). US 4,571,506 A ) stabilized. Through a modulated bipolar current source (transistor with reference numbers Q4 and Q3) connected to the same LED connection US 4,571,506 A ), an additional modulated small signal current is modulated onto the LED current. A capacitor (reference symbol CI der US 4,571,506 A in theirs 2 ) differentiates one of the two differential control signals and ensures a short undershoot below the 0 V line during the switch-off process, which then returns to a positive low signal value. This ensures that the relevant space charge zone of the LED is cleared more quickly. From the US 4,571,506 A (Column 2 lines 59 to 65 of US 4,571,506 A ) it is also already known that higher blocking voltage values accelerate the clearing of the space charge zone. According to the state of the art and, for example, the technical teaching of US 4,571,506 A , but this reverse voltage can only assume a limited amount without damaging the LED (e.g. column 2 lines 27 to 36 of the US 4,571,506 A ).

From the DE 197 04 496 A1 It is known that the modulation of the sensitivity of light sensors by a controller is known.

From the US 9,653,642 B1 a multi-color LED is known. Their use in headlights is suggested.

From the DE 10 2015 110 233 A1 an image generating device is known which generates a color image by sequentially emitting different colors of illumination and recording associated images.

From the DE 20 2017 103 902 U1 The use of a spotlight as a projection device is known.

What all of the aforementioned fonts have in common is that even when combined, they do not solve the speed problem for the pulse operation of the headlights.

Task

In order to make LIDAR systems better and more reliable, the sensitivity of the system must be increased, for example to increase the range or enable the visibility of dark objects. This can be done either through a more sensitive sensor or through increased transmission power. Sensors are already being operated close to physical limits, while the transmission power is subject to legal restrictions. A significant improvement can therefore only be achieved by improving the light source while taking into account the applicable legal restrictions.

As will be explained below, an essential sub-task is to generate short light pulses without slow rise and fall times in the pulse width, which are caused by parasitic effects.

The proposed technical solution is intended to massively shorten the rise and fall times of an LED light pulse in order to generate extremely short pulses (<1ns). This means that cost-effective LEDs can be used efficiently and powerfully in applications such as Flash LIDAR. In various applications, more expensive laser diodes could therefore be replaced by LEDs.

The proposed device should preferably also be able to transmit data.

This object is achieved by a device according to claim 1 and a method according to claim 4.

Solution to the task

1. 1. Verkürzung der Pulsdauer der Lichtquelle;
2. 2. Vergrößerung der Lichtquellenapertur;
3. 3. Verwendung von sichtbarem Licht statt IR-Licht, um aufgrund des natürlichen Lidreflexes in eine höhere gesetzlich geregelte Intensitätsobergrenze zu fallen.

When preparing the proposal, it was recognized that the required significant improvement can only be achieved by improving the light source, taking into account the applicable legal restrictions, and that there are three options:

1. 1. Shortening the pulse duration of the light source;
2. 2. Enlargement of the light source aperture;
3. 3. Using visible light instead of IR light to fall within a higher legally regulated upper limit of intensity due to the natural eyelid reflex.

By expanding the headlight functionality to a LIDAR light source, necessity can be turned into a virtue. This assumes that you have a headlight capable of pulsating. Because instead of continuous static operation, as in state-of-the-art LED headlights, they are now controlled in pulse mode, the current functionality of the headlights can be maintained with a comparable average power and sufficient pulse rate, without any harm to people visible difference results. Pulsed light modulation can also be superimposed on a static lighting signal.

For the purposes of this disclosure, headlights are to be understood as meaning all lights of a vehicle, in particular all exterior lights of a vehicle. These are in particular, but not only: the headlights for daytime driving lights, the low beam, the high beam, the decorative lights, the direction indicators, the brake lights, the reversing lights, the tail lights, the fog lights, the rear fog lights, the warning lights and the signal lights (e.g Blue lights from the police or fire brigade, the yellow warning lights from heavy transport, etc.).

Since the lamps are located in different positions on the vehicle, a map of the surrounding area (UK) can be generated at close range through triangulation.

If necessary, this can be exchanged with vehicles in front and behind via a data link, which can be established using the proposed light pulse-capable headlight.

What is achieved is that time information is imposed on the emitted light, which can be used to measure distance. For white headlights, this can be implemented by using RGB LEDs instead of fluorescent LEDs (LED2...n) as lamps for the actual lighting purpose, as the latter do not allow rapid modulation. It is important that modulation is possible in at least one spectral range.

This can be achieved, for example, by extinguishing the light of a fluorescent LED (LED2...n) in a spectral range using a filter (F1) and replacing it with the light of an additional LED (LED1) with a narrow wavelength, which then can be quickly modulated. A quickly modulated headlight (SW) is proposed here, which can be used for LIDAR applications.

This spectral range of the emitted and modulated wavelength can then be separated by an optical bandpass filter (F1) for a receiver (PD1).

By using the vehicle headlights as a LIDAR light source, on the one hand, a higher overall transmission power can be achieved compared to significantly smaller IR light sources with the same intensity due to the large aperture, and on the other hand, legally higher upper intensity limits apply in the visible wavelength range, since the natural eyelid reflex comes into play as a protective function. Thus, such an optical system that works in the visible wavelength range is superior to a system that is based on infrared radiation. This raises the problem of generating short light pulses (LP), particularly with the light source already present on the vehicle, such as headlights (SW), direction indicators, brake lights, taillights, reversing lights, etc. and possibly additional light sources.

The aim of the proposed device and the proposed method should be to generate light pulses (LP) that are as short as possible using a first LED (LED1) as the illuminant of such headlights (SW1).

The afterglow of the first LED (LED1) after switching off the operating current due to the charges stored in the barrier layer of the first LED (LED1) should now be avoided by ensuring that the charges stored in the barrier layer of the first LED (LED1) are not broken down by recombination , but are broken down by active suction of these charge carriers.

In order to achieve this suction, it is suggested to reverse the operating voltage of the first LED (LED1). Furthermore, it is proposed to carry out this polarity reversal using a proposed H-bridge (H) using a proposed method. In order to further accelerate the clearing of the remaining charge carriers, it is proposed to carry out the actual clearing process with the help of a charge pump or a voltage converter and thereby maximize the electric field strength that acts on the charge carriers during the clearing process.

In order to increase the edge steepness, a high voltage must be applied to the first LED (LED1) for a short time for the rising edge. The slope is proportional to the applied voltage in the first order. To accelerate the falling edge, the same must be done with reversed polarity until the junction capacitance has been actively discharged by the driver of the first LED (LED1). An H-bridge (H) offers exactly this control option. It is important to ensure that the overvoltage is not present for too long and that the first LED (LED1) is not loaded beyond its limits.

When developing this proposal, it was recognized that with an H-bridge (H) or a comparable circuit by briefly applying a positive voltage in the flow direction of the first LED (LED1), followed by a high negative voltage in the reverse direction of the first LED (LED1) the parasitic components of the first LED (LED1) and their connection to the driver are reloaded more quickly, which leads to a significantly improved edge steepness and thus enables much shorter pulses. It was also recognized that the charge stored in the parasitic elements of the first LED (LED1) is finite and that the high negative voltage for extracting the stored charge carriers can therefore be fed from charge pumps with sufficient capacity, which allows an increase in the extraction voltage mentioned below negative high voltage in the reverse direction of the first LED (LED1) by a multiple of the operating voltage, i.e. the forward voltage in the flow direction of the first LED (LED1).

In a first embodiment of the proposal, a first light-emitting diode (LED1), which has a cathode (K) and an anode (A), is controlled. The first light-emitting diode (LED1) is connected here via its cathode (K) to the second connection (2) of the first transistor (T1) and the third connection (3) of the second transistor (T2) and via its anode (A) to the sixth Connection (6) of the third transistor (T3) and connected via the seventh connection (7) of the fourth transistor (T4). The first connection (1) of the first transistor (T1) and the fifth connection (5) of the third transistor (T3) are connected to the first positive supply voltage (VCC1). The fourth connection (4) of the second transistor (T2) and the eighth connection of the fourth transistor (T4) are connected to the second negative supply voltage (GND2). The first transistor (T1) can assume two operating states, a first operating state and a second operating state. If the first transistor (T1) is in a first operating state, the electrical current can flow from the first positive supply voltage (VCC1) to the cathode (K) of the light-emitting diode (LED1). In the second operating state of the first transistor (T1), the first connection (1) of the first transistor (T1) is connected to the second connection (2) of the first transistor (T1) with a higher resistance than in the first operating state the first connection (1) of the first transistor (T1) is connected to the second terminal (2) of the first transistor (T1). In this second operating state, the electrical current cannot flow to the cathode (K) of the light-emitting diode (LED1). The first transistor (T1) assumes the first operating state when its first control connection (G1) is in a first logical state and the second operating state when its first control connection (G1) is in a second logical state.

The second transistor (T2) can assume two operating states, a first operating state and a second operating state. If the second transistor (T2) is in a first operating state, the charge carriers can flow from the third connection (3) of the second transistor (T2) to the fourth connection (4) of the second transistor (T2). In a second operating state of the second transistor (T2), the third connection (3) of the second transistor (T2) is connected to the fourth connection (4) of the second transistor (T2) with a higher resistance than the third connection (3) in the first operating state, is connected to the fourth terminal (4) of the second transistor (T2). In this second operating state, the charge carriers essentially cannot flow through the second transistor (T2). The second transistor (T2) assumes the first operating state when its second control connection (G2) is in a first logical state and the second operating state when its second control connection (G2) is in a second logical state.

The third transistor (T3) can assume two operating states, a first operating state and a second operating state. If the third transistor (T3) is in a first operating state, so The charge carriers can flow from the fifth connection (5) of the third transistor (T3) to the sixth connection (6) of the third transistor (T3). In a second operating state of the third transistor (T3), the fifth connection (5) of the second transistor (T2) is connected to the sixth connection (6) of the third transistor (T3) with a higher resistance than in the first operating state the fifth connection (5) of the second transistor (T2) is connected to the sixth terminal (6) of the third transistor (T3). In this second operating state, the charge carriers essentially cannot flow. The third transistor (T3) assumes the first operating state when its third control connection (G3) is in a first logical state and the second operating state when its third control connection (G3) is in a second logical state.

The fourth transistor (T4) can assume two operating states, a first operating state and a second operating state. If the fourth transistor (T4) is in a first operating state, the charge carriers can flow from the seventh connection (7) of the fourth transistor (T4) to the eighth connection (8) of the fourth transistor (T4). In a second operating state of the fourth transistor (T4), the seventh connection (7) of the fourth transistor (T4) is connected to the eighth connection (8) of the fourth transistor (T4) with a higher resistance than the seventh connection (7) of the fourth transistor (T4 ) is connected in the first operating state to the eighth connection (8) of the fourth transistor (T4). In this second operating state, the charge carriers essentially cannot flow. The fourth transistor (T4) assumes the first operating state when its fourth control terminal (G4) is in a first logical state and the second operating state when its fourth control terminal (G4) is in a second logical state.

The control connections (G1, G2, G3, G4) are controlled by a control element (ST). Each of the control connections (G1, G2, G3, G4) can be in a first logical state or in a second logical state. However, it is advantageous if the control connections (G1, G2, G3, G4) are in one of the three following overall states.

In the first overall state, the “PZ” state (PZ), all control connections (G1, G2, G3, G4) are in a second logical state. This means that all transistors (T1, T2, T3, T4) are in their second operating state and therefore no electrical current can flow and the first LED (LED1) does not emit any light. In pulse mode, the proposed device is preferably in the “PZ” state (PZ).

In the second overall state, the "PAn" state (PAn), the second control connection (G2) and the third control connection (G3) are in a first logical state and thus the second transistor (T2) and the third transistor ( T3) in the first operating state. The first control connection (G1) and the fourth control connection (G4) are in a second logical state. The first transistor (T1) and the fourth transistor (T4) are therefore in the second operating state. The first ED (LED1) is energized in the forward direction and light is emitted from the LED (LED1). Thus, the electrical current flows from the second positive supply voltage (VCC2) via the third transistor (T3), which is in the first operating state, and the first LED (LED1) and the second transistor (T2), which is in the first operating state, to the first negative supply voltage (GND1). In pulsed operation, the “PAn” state (PAn) is preferably only assumed for a very short time, the switch-on time (τ _pp ).

In a third overall state, the "POff" state (POff), the second control connection (G2) and the third control connection (G3) are in a second logical state and thus the second transistor (T2) and the third transistor ( T3) in the second operating state. The first control connection (G1) and the fourth control connection (G4) are in a first logical state. The first transistor (T1) and the fourth transistor (T4) are therefore in the first operating state. The first LED (LED1) is energized with the discharge current in the reverse direction and does not emit any light. The electrical discharge current now flows to eliminate the charge carriers stored in the first LED (LED1) and the second transistor (T2) and the third transistor (T3) immediately after the polarity reversal from the first positive supply voltage (VCC1) via the first transistor (T1 ), which is in the first operating state and the first LED (LED1) and the fourth transistor (T4), which is in the first operating state, to the second negative supply voltage (GND2). In pulsed operation, the “PAn” state (PAn) is preferably only assumed for a very short time, the clearing time (τ _pn ).

In a proposed variant, the control element (ST) is designed so that there is preferably no direct change from the second overall state, the “PAn” state (PAn), to the third overall state, the “PAus”. State (POff) can take place. In between, the first overall state, the “PZ” state (PZ), must always be assumed in order to avoid short circuits (see 2 ).

In order to remove the charge carriers from the barrier layer of the first LED (LED1) using the proposed method, the second overall state, the “PAn” state (PAn), is passed through the first overall state, the “PZ” state (PZ) as quickly as possible. , switched to the third overall state, the “POff” state (POff). The switching off process of the first LED (LED1) is described here. At the beginning of the switch-off process, an electrical current flows through the first LED (LED1). The system is in the second overall state, the “PAn” state (PAn). There are therefore charge carriers as storage charge in the first LED (LED1) and light is emitted from it. Now, at a first time (t ₀ ), the switch is made to the first overall state, the “PZ” state (PZ). Since the charge carriers are not cleared out, they are only broken down in the first LED (LED1) with a charge carrier lifetime (τ). In order to accelerate this, the control device (ST) controls a change from the first overall state, the “PZ” state (PZ), to the third overall state, after a delay time (Δt) that is smaller than the charge carrier lifetime (τ). “POff” state (POff). Due to the polarity reversal and the fact that the delay time (Δt) is smaller than the charge carrier lifetime (τ), the charge carriers stored in the depletion zone of the first LED (LED1) are accelerated by means of the now possible discharge current via the first transistor (T1) and the fourth Transistor (T4) removed. It is therefore possible to send shorter light pulses (LP).

In the sense of this disclosure, the state of the device is controlled by the control element (ST) in such a way that for a very short switch-on time (τ _pp ), an increased forward voltage (U _DR ) in the flow direction of the first light-emitting diode (LED1) is present at this first light-emitting diode (LED1 ) is created. Subsequently, an increased clearing voltage (U _RM ) in the blocking direction of the first light-emitting diode (LED1) is then applied to this first light-emitting diode (LED1) for a very short clearing time (τ _pn ). This clearing time (τ _pn ) is preferably dimensioned such that a residual charge of the storage charge is still present in the first light-emitting diode (LED1) after the end of the clearing time (τ _pn ), which protects it from destruction due to avalanche effects.

Advantage of the proposal

1. 1. Befähigung von Scheinwerfern (SW) zur Abgabe kurzer Lichtpulse (LP).
2. 2. Erhöhung der Sendeleitung durch Vergrößerung der Apertur gegenüber gebräuchlichen LIDAR-Lichtquellen, da Scheinwerfer (SW) eine größere Abstrahlfläche haben.
3. 3. Erhöhung der Sendeleistung gegenüber gebräuchlichen LIDAR-Lichtquellen durch Verwendung von sichtbarem Licht unter Ausnutzung des Lidreflexes.
4. 4. Wegfall gesonderter Lichtquellen für LIDAR
5. 5. Höhere Empfindlichkeit und Bandbreite der Empfangsfotodioden im sichtbaren Wellenlängenbereich aufgrund geringerer Eindringtiefe des Lichts in Silizium oder die jeweils betreffenden Halbleiter.
6. 6. Ideale Positionierung der LIDAR Lichtquelle, da Scheinwerfer (SW) bereits optimiert darauf sind, den Gefahrenbereich auszuleuchten.

There are a number of advantages over today's approaches:

1. 1. Capability of headlights (SW) to emit short light pulses (LP).
2. 2. Increasing the transmission line by increasing the aperture compared to common LIDAR light sources, since headlights (SW) have a larger radiation area.
3. 3. Increasing the transmission power compared to common LIDAR light sources by using visible light using the eyelid reflex.
4. 4. Elimination of separate light sources for LIDAR
5. 5. Higher sensitivity and bandwidth of the receiving photodiodes in the visible wavelength range due to the lower penetration depth of the light into silicon or the respective semiconductors.
6. 6. Ideal positioning of the LIDAR light source, as headlights (SW) are already optimized to illuminate the danger area.

Description of the training/training included in the proposal

In another proposed method, the light-emitting diode (LED1) is controlled via an H-bridge.

The first LED (LED1) is illuminated in the forward direction in the so-called up to a first point in time (t ₀ ). “PAn” state of the H-bridge (H) energized. After the first time (t ₀ ), the current supply is reversed at a second time (t ₁ ). This means that from a second point in time (t ₁ ), the LED (LED1) is energized in the “POff” state in the reverse direction until all charge carriers are removed and biased in the reverse direction. The time difference between a first point in time (t ₀ ) and a second point in time (t ₁ ), the delay time (Δt) for remaining in the “PZ” state in which all transistors (T1, T2, T3, T4) are blocked , when changing from the “PAn” state, in which the first LED (LED1) is energized in the flow direction, to the “PAn” state, in which the LED (LED1) is electrically biased in the reverse direction, should be switched again be smaller than the charge carrier lifetime (τ) of the electron-hole pairs in the barrier layer of the first LED (LED1).

In a further embodiment, the proposed device includes a positive charge pump (LPPB) (or a positive voltage converter (SVPB)) for quickly extracting the stored charge carriers and a negative charge pump (LPMB) (or a negative voltage converter (SVM B)) for rapid suction of the stored charge carriers.

In the device proposed here, the positive charge pump (LPPB) (or the positive voltage converter SVPB) is connected to the positive supply voltage (VCC) via its ninth connection (9). The negative charge pump (LPMB) (or the negative voltage converter (SVMB)) is connected to the negative supply voltage (GND) via its eleventh connection (11). The other supply of the charge pumps (LPPB, LPMB) and the voltage converters (SVPB, SVMB) is not shown in the figures. The potential of the tenth connection (10) of the positive charge pump (LPPB) (or the positive voltage converter (SVPB)) is above the potential of the twelfth connection (12) of the negative charge pump (LPMB) (or the negative voltage converter (SMB)). . The voltage potential (VCC1) of the positive charge pump (LPPB) (or the positive voltage converter (SVPB)) is also preferably higher than that of the positive supply voltage (VCC). The voltage potential (GND2) of the output (12) of the negative charge pump (LPMB ) (or the negative voltage converter (SVMB)) for quickly extracting the stored charge carriers is preferably lower than that of the negative supply voltage (GND). The device is supplemented by the charge pumps or voltage converters by adding a positive charge pump (LPPB) (or positive voltage converter (SVPB) is connected with its tenth connection (10) as the first positive supply voltage (VCC1) to the first connection (1) of the first transistor (T1) and the negative charge pump (LPMB) (or the negative voltage converter (SVMB)) for quickly extracting the stored charge carriers is connected with its twelfth connection (12) as a second negative supply voltage (GND2) to the eighth connection (8) of the fourth transistor (T4). As a result, the positive second supply voltage (VCC2) is only connected to the fifth connection of the third transistor (T3) and the negative first supply voltage (GND1) is only connected to the fourth connection of the second transistor (T2). It is now possible to remove the charge carriers more quickly from the barrier layer of the first LED (LED1) using a suitable clearing voltage, which can be generated by the output voltages (VCC1, GND2) of charge pumps (LPPA, LPMB) or voltage regulators (SVPA, SVPB). to remove.

In a further embodiment of the proposed method, the generation of fast light pulses (LP) by prematurely removing the charge carriers from a light-emitting diode (LED) which has a cathode (K) and an anode (A) is proposed.

For this purpose, the first LED (LED1) is initially operated in the forward direction until a switch-off time (t ₀ ) by applying a first potential difference between the anode (A) and the cathode (K), this first potential difference with respect to the cathode (K) as a reference potential node is positive. The first LED (LED1) is then operated by applying a second potential difference between the anode (A) and the cathode (K) of the first LED (LED1), this second potential difference being negative with respect to the cathode (K) as a reference potential node. The first LED (LED1) is therefore operated in the reverse direction from the switch-off time (t ₀ ).

The proposed methodology for generating short light pulses (LP) using light-emitting diodes (LEDs) is particularly suitable for flash LIDAR applications, TOF distance measurement, 3D imaging and optical data link applications.

A headlight (SW) for use in vehicles is therefore proposed here, in which the headlight (SW) is equipped with at least a first LED (LED1) as a light source that can be pulsed. The first LED (LED1) can be a normal LED or a laser diode or an interconnection of several such diodes and/or laser diodes. A series connection of several LEDs is particularly preferred. The previously described H-bridge circuit can preferably be used for this pulsing. It may be desirable not to operate all lamps (LEDs) in pulsed mode. This means that in addition to the pulsed light component, there is then a more or less static light component that is emitted by the headlight (SW). Therefore, in this case, the proposed headlight (SW) can include additional lamps (LED2...n), which then emit this static light component. The headlight (SW) should preferably emit light in the visible wavelength range. This wavelength range is referred to below as the radiated wavelength range (AWB). It is suggested that the headlight (SW) is light-pulse capable in at least one visible wavelength range, the light-pulse-capable wavelength range (LPWB), i.e. can emit light pulses (LP) in order to be able to use it as a light source for the said light-pulse-based measurement methods. The light pulseable wavelength range (LPWB) should be a sub-range of the emitted wavelength range (AWB) of the headlight (SW) or equal to the emitted wavelength range (AWB) of the headlight (SW). It is therefore conceivable, for example, that the headlight (SW) uses lamps other than the first LED (LED1), which e.g. B. stimulate a fluorescent agent to glow, emits white light that is not light-pulse capable, and with the help of a single first LED (LED1) in the light-pulse-capable wavelength range (LPWB) pulsed light with the help of the previously explained control circuit, for example in the form of the said H- Bridge (H) radiates. The first LED (LED1) should therefore be able to emit pulsed light as a light pulse (LP) in this light-pulse-capable wavelength range (LPWB). It is important that this area should be visible in order to provoke the eyelid reflex in humans, which further increases the permissible transmission listing. This increases the range of LIDAR applications. At least the first LED (LED1) is preferably controlled with the previously described H-bridge (H) in order to generate the most intense light pulses (LP) with the shortest possible duration.

Headlight variant 1

An important first variant of the proposed headlight (SW) is provided with a first optically blocking bandpass filter (F1), in which the blocked wavelength range (GWB) lies in the visible emitted wavelength range (GWB) of the headlight (SW). In this variant, the proposed headlight (SW) is provided with at least a second LED (LED2) as a further light source of the headlight (SW). This second LED (LED2) emits visible light through the first optically blocking bandpass filter (F1) at least in the non-blocking wavelength range (NGWB) of the emitted wavelength range (AWB) of the headlight (SW). The first LED (LED1), on the other hand, emits light in the wavelength range (GWB) blocked by the optically blocking bandpass filter (F1) without this light from the first LED (LED1) having to pass through the first optically blocking bandpass filter (F1). This prevents the receiver (MD) and thus the reception channel from being overdriven as a result of a high direct component in the light emitted by the headlight (SW) in the blocked wavelength range (GWB). If the blocked wavelength range (GWB) is chosen to be very narrow and the spectral width of the radiation of the first LED (LED1) is also narrow, a change in the color impression of the light emitted by the headlight (SW) can possibly be avoided.

Headlight variant 2

In a second variant of the proposed headlight (SW), the headlight (SW) has at least one first LED (LED1a) which shines in a first wavelength range (WB1) and at least one second LED (LED1b) which shines in a second wavelength range (WB2 ) radiates as well as at least a third LED (LED1c), which radiates in a third wavelength range (WB3). It particularly preferably has a so-called RGB LED as a light source, which typically comprises three LEDs as an LED group that can shine in three different colors - preferably in RGB, i.e. for example R=Red, G=Green and B=Blue. These three LEDs then represent the first LED (LED1a), the second LED (LED1b) and the third LED (LED1c). However, for a vehicle's headlight as a headlight (SW) and other applications, the luminosity of a single RGB LED is sufficient usually not out. It is therefore typically the case that a first group of several LEDs that can emit in the first wavelength range (WB1) together form the first LED (LED1a) in the sense of this disclosure and that a second group of several LEDs that can emit in the second wavelength range ( WB2) can radiate, together form the second LED (LED1b) in the sense of this disclosure and that a third group of several LEDs, which can radiate in the third wavelength range (WB3), together form the third LED (LED1c) in the sense of this disclosure. The first wavelength range (WB1), the second wavelength range (WB2) and the third wavelength range (WB3) are preferably visible sub-ranges of the emitted wavelength range (AWB) of the headlight (SW). The first wavelength range (WB1) is not the same as the second wavelength range (WB2). Here, “same” in the sense of this disclosure means that the wavelength ranges (WB1, WB2) are not congruent, but can at least partially overlap.

Likewise, the first wavelength range (WB1) is not equal to the third wavelength range (WB3) and the third wavelength range (WB3) is not equal to the second wavelength range (WB2).

The first LED (LED1a) and the second LED (LED1b) and the third LED (LED1c) can, as is often known from the prior art, be controlled by suitable PWM control in such a way that they Light appears white to a human observer. This is very important for many applications, since, for example, the function of a headlight as a headlight (SW) is to make information available to the driver, for example by marking objects in the route in terms of color or lighting amplitude. This information also includes the color information, for example of objects in the route.

Headlight variant 3

The term headlight (SW) is used very broadly in this disclosure. Various headlights that are already known today could be designed in the form as described above.

Headlight variant 3.1

For example, in the case of a vehicle (motor vehicle), it can be a headlight for daytime driving lights, a headlight for low beam, a headlight for high beam, a decorative light, a direction indicator, a warning light, a warning light for a vehicle in the blind spot (typically on the exterior mirror mounted), a brake light, a reversing light, a tail light, a fog light, a rear fog light, a warning light, a signal light, in particular a police or fire service or other emergency vehicle blue light or another yellow warning light with or without rotation and with or without a flashing function , act. However, the list should not be complete, so further applications are conceivable.

Headlight variant 3.2

For example, in the case of a rail vehicle, it can be a driving light, an ornamental light, a warning light, a reversing light, a tail light, a warning light or a signal light. However, the list should not be complete, so further applications are conceivable.

Headlight variant 3.3

For example, in the case of a simple lamp as a headlight (SW), according to the description given above, it can be a street lamp, a searchlight, a stage lamp or a stage spotlight, a signal lamp (e.g. a railway signal lamp), a traffic light (e.g. a traffic light), an emergency light , a workplace lamp, a room lamp or an aisle lamp or a self-illuminating advertising sign. However, the list should not be complete, so that further applications in other lights are expressly conceivable.

Headlight variant 4

In a further variant of the headlight (SW), the previously described headlight is the light source of a projection device. Such a projection device can be, for example, a matrix headlight that amplitude-modulates individual areas of the emitted light cone by means of a segmented LCD display, or a projection device for illuminating buildings and/or streets and/or other areas, for example on the Presence of objects and/or people should be monitored. It may make sense to hide certain areas. This is particularly interesting when objects need to be marked.

Such a projection device preferably has a structurable aperture (LCD). Such a structurable screen (LCD) consists, for example, of a first polarization filter, a first transparent electrode layer with spatially resolved electrodes, a layer of liquid crystals, a second transparent electrode layer with spatially resolved electrodes, the electrodes of the two electrode layers being opposite and the liquid crystal layer lying between these electrodes, and a second polarization filter. The package of electrodes and liquid crystals lies between the polarization filters. The electrodes are electrically insulated, but can be kept energized by controlling the filter. Depending on the voltage between an electrode of the first electrode layer and an electrode of the second electrode layer opposite this, the angle of rotation of the plane of polarization of the light transmitted through the first polarization filter in the layer of liquid crystals changes and thus the transmission of this light through the second polarization filter. If polarized light is already emitted by the light source, for example the first one (LED1), the first polarization filter can also be omitted. This aperture (LCD), which can be structured in its transmission for the light from the light source (LED1), provides represents a two-dimensional surface, which does not necessarily have to be flat. It therefore has spatially resolved and locally adjustable transmission coefficients for the light emitted by the first LED (LED1) for respective two-dimensional partial areas (transparent electrodes) of this two-dimensional area and based on the perpendicular to these respective two-dimensional partial areas. In order to be able to image the light beam with such locally different amplitude modulation, an optics (CL, PL) is required for projecting the light pulse (LP), which is emitted by the light source, for example the first LED (LED1), onto a projection surface or into a projection space necessary inside. The cross section of the light beam leaving the headlight (SW) can then be modulated using the structured aperture (LCD). Individual pixels can also be modulated, which can affect, for example, the color or their temporal modulation (eg flashing). If the cross section of the light beam leaving the headlight (SW) is to be modulated in this way by means of said structured aperture (LCD), it makes sense for the optics (CI, PL) to have at least one condenser lens (CL) or an equivalent mirror device includes. It is also known from the prior art that projection devices can also be implemented using two-dimensional arrays of micromirrors (DLP), ie using micromirrors (DLP) arranged in the form of a two-dimensional grid. If such micromirror arrays (DLP) are in the beam path, they can be used for modulation in the same way. A structured micromirror array (DLP) can therefore also be understood as a structurable diaphragm (LCD) in the sense of this disclosure, which removes or otherwise modulates partial beams of the light beam of the lamp, for example the first LED (LED1), from the beam path by redirecting them in a spatially resolved manner.

The structurable aperture (LCD) can be located in front of, behind and between components of the optics (CL, PL, OP) in the beam path.

The headlight (SW) can then be set up to selectively mark objects (O) in its illuminated area using suitable lighting, while other areas are not marked. For example, it is conceivable to illuminate pedestrians or objects recognized by the system as potentially dangerous in a suitable color, while the rest of the objects in the headlight area are illuminated in white, for example. The headlight (SW) can also be set up to additionally selectively mark such objects (O) in its lighting area by a temporal pattern of lighting, in particular by flashing and/or by lighting in a different color. For example, it is conceivable to illuminate said dangerous objects with a brightness that fluctuates over time in a predetermined pattern, while other objects (O) are illuminated constantly. In this way, for example, oncoming vehicle drivers can be specifically warned. This results in two modulation channels for the light emitted by the headlight: one for vehicle-to-vehicle communication with very short, human-imperceptible light pulses (LP), which should not be visible to the vehicle driver, and one channel for vehicle-to-vehicle communication Vehicle driver with relatively slow color and/or brightness modulations that can be perceived by humans, whereby the driver can be the driver of the vehicle or that of another vehicle.

Headlight variant 5

It is also proposed to install such a headlight (SW) in a vehicle (motor vehicle). All types of vehicles come into question: motor vehicles, trucks, motorcycles, rail vehicles, bicycles, sea vehicles of all kinds such as ships, messengers and submarines, aircraft, space vehicles, special vehicles such as caterpillar tracks and construction vehicles and construction machines, mobile robots, industrial trucks, etc.

The application in motor vehicles is preferably described here. However, the application is not limited to this. The stress also includes other vehicles, e.g. the vehicles mentioned above. Such a proposed vehicle (motor vehicle) includes at least one headlight (SW), as described previously.

Basic procedure

With the help of the headlight (SW) described above, light can now be emitted in particular as a light pulse (LP), which is suitable for use in measuring devices. The basic method involves the emission of a light pulse (LP) or a sequence of light pulses (LPF) by the first LED (LED1). For the purposes of this disclosure, a light pulse (LP) can be both a brief switching on and a brief switching off of the first LED (LED1). In the broadest sense, these are short-term intensity modulations. Positive light pulses can be emitted, so to speak, in which the first LED (LED1) is switched on at a first time (t1) and after is switched off again for a short time at a second time (t2). Negative light pulses (LP) can also be emitted, so to speak, in which the first LED (LED1) is already switched on and then switched off at a first time (t1) and then switched on again after a short time at a second time (t2). becomes. It is also possible for the light emission of the first LED (LED1) to have a positive equivalence to which the light pulses (LP) are applied. For the purposes of this disclosure, a light pulse (LP) is characterized in that the light output of the visible light emitted by the first LED (LED1) increases or decreases from a first light output to a second light output at a first time (t1). returns to the first light output at a second time (t2) following the first time (t1). The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

1. Process variant

Furthermore, a method for emitting light using the previously described headlight (SW) is proposed, in which the first LED (LED1a) of the headlight (SW) emits visible light in a first wavelength range (WB1) and the second LED (LED1b) of the headlight (SW) emits visible light in a second wavelength range (WB2) that is not equal to the first wavelength range (WB1). A light pulse (LP) or a sequence of light pulses (LPF) is then emitted by the first LED (LED1). The distance between the light pulses (LP) can be the same or modulated (=varying). The distances between the light pulses (LP) within the light pulse train (LPF) can encode information. A light pulse (LP) in the sense of this disclosure is characterized in that the light output of the visible light emitted by the first LED (LED1) increases or decreases from a first light output to a second light output at a first time (t1) and at a second , the time (t2) following the first time (t1) returns to the first light output. The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

2. Process variant

In a second variant of the method, a method for emitting light using the previously described headlight (SW) is proposed, in which the first LED (LED1a) of the headlight (SW) emits visible light in a first wavelength range (WB1) (first color). and the second LED (LED1b) of the headlight (SW) emits visible light in a second wavelength range (WB2) (second color) that is not equal to the first wavelength range (WB1). In contrast to the first method variant, it is not the amplitude of a first LED (LED1) that is modulated, but rather the color angle of the radiation from the two LED lamps (LED1a, LED1b). The sum of the light output emitted by the first LED (LED1a) and by the second LED (LED1b) preferably remains the same, only the color angle is changed relative to one another by changing the two light outputs of the first LED (LED1b) and the second LED (LED1b). . The proposed method variant therefore includes the emission of a color angle light pulse (FLP) or a sequence of color angle light pulses (FLPF) by the first LED (LED1a) and the second LED (LED1b). The distance between the color angle light pulses (FLP) can be the same or modulated (=varying). The spacing of the color angle light pulses (FLP) within the color angle light pulse sequence can encode information. A color angle light pulse (FLP) is then characterized in that the light output of the visible light emitted by the first LED (LED1a) changes from a first light output of the first LED (LED1a) to a second light output of the first LED (LED1a) at a first point in time (t1) is enlarged or reduced and at a second time (t2) following the first time (t1) returns to the first light output of the first LED (LED1a) and at the same time and preferably time-synchronously the light output of the visible light emitted by the second LED (LED1b). Light decreases or increases from a first light output of the second LED (LED1b) to a second light output of the second LED (LED1b) at a first time (t1) and at a second time (t2) following the first time (t1). first light output returns. If synchronicity can actually be achieved, it would not be possible to measure a change in intensity, but only a pulsed color change of preferably a few ns. This has the advantage that the light intensity remains the same. The total light output from the sum of the light output of the visible light emitted by the second LED (LED1b) and the visible light emitted by the first LED (LED1a) changes then during the emission of the color angle light pulse (FLP) preferably by no more than 10%. The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

3. Process variant

However, precise synchronicity of the control of the two LEDs, as described in the previous method variant, cannot be achieved either in terms of time or amplitude. Therefore, in reality, a short-term amplitude fluctuation together with a pulse-shaped color fluctuation is more likely to be achieved. A third method variant is therefore proposed, which describes a method for emitting light, in particular combined color/light pulses, using the headlight (SW) described above. The first LED (LED1a) of the headlight (SW) emits visible light in a first wavelength range (WB1) and the second LED (LED1b) of the headlight (SW) emits visible light in a second wavelength range (WB2), which is not the same first wavelength range (WB1). The proposed third method variant includes the emission of a modulated color angle light pulse (MFLP) or a sequence of modulated color angle light pulses (FMLPF) by the first LED (LED1a) and the second LED (LED1b). The spacing of the combined modulated color angle light pulses (FMLP) can be the same or modulated (=varying). The spacing of the modulated color angle light pulses (FMLP) within the color angle light pulse train (FMLPF) can encode information. A modulated color angle light pulse (MFLP) is characterized in that the light output of the visible light emitted by the first LED (LED1a) changes from a first light output of the first LED (LED1a) to a second light output of the first LED (LED1a) at a first time (t1) is enlarged or reduced and returns to the first light output of the first LED (LED1a) at a second time (t2) following the first time (t1) and that the light output of the visible light emitted by the second LED (LED1b) differs from a first light output of the second LED (LED1b) is reduced or increased to a second light output of the second LED (LED1b) at a first time (t1) and returns to the first light power at a second time (t2) following the first time (t1). . The first total light output from the sum of the first light output of the second LED (LED1b) and the first light output of the first LED (LED1a) and the second total light output from the sum of the second light output of the second LED (LED1b) and the second light output of the first LED (LED1a ) now differ, however, at least at a time between the first time (t1) and the second time (t2), preferably by more than 10%. This can be caused, for example, by the light pulses (LP) not starting at exactly the same time or having a different maximum height or a different shape. Since LEDs of different colors can be used, this can easily be possible due to different designs and manufacturing variations. The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

4. Process variant

The previously described process variants and the basic process can also be used for data traffic. A method for transmitting data using light from a previously described headlight (SW) is therefore proposed. The proposed method includes emitting a sequence of light pulses (LP) (light pulse sequence (LPF)) through the first LED (LED1) or a sequence of colored light pulses (colored light pulse sequence (FLPF)), with different time intervals between the light pulses (LP) or Colored light pulses (FLP) and/or the frequency spectrum of the distances between the light pulses (LP) or the colored light pulses (FLP) or the phase position of the light pulses (LP) or the colored light pulses (FLP) to one another, in particular within a light pulse sequence (LPF) or colored light pulse sequence ( FLPF) data information is encoded or data information is encoded by different light pulse amplitudes of the light pulses (LP) or color angle modulation amplitudes of the color light pulse (FLP). In the case of a colored light pulse in the sense of this disclosure, the radiation intensity typically remains essentially constant during the emission of the colored light pulse (FLP). The characterization “essentially” refers to unavoidable deviations from the rules. The total intensity (total light output) of a colored light pulse (FLP) therefore remains constant for the duration of the colored light pulse (FLP) and only the color, for example the color angle, is pulsed. The proposed method also includes receiving the light pulses (LP) or colored light pulses (FLP) in a receiver and decoding the data information contained therein. Since it is about a pulsed data transmission using broadband light pulses (LP) or using broadband colored light pulses (FLP), the spectrum of the light modulation signal that is impressed on the emitted light is very broad. So-called ultra-wide-band algorithms can therefore be used very well, which then reduce the influence of interference signals efficiently and with a high suppression rate. For example, the received signal can be convolved with the prototype of an expected transmit pulse sequence, which highlights components in the received signal that correlate with this expected transmit pulse sequence. It is also possible, for example, to generate a dot product between the received signal and such a prototype signal by multiplying the two signals and subsequent low-pass filtering in order to produce an improved signal-to-noise ratio.

Due to the proposed control, it is therefore possible to reliably separate the light pulses (LP) or colored light pulses (FLP) from the noise background using a spread spectrum method, especially when these light pulses (LP) are received after their reflection as reflected light pulses (RLP). Data can still be transmitted over long distances if photons can travel from the transmitter (LED1) to the receiver (MD). In this fourth method variant, it is proposed that the transmission of data takes place using light from a headlight (SW), as described above. The headlight (SW) is part of a vehicle (motor vehicle). The proposed fourth method variant includes, among other things, the provision of status information of the vehicle (motor vehicle) as data information to be transmitted before the first LED (LED1) emits a sequence of light pulses (LPF). For example, it is conceivable to transmit the direction of travel and speed to the outside using the headlights, for example to vehicles in front, or to use the brake lights to signal braking processes in their intensity together with speed information, for example to following vehicles. Other information can also be exchanged in this way.

As a sub-variant of the method based on this, the state of devices in the transport infrastructure can be changed depending on the received and decoded data information. For example, it is conceivable that control tasks can be controlled as part of smart home applications, such as opening garage doors or switching lights on and off, etc. It is also conceivable that infrastructure or traffic infrastructure devices, such as traffic lights (AMP), are controlled. Particularly preferred is a connection of the vehicle (motor vehicle) to the Internet, whereby the vehicle (motor vehicle) sends data using its headlights (in the sense of this disclosure) (SW) and the traffic infrastructure sends back data, for example via street lights.

As a sub-variant of the method based on this, a change in the state of another vehicle (motor vehicle) can be provided depending on the received and decoded data information. Such a change in state can, for example, influence a device in the other vehicle (motor vehicle), in particular an optical and/or acoustic display, for example for the driver of the second vehicle and/or a change in important state parameters such as speed and direction or shapes of the light beam bundles Be the headlights of the second vehicle.

A method for transmitting data using light from a headlight (SW) is also proposed, the headlight (SW) being part of a lamp. After providing data information to be transmitted before the first LED (LED1) emits a sequence of light pulses (LPF), a sequence of light pulses (LPF) is emitted, the data information to be transmitted being encoded in the sequence of light pulses (LPF). In a further variant, the sequence of light pulses (LPF) is then received by a corresponding device of a second lamp and the data information to be transmitted encoded in the sequence of light pulses (LPF) is decoded in order to obtain the received and decoded data information. The state of the second light or a device connected to it is then changed by its control depending on the received and decoded data information.

In general, a method for data transmission to a headlight (SW) can therefore be proposed, in which the headlight (SW) has at least a first LED (LED1) as a light source, in which the first LED (LED1) is used at least in certain periods of time, the dark times, is not energized and therefore does not light up. During these dark times, the first LED (LED1) can then be used as a receiver (MD). On the one hand, this can be the receiver (MD) of a distance measuring device in cooperation with another headlight (SW) of the proposed type. The method for data transmission then includes the steps of detecting at least one lamp voltage (VLED1) on the at least one LED (LED1). a dark time using an H-bridge control instrument (HCV) to measure the voltage drop (VLED1) across the load (LED1) in the H-bridge (H), i.e. typically via the first light-emitting diode (LED1). The value determined in this way can be amplified and filtered appropriately and then compared with a threshold value (SCHW). If the level of the voltage drop (VLED1) is above the threshold value (SCHW) after suitable filtering, a first logical state can be generated. If the level of the voltage drop (VLED1) is below the threshold value (SCHW), a second logical state can be generated. The time sequence of the first and second logical states can then be used to infer data and/or a data clock underlying this data using an evaluation circuit. In this context, it should be noted that the parasitic capacitances of LEDs for lighting purposes are usually so large that the actual data rates are very small. However, this can be useful for maintenance purposes. A date is generated here depending on the recorded lamp voltage (VLED1).

5. Process variant

A method for determining a distance (d) between an object (O) and a vehicle (motor vehicle) is proposed as a fifth method variant. The fifth method variant proposed here includes the emission of a light pulse (LP) by means of a headlight (SW), as described above, into the exterior of a vehicle (motor vehicle), the reflection of the emitted light pulse (ELP) on an object (O) as a reflected light pulse (RLP) and the reception of the reflected light pulse (RLP) by a receiver (EM), which is part of the vehicle (motor vehicle). This is followed by the determination of the light transit time (TOF) and the conclusion of the distance (d) between the object (O) and the vehicle (motor vehicle) by a calculation device (BV) within the vehicle (motor vehicle). Various light pulse-based techniques from the prior art (e.g EP 2 783 232 B1 ) known. The disclosure presented here focuses on optimizing light pulse generation and the new applications this enables. Instead of emission into the exterior of a motor vehicle, emission into the interior of a motor vehicle using various interior lights, for example for interior monitoring, seat occupancy detection, etc., is also possible. It should also be mentioned that instead of measuring distance, it is also possible to detect aerosols, for example fog. For example, separate optics can evaluate the scattered light from a proposed headlight. In particular, the scattered light of the light pulses (LP) emitted by the proposed headlight then enables the detection of fog situations.

For this purpose, for example, the measuring device (MV, MD) is used 27 mounted at a distance from the proposed headlight (SW). The optics (OP3) of the measuring device (MV, MD) are aligned with their optical axis not parallel to the optical axis of the optics (OP) of the lamp (LED1) so that the optical axis of the optics (OP3) of the measuring device (MV, MD) intersects the optical axis of the optics (OP) of the light source (LED1) at a point spaced from the vehicle. An average distance is then measured. If this falls below a minimum value or if the amplitude of the scattered light pulses (LP) of the proposed headlight (SW), which reach the measuring device (MV, MD) from the optical axis of the optics (OP) of the lamp (LED1) through scattering, is greater than a maximum value, a fog alarm can be triggered.

6. Process variant

As a sixth method variant, a method for determining a distance (d) between an object (O) and a vehicle (motor vehicle) is proposed, in which, in addition to the light travel time of the emitted light pulse (LP), in contrast to method variant 5, the received amplitude is also evaluated and the reflectivity of the reflecting object (O) is also concluded.

It is then, for example, a method for determining a reflectivity of an object (O) in the illumination area of a proposed headlight (SW). The method begins with the emission of a light pulse (LP) into the exterior of a vehicle (motor vehicle) using a proposed light-pulse capable headlight (SW). After the reflection of the emitted light pulse (ELP) on the object (O) as a reflected light pulse (RLP), the reflected light pulse (RLP) is received by a receiver (EM), which is part of the vehicle (motor vehicle) and the final determination of the Reflectivity (REF) of the object (O) by a calculation device (BV) within the vehicle (motor vehicle). Since distance measurement is possible in this way, the distances (d) determined in this way can be further processed.

This reflectivity can also be determined spectrally selectively. In this case it is a method for determining a spectral-selective reflectivity of an object (O) in the illumination area of a headlight (SW). The process now begins with the emission of a colored light pulse (FLP). of a proposed color light pulse-capable headlight (SW) in the exterior of a vehicle (motor vehicle). The emitted colored light pulse is composed of a first partial light pulse of a first color and a second partial light pulse of a second color, which were typically emitted by a first LED (LED1a) and a second LED (LED1b). The total intensity (total light output) of the partial light pulses preferably remains essentially constant for the duration of the colored light pulse (FLP). Essentially only the color, for example the color angle, is preferably pulsed. After the reflection of the emitted colored light pulse (FLP) on the object (O) as a reflected colored light pulse (RELP), a first reflected partial light pulse as a reflection of the first partial light pulse and a second reflected partial light pulse as a reflection of the second partial light pulse run back to the vehicle. When reflected on the object, the first partial light pulse and the second partial light pulse were reflected to different degrees due to their different colors, because the reflectivity of the object is different for these colors. The object is typically colored. This is followed by the reception of the reflected colored light pulse (RFLP) as a composition of these reflected partial light pulses by a receiver (EM), which is part of the vehicle (motor vehicle), and the determination of the spectral reflectivity (SREF) of the object (O) from the reflectivities of the partial light pulse measurements a calculation device (BV) within the vehicle (motor vehicle).

7. Process variant

In a seventh method variant, a method for determining a two-dimensional environment map (UK) for a vehicle (motor vehicle) is proposed. This includes determining a first distance (d1) to an object (O) using a first headlight (SW1) according to the 5th or 6th method variant and determining a second distance (d2) to an object (O) using a second headlight (SW2) corresponding to the 5th or 6th process variant. The environment map (UK) can contain reflectivities and distances. If more than one color is emitted in pulses, the environmental map can also include spectral values. This is followed by the calculation of a two-dimensional position according to the coordinate system of the environment map (UK) of the vehicle (motor vehicle) by coordinate transformation from the first distance (d1) and the second distance (d2). If further parameters are desired (e.g. reflection, if necessary split into different colors), these are also calculated here.

8. Process variant

In an eighth method variant, a method for determining a three-dimensional environment map (UK) for a vehicle (motor vehicle) is therefore proposed. It includes determining a first distance (d1) to an object (O) using a first headlight (SW1) according to the 5th method variant and determining a second distance (d2) to an object (O) using a second headlight (SW2) according to the 5th method variant and determining a third distance (d2) to an object (O) by means of a third headlight (SW3) according to the 5th method variant. In order to create a three-dimensional environmental map, the first headlight (SW1) and the second headlight (SW2) and the third headlight (SW3) should not be on the same line. The environment map (UK) can contain reflectivities and distances. If more than one color is emitted in pulses, the environment map (UK) can also include spectral values. This is followed by the calculation of a three-dimensional position according to the coordinate system of the three-dimensional environment map (UK) of the vehicle (motor vehicle) by coordinate transformation from the first distance (d1) and the second distance (d2) and the third distance (d3). If further parameters are desired (e.g. reflection, if necessary split into different colors), these are also calculated here.

The data from such an environmental map can be used, for example, to determine the distance between the vehicle (motor vehicle) and a roadway (FB) based on several determined three-dimensional positions within the environmental map (UK).

Of course, other vehicles may also be part of such an environment map (UK). A distance between the vehicle (vehicle 1) and another vehicle (vehicle 2) can therefore also be determined based on several determined three-dimensional positions within the surroundings map (UK).

The proposed principle can also be used to build a camera in which not only brightness information but also distance information is determined for each pixel. Such cameras are referred to below as TOF camera systems. Similar TOF camera systems are known from the prior art, for example DE 10 2008 018 718 B4 and the DE 10 2009 020 218 B3 and the writings that quote them forwards and backwards. Such a TOF camera system includes camera optics (OP3) that creates an image based on the wave of the returning reflected light pulse (LP). generated. The heart of such a TOF camera system is an image sensor that can be switched to be light-sensitive or light-insensitive for short periods of time by the control unit (ST) using a synchronization signal (sync). This image sensor is typically designed as a two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG). A measuring device (MV) evaluates the signals from the two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG) and generates a brightness and a transit time image from the determined data. It is proposed to combine the device described above with the proposed headlight (SW) and thus achieve a greater range than possible in the prior art. The proposed TOF camera system therefore includes at least a first LED (LED1) as a light source. The headlight (SW) of the TOF camera system can include additional lighting devices, for example to be able to emit light for lighting purposes. However, it is preferably the RGB spotlight (SW) already described, which can therefore be designed to be light and color pulse-capable. Can. In order to achieve greater range, the headlight (SW) emits light in an emitted wavelength range (AWB) in the visible wavelength range. This allows the eyelid reflex to be used and the radiation output and thus the range can be increased. The headlight (SW) of the TOF camera system is then preferably light-pulsable in at least one visible wavelength range, the light-pulse-capable wavelength range (LPWB). The light pulseable wavelength range (LPWB) is preferably again a sub-range of the emitted wavelength range (AWB) of the headlight (SW) or equal to the emitted wavelength range (AWB) of the headlight (SW). Of course, the headlight can also emit additional light in areas other than the visible wavelength range. This also applies to the entire disclosure. However, this will not be discussed further here. The first LED (LED1) can emit light in this light-pulse-capable wavelength range (LPWB). A control device (ST) controls the light sensitivity of the controllable light-sensitive sensors (TOFIMG) of the two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG) and the emission of light pulses (LP) by the first lamp (LED1) in order to measure the light transit time on this basis using the two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG). At the same time, the headlight (SW) can emit light for lighting purposes. The first light source (LED1) is preferably controlled using the proposed H-bridge (H) for controlling and supplying the first LED (LED1) with electrical energy. The H-bridge (H) is preferably controlled by the control device (ST). The TOF camera system preferably has an optically blocking bandpass filter (F1), the wavelength range blocked by the optical bandpass filter (F1) being in the visible emitted wavelength range (AWB) of the headlight (SW). The proposed TOF camera system can preferably have at least a second LED (LED2) as a further illuminant of the headlight (SW), which emits visible light (SL) at least in the non-blocked wavelength range (NGWB) of the emitted wavelength range (AWB) of the headlight (SW ) is emitted through the optically blocking bandpass filter (F1) and the first LED (LED1) emits light in the wavelength range (GWB) blocked by the optically blocking bandpass filter (F1) without this light from the first LED (LED1) passing through the optically blocking bandpass filter (F1 ) has to happen.

It is now advantageous to install such a TOF camera system in a vehicle (motor vehicle).

The headlight (SW) of the TOF camera system is particularly preferably an RGB headlight. The headlight (SW) of the TOF camera system then has at least a first LED (LED1), which shines in a first wavelength range (WB1), and at least one second LED (LED2), which shines in a second wavelength range (WB2). radiates, and at least one third LED (LEDS) that radiates in a third wavelength range (WB3). As before, the first wavelength range (WB1) and the second wavelength range (WB2) and the third wavelength range (WB3) are each a sub-range of the emitted wavelength range (AWB) of the headlight (SW) of the TOF camera system. The first wavelength range (WB1) is not equal to the second wavelength range (WB2) and the first wavelength range (WB1) is not equal to the third wavelength range (WB3) and the third wavelength range (WB3) is not equal to the second wavelength range (WB2). The control device (ST) can now preferably control the first LED (LED1) and the second LED (LED2) and the third LED (LED3) in such a way that their light appears white to a human observer.

Of course, a headlight (SW) of such a TOF camera system can also only have two LEDs. As a rule, however, a white light impression can no longer be achieved. The advantage of a TOF camera system with at least two different colored LEDs is that the first LED (LED1) and the second LED (LED2) can be controlled in such a way that the headlight (SW) of the TOF camera system is used to emit color angle pulses (FLP). This allows runtime images not to be included Dependence on light transit times of the amplitude, but rather on light transit times of a color angle pulse (FLP), which represents a completely different method than the methods known in the prior art. It is therefore particularly advantageous if the determination of the distance information uses the transit time of a color angle pulse. (And possibly not an amplitude pulse.

It is particularly advantageous if certain areas recognized as critical (e.g. oncoming vehicles) can be protected from the light pulses (LP) and colored light pulses (FLP) under certain conditions. For this it is necessary to be able to operate the headlight (SW) of the TOF camera system as a projection device, for example using an LCD shadow mask to hide the areas to be protected. For this purpose, the TOF camera system preferably again has a structurable aperture (LCD), which preferably represents a two-dimensional surface, which has spatially resolved and locally adjustable transmission coefficients for the light emitted by the first LED (LED1a) and possibly second LED (1b). for respective two-dimensional partial surfaces of this two-dimensional surface and based on the perpendicular to these respective two-dimensional partial surfaces. In addition, projection optics (CL, PL) are then necessary for projecting the light pulse (LP) or colored light pulse (FLP) onto a projection surface or into a projection space.

In contrast to the prior art, the proposed TOF camera system is intended to also work as an illumination device. In this sense, it makes sense if the TOF camera system is set up to selectively mark objects in their illuminated area, for example by using the shadow mask in question. This marking can also be time-modulated. The TOF camera system is therefore preferably set up to selectively mark objects in their illuminated area by a temporal pattern of illumination, in particular by flashing and/or by illumination of a different color.

List of characters

• 1 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the light source, the first LED (LED1).
• 2 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a positive charge pump (LPPB) and a negative charge pump (LPMB) for sucking out the stored charge carriers.
• 3 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a positive charge pump (LPPB) and a negative charge pump (LPMB) for sucking out the stored charge carriers and with a positive charge pump (LPPA) and a negative charge pump (LPMA) to generate a short switch-on edge.
• 4 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a pair of a positive charge pump (LPPA) and a negative charge pump (LPMA) to generate a short switch-on edge.
• 5 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a positive charge pump (LPPA) to generate a short switch-on edge.
• 6 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a negative charge pump (LPMA) to generate a short switch-on edge.
• 7 shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the light source, the first LED (LED1), with a negative charge pump (LPMB) for sucking out the stored charge carriers.
• 8th shows schematically a device in the form of a first exemplary H-bridge (H), which drives or switches off the lamp, the first LED (LED1), with a positive charge pump (LPPB) for sucking out the stored charge carriers.
• 9 shows schematically how a transition from one operating state of the first H-bridge (H) to the next operating state of the first H-bridge (H) is possible.
• 10 shows the current curve in the proposed pulsation method (a) and in alternative control techniques (b, c) from the prior art.
• 11 shows the current curve for the proposed pulsation method (and the voltage curve at the first light-emitting diode (LED1)).
• 12 equals to 3 with the difference that an H-bridge control instrument (HCV) is also provided for measuring the voltage drop across the load in the first H-bridge (H), i.e. typically the lamp voltage (VLED1) across the first light-emitting diode (LED1). To be able to check the functionality of the control by the first H-bridge (H) and the first LED (LED1) of the H-bridge (H) during operation.
• 13 equals to 12 with the difference that a first H-bridge control instrument (HCI1) is provided for measuring the current through the first switching element of the H-bridge, i.e. typically through the first transistor (T1), here by detecting the voltage drop across the first transistor (T1). is and a second H-bridge control instrument (HCI2) is provided for measuring the current through the second switching element of the H-bridge, i.e. typically through the second transistor (T2), here by detecting the voltage drop across the second transistor (T2), and a fourth H-bridge control instrument (HCI3) for measuring the current through the third switching element of the H-bridge, i.e. typically through the third transistor (T3), here by detecting the voltage drop across the third transistor (T3), and a fourth H-bridge Bridge control instrument (HCI4) for measuring the current through the fourth switching element of the H-bridge, i.e. typically through the fourth transistor (T4), here by detecting the voltage drop across the fourth transistor (T4) and to check the functionality of the control by the to be able to control the first H-bridge (H) and the first LED (LED1) of the H-bridge (H) during operation, in particular by drawing conclusions about the current flowing.
• 14 shows how 9 schematically shows how a transition from one operating state to the next operating state is possible. However, it is now assumed that when changing from the “PAn” state to the “PAn” state, a different cross current is desired than when changing from the “PAn” state to the “PAn” state. (See also description of 12 .)
• 15 shows a proposed headlight system in a schematically simplified and functionally symbolic manner, whereby the lamp, the first LED (LED1), can be used both in pulsed operation (QDB) and as a lamp for quasi-continuous lighting (QDB).
• 16 shows an exemplary modified H-bridge (H) for use in a device according to. 15 and in modification of the 3 . In contrast to the H-bridge (H) the 3 can be the H-bridge (H). 16 and the first LED (LED1) can now be used both for the emission of optimized light pulses (LP) and for the optimized light emission for lighting purposes by switching between charge pumps (LPPA, LPPB, LPMA, LPMB) based energy supply and direct energy supply from the supply voltage sources (VCC1 , VCC2, VCC3, GND1, GND2) can be switched.
• 17 equals to 16 with the difference that the charge pumps (LPPB, LPPA, LPMA, LPMB) are supplied from a fifth positive supply voltage (VCC5) and a fifth negative supply voltage (GND5) and for operation as a lamp in a lighting device, the supply is supplied directly from a sixth supply voltage source ( VCC6) and a sixth negative supply voltage (GND6), with both the fifth positive supply voltage (VCC5) and the sixth positive supply voltage (VCC6) as well as the fifth negative supply voltage (GND5) and the sixth negative supply voltage (GND6) being preferred outputs a regulated voltage source.
• 18 shows an exemplary modified H-bridge (H) for use in a device according to. 15 and in modification of the 3 . In contrast to the H-bridge 3 can be the H-bridge (H). 18 and the first LED (LED1) can now be used both for the emission of optimized light pulses (LP) and for the optimized light emission for lighting purposes, by now using two analog multiplexers between the direct energy supply from a third positive supply voltage source (VCC3) and a fourth positive supply voltage source (VCC4) for the quasi-continuous operation (QDB) of the first LED (LED1) as a lamp of a lighting device on the one hand and the direct energy supply from a first positive supply voltage source (VCC1) and a second positive supply voltage source (VCC2) for pulsed operation (GPB) as a pulsed LED (LED1) on the other hand can be switched.
• 19 shows the simplest variant with a supply from a common voltage source with a positive basic supply voltage (VCC), which can be, for example, the voltage supply from the board network of a motor vehicle. The supply in pulsed Operation (GPB) takes place via a common second positive supply voltage (VCC2) and the common negative basic supply voltage (GND). In quasi-continuous operation (QDB), the first light-emitting diode (LED1) is supplied with energy via the third positive supply voltage (VCC3) and the common negative basic supply voltage (GND).
• 20 equals to 19 with the difference that the eighth transistor (T8) has been omitted. The analog multiplexer for switching the supply voltage between the second supply voltage (VCC2) and the third supply voltage (VCC3) is therefore no longer as in 19 placed on the H-bridge (H), but became part of the H-bridge (H) by arranging the twelfth transistor (T12) in parallel with the third transistor (T3). The supply in pulsed operation (GPB) takes place via a common second positive supply voltage (VCC2) and the common negative basic supply voltage (GND). In quasi-continuous operation (QDB), the first light-emitting diode (LED1) is supplied with energy via the third positive supply voltage (VCC3) and the common negative basic supply voltage (GND).
• 21 shows a particularly simple variant of the proposed device. The light source, the first LED (LED1), is supplied with electrical energy by means of an H-bridge (H) made up of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4).
• 22 corresponds to the state diagram of the 9 , but the state diagram is now for the operation of the exemplary modified H-bridge (H). 16 and 21 was modified.
• 23 equals to 20 with the difference that two shunt resistors, a first shunt resistor (Rs1) and a second shunt resistor (Rs2) are shown here. These shunt resistors (Rsl, Rs2) can be used to determine the current through the relevant half bridge (HB1, HB2) of the H-bridge (H) by means of the voltage drop across these shunt resistors (Rsl, Rs2).
• 24 equals to 15 with the exemplary difference that an internal construction of the H-bridge, for example 15 corresponds and where the energy reserves (C_LPPB, C_LPPA, C_LPMB, C_LPMA) of the charge pumps (LPPB, LPPA, LPMB, LPMA) are shown as examples. Instead of charge pumps (LPPB, LPPA, LPMB, LPMA), voltage converters (SVPB, SVPA, SVMB, SVMA) can also be used. In this case, the energy reserves can also be inductors (L_SVPB, L_SVPA, L_SVMB, L_SVMA) or similar.
• 25 equals to 14 with the exemplary difference that, for example, a first H-bridge control unit (HC1) is provided, which measures the light emission of the light source, here the exemplary first LED (LED1), by means of a light-sensitive sensor, here for example a first photodiode (PD1). and so a readjustment of the control in particular by adjusting the charge pump voltage of the charge pumps (LPPB, LPPA, LPMB, LPMA) in the form of the output voltage of the energy reserves (C_LPPB, C_LPPA, C_LPMB, C_LPMA) of the charge pumps (LPPB, LPPA, LPMB, LPMA) and through Variation of the dwell times in the states “PAn”, “PAus” and “PZ” is possible.
• 26 equals to 25 with the exemplary difference that, for example, further lamps (LED2...n) are provided which emit light in an unpulsed manner for lighting purposes, with a wavelength range, the blocked wavelength range (GWB), being masked out by a filter (F1).
• 27 26 equals to 26 , whereby for clarification a measuring device (MV) is now shown, which allows, for example, a determination of the light transit time or other information from the reflected light pulses (RLP).
• 28 equals to 27 with the difference that a compensation transmitter (K) is now provided, which is controlled in a complementary manner to the first LED (LED1), whereby the regulation of the amplitude and the phase position of the control of the compensation diode (K) ensures a more or less uniform illumination of the photodiode over time (MD) is achieved.
• 29 equals to 15 with the exemplary difference that, for example, a first LED (LED1a), which is controlled by an exemplary first H-bridge (H), and a second LED (LED1b), which is controlled by an exemplary second H-bridge (H '). , are provided, which opens up the possibility of emitting colored light pulses (FLP).
• 30 equals to 15 with the exemplary difference that it is a proposed RGB spotlight (SW) and that, for example, a first LED (LED1a), which is controlled by an exemplary first H-bridge (H), and a second LED (LED1b), which through an example A second H-bridge (H') is controlled, and a third LED (LED1c), which is controlled by an exemplary third H-bridge (H''), is provided, which enables the emission of colored light pulses (FLP) and the simultaneous emission of RGB color-determined light, for example white light, for lighting purposes in the entire RGB color space.
• 31 equals to 25 with the exemplary difference that an exemplary, structurable filter, here in the form of an LCD filter (LCD), is inserted into the beam path, for example within the optics (CL, PL), and is projected.
• 32 equals to 25 with the exemplary difference that an exemplary micromirror array (DLP), here in the form of an LCD filter, is inserted into the beam path and modulates the light beam cross section spatially and/or temporally.
• 33 equals to 25 with the exemplary difference that an exemplary structurable filter (F1), here in the form of an LCD filter (LCD), is inserted into the beam path, for example behind the optics (OP), and is projected as a shadow mask.
• 34 shows exemplary positions of devices according to this proposal on an exemplary motor vehicle (motor vehicle) in the form of an exemplary car.
• 35 shows an exemplary communication between a vehicle (motor vehicle) that is equipped with a proposed headlight (SW) and a device in the traffic infrastructure, here an example of a traffic light (AMP).
• 36 shows an exemplary communication between a first vehicle (vehicle) and a second vehicle (vehicle 2), each of which is equipped with a proposed headlight (SW), whereby these headlights (SW) a) the distances to one another a1) active and a2) determine passively and b) exchange data.
• 37 shows the H-bridge of 1 , where the first positive supply voltage (VCC1) of the H-bridge is 1 and the second positive supply voltage (VCC2) of the H-bridge 1 here are equal to the positive total supply voltage (VCC) and where the first negative supply voltage (GND1) of the H-bridge is 1 and the second negative supply voltage (GND2) of the H-bridge 1 here are equal to the negative total supply voltage (GND).
• 38 shows the actual H-bridge (H) with the first half-bridge (HB1) from the series connection of the first transistor (T1) and the series connection of the second transistor (T2) as well as with the second half-bridge (HB2) from the series connection of the third transistor (T3 ) and the series connection of the fourth transistor (T4).
• 39 equals to 27 with the difference that instead of a single sensor (MD), a two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG) is now used for the detection of the light pulses (LP) or colored light pulses (FLP).

Description of the characters

Figure 1

1 shows schematically a device according to the previously described proposal for an H-bridge. The drawing shows four transistors (T1, T2, T3, T4), each transistor having three terminals. The first transistor (T1) has a first connection (1) and a second connection (2) as well as a first control connection (G1). The second transistor (T2) has a third connection (3) and a fourth connection (4) as well as a second control connection (G2). The third transistor (T3) has a fifth connection (5) and a sixth connection (6) as well as a third control connection (G3). The fourth transistor (T4) has a seventh connection (7) and an eighth connection (8) as well as a fourth control connection (G4). Each control port (G1, G2, G3, G4) is connected to the control element (ST). The control element (ST) controls the logical states of the control connections (G1, G2, G3, G4). Each control connection (G1, G2, G3, G4) can be in either a first or a second logical state. Due to the logical state of the control connection (G1, G2, G3, G4), the transistor (T1, T2, T3, T4) assumes either a first or a second operating state. In a first “POff” overall state, either the first control connection (G1) and the fourth control connection (G4) should be in a first logical state and the second control connection (G2) and the third control connection (G3) should be in a second logical state and thus the first transistor (T1) and fourth transistor (T4) in a first operating state in which they conduct, and the second transistor (T2) and third transistor (T3) in a second operating state in which they block, or the second Control connection (G2) and the third control connection (G3) are in a first logical state and the first control connection (G1) and the fourth control connection (G4) are in a second logical state and thus the second transistor (T2) and third transistor ( T3) in a first operating state in which they conduct, and the first transistor (T1) and fourth transistor (T4) in a second operating state in which they block. This is the overall “PAn” state. All control connections (G1, G2, G3, G4) can also be in a second logical state, whereby all transistors (T1, T2, T3, T4) are in a second operating state in which they are blocked. This is the overall “PZ” state. The LED (LED1) has a cathode (K) and an anode (A). The cathode is connected to the second connection (2) of the first transistor (T1) and to the third connection (3) of the second transistor (T2). The anode is connected to the sixth terminal (6) of the third transistor (T3) and to the seventh terminal (7) of the fourth transistor (T4). The LED (LED1) lights up when the first control connection (G1) and the fourth control connection (G4) are in a first logical state and the third control connection (G3) is in a second logical state. If the second control connection (G2) and the third control connection (G3) are in a first logical state and the first control connection (G1) and the fourth control connection (G4) are in a second logical state, the barrier layer of the LED (LED1) is through the polarity reversal cleared up. The 1 also shows a first positive supply voltage (VCC1) and a second positive supply voltage (VCC2) and a first negative supply voltage (GND1) and a second negative supply voltage (GND2).

The first positive supply voltage (VCC1) is connected to the first connection (1) of the first transistor (T1).

The second positive supply voltage (VCC2) is connected to the fifth connection (2) of the third transistor (T2).

The first negative supply voltage (GND1) is connected to the fourth connection (4) of the second transistor (T2).

The second negative supply voltage (GND2) is connected to the eighth connection (8) of the fourth transistor (T4).

Figure 2

2 shows schematically a device accordingly 3 but now with a positive and a negative charge pump.

The positive charge pump (LPPB) for quickly extracting the stored charge carriers is connected via its tenth connection (10) to the first connection (1) of the first transistor (T1). The positive charge pump (LPPB) for quickly extracting the stored charge carriers is also connected to a reference potential via its ninth connection (9). Here in the drawing the positive total supply voltage (VCC) is used as the reference potential of the positive charge pump (LPPB) for quickly extracting the stored ones Load carriers shown. The negative charge pump (LPMB) for quickly extracting the stored charge carriers is connected via its twelfth connection (12) to the eighth connection (8) of the fourth transistor (T4). The negative charge pump (LPMB) for quickly extracting the stored charge carriers is also connected to a reference potential via its eleventh connection (11); here in the drawing the negative total supply voltage (GND) is shown as the reference potential of the negative charge pump (LPMB). The barrier layer of the LED (LED1) is cleared more quickly because the potential of the tenth connection (10) of the positive charge pump (LPPB) for quickly sucking out the stored charge carriers is above the potential of the twelfth connection (12) of the negative charge pump (LPMB). and in that the voltage potential of the tenth connection (10) of the positive charge pump (LPPB) for quickly sucking out the stored charge carriers is higher than that of the positive total supply voltage (VCC) and the voltage potential of the twelfth connection (12) of the negative charge pump (LPMB) is higher rapid extraction of the stored charge carriers is lower than that of the negative total supply voltage (GND). All other sub-devices and processes run analogously 1 away.

Figure 3

3 shows schematically a device accordingly 1 , but now with a pair of a positive and a negative charge pump to suck out the stored charge carriers and to generate a short switch-on edge.

The positive charge pump (LPPB) for quickly extracting the stored charge carriers is connected via its tenth connection (10) to the first connection (1) of the first transistor (T1). The positive charge pump (LPPB) for quickly extracting the stored charge carriers is also connected to a reference potential via its ninth connection (9). Here in the drawing the positive total supply voltage (VCC) is used as the reference potential of the positive charge pump (LPPB) for quickly extracting the stored ones Load carriers shown.

The negative charge pump (LPMB) for quickly extracting the stored charge carriers is connected via its twelfth connection (12) to the eighth connection (8) of the fourth transistor (T4). The negative charge pump (LPMB) for quickly extracting the stored charge carriers is also connected to a reference potential via its eleventh connection (11); here in the drawing the negative total supply voltage (GND) is used as the reference potential of the negative charge pump (LPMB) for quickly extracting the stored ones Load carriers shown.

The positive charge pump (LPPA) for generating a short switch-on edge is connected via its fourteenth connection (14) to the fifth connection (5) of the third transistor (T3). The positive charge pump (LPPA) for generating a short switch-on edge is also connected to a reference potential via its thirteenth connection (13); here in the drawing the positive total supply voltage (VCC) is shown as the reference potential of the positive charge pump (LPPA) for generating a short switch-on edge .

The negative charge pump (LPMA) for generating a short switch-on edge is connected via its fifteenth connection (15) to the fourth connection (4) of the second transistor (T2). The negative charge pump (LPMA) for generating a short switch-on edge is also connected to a reference potential via its sixteenth connection (16); here in the drawing the negative total supply voltage (GND) is shown as the reference potential of the negative charge pump (LPMA) for generating a short switch-on edge .

The barrier layer of the LED (LED1) is cleared of remaining charge carriers more quickly when the LED (LED1) is switched off, so that the potential of the tenth connection (10) of the positive charge pump (LPPB) for quickly sucking out the stored charge carriers is above the potential of the twelfth connection (12) of the negative charge pump (LPMB) for quickly sucking out the stored charge carriers and in that the voltage potential of the tenth connection (10) of the positive charge pump (LPPB) for quickly sucking out the stored charge carriers is higher than that of the positive total supply voltage (VCC) and the voltage potential of the twelfth connection (12) of the negative charge pump (LPMB) for quickly sucking out the stored charge carriers is lower than that of the negative supply voltage (GND).

The junction of the LED (LED1) is flooded with charge carriers more quickly when the LED (LED1) is switched on, thereby increasing the potential of the fourteenth connection (14) of the positive charge pump (LPPA) to generate a short switch-on edge above the potential of the fifteenth connection (15 ) of the negative charge pump (LPMA) for generating a short switch-on edge and in that the voltage potential of the fourteenth connection (14) of the positive charge pump (LPPA) for generating a short switch-on edge is higher than that of the positive supply voltage (VCC) and the voltage potential of the fifteenth connection (15) of the negative charge pump (LPMA) to generate a short switch-on edge is lower than that of the negative total supply voltage (GND).

All other sub-devices and processes run analogously 1 away.

Figure 4

4 shows schematically a device accordingly 1 , but now with a pair of a positive and a negative charge pump to generate a short switch-on edge.

The positive charge pump (LPPA) for generating a short switch-on edge is connected via its fourteenth connection (14) to the fifth connection (5) of the third transistor (T3). The positive charge pump (LPPA) for generating a short switch-on edge is also connected to a reference potential via its thirteenth connection (13); here in the drawing the positive total supply voltage (VCC) is shown as the reference potential of the positive charge pump (LPPA) for generating a short switch-on edge .

The negative charge pump (LPMA) for generating a short switch-on edge is connected via its fifteenth connection (15) to the fourth connection (4) of the second transistor (T2). The negative charge pump (LPMA) for generating a short switch-on edge is also connected to a reference potential via its sixteenth connection (16); here in the drawing the negative total supply voltage (GND) is shown as the reference potential of the negative charge pump (LPMA) for generating a short switch-on edge .

The barrier layer of the LED (LED1) is flooded with charge carriers more quickly when the LED )LED1) is switched on, thereby increasing the potential of the fourteenth connection (14) of the positive charge pump (LPPA) to generate a short switch-on edge above the potential of the fifteenth connection (15 ) of the negative charge pump (LPMA) for generating a short switch-on edge and in that the voltage potential of the fourteenth connection (14) of the positive charge pump (LPPA) for generating a short switch-on edge is higher than that of the positive total supply voltage (VCC) and the voltage potential of the fifteenth connection (15) of the negative charge pump (LPMA) to generate a short switch-on edge is lower than that of the negative total supply voltage (GND).

All other sub-devices and processes run analogously 1 away.

Figure 5

5 shows schematically a device accordingly 1 , but now with a positive charge pump to generate a short switch-on edge.

The positive charge pump (LPPA) for generating a short switch-on edge is connected via its fourteenth connection (14) to the fifth connection (5) of the third transistor (T3). The positive charge pump (LPPA) for generating a short switch-on edge is also connected to a reference potential via its thirteenth connection (13); here in the drawing the positive total supply voltage (VCC) is shown as the reference potential of the positive charge pump (LPPA) for generating a short switch-on edge .

The junction of the LED (LED1) is flooded with charge carriers more quickly when the LED (LED1) is switched on, thereby increasing the potential of the fourteenth connection (14) of the positive charge pump (LPPA) to generate a short switch-on edge above the potential of the negative supply voltage (GND ) and in that the voltage potential of the fourteenth connection (14) of the positive charge pump (LPPA) for generating a short switch-on edge is higher than that of the positive total supply voltage (VCC).

All other sub-devices and processes run analogously 1 away.

Figure 6

6 shows schematically a device accordingly 1 , but now with a negative charge pump to generate a short switch-on edge.

The negative charge pump (LPMA) for generating a short switch-on edge is connected via its fifteenth connection (15) to the fourth connection (4) of the second transistor (T2). The negative charge pump (LPMA) for generating a short switch-on edge is also connected to a reference potential via its sixteenth connection (16); here in the drawing the negative supply voltage (GND) is shown as the reference potential of the negative charge pump (LPMA) for generating a short switch-on edge .

The junction of the LED (LED1) is flooded with charge carriers more quickly when the LED (LED1) is switched on, thereby increasing the potential of the positive total supply voltage (VCC) above the potential of the fifteenth terminal (15) of the negative charge pump (LPMA) to generate a short Switch-on edge is located and in that the voltage potential of the fifteenth connection (15) of the negative charge pump (LPMA) for generating a short switch-on edge is lower than that of the negative total supply voltage (GND).

All other sub-devices and processes run analogously 1 away.

Figure 7

7 shows schematically a device accordingly 1 , but now with a negative charge pump to suck out the stored charge carriers.

The negative charge pump (LPMB) for quickly extracting the stored charge carriers is connected via its twelfth connection (12) to the eighth connection (8) of the fourth transistor (T4). The negative charge pump (LPMB) for quickly extracting the stored charge carriers is also connected to a reference potential via its eleventh connection (11); here in the drawing the negative supply voltage (GND) is used as the reference potential of the negative charge pump (LPMB) for quickly extracting the stored ones Load carriers shown.

The barrier layer of the LED (LED1) is cleared of remaining charge carriers more quickly when the LED is switched off, so that the potential of the positive total supply voltage (VCC) is above the potential of the twelfth connection (12) of the negative charge pump (LPMB) for quickly sucking out the stored charge carriers and the voltage potential of the twelfth connection (12) of the negative charge pump (LPMB) for quickly extracting the stored charge carriers is lower than that of the negative overall supply voltage (GND).

All other sub-devices and processes run analogously 1 away.

Figure 8

8th shows schematically a device accordingly 1 , but now with a positive charge pump to suck out the stored charge carriers.

The positive charge pump (LPPB) for quickly extracting the stored charge carriers is connected via its tenth connection (10) to the first connection (1) of the first transistor (T1). The positive charge pump (LPPB) for quickly extracting the stored charge carriers is also connected to a reference potential via its ninth connection (9). Here in the drawing the positive total supply voltage (VCC) is used as the reference potential of the positive charge pump (LPPB) for quickly extracting the stored ones Load carriers shown.

The barrier layer of the LED (LED1) is cleared of remaining charge carriers more quickly when the LED (LED1) is switched off, which means that the potential of the tenth connection (10) of the positive charge pump (LPPB) is used to quickly suck out the stored charge carriers above the negative supply voltage (GND ) and in that the voltage potential of the tenth connection (10) of the positive charge pump (LPPB) for quickly sucking out the stored charge carriers is higher than that of the positive total supply voltage (VCC).

All other sub-devices and processes run analogously 1 away.

Figure 9

9 shows schematically how a transition from one operating state to the next operating state is possible. The figure shows that only a change from the “POff” state of the H-bridge (H) (=LED is electrically biased in the reverse direction) to the “PZ” state (=there is no defined voltage on the LED) is preferred. the H-bridge (H) or a change from the “PAn” state (=LED is electrically biased in the flow direction) of the H-bridge (H) to the “PZ” state (=there is no defined voltage on the LED ) of the H-bridge (H) and vice versa is possible.

The “PZ” state describes the first overall state of the device, with all control connections (G1, G2, G3, G4) being in a second logical state in the first overall state. This means that all transistors (T1, T2, T3, T4) are in their second operating state (blocked). The LED (LED1) does not emit any light.

The “PAn” state describes the second overall state of the device, wherein in the second overall state the second control connection (G2) and the third control connection (G3) are in a first logical state and thus the second transistor (T2) and the third Transistor (T3) is in the first operating state (conducting). The first control connection (G1) and the fourth control connection (G4) are in a second logical state and thus the first transistor (T1) and the fourth transistor (T4) are in the second operating state (blocked). The LED (LED1) emits light and is electrically biased in the direction of flow.

The “POff” state describes the third overall state of the device, wherein in a third overall state the second control connection (G2) and the third control connection (G3) are in a second logical state and thus the second transistor (T2) and the third Transistor (T3) is in the second operating state (blocked). The first control connection (G1) and the fourth control connection (G4) are in a first logical state and thus the first transistor (T1) and the fourth transistor (T4) are in a first operating state (conducting). The LED (LED1) does not emit any light and is electrically biased in the reverse direction.

The 9 shows the at least permissible overall states “PAn”, “PZ” and “PAus” of the H-bridge (H) as a state diagram. In order to avoid a short circuit with an uncontrollable cross current in the branches (T1, T2 / T3, T4) of the H-bridge (H), you should first change from the first overall state of the H-bridge (H), the “POff” state , to the third overall state of the H-bridge (H), the “PZ” state or vice versa, and/or a change from the second overall state of the H-bridge (H), the “PAn” state, to the third overall state the H-bridge (H), the “PZ” state or vice versa.

This reliably prevents the feared cross current from occurring across the first transistor (T1) of the H-bridge (H) and the second transistor (T2) of the H-bridge (H), which the negative charge pump (LPMA) generates a quick switch-on edge short-circuits the positive charge pump (LPPB) for quickly extracting the stored charge carriers and thus uses up their energy reserves.

This also reliably prevents the feared cross current from occurring via the third transistor (T3) of the H-bridge (H) and the fourth transistor (T4) of the H-bridge (H), which causes the negative charge pump (LPMB). rapid suction of the stored charge carriers short-circuits the positive charge pump (LPPA) to generate a fast switch-on edge and thus uses up its energy reserves.

However, this idea will be put into perspective again below.

In the sense of this disclosure, the “PAn” state is assumed for a very short switch-on time (τ _pp ). To switch on quickly, an increased forward voltage (U _DR ) is applied to the first light-emitting diode (LED1) in the flow direction. In the “ _POff ” state, an increased clearing voltage (U _RM ) in the reverse direction of the first light-emitting diode (LED1) is then applied to this first light-emitting diode (LED1) for a very short clearing time (τ pn ). The “POff” state is therefore only assumed for this short clearing time (τ _pn ) and then left again. This clearing time (τ _pn ) is preferably dimensioned such that a residual charge of the storage charge is still present in the first light-emitting diode (LED1) after the end of the clearing time (τ _pn ), which protects it from destruction due to avalanche effects.

Figure 10

10 shows the simulation of a comparison between 3 driver circuits (listed from longest to shortest pulse): current driver (20mA) (reference symbol c), voltage driver (3.3V) (reference symbol b), H-bridge (40V) (reference symbol a). As can be clearly seen, the proposed method is much better suited to generating short pulses than the other methods from the prior art.

Figure 11

shows the current curve in the proposed pulsation method and the voltage curve at the first light-emitting diode (LED1). For a very short switch-on time (τ _pp ), a forward voltage (U _DR ) is applied to the first light-emitting diode (LED1) in the forward direction. As a result, the electrical current through the first light-emitting diode (LED1) rises steeply very quickly. Their barrier layer is flooded with charge carriers, and preferably no quasi-static equilibrium is established. Rather, after this switch-on time (τ _pp ) has elapsed, the polarity of the voltage on the first light-emitting diode (LED1) is preferably reversed. For a clearing time (τ _pn ), a clearing voltage (U _RM ) is then applied to the first light-emitting diode (LED1) in the reverse direction. This clearing time (τ _pn ) is calculated so that a residual charge remains in the first light-emitting diode (LED1). This is the case if this clearing time (τ _pn ) is designed to be shorter than the storage time (τ _SP1 ) of the charge carriers in the first light-emitting diode (LED1) when this is typically operated at a voltage that is increased compared to the supply voltage as a forward voltage (U _DR ) in the pulse -Operation in the flow direction of the first light-emitting diode (LED1) and at the same time using a clearing voltage (U _RM ) that is increased in magnitude compared to the amount of the supply voltage in the reverse direction of the first light-emitting diode (LED1). The storage time (τ _SP0 ) of the charge carriers in the first light-emitting diode (LED1) when operating with a normal, i.e. not increased, supply voltage (U _DR ) and using the supply voltage as a clearing voltage (U _RM ) in the reverse direction of the first light-emitting diode (LED1) is also shown . (see also 10 , case b)

Figure 12

12 equals to 3 with the difference that an H-bridge control instrument (HCV) is also provided for measuring the voltage drop across the load in the first H-bridge (H), i.e. typically the lamp voltage (VLED1) across the first light-emitting diode (LED1). To be able to check the functionality of the control by the first H-bridge (H) and the first LED (LED1) of the H-bridge (H) during operation and, if necessary, to be able to optimize individual control parameters of the bridge, as explained below. The detection of the lamp voltage (VLED1) via the first light-emitting diode (LED1) is particularly necessary because motor vehicle headlights in particular are safety-relevant sub-devices of these motor vehicles. The first light-emitting diode (LED1) can also be an interconnection of several light-emitting diodes (LEDs). In particular, it can be an LED chain. If one of these LEDs fails, it should be possible to measure and signal its failure. For this purpose, for example, the H-bridge control instrument (HCV) compares the voltage drop (VLED1) across the first light-emitting diode (LED1), which we now assume is, for example, a chain of several LEDs, with a reference value that corresponds to the current state the H-bridge (H) fits. If the voltage drop (VLED1), for example, is above a first threshold value and below a second threshold value, which is different from the first threshold value and is preferably greater than this first threshold value, it can be concluded that the combination of the several LEDs is within the permitted tolerance range is marked by these threshold values and is therefore OK. In the other two cases, the H-bridge control instrument (HCV) detects an error and passes it on. For this purpose, the H-bridge control instrument (HCV), for example, signals this measured value of the lamp voltage (VLED1) to a computer system (µC), which can be part of the H-bridge (H), but also in a higher-level context, as shown in this disclosure , can be located. This signaling of the lamp voltage (VLED1) to a computer system (µC) can also take place in the form of signaling the time profile of the lamp voltage (VLED1). It is therefore proposed that the time course of the lamp voltage (VLED1) during the emission of the light pulse is recorded at least with a sample value. The computer system (µC) can then, depending on the determined time profile of the lamp voltage (VLED1) or a value of the lamp voltage (VLED1), at a time determine the parameters for controlling the first light-emitting diode (LED1), in particular by adjusting the charge pump voltage of the charge pumps (LPPB, LPPA, LPMB, LPMA) e.g. in the form of the bias voltage of the energy reserves (C_LPPB, C_LPPA, C_LPMB, C_LPMA) of the charge pumps (LPPB, LPPA, LPMB, LPMA) or the voltage converters (SVPB, SVPA, SVMB, SVMA) and by varying the Set dwell times in the states “PAN”, “PAUS” and “ZV”. This is further explained in detail below. If the first LED (LED1) is also to be used as a lighting device, the computer system (µC) can also control the supply voltage of the first LED (LED1) and the duty cycle of the PWM, with which the control unit (ST) via the switching elements (T1, T2, T3, T4) of the H-bridge (H) controls the first light-emitting diode (LED1). If the first LED (LED1) is a connection of several LEDs, it can also make sense to measure the lamp voltage of individual LEDs of this plurality of LEDs, so that the analysis and monitoring errors can then occur individual LEDs of this plurality of LEDs can be detected. In this respect, the scheme of the 12 just an example.

Figure 13

13 equals to 12 with the difference that a first H-bridge control instrument (HCl1) is provided for measuring the current through the first switching element of the H-bridge, i.e. typically through the first transistor (T1), here by detecting the voltage drop across the first transistor (T1). is and a second H-bridge control instrument (HCl2) is provided for measuring the current through the second switching element of the H-bridge, i.e. typically through the second transistor (T2), here by detecting the voltage drop across the second transistor (T2), and a third H-bridge control instrument (HCl3) for measuring the current through the third switching element of the H-bridge, i.e. typically through the third transistor (T3), here by detecting the voltage drop across the third transistor (T3), and a fourth H-bridge Bridge control instrument (HCl4) for measuring the current through the fourth switching element of the H-bridge, i.e. typically through the fourth transistor (T4), here by detecting the voltage drop across the fourth transistor (T4) and to check the functionality of the control by the to be able to control the first H-bridge (H) and the first LED (LED1) of the H-bridge (H) during operation, in particular by drawing conclusions about the current flowing. If a switching element of the switching elements (T1, T2, T3, T4) of the H-bridge (H) fails, the voltage drop across this switching element no longer corresponds to the associated expected value. The H-bridge, particularly in conjunction with an H-bridge control instrument (HCV), is able to control the energy output to the first LED (LED1) and to adjust the control before critical threshold values are exceeded. In particular, both the current curve over time and the voltage curve over time can be precisely regulated and optimized. It is therefore very advantageous if both the positive charge pumps (LPPB, LPPA) and the negative charge pumps (LPMA, LPMB) or the negative voltage converters (SVMA, SVMB) can be regulated in their output voltage. This regulation is preferably specified by the controller (ST) or the computer system (µC). In addition, it then makes sense to operate the transistors (T1, T2, T3, T4) not only as switches, but also as current source transistors and to use these to regulate the current through the first LED (LED1). This makes it possible to specify a power transfer curve over time for the first LED (LED1), which specifies when and how much energy is fed into the first LED (LED1) or taken from the first LED (LED1). As part of the development of the proposal, it was recognized that it can definitely make sense to have a certain cross-current in the half-bridges (HB1, HB2) of the H-bridge (H) when changing from an additional cross-current state "PQZ" to the "POff" state to be allowed because this means that the charge carriers are not only cleared more quickly in the first LED (LED1), but are also removed more quickly from the transistors (T2, T3) that are turned off.

It was recognized that for the transition from the “PAus” state to the “PAn” state it makes sense and is preferred to actually go through the “PZ” state, with all transistors of both at the end of the stay in the “PZ” state Half bridge (HB1: T1, T2; HB2: T3, T4) are actually completely off. This distinguishes the “PZ” state from the “QPZ” state described later. Since the charge carriers in the transistors that were previously switched on in the “POff” state (in the example the first transistor T1 and the fourth transistor T4) are then only reduced very slowly, this state must be maintained for a minimum dwell time (T _PZmin ). Only then can the change from the “PZ” state to the “PAn” state take place. (See also 9 )

However, the situation is different for the reverse case of the transition from the “PAn” state to the “PAn” state. Here, the first LED (LED1) and the transistors that switch off (in the example the second transistor T2 and the third transistor T3) should be cleared of charge carriers as quickly as possible. Since the switching off transistors (in the example the second transistor T2 and the third transistor T3) require some time to switch off, it makes sense to create a cross current through the switching on transistors (in the example the first transistor T1 and the fourth transistor T4). Allow the “PAn” state to begin. This achieves two effects:

First, the turning off transistors (in the example the second transistor T2 and the third transistor T3) are discharged more quickly by the turning on transistors (in the example the first transistor T1 and the fourth transistor T4). The transistors that turn on also absorb a large part of the respective currents that the transistors that turn off (in the example the second transistor T2 and the third transistor T3) would otherwise supply to the first LED (LED1).

Secondly, this leads to a faster polarity reversal and thus discharge of the first LED (LED1). It therefore makes sense if the permissible cross currents in the respective half bridges (HB1, HB2) are the same during the switching off of the switching off transistors (in the example the second transistor T2 and the third transistor T3) during the transition from the "PAn" state to the "PAn". “state is maximized up to thermal permissibility. This means that the transition from the “PAn” state to the “PAn” state preferably takes place via a “PQZ” state in which a short-term cross current is permitted that is larger than the cross current in the “PZ” state. In order to be able to achieve the aforementioned cross-current maximization in the “PQZ” state, it is particularly advantageous to be able to record the essential parameters of the energy loss in the transistors (T1, T2, T3, T4). Since the behavior of the transistors (T1, T2, T3, T4), in particular their on-resistance, is generally known, it makes sense to calculate the respective energy output based on the voltage drops across the transistors (T1, T2, t3, T4). . The axial current of the H-bridge through the first LED (LED1) can usually be estimated from the voltage drop across the first LED (LED1). In this context, it can make sense to use two shunt resistors (Rs1, Rs2), for example in the ground lines of the H-bridge (H) (see 23 ) to measure the current exactly and not just estimate it from the voltage drop across the transistors (T1, T2, T3, T4). Since the function of the transistors (T1, T2, T3, T4) is different, the first transistor (T1) of the H-bridge (H) is typically not the same as the third transistor (T3) of the H-bridge (H) and the the second transistor (T2) of the H-bridge (H) is typically not the same as the fourth transistor (T4) of the H-bridge (H). The expert will determine the exact dimensioning through calculation and simulation, taking into account the first LED used (LED1) and the layout of the typically used printed circuit. The regulation of the cross currents in the two states “PZ” and “PQZ” is preferably carried out by regulating the voltage of the charge pumps (LPPA, LPPB, LPMA, LPMB) or the voltage converters (SVPA, SVPB, SVMA, SVMB) and the regulation of the Switch-on and switch-off times of the transistors (T1, T2, T3, T4). The actual variables of such a control can be the voltage across the first LED (LED1), the voltage drops across the transistors (T1, T2, T3, T4) and, if necessary, additional measured values for the current through the respective half bridges (HB1: T1, T2; HB2: T3, T4) can be used.

From the state of the art (e.g US 4,571,506 A , column 2 lines 59 to 65) it is known that higher reverse voltages on an LED lead to a shortening of the storage time (τ _SP0 ). It is also known from the prior art that the maximum permissible reverse voltage that can be applied (peak reverse voltage) is limited by the breakdown properties of the light-emitting diode. According to the invention, it has now been recognized that the n and p charge carriers still in the barrier layer prevent the formation of high field strengths within the PN junction of the first light-emitting diode (LED1) at the beginning of the clearing process, as long as such mobile space charge clouds are still in the barrier layer . This then results in a current limited by the dynamic space charge. Furthermore, it was recognized that the light output had already decreased before all charges had been removed from the barrier layer, since the centers of gravity of the positive charge of the holes and the negative charge of the electrons converged. Therefore, it is usually sufficient to remove a significant part of the space charge, but not all of the space charge. It therefore makes sense to apply a large forward voltage (U _DR ) to the first LED (LED1) in the forward direction for a very short switch-on time (τ _pp ), so that it is quickly flooded with charge carriers and then a very large reverse voltage for a very short one Clearing time (τ _pn ) should be applied, which is shorter than the resulting storage time (τ _SP1 ), which would result from this blocking voltage. The clearing time (τ _pn ) is preferably less than 95% of the storage time (τ _sp1 ), preferably less than 95% of the storage time (τ _sp1 )), preferably less than 90% of the storage time (τ _sp1 ), preferably less than 85% the storage time (τ _sp1 ), preferably less than 80% of the storage time (τ _sp1 ), preferably less than 75% of the storage time (τ _sp1 ). It is recommended to accurately qualify the impact on the junction and lifespan of the LEDs and adjust the clearing time (τ _pn ) appropriately according to the results.

The residual charge remaining in the first LED (LED1) protects the first LED (LED1) from an avalanche breakdown, since the charge cloud of the residual charge prevents the development of a large field strength within the LED. On the cathode side, the early switching off of the switch-off voltage prevents the occurrence of a cathode drop caused by the electrons and on the anode side, this prevents the occurrence of an anode drop due to the holes, since these charge carriers are still in the drift path at this switch-off time.

Unlike in the US 4,571,506 A , which only has a small reverse voltage of 0.2Vdc (column 2, lines 27 to 32 of the US 4,571,506 A ) on the LED to be switched off, a very significant blocking voltage, which is preferably in the range of the forward voltage, is now applied to the first LED (LED1). In technical teaching US 4,571,506 A It was not recognized that there was sufficient remaining charge after the LED has been switched off at an accelerated rate, is critical for the lifespan of the LED to be energized, as it is the only thing that prevents the development of high field strengths. Another point is to prevent thermal breakdown of the LED. It was recognized that the heat input into the LED must be limited. Therefore, the higher the selected applied voltage, the lower the pulse repetition frequency for generating such high-performance pulses must be. Since the pulse power increases with the square of the voltage, the pulse spacing must be increased and/or the pulse duration reduced in order to limit the average registered power. As soon as the remaining charge is reduced, a strong electric field develops inside the LED, which can lead to the destruction of the LED due to avalanche effects. This operating condition must therefore be avoided at all costs.

The switch-on time (τ _pp ) and the clearing time (τ _pn ) can be controlled, for example, by suitable timers, such as delay elements, etc. If the storage times (τ _SP0 , τ _SP1 ) of the first LED (LED1) are known depending on the amounts of the applied voltages, these times can be set constructively. A temperature dependence is preferably taken into account. For example, programmable delay elements can be used for setting these times depending on the operating state, together with a suitable start signal, which is then adjusted by these delay elements.

Furthermore, it can make sense to provide the transistors (T1, T2 / T3, T4) with one or more thermocouples that monitor the transistors during operation. Their parameters can also be used for the control.

It is therefore particularly advantageous if at least one of the transistors (T1, T2/T3, T4) is thermally coupled to a temperature sensor, in particular a PN diode or a bipolar transistor as a temperature sensor. If the transistors (T1, T2/T3, T4) of the H-bridge (H) are MOS transistors, it is particularly useful if the at least one temperature sensor is located in the center of a symmetry point of such a transistor. For example, it makes sense to make such a MOS transistor square and to place a small PN diode or a bipolar transistor in the geometric center of the transistor. The diode voltage or the diode voltage of the base-emitter diode is temperature-dependent and can be measured. It can therefore be used as an actual value transmitter to regulate the current through the half bridges (HB1, HB2) of the H-bridge. In order to be able to regulate the current, at least one transistor (e.g. T2) is used as a current source transistor.

Figure 14

14 shows how 9 schematically shows how a transition from one operating state to the next operating state is possible. However, it is now assumed that during the transition from the “PAn” state, in which the first transistor (T1) and the fourth transistor (T4) are off and the second transistor (T3) and the third transistor (T3) are on, In the "POff" state, in which the first transistor (T1) and the fourth transistor (T4) are conducting and the second transistor (T3) and the third transistor (T3) are off, a different cross current than in the transition from "POff". ” state to the “PAn” state is desired. (See also description of 13 .)

Firstly, only a change from the “POff” state of the H-bridge (H) (=LED is electrically biased in the reverse direction) is preferred, in which the first transistor (T1) and the fourth transistor (T4) are conducting and the second Transistor (T3) and the third transistor (T3) are blocking, in the "PZ" state (= no defined voltage is applied to the LED and preferably all transistors are blocked. ), in which preferably the first transistor (T1) and the fourth transistor (T4) are conducting and the second transistor (T3) and the third transistor (T3) are blocking, possible. The reverse transition is now no longer desired.

Secondly, only a change from the “PZ” state of the H-bridge (H) is preferred, in which preferably the first transistor (T1) and the fourth transistor (T4) are blocking and preferably the second transistor (T3) and the third Transistor (T3) are off, in the "PAn" state (=LED is electrically biased in the flow direction), in which the first transistor (T1) and the fourth transistor (T4) are off and the second transistor (T3) and the third transistor (T3) are conductive, possible. The reverse transition is now no longer desired.

Thirdly, only a change from the “PAn” state of the H-bridge (H) is preferred, in which the first transistor (T1) and the fourth transistor (T4) are blocking and the second transistor (T3) and the third transistor ( T3) are conducting, in the additional “PQZ” state (= a certain cross current in the H-bridge (H) is permitted.), in which preferably the first transistor (T1) and the fourth transistor (T4) are blocking and preferably the second transistor (T3) and the third transistor (T3) are blocking, possible. The reverse transition is now no longer desired.

Fourthly, only a change from the additional “PQZ” state of the H-bridge (H) is preferred, in which the first transistor (T1) and the fourth transistor (T4) are preferably off and the second transistor (T3) and the third are off Transistor (T3) are blocking, in the "POff" state of the H-bridge (H), in which the first transistor (T1) and the fourth transistor (T4) are conducting and the second transistor (T3) and the third transistor are conducting (T3) are blocking, possible. The reverse transition is now no longer desired.

As before, the “PZ” state describes the first overall state of the device, in which the first transistor (T1) and the fourth transistor (T4) are off and the second transistor (T3) and the third transistor (T3) are off . In the first overall state, the “PZ” state, all control connections (G1, G2, G3, G4) are preferably in a second logical state. This means that all transistors (T1, T2, T3, T4) are preferably in their second operating state (blocked). The LED (LED1) does not emit any light.

The “PAn” state describes the second overall state of the device, wherein in the second overall state the second control connection (G2) and the third control connection (G3) are in a first logical state and thus the second transistor (T2) and the third Transistor (T3) is in the first operating state (conducting). The first control connection (G1) and the fourth control connection (G4) are in a second logical state and thus the first transistor (T1) and the fourth transistor (T4) are in the second operating state (blocked). The LED (LED1) emits light and is electrically biased in the direction of flow.

The “POff” state describes the third overall state of the device, wherein in the third overall state the second control connection (G2) and the third control connection (G3) are in a second logical state and thus the second transistor (T2) and the third Transistor (T3) is in the second operating state (blocked). The first control connection (G1) and the fourth control connection (G4) are in a first logical state and thus the first transistor (T1) and the fourth transistor (T4) are in a first operating state (conducting). The LED (LED1) does not emit any light and is electrically biased in the reverse direction.

The “PQZ” state describes the fourth overall state of the device, whereby in the fourth overall state the control connections (G1, G2, G3, G4) are activated in such a way that the second transistor (T2) and the third transistor (T3) from the first operating state (conductive) to the second operating state (blocked) as quickly as possible and the first control connection (G1) and the fourth control connection (G4) are in a first logical state and thus the first transistor (T1) and the fourth transistor (T4) are in a first operating state (conducting). A cross current typically occurs because the second transistor (T2) and the fourth transistor (T4) enter the "POff" state when exiting the "PQZ" state due to the typically short residence time in the "PQZ" state is not yet completely switched off and therefore the first transistor (T1) already supplies electrical current, which is then absorbed directly by the second transistor (T2). It is therefore particularly important that, on the one hand, the time (Δt) in which the H-bridge (H) is in this “PQZ” state is precisely controlled, preferably regulated, and, on the other hand, that the cross current that occurs in the Half bridges (HB1: T1, T2; HB2: T3, T4) of the H-bridge (H) in the subsequent “POff” state are also preferably precisely controlled, and are preferably regulated over the time course of the cross current by means of a current source circuit. If cross currents are to be actively used, it is conceivable to assume one of the states in Table 1 with cross currents for a defined period of a defined length within the “PQZ” state as an additional temporary state. In such a provoked cross-current condition, however, this cross-current should then preferably be limited by current source transistors (T2, T4) and most preferably controlled or regulated. The LED (LED1) turns off in this “PQZ” state. The H-bridge (H) changes the voltage applied to the first LED (LED1) from forward to reverse in this “PQZ” state. The second overall state, the “PAn” state, is assumed in light pulse operation for no longer than a switch-on time (τ _pp ), which is preferably smaller than the charge carrier lifespan (τ), since the control is based on the technical teaching proposed here with an increased operating voltage In this light pulse operation, the light-emitting diodes flow in the direction of flow. The third overall state, the “POff” state, is also assumed to be no longer than a clearing time (τ _pn ), whereby the clearing time (τ _pn ) is smaller than the charge carrier lifetime (τ), since the control is based on the technical method proposed here Teaching with an increased operating voltage in this light pulse operation in blocking direction of the LEDs. It is particularly important that the space charge zone of the light-emitting diodes must not be emptied. The switch-on time (τ _pp ) must be smaller than the charge carrier lifetime (τ).

The 14 shows as a state diagram the at least permissible overall states “PQZ”, “PAn”, “PZ” and “PAus” of the H-bridge (H). Other states are conceivable (see Table 1). The cross current conditions are typically blocked as shown in the table. In order to clear out the charge carriers etc., a preferably very short-term assumption of these states marked “blocked” is conceivable, for example if transistors (e.g. T2, T4) of the H-bridge are operated as current source transistors or the converted power is limited in some other way. Table 1: states of the proposed H-bridge (H) in the simplest version. Condition first half bridge second half bridge Duration of intake in light pulse mode LED1 conditions T1 T2 T3 T4 1 out of out of out of out of any does not light up “PZ” condition 2 at out of out of out of any does not light up tnv. 3 out of at out of out of any does not light up tnv. 4 at at out of out of Cross current in the first half bridge (HB1) blocked 5 out of out of at out of does not light up tnv. 6 at out of at out of Clearing time (τ _pn ) does not light up, charges are cleared from LED1 “POff” state 7 out of at at out of Switch-on time (τ _pp ) shines “PAn” state 8th at at at out of Cross current in the first half bridge (HB1) blocked 9 out of out of out of at any does not light up tnv. 10 at out of out of at any does not light up, LED1 is short-circuited via positive supply voltage “k” state (1st variant) 11 out of at out of at any does not light up, LED1 is short-circuited via negative supply voltage “k” state (2nd variant) 12 at at out of at Cross current in the first blocked Half bridge (HB1) 13 out of out of at at Cross current in the second half bridge (HB2) blocked 14 at out of at at Cross current in the second half bridge (HB2) blocked 15 out of at at at Cross current in the second half bridge (HB2) blocked 16 at at at at Cross current in the first half bridge (HB1) and in the second half bridge (HB2) blocked tnv. = typically not used, but permitted.

Only by precisely controlling the cross-current in the “PQZ” state can it be avoided that an uncontrolled cross-current occurs across the first transistor (T1) of the H-bridge (H) and the second tran sistor (T2) of the H-bridge (H), which short-circuits the negative charge pump (LPMA) to generate a fast switch-on edge with the positive charge pump (LPPB) to quickly suck out the stored charge carriers and thus consumes their energy reserve in an uncontrolled manner or the H-bridge (H) damaged or, in the case of a voltage converter (SVPB) instead of the charge pump (LPPB), the voltage converter (SVPB) is damaged.

This exact control of the cross current in the "PQZ" state can also prevent an uncontrolled cross current from occurring across the third transistor (T3) of the H-bridge (H) and the fourth transistor (T4) of the H-bridge ( H) comes, which short-circuits the negative charge pump (LPMB) for quickly sucking out the stored charge carriers with the positive charge pump (LPPA) to generate a fast switch-on edge and thus consumes its energy reserve in an uncontrolled manner or damages the H-bridge (H) or in the case of a voltage converter (SVMB) damaged the voltage converter (SVMB) instead of the charge pump (LPMB).

It is obvious that when using a "PQZ" state, the energy reserves (C_LPPA, C_LPPB, C_LPMA, C_LPMB) of the charge pumps (LPPA, LPPB, LPMA, LPMB) must be chosen to be larger in terms of capacity in order to compensate for the energy losses caused by the cross current that occurs .

If voltage converters (SVPA, SVPB, SVMA, SVMB) are used instead of charge pumps (LPPA, LPPB, LPMA, LPMB), their internal resistances must be selected appropriately.

The second overall state, the "PAn" state, is assumed in light pulse operation for no longer than a switch-on time (τ _pp ), which is preferably smaller than the charge carrier lifetime (τ), since the control according to the technical teaching proposed here involves an increased Operating voltage in this light pulse operation takes place in the direction of flow of the light-emitting diodes. The third overall state, the “POff” state, is also assumed to be no longer than a clearing time (τ _pn ), whereby the clearing time (τ _pn ) is smaller than the charge carrier lifetime (τ), since the control is based on the technical method proposed here Teaching with an increased operating voltage in this light pulse operation takes place in the reverse direction of the light-emitting diodes. It is particularly important that the space charge zone of the light-emitting diodes must not be emptied. The switch-on time (τ _pp ) must be smaller than the charge carrier lifetime (τ).

Figure 15

15 shows an exemplary, proposed headlight system (SW) schematically simplified and functionally symbolic, whereby the lamp, the first LED (LED1), can be used both pulsed in a pulsed operating state (GPB) and as a lamp for quasi-continuous lighting in a quasi-continuous operating state (QDB). .

The H-bridge (H) is connected to the anode (A) of the first LED (LED1) by means of the second connection (2) of the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H). The H-bridge (H) is connected to the anode (A) of the first LED (LED1) by means of the third connection (3) of the second transistor (T2) of the first half-bridge (HB1) of the H-bridge (H). The H-bridge (H) is connected to the cathode (K) of the first LED (LED1) by means of the sixth connection (6) of the third transistor (T3) of the second half-bridge (HB2) of the H-bridge (H). The H-bridge (H) is connected to the cathode (K) of the first LED (LED1) by means of the seventh connection (7) of the fourth transistor (T4) of the second half-bridge (HB2) of the H-bridge (H).

In this example, the H-bridge (H) is supplied with a positive overall supply voltage (VCC) and is connected to the negative overall supply voltage (GND). The supply voltage lines of the other blocks are not shown for simplicity, as is generally the case in this disclosure.

A control device (ST) generates the control signal for the first control connection (G1) of the first transistor (T1) of the H-bridge (H). The control device (ST) generates the control signal for the second control connection (G2) of the second transistor (T2) of the H-bridge (H). The control device (ST) generates the control signal for the third control connection (G3) of the third transistor (T3) of the H-bridge (H). The control device (ST) generates the control signal for the fourth control connection (G4) of the fourth transistor (T4) of the H-bridge (H).

If the charge pumps (LPPA, LPPB, LPMA, LPMB) or voltage converters (SVPA, SVPB, SVMA, SVMB) of the H-bridge (H) that are not shown require a clock (clk3) for their operation, this is preferably based on a common time base (TB) provided as the base time signal (clk3) of the H-bridge (H). The time base (TB) generates the base time signals (clk1, clk2, clk3) of the device. This is preferably the base time signal (clk1) (typically = base clock) of a computer system (µC), which preferably controls the entire device, and the base time signal (clk2) (typically = base clock) of the control device (ST), for direct control of the H-bridge (H), and said base time signal (clk3) (typically = base clock) of the H-bridge (H). These base time signals can depend on each other or be the same. The control device (ST) is preferably a mixed analog/digital circuit. Provided a state diagram accordingly 9 is used, the control device can also be a purely digital finite state machine, which generates purely digital control signals (G1, G2, G3, G4) for the transistors (T1, T2, T3, T4) of the H-bridge generated. However, if in each half-bridge (HB1: T1, T2; HB2: T3, T4) of the H-bridge (H) one of the transistors (e.g. T2, T4) of each half-bridge (HB1, HB2) is used not only as a switching element, but also as a current source transistor is to be used, the control device (ST) must detect the gate-source voltage of these relevant transistors (e.g. T2, T4) used as a current source of the respective half-bridge (HB1, HB2) of the H-bridge (H) and compare it to one Voltage reference, eg the voltage across a MOS transistor diode through which reference current flows, if they are in a state in which they are not blocked.

The control device (ST) also typically generates the correct time behavior when running through the state diagrams, for example. B. the 9 , 14 and 22 . Furthermore, the control device preferably sets the voltage of the charge pumps (LPPA, LPPB, LPMA, LPMB), if used, or the voltage converters (SVPA, SVPB, SVMA, SVMB), if used.

The control device (ST) is preferably controlled by the exemplary computer system (µC). This preferably records all measurement parameters that are recorded in the device and, if necessary, adjusts the operating parameters appropriately. The computer system (µC) preferably communicates with the control unit (ST) via an internal data bus (IB). The computer system (µC) transmits essential operating parameters to the control system (ST), such as setting which type of state diagram should be used or how long the control device (ST) is allowed to allow the H-bridge (H) to remain in the “PQZ” state or which cross currents should be set, for example when entering the "POff" state, e.g. using a current source transistor (e.g. T2), etc. If the supply voltage (VCC) comes from a voltage regulator, which may be part of the device, it makes sense if its operating parameters , in particular the voltage (VCC) against the reference potential (here GND), is also controlled by the computer system (µC). This may also apply to voltage converters (SVPA, SVPB, SVMA, SVMB) or charge pumps (LPPA, LPPB, LPMA, LPMB) for supplying the H-bridge (H). The computer system (µC) communicates via a data bus (DB) with higher-level computer systems not shown in the figures, e.g. a control unit in a motor vehicle.

The light pulses (LP) generated by the first LED (LED1) are coupled out of the headlight (SW) into the outside space via optics (OP) and, if necessary, using mirror optics (RF). Other radiation directions are typically suppressed by diaphragms (BL).

Figure 16

shows an exemplary modified H-bridge (H) for use in a device according to. 15 and in modification of the 3 . In contrast to the H-bridge 3 can be the H-bridge (H). 16 and the first LED (LED1) can now be used both for the emission of optimized light pulses (LP) and for the optimized light emission for lighting purposes by switching between one on charge pumps (LPPA, LPPB, LPMA, LPMB) or on voltage converters (SVPA, SVPB , SVMA, SVMB) based energy supply and a direct energy supply from the total supply voltages (VCC, GND) using additional transistors (T5, T6, T7, T8, T9, T10, T11, T12).

Should the first LED (LED1) be able to be operated in a first operating mode, in which the first LED (LED1) is used as a light source for lighting purposes (e.g. driving lights) in a quasi-continuous operation (QDB), and thus be operated in a second operating mode in time division multiplex can, in which the first LED (LED1) is used as a measuring light source for generating light pulses (LP) in a pulsed operation (GPB), it is advantageous if the H-bridge (H) can be operated with different operating voltage sources are assigned to these two operating modes and optimized for each.

In the example of the 16 The task is based on the example of an H-bridge (H). 3 solved in that an analog multiplexer (T9, T5 ; T8, T12; T10, T6; T7, T11) is inserted, which makes it possible to connect the respective transistor (T1, T2, T3, T4) in quasi-continuous operation (QDB) directly to the respective overall supply voltages (VCC, GND) and in pulsed operation (GPB) with the output (9, 12, 13, 15) of the respective charge pump (LPPA, LPPB, LPMA, LPMB) or the respective voltage converter (SVPA, SVPB, SVMA, SVMB). The switchover is carried out by the control unit (ST) of the H-bridge (H).

• Der erste Transistor (T1) ist mit seinem ersten Anschluss (1) nicht mit dem zehnten Anschluss (10) der positiven Ladungspumpe (LPPB) bzw. Spannungswandler (SVPB) zum schnellen Absaugen der gespeicherten Ladungsträger verbunden, sondern mit dem sechsundzwanzigsten Anschluss (26) des fünften Transistors (T5). Dieser fünfte Transistor (T5) ist nun mit seinem sechsundzwanzigsten Anschluss (26) stattdessen mit dem zehnten Anschluss (10) der positiven Ladungspumpe (LPPB) bzw. Spannungswandler (SVPB) zum schnellen Absaugen der gespeicherten Ladungsträger verbunden. Der fünfte Transistor (T5) ist also zwischen dem zehnten Anschluss (10) der positiven Ladungspumpe (LPPB) bzw. Spannungswandler (SVPB) zum schnellen Absaugen der gespeicherten Ladungsträger und dem ersten Anschluss (1) des ersten Transistors (T1) geschaltet. Der fünfte Transistor (T5) wird durch die Steuereinrichtung (ST) über den fünften Steueranschluss (G5) des fünften Transistors (T5) kontrolliert.

In detail, the task of increasing the voltage on the lamp, the first LED (LED1), for better flooding or clearing of the lamp, the first LED (LED1), with charge carriers is solved as follows:

• The first transistor (T1) is connected with its first connection (1) not to the tenth connection (10) of the positive charge pump (LPPB) or voltage converter (SVPB) for quickly extracting the stored charge carriers, but to the twenty-sixth connection (26) the fifth transistor (T5). This fifth transistor (T5) is now connected with its twenty-sixth connection (26) instead to the tenth connection (10) of the positive charge pump (LPPB) or voltage converter (SVPB) for quickly extracting the stored charge carriers. The fifth transistor (T5) is therefore connected between the tenth connection (10) of the positive charge pump (LPPB) or voltage converter (SVPB) for quickly extracting the stored charge carriers and the first connection (1) of the first transistor (T1). The fifth transistor (T5) is controlled by the control device (ST) via the fifth control connection (G5) of the fifth transistor (T5).

The first transistor (T1) is also connected with its first connection (1) to the eighteenth connection (18) of the ninth transistor (T9). This ninth transistor (T9) is the one in the example 16 now connected to the positive total supply voltage (VCC) with its seventeenth connection (17). The ninth transistor (T9) therefore bridges the positive charge pump (LPPB) or voltage converter (SVPB) for quickly extracting the stored charge carriers when it is switched on by the control device (ST). In order not to short-circuit the positive charge pump (LPPB) or voltage converter (SVPB) for the rapid extraction of the stored charge carriers, the fifth transistor (T5) must then be blocked by the control device (ST) when the ninth transistor (T9) is electrically blocked by the control device (ST) is switched on. However, the ninth transistor (T9) must be blocked if the fifth transistor (T5) is switched on by the control device (ST). The fifth transistor (T5) and the ninth transistor (T9) thus represent a first analog multiplexer that is controlled by the control device (ST). The ninth transistor (T9) is controlled by the control device (ST) via the ninth control connection (G9) of the ninth transistor (T9).

The third transistor (T3) is connected with its fifth connection (5) not to the fourteenth connection (14) of the positive charge pump (LPPA) or voltage converter (SVPA) for generating a fast switch-on edge, but to the thirtieth connection (30) of the eighth transistor (T8). This eighth transistor (T8) is now connected with its twenty-ninth connection (29) instead to the fourteenth connection (14) of the positive charge pump (LPPA) or voltage converter (SVPA) to generate a fast switch-on edge. The eighth transistor (T8) is therefore connected between the fourteenth connection (14) of the positive charge pump (LPPA) or voltage converter (SVPA) for generating a fast switch-on edge and the fifth connection (5) of the third transistor (T3). The eighth transistor (T8) is controlled by the control device (ST) via the eighth control connection (G8) of the eighth transistor (T8).

The third transistor (T3) is also connected via its fifth connection (5) to the twenty-second connection (22) of the twelfth transistor (T12). This twelfth transistor (T12) is the one in the example 16 now connected to the positive total supply voltage (VCC) with its twenty-first connection (21). The twelfth transistor (T12) therefore bridges the positive charge pump (LPPA) or voltage converter (SVPA) to generate a fast switch-on edge when it is switched on by the control device (ST). In order not to short-circuit the positive charge pump (LPPA) or voltage converter (SVPA) to generate a fast switch-on edge, the eighth transistor (T8) must be blocked by the control device (ST) when the twelfth transistor (T12) is blocked by the control device (ST). is switched on. However, the twelfth transistor (T12) must be blocked if the eighth transistor (T8) is switched on by the control device (ST). The eighth transistor (T8) and the twelfth transistor (T12) thus represent a second analog multiplexer, which is controlled by the control device (ST) is controlled. The twelfth transistor (T12) is controlled by the control device (ST) via the twelfth control connection (G12) of the twelfth transistor (T12).

The second transistor (T2) is connected with its fourth connection (4) not to the fifteenth connection (15) of the negative charge pump (LPMA) or voltage converter (SVMA) for generating a fast switch-on edge, but to the twenty-seventh connection (27) of the sixth transistor (T6). This sixth transistor (T6) is now connected with its twenty-eighth connection (28) instead to the fifteenth connection (15) of the negative charge pump (LPMA) or voltage converter (SVMA) to generate a fast switch-on edge. The sixth transistor (T6) is therefore connected between the fifteenth connection (15) of the negative charge pump (LPMA) or voltage converter (SVMA) for generating a fast switch-on edge and the fourth connection (4) of the second transistor (T2). The sixth transistor (T6) is controlled by the control device (ST) via the sixth control connection (G6) of the sixth transistor (T6).

The second transistor (T2) is also connected via its fourth connection (4) to the nineteenth connection (19) of the tenth transistor (T10). This tenth transistor (T10) is the one in the example 16 now connected to the negative supply voltage (GND) with its twentieth connection (20). The tenth transistor (T10) therefore bridges the negative charge pump (LPMA) or voltage converter (SVMA) to generate a fast switch-on edge when it is switched on by the control device (ST). In order not to short-circuit the negative charge pump (LPMA) or voltage converter (SVMA) to generate a fast switch-on edge, the sixth transistor (T6) must be blocked by the control device (ST) when the tenth transistor (T10) is blocked by the control device (ST). is switched on. However, the tenth transistor (T10) must be blocked if the sixth transistor (T6) is switched on by the control device (ST). The sixth transistor (T6) and the tenth transistor (T10) thus represent a third analog multiplexer which is controlled by the control device (ST). The tenth transistor (T10) is controlled by the control device (ST) via the tenth control connection (G10) of the tenth transistor (T10).

The fourth transistor (T4) is not connected with its eighth connection (8) to the twelfth connection (12) of the negative charge pump (LPMB) or voltage converter (SVMB) for quickly extracting the stored charge carriers, but to the thirty-first connection (31) the seventh transistor (T7). This seventh transistor (T7) is now connected with its thirty-second connection (32) instead to the twelfth connection (12) of the negative charge pump (LPMB) or voltage converter (SVMB) for quickly extracting the stored charge carriers. The seventh transistor (T7) is therefore connected between the twelfth connection (12) of the negative charge pump (LPMB) or voltage converter (SVMB) for quickly extracting the stored charge carriers and the eighth connection (8) of the fourth transistor (T4). The seventh transistor (T7) is controlled by the control device (ST) via the seventh control connection (G7) of the seventh transistor (T7).

The fourth transistor (T4) is also connected via its eighth connection (8) to the twenty-third connection (23) of the eleventh transistor (T11). This eleventh transistor (T11) is the one in the example 16 now connected to the negative supply voltage (GND) with its twenty-fourth connection (24). The eleventh transistor (T11) therefore bridges the negative charge pump (LPMB) or voltage converter (SVMB) for quickly extracting the stored charge carriers when it is switched on by the control device (ST). In order not to short-circuit the negative charge pump (LPMB) for quickly sucking out the stored charge carriers, the seventh transistor (T7) must then be blocked by the control device (ST) when the eleventh transistor (T11) is electrically switched on by the control device (ST). . However, the eleventh transistor (T11) must be blocked if the seventh transistor (T7) is switched on by the control device (ST). The seventh transistor (T7) and the eleventh transistor (T11) thus represent a fourth analog multiplexer which is controlled by the control device (ST). The eleventh transistor (T11) is controlled by the control device (ST) via the eleventh control connection (G11) of the eleventh transistor (T11).

Figure 17

17 equals to 16 with the difference that the charge pumps (LPPB, LPPA, LPMA, LPMB) or voltage converters (SVPA, SVPB, SVMA, SVMB) are supplied from a fifth supply voltage source (VCC5) and for operation as a lamp in a lighting device, the supply is supplied directly from one sixth supply voltage source (VCC6) and ground (GND). The sixth supply voltage source (VCC6) is preferably the output of a sixth voltage regulator (SR6) for providing the sixth supply voltage (VCC6). The fifth supply voltage source (VCC5) is preferably the output of a fifth voltage regulator (SR5) for providing the fifth supply voltage (VCC6). When using the first LED (LED1) as a light source for lighting purposes, the first light-emitting diode (LED1) is preferably supplied in quasi-continuous operation (QDB) from the sixth positive supply voltage (VCC6) and the sixth negative supply voltage (GND6). When used in pulsed operation (GPB), the first LED (LED1) is preferably supplied from the fifth supply voltage source (VCC5) and the fifth negative supply voltage source (GND5). For example, the output voltage of the sixth voltage regulator (SR6) at its outputs (VCC6, GND6) can be the same as the forward voltage of the first LED (LED1).

For example, the sixth voltage regulator (SR6) is intended to provide the sixth positive supply voltage (VCC6) and the sixth negative supply voltage (GND6).

For example, the fifth voltage regulator (SR5) is intended to provide the fifth positive supply voltage (VCC5) and the sixth negative supply voltage (GND5).

The output voltage of the fifth voltage regulator (SR5) should preferably be close to the on-board voltage (e.g. 12V) of a motor vehicle at its outputs (VCC5, GND5).

Figure 18

1. a. der direkten Energieversorgung aus einer dritten positiven Versorgungsspannungsquelle (VCC3) und einer vierten positiven Versorgungsspannungsquelle (VCC4) für den Betrieb der ersten LED (LED1) als Leuchtmittel einer Beleuchtungsvorrichtung im Quasidauerbetrieb (QDB) einerseits und
2. b. der direkten Energieversorgung aus einer ersten positiven Versorgungsspannungsquelle (VCC1) und einer zweiten positiven Versorgungsspannungsquelle (VCC2) für den gepulsten Betrieb (GPB) als gepulste LED (LED1) andererseits

umgeschaltet werden kann. In dieser Konfiguration des Vorschlags sind also keine Ladungspumpen (LPPA, LPPB, LPMA, LPMB) oder Spannungsregler (SVPA, SVPB, SVMA, SVMB) neben dem ersten Spannungsregler (SR1) und dem zweiten Spannungsregler (SR2) bevorzugt vorgesehen.shows an exemplary modified H-bridge (H) for use in a device according to. 15 and in modification of the 3 . In contrast to the H-bridge 3 can be the H-bridge (H). 18 and the first LED (LED1) can now be used both for the emission of optimized light pulses (LP) in pulsed operation (GPB) and for the optimized light emission for lighting purposes in quasi-continuous operation (QDB) by means of a first analog multiplexer (T9 , T5) and second analog multiplexer (T8, T12) between

1. a. the direct energy supply from a third positive supply voltage source (VCC3) and a fourth positive supply voltage source (VCC4) for the operation of the first LED (LED1) as a lamp of a lighting device in quasi-continuous operation (QDB) on the one hand and
2. b. the direct energy supply from a first positive supply voltage source (VCC1) and a second positive supply voltage source (VCC2) for pulsed operation (GPB) as a pulsed LED (LED1) on the other hand

can be switched. In this configuration of the proposal, no charge pumps (LPPA, LPPB, LPMA, LPMB) or voltage regulators (SVPA, SVPB, SVMA, SVMB) are preferably provided in addition to the first voltage regulator (SR1) and the second voltage regulator (SR2).

The first supply voltage (VCC1) is preferably the output of a first voltage regulator (SR1).

The second supply voltage (VCC2) is again preferably the output of a second voltage regulator (SR2).

The third supply voltage (VCC3) is again preferably the output of a third voltage regulator (SR3).

The fourth supply voltage (VCC4) is again preferably the output of a fourth voltage regulator (SR4).

The negative supply voltage in the example is: 18 the negative overall supply voltage (GND) is used.

Preferably, the first light-emitting diode (LED1) is supplied in quasi-continuous operation (QDB) when using the first LED (LED1) as a light source for lighting purposes from the third and fourth supply voltages (VCC3, VCC4). When used in pulsed operation (GPB), the first LED (LED1) is preferably supplied from the first and second supply voltage (VCC11, VCC2). For example, the output voltage of the first and second voltage regulators (SR1, SR2) at their outputs, the first and second supply voltage (VCC1, VCC2), are in the magnitude of the forward voltage of the first LED (LED1), while the output voltage of the third and fourth voltage regulator (SR3, SR4) at its outputs, the third and fourth supply voltage sources (VCC3, VCc4), each preferably close to the board mains voltage (e.g. 12V) of a motor vehicle. Please note that there are no longer any analog multiplexers in the negative branches of the half bridge, since an increase in the magnitude of the negative total supply voltage (GND) is not provided here.

Very particularly preferably, the control device (ST) now supplies a reference voltage as a voltage at the second control connection (G2) of the second transistor (G2) when it is to be switched on, so that the second transistor (T2) works as a transistor current source in the switched-on state. This is particularly advantageous if this happens when the first LED (LED1) is operated in quasi-continuous operation (QDB) as a lamp for lighting purposes. This controls the amount of energy that is permanently converted in the first LED (LED1). The fourth and third voltage regulators (SR3, SR4), which generate the third and fourth supply voltages (VCC3, VCC4), can then be designed as switching regulators, while the control losses in the second transistor (T2) are minimized in this quasi-continuous operation and thus the second Transistor (T2) only heated slightly. When developing the proposal, it was recognized that it is advantageous to generate the positive supply voltage (VCC3, VCC4) for supplying the first LED (LED1) in quasi-continuous operation (QDB) in a switching regulator as a voltage regulator (SR3, SR4). and at the same time regulate the current in quasi-continuous operation (QDB) through the second transistor (T2) as a current source transistor.

In the example of the 18 The pulsed current for pulsed operation (GPB) is also regulated. For this purpose, the control device (ST) also supplies a reference voltage when the first LED (LED1) is switched off as a voltage at the fourth control connection (G4) of the fourth transistor (G4) if this is to be switched on to switch off the first LED (LED1) more quickly, so that the fourth transistor (T4) also works as a power source when switched on. This reliably prevents the first LED (LED1) from being overloaded if, for example, the second positive supply voltage (VCC2) has a voltage peak in the control range of the fourth transistor (T4) for whatever reason.

Figure 19

19 shows the simplest variant with a supply from a common voltage source with a basic supply voltage (VCC), which can be, for example, the voltage supply from the board network of a motor vehicle. A third voltage regulator (SR3) generates a third supply voltage (VCC3) from the basic supply voltage (VCC). A second voltage regulator (SR2) generates a second supply voltage (VCC2) from the basic supply voltage (VCC). The second analog multiplexer already described above consisting of the eighth transistor (T8) and the twelfth transistor (T12) switches between the third supply voltage (VCC3) and the second supply voltage (VCC2) depending on the two control signals (G13, G12). These two control signals are generated by the control unit (ST) together with the control signals (G1, G2, G3, G4) for the H-bridge control of the H-bridge (H).

The third supply voltage (VCC3) is intended for quasi-continuous operation (QDB), in which the first LED (LED1) is used as a light source of a lighting device, for example a vehicle headlight (SW). The third supply voltage (VCC3) is used in the example 19 supplied via the switched on twelfth transistor (T12) and the switched on third transistor (T3) in this quasi-continuous operation (QDB). In this quasi-continuous operation (QDB), the LED current is dissipated via the switched-on second transistor (T2). If necessary, the second transistor (T2) can again be operated as a current source by the control device (ST) by the control unit using a reference voltage on the control line (G2) of the second transistor (T2). In this state, the eighth transistor (T8) and the first transistor (T1) as well as the fourth transistor (T4) are blocked.

The second supply voltage (VCC2) is intended for pulsed operation (GPB). The magnitude of the voltage value of the second supply voltage (VCC2) is preferably above the magnitude of the voltage value of the third supply voltage (VCC3).

If the first LED (LED1) is to be switched on quickly in pulsed operation (GPB), the eighth transistor (T8) and the third transistor (T3) and the second transistor (T2) are opened. The second transistor (T2) can, if necessary, be operated again as a power source during this switch-on process. The twelfth Transistor (T12), the fourth transistor (T4) and the first transistor (T1) are switched off in this operating state of the H-bridge.

If the first LED (LED1) is to be switched off again quickly in pulsed operation (GPB), the first transistor (T1) and the fourth transistor (T4) are opened. The fourth transistor (T4) can, if necessary, be operated as a power source again during this switch-off process in order to avoid overloading the first LED (LED1). The twelfth transistor (T12), the eighth transistor (T8), the third transistor (T3) and the second transistor (T2) are switched off or are currently switching off in this operating state of the H-bridge (H).

Figure 20

20 equals to 19 with the difference that the eighth transistor (T8) has been omitted. The analog multiplexer for switching the supply voltage between the third supply voltage (VCC2) and the second supply voltage (VCC2) is therefore no longer as in 19 placed on the H-bridge (H), but became part of the H-bridge (H) by arranging the twelfth transistor (T12) in parallel with the third transistor (T3). In this example, the analog multiplexer consists of the third transistor (T3) and the twelfth transistor (T12).

The third supply voltage (VCC3) is again intended for quasi-continuous operation (QDB), in which the first LED (LED1) is used as a light source of a lighting device, for example a vehicle headlight (SW). The third supply voltage (VCC3) is used in the example 19 supplied via the switched on twelfth transistor (T12) in this quasi-continuous operation (QDB). In this quasi-continuous operation (QDB), the LED current is dissipated via the switched-on second transistor (T2). If necessary, the second transistor (T2) can again be operated as a current source by the control device (ST) by the control unit using a reference voltage on the control line (G2) of the second transistor (T2). In this state, the third transistor (T3) and the first transistor (T1) as well as the fourth transistor (T4) are blocked.

The second supply voltage (VCC2) is again intended for pulsed operation (GPB). The magnitude of the voltage value of the second supply voltage (VCC2) is preferably above the magnitude of the voltage value of the third supply voltage (VCC3).

If the first LED (LED1) is to be switched on quickly in pulsed operation (GPB), the third transistor (T3) and the second transistor (T2) are opened. The second transistor (T2) can, if necessary, be operated again as a power source during this switch-on process. The twelfth transistor (T12), the fourth transistor (T4) and the first transistor (T1) are switched off in this operating state of the H-bridge (H).

If the first LED (LED1) is to be switched off again quickly in pulsed operation (GPB), the first transistor (T1) and the fourth transistor (T4) are opened. The fourth transistor (T4) can, if necessary, be operated as a power source again during this switch-off process in order to avoid overloading the first LED (LED1). The twelfth transistor (T12), the third transistor (T3) and the second transistor (T2) are switched off or are currently switching off in this operating state of the H-bridge.

Figure 21

21 shows a particularly simple variant of the proposed device. The light source, the first LED (LED1), is supplied with electrical energy by means of an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4). The light source, the first LED (LED1), is connected to a first connection, the cathode (K) of the first LED (LED1), to the output of the first half bridge (HB1: T1, T2). The light source, the first LED (LED1), is connected to a second connection, the anode (A) of the first LED (LED1), to the output of the second half bridge (HB2: T3, T4). The first half bridge (HB1: T1, T2) and the second half bridge (HB2: T3, T4) are provided with a common positive supply voltage, the first positive supply voltage (VCC1), and with a single common negative supply voltage, the reference potential (GND), supplied with electrical energy, which can be passed on to the light source, the first LED (LED1). An exemplary first voltage regulator (SR1) generates the first positive supply voltage (VCC1) from the total positive supply voltage (VCC). This can also be a linear regulator. In this example, the first positive supply voltage (VCC1) as the output voltage of the voltage regulator (SR1) is preferably dependent on whether the state of the entire system is in quasi-continuous operation (QDB). or in pulsed operation (GPB) to emit light pulses for measurement purposes or for data transmission.

Figure 22

The state diagram of the 22 corresponds to the state diagram of the 9 , but the state diagram is now for the operation of the exemplary modified H-bridge (H). 16 to 21 was modified.

The state diagram is used in an exemplary context with the 20 and 21 , described as possible forms of the proposed H-bridge (H).

The switching states of the transistors (T1, T2, T3, T4, T12) are monitored and controlled by the control device (ST). If necessary, the entire device has measuring equipment (HCV, HCl1, HCl2, HCl3, HCl4, HCl12) in order to be able to draw conclusions about the switching state of the transistors (T1, T2, T3, T4, T12). These measuring devices either forward their measurement results to the said computer system (µC), which controls the control device (ST), where the measurement results are evaluated, and/or forward the measurement results directly to the control device (ST), whose output signals then at least partially depend on these measurement results depend. The entire device can have measuring means for recording the partial currents in the half bridges (HB1, HB2) of the H-bridge (H).

In particular, it can have a first measuring device (Rs1) in the first half-bridge (HB1: T1, T2), which detects the electrical current through a part of the first half-bridge (HB1: T1, T2) and converts it into an electrical voltage, which then by a measuring device not shown in the figures into a measured value for this electrical current, which is then sent to the computing unit (µC) or the control unit (ST) for controlling the H-bridge or the charge pumps (LPPA, LPPB, LPMA, LPMB) or the voltage converter (SVPA, SVPB, SVMA, SVMB) or the voltage regulator (SR1, RS2) or the control unit (ST) is made available.

In particular, it can have a second measuring device (Rs2) in the second half-bridge (HB2: T3, T4), which detects the electrical current through a part of the second half-bridge (HB2: T3, T4) and converts it into an electrical voltage, which then by a measuring device not shown in the figures into a measured value for this electrical current, which is then sent to the computing unit (µC) or the control unit (ST) for controlling the H-bridge or the charge pumps (LPPA, LPPB, LPMA, LPMB) or the voltage converter (SVPA, SVPB, SVMA, SVMB) or the voltage regulator (SR1, RS2) or the control unit (ST) is made available.

The H-bridge (H) can preferably be operated in a first intermediate state (Z). In this intermediate state, the first transistor (T1) is switched off, the second transistor (T2) is switched off, the third transistor (T3) is switched off, the fourth transistor (T4) is switched off and the twelfth transistor (T12) is switched off. The intermediate state (Z) is intended for quasi-continuous operation (QDB) when the first LED (LED1) is used as a light source of a lighting device, e.g. a headlight of a motor vehicle (motor vehicle), for lighting purposes.

The H-bridge (H) can preferably be operated in an intermediate state (PZ) of pulsed operation (GPB). Even in this intermediate state (PZ) of pulsed operation (GPB), the first transistor (T1) is switched off, the second transistor (T2) is switched off, the third transistor (T3) is switched off, the fourth transistor (T4) is switched off and the twelfth transistor ( T12) switched off. However, the intermediate state (PZ) of pulsed operation (GPB) is intended for pulsed operation (GPB) when the first LED (LED1) is used as a measuring device of a sensor device, for example a distance measuring device of a motor vehicle, for example for distance measuring purposes. The distinction between the first intermediate state (Z) and this intermediate state (PZ) of pulsed operation (GPB) is important if only one H-bridge with four transistors (T1, T2, T3, T4) according to. 1 and only one voltage regulator should be used (see 21 ). In this case, the voltage at the fifth connection (5) of the third transistor (T3) and at the first connection (1) of the first transistor (T1) must be in any direction between pulsed operation (GPB) and quasi-continuous operation (QDB). Example of the 20 must first be reloaded from the voltage value of a first supply voltage (VCC1) to the voltage value of a third supply voltage (VCC3). This typically requires some time as the voltage regulator (SR2) first has to regulate the new supply voltage. Therefore it is better to work with two voltage regulators, a first voltage regulator (SR1) and a third voltage regulator (SR3) which is the first supply supply voltage (VCC1) and the third supply voltage (VCC3) and then switch between these supply voltages (VCC1, VCC3) using an analog multiplexer (T3, T12), which is preferably part of the H-bridge (H).

The second overall state, the “PAn” state, is assumed in light pulse operation for no longer than a switch-on time (τ _pp ), which is preferably smaller than the charge carrier lifespan (τ), since the control is based on the technical teaching proposed here with an increased operating voltage In this light pulse operation, the light-emitting diodes flow in the direction of flow. The third overall state, the “POff” state, is also assumed to be no longer than a clearing time (τ _pn ), whereby the clearing time (τ _pn ) is smaller than the charge carrier lifetime (τ), since the control is based on the technical method proposed here Teaching with an increased operating voltage in this light pulse operation takes place in the reverse direction of the light-emitting diodes. It is particularly important that the space charge zone of the light-emitting diodes must not be emptied. The switch-on time (τ _pp ) must be smaller than the charge carrier lifetime (τ).

In quasi-continuous operation (QDB), the H-bridge (H) can change from the intermediate state (Z) to the “BAn” state (BAn) and back. This change is controlled by the control device (ST). In this “BAn” state (BAn), the first LED (LED1) is energized more or less permanently as a light source of a lighting device. The first transistor (T1) and the fourth transistor (T4) and the third transistor (T3) are turned off. The twelfth transistor (T12) connects the first LED (LED1) to the first voltage source (SR1) and thus to the first supply voltage. The first voltage source (SR1) is therefore designed for continuous operation. Its time constants can be longer, while it must be able to withstand the resulting power loss for a longer period of time. The second transistor (T2) is also on. However, it preferably works as a power source. In this case it is able to control the energy consumption by the first LED because it can then regulate the current through the first LED (LED1). When developing the proposal, it was recognized that it is particularly advantageous if the proposed H-bridge includes a current source or a current source transistor (T2).

In quasi-continuous operation (QBD), the H-bridge (H) can change from the intermediate state (Z) to the optional state “K” and back. In quasi-continuous operation (QBD), the H-bridge (H) can change from the “POff” state (POff) to the optional “k” state (k) and back. In pulsed operation (GPB), the H-bridge (H) can also change from the “POff” state (Paus) to the optional “k” state (k). In pulsed operation (GPB), the H-bridge (H) can also change from the intermediate state for pulsed operation (PZ) to the optional “k” state (k) and back. These changes are controlled by the control device (ST). In this state (K), the first LED (LED1) as a light source of a lighting device is more or less permanently discharged. The “k” state (k) is optional because no current flows through the first LED (LED1) even in the intermediate state (Z). The “k” state (k) can be realized in two different ways. The basic principle is that the voltage drop across the first LED (LED1) is brought to zero. This requires shorting the first LED (LED1). This happens in the example of 20 preferably via one of the supply voltages, either the second positive supply voltage (VCC2) or the negative supply voltage (GND).

In the first case, in the example, 20 the first transistor (T1) and the third transistor (T3) are switched on in an electrically conductive manner. The fourth transistor (T4) and the second transistor (T3) and the twelfth transistor (T12) therefore do not block or conduct the electrical current. In this case, the short circuit of the first LED (LED1) occurs via the second positive supply voltage (VCC2).

In the second case, in the example, 20 the second transistor (T2) and the fourth transistor (T4) are switched on in an electrically conductive manner. The first transistor (T1) and the third transistor (T3) and the twelfth transistor (T12) therefore do not block or conduct the electrical current. In this case, the short circuit of the first LED (LED1) occurs via the negative supply voltage (GND).

In quasi-continuous operation (QDB), the H-bridge (H) can change from the intermediate state (Z) to the optional “BOff” state (BOff) and back. This change is controlled by the control device (ST). In this “construction” state (BAus), the first LED (LED1) is operated more or less permanently in the reverse direction as the light source of a lighting device. The “BOff” state (BOff) is optional because even in the intermediate state (Z), no current flows through the first LED (LED1) and it therefore cannot light up permanently. The “POff” state is achieved when the first LED (LED1) is operated in the reverse direction. For this purpose, the “POff” state refers to the 20 the first transistor (T1) in the fourth transistor (T4) is switched on. The twelfth transistor (T12) and the third transistor (T3) and the second transistor (T2) are exemplary based on the 20 switched off.

The “PZ” state and the intermediate state (Z) form more or less a unit, which is indicated as a dashed bubble.

A transition from the “BAus” state to the “PZ” state is also optionally possible. Direct transitions from the “k” state to the “BAn”. State or back are preferably not allowed in order to exclude cross currents at this point. Direct transitions from the “BOff” state to the “BAn” state or back are also preferably not permitted in order to exclude cross currents at this point.

In quasi-continuous operation (QDB), the H-bridge (H) can change from the intermediate state (Z) to the intermediate state (PZ) for pulsed operation (GPB) and thus to pulsed operation (GPB) and back. This change from pulsed operation (GPB) to quasi-continuous operation (QDB) and back is the example 21 associated with a recharging of the nodes to the new operating voltage.

• Zum Ersten werden die ausschaltenden Transistoren (in dem Beispiel der zweite Transistor T2) schneller durch den einschaltenden Transistor (In dem Beispiel der 20 der zweite Transistor (T2) und der dritte Transistor (T3)) schnell entladen. In dem Beispiel der 20 nimmt der erste Transistor (T1) dadurch auch einen Großteil des Stromes auf, den der ausschaltende zweite Transistor (T2) sonst noch in die erste LED (LED1) liefern würde. In dem Beispiel der 20 nimmt der vierte Transistor (T4) dadurch auch einen Großteil des Stromes auf, den der ausschaltende dritte Transistor (T3) sonst noch in die erste LED (LED1) liefern würde.

In pulsed operation (GPB), the H-bridge can change its state from the intermediate state (PZ) for pulsed operation (GPB) to the “PAn” state. In this state (PAn), the first LED (LED1) should be switched on as quickly as possible. For this purpose, the first LED (LED1) in this state is connected as quickly as possible to the highest possible operating voltage in order to flood the PN junctions of the first LED (LED1) with charge carriers as quickly as possible. In the example of 20 This means that of the transistors (T1, T2, T3, T4, T12), which were previously all switched off, the third transistor (T3) and the second transistor (T2) are now switched on. The change from the “PAn” state to the intermediate state (PZ) for pulsed operation (GPB) is theoretically possible, but preferably not planned. Rather, the H-bridge preferably changes to an intermediate state (PQZ) with a maximization of the cross current in order to remove the charge carriers from the H-bridge and the first LED (LED1) as quickly as possible. Here the first LED (LED1) and the transistors that switch off (in the example the 20 the second transistor (T2) and the third transistor (T3)) are cleared of charge carriers as quickly as possible. Since the transistors that turn off (in the example the 20 Since the second transistor (T2) and the third transistor (T3)) need some time to switch off during the transition from the “PAn” state to the “QPZ” state, it makes sense to allow a cross current to flow through the H-bridge which contains these charge carriers removed. This achieves two effects:

• Firstly, the turning off transistors (in the example the second transistor T2) are made faster by the turning on transistor (in the example the 20 the second transistor (T2) and the third transistor (T3)) discharge quickly. In the example of the 20 As a result, the first transistor (T1) also absorbs a large part of the current that the second transistor (T2), which switches off, would otherwise supply to the first LED (LED1). In the example of the 20 As a result, the fourth transistor (T4) also absorbs a large part of the current that the third transistor (T3), which switches off, would otherwise supply to the first LED (LED1).

Secondly, this leads to a faster polarity reversal and thus discharge of the first LED (LED1). It therefore makes sense if the permissible cross-current while switching off the switching-off transistors (in the example the 20 the second transistor (T2) and the third transistor (T3)) are maximized during the transition from the “PAn” state to the “PAn” state via the “QPZ” intermediate state described here up to thermal permissibility. This means that the transition from the “PAn” state to the “PAn” state preferably takes place via the “PQZ” state described here, whereby when entering the “PAn” state there is a short-term cross current in contrast to the “PZ” -State that is greater than the cross current in the “PZ” state or in the “POff” state is permitted. In order to be able to achieve the mentioned cross-current maximization at the beginning in the “POff” state, it is particularly advantageous to be able to record the essential parameters of the energy loss in the transistors (T1, T2, T3, T4).

Since the behavior of the transistors (T1, T2, T3, T4) is usually known, it makes sense to calculate the respective energy output based on the voltage drops. The voltage drop across the first LED (LED1) can usually be used to determine the axial current of the H-bridge (H) through the first LED (LED1). In this context, it can make sense to measure the current precisely using two shunt resistors (RS1, RS2), for example in the ground lines of the H-bridge (H) (see 23 ) and not just from the voltage drop across the transistors (T1, T2, T3, T4). Since the function of the transistors (T1, T2, T3, T4) is different, the first transistor (T1) of the H-bridge (H) is typically not the same as the third transistor (T3) of the H-bridge (H) and the the second transistor (T2) of the H-bridge (H) is typically not the same as the fourth transistor (T4) of the H-bridge (H). The exact dimensions The person skilled in the art will determine this through calculation and simulation, taking into account the first LED used (LED1) and the layout of the typically used printed circuit. The cross currents are preferably regulated by regulating the voltage of the voltage regulators (SR1, SR2) and regulating the switch-on and switch-off times of the transistors (T1, T2, T3, T4). The actual variables of such a control can be the voltage across the first LED (LED1), the voltage drops across the transistors (T1, T2, T3, T4) and, if necessary, additional measured values for the current through the respective half bridges (HB1: T1, T2; HB2: T3, T4) (e.g. the voltage drop across shunt resistors (Rs1, Rs2)) as well as the voltage drops across the transistors (T1, T2, T3, T4) and the first LED (LED1).

Furthermore, it can make sense to provide the transistors (T1, T2 / T3, T4) for pulsed operation (GPB) and the transistors (T2, T3) for quasi-continuous operation (QDB) with one or more thermocouples that Monitor transistors during operation. Their parameters can also be used for the control.

The “POff” state describes a further overall state of the device, in which the second transistor (T2) and the third transistor (T3) and the twelfth transistor (T12) (example based on 20 ) are blocked. The first transistor (T1) and the fourth transistor (T4) are conductive. The LED (LED1) does not emit any light and is electrically biased in the reverse direction.

Figure 23

23 equals to 20 with the difference that two shunt resistors, a first shunt resistor (Rs1) and a second shunt resistor (Rs2), are shown here. These shunt resistors (Rs1, Rs2) can be used to determine the current through the relevant half bridge (HB1, HB2) of the H-bridge (H) by means of the voltage drop across these shunt resistors (Rs1, Rs2).

In order to draw conclusions about the current through the second transistor (T2), the voltage between the fourth connection (4) of the second transistor (T2) and the negative supply voltage (GND) is preferably detected. If the value of the first shunt resistor (Rs1) is known, the current through the second transistor (T2) results from this detected voltage.

In order to draw conclusions about the current through the fourth transistor (T4), the voltage between the eighth connection (8) of the fourth transistor (T4) and the negative supply voltage (GND) is preferably detected. If the value of the second shunt resistor (Rs2) is known, the current through the fourth transistor (T4) results from this detected voltage.

The measured values recorded in this way are particularly preferably used to regulate the cross currents, particularly in the "QPZ" state or at the beginning of the "POff" state, or to stabilize the color temperature of the radiation of the first LED (LED1) in the "BAn" state in quasi-continuous operation (QDB).

Figure 24

equals to 15 with the exemplary difference that an internal construction of the H-bridge, for example 15 corresponds and where the energy reserves (C_LPPB, C_LPPA, C_LPMB, C_LPMA) of the charge pumps (LPPB, LPPA, LPMB, LPMA) are shown.

Instead of charge pumps (LPPB, LPPA, LPMB, LPMA), voltage step-up converters (SVPB, SVPA, SVMB, SVMA) or similar can also be used, which increase the amount of the supply voltage compared to the amount of the relevant positive or negative supply voltage. The average value of the voltage between the positive and negative supply voltage is used as a reference for the increase in amount. The energy reserves of the voltage converters (SVPB, SVPA, SVMB, SVMA) can also be inductors (L_SVPB, L_SVPA, L_SVMB, L_SVMA) or similar.

Figure 25

equals to 25 with the exemplary difference that, for example, a first H-bridge control unit (HC1) is provided, which monitors the light emission of the light source, here the exemplary first LED (LED1), ver measures and thus readjusts the control, in particular by adjusting the charge pump voltage of the charge pumps (LPPB, LPPA, LPMB, LPMA) or voltage converters (SVPB, SVPA, SVMB, SVMA) or the voltage regulators (SR1, SR2) in the form of the bias voltage of the energy reserves (C_LPPB, C_LPPA, C_LPMB, C_LPMA) of the charge pumps (LPPB, LPPA, LPMB, LPMA) or by adjusting the voltage converter voltage of the voltage converters (SVPB, SVPA, SVMB, SVMA) e.g. in the form of the no-load current through the energy reserves (L_SVPB, L_SVPA , L_SVMB, L_SVMA) of the voltage converters (SVPB, SVPA, SVMB, SVMA), if these energy reserves are inductors, and by varying the dwell times in the states “PAN”, “PAUS” and “PQZ”. In addition, the current through the first LED (LED1) can be detected via shunt resistors (Rs1, Rs2) and depending on the state (PAN, PAUS, PQZ, Z) of the H-bridge (H) in pulsed operation (GPB). be managed. In quasi-continuous operation (QDB), in which the first LED (LED1) is operated, for example, as a lamp of a headlight (SW), the brightness of the first lamp (LED1) can be detected and controlled by the first photodiode (PD1). For this purpose, the control device (ST) controls the H-bridge (H) in such a way that the first LED (LED1) is preferably controlled with a PWM modulation. In the example, their amplitude is 23 by the voltage value of the third supply voltage (VCC3) compared to the negative supply voltage (GND), essentially up to voltage losses through the turn-on resistances of the transistors (T2, T12) and the shunt resistor (Rs1). With this voltage amplitude and the average temporal switch-on density (e.g. the duty cycle), two parameters are then available that make it possible to adjust the color temperature and brightness. The measurement of the light emission of the light source, the first LED (LED1), can preferably be carried out by detecting scattered light (SL) that falls on the first photodiode (PD1). Since light from outside typically penetrates into the headlight (SW) through the optics (OP), it is advisable to use the modulation of the light, for example by the applied PWM, to separate the extraneous light signal from the useful signal in the H-bridge control unit (HC1) or in the computing unit (µC) by signal processing. This separation by means of signal processing can be achieved, for example, by forming a cross-correlation between the received signal of the photodiode (PD1) or a signal derived therefrom, for example by filtering, and a synchronization signal (sync) corresponding to the transmitted signal of the lamp. It is then useful if, for example, the computing unit (µC) samples the first measurement signal (MS1) of the first H-bridge control unit (HC1) and multiplies it with the sampled control signal for the PWM modulation. Since the PWM frequency is known, it is then advisable to remove all frequencies higher than half the PWM frequency from the spectrum using a low pass. A direct signal then typically remains, for example for the brightness of the first LED (LED1).

Figure 26

equals to 25 with the exemplary difference that, for example, further lamps (LED2...n) are provided which emit light in an unpulsed manner for lighting purposes, with a blocked wavelength range (GWB) being masked out by a filter (F1). In the example, the device has the 26 via a further reflector (RF2) and a second optics (OP2) for collecting and decoupling the headlight light (SWL) generated by the other lamps (LED2...n).

Figure 27

27 equals to 26 , whereby for clarification a measuring device (MV) is now shown, which allows, for example, a determination of the light transit time or other information such as the reflectivity of an object (O) from the reflected light pulses (RLP). The light pulses (LP) emitted by the first LED (LED1) are reflected by an object (O) that is not shown, for example a motor vehicle in front, and return as reflected light pulses (RLP) to the proposed device, for example a proposed headlight (SW). back. There they pass, for example, through a third optics (OP3) and a preferred third optical filter (F3), which is preferably designed to be complementary to the first optical filter (F1). This means that the first filter (F1) preferably blocks the wavelength range (VWB) used for the measurement in the spectrum of the other lamps (LED2...n) in the generated headlight light (SWL) or at least attenuates it to such an extent that there is no unnecessary additional load arises. In this respect, the first filter (F1) is optional. The first LED (LED1) preferably emits light in the wavelength range (VWB) used for the measurement. The third filter (F3) now preferentially separates the wavelength range (VWB) used for the measurement from the entire transmitted optical spectrum. The reflected light pulses (RLP) pass through the third filter (F3) preferably undamped and are detected by the measuring sensor, preferably a measuring photodiode (MD). The measuring device (MV) determines a measured variable from the signal recorded by the measuring diode (MD) and transmits this to the computer system (µC) as a third measuring signal (MS3). This measuring device (MV) can also include more than one measuring diode (MD). A particularly preferred measuring diode is from DE 10 2009 020 218 B3 known. It is particularly preferred to arrange several such measuring diodes in a diode array. The third optics (OP3) is then preferably designed so that it generates an image of the reflected light pulse (RLP) coming from the object on the diode array (MD). The control unit (ST) then generates the necessary control signals, for example according to DE 10 2008 018 718 B4 . The gate signals provided there, which switch the diodes (MD) of the diode array to be light sensitive and insensitive (in the literature these are also referred to as shutter signals) are then switched in such a way that the diodes (MD) are preferably only in the states "k","PAn","PZ",PAus" and "PQZ" can be switched sensitively. The diodes in the states "Z", "BAn" and "BAn" are particularly preferably not switched to light-sensitive, so that they are in In these states, no light is collected. In this way, distance and brightness information can be obtained for each pixel.

Figure 28

28 equals to 27 with the difference that a compensation transmitter (K) is now provided, which is controlled in a complementary manner to the first LED (LED1), whereby the regulation of the amplitude and the phase position of the control of the compensation diode (K) ensures a more or less uniform illumination of the photodiode over time (MD) is achieved. A corresponding measuring method is, for example, from EP 2 783 232 B1 known.

Figure 29

equals to 15 with the exemplary difference that, for example, a first LED (LED1a), which is controlled by an exemplary first H-bridge (H), and a second LED (LED1b), which is controlled by an exemplary second H-bridge (H '). , are provided, which opens up the possibility of emitting colored light pulses (FLP). A first LED (LED1a) is controlled by means of a first H-bridge (H) and emits light pulses (LP) and/or light pulse trains (LPF) in a first wavelength range (WB1), for example with a first color. The first H-bridge (H) is controlled by the control device (ST). A second LED (LED1b) is controlled by means of a second H-bridge (H') and also emits light pulses (LP) and/or light pulse sequences (FLP) in a second wavelength range (WB2), for example with a second color. The first wavelength range (WB1) preferably differs from the second wavelength range (WB2) at least in the spectral intensity curve of the respective LED. The first color is therefore preferably different from the second color. The second H-bridge (H') is also controlled by the control device (ST). The mixed scattered light (SL1, SL2) of the first LED (LED1a) and the second LED (LED1b) is received here, for example, by a first photodiode (PD1) and a second photodiode (PD2). The first photodiode (PD1) and the second photodiode (PD2) should have different spectral wavelength ranges (WB1, WB2), in which they are differently sensitive to the light of the first light-emitting diode (LED1) and to the light of the second light-emitting diode (LED2). This difference should be chosen so that it is possible to draw conclusions about the luminosity of the first LED (LED1a) and the second LED (LED1b). For example, it would be preferable for the first photodiode (PD1) to be exclusively sensitive to the light of the first LED (LED1a) and the second photodiode (PD2) to the light of the second LED (LED1b). The structure then makes it possible to generate colored light pulses (FLP) using light pulses (LP) from several, for example different colored light pulse sources (LED1a, LED1b), whose total intensity (total light output) remains constant for the duration of the colored light pulse (FLP) and for which only the Color, for example the color angle, is pulsed. A constancy of the total light output is understood to mean a change in the total light output within a period of the duration of the light pulse of less than 10%, while the ratio (division of the light output values) of the emitted light output in a first wavelength range (WB1) of the emitted light changes to a second Wavelength range (WB2) of the emitted light changes by more than 10% relative to each other during this period.

Figure 30

equals to 15 with the exemplary difference that it is a proposed RGB spotlight (SW) and that, for example, a first LED (LED1a), which is controlled by an exemplary first H-bridge (H), and a second LED (LED1b), which is controlled by an exemplary second H-bridge (H'), and a third LED (LED1c), which is controlled by an exemplary third H-bridge (H''), are provided, which makes it possible to emit color pulses ( FLP) and the simultaneous emission of color-specific light, for example white light, for lighting purposes in the entire RGB color spectrum.

Figure 31

equals to 25 with the exemplary difference that an exemplary structurable filter, here in the form of an LCD filter (LCD), is inserted into the beam path, for example within the optics (CL, PL), and is projected. This enables the projection of structures as a mask. For example, it may make sense to limit the measurement to certain areas.

Figure 32

equals to 25 with the exemplary difference that an exemplary micromirror array (DLP), here in the form of an LCD filter, is inserted into the beam path and modulates the light beam cross section spatially and/or temporally.

Figure 33

equals to 25 with the exemplary difference that an exemplary structurable filter, here in the form of an LCD filter (LCD), is inserted into the beam path, for example behind the optics (OP), and is projected as a shadow mask.

Figure 34

shows exemplary positions of devices according to this proposal on an exemplary motor vehicle (motor vehicle) in the form of an exemplary car. Reference is made here to the list of reference symbols.

At the front, the proposed device can be accommodated in the headlights for daytime running lights (FST1, FST2), the headlights for low beam (FAS1, FSA2), the headlights for high beam (FSF1, FSF2). The fog lights (NL1, NL2) (=fog lights) also come into question there. At the corners of the vehicle, the direction indicators (BL1, BL2) can be designed according to this proposal. Warning lights and the blue lights of rescue workers etc. can be used for positioning on the roof.

On the side, for example, warning lights (TWL1, TWL2) for vehicles in the blind spot, which are typically provided on the rear-view mirrors, come into question.

At the rear of the vehicle, the brake lights (BRL1, BRL2), the reversing lights (RFL1, RFI2), the rear fog lights (NRL1, NRL2) and the rear light (RL1, RL2) are particularly suitable for a design in accordance with this proposal.

Decorative lights (ZL1, ZL2) around the entire vehicle can be considered for a design in accordance with this suggestion.

Figure 35

shows an exemplary communication between a vehicle (motor vehicle) that is equipped with a proposed headlight (SW) and a device in the traffic infrastructure, here an example of a traffic light (AMP). As an example, it is assumed that the right front headlight of the vehicle is designed as proposed and can emit pulsed light. The vehicle (motor vehicle) is then able to send information to the transport infrastructure device, here for example a traffic light (AMP), for example by modulating the pulse interval in pulsed operation (GPB). The traffic light receives this pulse sequence through an optical receiver. This can, for example, cause the control of the traffic light (AMP) to change the state of the traffic light (AMP), for example jumping from red to green at night, if there is no other request. Conversely, the traffic light (AMP) can also send data to the vehicle using an optical pulse train. If the pulses are short enough and not too frequent and the spectrum generated by the pulsation does not have any modulation frequencies that are perceptible to the human eye, then these are no longer easily perceptible to a human observer. The proposed devices should therefore have quasi-continuous operation as preferably shorter than 10µs, better shorter than 3µs, better shorter than 2µs, better shorter than 1µs, better shorter than 500ns, better shorter than 200ns, better shorter than 100ns, better shorter than 50ns, better shorter than 20ns, better shorter than 10ns, better shorter than 5ns, better shorter than 4ns, better shorter than 2ns, better shorter than 1ns, better shorter than 500ps, better shorter than 200ps, better shorter than 100ps, better shorter than 50ps, better shorter than 20ps, better shorter than 10ps, better shorter than 5ps, better shorter than 2ps, better shorter than 1ps and then return to quasi-continuous operation. In quasi-continuous operation, the energy supply preferably comes from voltage converters with a preferably lower maximum light output than in pulsed operation with a preferably massively increased pulsed light output and a preferred energy supply from charge pumps.

Figure 36

shows an exemplary communication between a first vehicle (vehicle) and a second vehicle (vehicle 2), each of which is equipped with a proposed headlight (SW), whereby these headlights (SW) a) the distances to one another a1) active and a2) determine passively and b) exchange data.

1. 1. als Beleuchtungsvorrichtung
2. 2. als Messvorrichtung (z.B. zur Messung des Abstands)
3. 3. als Sender einer Datenschnittstelle

For this purpose, for example, the first vehicle (Kfz1) can be used using a proposed device (e.g 28 ) determine the distance to the second vehicle in front (vehicle 2). At the same time, the first vehicle (vehicle 1) can use the light pulses (LP) of these measurement signals to simultaneously transmit information to the second vehicle (vehicle 2) in front, such as its own speed, the measured distance and the acceleration status (brake pedal pressed or not, etc.) or also to communicate one's own position, which was determined in another way. Other data transfers are also conceivable. It is therefore proposed to use the headlight of the first vehicle (Kfz1) in three ways

1. 1. as a lighting device
2. 2. as a measuring device (e.g. for measuring the distance)
3. 3. as a transmitter of a data interface

Particularly preferably, at least one LED (LED1) of the headlight (SW) is used simultaneously for these three purposes.

In addition, an LED (LED1) within the headlight (SW) can then also be used as a receiver. However, this requires that no light is emitted during reception in order to avoid overloading. In this case, the LED (LED1) would be used four times.

Figure 37

36 shows the H-bridge of 1 , where the first positive supply voltage (VCC1) of the H-bridge is 1 and the second positive supply voltage (VCC2) of the H-bridge 1 here are equal to the positive total supply voltage (VCC) and where the first negative supply voltage (GND1) of the H-bridge is 1 and the second negative supply voltage (GND2) of the H-bridge 1 here are equal to the negative total supply voltage (GND).

Figure 38

38 shows the actual H-bridge (H) with the first half-bridge (HB1) from the series connection of the first transistor (T1) and the series connection of the second transistor (T2) as well as with the second half-bridge (HB2) from the series connection of the third transistor (T3 ) and the series connection of the fourth transistor (T4).

Figure 39

39 equals to 27 with the difference that instead of a single sensor (MD), a two-dimensional arrangement of time-controllable light-sensitive sensors (TOFIMG) is now used for the detection of the light pulses (LP) or colored light pulses (FLP). In this context, here are the scriptures DE 10 2008 018 718 B4 and DE 10 2009 020 218 B3 referred.

glossary

LED

Light-emitting diode or light-emitting diode. In the sense of this disclosure, it can also be an interconnection of several light-emitting diodes and other components which, as a group, have the same function of light emission when a voltage is applied in the direction of flow as a single light-emitting diode, whereby the forward voltage of such a group can differ . This is preferably a serial connection (LED chain) of individual light-emitting diodes. For the purposes of this disclosure, LEDs also include laser diodes.

LIDAR

(Abbreviation for light detection and ranging), also known as ladar (laser detection and ranging), is a method very similar to radar for optical distance and speed measurement as well as for remote measurement of atmospheric parameters. Instead of radio waves in radar, laser beams are used.

Flash LIDAR

With flash lidar, a single light pulse is emitted and the time of flight (TOF) of this light pulse is measured from the transmitter via the reflection on an object (O) back to a receiver in a direction-resolved manner, for example with a so-called TOF camera or time-of-flight camera. This allows an environment map (UK) to be created without the need for moving parts.

TOF distance measurement

With TOF distance measurement, the transit time of a light pulse (LP) or colored light pulse (FLP) is measured and a distance (d, d1, d2, d3) is calculated from this given the known speed of a radiation packet.

3D imaging

3D imaging is the creation of an image that, on the one hand, contains brightness information per camera pixel, as with a normal camera, but on the other hand also includes distance information per camera pixel. Such cameras preferably work with time-of-flight measurement (TOF cameras). In connection with such light transit time measurement, for example: DE 10 2009 020 218 B3 known.

Optical Data Link

An optical data link is a data connection that is established using a modulated light beam as a transmission medium.

Car2Car Communication

Car2Car communication refers to data communication between two vehicles (car1, car2).

Charge pump

A charge pump is a device that is typically part of the integrated drive circuit used to drive the first LED (LED1) via the proposed H-bridge (H). A charge pump is a combination of several different electrical circuits that increase the magnitude of the voltage value or reverse the polarity of direct voltages. In the sense of this disclosure, it is about further lowering the negative supply potential (GND) or further increasing the positive supply voltage (VCC). The output voltage of a charge pump is typically a DC voltage. If the input voltage is also a DC voltage, the charge pump is a DC-DC converter. A key feature of charge pumps is that they do not require any magnetic components such as coils or transformers. Charge pumps transport the electrical charge preferably with the help of electrical capacitors and through periodic switching with switches, which can generate electrical output voltages of different levels. The procedures are similar to when water is transported with buckets from a low place to a higher place and collected there with higher potential energy. Since the first LED (LED1) is only pulsed, continuous operation is not required and an external storage capacity can be charged by the respective charge pump between the light pulses to be emitted. According to this disclosure, voltage converters can also be used instead of charge pumps.

Voltage converter

A voltage converter is a device that is typically part of the integrated control circuit with which the first LED (LED1) is controlled via the proposed H-bridge (H). Voltage converters are several different electrical circuits that increase the magnitude of the voltage value or reverse the polarity of DC voltages. In the sense of this disclosure, it is about further lowering the negative supply potential (GND) or further increasing the positive supply voltage (VCC). The output voltage of a voltage converter is typically a DC voltage. If the input voltage is also a direct voltage, the voltage converter is a direct voltage converter (DCDC converter). A DC-DC converter refers to an electrical circuit that converts a DC voltage supplied at the input into a DC voltage with a higher, lower or inverted voltage level. The implementation typically takes place using a periodically operating electronic switch and one or more energy storage devices. DC-DC converters are self-commutated power converters. In the field of electrical energy technology, they are also referred to as direct current controllers. For the purposes of this disclosure, the energy storage used to temporarily store the energy is preferably an inductor (inductive converter). Such a DC-DC converter therefore preferably also includes a coil or a converter transformer. In contrast to the capacity of a charge pump, these are difficult to integrate into an integrated circuit, which is why the charge pumps are dealt with in focus in this disclosure. In contrast, converters with capacitive storage (capacitive converters) are called charge pumps. Charge pumps are used when either - as in integrated circuits - inductors are not available, or when so little output power is required that the use of expensive coils is not worthwhile compared to cheap capacitors. If the first LED (LED1) is only pulsed, continuous operation is not required and an external storage capacity can be charged by the respective charge pump between the light pulses to be emitted. According to this disclosure, charge pumps can also be used instead of voltage converters. Voltage converters preferably deliver the electrical energy for lighting purposes with a lower voltage converter output voltage to the H-bridge and thus to the lamp (LED1) than the energy supply by the charge pumps, which, in comparison, preferably has a higher voltage difference between the lamp connections during pulsed operation (GPB). generate for a very short time. As a result, the light source (LED1) is not overloaded energetically, neither in quasi-continuous operation nor in pulsed operation. This energy is supplied in quasi-continuous operation (QDB) over a longer period of time from the voltage converters with lower electrical power and from the charge pumps in pulsed operation (GPB) over a short period of time with very high electrical power. Since the time of use of the charge pump output power is short, the energy content of the charge pump energy storage devices may be limited.

wavelength

For the purposes of this disclosure, the wavelength of an LED is understood to mean the wavelength of the unmodulated light of the LED (LED1) or the lamp. If we are talking about a wavelength of a light source, this means the center wavelength of the radiation of the light source in question (LED1).

RGB LED

An RGB LED is a group of at least three LEDs of different colors (see also LED definition above)

ADAS

ADAS stands for Advanced Driver Assistance Systems in English, which can be translated as driver assistance system. Driver assistance systems are additional electronic devices in motor vehicles that support the driver in certain driving situations. The focus here is often on safety aspects, but also on increasing driving comfort. Another aspect is improving the economy. In this disclosure, the use of the circuit technology described for controlling the light-emitting diodes of already existing lighting devices makes it possible to use them in connection with ADAS systems, for example as a distance sensor or as a source of an environment map.

IR light

IR light means infrared light. In physics, such infrared radiation (IR radiation for short, also ultra-red radiation) refers to electromagnetic waves in the spectral range between visible light and the longer-wave terahertz radiation. The spectral range between 10 ^-3 m and 7.8x10 ^-7 m (1 mm and 780 nm) is referred to as infrared, which corresponds to a frequency range of 3x1011 Hz to approx. 4x1014 Hz (300 GHz to 400 THz). corresponds.

Visible light/visible wavelength range

Visible light is the part of electromagnetic radiation that is visible to the human eye. In the electromagnetic spectrum, the range of light includes wavelengths from 380 nm to 780 nm. This corresponds to frequencies of approximately 789 THz to 384 THz. An exact limit cannot be specified because the sensitivity of the eye does not decrease abruptly at the limits of perception, but rather gradually. For purposes of this disclosure, 380 nm to 780 nm is considered the wavelength range of visible light. The ranges of infrared (wavelengths between 780 nm and 1 mm) and ultraviolet radiation (wavelengths between 10 nm and 380 nm) adjacent to visible light are also often referred to as light. This disclosure relates to light sources (LED1) that preferably emit white light. The lamps (LED1) can have laser properties.

Data link

A data link is a data connection using a carrier of electromagnetic radiation.

Headlight

For the purposes of this disclosure, a headlight is to be understood as any lamp with a light source that, among other things, emits pulsed light. In particular, a headlight within the meaning of this disclosure, in relation to a motor vehicle, is a headlight for daytime driving lights, a headlight for low beam, a headlight for high beam, an ornamental light, a direction indicator, a warning light, a warning light for vehicles in the blind spot, a brake light Reversing lights, a tail light, a fog light, a rear fog light, a warning light, a signal light, in particular a police or fire service or other emergency vehicle blue light or another yellow warning light with or without rotation and with or without a flashing function and, in relation to a rail vehicle, a driving light , an ornamental light, a warning light, a reversing light, a tail light, a warning light, a signal light. And related to other lights and application situations a street light, an advertising installation, a searchlight, a stage light or a stage spotlight, a signal light, a traffic light, an emergency light, a task light, a room light, an aisle light.

vehicles

For the purposes of this disclosure, all types of vehicles come into question: motor vehicles, trucks, motorcycles, rail vehicles, bicycles, sea vehicles of all kinds such as ships, messengers and submarines, aircraft, space vehicles, special vehicles such as caterpillar tracks and construction vehicles and construction machinery, mobile robots , industrial trucks etc.

White appearance of light

For the purposes of this disclosure, light emission is white if the color temperature is between 3000K and 7000K.

Measurement methods

Wavelength determination

lichtpulsfähig

Lichtpulsfähig ist ein Leuchtmittel (z.B. LED1) im Sinne dieser Offenlegung, wenn es Lichtpulse (LP) einer Dauer von weniger als bevorzugt kürzer als 10µs, besser kürzer als 3µs, besser kürzer als 2µs, besser kürzer als 1µs, besser kürzer als 500ns, besser kürzer als 200ns, besser kürzer als 100ns, besser kürzer als 50ns, besser kürzer als 20ns , besser kürzer als 10ns, besser kürzer als 5ns, besser kürzer als 4ns , besser kürzer als 2ns, besser kürzer als 1ns, besser kürzer als 500ps, besser kürzer als 200ps, besser kürzer als 100ps, besser kürzer als 50ps, besser kürzer als 20ps, besser kürzer als 10ps, besser kürzer als 5ps, besser kürzer als 2ps, besser kürzer als 1ps, bei einer Amplitudenänderung der Leuchtleistung von mindestens 1%, besser von mindestens 2%, besser von mindestens 5%, besser von mindestens 10%, besser von mindestens 20%, besser von mindestens 50%, besser von mindestens 100%, , besser von mindestens 200%, besser von mindestens 500%, besser von mindestens 1000% erzeugen kann. Eine Vorrichtung im Sinne dieser Offenlegung ist kurzlichtpulsfähig, weil sie Lichtpulse kürzer als 5ns erzeugen kann. Die Dauer des Lichtpulses wird dabei als Zeitdifferenz zwischen einem ersten Zeitpunkt, zu dem die Amplitudenänderung 10% der maximalen Leuchtmittelamplitudenänderung während des Lichtpulses (LP) erreicht, bis zu einem zweiten Zeitpunkt, zu dem die Amplitudenänderung wieder auf 10% der maximalen Leuchtmittelamplitudenänderung während des Lichtpulses (LP) abgefallen ist.

Lichtpuls

Ein Lichtpuls ist eine Emission von sichtbarem Licht wobei von einer ersten Lichtleistung die Lichtabstrahlung auf eine zweite Lichtleistung zu einem ersten Zeitpunkt (t1) vergrößert oder verkleinert wird und zu einem zweiten, dem ersten Zeitpunkt (t1) nachfolgenden Zeitpunkt (t2) zu der ersten Lichtleistung zurückkehrt. Die zeitliche Differenz zwischen dem zweiten Zeitpunkt (t2) minus dem ersten Zeitpunkt (t1) ist dabei bevorzugt kleiner als 10µs, besser kleiner als 3µs, besser kleiner als 2µs, besser kleiner als 1µs, besser kleiner als 500ns, besser kleiner als 200ns, besser kleiner als 100ns, besser kleiner als 50ns, besser kleiner als 20ns, besser kleiner als 10ns, besser kleiner als 5ns, besser kleiner als 4ns. Die Dauer des Lichtpulses wird dabei als Zeitdifferenz zwischen einem ersten Zeitpunkt, zu dem die Amplitudenänderung 10% der maximalen Leuchtmittelamplitudenänderung während des Lichtpulses (LP) erreicht, bis zu einem zweiten Zeitpunkt, zu dem die Amplitudenänderung wieder auf 10% der maximalen Leuchtmittelamplitudenänderung während des Lichtpulses (LP) abgefallen ist.

Farbwinkellichtpuls

Ein Farbwinkellichtpuls ist eine Emission von sichtbarem Licht wobei die mittlere Farbtemperatur von einer ersten Farbtemperatur die Lichtabstrahlung auf eine zweite Farbtemperatur zu einem ersten Zeitpunkt (t1) vergrößert oder verkleinert wird und zu einem zweiten, dem ersten Zeitpunkt (t1) nachfolgenden Zeitpunkt (t2) zu der ersten Farbtemperatur zurückkehrt. Die zeitliche Differenz zwischen dem zweiten Zeitpunkt (t2) minus dem ersten Zeitpunkt (t1) ist dabei bevorzugt kleiner als 10µs, besser kleiner als 3µs, besser kleiner als 2µs, besser kleiner als 1µs, besser kleiner als 500ns, besser kleiner als 200ns, besser kleiner als 100ns, besser kleiner als 50ns, besser kleiner als 20ns, besser kleiner als 10ns, besser kleiner als 5ns, besser kleiner als 4ns.

modulierter Farbwinkellichtpuls

Ein Farbwinkellichtpuls ist eine Emission von sichtbarem Licht wobei die mittlere Farbtemperatur von einer ersten Farbtemperatur die Lichtabstrahlung auf eine zweite Farbtemperatur zu einem ersten Zeitpunkt (t1) vergrößert oder verkleinert wird und zu einem zweiten, dem ersten Zeitpunkt (t1) nachfolgenden Zeitpunkt (t2) zu der ersten Farbtemperatur zurückkehrt die mittlere Lichtleistung von einer ersten Lichtleistung die Lichtabstrahlung auf eine zweite Lichtleistung zu dem ersten Zeitpunkt (t1) vergrößert oder verkleinert wird und zu dem zweiten Zeitpunkt (t2) zu der ersten Lichtleistung zurückkehrt. Die zeitliche Differenz zwischen dem zweiten Zeitpunkt (t2) minus dem ersten Zeitpunkt (t1) ist dabei bevorzugt kleiner als 10µs, besser kleiner als 3µs, besser kleiner als 2µs, besser kleiner als 1µs, besser kleiner als 500ns, besser kleiner als 200ns, besser kleiner als 100ns, besser kleiner als 50ns, besser kleiner als 20ns, besser kleiner als 10ns, besser kleiner als 5ns, besser kleiner als 4ns .

The wavelength of a light emission can be determined using a grating spectrometer.

light pulse capable

A light source (e.g. LED1) is capable of light pulses in the sense of this disclosure if it has light pulses (LP) with a duration of less than, preferably shorter than 10µs, better shorter than 3µs, better shorter than 2µs, better shorter than 1µs, better shorter than 500ns, better shorter than 200ns, better shorter than 100ns, better shorter than 50ns, better shorter than 20ns, better shorter than 10ns, better shorter than 5ns, better shorter than 4ns, better shorter than 2ns, better shorter than 1ns, better shorter than 500ps, better shorter than 200ps, better shorter than 100ps, better shorter than 50ps, better shorter than 20ps, better shorter than 10ps, better shorter than 5ps, better shorter than 2ps, better shorter than 1ps, with an amplitude change in the lighting power of at least 1%, better of at least 2%, better of at least 5%, better of at least 10%, better of at least 20%, better of at least 50%, better of at least 100%, , better of at least 200%, better of at least 500%, better of can generate at least 1000%. A device within the meaning of this disclosure is capable of short light pulses because it can generate light pulses shorter than 5 ns. The duration of the light pulse is defined as the time difference between a first point in time at which the amplitude change reaches 10% of the maximum lamp amplitude change during the light pulse (LP) to a second point in time at which the amplitude change returns to 10% of the maximum lamp amplitude change during the light pulse (LP) has fallen off.

Light pulse

A light pulse is an emission of visible light, the light emission being increased or reduced from a first light power to a second light power at a first time (t1) and to the first light power at a second time (t2) following the first time (t1). returns. The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns. The duration of the light pulse is defined as the time difference between a first point in time at which the amplitude change reaches 10% of the maximum lamp amplitude change during the light pulse (LP) to a second point in time at which the amplitude change returns to 10% of the maximum lamp amplitude change during the light pulse (LP) has fallen off.

Color angle light pulse

A color angle light pulse is an emission of visible light, the average color temperature being increased or reduced from a first color temperature to a second color temperature at a first time (t1) and at a second time (t2) following the first time (t1). returns to the first color temperature. The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

modulated color angle light pulse

A color angle light pulse is an emission of visible light, the average color temperature being increased or reduced from a first color temperature to a second color temperature at a first time (t1) and at a second time (t2) following the first time (t1). the first color temperature, the average light output returns from a first light output, the light emission is increased or reduced to a second light output at the first time (t1) and returns to the first light power at the second time (t2). The time difference between the second time (t2) minus the first time (t1) is preferably smaller than 10µs, better smaller than 3µs, better smaller than 2µs, better smaller than 1µs, better smaller than 500ns, better smaller than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better smaller than 5ns, better smaller than 4ns.

Reference symbol list

1

first connection of the first transistor (T1) of the first half bridge (HB1) of the first H-bridge (H);

2

second connection of the first transistor (T1) of the first half bridge (HB1) of the first H-bridge (H);

2'

second connection of the first transistor (T1') of the first half bridge (HB2) of the second H-bridge (H');

2"

second connection of the first transistor (T1") of the first half bridge (HB1) of the third H-bridge (H'');

3

third connection of the second transistor (T2) of the first half bridge (HB1) of the first H-bridge (H);

3'

third connection of the second transistor (T2') of the first half bridge (HB1) of the second H-bridge (H');

3''

third connection of the second transistor (T2") of the first half bridge (HB1) of the third H-bridge (H'');

4

fourth connection of the second transistor (T2) of the second half bridge (HB2) of the first H-bridge (H);

5

fifth connection of the third transistor (T3) of the second half bridge (HB2) of the first H-bridge (H);

6

sixth connection of the third transistor (T3) of the second half bridge (HB2) of the first H-bridge (H);

6'

sixth connection of the third transistor (T3') of the second half bridge (HB2) of the second H-bridge (H');

6''

sixth connection of the third transistor (T3) of the second half bridge (HB2) of the third H-bridge (H'');

7

seventh connection of the fourth transistor (T4) of the second half bridge (HB2) of the first H-bridge (H);

7'

seventh connection of the fourth transistor (T4') of the second half bridge (HB2) of the second H-bridge (H');

7"

seventh connection of the fourth transistor (T4'') of the second half bridge (HB2) of the third H-bridge (H'');

8th

eighth connection of the fourth transistor (T4) of the second half bridge (HB2) of the first H-bridge (H);

9

ninth connection of the positive charge pump (LPPB) for quickly extracting the stored charge carriers or ninth connection of the positive voltage regulator (SVPB) for quickly extracting the stored charge carriers, if instead of the positive charge pump (LPPB) for quickly extracting the stored charge carriers, such a positive voltage regulator is used (SVPB) is used for rapid suction of the stored charge carriers, which is part of this disclosure;

10

Tenth connection of the positive charge pump (LPPB) for quickly extracting the stored charge carriers or tenth connection of the positive voltage regulator (SVPB) for quickly extracting the stored charge carriers, if instead of the positive charge pump (LPPB) for quickly extracting the stored charge carriers, such a positive voltage regulator is used (SVPB) is used for rapid suction of the stored charge carriers, which is part of this disclosure;

11

Eleventh connection of the negative charge pump (LPMB) for quickly extracting the stored charge carriers or eleventh connection of the negative voltage regulator (SVMB) for quickly extracting the stored charge carriers, if such a negative voltage regulator is used instead of the negative charge pump (LPMB) for quickly extracting the stored charge carriers (SVPB) is used for rapid suction of the stored charge carriers, which is part of this disclosure;

12

twelfth connection of the negative charge pump (LPMB) for quickly extracting the stored charge carriers or twelfth connection of the negative voltage regulator (SVMB) for quickly extracting the stored charge carriers, if such a negative voltage regulator is used instead of the negative charge pump (LPMB) for quickly extracting the stored charge carriers (SVMB) is used for rapid extraction of the stored charge carriers, which is part of this disclosure;

13

thirteenth connection of the positive charge pump (LPPA) for quick switching on or thirteenth connection of the positive voltage regulator (SVPA) for quick switching on if such a positive voltage regulator (SVPA) for quick switching on is used instead of the positive charge pump (LPPA) for quick switching on, what forms part of this disclosure;

14

fourteenth connection of the positive charge pump (LPPA) for quick switching on or fourteenth connection of the positive voltage regulator (SVPA) for quick switching on if such a positive voltage regulator (SVPA) for quick switching on is used instead of the positive charge pump (LPPA) for quick switching on, what forms part of this disclosure;

15

fifteenth connection of the negative charge pump (LPMA) for quick switching on or fifteenth connection of the negative voltage regulator (SVMA) for quick switching on if such a negative voltage regulator (SVMA) for quick switching on is used instead of the negative charge pump (LPMA) for quick switching on, what forms part of this disclosure;

16

sixteenth connection of the negative charge pump (LPMA) for quick switching on or sixteenth connection of the negative voltage regulator (SVPMA) for quick switching on if such a negative voltage regulator (SVMA) for quick switching on is used instead of the negative charge pump (LPMA) for quick switching on, what forms part of this disclosure;

17

seventeenth connection of the ninth transistor (T9) of the first half bridge (HB1) of the first H bridge (H);

18

eighteenth connection of the ninth transistor (T9) of the first half bridge (HB1) of the first H-bridge (H);

19

nineteenth connection of the tenth transistor (T10) of the first half bridge (HB1) of the first H-bridge (H);

20

twentieth connection of the tenth transistor (T10) of the first half bridge (HB1) of the first H-bridge (H);

21

twenty-first connection of the twelfth transistor (T12) of the second half-bridge (HB2) of the first H-bridge (H);

22

twenty-second connection of the twelfth transistor (T12) of the second half-bridge (HB2) of the first H-bridge (H);

23

twenty-third connection of the eleventh transistor (T11) of the second half-bridge (HB2) of the first H-bridge (H);

24

twenty-fourth connection of the eleventh transistor (T11) of the second half bridge (HB2) of the first H-bridge (H);

25

twenty-fifth connection of the fifth transistor (T5) of the first half bridge (HB1) of the first H-bridge (H);

26

twenty-sixth connection of the fifth transistor (T5) of the first half bridge (HB1) of the first H-bridge (H);

27

twenty-seventh connection of the sixth transistor (T6) of the first half bridge (HB1) of the first H-bridge (H);

28

twenty-eighth connection of the sixth transistor (T6) of the first half bridge (HB1) of the first H-bridge (H);

29

twenty-ninth connection of the eighth transistor (T8) of the second half bridge (HB2) of the first H-bridge (H);

30

thirtieth connection of the eighth transistor (T8) of the second half bridge (HB2) of the first H bridge (H);

31

thirty-first connection of the seventh transistor (T7) second half bridge (HB2) of the first H-bridge (H);

32

thirty-second terminal of the seventh transistor (T7) of the second half-bridge (HB2) of the first H-bridge (H);

a

Current curve when generating pulses with an H-bridge (operating voltage 40V);

A

Anode of the first light-emitting diode (LED1);

Ah

Anode of the first pulsed light-emitting diode (LED1a);

Away

Anode of the second pulsed light-emitting diode (LED1b);

Ac

Anode of the third pulsed light-emitting diode (LED1c);

AMP

traffic lights (representing transport infrastructure facilities or smart home devices);

AWB

emitted wavelength range;

b

Current curve when generating pulses with a voltage driver (operating voltage 3.3V);

BAn

On state in quasi-continuous operation (QDB) in which the first LED (LED1) is electrically energized in the flow direction and emits light;

BAus

Off state in quasi-continuous operation (QDB) in which the first LED (LED1) is electrically biased in the reverse direction;

BL

Cover;

BRL1

left brake light;

BRL2

brake light right;

c

Current curve when generating pulses with a current driver (operating current 20mA);

C_LPMA

Energy reserve for the negative charge pump to generate a fast turn-on edge, typically a capacitor;

C_LPMB

Energy reserve for the negative charge pump for quickly extracting the stored charge carriers, typically a capacitor;

C_LPPA

Energy reserve for the positive charge pump to generate a fast turn-on edge, typically a capacitor;

C_LPPB

Energy reserve for the positive charge pump for quickly extracting the stored charge carriers, typically a capacitor;

clk1

Base time signal (typically = base clock) of the computer system (µC);

clk2

Base time signal (typically = base clock) of the control device (ST);

clk3

Base time signal (typically = base clock) of the H-bridge (H), preferably the charge pumps in the H-bridge;

CL

condenser optics or condenser lens;

BL1

left direction indicator;

BL2

direction indicator right;

BLL1

Left signal light;

BLL2

right signal light;

Δt

Delay Time;

d

measured distance;

d1

first distance measured;

d2

second distance measured;

d3

third distance measured;

DB

Data bus (e.g. CAN bus or LIN bus etc.);

DLP

Micromirror array for structured deflection of the light beam.

F1

first optical filter;

F2

second optical filter;

F3

third optical filter;

FAS1

Headlight for low beam left;

FAS2

Headlight for low beam right;

FB

Roadway;

FLP

color angle light pulse;

FLPF

color angle light pulse sequence;

FSF1

Headlight for high beam left;

FSF2

Headlight for high beam right;

FST1

Headlight for daytime driving lights on the left;

FST2

Headlight for daytime driving lights on the right;

G1

first control connection of the first transistor (T1) of the first H-bridge (H);

G1'

first control connection of the first transistor (T1') of the second H-bridge (H');

G1"

first control connection of the first transistor (T1'') of the third H-bridge (H'');

G2

second control connection of the second transistor (T2) of the first H-bridge (H);

G2'

second control connection of the second transistor (T2') of the second H-bridge (H');

G2"

second control connection of the second transistor (T2") of the third H-bridge (H'');

G3

third control connection of the third transistor (T3) of the first H-bridge (H);

G3'

third control connection of the third transistor (T3') of the second H-bridge (H');

G3''

third control connection of the third transistor (T3'') of the third H-bridge (H'');

G4

fourth control connection of the fourth transistor (T4) of the first H-bridge (H);

G4'

fourth control connection of the fourth transistor (T4') of the second H-bridge (H');

G4"

fourth control connection of the fourth transistor (T4") of the third H-bridge (H");

G5

fifth control connection of the fifth transistor (T5) of the first H-bridge (H);

G6

sixth control connection of the sixth transistor (T6) of the first H-bridge (H);

G7

seventh control connection of the seventh transistor (T7) of the first H-bridge (H);

G8

eighth control connection of the eighth transistor (T8) of the first H-bridge (H);

G9

ninth control connection of the ninth transistor (T9) of the first H-bridge (H);

G10

tenth control connection of the tenth transistor (T10) of the first H-bridge (H);

G11

eleventh control connection of the eleventh transistor (T11) of the first H-bridge (H);

G12

twelfth control connection of the twelfth transistor (T12) of the first H-bridge (H);

GBP

pulsed operation of the H-bridge (H);

GND

negative total supply voltage or ground. Typically this is also the reference potential;

GND1

first negative supply voltage, for example in the first H-bridge (H);

GND1'

first negative supply voltage, for example in the second H-bridge (H');

GND1''

first negative supply voltage, for example in the third H-bridge (H'');

GND2

second negative supply voltage, for example in the first H-bridge (H);

GND2'

second negative supply voltage, for example in the second H-bridge (H');

GND2''

second negative supply voltage, for example in the third H-bridge (H'');

GWB

blocked wavelength range;

H

The first H-bridge corresponds to one of the basic constructions 1 to 8, 12, 13, 16 to 21 and 23 . In this sense, the H-bridge does not include the first pulsed light-emitting diode (LED1, LED1a). For the purposes of this disclosure, it does not include the control device (ST) and the voltage regulators (SR1, SR2). It therefore has connections 6 and 7 for the anode connection A of the LED in question, here the first LED (LED1), and connections 2 and 3 for the cathode connection K of the LED in question, here the first LED (LED1), and the connections for the control electrodes (G1, G2, G3, G4) of the four transistors (T1, T2, T3, T4) of the H-bridge and, in the simplest case, a ground connection (GND) and a supply voltage connection (VCC). The first H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (T3, T4). In extreme cases, the first half bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In extreme cases, the second half bridge (HB2: T2, T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the energy reserves (C_LPPB, C_LPPA, C_LPMA, C_LPMB) of the optional charge pumps (LPPB, LPPA, LPMA, LPMB) may be connected to the charge pumps that are part of the H-bridge as defined in this disclosure. Instead of the charge pumps (LPPB", LPPA'', LPMA'', LPMB''), voltage converters (SVPB'', SVPA'', SVMA'', SVMB'') can also be used if required;

H'

second H-bridge corresponds in its basic construction to one of the 1 to 8 . In this sense, the second H-bridge does not include the second pulsed light-emitting diode (LED1b). For the purposes of this disclosure, it does not include the control device (ST) and the voltage regulators (SR1, SR2). It therefore has the connections 6' and 7' for the anode connection A' of the second pulsed LED (LED1b), and the connections 2' and 3' for the cathode connection K' of the second pulsed LED (LED1b), and the connections for the control electrodes ( G1', G2', G3', G4') of the four transistors (T1', T2', T3', T4') of the second H-bridge and, in the simplest case, a ground connection (GND) and a supply voltage connection (VCC). The second H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4). In extreme cases, the first half bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In extreme cases, the second half bridge (HB2: T2, T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the typically H-bridge-specific energy reserves (C_LPPB', C_LPPA', C_LPMA', C_LPMB') of the also typically H-bridge-specific optional charge pumps (LPPB', LPPA', LPMA', LPMB') of the second H-bridge be connected to the charge pumps (LPPB', LPPA', LPMA', LPMB') of the second H-bridge, which may be part of the second H-bridge within the meaning of this disclosure. Instead of charge pumps (LPPB'', LPPA'', LPMA'', LPMB''), voltage converters (SVPB'', SVPA'', SVMA'', SVMB'') can also be used if required. The structure of the second H-bridge usually corresponds to the first H-bridge (H);

H''

Third H-bridge corresponds in its basic construction to one of the 1 to 8 . In this sense, the third H-bridge does not include the third pulsed light-emitting diode (LED1c). For the purposes of this disclosure, it does not include the control device (ST) and the voltage regulators (SR1, SR2). It therefore has the connections 6" and 7" for the anode connection A" of the third pulsed LED (LED1c), and the connections 2" and 3" for the cathode connection K" of the third pulsed LED (LED1c), and the connections for the control electrodes (G1'', G2'', G3'', G4'') of the four transistors (T1'', T2'', T3'', T4'') of the third H-bridge as well as in the simplest one There is a ground connection (GND) and a supply voltage connection (VCC). The third H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4). In extreme cases, the first half bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In extreme cases, the second half bridge (HB2: T2, T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the typically H-bridge-specific energy reserves (C_LPPB'', C_LPPA'', C_LPMA'', C_LPMB'') of the also typically H-bridge-specific optional charge pumps (LPPB'', LPPA'', LPMA'', LPMB '') of the second H-bridge can be connected to the charge pumps (LPPB'', LPPA'', LPMA'', LPMB'') of the third H-bridge, which are part of the third H-bridge within the meaning of this disclosure. Instead of charge pumps (LPPB'', LPPA'', LPMA'', LPMB''), voltage converters (SVPB'', SVPA'', SVMA'', SVMB'') can also be used if required. The structure of the third H-bridge usually corresponds to the first H-bridge (H);

HB1

first half bridge of the H-bridge comprising the series connection of the first transistor (T1) and the second transistor (T2);

HB2

second half bridge of the H-bridge comprising the series connection of the third transistor (T3) and the fourth transistor (T4);

HC1

first H-bridge control unit;

HC2

second H-bridge control unit;

HCV

H-bridge control instrument for measuring the voltage drop across the load in the H-bridge, i.e. typically via the first light-emitting diode (LED1);

HCl1

H-bridge control instrument for measuring the current through the first switching element of the H-bridge, i.e. typically through the first transistor (T1), here by detecting the voltage drop across the first transistor (T1);

HCl2

H-bridge control instrument for measuring the current through the second switching element of the H-bridge, i.e. typically through the second transistor (T2), here by detecting the voltage drop across the second transistor (T2);

HCl3

H-bridge control instrument for measuring the current through the third switching element of the H-bridge, i.e. typically through the third transistor (T3), here by detecting the voltage drop across the third transistor (T3);

HCl4

H-bridge control instrument for measuring the current through the fourth switching element of the H-bridge, i.e. typically through the fourth transistor (T4), here by detecting the voltage drop across the fourth transistor (T4);

IB

headlight internal bus (SW);

ILED

electric current through the first LED (LED1).

K

Cathode of the first light-emitting diode (LED1);

k

optional short-circuit state in which the first LED (LED1) is short-circuited via a supply voltage;

Ka

Cathode of the first pulsed light-emitting diode (LED1a);

Kb

Cathode of the second pulsed light-emitting diode (LED1b);

Kc

Cathode of the third pulsed light-emitting diode (LED1c);

motor vehicle

motor vehicle;

Motor vehicle1

first motor vehicle;

Motor vehicle2

second motor vehicle;

L_SVMA

Energy reserve for the negative voltage converter (SVMA) to generate a fast turn-on edge, typically an inductor. This energy reserve is typically used together with a freewheeling diode when, instead of a negative charge pump (LPMA) to generate a fast turn-on edge, a negative voltage converter (SVMA) is used to generate a fast turn-on edge. This energy reserve is not shown in any of the drawings, but is part of the disclosure.;

L_SVMB

Energy reserve for the negative voltage converter (SVMB) for quickly extracting the stored charge carriers, typically an inductor. This energy reserve is typically used together with a freewheeling diode when, instead of a negative charge pump (LPMB) for quickly sucking out the stored charge carriers, a negative voltage converter (SVMB) is used for quickly sucking out the stored charge carriers. This energy reserve is not shown in any of the drawings but is part of the disclosure;

L_SVPA

Energy reserve for the positive voltage converter (SVPA) to generate a fast turn-on edge, typically an inductor. This energy reserve is typically used together with a freewheeling diode when, instead of a positive charge pump (LPPA) to generate a fast turn-on edge, a positive voltage converter (SVPA) is used to generate a fast turn-on edge. This energy reserve is not shown in any of the drawings but is part of the disclosure;

L_SVPB

Energy reserve for the positive voltage converter (SVPB) for quickly extracting the stored charge carriers, typically an inductor. This energy reserve is typically used together with a freewheeling diode when, instead of a positive charge pump (LPPB) for quickly sucking out the stored charge carriers, a positive voltage converter (SVPB) is used for quickly sucking out the stored charge carriers. This energy reserve is not shown in any of the drawings but is part of the disclosure;

LCD

structurable aperture, preferably an LCD operated aperture or a transparent LCD display for light transmission;

LCD_CS

Control signal, preferably from the computer system (µC) for controlling the structured aperture, e.g. that of a transparent LCD screen (LCD diascope);

LED1

first light-emitting diode;

LED1a

first pulsed light-emitting diode;

LED1b

second pulsed light-emitting diode;

LED2..n

other non-pulsed light-emitting diodes or lamps;

LPMA

negative charge pump to generate a fast turn-on edge in the first H-bridge (H);

LPMA'

negative charge pump to generate a fast turn-on edge in the second H-bridge (H');

LPMA''

negative charge pump to generate a fast turn-on edge in the third H-bridge (H'');

LPMB

negative charge pump for quickly extracting the stored charge carriers in the first H-bridge (H);

LPMB'

negative charge pump for quickly extracting the stored charge carriers in the second H-bridge (H');

LPMB''

negative charge pump for quickly extracting the stored charge carriers in the third H-bridge (H'');

LPPA

positive charge pump to generate a fast turn-on edge in the first H-bridge (H);

LPPA'

positive charge pump to generate a fast turn-on edge in the second H-bridge (H');

LPPA''

positive charge pump to generate a fast turn-on edge in the third H-bridge (H'');

LPPB

positive charge pump for quickly extracting the stored charge carriers in the first H-bridge (H);

LPPB'

positive charge pump for quickly extracting the stored charge carriers in the second H-bridge (H');

LPPB''

positive charge pump for quickly extracting the stored charge carriers in the third H-bridge (H'');

LP

light pulse;

LPF

light pulse sequence;

LPWB

wavelength range capable of light pulses;

µC

computer system;

M.D

light-sensitive measuring diode;

MS1

first measurement signal;

MS2

second measurement signal;

MS2

third measurement signal;

MV

measuring device;

NGWB

unlocked wavelength range. The unlocked wavelength range includes the radiated wavelength range (AWB) without the blocked wavelength range (GWB);

NL1

fog light left;

NL2

fog light right;

NRL1

left rear fog light;

NRL2

Rear fog light right;

OP

optics or optical system;

OP2

additional optics or additional optical system;

OP3

additional optics or additional optical system;

PAn

On state in pulsed operation (GPB);

POff

Off state in pulsed operation (GPB) in which the LED does not emit any light and in which the charge carriers are actively removed from the LED;

PD1

first photodiode;

PD2

second photodiode;

PL

projection optics or projection lens;

PQZ

Intermediate state in pulsed operation (GPB) in which, due to the short duration of the stay in this intermediate state, a cross current in the H-bridge in the subsequent “POff” state is permitted in a controlled manner to clear out the charge carriers more quickly by making the residence time Δt shorter in this state is the time from the start of the intermediate state to the switch-off time of those transistors that were conducting in the “PAn” state. The switch-off time of those transistors that were conducting in the “PAn” state can be selected appropriately. Δt can be chosen negative or allowed to be negative if the current is limited by the H-bridge.

PZ

Intermediate state of pulsed operation;

QDB

Quasi-continuous operation of the H-bridge. This is the operating mode in which the first LED (LED1) is typically used as a light source in a lighting device.

RF

Reflector, preferably a mirror optics;

RF2

another reflector, preferably another mirror optics;

RFL1

reversing light left;

RFL2

reversing light right;

RL1

rear light left;

RL2

taillight right;

Rs1

first shunt resistor;

Rs2

second shunt resistor;

SW

threshold;

SL

scattered light;

SL1

Scattered light from the first pulsed light-emitting diode (LED1a);

SL2

Scattered light from the second pulsed light-emitting diode (LED1b);

SR1

first voltage regulator, which generates the first positive supply voltage (VCC1) and the first negative supply voltage (GND1) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

SR2

second voltage regulator, which generates the second positive supply voltage (VCC2) and the second negative supply voltage (GND2) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

SR3

third voltage regulator, which generates the third positive supply voltage (VCC3) and the third negative supply voltage (GND3) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

SR4

fourth voltage regulator, which generates the fourth positive supply voltage (VCC4) and the fourth negative supply voltage (GND4) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

SR5

fifth voltage regulator, which generates the fifth positive supply voltage (VCC5) and the fifth negative supply voltage (GND5) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

SR6

sixth voltage regulator, which generates the sixth positive supply voltage (VCC6) and the sixth negative supply voltage (GND4) from the positive total supply voltage (VCC) and the negative total supply voltage (GND);

ST

control device;

SVMA

negative voltage converter to generate a fast switch-on edge in the first H-bridge (H). The negative voltage converter for generating a fast switch-on edge in the first H-bridge (H) can be provided as a substitute instead of the negative charge pump (LPMA) for generating a fast switch-on edge in the first H-bridge (H), in particular in the figures. The negative voltage converter for generating a fast turn-on edge in the first H-bridge (H) preferably, but not necessarily, generates an output voltage (GND1) relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential (GND);

SVMA'

negative voltage converter to generate a fast switch-on edge in the second H-bridge (H'). The negative voltage converter for generating a fast switch-on edge in the second H-bridge (H') can be provided as a substitute instead of the negative charge pump (LPMA') for generating a fast switch-on edge in the second H-bridge (H'), in particular in the figures become. The negative voltage converter for generating a fast turn-on edge in the second H-bridge (H') preferably, but not necessarily, generates an output voltage (GND1') relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential (GND );

SVMA''

negative voltage converter to generate a fast switch-on edge in the third H-bridge (H''). The negative voltage converter for generating a fast switch-on edge in the third H-bridge (H'') can be used instead of the negative charge pump (LPMA'') for generating a fast switch-on edge in the third H-bridge (H''), especially in the figures , can be provided as a replacement. The negative voltage converter for generating a fast switch-on edge in the third H-bridge (H'') preferably, but not necessarily, generates an output voltage (GND1'') relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential (GND);

SVMB

negative voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H). The negative voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) can be provided as a replacement instead of the negative charge pump (LPMB) for quickly extracting the stored charge carriers in the first H-bridge (H), in particular in the figures . The negative voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) preferably, but not necessarily, generates an output voltage (GND2) relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential (GND) ;

SVMB'

negative voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H'). The negative voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H') can be used instead of the negative charge pump (LPMB') for quickly extracting the stored charge carriers in the second H-bridge (H'), especially in the figures. be provided as a replacement. The negative voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H') preferably, but not necessarily, generates an output voltage (GND2') relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential ( GND);

SVMB''

negative voltage converter for quickly extracting the stored charge carriers in the third H-bridge (H''). The negative voltage converter for quickly extracting the stored charge carriers in the third H-bridge (H'') can be used instead of the negative charge pump (LPMB'') for quickly extracting the stored charge carriers in the third H-bridge (H''), especially in the figures, can be provided as a replacement. The negative voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H'') preferably, but not necessarily, generates an output voltage (GND2'') relative to a reference potential (GND) that is lower than the most negative of its supply voltages relative to this reference potential (GND);

SVPA

positive voltage converter to generate a fast switch-on edge in the first H-bridge (H). The positive voltage converter for generating a fast switch-on edge in the first H-bridge (H) can be provided as a substitute instead of the positive charge pump (LPPA) for generating a fast switch-on edge in the first H-bridge (H), in particular in the figures. The positive voltage converter for generating a fast turn-on edge in the first H-bridge (H) preferably, but not necessarily, generates an output voltage (VCC2) relative to a reference potential (GND) that is higher than the most positive of its supply voltages relative to this reference potential (GND);

SVPA'

positive voltage converter to generate a fast switch-on edge in the second H-bridge (H'). The positive voltage converter for generating a fast switch-on edge in the second H-bridge (H') can be provided as a substitute instead of the positive charge pump (LPPA') for generating a fast switch-on edge in the second H-bridge (H'), in particular in the figures become. The positive voltage converter for generating a fast turn-on edge in the second H-bridge (H') preferably, but not necessarily, generates an output voltage (VCC2') relative to a reference potential (GND) that is higher than the most positive of its supply voltages relative to this reference potential (GND );

SVPA''

positive voltage converter to generate a fast switch-on edge in the third H-bridge (H''). The positive voltage converter for generating a fast switch-on edge in the third H-bridge (H'') can be used instead of the positive charge pump (LPPA'') for generating a fast switch-on edge in the third H-bridge (H''), especially in the figures , can be provided as a replacement. The positive voltage converter for generating a fast switch-on edge in the third H-bridge (H'') preferably, but not necessarily, generates an output voltage (VCC2'') relative to a reference potential (GND) that is higher than the most positive of its supply voltages relative to this reference potential (GND);

SVPB

positive voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H). The positive voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) can be provided as a replacement instead of the positive charge pump (LPPB) for quickly extracting the stored charge carriers in the first H-bridge (H), in particular in the figures . The positive voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) preferably, but not necessarily, generates an output voltage (VCC1) relative to a reference potential (GND) that is higher than the most positive of its supply voltages relative to this reference potential (GND) ;

SVPB'

positive voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H'). The positive voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H') can be used instead of the positive charge pump (LPPB') for quickly extracting the stored charge carriers in the second H-bridge (H'), especially in the figures. be provided as a replacement. The positive voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H') preferably, but not necessarily, generates an output voltage (VCC1') relative to a reference potential (GND), which is higher than the most positive of its supply voltages relative to this reference potential ( GND);

SVPB''

positive voltage converter for quickly extracting the stored charge carriers in the third H-bridge (H''). The positive voltage converter for quickly extracting the stored charge carriers in the third H-bridge (H'') can be used instead of the positive charge pump (LPPB'') for quickly extracting the stored charge carriers in the third H-bridge (H''), especially in the figures, can be provided as a replacement. The positive voltage converter for quickly extracting the stored charge carriers in the third H-bridge (H'') preferably, but not necessarily, generates an output voltage (VCC1'') relative to a reference potential (GND) that is higher than the most positive of its supply voltages relative to this reference potential (GND);

SW

headlights;

SW1

first headlight;

SW2

second headlight;

SW3

third headlight;

SWL

headlights, which are typically not pulsed;

sync

Synchronization signals with which the control device transmits the transmission signal to the measuring device (MV) so that it can carry out a comparison between the transmission signal and the received signal of the measuring diode (MD), for example by forming a correlation integral between the transmission signal and the received signal of the measuring diode (MD). .

τ

Lifespan of the charge carriers of the first light-emitting diode (LED1);

τpn

Clear out time. For the purposes of this disclosure, the clearing time is the time during which a clearing voltage (U _RM ) that is increased in magnitude compared to the amount of the supply voltage is applied to this first light-emitting diode (LED1) in the reverse direction of the first light-emitting diode (LED1). According to this disclosure, the clearing time is preferably such that a residual charge remains in the first LED (LED1) in order not to reduce the service life more than necessary. The clearing time is therefore preferably shorter than the storage time of the charge carriers for this increased clearing voltage in the blocking direction of the first light-emitting diode (LED1). The clearing time (τ _pn ) is preferably less than 95% of the storage time (τ _sp1 ), preferably less than 95% of the storage time (τ _sp1 )), preferably less than 90% of the storage time (τ _sp1 ), preferably less than 85% the storage time (τ _sp1 ), preferably less than 80% of the storage time (τ _sp1 ), preferably less than 75% of the storage time (τ _sp1 ). It is recommended to accurately measure and qualify the effect on the junction and lifespan of the first light-emitting diode (LED1) and to adjust the clearing time (τ _pn ) and the clearing voltage (U _RM ) appropriately according to the results. As a rule, this data is not available in the data sheets of the light-emitting diodes.

τpp

Switch-on time. For the purposes of this disclosure, the switch-on time is the time during which a forward voltage that is increased in magnitude compared to the amount of the supply voltage is applied to this first light-emitting diode (LED1) in the flow direction of the first light-emitting diode (LED1). According to this disclosure, the switch-on time is preferably dimensioned so that the luminous energy output just reaches a predetermined maximum value. The clearing time is therefore preferably shorter than the storage time of the charge carriers for this increased clearing voltage in the blocking direction of the first light-emitting diode (LED1). The switch-on time is preferably less than 95% of the storage time (τ _sp1 ), preferably less than 95% of the storage time (τ _sp1 ), preferably less than 90% of the storage time (τ _sp1 ), preferably less than 85% of the storage time (τ _sp1 ), preferably less than 80% of the storage time (τ _sp1 ), preferably less than 75% of the storage time (τ _sp1 ). As a result, the first light-emitting diode is not completely flooded with charge carriers. Rather, a charge cloud results that penetrates into the area of the other doping within the pn junction. It is recommended to accurately measure and qualify the impact on the junction and lifespan of the first light-emitting diode (LED1) and adjust the on-time (τ _pp ) and forward voltage (U _DR ) appropriately according to the results. As a rule, this data is not available in the data sheets of the light-emitting diodes.

τSP0

Storage time of the charge carriers in the first light-emitting diode (LED1) when operating with supply voltage and using the supply voltage as a clearing voltage in the reverse direction of the first light-emitting diode (LED1).

τSP1

Storage time of the charge carriers in the first light-emitting diode (LED1) when operating with a voltage that is higher than the supply voltage as an operating voltage in pulse mode in the flow direction of the first light-emitting diode (LED1) and using a clearing voltage that is higher than the amount of the supply voltage in the reverse direction of the first light-emitting diode (LED1) .

t

Time;

t0

first point in time;

t1

second point in time;

T1

first transistor or first controllable switch, which is controllable through its first control connection (G1);

T1'

first transistor of the second H-bridge (H') or first controllable switch of the second H-bridge (H'), which is controllable through its first control connection (G1');

T1''

first transistor of the third H-bridge (H'') or first controllable switch of the third H-bridge (H''), which can be controlled by its first control connection (G1'');

T2

second transistor or second controllable switch, which is controllable through its second control terminal (G2);

T2'

second transistor of the second H-bridge (H') or second controllable switch of the second H-bridge (H'), which is controllable through its second control connection (G2');

T2''

second transistor of the third H-bridge (H'') or second controllable switch of the third H-bridge (H''), which is controllable through its second control connection (G2'');

T3

third transistor or third controllable switch, can be controlled through its third control connection (G3);

T3'

third transistor of the second H-bridge (H') or third controllable switch of the second H-bridge (H'), which is controllable through its third control connection (G3');

T3''

third transistor of the third H-bridge (H'') or third controllable switch of the third H-bridge (H''), which can be controlled by its third control connection (G3'');

T4

fourth transistor or fourth controllable switch, which is controllable through its fourth control terminal (G4);

T4'

fourth transistor of the second H-bridge (H') or fourth controllable switch of the second H-bridge (H'), which is controllable through its fourth control connection (G4');

T4'

fourth transistor of the third H-bridge (H'') or fourth controllable switch of the third H-bridge (H''), which is controllable through its fourth control connection (G4'');

T5

fifth transistor or fifth controllable switch, which is controllable through its fifth control terminal (G5);

T6

sixth transistor or sixth controllable switch, which is controllable through its sixth control terminal (G6);

T7

seventh transistor or seventh controllable switch, which is controllable through its seventh control terminal (G7);

T8

eighth transistor or eighth controllable switch, which is controllable through its eighth control terminal (G8);

T9

ninth transistor or ninth controllable switch controllable through its ninth control terminal (G9);

T10

tenth transistor or tenth controllable switch, which is controllable through its tenth control terminal (G10);

T11

eleventh transistor or eleventh controllable switch, which is controllable through its eleventh control terminal (G11);

T12

twelfth transistor or twelfth controllable switch, which is controllable through its twelfth control terminal (G12);

TB

Time base. The time base generates the device's base time signals. These are preferably the base time signal (clk1) (typically = base clock) of the computer system (µC) and the base time signal (clk2) (typically = base clock) of the control device (ST) and the base time signal (clk3) (typically = base clock) of the H -Bridge (H), preferably the charge pumps in the H-bridge (H). These base time signals (clk1, clk2, clk3) can depend on each other or be the same;

TPZmin

Minimum length of stay in the “PZ” state;

TOFIMG

Two-dimensional arrangement of time-controllable light-sensitive sensors.

TWL1

Left warning light for vehicles in the left blind spot;

TWL2

Right warning light for vehicles in the right blind spot;

UDR

Forward voltage on the first light-emitting diode (LED1), which causes the first light-emitting diode (LED1) to be flooded with charge carriers. The amount of the forward voltage in pulse operation is preferably above the voltage amount of the voltage that is used in lighting operation to control the first light-emitting diode (LED1). The switch-on time (τ _pp ), during which this forward voltage is applied to the first LED (LED1), is therefore dimensioned such that it is preferably only a fraction of the storage time (τ _sp1 ) for a reverse voltage of the same voltage amount as this forward voltage.

URM

Clearing voltage or blocking voltage at the first light-emitting diode (LED1), which causes the charge carriers that are still within the first light-emitting diode (LED1) to be sucked out more quickly. The amount of the blocking voltage in pulsed operation is preferably above the voltage amount of the voltage that is used in lighting operation to control the first light-emitting diode (LED1). The clearing time (τ _pn ), which this blocking voltage is applied to the first LED (LED1), is therefore dimensioned such that it is preferably only a fraction of the storage time (τ _sp1 ). The clearing time (τ _pn ) is preferably less than 95% of the storage time (τ _sp1 ), preferably less than 95% of the storage time (τ _sp1 )), preferably less than 90% of the storage time (τ _sp1 ), preferably less than 85% the storage time (τ _sp1 ), preferably less than 80% of the storage time (τ _sp1 ), preferably less than 75% of the storage time (τ _sp1 ). It is recommended to accurately measure and qualify the effect on the junction and lifespan of the first light-emitting diode (LED1) and to adjust the clearing time (τ _pn ) and the clearing voltage appropriately according to the results.

VCC

positive total supply voltage;

VCC'

positive supply voltage, which is switched in magnitude between the quasi-continuous operation (QDB) and the pulsed operation (GPB) between a voltage value corresponding to a first supply voltage (VCC1) and a second voltage value corresponding to a third supply voltage (VCC3);

VCC1

first positive supply voltage, for example in the first H-bridge (H);

VCC1'

first positive supply voltage, for example in the second H-bridge (H');

VCC1''

first positive supply voltage, for example in the third H-bridge (H'');

VCC2

second positive supply voltage, for example in the first H-bridge (H);

VCC2'

second positive supply voltage, for example in the second H-bridge (H');

VCC2''

second positive supply voltage, for example in the third H-bridge (H'');

VCC3

third positive supply voltage;

VLED1

Lamp voltage via the first light-emitting diode (LED1) in the H-bridge (H);

VWB

Wavelength range used for the measurement (typically corresponds to the first wavelength range (WB1) emitted by the first LED (LED1))

WB1

first wavelength range;

WB2

second wavelength range;

WB3

third wavelength range;

Z

Intermediate state in which all four transistors (T1, T2, T3, T4) and possibly other transistors (e.g. T12) are switched off;

ZL1

decorative light left;

ZL2

decorative light right;

List of Scriptures Cited

CN 102 612 231 A ,
DE 197 04 496 A1 ,
DE 10 2006 041 013 A1 ,
DE 10 2006 044 794 A1 ,
DE 10 2008 018 718 B4 ,
DE 10 2009 020 218 B3 ,
DE 10 2013 001 273 A1 ,
DE 10 2013 001 274 A1 ,
DE 10 2013 002 668 A1 ,
DE 20 2013 008 067 U1 ,
DE 10 2015 110 233 A1 ,
DE 10 2016 205 563 A1 ,
DE 10 2016 202 505 A1 ,
DE 20 2017 103 902 U1 ,
EP 2 160 629 B1 ,
EP 2 783 232 B1 ,
JP 2005 - 158 483 A ,
US 4,571,506 A ,
US 9,653,642 B1 ,
US 2016 / 0 257 306 A1 ,
WO 2014/ 124 768 A1 ,

Claims (8)

Device for controlling at least one light-emitting diode (LED1) by means of an H-bridge (H) for generating short light pulses (LP) - with a first transistor (T1) of the H-bridge (H), which has a first connection (1) and a second Has connection (2) and a first control connection (G1); - with a second transistor (T2) of the H-bridge (H), which has a third connection (3) and a fourth connection (4) and a second control connection (G2); - with a third transistor (T3) of the H-bridge (H), which has a fifth connection (5) and a sixth connection (6) and a third control connection (G3); - with a fourth transistor (T4) of the H-bridge (H), which has a seventh connection (7) and an eighth connection (8) and a fourth control connection (G4); - with a first light-emitting diode (LED1) with an anode (A) and with a cathode (K); - with a first positive supply voltage (VCC1); - with a second positive supply voltage (VCC2), which can be equal to the first positive supply voltage (VCC1); - with a first negative supply voltage (GND1); - with a second negative supply voltage (GND2), which can be equal to the first negative supply voltage (GND1); - wherein the first terminal (1) of the first transistor (T1) is connected to the first positive supply voltage (VCC1); - wherein the fifth terminal (5) of the third transistor (T3) is connected to the second positive supply voltage (VCC2); - wherein the second connection (2) of the first transistor (T1) is connected to the third connection (3) of the second transistor (T2); - wherein the sixth connection (6) of the third transistor (T3) is connected to the seventh connection (7) of the fourth transistor (T4); - wherein the fourth terminal (4) of the second transistor (T2) is connected to the first negative supply voltage (GND1); - wherein the eighth connection (8) of the fourth transistor (T4) is connected to the second negative supply voltage (GND2); - wherein the cathode (K) of the first light-emitting diode (LED1) is connected to the second connection (2) of the first transistor (T1) and the third connection (3) of the second transistor (T2); - wherein the anode (A) of the first light-emitting diode (LED1) is connected to the sixth connection (6) of the third transistor (T3) and the seventh connection (7) of the fourth transistor (T4); - wherein the first transistor (T1) has a first operating state and a second operating state and - wherein in the first operating state of the first transistor (T1) the first connection (1) of the first transistor (T1) is connected to the second connection (2) of the first Transistor (T1) is electrically connected with a lower resistance than in the second operating state; - wherein the second transistor (T2) has a first operating state and a second operating state and - wherein in the first operating state of the second transistor (T2), the third connection (3) of the second transistor (T2) is connected to the fourth connection (4) of the second Transistor (T2) is electrically connected with a lower resistance than in the second operating state; - wherein the third transistor (T3) has a first operating state and a second operating state and - wherein in the first operating state of the third transistor (T3) the fifth connection (5) of the third transistor (T3) is connected to the sixth connection (6) of the third Transistor (T3) is electrically connected with a lower resistance than in the second operating state; - wherein the fourth transistor (T4) has a first operating state and a second operating state and - wherein in the first operating state of the fourth transistor (T4), the seventh connection (7) of the fourth transistor (T4) is connected to the eighth connection (8) of the fourth Transistor (T4) is electrically connected with a lower resistance than in the second operating state; - wherein the first transistor (T1) assumes the first operating state when its first control terminal (G1) is in a first logical state and assumes the second operating state when its first control terminal (G1) is in a second logical state; - wherein the second transistor (T2) assumes the first operating state when its second control terminal (G2) is in a first logical state and assumes the second operating state when its second control terminal (G2) is in a second logical state; - wherein the third transistor (T3) assumes the first operating state when its third control terminal (G3) is in a first logical state and assumes the second operating state when its third control terminal (G3) is in a second logical state; - wherein the fourth transistor (T4) assumes the first operating state when its fourth control terminal (G4) is in a first logical state and assumes the second operating state when its fourth control terminal (G4) is in a second logical state; - wherein the device has a control device (ST) which controls the first control connection (G1) and the second control connection (G2) and the third control connection (G3) and the fourth control connection (G4); - wherein the control connections (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) can be in a first logical state or a second logical state - the control device (ST) being designed so that the Control connections (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) are either - in a first overall state, an intermediate state (PZ), in which the first control connection (G1) is in the second operating state and the second control connection (G2) is in the second operating state and the third control connection (G3) is in the second operating state and the fourth control connection (G4) is in the second operating state, or - in a second overall state, a "PAn" state , in which the first control connection (G1) is in the second operating state and the second control connection (G2) is in the first operating state and the third control connection (G3) is in the first operating state and the fourth control connection (G4) is in the second operating state, or - in a third overall state, a “POff” state, in which the first control connection (G1) is in the first operating state and the second control connection (G2) is in the second operating state and the third control connection (G3) is in the second operating state and the fourth control connection (G4) is in the first operating state; - and the control device (ST) is designed to ensure that a change only occurs from the first overall status, the intermediate state (PZ), into the second overall state, the “PAn” state, and vice versa, or from the first overall state, the intermediate state (PZ), into the third overall state, the “PAn” state, and vice versa can; - whereby the charge carriers in the first light-emitting diode (LED1) are reduced after a change from the second overall state, the “PAn” state, to the first overall state, the intermediate state (PZ), with a charge carrier lifetime (τ); - wherein the control device (ST) is designed to, after the first time (t ₀ ) of the change from the second overall state, the “PAn” state, to the first overall state, the intermediate state (PZ), a change from the first overall state , the intermediate state (PZ), into the third overall state, the “POff” state, after a delay time (Δt) which is smaller than the charge carrier lifetime (τ) and - whereby the control device (ST) is designed to ensure that the second overall state, the “PAn” state, is not assumed for longer than a switch-on time (τ _pp ) and - the control device (ST) is designed to ensure that the third overall state, the “PAn” state, is not maintained for longer than a clearing time (τ _pn ) is taken and where the clearing time (τ _pn ) is smaller than the charge carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1) and - where the switch-on time (τ _pp ) is smaller than the charge carrier lifetime (τ) in the PN -Transition of the first light-emitting diode (LED1). Device according to one or more of the preceding claims - with at least one voltage converter or at least one charge pump (LPPA, LPPB, LPMA, LPMB) • to generate the first positive supply voltage (VCC1) or • to generate the second positive supply voltage (VCC2) or • to generate the first negative supply voltage (GND1) or • to generate the second negative supply voltage (GND2). Device according to one or more of the preceding claims • wherein at least one of the transistors (T1, T2, T3, T4) is coupled to a temperature sensor, in particular a PN diode or a bipolar transistor as a temperature sensor. Sub-method for operating an H-bridge for emitting a light pulse (LP) by means of an H-bridge according to one or more of the preceding claims, - wherein the H-bridge (H) has a first half-bridge (HB1: T1, T2) with at least the first Transistor (T1) and at least the second transistor (T2) and - wherein the H-bridge (H) comprises a second half-bridge (HB2: T3, T4) with at least the third transistor (T3) and at least the fourth transistor (T4). and - comprising the steps - assuming an intermediate state (PZ), in particular from a “POff” state, • wherein a first cross-current with a first maximum cross-current amount occurs in the first half-bridge (HB1:T1, T2) of the H-bridge and • wherein a second cross-current with a second maximum cross-current amount occurs in the second half-bridge (HB2: T3, T4) of the H-bridge, comprising the substeps • blocking the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H) so that the first transistor (T1) no longer conducts electrically between the first positive supply voltage (VCC1) and the output of the first half bridge (HB1) of the H-bridge (H), provided that this first transistor (T1) was previously connected between these connections of the first transistor (T1) was electrically conductive; • Blocking the second transistor (T2) of the first half bridge (HB1) of the H-bridge (H), so that the second transistor (T2) is no longer electrically connected between the first negative supply voltage (GND1) and the output of the first half bridge (HB1). H-bridge (H) conducts if this second transistor (T2) was previously electrically conductive between these connections of the second transistor (T2); • Blocking the third transistor (T3) of the second half bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is no longer electrically connected between the second positive supply voltage (VCC2) and the output of the second half bridge (HB2). H-bridge (H) conducts if this third transistor (T3) was previously electrically conductive between these connections of the third transistor (T3); • Blocking the fourth transistor (T4) of the second half bridge (HB2) of the H-bridge (H), so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half bridge (HB2). H-bridge (H) conducts if this fourth transistor (T4) was previously electrically conductive between these connections of the fourth transistor (T4); - Assuming a “PAn” state (PAn) by transitioning from the intermediate state (PZ), comprising the substeps • Blocking the first transistor (T1) of the first half bridge (HB1) of the H-bridge (H), so that the first transistor ( T1) no longer conducts electrically between the first positive supply voltage (VCC1) and the output of the first half bridge (HB1) of the H-bridge (H), provided that this first transistor (T1) is previously electrically conductive between these connections of the first transistor (T1). was; • Switching on the second transistor (T2) of the first half bridge (HB1) of the H bridge (H), so that the second transistor (T2) is electrically connected between the first negative supply voltage (GND1) and the output of the first half bridge (HB1) of the H bridge. Bridge (H) conducts if this second transistor (T2) was previously electrically blocking (=high impedance) between these connections of the second transistor (T2); • Turning on the third transistor (T3) of the second half bridge (HB2) of the H bridge (H), so that the third transistor (T3) is electrically connected between the second positive supply voltage (VCC2) and the output of the second half bridge (HB2) of the H bridge. Bridge (H) conducts if this third transistor (T3) was previously electrically blocking (=high impedance) between these connections of the third transistor (T3); • Blocking the fourth transistor (T4) of the second half bridge (HB2) of the H bridge (H) so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half bridge (HB2) of the H -Bridge (H) conducts if this fourth transistor (T4) was previously electrically conductive between these connections of the fourth transistor (T4); - Assuming a “PQZ” state (PQZ) by transitioning from the “PAn” state, • comprising the substeps • switching on the first transistor (T1) of the first half bridge (HB1) of the H-bridge (H), so that the first Transistor (T1) conducts electrically between the first positive supply voltage (VCC1) and the output of the first half bridge (HB1) of the H-bridge (H), provided that this first transistor (T1) is previously electrically blocking between these connections of the first transistor (T1). (=high impedance); • Blocking the second transistor (T2) of the first half bridge (HB1) of the H-bridge (H), so that the second transistor (T2) is no longer electrically connected between the first negative supply voltage (GND1) and the output of the first half bridge (HB1). H-bridge (H) conducts if this second transistor (T2) was previously electrically conductive between these connections of the second transistor (T2); • Blocking the third transistor (T3) of the second half bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is no longer electrically connected between the second positive supply voltage (VCC2) and the output of the second half bridge (HB2). H-bridge (H) conducts if this third transistor (T3) was previously electrically conductive between these connections of the third transistor (T3); • Switching on the fourth transistor (T4) of the second half bridge (HB2) of the H bridge (H), so that the fourth transistor (T4) is electrically connected between the second negative supply voltage (GND2) and the output of the second half bridge (HB2) of the H bridge. Bridge (H) conducts if this fourth transistor (T4) was previously electrically blocking (=high impedance) between these connections of the fourth transistor (T4); • Leaving the “PQZ” state after a dwell time Δt; - Assuming a “PAus” state (PAus) by transitioning from the “PQZ” state, • where a third cross-current with a third maximum cross-current amount occurs in the first half-bridge (HB1: T1, T2) of the H-bridge and • where a fourth cross-current with a fourth maximum cross-current amount occurs in the second half-bridge (HB2: T3, T4) of the H-bridge, comprising the substeps • blocking the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H,) so that the first transistor (T1) no longer conducts electrically between the first positive supply voltage (VCC1) and the output of the first half bridge (HB1) of the H-bridge (H), provided that this first transistor (T1) was previously connected between these connections of the first transistor (T1) was in charge; • Blocking the second transistor (T2) of the first half bridge (HB1) of the H-bridge (H), so that the second transistor (T2) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the first half bridge (HB1). H-bridge (H) conducts if this second transistor (T2) was previously electrically conductive between these connections of the second transistor (T2); • Blocking the third transistor (T3) of the second half bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is no longer electrically connected between the second positive supply voltage (VCC2) and the output of the second half bridge (HB2). H-bridge (H) conducts if this third transistor (T3) was previously electrically conductive between these connections of the third transistor (T3); • Blocking the fourth transistor (T4) of the second half bridge (HB2) of the H-bridge (H), so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half bridge (HB2). H-bridge (H) conducts if this fourth transistor (T4) was previously electrically conductive between these connections of the fourth transistor (T4). • where the third maximum cross-current amount is greater than the first maximum cross-current amount and/or • Where the “PZ” state differs from the “PQZ” state in that all transistors to be blocked (T3, T2) are blocked when leaving the “PZ” state, while they are temporarily blocked when leaving the “PQZ” state can still be electrically conductive. Procedure according to Claim 4 - Wherein the H-bridge corresponds to a first operating state (GPB) for carrying out a partial method for emitting a light pulse (LP). Claim 3 can assume and - wherein the H-bridge can assume a second operating state (QDB) for carrying out a sub-process for emitting light for lighting purposes and - wherein the H-bridge comprises a further transistor (T12) which has at least one output of a second half-bridge ( HB2: T3, T4) can conductively connect to a third positive supply voltage (VCC3) or can disconnect from it, and - comprising the additional steps • Carrying out the sub-procedure according to Claim 4 , • if the H-bridge (H) is in the first operating state (GPB) and a light pulse (LP) is to be generated and • blocking the further transistor (T12) of the H-bridge (H) while the partial method is being carried out Claim 3 , so that the further transistor (T12) no longer conducts electrically between the third positive supply voltage (VCC3) and the output of the second half bridge (HB2) of the H-bridge (H), provided that this further transistor (T12) has previously been connected between these connections Transistor (T12) was electrically conductive; • Carrying out the following sub-procedure if the H-bridge (H) is in the second operating state (QDB) and light is to be generated for lighting purposes ▪ Switching on the further transistor (T12) of the H-bridge (H), so that the further transistor ( T12) conducts electrically between the third positive supply voltage (VCC3) and the output of the second half bridge (HB2) of the H-bridge (H), provided that this further transistor (T12) is previously electrically blocking between these connections of the further transistor (T12) (= high impedance); ▪ Switching on a transistor (T2) of the H-bridge (H), so that the transistor (T2) is electrically connected between the negative supply voltage (GND) and the output of the first half-bridge (HB1: T1, T2) of the H-bridge (H), which is not the second half bridge (HB2: T3, T4), conducts if this transistor (T2) was previously electrically blocking (=high impedance) between these connections of the transistor (T2). Procedure according to Claim 4 or 5 comprising the additional steps - determining the third cross-current amount and/or the fourth cross-current amount as a control parameter, wherein the respective maximum cross-current amount and/or the time profile of the respective cross-current amount can be detected; - Change at least one of the following parameters of the sub-process Claim 3 depending on the control parameter: • Changing the dwell time Δt in the “PQZ” state; • Changing the voltage magnitude of the voltage difference between the second positive supply voltage (VCC2) and the first negative supply voltage (GND1); Procedure according to Claim 4 until 6 comprising the additional steps - determining a temperature which depends on the temperature of at least one of the components (T1, T2, T3, T4) of the H-bridge (H) or the temperature of the light-emitting diode (LED1); - Change at least one of the following parameters of the sub-process Claim 3 depending on the control parameter: • Changing the dwell time Δt in the “PQZ” state; • Changing the voltage magnitude of the voltage difference between the second positive supply voltage (VCC2) and the first negative supply voltage (GND1); Procedure according to Claim 6 or 7 - whereby the dwell time Δt in the “PQZ” state is regulated in such a way that the dwell time Δt in the “PQZ” state is minimized until a cross-current occurs with a maximum permissible cross-current amount - and the maximum cross-current amount for the duration of the stay in “POff” state is maximized up to a maximum permissible cross-current amount.

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