DE102018120245A1 - H-bridge for generating short light pulses by means of an LED light source and high pulsed operating voltages and method for their operation - Google Patents

Abstract

A new control for an LED is proposed in order to be able to generate short light pulses of high luminosity by means of this LED. The control is carried out according to the proposal via an H-bridge in the way that the LED can be flooded particularly fast with charge carriers or that charge carriers can be removed from the LED very quickly. When using LEDs in the primary colors not only brightness light pulses, but also color angle pulses can be generated, which can be used in particular for light transit time measurement, preferably by means of time of flight cameras (TOF cameras). Preferably motor vehicle headlights are equipped with such bulbs with such H-bridge control. They can be used for a variety of purposes in the car. The control device (ST) of the H-bridge is designed so that the "PAn" state, in which the LED is switched on in the pulse mode, is no longer taken as a switch-on time (τ) and the "PAus" state in the the LED is turned off no longer than a clearing time (τ) is taken. The clearing time (τ) and the turn-on time (τ) are smaller than the carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1). This allows higher voltages to be used for pulsed turning on and off of the LED, which speeds up this process.

Description

preamble

The proposed method and the proposed device relate to the generation of short light pulses by driving at least one light emitting diode, hereinafter also referred to as LED.

General introduction

LIDAR will play an important role in ADAS and autonomous driving in the future. Strict functional safety requirements require reliable and sensitive systems to help make the right decisions in extreme situations. For this necessary short light pulses are important in many applications. If necessary, more expensive laser diodes are often used to allow pulses shorter than about 10ns. A main application for pulsed light sources is the time of flight measurement for distance determination (eg Flash LIDAR). Since the information of the measurement is in the flanks of the pulses, a shortening of the pulse length is equivalent to an improvement in the efficiency, which can be directly translated into an improvement in performance. Especially with LIDAR systems with a long range, the system performance is limited by the permissible emission performance. An efficient light source is therefore just as crucial for system performance as a sensitive sensor. In general, LIDAR systems are used with mirror deflectable laser beams.

Here, however, arises the problem of high energy density. This can damage eyes.

Today, Flash LIDAR systems are realized with dedicated infrared pulse sources and are limited in their range and sensitivity by a legal limited transmission power to maintain eye safety.

Short light pulses of pulsed light sources are therefore of outstanding importance for measuring the time of flight for distance determination. The efficiency of such light transit time measurements is determined in certain methods by the pulse length. A shortening of the pulse length increases the efficiency, since then with a constant average light output a higher range can be achieved.

State of the art

Automotive LIDAR systems are now generally built with dedicated lighting sources. In this way, for reasons of acceptance, one is limited to the invisible wave range and has to make do with small dimensions with regard to the space available in the motor vehicle. Both limitations have a minimizing effect on the maximum transmit power and thus on the performance of the system, taking eye protection into account. Here, an increase in reach is urgently required. As will be further elaborated below, a key issue is the generation of short light pulses with light-emitting diodes (LEDs) or laser diodes.

LED pulses are generated in the prior art by switchable current or voltage sources. This typically gives rise and fall times of the order of 10ns. These are due to the transfer of the junction capacitance in conjunction with parasitic components of the diode and their terminals.

From the WO 2014/124 768 A1 a method is known for a vehicle that detecting the operating state of a vehicle, generating a modulated signal depending on the operating state, the driving of a lighting device of the vehicle in dependence on the modulated signal. In this case, the lighting device according to the technical teaching of WO 2014/124 768 A1 designed to illuminate a scene in an environment of the vehicle or within the vehicle. The procedure of WO 2014/124 768 A1 further comprises receiving light emitted from the illumination device and reflected from an object in the scene, generating a received signal in response to the received light, and determining distance information of the object in response to the modulated signal and the received signal. The technical teaching of WO 2014/124 768 A1 leaves open how particularly short pulses, which are required for a good depth resolution, should be generated.

From the EP 2 160 629 B1 For example, there is known a method of providing driver assistance to a driver in which, inter alia, a visible light source in the form of a light emitting diode is driven to emit pulsating light in a predetermined mode using the drive data therewith. The function of lighting is maintained despite the pulsation. According to the technical teaching of EP 2 160 629 B1 With the aid of the pulses thus emitted, objects in the illumination area can be detected and subsequently functions of the vehicle and / or actions of the driver can be triggered by the acquired data.

From the DE 10 2006 044 794 A1 a vehicle-based lidar system is known in which the transmission unit is integrated in the vehicle lamp. Also the technical teaching of DE 10 2006 044 794 A1 leaves open how particularly short pulses, which are required for a good depth resolution, should be generated.

From the DE 10 2016 205 563 A1 For example, a lighting device for a vehicle and a vehicle headlight are known. Lighting device for a vehicle according to the technical teaching of DE 10 2016 205 563 A1 is with a light source, with the useful light and / or auxiliary light can be emitted into an environment, with a sensor, at least partially detectable with the useful light reflected by the environment and / or auxiliary light, and with electronics for evaluating the detected by the sensor and / or auxiliary lights provided. Also the technical teaching of DE 10 2016 205 563 A1 leaves open how particularly short pulses, which are required for a good depth resolution, should be generated.

From the DE 20 2013 008 067 U1 is the driving of LEDs of a headlamp in response to a sensor known, which detects the light of the LED and wherein the driving of the LED is changed in response to the detected light signal. From the DE 10 2013 001 273 A1 For example, such a device is known in which the LED itself is used as a photodetector for this purpose.

From the DE 10 2013 002 668 A1 the use of the lighting device of a vehicle is known as a distance and speed measuring system. The technical teaching of DE 10 2013 002 668 A1 does not disclose how the pulses can be made particularly short.

From the CN 102 612 231 A is the control of an LED module with two anti-parallel LED chains known. The two LED chains according to the technical teaching of CN 102 612 231 A (see eg section [0004] of CN 102 612 231 A ) have a different color temperature and are driven and operated via an H-bridge. The function of the H-bridge is to be able to reverse the current direction and thus to use the current-directing characteristic of the LEDs for a selection of the different LED strands in operation. Also the technical teaching of CN 102 612 231 A leaves open how particularly short pulses, which are required for a good depth resolution, should be generated.

A similar method for the selection between two different antiparallel switched LEDs by means of polarity reversal by means of an H-bridge is from the DE 10 2006 041 013 A1 known.

Also from the JP 2005 - 158 483 A is the use of an H-bridge for driving an LED, there an organic LED, known. From there, the control of the LED with blocking pulses is known. It says: "Such as in 8th e, its preferred construction, is the forward current into the electroluminescent device (reference numeral 10 of FIGS JP 2005 - 158 483 A ) with a control pulse (reference numeral b of JP 2005 - 158 483 A ), which supplies the switching means in the form of the first transistor (reference symbol Tr1 of FIG JP 2005 - 158 483 A ), and that of the control devices (reference 22 of the JP 2005 - 158 483 A ) is fed intermittently. In this way, the electroluminescent component (reference numeral 10a of FIG JP 2005-158483 A ) are made to be turned on again and again by inverse control pulses from the control device (reference numeral 22 of FIG JP 2005-158483 A ) [...]. "The technical teaching of the JP 2005 - 158 483 A leaves open how particularly short pulses, which are required for a good depth resolution, should be generated.

From the US 2016/0 257 306 A1 and the DE 10 2016 202 505 A1 is the transfer of data between vehicles and with infrastructure devices known by the use of headlamps and taillights.

From the DE 10 2013 001 274 A1 For example, there is known a method of controlling a matrix LED headlamp that also utilizes this photo-detector property of a reverse-biased LED.

From the US 4,571,506 A For example, an apparatus and associated method for rapidly modulating the light emission of an LED is known. In the method, an LED (reference number LED of the US 4,571,506 ) by a non-modulated current of a power source ("Precision Current Regulator" in 2 of the US 4,571,506 A ) brought to a DC operating point. This DC operating point is controlled by a series-connected coil (reference numeral L2 of the US 4,571,506 A ) stabilized. By a modulated bipolar current source connected to the same LED connection (transistor with reference symbol Q4 and Q3 of the US 4,571,506 A ) an additional modulated small signal current is modulated on the LED current. A capacitor (reference numeral CI of US 4,571,506 A in theirs 2 ) differentiates one of the two differential control signals, thus ensuring a short undershoot below the 0 V line in the switch-off process, which then returns to a positive low signal value. This ensures a faster clearing of the relevant space charge zone of the LED. From the US 4,571,506 A (Column 2 row 59 to 65 of the US 4,571,506 A Moreover, it is already known that higher reverse voltage values accelerate a clearing of the space charge zone. According to the prior art and, for example, the technical teaching of US 4,571,506 A However, this reverse voltage can only accept a limited amount without damaging the LED (eg column 2 row 27 to 36 of the US 4 571 506 A ).

From the DE 197 04 496 A1 It is known that the modulation of the sensitivity of light sensors by a controller known.

From the US Pat. No. 9,653,642 B1 is a multicolor LED known. Their use in headlamps is suggested.

From the DE 10 2015 110 233 A1 For example, an image forming apparatus is known which produces a color image by sequentially radiating different illuminating colors and taking associated images.

From the DE 20 2017 103 902 U1 the use of a headlamp is known as a projection device.

All of the aforementioned writings have in common that they do not solve the speed problem for the pulsed operation of the headlights in combination.

task

In order to make LIDAR systems better and more reliable, the sensitivity of the system must be increased, for example, to increase the range or to allow the visibility of dark objects. This can be done either by a more sensitive sensor or by an increased transmission power. Sensors are already being operated close to physical limits, while transmission power is subject to legal restrictions. A significant improvement can therefore only be achieved by improving the light source, taking into account the applicable legal restrictions.

As will be explained below, in this case an essential partial task is to generate short light pulses without slow rise and fall times of the pulse width, which are caused by parasitic effects.

By the proposed technical solution, the rise and fall times of a LED light pulse should be massively shortened to produce extremely short pulses (<1ns). Thus, low-cost LEDs can be used efficiently and powerfully in applications such as Flash LIDAR. Consequently, more expensive laser diodes could be replaced by LEDs in various applications.

Preferably, the proposed device should also be able to transmit data.

This object is achieved by a device according to claim 1 and a method according to claim 4.

Solution of the task

1. 1. Verkürzung der Pulsdauer der Lichtquelle;
2. 2. Vergrößerung der Lichtquellenapertur;
3. 3. Verwendung von sichtbarem Licht statt IR-Licht, um aufgrund des natürlichen Lidreflexes in eine höhere gesetzlich geregelte Intensitätsobergrenze zu fallen.

In preparing the proposal, it was recognized that the required significant improvement can only be achieved by improving the light source, taking into account the applicable legal restrictions, and that there are three possibilities:

1. 1. shortening the pulse duration of the light source;
2. 2. magnification of the light source aperture;
3. 3. Use of visible light instead of IR light in order to fall due to the natural Lidreflexes in a higher regulatory upper limit of intensity.

By extending the headlamp functionality to the LIDAR light source, a virtue can be made out of necessity. This requires that you have a pulsatile headlight. The fact that instead of a continuous static operation, as in LED headlamps from the prior art, this now controls in pulsed mode, you can get at comparable average power and sufficient pulse rate, the current functionality of the headlamps, without for man visible difference results. In this case, a pulsed light modulation can also be superimposed on a static illumination signal.

For the purposes of this disclosure, headlights are understood to mean all lights of a vehicle, in particular all exterior lights of a vehicle. These are in particular, but not limited to: daytime running lights, low beam, main beam, decoration, direction indicators, stop lamps, reversing lamps, taillights, fog lamps, fog lamps, warning lamps and signal lamps (eg Blue light of the police or fire brigade, the yellow warning light of heavy transport etc.).

Since the light sources are located at different positions on the vehicle, an environment map (UK) can be generated by triangulation at close range.

If necessary, these can be exchanged with vehicles traveling in front and behind via a data link, which if necessary can be manufactured via the proposed light-pulse-capable headlight.

It is achieved that the radiated light time information is imposed, which can be used for distance measurement. For white headlamps, this can be implemented by using RGB LEDs instead of fluorescence LEDs (LED2 ... n) as lighting means for the actual lighting purpose, since the latter do not allow rapid modulation. It is important that a modulation is possible in at least one spectral range.

This can be achieved, for example, by virtue of the fact that in a spectral range the light of a fluorescence LED (LED2... F1 ) is extinguished and by the light of a wavelength narrow-band additional LED ( LED1 ), which can then be modulated quickly. So here is a fast modulating headlight ( SW ), which can be used for LIDAR applications.

This spectral range of the radiated and modulated wavelength can then be detected by an optical bandpass filter (FIG. F1 ) for a recipient ( PD1 ) are separated.

By using the vehicle headlamps as a LIDAR light source, a higher overall transmission power can be achieved by the large aperture compared to significantly smaller IR light sources with the same intensity. On the other hand, legally higher intensity upper limits apply in the visible wavelength range since the natural Lidreflex is used as a protective function. Thus, such an optical system operating in the visible wavelength range is superior to a system based on infrared radiation. This raises the problem of generating short light pulses ( LP ), in particular with the light source already present on the vehicle, such as headlamps ( SW ), Direction indicators, brake lights, taillights, reversing lights, etc. and possibly additionally mounted light sources.

The aim of the proposed device and the proposed method should be, by means of a first LED ( LED1 ), as the light source of such headlights ( SW1 ) as short as possible light pulses ( LP ) to create.

The afterglow of the first LED ( LED1 ) after switching off the operating current through the in the barrier layer of the first LED ( LED1 ) stored charges should now be avoided by the in the barrier layer of the first LED ( LED1 ) stored charges are not degraded by recombination, but are reduced by an active suction of these charge carriers.

In order to bring about this aspiration, it is proposed that the operating voltage of the first LED ( LED1 ) umzupolen. Furthermore, it is proposed that this polarity reversal by means of a proposed H-bridge ( H ) by means of a proposed method. To clear the Further accelerate remaining charge carriers, it is proposed to perform the actual clearing process by means of a charge pump or a voltage converter and thereby to maximize the electric field strength acting on the charge carriers during the clearing process.

In order to increase the edge steepness, a high voltage must therefore be applied to the first LED for the rising edge for a short time ( LED1 ). The slope is in the first order proportional to the applied voltage. To accelerate the falling edge, the same must be done with reverse polarity until the junction capacitance through the driver of the first LED ( LED1 ) was actively unloaded. An H-bridge ( H ) offers exactly this driving possibility. It should be noted that the overvoltage is not applied too long and the first LED ( LED1 ) is thus not burdened beyond its limits.

It was therefore recognized in the preparation of this proposal that with an H-bridge ( H ) or a comparable circuit by the brief application of a positive voltage in the direction of flow of the first LED ( LED1 ), followed by a high negative reverse voltage of the first LED ( LED1 ) the parasitic components of the first LED ( LED1 ) and their connection to the driver are reloaded faster, which leads to a significantly improved edge steepness and thus allows much shorter pulses. It was also recognized that in the parasitic elements of the first LED ( LED1 ) stored charge is finite and that the high negative voltage for sucking the stored charge carriers can therefore be fed from charge pumps with sufficient capacity, which is an increase in the following Absaugspannung negative high voltage in the reverse direction of the first LED ( LED1 ) by a multiple of the operating voltage, that is, the forward voltage in the flow direction of the first LED ( LED1 ) enable.

In a first embodiment of the proposal, a first light-emitting diode ( LED1 ), which is a cathode ( K ) and an anode ( A ), driven. The first light-emitting diode ( LED1 ) is here via her cathode ( K ) with the second connection ( 2 ) of the first transistor ( T1 ) and the third port ( 3 ) of the second transistor ( T2 ) and via its anode ( A ) with the sixth connection ( 6 ) of the third transistor ( T3 ) and the seventh port ( 7 ) of the fourth transistor ( T4 ) connected. The first connection ( 1 ) of the first transistor ( T1 ) and the fifth connection ( 5 ) of the third transistor ( T3 ) with the first positive supply voltage ( VCC1 ) connected. The fourth connection ( 4 ) of the second transistor ( T2 ) and the eighth terminal of the fourth transistor ( T4 ) are connected to the second negative supply voltage ( GND2 ) connected. The first transistor ( T1 ) can assume two operating states, a first operating state and a second operating state. Is the first transistor ( T1 ) in a first operating state, the electric current can be from the first positive supply voltage ( VCC1 ) to the cathode ( K ) of the light emitting diode ( LED1 ) flow. In the second operating state of the first transistor ( T1 ) is the first connection ( 1 ) of the first transistor ( T1 ) high-impedance with the second connection ( 2 ) of the first transistor ( T1 ) than in the first operating state the first connection ( 1 ) of the first transistor ( T1 ) with the second connection ( 2 ) of the first transistor ( T1 ) connected is. In this second operating state, the electric current can not go to the cathode ( K ) of the light emitting diode ( LED1 ) flow. The first transistor ( T1 ) assumes the first operating state when its first control connection ( G1 ) is in a first logical state and the second operating state when its first control port ( G1 ) is in a second logical state.

The second transistor ( T2 ) can assume two operating states, a first operating state and a second operating state. Is the second transistor ( T2 ) in a first operating state, the charge carriers from the third terminal ( 3 ) of the second transistor ( T2 ) to the fourth port ( 4 ) of the second transistor ( T2 ) flow. In a second operating state of the second transistor ( T2 ) is the third port ( 3 ) of the second transistor ( T2 ) high-impedance with the fourth connection ( 4 ) of the second transistor ( T2 ) connected as the third port ( 3 ) in the first operating state, with the fourth connection ( 4 ) of the second transistor ( T2 ) connected is. In this second Operating state, the charge carriers can not essentially be replaced by the second transistor ( T2 ) flow. The second transistor ( T2 ) assumes the first operating state when its second control connection ( G2 ) is in a first logical state and the second operating state when its second control port ( G2 ) is in a second logical state.

The third transistor ( T3 ) can assume two operating states, a first operating state and a second operating state. Is the third transistor ( T3 ) in a first operating state, the charge carriers from the fifth connection ( 5 ) of the third transistor ( T3 ) to the sixth terminal ( 6 ) of the third transistor ( T3 ) flow. In a second operating state of the third transistor ( T3 ) is the fifth port ( 5 ) of the second transistor ( T2 ) high-impedance with the sixth connection ( 6 ) of the third transistor ( T3 ) than in the first operating state the fifth connection ( 5 ) of the second transistor ( T2 ) with the sixth connection ( 6 ) of the third transistor ( T3 ) connected is. In this second operating state, the charge carriers can not flow substantially. The third transistor ( T3 ) assumes the first operating state when its third control connection ( G3 ) is in a first logical state and the second operating state when its third control port ( G3 ) is in a second logical state.

The fourth transistor ( T4 ) can assume two operating states, a first operating state and a second operating state. Is the fourth transistor ( T4 ) in a first operating state, the charge carriers from the seventh connection ( 7 ) of the fourth transistor ( T4 ) to the eighth connection ( 8th ) of the fourth transistor ( T4 ) flow. In a second operating state of the fourth transistor ( T4 ) is the seventh port ( 7 ) of the fourth transistor ( T4 ) high-impedance with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected as the seventh port ( 7 ) of the fourth transistor ( T4 ) in the first operating state with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected is. In this second operating state, the charge carriers can not flow substantially. The fourth transistor ( T4 ) assumes the first operating state when its fourth control connection ( G4 ) is in a first logical state and the second operating state when its fourth control port ( G4 ) is in a second logical state.

The control connections ( G1 . G2 . G3 . G4 ) are controlled by a control ( ST ) controlled. Each of the control connections ( G1 . G2 . G3 . G4 ) may be in a first logical state or in a second logical state. However, it is advantageous if the control connections ( G1 . G2 . G3 . G4 ) are in one of the three following overall states.

In the first overall state, the "PZ" state ( PZ ), all control connections ( G1 . G2 . G3 . G4 ) in a second logical state. This means that all transistors ( T1 . T2 . T3 . T4 ) are in their second operating state and thus no electric current can flow and the first LED ( LED1 ) emits no light. In pulse mode, the proposed device is preferably in the "PZ" state ( PZ ).

In the second overall state, the "PAn" state ( PAn ), the second control connection ( G2 ) and the third control terminal ( G3 ) in a first logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) in the first operating state. The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a second logical state. Thus, the first transistor ( T1 ) and the fourth transistor ( T4 ) in the second operating state. The first ED ( LED1 ) is energized in the forward direction and from the LED ( LED1 ) light is emitted. Thus, the electric current flows from the second positive supply voltage ( VCC2 ) via the third transistor ( T3 ), which is in the first operating state, and the first LED ( LED1 ) and the second transistor ( T2 ), which is in the first operating state, to the first negative supply voltage ( GND1 ). In pulse mode, the "PAn" state ( PAn ) preferably only for a very short time, the switch-on time ( τ _pp ).

In a third overall state, the "PAus" state ( Pout ), the second control connection ( G2 ) and the third control terminal ( G3 ) in a second logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) in the second operating state. The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a first logical state. Thus, the first transistor ( T1 ) and the fourth transistor ( T4 ) in the first operating state. The first LED ( LED1 ) is energized in the reverse direction with the discharge current and it emits no light. The electric discharge current now flows for the elimination of the in the first LED ( LED1 ) and the second transistor ( T2 ) and the third transistor ( T3 ) stored immediately after the polarity reversal of the first positive supply voltage ( VCC1 ) over the first transistor ( T1 ), which is in the first operating state and the first LED ( LED1 ) and the fourth transistor ( T4 ), which is in the first operating state to the second negative supply voltage ( GND2 ). In pulse mode, the "PAn" state ( PAn ) preferably only for a very short time, the clearing time ( τ _pn ).

The control ( ST ) is designed in a proposal variant that preferably no direct change from the second overall state, the "PAn" state ( PAn ), in the third overall state, the "PAus" state ( Pout ), can take place. In between, the first overall state, the "PZ" state ( PZ ), to avoid short circuits (See 2 ).

According to the proposed method, the charge carriers from the barrier layer of the first LED ( LED1 ) is removed as quickly as possible from the second overall state, the "PAn" state ( PAn ), about the first overall state, the "PZ" state ( PZ ), in the third overall state, the "PAus" state ( Pout ), switched. Describe here the switch-off process of the first LED ( LED1 ). At the beginning of Shutdown will be the first LED ( LED1 ) flows through an electric current. The system is in the second overall state, the "PAn" state ( PAn ). There are therefore charge carriers as storage charge in the first LED ( LED1 ) and light is emitted by this. Now, at a first time ( t ₀ ) into the first overall state, the "PZ" state ( PZ ), switched. The charge carriers, since they are not cleared out, only have a charge carrier lifetime ( τ ) in the first LED ( LED1 ) reduced. To speed this up, the controller ( ST ) after a delay time ( .delta.t ), which is smaller than the carrier lifetime ( τ ), a change from the first overall state, the "PZ" state ( PZ ), in the third overall state, the "PAus" state ( Pout ). Due to the polarity reversal and the fact that the delay time ( .delta.t ) is less than the carrier lifetime ( τ ), those in the depletion zone of the first LED ( LED1 ) is accelerated by means of the now possible discharge current via the first transistor ( T1 ) and the fourth transistor ( T4 ) away. It is thus possible to use shorter light pulses ( LP ) to send.

For the purposes of this disclosure, the control ( ST ) the state of the device is controlled so that for a very short on-time ( τ _pp ) an increased forward voltage ( U _DR ) in the flow direction of the first light-emitting diode ( LED1 ) at this first light emitting diode ( LED1 ) is created. Subsequently, for a very short clearing time ( τ _pn ) an amount of increased clearance ( U _RM ) in the reverse direction of the first light-emitting diode ( LED1 ) at this first light emitting diode ( LED1 ). This clearing-out time ( τ _pn ) is preferably dimensioned so that a residual charge of the storage charge after the end of the clearing time ( τ _pn ) still in the first light-emitting diode ( LED1 ), which protects them from destruction by avalanche effects.

Advantage of the proposal

1. 1. Befähigung von Scheinwerfern (SW) zur Abgabe kurzer Lichtpulse (LP).
2. 2. Erhöhung der Sendeleitung durch Vergrößerung der Apertur gegenüber gebräuchlichen LIDAR-Lichtquellen, da Scheinwerfer (SW) eine größere Abstrahlfläche haben.
3. 3. Erhöhung der Sendeleistung gegenüber gebräuchlichen LIDAR-Lichtquellen durch Verwendung von sichtbarem Licht unter Ausnutzung des Lidreflexes.
4. 4. Wegfall gesonderter Lichtquellen für LIDAR
5. 5. Höhere Empfindlichkeit und Bandbreite der Empfangsfotodioden im sichtbaren Wellenlängenbereich aufgrund geringerer Eindringtiefe des Lichts in Silizium oder die jeweils betreffenden Halbleiter.
6. 6. Ideale Positionierung der LIDAR Lichtquelle, da Scheinwerfer (SW) bereits optimiert darauf sind, den Gefahrenbereich auszuleuchten.

There are a number of advantages over today's approaches:

1. 1. Qualification of headlamps ( SW ) for emitting short light pulses ( LP ).
2. 2. Increasing the transmission line by enlarging the aperture compared to conventional LIDAR light sources, since headlights ( SW ) have a larger radiating surface.
3. 3. Increasing the transmission power compared to conventional LIDAR light sources by using visible light using the eyelid reflex.
4. 4. Elimination of separate light sources for LIDAR
5. 5. Higher sensitivity and bandwidth of the receiving photodiodes in the visible wavelength range due to lower penetration depth of the light in silicon or the semiconductor in question.
6. 6. Ideal positioning of the LIDAR light source, as headlamps ( SW ) are already optimized to illuminate the danger area.

Description of further training / trainings of the proposal

In another proposed method, the light emitting diode ( LED1 ) controlled via an H-bridge.

The first LED ( LED1 ) until a first date ( t ₀ ) in the forward direction in the so-called. "PAn" state of the H-bridge (H) energized. After the first time ( t ₀ ), at a second time ( t ₁ ) the current is reversed. That means from a second time ( t ₁ ) the LED ( LED1 ) in the "PAus" state in reverse direction until all charge carriers are removed and biased in the reverse direction. The time difference between a first time ( t ₀ ) and a second time ( t ₁ ), the delay time ( .delta.t ) for remaining in the "PZ" state, in which all the transistors ( T1 . T2 . T3 . T4 ) when changing from the "PAn" state in which the first LED ( LED1 ) in the flow direction is in the "PAus" state, in which the LED ( LED1 ) is electrically biased in the reverse direction, should again be shorter than the charge carrier lifetime ( τ ) of the electron hole pairs in the barrier layer of the first LED ( LED1 ).

In a further embodiment, the proposed device is a positive charge pump ( LppB ) (or a positive voltage transformer ( SVPB )) for fast suction of the stored charge carriers and a negative charge pump ( LPMB ) (or a negative voltage converter (SVM B)) for quick suction of the stored charge carriers added.

In the device proposed here, the positive charge pump ( LppB ) (or the positive voltage converter SVPB ) via its ninth port ( 9 ) with the positive supply voltage ( VCC ) connected. The negative charge pump ( LPMB ) (or the negative voltage converter ( SVMB )) is via its eleventh port ( 11 ) with the negative supply voltage ( GND ) connected. Other supply of charge pumps ( LppB . LPMB ) and the voltage converter ( SVPB . SVMB ) is not shown in the figures. The potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) (or the positive voltage converter ( SVPB )) above the potential of the twelfth 12 ) of the negative charge pump ( LPMB ) (or the negative voltage transformer (SMB).) The voltage potential ( VCC1 ) of the positive charge pump ( LppB ) (or the positive voltage converter ( SVPB )) is also preferably higher than that of the positive supply voltage ( VCC ). The voltage potential ( GND2 ) of the output ( 12 ) of the negative charge pump ( LPMB ) (or the negative voltage converter ( SVMB )) for quick suction of the stored charge carriers is preferably lower than that of the negative supply voltage ( GND ). The device is supplemented by the charge pumps or voltage transformers by a positive charge pump ( LppB ) (or positive voltage transformers ( SVPB ) with her tenth connection ( 10 ) as the first positive supply voltage ( VCC1 ) with the first connection ( 1 ) of the first transistor ( T1 ) and the negative charge pump ( LPMB ) (or the negative voltage converter ( SVMB )) for fast suction of the stored charge carriers with their twelfth connection ( 12 ) as the second negative supply voltage ( GND2 ) with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected is. This is the positive second supply voltage ( VCC2 ) only with the fifth terminal of the third transistor ( T3 ) and the negative first supply voltage ( GND1 ) is only with the fourth terminal of the second transistor ( T2 ) connected. It is now possible by means of a suitable evacuation voltage which is determined by the output voltages ( VCC1 . GND2 ) of charge pumps ( LPPA . LPMB ) or voltage regulators ( SVPA . SVPB ) can be generated, the charge carriers faster from the barrier layer of the first LED ( LED1 ) to remove.

In a further embodiment of the proposed method, the generation of fast light pulses ( LP ) by the premature removal of the charge carriers from a light emitting diode (LED), which is a cathode ( K ) and an anode ( A ) has proposed.

For this, the first LED ( LED1 ) first in the forward direction until a switch-off ( t ₀ ) by applying a first potential difference between the anode ( A ) and the cathode ( K ), this first potential difference with respect to the cathode ( K ) as a reference potential node is positive. Then the first LED ( LED1 ) by applying a second potential difference between the anode ( A ) and the cathode ( K ) of the first LED ( LED1 ), this second potential difference with respect to the cathode ( K ) as the reference potential node is negative. The first LED ( LED1 ) is thus in the reverse direction from the switch-off ( t ₀ ) operated.

The proposed methodology for generating short light pulses ( LP ) using light emitting diodes (LEDs) is particularly suitable for Flash LIDAR applications, TOF distance measurement, 3D imaging and optical data link applications.

It is therefore here a headlight ( SW ) for use in vehicles ( automotive ), in which the headlamp ( SW ) with at least one first LED ( LED1 ) is equipped as a light source that can be pulsed. The first LED ( LED1 ) may be a normal LED or a laser diode or an interconnection of several such diodes and / or laser diodes. Particularly preferred is a series connection of several LEDs. For this pulsation, the previously described H-bridge circuit can be used with preference. Possibly. It is desired not to operate all bulbs (LEDs) pulsed. This means that, in addition to the pulsed light component, there is then a more or less static light component which is emitted by the headlight ( SW ) is radiated. Therefore, in this case, the proposed headlamp ( SW ) further bulbs ( LED2 ... n), which then radiate this static light component. The headlight ( SW ) should preferably emit light in the visible wavelength range. This wavelength range is hereinafter referred to as radiated wavelength range ( AWB ) designated. It is proposed that the headlamp ( SW ) in at least one visible wavelength range, the light-pulse-capable wavelength range ( LPWB ), is capable of pulsed light, so light pulses ( LP ) for use as a light source for said light pulse based measurement methods. The light-pulse-capable wavelength range ( LPWB ) a partial area of the radiated wavelength range ( AWB ) of the headlamp ( SW ) or equal to the radiated wavelength range ( AWB ) of the headlamp ( SW ) be. It is thus conceivable, for example, that the headlight ( SW ) by means of light sources other than the first LED ( LED1 ), the z. B. stimulate a fluorescent agent to glow, white light emits, that yes is not light-pulse-capable, and with the help of a single first LED ( LED1 ) in the light-pulsable wavelength range ( LPWB ) emits pulsed light with the aid of the previously explained drive circuit, for example in the form of said H-bridge (H). The first LED ( LED1 ) should therefore be used in this light-pulse-wavelength range ( LPWB ) Light pulsed as Light pulse ( LP ) can radiate. It is important that this area should preferably be visible to provoke the eyelid reflex in humans, which additionally increases the permitted transmission power. This increases the range of LIDAR applications. At least the first LED ( LED1 ) is used to generate the most intense light pulses ( LP ) with the shortest possible duration preferably with the previously described H-bridge (H) driven.

Headlight variant 1

An important first variant of the proposed headlamp ( SW ) is connected to a first optically blocking bandpass filter ( F1 ), in which the locked wavelength range ( GWB ) in the visible radiated wavelength range ( GWB ) of the headlamp ( SW ) lies. The proposed headlamp ( SW ) is in this variant with at least one second LED ( LED2 ) as a further illuminant of the headlamp ( SW ) Mistake. This second LED ( LED2 ) emits at least in the non-blocked wavelength range ( NGWB ) of the radiated wavelength range ( AWB ) of the headlamp ( SW ) visible light through the first optically blocking bandpass filter ( F1 ) through. The first LED ( LED1 In contrast, light emits light in through the optically blocking bandpass filter ( F1 ) locked wavelength range ( GWB ) Light without this light of the first LED ( LED1 ) the first optically blocking bandpass filter ( F1 ) must happen. This avoids that due to a high DC component in the radiated light of the headlamp ( SW ) in the blocked wavelength range ( GWB ) it leads to an overload of the receiver ( MD ) and thus the receiving channel comes. If the locked wavelength range ( GWB ) is very narrow and is the spectral width of the radiation of the first LED ( LED1 ) also narrow, it may be a change in the color impression of the emitted light of the headlight ( SW ) be avoided.

Headlight variant 2

In a second variant of the proposed headlamp ( SW ), the headlight ( SW ) at least one first LED ( LED1a ), which are in a first wavelength range ( WB1 ) at least one second LED ( LED1b ), which in a second wavelength range ( WB2 ) and at least one third LED ( LED1c ), which in a third wavelength range ( WB3 ) shine. Particularly preferably, it has a so-called RGB LED as a light source, which typically comprises three LEDs as an LED group, in three different colors - preferably in RGB d .hzB R = red, G = green and B = blue - can radiate. These three LEDs then set the first LED ( LED1a ), the second LED ( LED1b ) and the third LED ( LED1c ). In a headlight of a vehicle as a headlight ( SW ) and other applications, the luminosity of a single RGB LED is usually insufficient. It is therefore typically the case that a first group comprises a plurality of LEDs which are in the first wavelength range ( WB1 ), the first LED ( LED1a ) in the sense of this disclosure together and that a second group of several LEDs, in the second wavelength range ( WB2 ), the second LED ( LED1b ) in the sense of this disclosure and that a third group of several LEDs, which in the third wavelength range ( WB3 ), the third LED ( LED1c ) together in the sense of this disclosure. The first wavelength range ( WB1 ), the second wavelength range ( WB2 ) and the third wavelength range ( WB3 ) are preferably visible portions of the radiated wavelength range ( AWB ) of the headlamp ( SW ). The first wavelength range ( WB1 ) is not equal to the second wavelength range ( WB2 ). Here, "equal" in the sense of this disclosure means that the wavelength ranges ( WB1 . WB2 ) are not congruent, but at least partially overlap.

Likewise, the first wavelength range ( WB1 ) not equal to the third wavelength range ( WB3 ) and the third wavelength range ( WB3 ) is not equal to the second wavelength range ( WB2 ).

The first LED ( LED1a ) and the second LED ( LED1b ) and the third LED ( LED1c ) can, as is well known in the art, be controlled by suitable PWM control so that their light appears white to a human observer. This is very important for many applications because, for example, the function of a headlight as a headlight ( SW ) is the availability of information for the driver, for example, by color or illumination amplitude of marking objects in the route. This information also includes the color information of, for example, objects in the driving route.

Headlight variant 3

The term headlight ( SW ) is very broad in this disclosure. Various headlights already known today could be made in the form as described above.

Headlamp variant 3.1

For example, in the case of a vehicle ( automotive ) a daytime running light headlamp, a dipped headlamp headlamp, a driving lamp headlamp, an indicator, a direction indicator, a warning lamp, a warning lamp for a vehicle in the blind spot (typically mounted on the exterior mirror), a stop lamp, a reversing lamp, Tail light, a fog light, a fog tail lamp, a warning light, a signal light, in particular a police or fire or other emergency vehicle blue light or other yellow warning light with or without rotation and with or without flashing action act. The list should not be complete, so further applications are conceivable.

Headlight variant 3.2

For example, in the case of a rail vehicle, it may be a driving light, a decorative light, a warning light, a reversing light, a tail light, a warning light or a signal light. The list should not be complete, so further applications are conceivable.

Headlight variant 3.3

For example, in the case of a simple luminaire, it can be used as a floodlight ( SW ) according to the description given above to a street lamp, a searchlight, a stage light or a stage headlight, a signal light (eg a railway signal light), a traffic light (eg a traffic light), an emergency light, a task light, a room lamp or a gangway or a self-illuminating billboard act. However, the list should not be complete, so further applications in other lights are expressly conceivable.

Headlight variant 4

In a further variant of the headlamp ( SW ) is the previously described headlight, the light source of a projection device. Such a projection device may, for example, be a matrix headlight that is segmented by means of a segmented light source LCD Displays amplitude-modulated individual areas of the emitted light cone or to a projection device for illuminating buildings and / or streets and / or other areas that are to be monitored for example on the presence of objects and / or people. It may be useful to hide certain areas. This is especially interesting when objects are to be marked.

Such a projection device preferably has a structurable diaphragm ( LCD ) on. Such a structurable diaphragm ( LCD ) consists, for example, of a first polarization filter, a first transparent electrode layer with spatially resolved electrodes, a layer of liquid crystals, a second transparent electrode layer with spatially resolved electrodes, the electrodes of the two electrode layers facing each other and the liquid crystal layer being between these electrodes, and a second polarization filter. The package of electrodes and liquid crystals lies between the polarizing filters. The electrodes are electrically isolated, but can be kept under voltage by controlling the filter. Depending on the voltage between an electrode of the first electrode layer and an electrode of the second electrode layer opposite thereto, the angle of rotation of the polarization plane of the light transmitted through the first polarization filter in the layer of liquid crystals and thus the transmission of this light through the second polarization filter changes. If already polarized light through the light source, eg the first ( LED1 ), the first polarization filter can also be omitted. These thus in their transmission for the light of the light source ( LED1 ) structurable diaphragm ( LCD ) represents a two-dimensional surface, which does not necessarily have to be flat. It therefore owns for the first LED ( LED1 ) radiated light spatially resolved and locally adjustable transmission coefficients for respective two-dimensional partial surfaces (transparent electrodes) of this two-dimensional surface and with respect to the perpendicular to these respective two-dimensional partial surfaces. In order to be able to image the light beam that is differently spatially different in amplitude, an optical system ( CL . PL ) for the projection of the light pulse ( LP ) from the light source, eg the first LED ( LED1 ), is sent out onto a projection screen or into a projection room. By means of the structured aperture ( LCD ) can then be the cross section of the light beam, the headlight ( SW ) leaves modulated. It is also possible to modulate individual pixels, which may for example affect the color or their temporal modulation (eg flashing). If by means of said structured aperture ( LCD ) the cross-section of the light beam which illuminates the headlamp ( SW ) leaves in this way should be modulated, it makes sense that the optics ( CI . PL ) at least one condenser lens ( CL ) or an equivalent Mirror device comprises. It is also known from the prior art that projection devices can also be realized by means of two-dimensional arrays of micromirrors ( DLP ) ie arranged in the form of a two-dimensional grid micromirrors ( DLP ) can be realized. Are such micromirror arrays ( DLP ) in the beam path, they can be used in the same way for the modulation. As a structurable diaphragm ( LCD ) in the sense of this disclosure, therefore, a structured micromirror array ( DLP ), the spatially resolved partial beams of the light beam of the illuminant, eg the first LED ( LED1 ), removed from the beam path by deflecting or otherwise modulated.

The structurable diaphragm ( LCD ) can appear before, behind and between components of the optics ( CL . PL . operating room ) are in the beam path.

The headlight ( SW ) can then be set up to use objects ( O ) in its luminous area selectively by appropriate lighting, while other areas are not marked. For example, it is conceivable to illuminate pedestrians or objects recognized as potentially dangerous by the system in a suitable color, while the rest of the objects in the headlight area are, for example, illuminated in white. The headlight ( SW ) can also be set up to O ) in its luminous area selectively additionally by a temporal pattern of the illumination, in particular by flashing and / or by different colored lighting to mark. For example, it is conceivable to illuminate said dangerous objects with a temporally fluctuating brightness in a predetermined pattern, while other objects ( O ) are illuminated constantly. In this way, for example, oncoming vehicle drivers can be specifically warned. This results in two modulation channels for the light emitted by the headlight: one for the communication vehicle to vehicle with very short, imperceptible to humans light pulses ( LP ), which should not be recognizable to the driver and a channel for communicating vehicle to driver with relatively slow human perceivable color and / or brightness modulations, where the driver is that of the vehicle or that of another car can.

Headlight variant 5

It is further proposed, such a headlight ( SW ) in a vehicle ( automotive ). There are all types of vehicles in question: automotive . truck , Motorcycles, rail vehicles, bicycles, all types of vessels such as ships, boats and submarines, aircraft, spacecraft, special vehicles such as tracks and construction vehicles, mobile robots, industrial trucks, etc.

Here, the application is described in the vehicle preferred. The application is not limited to this. The load also includes other vehicles such as the vehicles mentioned above. Such a proposed vehicle ( automotive ) comprises at least one headlight ( SW ), as previously described.

based method

With the help of the previously described headlamp ( SW ) can now light in particular as a light pulse ( LP ) suitable for use in measuring devices. The basic method comprises the emission of a light pulse ( LP ) or a sequence of light pulses ( LPF ) through the first LED ( LED1 ). At a light pulse ( LP ) may be for the purposes of this disclosure, both a short-term power on as well as a brief turn off the first LED ( LED1 ) act. It is in the broadest sense short-term intensity modulations. So it can be sent out so to speak positive light pulses, in which the first LED ( LED1 ) is turned on at a first time (t1) and after a short time at a second time ( t2 ) is switched off again. So it can also be negative light pulses ( LP ), where the first LED ( LED1 ) is already switched on first and then at a first time ( t1 ) is turned off and after a short time at a second time ( t2 ) is turned on again. It is also possible that the light emission of the first LED ( LED1 ) has a positive equivalent to which the light pulses ( LP ). A light pulse ( LP ) is in the sense of this disclosure thus characterized in that the light output of the first LED ( LED1 ) radiated visible light from a first light output to a second light output at a first time ( t1 ), or at a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first light output. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

process variant

It is further a method for emitting light by means of the previously described headlight ( SW ), in which the first LED ( LED1a ) of the headlamp ( SW ) visible light in a first wavelength range ( WB1 ) and the second LED ( LED1b ) of the headlamp ( SW ) visible light in a second wavelength range ( WB2 ), which is not equal to the first wavelength range ( WB1 ). It then takes the emission of a light pulse ( LP ) or a sequence of light pulses ( LPF ) through the first LED ( LED1 ). The distance between the light pulses ( LP ) can be the same or modulated (= varying). The distances of the light pulses ( LP ) within the light pulse sequence ( LPF ) can encode information. A light pulse ( LP ) in the sense of this disclosure is characterized in that the light output of the light emitted by the first LED ( LED1 ) radiated visible light from a first light output to a second light output at a first time ( t1 ), or at a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first light output. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

process variant

In a second variant of the method, a method for emitting light by means of the previously described headlight ( SW ), in which the first LED ( LED1a ) of the headlamp ( SW ) visible light in a first wavelength range ( WB1 ) (first color) and the second LED ( LED1b ) of the headlamp ( SW ) visible light in a second wavelength range ( WB2 ) (second color), which is not equal to the first wavelength range ( WB1 ). In contrast to the first variant of the method, however, the amplitude of a first LED ( LED1 ), but the color angle of the radiation of the two LED bulbs ( LED1a . LED1b ). The sum of the first LED ( LED1a ) and the second LED ( LED1b ) emitted light power remains preferably the same, only the color angle is changed by changing the two light outputs of the first LED ( LED1b ) and the second LED ( LED1b ) changed relative to each other. The proposed method variant therefore comprises the emission of a color angle light pulse ( FLP ) or a sequence of color angle light pulses ( FLPF ) through the first LED ( LED1a ) and the second LED ( LED1b ). The distance of the color angle light pulses ( FLP ) can be the same or modulated (= varying). The distances of the color angle light pulses ( FLP ) within the color angle light pulse sequence can encode information. Here is a color angle light pulse ( FLP ), characterized in that the light output of the light emitted by the first LED ( LED1a ) radiated visible light from a first light output of the first LED ( LED1a ) to a second light output of the first LED ( LED1a ) at a first time ( t1 ), or at a second, the first time ( t1 ) subsequent date ( t2 ) to the first light output of the first LED ( LED1a ) and simultaneously, and preferably synchronously, the light output of the second LED ( LED1b ) radiated visible light from a first light output of the second LED ( LED1b ) to a second light output of the second LED ( LED1b ) at a first time ( t1 ) or increased to a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first light output. If the synchronicity can actually be achieved, one would be able to measure no change in intensity, but only a pulsed color change of preferably a few ns. This has the advantage that the light intensity remains the same. The cumulative light output from the sum of the light output of the second LED ( LED1b ) radiated visible light and by the first LED ( LED1a ) emitted light then changes during the emission of the color angle light pulse ( FLP ) preferably by not more than 10%. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

process variant

An exact synchronicity of the control of the two LEDs, as described in the preceding method variant, but can be achieved neither temporally nor in terms of amplitude. Therefore, in reality rather a short-term amplitude fluctuation can be realized together with a pulse-shaped color variation. It is therefore proposed a third variant of the method, which is a method for emitting light, in particular combined color / light pulses by means of the headlight described above (US Pat. SW ). The first LED ( LED1a ) of the headlamp ( SW ) visible light in a first wavelength range ( WB1 ) and the second LED ( LED1b ) of the headlamp ( SW ) visible light in a second wavelength range ( WB2 ) which is not equal to the first wavelength range ( WB1 ). The proposed third method variant comprises the emission of a modulated color angle light pulse ( MFLP ) or a sequence of modulated color angle light pulses ( FMLPF ) through the first LED ( LED1a ) and the second LED ( LED1b ). The distance of the combined modulated color angle light pulses ( FMLP ) can be the same or modulated (= varying). The distances of the modulated color angle light pulses ( FMLP ) within the color angle light pulse sequence (FMLPF) can encode information. A modulated color angle light pulse (MFLP) is characterized in that the light output of the light emitted by the first LED ( LED1a ) radiated visible light from a first light output of the first LED ( LED1a ) to a second light output of the first LED ( LED1a ) at a first time ( t1 ), or at a second, the first time ( t1 ) subsequent date ( t2 ) to the first light output of the first LED ( LED1a ) and that the light output of the second LED ( LED1b ) radiated visible light from a first light output of the second LED ( LED1b ) to a second light output of the second LED ( LED1b ) at a first time ( t1 ) or increased to a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first light output. The first summation light power from the sum of the first light power of the second LED ( LED1b ) and the first light output of the first LED ( LED1a ) and the second sum light power from the sum of the second light power of the second LED ( LED1b ) and the second light output of the first LED ( LED1a ), however, differ at least at one point in time between the first time ( t1 ) and the second time ( t2 ) preferably more than 10%. This can be caused, for example, by the fact that the light pulses ( LP ) do not start at exactly the same time or have a different maximum height or a different shape. Since LEDs of different colors can be used, this may be easily possible due to different designs and manufacturing variations. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

process variant

The method variants described above and the basic method can also be used for the data traffic. It is therefore a method of transmitting data by means of light of a previously described headlight ( SW ) proposed. The proposed method comprises emitting a sequence of light pulses ( LP ) (Light pulse sequence ( LPF )) through the first LED ( LED1 ) or a sequence of color light pulses (color light pulse sequence ( FLPF )), whereby by different temporal distances of the light pulses ( LP ) or color light pulses ( FLP ) and / or the frequency spectrum of the distances of the light pulses ( LP ) or the color light pulses ( FLP ) or the phase position of the light pulses ( LP ) or the color light pulses ( FLP ) to one another, in particular within a light pulse sequence ( LPF ) or color light pulse sequence ( FLPF ) a data information is coded or by different light pulse amplitudes of the light pulses ( LP ) or color angle modulation amplitudes of the color light pulse ( FLP ) a data information is encoded. In a color light pulse in the sense of this disclosure, the radiation intensity remains during the transmission of the color light pulse ( FLP ) is typically substantially constant. The characterization "essentially" refers to unavoidable deviations. The total intensity (total light output) of a color light pulse ( FLP ) remains for the duration of the color light pulse ( FLP ) constant and it is only the color, so for example the color angle, pulsed. The proposed method also includes receiving the light pulses ( LP ) or color light pulses ( FLP ) in a receiver and decoding the data information contained therein. Since it is a pulsed data transmission by means of broadband light pulses ( LP ) or by means of broadband colored light pulses ( FLP ), the spectrum of the light modulation signal impressed on the emitted light is very wide. Therefore, so-called ultra-wide-band algorithms can be used very well, which then reduce interference signals efficiently and with a high suppression rate in their influence. For example, the received signal may be convolved with the prototype of an expected transmit pulse train, highlighting portions in the received signal that correlate to this expected transmit pulse train. It is also possible, for example, to generate a scalar product between the received signal and such a prototype signal by multiplying the two signals and then low-pass filtering to produce an improved signal-to-noise ratio.

Due to the proposed control, it is thus possible with the aid of a Spread Spectra method, the light pulses ( LP ) or color light pulses ( FLP ) especially when receiving these light pulses ( LP ) after reflection as reflected light pulses ( RLP ) reliably disconnect us from the background of the noise so that we can still transmit data over long distances when photons from the transmitter ( LED1 ) to the recipient ( MD ) can get. It is proposed in this fourth variant of the method that the transmission of data by means of light of a headlamp ( SW ) as described above. The headlight ( SW ) is in Part of a vehicle ( automotive ). The proposed fourth method variant includes providing status information of the vehicle ( automotive ) as data information to be transmitted before the emission of a sequence of light pulses ( LPF ) through the first LED ( LED1 ). For example, it is conceivable to transmit the direction of travel and speed to the outside with the headlights, for example, to vehicles in front or to signal brake operations in their intensity along with speed information, for example, following vehicles via the brake lights. Also, other information can be exchanged in this way.

As sub-variant of the method based thereon, a change in the state of devices of the traffic infrastructure can take place as a function of the received and decoded data information. For example, it is conceivable that control tasks in the context of smart home applications such as the opening of garage doors or the switching on and off of lights, etc. are controlled. Likewise, it is conceivable that devices of the infrastructure or traffic infrastructure, for example traffic lights ( AMP ) to be controlled. Particularly preferred is a coupling of the vehicle ( automotive ) to the Internet, the vehicle ( automotive ) by means of its headlamps (for the purposes of this disclosure) ( SW ) Sends data and the traffic infrastructure, for example, via street lights data returns.

As a sub-variant of the method based thereon, a change in the state of another vehicle ( automotive ) depending on the received and decoded data information. Such a state change may, for example, affect a device in the other vehicle ( automotive ), in particular an optical and / or acoustic display eg for the vehicle driver of the second vehicle and / or a change of important state parameters such as speed and direction or of formations of the light beam of the headlights of the second motor vehicle.

There is also a method of transmitting data by means of light of a headlamp ( SW ), the headlamp ( SW ) Is part of a luminaire. After providing data information to be transmitted before emitting a sequence of light pulses ( LPF ) through the first LED ( LED1 ) the emission of a sequence of light pulses ( LPF ), wherein the data information to be transmitted in the sequence of light pulses ( LPF ) is encoded. In a further variant, the sequence of light pulses ( LPF ) by a corresponding device of a second lamp and the decoding of the sequence of light pulses ( LPF ) encoded data to be transmitted to obtain the received and decoded data information. The state of the second lamp or a device connected thereto is then changed by controlling it in response to the received and decoded data information.

In general, therefore, a method for data transmission to a headlight ( SW ), in which the headlamp ( SW ) at least one first LED ( LED1 ) as a light source in which the first LED ( LED1 ) is at least in certain periods, the dark times, not energized and therefore not lit. During these dark periods, the first LED ( LED1 ) then as the recipient ( MD ) be used. This can be on the one hand the receiver ( MD ) of a distance measuring device in cooperation with another headlight ( SW ) of the proposed type. The method for data transmission then comprises the steps of detecting at least one lamp voltage ( VLED1 ) on the at least one LED ( LED1 ) in a dark time by means of an H-bridge control instrument ( HCV ) for measuring the voltage drop ( VLED1 ) about the load ( LED1 ) in the H-bridge ( H ), ie typically via the first light-emitting diode ( LED1 ). The value thus determined can be amplified and filtered appropriately and then with a threshold value ( SCHW ). Is the level of the voltage drop ( VLED1 ) after the appropriate filtering above the threshold ( SCHW ), a first logical state can be generated. Is the level of the voltage drop ( VLED1 ) below the threshold ( SCHW ), a second logical state can be generated. The data and / or a data clock on which the data is based can then be closed by an evaluation circuit at the time sequence of the first and second logical states. In this context it should be pointed out that the parasitic capacitances of the LEDs for illumination purposes are generally so large that the actual data rates are very small. For maintenance purposes, this can be useful. So here is the generation of a date depending on the detected illuminant voltage ( VLED1 ).

process variant

As the fifth method variant, a method for determining a distance ( d ) between an object ( O ) and a vehicle ( automotive ) proposed. The fifth method variant proposed here comprises the emission of a light pulse ( LP ) by means of a headlamp ( SW ), as described above, in the Exterior of a vehicle ( automotive ), the reflection of the emitted light pulse ( ELP ) on an object ( O ) as a reflected light pulse ( RLP ) and the reception of the reflected light pulse ( RLP ) by a receiver ( EM ), the part of the vehicle ( automotive ). This is followed by the determination of the light transit time ( TOF ) and closing on the distance ( d ) between object ( O ) and vehicle ( automotive ) by a computing device ( BV ) inside the vehicle ( automotive ). For the determination of such transit times are different light pulse based techniques from the prior art (eg EP 2 783 232 B1 ) known. The disclosure presented here focuses on optimizing the generation of light pulses and the resulting new applications. Instead of the emission in the exterior of a motor vehicle and the emission in the interior of a motor vehicle by means of various interior lights, for example, for interior monitoring, seat occupancy recognition, etc. possible. It should also be mentioned that instead of the distance measurement and the detection of aerosols, ie, for example, fog, is possible. For example, a separate optics evaluate the scattered light of a proposed headlamp. In particular, the scattered light emitted by the proposed headlight pulses ( LP ) then enables detection of fog situations.

For this purpose, for example, the measuring device ( MV . MD ) of the 27 spaced from the proposed headlight ( SW ) assembled. The optics ( OP3 ) of the measuring device ( MV . MD ) with its optical axis is not parallel to the optical axis of the optics ( operating room ) of the illuminant ( LED1 ), aligned so that the optical axis of the optics ( OP3 ) of the measuring device ( MV . MD ) the optical axis of the optics ( operating room ) of the illuminant ( LED1 ) at a point spaced from the vehicle intersects. It is then measured a mean distance. Does this fall below a minimum value or is the amplitude of the scattered light pulses ( LP ) of the proposed headlamp ( SW ), which from the optical axis of the optics ( operating room ) of the illuminant ( LED1 ) into the measuring device ( MV . MD ) by scattering, greater than a maximum value, a fog alarm can be triggered.

process variant

As the sixth method variant, a method for determining a distance ( d ) between an object ( O ) and a vehicle ( automotive ), in which additional to the light transit time of the emitted light pulse ( LP ) in contrast to the process variant 5 In addition, the received amplitude is also evaluated and in addition to the reflectivity of the reflecting object ( O ) is closed.

It is then, for example, a method for determining a reflectivity of an object ( O ) in the lighting area of a proposed headlamp ( SW ). The process begins with the emission of a light pulse ( LP ) by means of a proposed light-pulsed headlamp ( SW ) in the exterior of a vehicle ( automotive ). After the reflection of the emitted light pulse ( ELP ) on the object ( O ) as a reflected light pulse ( RLP ), the reception of the reflected light pulse ( RLP ) by a receiver ( EM ), the part of the vehicle ( automotive ) and the final determination of the reflectivity ( REF ) of the object ( O ) by a computing device ( BV ) inside the vehicle ( automotive ). Since a distance measurement is possible in this way, the distances thus determined ( d ).

This reflectivity can also be determined spectrally selectively. It is in the case of a method for determining a spectrally selective reflectivity of an object ( O ) in the illumination area of a headlamp ( SW ). The method now begins with the emission of a colored light pulse ( FLP ) by means of a proposed color-light-capable headlamp ( SW ) in the exterior of a vehicle ( automotive ). In this case, the emitted color light pulse is composed of a first partial light pulse of a first color and a second partial light pulse of a second color, which are typically emitted by a first LED (FIG. LED1a ) and a second LED ( LED1b ) were emitted. The total intensity (total light power) of the partial light pulses preferably remains essentially for the duration of the colored light pulse ( FLP ) constant. It is preferably substantially only the color, so for example the color angle, pulsed. After the reflection of the emitted color light pulse ( FLP ) on the object ( O ) as a reflected color light pulse ( RELP ) run a first reflected partial light pulse as a reflection of the first partial light pulse and a second reflected partial light pulse as a reflection of the second partial light pulse back to the vehicle. In the reflection on the object, the first partial light pulse and the second partial light pulse were reflected to different degrees due to their different color, because the reflectivity of the object is different for these colors. The object is therefore typically colored. It follows the reception of the reflected color light pulse ( RFLP ) as a composition of these reflected partial light pulses by a receiver ( EM ), the part of the vehicle ( automotive ) and the determination of the spectral reflectivity ( SREF ) of the object ( O ) from the reflectivities of the partial light pulse measurements by a computing device ( BV ) inside the vehicle ( automotive ).

process variant

In a seventh variant of the method, a method for determining a two-dimensional environment map ( UK ) for a vehicle ( automotive ) proposed. This includes determining a first distance ( d1 ) to an object ( O ) by means of a first headlamp ( SW1 ) according to the fifth or sixth method variant and determining a second distance ( d2 ) to an object ( O ) by means of a second headlamp ( SW2 ) according to the 5th or 6th method variant. The environment map ( UK ) can contain reflectivities and distances. If more than one color is emitted pulsed, the environmental map may also include spectral values. This is followed by the calculation of a two-dimensional position corresponding to the coordinate system of the environment map ( UK ) of the vehicle ( automotive ) by coordinate transformation from the first distance ( d1 ) and the second distance ( d2 ). If further parameters are desired (eg reflection possibly broken down into different colors) these will also be calculated here.

process variant

In an eighth method variant, therefore, a method for determining a three-dimensional environment map ( UK ) for a vehicle ( automotive ) proposed. It involves determining a first distance ( d1 ) to an object ( O ) by means of a first headlamp ( SW1 ) according to the fifth method variant and determining a second distance ( d2 ) to an object ( O ) by means of a second headlamp ( SW2 ) according to the fifth method variant and determining a third distance ( d2 ) to an object ( O ) by means of a third headlamp ( SW3 ) according to the 5th method variant. For a three-dimensional environmental map to be created, the first headlight ( SW1 ) and the second headlight ( SW2 ) and the third headlight ( SW3 ) do not lie on a line. The environment map ( UK ) can contain reflectivities and distances. If more than one color is emitted pulsed, the environment map ( UK ) also include spectral values. This is followed by the calculation of a three-dimensional position corresponding to the coordinate system of the three-dimensional environment map ( UK ) of the vehicle ( automotive ) by coordinate transformation from the first distance ( d1 ) and the second distance ( d2 ) and the third distance ( d3 ). If further parameters are desired (eg reflection possibly broken down into different colors) these will also be calculated here.

The data of such an environmental map, for example, can be used to measure the distance between the vehicle ( automotive ) and a roadway ( FB ) due to several determined three-dimensional positions within the environment map ( UK ).

Of course, other vehicles may also be part of such an environment map ( UK ). It can therefore also be a distance between the vehicle ( Kfz1 ) and another vehicle ( Kfz2 ) due to several determined three-dimensional positions within the environment map ( UK ).

The proposed principle can also be used to construct a camera in which not only brightness information but also distance information is determined for each pixel. Such cameras are referred to below as the TOF camera system. Similar TOF camera systems are known from the prior art, for example, from DE 10 2008 018 718 B4 and the DE 10 2009 020 218 B3 and the writings citing these forwards and backwards. Such a TOF camera system includes a camera optic ( OP3 ) which forms an image based on the wave of the returning reflected light pulse ( LP ) generated. At the heart of such a TOF camera system is an image sensor, which is operated by the control unit for short periods ( ST ) by means of a synchronization signal ( sync ) can be switched light-sensitive or light-insensitive. This image sensor is typically a two-dimensional arrangement of temporally controllable photosensitive sensors ( TOFIMG ). A measuring device ( MV ) evaluates the signals of the two-dimensional arrangement of time-controllable photosensitive sensors ( TOFIMG ) and generates a brightness and a runtime image from the determined data. It is proposed that the device described above with the proposed headlight ( SW ) and thus to achieve a greater range than possible in the prior art. The proposed TOF camera system therefore comprises at least a first LED ( LED1 ) as a light source. The headlight ( SW ) of the TOF camera system can comprise further lighting means, for example, to be able to emit light for illumination purposes. Preferably, however, it is the already described RGB headlamp ( SW ), which can thus be made light and colorable. Can. To achieve the longer range, the headlight shines ( SW ) in the visible wavelength range light in a radiated wavelength range ( AWB ). As a result, the eyelid reflex can be used and the radiation power and thus the range can be increased. The headlight ( SW ) of the TOF camera system is then preferred in at least one visible wavelength range, the light-pulse-capable wavelength range (US Pat. LPWB ), capable of pulsing light. The light-pulse-capable wavelength range ( LPWB ) is in again preferably a subregion of the radiated wavelength range ( AWB ) of the headlamp ( SW ) or equal to the radiated wavelength range ( AWB ) of the headlamp ( SW ). Of course, the headlamp can also emit light in areas other than the visible wavelength range. Incidentally, this applies to the entire disclosure. This will not be further explored here. The first LED ( LED1 ) can in this light-pulse wavelength range ( LPWB ) Emit light. A control device ( ST ) controls the photosensitivity of the controllable photosensitive sensors ( TOFIMG ) of the two-dimensional arrangement of time-controllable photosensitive sensors ( TOFIMG ) and the emission of light pulses ( LP ) through the first light source ( LED1 ) to measure the time of flight on this masis by means of the two-dimensional arrangement of time-controllable photosensitive sensors ( TOFIMG ). At the same time, the headlight ( SW ) Emit light for illumination purposes. Preferably, the activation of the first lighting means ( LED1 ) using the proposed H-bridge ( H ) for controlling and supplying the first LED ( LED1 ) with electrical energy. The H Bridge ( H ) is preferred by the control device ( ST ) controlled. The TOF camera system preferably has an optically blocking bandpass filter ( F1 ) passing through the optical bandpass filter ( F1 ) locked wavelength range in the visible radiated wavelength range ( AWB ) of the headlamp ( SW ) lies. Preferably, the proposed TOF camera system may comprise at least one second LED ( LED2 ) as a further illuminant of the headlamp ( SW ), which at least in the non-blocked wavelength range ( NGWB ) of the radiated wavelength range ( AWB ) of the headlamp ( SW ) visible light ( SL ) through the optically blocking bandpass filter ( F1 ) and wherein the first LED ( LED1 ) Light in through the optically blocking bandpass filter ( F1 ) locked wavelength range ( GWB ) emitted without this light of the first LED ( LED1 ) the optically blocking bandpass filter ( F1 ) must happen.

It is now advantageous to have such a TOF camera system in a vehicle ( automotive ).

Most preferably, the headlight ( SW ) of the TOF camera system around an RGB headlight. The headlight ( SW ) of the TOF camera system then has at least one first LED ( LED1 ), which are in a first wavelength range ( WB1 ) and at least one second LED ( LED2 ), which in a second wavelength range ( WB2 ) and at least one third LED ( LED3 ), which in a third wavelength range ( WB3 ) shine. As before, the first wavelength range ( WB1 ) and the second wavelength range ( WB2 ) and the third wavelength range ( WB3 ) each have a subregion of the radiated wavelength range ( AWB ) of the headlamp ( SW ) of the TOF camera system. The first wavelength range ( WB1 ) is not equal to the second wavelength range ( WB2 ) and the first wavelength range ( WB1 ) is not equal to the third wavelength range ( WB3 ) and the third wavelength range ( WB3 ) is not equal to the second wavelength range ( WB2 ). By the control device ( ST ), the first LED ( LED1 ) and the second LED ( LED2 ) and the third LED ( LED3 ) can now preferably be controlled so that their light appears white to a human observer.

Of course, a headlight ( SW ) of such a TOF camera system also have only two LEDs. As a rule, however, no white light impression can be achieved. The advantage of a TOF camera system with at least two differently colored LEDs, however, is that the first LED ( LED1 ) and the second LED ( LED2 ) can be controlled so that the headlight ( SW ) of the TOF camera system for emitting color angle pulses ( FLP ) be able to. This makes it possible, runtime images not as a function of light propagation time of the amplitude, but of light transit times of a color angle pulse ( FLP ), which is a completely different method than the methods known in the art. It is therefore particularly advantageous if the determination of the distance information uses the transit time of a color angle pulse. (And possibly not just an amplitude pulse.

It is particularly advantageous if certain areas recognized as critical (eg oncoming vehicles) are protected from the light pulses under certain conditions ( LP ) and color light pulses ( FLP ) can be protected. For this it is necessary to use the headlight ( SW ) of the TOF camera system to operate as a projection device, wherein, for example, a LCD Shadow mask is used to hide the areas to be protected. For this purpose, the TOF camera system preferably again has a structurable diaphragm ( LCD ), which is preferably a two-dimensional surface suitable for that of the first LED ( LED1a ) and possibly second LED ( 1b) radiated light has spatially resolved and locally adjustable transmission coefficients for respective two-dimensional partial surfaces of this two-dimensional surface and with respect to the perpendicular to these respective two-dimensional partial surfaces. In addition, then a projection optics ( CL . PL ) for the projection of the light pulse ( LP ) or color light pulse ( FLP ) on a projection screen or in a projection room into it necessary.

In contrast to the prior art, the proposed TOF camera system is intended to be able to work as a lighting device. In this sense, it makes sense if the TOF camera system is set up to selectively mark objects in its luminous area, for example by using said shadow mask. This marking can also take place modulated in time. Therefore, the TOF camera system is preferably set up to selectively mark objects in their luminous area by a temporal pattern of the illumination, in particular by blinking and / or by differently colored illumination.

list of figures

• 1 1 schematically shows a device in the form of a first exemplary H-bridge (H), which contains the luminous means, the first LED (FIG. LED1 ) drives or shuts off.
• 2 1 schematically shows a device in the form of a first exemplary H-bridge (H), which contains the luminous means, the first LED (FIG. LED1 ) drives or shuts off with a positive charge pump ( LppB ) and a negative charge pump ( LPMB ) for sucking off the stored charge carriers.
• 3 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a positive charge pump ( LppB ) and a negative charge pump ( LPMB ) for sucking off the stored charge carriers and with a positive charge pump ( LPPA ) and a negative charge pump ( LPMA ) for generating a short turn-on edge.
• 4 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a pair from a positive charge pump ( LPPA ) and a negative charge pump ( LPMA ) for generating a short turn-on edge.
• 5 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a positive charge pump ( LPPA ) for generating a short turn-on edge.
• 6 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a negative charge pump ( LPMA ) for generating a short turn-on edge.
• 7 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a negative charge pump ( LPMB ) for sucking off the stored charge carriers.
• 8th 1 schematically shows an apparatus in the form of a first exemplary H-bridge (FIG. H ), which is the light source, the first LED ( LED1 ) drives or shuts off with a positive charge pump ( LppB ) for sucking off the stored charge carriers.
• 9 2 shows schematically how a transition from an operating state of the first H-bridge (FIG. H ) in the next operating state of the first H-bridge ( H ) is possible.
• 10 shows the current flow in the proposed pulsation method ( a ) and alternative driving techniques ( b . c ) from the prior art.
• 11 shows the current profile in the proposed pulsation method (and the course of the voltage at the first light emitting diode ( LED1 )).
• 12 equals to 3 with the difference that in addition an H-bridge control instrument ( HCV ) for measuring the voltage drop across the load in the first H-bridge ( H ), so typically the lighting voltage ( VLED1 ) via the first light-emitting diode ( LED1 ), is provided in order to ensure the functionality of the activation by the first H-bridge ( H ) and the first LED ( LED1 ) of the H-bridge ( H ) during operation.
• 13 equals to 12 with the difference that a first H-bridge control instrument ( HCI1 ) for measuring the current through the first switching element of the H-bridge, that is typically by the first transistor ( T1 ), here by detecting the voltage drop across the first transistor ( T1 ) and a second H-bridge control instrument ( HCI2 ) for measuring the current through the second switching element of the H-bridge, that is typically through the second transistor ( T2 ), here by detecting the voltage drop across the second transistor ( T2 ) and a fourth H-bridge control instrument ( HCI3 ) for measuring the current through the third switching element of the H-bridge, that is typically by the third transistor ( T3 ), here by detecting the voltage drop across the third transistor ( T3 ) and a fourth H-bridge control instrument ( HCI4 ) for measuring the current through the fourth switching element of the H-bridge, that is typically by the fourth transistor ( T4 ), here by detecting the voltage drop across the fourth transistor ( T4 ) and, in order to ensure the functionality of the drive through the first H-bridge (H) and the first LED ( LED1 ) of the H-bridge ( H ) to be able to control during operation in particular by inference to the flowing current.
• 14 shows how 9 schematically how a transition from one operating state to the next operating state is possible. Now, however, it is assumed that when the transition from the "PAn" state to the "PAus" state, a different cross current than when transitioning from the "PAus" state to the "PAn" state is desired. (See also description of 12 .)
• 15 shows a proposed headlamp system schematically simplified and functionally symbolic, the lighting means, the first LED ( LED1 ) in both pulsed mode ( QDB ) as well as bulbs for quasi continuous lighting ( QDB ) can be used.
• 16 shows an exemplary modified H-bridge (H) for use in a device gem. 15 and in modification of 3 , In contrast to the H-bridge ( H ) of the 3 can the H-bridge ( H ) of the 16 and the first LED ( LED1 ) now both for the delivery of optimized light pulses ( LP ) as well as for the optimized light emission for illumination purposes by being connected between charge pumps ( LPPA . LppB . LPMA . LPMB ) based energy supply and direct energy supply from the supply voltage sources ( VCC1 . VCC2 . VCC3 . GND1 . GND2 ) can be switched.
• 17 equals to 16 with the difference that the charge pumps ( LppB . LPPA . LPMA . LPMB ) from a fifth positive supply voltage ( VCC5 ) and a fifth negative supply voltage ( GND5 ) and for the operation as a lighting means of a lighting device, the supply directly from a sixth supply voltage source ( VCC6 ) and a sixth negative supply voltage ( GND6 ), whereby both the fifth positive supply voltage ( VCC5 ) as well as the sixth positive supply voltage ( VCC6 ) as well as the fifth negative supply voltage ( GND5 ) as well as the sixth negative supply voltage ( GND6 ) are preferably outputs of a regulated voltage source.
• 18 shows an exemplary modified H-bridge (H) for use in a device gem. 15 and in modification of 3 , In contrast to the H-bridge of 3 can the H-bridge ( H ) of the 18 and the first LED ( LED1 ) now both for the delivery of optimized light pulses ( LP ) as well as for the optimized light output for lighting purposes, by now using two analog multiplexers between the direct power supply from a third positive supply voltage source ( VCC3 ) and a fourth positive supply voltage source ( VCC4 ) for quasi-continuous operation ( QDB ) of the first LED ( LED1 ) as a lighting means of a lighting device on the one hand and the direct power supply from a first positive supply voltage source ( VCC1 ) and a second positive supply voltage source ( VCC2 ) for pulsed operation (GPB) as a pulsed LED ( LED1 ) On the other hand can be switched.
• 19 shows the simplest variant with a supply from a common voltage source with a positive basic supply voltage ( VCC ), which is, for example, the voltage supply from the board network of a motor vehicle ( automotive ) can act. The supply in pulsed mode (GPB) via a common second positive supply voltage ( VCC2 ) and the common negative supply voltage ( GND ). In quasi-continuous operation ( QDB ), the power supply of the first light emitting diode ( LED1 ) via the third positive supply voltage ( VCC3 ) and the common negative supply voltage ( GND ).
• 20 equals to 19 with the difference that the eighth transistor ( T8 ) has been omitted. The analog multiplexer for switching the supply voltage between the second supply voltage ( VCC2 ) and the third supply voltage ( VCC3 ) is therefore no longer as in 19 on the H-bridge ( H ) but by parallel arrangement of the twelfth transistor ( T12 ) to the third transistor ( T3 ) Became part of the H-bridge (H). The supply in pulsed mode (GPB) via a common second positive supply voltage ( VCC2 ) and the common negative supply voltage ( GND ). In quasi-continuous operation ( QDB ), the power supply of the first light emitting diode ( LED1 ) via the third positive supply voltage ( VCC3 ) and the common negative supply voltage ( GND ).
• 21 shows a particularly simple variant of the proposed device. The light source, the first LED ( LED1 ), by means of an H-bridge ( H ) from a first half-bridge ( HB1 : T1 . T2 ) and a second half bridge ( HB2 : T3 . T4 ) supplied with electrical energy.
• 22 corresponds to the state diagram of 9 However, the state diagram is now for the operation of the exemplary modified H-bridge ( H ) of the 16 and 21 was modified.
• 23 equals to 20 with the difference that here two shunt resistors, a first shunt resistor ( Rs1 ) and a second shunt resistor ( Rs2 ) are drawn. These shunt resistors ( Rs1 . Rs2 ) can be used by means of the voltage drop across these shunt resistors ( Rs1 . Rs2 ) on the current through the relevant half-bridge ( HB1 . HB2 ) of the H-bridge ( H ) close.
• 24 equals to 15 with the exemplary difference that an internal construction of the H-bridge, for example, the 15 and where the energy reserves ( C_LPPB . C_LPPA . C_LPMB . C_LPMA ) of the charge pumps ( LppB . LPPA . LPMB . LPMA ) are shown by way of example. Instead of the charge pumps ( LppB . LPPA . LPMB . LPMA ), voltage transformers ( SVPB . SVPA . SVMB . SVMA ) be used. In the case of the energy reserves of the case, it can then also be inductances ( L_SVPB . L_SVPA . L_SVMB . L_SVMA ) or similar act.
• 25 equals to 14 with the exemplary difference that, by way of example, a first H-bridge control unit ( HC1 ) is provided, which by means of a photosensitive sensor, here for example a first photodiode ( PD1 ), the light emission of the light source, here the exemplary first LED ( LED1 ), and so a readjustment of the control, in particular by adjusting the charge pump voltage of the charge pumps ( LppB . LPPA . LPMB . LPMA ) in the form of the output voltage of the energy reserves ( C_LPPB . C_LPPA . C_LPMB . C_LPMA ) of the charge pumps ( LppB . LPPA . LPMB . LPMA ) and by varying the residence times in the states "PAn", "PAus" and "PZ". 26 equals to 25 with the exemplary difference that, by way of example, further illuminants ( LED2 ... n) are provided which emit light unpolluted for illumination purposes, one wavelength range, the blocked wavelength range (FIG. GWB ), through a filter ( F1 ) disappears. 27 26 equals to 26 in which a measuring device ( MV ), for example, a determination of the light transit time or other information from the reflected light pulses ( RLP ) allowed.
• 28 equals to 27 with the difference that now a compensation transmitter ( K ) which is complementary to the first LED ( LED1 ) is controlled, whereby by controlling the amplitude and the phase position of the control of the compensation diode ( K ) a temporally more or less uniform illumination of the photodiode ( MD ) is achieved.
• 29 equals to 15 with the exemplary difference that, by way of example, a first LED ( LED1a ) through an exemplary first H-bridge ( H ) and a second LED ( LED1b ) through an exemplary second H-bridge ( H' ), are provided, what the possibility of delivery of colored light pulses ( FLP ) opened.
• 30 equals to 15 with the exemplary difference that it is a proposed RGB floodlight ( SW ) and that by way of example a first LED ( LED1a ) through an exemplary first H-bridge ( H ) and a second LED ( LED1b ) through an exemplary second H-bridge ( H' ) and a third LED ( LED1c ) through an exemplary third H-bridge ( H" ), are provided, what the possibility of delivery of colored light pulses ( FLP ) and the simultaneous delivery of RGB color-determined light, for example also white light, for illumination purposes in the entire RGB color space opened.
• 31 equals to 25 with the exemplary difference that an exemplary, structurable filter, here in the form of a LCD Filters ( LCD ), in the beam path exemplarily within the optics ( CL . PL ) is inserted and projected.
• 32 equals to 25 with the exemplary difference that an exemplary micromirror array ( DLP ), here in the form of a LCD Filter is inserted into the beam path and the light beam cross-section spatially and / or temporally modulated.
• 33 equals to 25 with the exemplary difference that an exemplary structurable filter ( F1 ), here in the form of a LCD Filters ( LCD ), in the beam path as an example behind the optics ( operating room ) and is projected as a shadow mask.
• 34 shows exemplary positions of devices according to this proposal on an exemplary motor vehicle ( automotive ) in the form of an exemplary car.
• 35 shows an exemplary communication between a vehicle ( automotive ), with a proposed headlamp ( SW ), and a device of the traffic infrastructure, here by way of example a traffic light ( AMP ).
• 36 shows an exemplary communication between a first vehicle ( automotive ) and a second vehicle ( Kfz2 ), each with a proposed headlamp ( SW ), whereby these by means of these headlights ( SW ) a) the distances to each other a1 ) active and a2 ) passively determine and b) exchange data.
• 37 shows the H-bridge of 1 , wherein the first positive supply voltage ( VCC1 ) of the H-bridge of 1 and the second positive supply voltage ( VCC2 ) of the H-bridge of 1 here equal to the positive total supply voltage ( VCC ) and wherein the first negative supply voltage ( GND1 ) of the H-bridge of 1 and the second negative supply voltage ( GND2 ) of the H-bridge of 1 here equal to the negative total supply voltage ( GND ) are.
• 38 shows the actual H-bridge ( H ) with the first half-bridge ( HB1 ) from the series connection of the first transistor ( T1 ) and the series connection of the second transistor ( T2 ) as well as with the second half-bridge ( HB2 ) from the series connection of the third transistor ( T3 ) and the series connection of the fourth transistor ( T4 ).
• 39 equals to 27 with the difference that instead of a single sensor ( MD ) a two-dimensional arrangement of time-controllable photosensitive sensors ( TOFIMG ) for the detection of the light pulses ( LP ) or color light pulses ( FLP ) is used.

Description of the figures

FIG. 1

1 schematically shows a device according to the previously described proposal of an H-bridge. The drawing represents four transistors ( T1 . T2 . T3 . T4 ), each transistor having three terminals. The first transistor ( T1 ) has a first connection ( 1 ) and a second port ( 2 ) and a first control terminal ( G1 ). The second transistor ( T2 ) has a third port ( 3 ) and a fourth connection ( 4 ) and a second control connection ( G2 ). The third transistor ( T3 ) has a fifth port ( 5 ) and a sixth connection ( 6 ) as well as a third control connection ( G3 ). The fourth transistor ( T4 ) has a seventh port ( 7 ) and an eighth connection ( 8th ) and a fourth control terminal ( G4 ). Each control connection ( G1 . G2 . G3 . G4 ) is with the control ( ST ) connected. The control ( ST ) controls the logic states of the control connections ( G1 . G2 . G3 . G4 ). Each control connection ( G1 . G2 . G3 . G4 ) can be either in a first or in a second logical state. Due to the logical state of the control connection ( G1 . G2 . G3 . G4 ), the transistor takes ( T1 . T2 . T3 . T4 ) either a first or a second operating state. In this case, in a first "PAus" state, either the first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a first logical state and the second control port ( G2 ) and the third control terminal ( G3 ) in a second logic state and thus the first transistor ( T1 ) and fourth transistor ( T4 ) in a first operating state in which they conduct, and the second transistor ( T2 ) and third transistor ( T3 ) in a second operating state in which they lock, or the second control terminal ( G2 ) and the third control terminal ( G3 ) are in a first logical state and the first control port ( G1 ) and the fourth control terminal ( G4 ) in a second logic state and thus the second transistor ( T2 ) and third transistor ( T3 ) in a first operating state in which they conduct, and the first transistor ( T1 ) and fourth transistor ( T4 ) in a second operating state in which they lock. This is the "PAn" state as a whole. Also, all control connections ( G1 . G2 . G3 . G4 ) are in a second logic state, whereby all the transistors ( T1 . T2 . T3 . T4 ) are in a second operating state in which they lock. This is the "PZ" state as a whole. The LED ( LED1 ) has a cathode ( K ) and an anode ( A ) on. The cathode is connected to the second connector ( 2 ) of the first transistor ( T1 ) and with the third connection ( 3 ) of the second transistor ( T2 ) connected. The anode is connected to the sixth terminal ( 6 ) of the third transistor ( T3 ) and the seventh port ( 7 ) of the fourth transistor ( T4 ) connected. The LED ( LED1 ) lights up when the first control connection ( G1 ) and the fourth control terminal ( G4 ) in a first logical state and the third control port ( G3 ) are in a second logical state. Are the second control connection ( G2 ) and the third control terminal ( G3 ) in a first logical state and the first control port ( G1 ) and the fourth control terminal ( G4 ) in a second logic state, the blocking layer of the LED ( LED1 ) eliminated by the umpolung. The 1 also shows a first positive supply voltage ( VCC1 ) and a second positive supply voltage ( VCC2 ) and a first negative supply voltage ( GND1 ) and a second negative supply voltage ( GND2 ).

The first positive supply voltage ( VCC1 ) with the first connection ( 1 ) of the first transistor ( T1 ) connected.

The second positive supply voltage ( VCC2 ) with the fifth connection ( 2 ) of the third transistor ( T2 ) connected.

The first negative supply voltage ( GND1 ) with the fourth connection ( 4 ) of the second transistor ( T2 ) connected.

The second negative supply voltage ( GND2 ) with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected.

FIG. 2

2 schematically shows a device according to 3 but now with a positive and a negative charge pump.

The positive charge pump ( LppB ) for quick suction of the stored charge carriers is about their tenth connection ( 10 ) with the first connection ( 1 ) of the first transistor ( T1 ) connected. The positive charge pump ( LppB ) for quick suction of the stored charge carriers is also via their ninth port ( 9 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LppB ) for fast suction of the stored charge carriers. The negative charge pump ( LPMB ) for fast suction of the stored charge carriers is via their twelfth connection ( 12 ) with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected. The negative charge pump ( LPMB ) for quick suction of the stored charge carriers is also via their eleventh port ( 11 ) is connected to a reference potential, here in the drawing the negative total supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMB ). The barrier layer of the LED ( LED1 ) is cleared more quickly, by that the potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) for fast suction of the stored charge carriers above the potential of the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) and in that the voltage potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) is higher than the positive total supply voltage for fast suction of the stored charge carriers ( VCC ) and the voltage potential of the twelfth terminal ( 12 ) of the negative charge pump ( LPMB ) is lower than the negative total supply voltage for fast suction of the stored charge carriers ( GND ). All other subdevices and procedures are analogous 1 from.

FIG. 3

3 schematically shows a device according to 1 , but now with one pair each of a positive and a negative charge pump for sucking off the stored charge carriers and for generating a short switch-on edge.

The positive charge pump ( LppB ) for quick suction of the stored charge carriers is about their tenth connection ( 10 ) with the first connection ( 1 ) of the first transistor ( T1 ) connected. The positive charge pump ( LppB ) for quick suction of the stored charge carriers is also via their ninth port ( 9 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LppB ) for fast suction of the stored charge carriers.

The negative charge pump ( LPMB ) for fast suction of the stored charge carriers is via their twelfth connection ( 12 ) with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected. The negative charge pump ( LPMB ) for quick suction of the stored charge carriers is also via their eleventh port ( 11 ) is connected to a reference potential, here in the drawing the negative total supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMB ) for fast suction of the stored charge carriers.

The positive charge pump ( LPPA ) for generating a short turn-on edge is via its fourteenth terminal ( 14 ) with the fifth connection ( 5 ) third transistor ( T3 ) connected. The positive charge pump ( LPPA ) for generating a short switch-on edge is also via its thirteenth connector ( 13 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LPPA ) for generating a short turn-on edge.

The negative charge pump ( LPMA ) for generating a short switch-on edge is via its fifteenth terminal ( 15 ) with the fourth connection ( 4 ) of the second transistor ( T2 ) connected. The negative charge pump ( LPMA ) for generating a short switch-on edge is also via its sixteenth terminal ( 16 ) is connected to a reference potential, here in the drawing the negative total supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMA ) for generating a short turn-on edge.

The barrier layer of the LED ( LED1 ) becomes faster from remaining charge carriers when the LED ( LED1 ), in that the potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) for fast suction of the stored charge carriers above the potential of the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) for fast suction of the stored charge carriers and in that the voltage potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) is higher than the positive total supply voltage for fast suction of the stored charge carriers ( VCC ) and the voltage potential of the twelfth terminal ( 12 ) of the negative charge pump ( LPMB ) is lower than the negative supply voltage for fast suction of the stored charge carriers ( GND ).

The barrier layer of the LED ( LED1 ) becomes faster with charge carriers when the LED ( LED1 ), by exploiting the potential of the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge above the potential of the fifteenth terminal ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge and in that the voltage potential of the fourteenth connection ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge is higher than that of the positive supply voltage ( VCC ) and the voltage potential of the fifteenth terminal ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge is lower than that of the negative overall supply voltage ( GND ).

All other subdevices and procedures are analogous 1 from.

FIG. 4

4 schematically shows a device according to 1 , but now with a pair each of a positive and a negative charge pump for generating a short switch-on edge.

The positive charge pump ( LPPA ) for generating a short turn-on edge is via its fourteenth terminal ( 14 ) with the fifth connection ( 5 ) of the third transistor ( T3 ) connected. The positive charge pump ( LPPA ) for generating a short switch-on edge is also via its thirteenth connector ( 13 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LPPA ) for generating a short turn-on edge.

The negative charge pump ( LPMA ) for generating a short switch-on edge is via its fifteenth terminal ( 15 ) with the fourth connection ( 4 ) of the second transistor ( T2 ) connected. The negative charge pump ( LPMA ) for generating a short switch-on edge is also via its sixteenth terminal ( 16 ) is connected to a reference potential, here in the drawing the negative total supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMA ) for generating a short turn-on edge.

The barrier layer of the LED ( LED1 ) becomes faster with charge carriers when turning on the LED) LED1 ), by exploiting the potential of the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge above the potential of the fifteenth terminal ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge and in that the voltage potential of the fourteenth connection ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge is higher than that of the positive overall supply voltage ( VCC ) and the voltage potential of the fifteenth terminal ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge is lower than that of the negative overall supply voltage ( GND ).

All other subdevices and procedures are analogous 1 from.

FIG. 5

5 schematically shows a device according to 1 , but now with a positive charge pump to produce a short turn-on edge.

The positive charge pump ( LPPA ) for generating a short turn-on edge is via its fourteenth terminal ( 14 ) with the fifth connection ( 5 ) of the third transistor ( T3 ) connected. The positive charge pump ( LPPA ) for generating a short switch-on edge is also via its thirteenth connector ( 13 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LPPA ) for generating a short turn-on edge.

The barrier layer of the LED ( LED1 ) becomes faster with charge carriers when the LED ( LED1 ), by exploiting the potential of the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge above the potential of the negative supply voltage ( GND ) and in that the voltage potential of the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) for generating a short switch-on edge is higher than that of the positive overall supply voltage ( VCC ).

All other subdevices and procedures are analogous 1 from.

FIG. 6

6 schematically shows a device according to 1 , but now with a negative charge pump to produce a short turn-on edge.

The negative charge pump ( LPMA ) for generating a short switch-on edge is via its fifteenth terminal ( 15 ) with the fourth connection ( 4 ) of the second transistor ( T2 ) connected. The negative charge pump ( LPMA ) for generating a short switch-on edge is also via its sixteenth terminal ( 16 ) connected to a reference potential, here in the drawing, the negative supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMA ) for generating a short turn-on edge.

The barrier layer of the LED ( LED1 ) becomes faster with charge carriers when the LED ( LED1 ), in that the potential of the positive total supply voltage ( VCC ) above the potential of the fifteenth port ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge and in that the voltage potential of the fifteenth connector ( 15 ) of the negative charge pump ( LPMA ) for generating a short switch-on edge is lower than that of the negative overall supply voltage ( GND ).

All other subdevices and procedures are analogous 1 from.

FIG. 7

7 schematically shows a device according to 1 , but now with a negative charge pump to suck the stored charge carriers.

The negative charge pump ( LPMB ) for fast suction of the stored charge carriers is via their twelfth connection ( 12 ) with the eighth connection ( 8th ) of the fourth transistor ( T4 ) connected. The negative charge pump ( LPMB ) for quick suction of the stored charge carriers is also via their eleventh port ( 11 ) connected to a reference potential, here in the drawing, the negative supply voltage ( GND ) as the reference potential of the negative charge pump ( LPMB ) for fast suction of the stored charge carriers.

The barrier layer of the LED ( LED1 ) is cleared more quickly of remaining charge carriers when the LED is turned off, by that the potential of the positive total supply voltage ( VCC ) above the potential of the twelfth terminal ( 12 ) of the negative charge pump ( LPMB ) for quick suction of the stored charge carriers and the voltage potential of the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) is lower than the negative total supply voltage for fast suction of the stored charge carriers ( GND ).

All other subdevices and procedures are analogous 1 from.

FIG. 8

8th schematically shows a device according to 1 , but now with a positive charge pump for exhausting the stored charge carriers.

The positive charge pump ( LppB ) for quick suction of the stored charge carriers is about their tenth connection ( 10 ) with the first connection ( 1 ) of the first transistor ( T1 ) connected. The positive charge pump ( LppB ) for quick suction of the stored charge carriers is also via their ninth port ( 9 ) is connected to a reference potential, here in the drawing the positive total supply voltage ( VCC ) as the reference potential of the positive charge pump ( LppB ) for fast suction of the stored charge carriers.

The barrier layer of the LED ( LED1 ) becomes faster from remaining charge carriers when the LED ( LED1 ), in that the potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) for fast suction of the stored charge carriers above the negative supply voltage ( GND ) and in that the voltage potential of the tenth terminal ( 10 ) of the positive charge pump ( LppB ) is higher than the positive total supply voltage for fast suction of the stored charge carriers ( VCC ).

All other subdevices and procedures are analogous 1 from.

FIG. 9

9 shows schematically how a transition from one operating state to the next operating state is possible. The figure shows that preferably only one change from the "PAus" state of the H-bridge ( H ) (= LED is electrically biased in the reverse direction) into the "PZ" state (= there is no defined voltage across the LED) of the H-bridge ( H ) or a change from the "PAn" state (= LED is electrically biased in the flow direction) of the H-bridge ( H ) into the "PZ" state (= there is no defined voltage at the LED) of the H-bridge ( H ) and vice versa is possible.

In this case, the "PZ" state describes the first overall state of the device, whereby in the first overall state all control connections ( G1 . G2 . G3 . G4 ) are in a second logical state. This means that all transistors ( T1 . T2 . T3 . T4 ) are in their second operating state (locked). The LED ( LED1 ) emits no light.

The "PAn" state describes the second overall state of the device, wherein in the second overall state the second control connection ( G2 ) and the third control terminal ( G3 ) are in a first logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) are in the first operating state (conductive). The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a second logic state and thus the first transistor ( T1 ) and the fourth transistor ( T4 ) in the second operating state (disabled). The LED ( LED1 ) emits light and is electrically biased flow direction.

The "PAus" state describes the third overall state of the device, wherein in a third overall state the second control connection ( G2 ) and the third control terminal ( G3 ) are in a second logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) are in the second operating state (disabled). The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a first logic state and thus the first transistor ( T1 ) and the fourth transistor ( T4 ) in a first operating state (conductive). The LED ( LED1 ) emits no light and is electrically biased in the reverse direction.

The 9 shows as a state diagram the at least permissible overall states "PAn", "PZ" and "PAus" of the H-bridge ( H ). To make a short circuit with an uncontrollable cross-current in the branches (T1, T2 / T3, T4) of the H-bridge ( H ), a change from the first overall state of the H-bridge ( H ), the "PAus" state, the third overall state of the H-bridge (H), the "PZ" state or vice versa, and / or a change from the second overall state of the H-bridge ( H ), the "PAn" state, the third overall state of the H-bridge (H), the "PZ" state, or vice versa.

In this way, it is certainly avoided that the feared cross-current through the first transistor ( T1 ) of the H-bridge (H) and the second transistor ( T2 ) of the H-bridge (H), which is the negative charge pump ( LPMA ) for generating a fast switch-on edge with the positive charge pump ( LppB ) short-circuits for quick suction of the stored charge carriers and thus consumes their energy reserves.

Likewise, this reliably avoids that the feared cross-current through the third transistor ( T3 ) of the H-bridge (H) and the fourth transistor ( T4 ) of the H-bridge (H), which is the negative charge pump ( LPMB ) for fast suction of the stored charge carriers with the positive charge pump ( LPPA ) short-circuits to generate a fast turn-on edge and thus consumes their energy reserves.

In the following, however, this idea will be relativized again.

For the purposes of this disclosure, the "PAn" state for a very short on-time ( τ _pp ). For fast switching, an increased forward voltage ( U _DR ) in the flow direction to the first light-emitting diode ( LED1 ). In the "PAus" state, a very short removal time ( τ _pn ) an amount of increased clearance ( U _RM ) in the reverse direction of the first light-emitting diode ( LED1 ) at this first light emitting diode ( LED1 ). The "PAus" state is thus only for this short clearing time ( τ _pn ) and then left again. This clearing-out time ( τ _pn ) is preferably dimensioned so that a residual charge of the storage charge after the end of the clearing time ( τ _pn ) still in the first light-emitting diode ( LED1 ), which protects them from destruction by avalanche effects.

FIG. 10

10 shows the simulation of a comparison between 3 drive circuits (listing from longest to shortest pulse): current driver (20mA) (reference numeral c ), Voltage drivers ( 3.3V) (Reference b ), H-bridge (40V) (reference number a ). As can be clearly seen, the proposed method is much better suited for producing short pulses than the other prior art methods.

FIG. 11

shows the current profile in the proposed Pulsationsverfahren and the course of the voltage at the first light emitting diode ( LED1 ). For a very short switch-on time ( τ _pp ), a forward voltage ( U _DR ) to the first light-emitting diode ( LED1 ) in the forward direction. This increases the electrical current through the first light-emitting diode ( LED1 ) very fast steeply. Their barrier layer is flooded with charge carriers, preferably still no quasi-static equilibrium is established. Rather, after this switch-on time ( τ _pp ) the polarity of the voltage at the first light emitting diode ( LED1 ) preferably reversed. For a clearing-out period ( τ _pn ) is then a Ausräumspannung ( U _RM ) at the first light emitting diode ( LED1 ) in the reverse direction. This clearing-out time ( τ _pn ) is dimensioned such that a residual charge in the first light-emitting diode ( LED1 ) remains. This is the case when this clearing-out time ( τ _pn ) is shorter than the storage time ( τ _SP1 ) of the charge carriers in the first light-emitting diode ( LED1 ) when operating this typically a relation to the supply voltage increased voltage as a forward voltage ( U _DR ) in pulse mode in the flow direction of the first light-emitting diode ( LED1 ) and with simultaneous use of a relative to the amount of the supply voltage in terms of amount increased Ausräumspannung ( U _RM ) in the reverse direction of the first light-emitting diode ( LED1 ). The storage time ( τ _SP0 ) of the charge carriers in the first light-emitting diode ( LED1 ) when operating with normal, ie not increased supply voltage ( U _DR ), and use of the supply voltage as a removal voltage ( U _RM ) in the reverse direction of the first light-emitting diode ( LED1 ) is also shown. (see also 10 , Case b )

FIG. 12

12 equals to 3 with the difference that in addition an H-bridge control instrument ( HCV ) for measuring the voltage drop across the load in the first H-bridge (H), so typically the lighting voltage ( VLED1 ) via the first light-emitting diode ( LED1 ) is provided in order to ensure the functionality of the drive through the first H-bridge (H) and the first LED ( LED1 ) of the H-bridge (H) during operation and if necessary, as explained below, to be able to optimize individual control parameters of the bridge. The acquisition of the illuminant voltage ( VLED1 ) via the first light-emitting diode ( LED1 ) is particularly necessary because it is especially in motor vehicle headlamps safety-related sub-devices of these motor vehicles. At the first light emitting diode ( LED1 ) can also be an interconnection of several light-emitting diodes (LEDs). In particular, it may be a Act on the LED chain. If one of these LEDs now fails, its failure should be able to be measured and signaled. For example, H-bridge control instrument compares ( HCV ) the voltage drop ( VLED1 ) via the first light-emitting diode ( LED1 ), of which we now assume that it is, for example, a chain of several LEDs, with a reference value that matches the current state of the H-bridge (H). Is the voltage drop ( VLED1 ), for example above a first threshold value and below a second threshold value, which is different from the first threshold value and is preferably greater than this first threshold value, then it can be concluded that the collocation of the plurality of LEDs is within the permitted tolerance range which is marked by these threshold values , is located and therefore ok. In the other two cases, the H-bridge control instrument ( HCV ) detects an error and passes it on. For this purpose, the H-bridge control instrument ( HCV ), for example, this measured value of the lighting voltage ( VLED1 ) to a computer system ( .mu.C ), which may be part of the H-bridge (H), but may also be in a superordinate context, as shown in this disclosure. This signaling of the illuminant voltage ( VLED1 ) to a computer system ( .mu.C ) can also be in the form of signaling the time course of the lighting voltage ( VLED1 ) respectively. It is therefore proposed that the time profile of the lighting voltage ( VLED1 ) is detected during the transmission of the light pulse at least with one sample. Thus, then the computer system ( .mu.C ) as a function of the determined time profile of the lighting means voltage ( VLED1 ) or a value of the illuminant voltage ( VLED1 ) at a time the parameters controlling the first LED ( LED1 ) in particular by adjusting the charge pump voltage of the charge pumps ( LppB . LPPA . LPMB . LPMA ) eg in the form of prestressing the energy reserves ( C_LPPB . C_LPPA . C_LPMB . C_LPMA ) of the charge pumps ( LppB . LPPA . LPMB . LPMA ) or the voltage converter ( SVPB . SVPA . SVMB . SVMA ) and by varying the residence times in the states "PAN", "PAUS" and "ZV". This will be explained in detail below. If the first LED ( LED1 ) should also be used as a means of illumination, the computer system ( .mu.C ) also the supply voltage of the first LED ( LED1 ) and the duty cycle of the PWM with which the control unit ( ST ) via the switching elements ( T1 . T2 . T3 . T4 ) of the H-bridge (H) the first light-emitting diode ( LED1 ) controls. Is the first LED ( LED1 ) to an interconnection of multiple LEDs, so the measurement of the light source voltage of individual LEDs of this plurality of LEDs may be useful, so then the analysis and monitoring can detect errors on individual LEDs of this plurality of LEDs. In this respect, the scheme of the 12 just an example.

FIG. 13

13 equals to 12 with the difference that a first H-bridge control instrument ( HCI1 ) for measuring the current through the first switching element of the H-bridge, that is typically by the first transistor ( T1 ), here by detecting the voltage drop across the first transistor ( T1 ) and a second H-bridge control instrument ( HCI2 ) for measuring the current through the second switching element of the H-bridge, that is typically through the second transistor ( T2 ), here by detecting the voltage drop across the second transistor ( T2 ) and a third H-bridge control instrument ( HCI3 ) for measuring the current through the third switching element of the H-bridge, that is typically by the third transistor ( T3 ), here by detecting the voltage drop across the third transistor ( T3 ) and a fourth H-bridge control instrument ( HCI4 ) for measuring the current through the fourth switching element of the H-bridge, that is typically by the fourth transistor ( T4 ), here by detecting the voltage drop across the fourth transistor ( T4 ) and, in order to ensure the functionality of the drive through the first H-bridge (H) and the first LED ( LED1 ) of the H-bridge (H) during operation, in particular, by being able to check the flowing current. If a switching element of the switching elements ( T1 . T2 . T3 . T4 ) of the H-bridge (H), the voltage drop across this switching element no longer corresponds to the associated expected value. The H Bridge in particular in conjunction with an H-bridge control instrument ( HCV ) able to deliver the energy to the first LED ( LED1 ) and adjust the control before exceeding critical thresholds. In particular, both the temporal current profile and the temporal voltage curve can thus be precisely regulated and optimized. It is thus very advantageous if both the positive charge pumps ( LppB . LPPA ) as well as the negative charge pumps ( LPMA . LPMB ) or the negative voltage transformers ( SVMA . SVMB ) are adjustable in their output voltage. This control is preferably done by the controller ( ST ) or the computer system ( .mu.C ). In addition, it makes sense then, the transistors ( T1 . T2 . T3 . T4 ) not only as a switch, but possibly also as a current source transistors and through this the current through the first LED ( LED1 ). This makes it possible, a temporal power transmission curve for the first LED ( LED1 ), which dictates when and how much energy into the first LED ( LED1 ) or from the first LED ( LED1 ) is taken. In the context of the drafting of the proposal, it was recognized that it may well be reasonable to have some cross-flow in the half-bridges ( HB1 . HB2 ) of the H-bridge (H) when changing from an additional cross-flow state "PQZ" to the "PAus" - State because it allows the charge carriers not only in the first LED ( LED1 ) can be eliminated faster, but also from the turn-off transistors ( T2 . T3 ) are removed faster.

It was recognized that it is useful and preferable for the transition from the state "PAus" to the state "PAn" to actually go through the state "PZ", whereby at the end of the time in the "PZ" state all transistors of both Half bridge ( HB1 : T1 . T2 ; HB2 : T3 . T4 This actually differentiates the "PZ" state from the "QPZ" state described later. Since the charge carriers in the previously in the state "PAus" switched transistors (in the example, the first transistor T1 and the fourth transistor T4 ) are then degraded only very slowly, this condition must have a minimum residence time ( T _Pmin ) are maintained. Only then can the change from the "PZ" state to the "PAn" state take place. (See also 9 )

However, the situation is different for the reverse case of the transition from the "PAn" state to the "PAus" state. Here is the first LED ( LED1 ) and the turn-off transistors (in the example, the second transistor T2 and the third transistor T3 ) are cleared as quickly as possible of charge carriers. Since the turn-off transistors (in the example, the second transistor T2 and the third transistor T3 ) need some time to turn off, it makes sense, each a cross-flow through the turn-on transistors (in the example, the first transistor T1 and the fourth transistor T4 ) at the beginning of the "PAn" state. This achieves two effects:

First, the turn-off transistors (in the example, the second transistor T2 and the third transistor T3 ) faster through the turn-on transistors (in the example, the first transistor T1 and the fourth transistor T4 ) unload. The turn-on transistors thereby also take up a large part of the respective currents, which are the switching-off transistors (in the example, the second transistor T2 and the third transistor T3 ) otherwise still in the first LED ( LED1 ).

Second, this leads to a faster reversal and thus discharge of the first LED ( LED1 ). It therefore makes sense if the permissible transverse currents in the respective half-bridges ( HB1 . HB2 ) during turn-off of the turn-off transistors (in the example, the second transistor T2 and the third transistor T3 ) is maximized at the transition from the "PAn" state to the "PAus" state to thermal acceptability. This means that the transition from the "PAn" state to the "PAus" state preferably takes place via a "PQZ" state in which a cross current which is greater than the cross current in the "PZ" state is permitted in the short term. In order to be able to achieve the mentioned crossflow maximization in the "PQZ" state, it is particularly advantageous to calculate the essential parameters of the energy loss in the transistors ( T1 . T2 . T3 . T4 ). As a rule, the behavior of the transistors ( T1 . T2 . T3 . T4 ), in particular whose on-resistance is known, it makes sense on the basis of the voltage drops across the transistors ( T1 . T2 . t3 . T4 ) to calculate the respective energy output. From the voltage drop across the first LED ( LED1 ), the axial current of the H-bridge through the first LED (usually LED1 ) to be appreciated. It may be useful in this context, two shunt resistors ( Rs1 . Rs2 ) eg in the ground lines of the H-bridge ( H ) (please refer 23 ) to measure the current accurately and not just from the voltage drop across the transistors ( T1 . T2 . T3 . T4 ) appreciate. Since the function of the transistors ( T1 . T2 . T3 . T4 ) is different, the first transistor ( T1 ) of the H-bridge ( H ) typically not equal to the third transistor ( T3 ) of the H-bridge ( H ) and the second transistor ( T2 ) of the H-bridge ( H ) typically not equal to the fourth transistor ( T4 ) of the H-bridge (H). The exact dimensioning will be determined by the expert by calculation and simulation taking into account the first LED used ( LED1 ) and the layout used for the typically used printed circuit. The control of the cross-currents in the two states "PZ" and "PQZ" is preferably carried out by regulating the voltage of the charge pumps ( LPPA . LppB . LPMA . LPMB ) or the voltage converter ( SVPA . SVPB . SVMA . SVMB ) and the regulation of the turn-on and turn-off of the transistors ( T1 . T2 . T3 . T4 ). As actual variables of such a regulation, the voltage across the first LED ( LED1 ), the voltage drops across the transistors ( T1 . T2 . T3 . T4 ) and optionally additionally measured values for the current through the respective half-bridges ( HB1 : T1 . T2 ; HB2 : T3 . T4 ) be used.

From the prior art (eg US 4,571,506 A , Column 2 row 59 to 65 ) it is known that higher blocking voltages on an LED lead to a shortening of the storage time ( τ _SP0 ) to lead. It is also known from the prior art that the maximum allowable reverse voltage (English: Peak reverse voltage) are limited by the breakdown characteristics of the light emitting diode. According to the invention, it has now been recognized that the n- and p-type charge carriers still located in the barrier layer, the formation of high field strengths within the PN junction of the first light-emitting diode ( LED1 ) at the beginning of the clearing process, as long as such movable space charge clouds are still in the barrier layer. It happens then a limited by the dynamic space charge current. Furthermore, it has been recognized that the light output has already decreased before all charges have been removed from the barrier since the centers of positive charge of the holes and the negative charge of the electrons converge. Therefore, it is usually sufficient to remove a substantial part of the space charge, but not the entire space charge. It therefore makes sense for a very short switch-on time ( τ _pp ) a large forward voltage ( U _DR ) to the first LED ( LED1 ) in the forward direction, so that it is flooded quickly with charge carriers and then a very large blocking voltage for a very short clearing time ( τ _pn ) shorter than the resulting storage time (τ _sp1 ) that would result from this reverse voltage. The clearing-out time ( τ _pn ) is preferably less than 95% of the storage time ( τ _sp1 ), better less than 95% of the storage time ( τ _sp1 )), preferably less than 90% of the storage time ( τ _sp1 ), better less than 85% of the storage time ( τ _sp1 ), better less than 80% of the storage time ( τ _sp1 ), better less than 75% of the storage time ( τ _sp1 ). It is recommended that the effect on the barrier layer and the lifetime of the LEDs be qualified exactly and that the clearing time ( τ _pn ) to adapt according to the results.

The in the first LED ( LED1 ) residual charge protects the first LED ( LED1 ) before an avalanche breakdown, since the charge cloud of the residual charge prevents the occurrence of a large field strength within the LED. On the cathode side, the precipitation of a cathode drop by the electrons is prevented by the premature switching off of the switch-off voltage, and on the anode side, the occurrence of an anode fall through the holes is prevented, since these charge carriers are still in the drift path at this switch-off time.

Unlike in the US 4,571,506 A that only has a small blocking voltage of 0.2Vdc (column 2 , Row 27 to 32 of the US 4,571,506 A ) provides for the LED to be switched off, a very significant blocking voltage, which is preferably in the range of the forward voltage, is applied to the first LED ( LED1 ). In the technical teaching of US 4,571,506 A It was not recognized that a sufficient residual charge after the accelerated shutdown of the LED is critical for the life of the LED to be energized, since only it prevents the occurrence of high field strengths. Another issue is the prevention of thermal breakdown of the LED. It was recognized that the heat input into the LED must be limited. Therefore, the higher the selected applied voltage, the lower the pulse repetition frequency required to produce such high power pulses. Since the pulse power increases quadratically with the voltage, the pulse interval must be increased and / or the pulse duration must be reduced in order to limit the mean registered power. Once the remaining charge has been dissipated, a strong electric field is formed inside the LED, which can lead to the destruction of the LED due to avalanche effects. This operating condition must therefore be avoided at all costs.

The switch-on time ( τ _pp ) and the clearing-out time ( τ _pn ) can be controlled, for example, by suitable timers, such as delay elements, etc. Are the storage times ( τ _SP0 . τ _SP1 ) of the first LED ( LED1 ) in dependence on the amounts of the applied voltages, these times can be set constructively. Preferably, a temperature dependence is taken into account. For example, programmable delay elements for the operating state-dependent setting of these times can be used together with a suitable start signal, which is then adapted by these delay elements.

Furthermore, it may be useful to use the transistors ( T1 . T2 / T3 . T4 ) with one or more thermocouples that monitor the transistors during operation. Their parameters can also be used for the control.

It is therefore particularly advantageous if at least one of the transistors ( T1 . T2 / T3 . T4 ) to thermally couple with a temperature sensor, in particular a PN diode or a bipolar transistor as a temperature sensor. Is it the case of the transistors ( T1 . T2 / T3 . T4 ) of the H-bridge (H) to MOS transistors, it is particularly useful if the at least one temperature sensor is located in the center of a symmetry point of such a transistor. For example, it makes sense to square out such a MOS transistor and to place a small PN diode or a bipolar transistor in the geometric center of the transistor. The diode voltage or the diode voltage of the base-emitter diode is temperature-dependent and can be measured. Therefore, it is responsible for the regulation of the current through the half-bridges ( HB1 . HB2 ) of the H-bridge can be used as actual value encoder. In order to regulate the current, at least one transistor (eg T2 ) used as a current source transistor.

FIG. 14

14 shows how 9 schematically how a transition from one operating state to the next operating state is possible. Now, however, it is assumed that at the transition from the "PAn" state, in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are blocking and the second transistor ( T3 ) and the third transistor ( T3 ) are in the "PAus" state, in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are conductive and the second transistor ( T3 ) and the third transistor ( T3 ) are off, a different cross-current than when transitioning from the "PAus" state to the "PAn" state is desired. (See also description of 13 .)

For the first, only a change from the "PAus" state of the H-bridge (H) is preferred (= LED is electrically biased in the reverse direction), in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are conductive and the second transistor ( T3 ) and the third transistor ( T3 ) are in the "PZ" state (= at the LED no defined voltage is applied and preferably the transistors are all blocked.), In which preferably the first transistor ( T1 ) and the fourth transistor ( T4 ) are conductive and the second transistor ( T3 ) and the third transistor ( T3 ) are possible. The reverse transition is no longer desirable.

Secondly, preference is given to only a change from the "PZ" state of the H-bridge (H), in which preferably the first transistor (FIG. T1 ) and the fourth transistor ( T4 ) are blocking and preferably the second transistor ( T3 ) and the third transistor ( T3 ) are in the "PAn" state (= LED is electrically biased in the flow direction), in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are blocking and the second transistor ( T3 ) and the third transistor ( T3 ) are conductive. The reverse transition is no longer desirable.

Thirdly, preference is only given to a change from the "PAn" state of the H-bridge ( H ), in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are blocking and the second transistor ( T3 ) and the third transistor ( T3 ) in the additional "PQZ" state (= a certain cross-flow in the H-bridge ( H ) is permitted), in which preferably the first transistor ( T1 ) and the fourth transistor ( T4 ) and preferably the second transistor ( T3 ) and the third transistor ( T3 ) are possible. The reverse transition is no longer desirable.

Fourth, only one change from the additional "PQZ" state of the H-bridge ( H ), in which preferably the first transistor ( T1 ) and the fourth transistor ( T4 ) are blocking and the second transistor ( T3 ) and the third transistor ( T3 ) are in the "PAus" state of the H-bridge (H), where the first transistor ( T1 ) and the fourth transistor ( T4 ) are conductive and the second transistor ( T3 ) and the third transistor ( T3 ) are possible. The reverse transition is no longer desirable.

In this case, the "PZ" state as before describes the first overall state of the device), in which the first transistor ( T1 ) and the fourth transistor ( T4 ) are blocking and the second transistor ( T3 ) and the third transistor ( T3 ) are blocking. In the first overall state, the "PZ" state, all control connections ( G1 . G2 . G3 . G4 ) preferably in a second logical state. This means that all transistors ( T1 . T2 . T3 . T4 ) are preferably in their second operating state (locked). The LED ( LED1 ) emits no light.

The "PAn" state describes the second overall state of the device, wherein in the second overall state the second control connection ( G2 ) and the third control terminal ( G3 ) are in a first logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) are in the first operating state (conductive). The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a second logic state and thus the first transistor ( T1 ) and the fourth transistor ( T4 ) in the second operating state (disabled). The LED ( LED1 ) emits light and is electrically biased flow direction.

The "PAus" state describes the third overall state of the device, wherein in the third overall state the second control connection ( G2 ) and the third control terminal ( G3 ) are in a second logic state and thus the second transistor ( T2 ) and the third transistor ( T3 ) are in the second operating state (disabled). The first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a first logic state and thus the first transistor ( T1 ) and the fourth transistor ( T4 ) in a first operating state (conductive). The LED ( LED1 ) emits no light and is electrically biased in the reverse direction.

The "PQZ" state describes the fourth overall state of the device, wherein in the fourth overall state the control of the control connections ( G1 . G2 . G3 . G4 ) is performed so that the second transistor ( T2 ) and the third transistor ( T3 ) from the first operating state (conductive) as soon as possible into the second operating state (blocked) and the first control connection ( G1 ) and the fourth control terminal ( G4 ) are in a first logic state and thus the first transistor ( T1 ) and the fourth transistor ( T4 ) in a first operating state (conductive). A cross-flow typically occurs because the second transistor ( T2 ) and the fourth transistor ( T4 ) at the exit from the "PQZ" state into the "PAus" state due to the typically short residence time in the "PQZ" state is typically not yet completely switched off and thus the first transistor ( T1 ) already supplies electrical current, which is then through the second transistor ( T2 ) is recorded directly. Therefore, it is of particular importance that on the one hand the time ( .delta.t ), in which the H-bridge (H) is in this "PQZ" state, is precisely controlled, preferably regulated, and, secondly, the crossflow occurring in the half bridges (FIG. HB1 : T1 . T2 ; HB2 : T3 . T4 ) of the H-bridge (H) in the subsequent "PAus" state preferably also exactly controlled, and is preferably regulated over the time course of the cross-current by means of a current source circuit. If cross-currents are to be used actively, then it is conceivable to assume one of the cross-flow-related states of table 1 for a defined period of defined time length within the "PQZ" state as an additional temporary state. In such a provoked cross-flow state, however, this cross-flow should then be preferred by current source transistors ( T2 . T4 ) are limited and very particularly preferably controlled or regulated. The LED ( LED1 ) turns off in this "PQZ" state. The H Bridge (H) changes the on the first LED ( LED1 ) applied voltage from flow direction to reverse direction in this "PQZ" state. The second overall state, the "PAn" state is no longer than a switch-on time in the light pulse mode ( τ _pp ), which is preferably smaller than the charge carrier lifetime ( τ ) Is, since the control is carried out according to the here-proposed technical teaching with an increased operating voltage in this light pulse mode in the flow direction of the LEDs. The third overall state, the "PAus" state, is analogously also no longer than a clearing-out time ( τ _pn ), the clearing time ( τ _pn ) smaller than the carrier lifetime ( τ ) Is, since the control is carried out according to the here-proposed technical teaching with an increased operating voltage in this light pulse operation in the reverse direction of the LEDs. It is of particular importance that the space charge zone of the light emitting diodes may not be emptied. The switch-on time ( τ _pp ) must be smaller than the charge carrier lifetime ( τ ) be.

The 14 shows as state diagram the at least permissible overall states "PQZ", " PAn "," PZ " and " Pout "The H-bridge ( H ). Further states are conceivable (see Table 1). The cross-flow conditions are typically blocked as listed in the table. To clear out the charge carriers, etc., a preferably very brief intake of these states marked "blocked" is conceivable, for example if transistors (eg T2 . T4 ) of the H-bridge can be operated as Stromquellentransistoren or otherwise as the converted power is sensibly limited. Table 1: States of the proposed H-bridge (H) in the simplest embodiment. Status first half bridge second half bridge Income duration in the light pulse mode LED1 conditions T1 T2 T3 T4 1 out out out out any does not light up "PZ" state 2 at out out out any does not light up tnv. 3 out at out out any does not light up tnv. 4 at at out out Crossflow in the first half bridge (HB1) blocked 5 out out at out does not light up tnv. 6 at out at out Clearing time (τ _pn ) not lit, charges are cleared out of LED "PAus" state 7 out at at out Switch-on time (τ _pp ) shines "PAn" state 8th at at at out Crossflow in the first half bridge (HB1) blocked 9 out out out at any does not light up tnv. 10 at out out at any not lit, LED1 is short-circuited via positive supply voltage "K" state (1st variant) 11 out at out at any not lit, LED1 is short-circuited via negative supply voltage "K" state (2nd variant) 12 at at out at Crossflow in the first half bridge (HB1) blocked 13 out out at at Crossflow in the second half bridge (HB2) blocked 14 at out at at Crossflow in the second half bridge (HB2) blocked 15 out at at at Crossflow in the second half bridge (HB2) blocked 16 at at at at Cross-flow in the first half-bridge (HB1) and in the second half-bridge (HB2) blocked tnv. = typically not used but allowed.

Only by the exact control of the cross current in the "PQZ" state can it be avoided that there is an uncontrolled cross current across the first transistor ( T1 ) of the H-bridge ( H ) and the second transistor ( T2 ) of the H-bridge ( H ), which is the negative charge pump ( LPMA ) for generating a fast switch-on edge with the positive charge pump ( LppB ) short-circuits for quick suction of the stored charge carriers and thus consumes their energy reserve uncontrolled or the H-bridge ( H ) or in the case of a voltage transformer ( SVPB ) in place of the charge pump ( LppB ) the voltage converter ( SVPB ) damaged.

By precisely this exact control of the cross-flow in the "PQZ" state can also be avoided that there is an uncontrolled cross-flow through the third transistor ( T3 ) of the H-bridge (H) and the fourth transistor ( T4 ) of the H-bridge ( H ), which is the negative charge pump ( LPMB ) for fast suction of the stored charge carriers with the positive charge pump ( LPPA ) short-circuits to produce a fast turn-on edge and thus consumes its energy reserve uncontrolled or the H-bridge ( H ) or in the case of a voltage transformer ( SVMB ) in place of the charge pump ( LPMB ) the voltage converter ( SVMB ) damaged..

It is obvious that when using a "PQZ" state, the energy reserves ( C_LPPA . C_LPPB . C_LPMA . C_LPMB ) of the charge pumps ( LPPA . LppB . LPMA . LPMB ) must be chosen to be larger in capacity to compensate for the energy losses due to the occurring cross-flow.

In case of using voltage transformers ( SVPA . SVPB . SVMA . SVMB ) instead of charge pumps ( LPPA . LppB . LPMA . LPMB ) whose internal resistances must be suitably selected.

The second overall state, the "PAn" state, in this case no longer than a switch-on time ( τ _pp ), which is preferably smaller than the charge carrier lifetime ( τ ) Is, since the control is carried out according to the here-proposed technical teaching with an increased operating voltage in this light pulse mode in the flow direction of the LEDs. The third overall state, the "PAus" state, is analogously also no longer than a clearing-out time ( τ _pn ), the clearing time ( τ _pn ) smaller than the carrier lifetime ( τ ) Is, since the control according to the here-proposed technical teaching with an increased operating voltage in this light pulse operation in the reverse direction of the Light-emitting diodes take place. It is of particular importance that the space charge zone of the light emitting diodes may not be emptied. The switch-on time ( τ _pp ) must be smaller than the charge carrier lifetime ( τ ) be.

FIG. 15

15 shows an exemplary, proposed headlight system ( SW ) schematically simplified and functionally symbolic, wherein the lighting means, the first LED ( LED1 ) both pulsed in a pulsed operating state (GPB) and as a lighting means for quasi-continuous lighting in a quasi-steady-state condition ( QDB ) can be used.

The H Bridge (H) is by means of the second terminal ( 2 ) of the first transistor ( T1 ) of the first half-bridge ( HB1 ) of the H-bridge (H) with the anode ( A ) of the first LED ( LED1 ) connected. The H Bridge (H) is by means of the third terminal ( 3 ) of the second transistor ( T2 ) of the first half-bridge ( HB1 ) of the H-bridge (H) with the anode ( A ) of the first LED ( LED1 ) connected. The H Bridge (H) is by means of the sixth terminal ( 6 ) of the third transistor ( T3 ) of the second half-bridge ( HB2 ) of the H-bridge (H) with the cathode ( K ) of the first LED ( LED1 ) connected. The H Bridge (H) is by means of the seventh port ( 7 ) of the fourth transistor ( T4 ) of the second half-bridge ( HB2 ) of the H-bridge (H) with the cathode ( K ) of the first LED ( LED1 ) connected.

The H-bridge ( H ) is in this example with a positive total supply voltage ( VCC ) and is the total negative supply voltage ( GND ) connected. The supply voltage lines of the other blocks are for simplicity as in this disclosure generally the case not shown.

A control device ( ST ) generates the control signal for the first control connection ( G1 ) of the first transistor ( T1 ) of the H-bridge ( H ). The control device ( ST ) generates the control signal for the second control connection ( G2 ) of the second transistor ( T2 ) of the H-bridge ( H ). The control device ( ST ) generates the control signal for the third control connection ( G3 ) of the third transistor ( T3 ) of the H-bridge (H). The control device ( ST ) generates the control signal for the fourth control connection ( G4 ) of the fourth transistor ( T4 ) of the H-bridge (H).

Unless the charge pumps (not shown) LPPA . LppB . LPMA . LPMB ) or voltage transformers ( SVPA . SVPB . SVMA . SVMB ) of the H-bridge ( H ) a clock ( clk3 ) for their operation, this is preferably from a common time base ( TB ) as the base time signal ( clk3 ) of the H-bridge ( H ) provided. The time base ( TB ) generates the base time signals ( clk1 . clk2 . clk3 ) of the device. This is preferably the base time signal ( clk1 ) (typically = base clock) of a computer system ( .mu.C ), which preferably controls the entire device, and the basic time signal ( clk2 ) (typically = base clock) of the control device ( ST ), for direct control of the H-bridge ( H ), and said base time signal ( clk3 ) (typically = base clock) of the H-bridge (H). These basic time signals may depend on each other or be the same. The control device ( ST ) is preferably a mixed analog / digital circuit. If a state diagram accordingly 9 is used, the control device can also be a purely digital finite-state machine, the purely digital control signals ( G1 . G2 . G3 . G4 ) for the transistors ( T1 . T2 . T3 . T4 ) of the H-bridge. However, if in each half-bridge ( HB1 : T1 . T2 ; HB2 : T3 . T4 ) of the H-bridge (H) of one of the transistors (eg T2 . T4 ) each half-bridge ( HB1 . HB2 ) is to be used not only as a switching element, but also as a current source transistor, the control device ( ST ), the gate-source voltage of these relevant, used as a current source transistors (eg T2 . T4 ) of the respective half bridge ( HB1 . HB2 ) of the H-bridge ( H ) and readjust as compared to a voltage reference, eg the voltage across a reference current flowing MOS transistor diode, provided that they are in a state in which they are not locked.

Also, the controller ( ST ) typically the correct timing when passing through the state diagrams z. B. the 9 . 14 and 22 , Furthermore, the control device preferably sets the voltage of the charge pumps ( LPPA . LppB . LPMA . LPMB ), if used, or the voltage converter ( SVPA . SVPB . SVMA . SVMB ), if used.

The control device ( ST ) is preferred by the exemplary computer system ( .mu.C ) controlled. This preferably detects all measurement parameters that are detected in the device and, if necessary, suitably matches the operating parameters. The computer system ( .mu.C ) preferably via an internal data bus ( IB ) with the control unit ( ST ). The computer system ( .mu.C ) transmitted to the tax system ( ST ) essential operating parameters, such as the setting which type of state diagram is to be used or how long the control device ( ST ) leave the H-bridge (H) in the "PQZ" state may or which cross-currents, for example, when entering the "PAus" state, for example by means of a current source transistor (eg T2 ), etc. If the supply voltage ( VCC ) comes from a voltage regulator, which may be part of the device, it makes sense if its operating parameters, in particular the voltage ( VCC ) against the reference potential (here GND ), also from the computer system ( .mu.C ) is controlled. This may also apply to voltage transformers ( SVPA . SVPB . SVMA . SVMB ) or charge pumps ( LPPA . LppB . LPMA . LPMB ) for the supply of the H-bridge ( H ). The computer system ( .mu.C ) communicates via a data bus ( DB ) with hierarchically higher settled, not shown in the figures computer systems, such as a control unit in a car.

The first LED ( LED1 ) generated light pulses ( LP ) are optically ( operating room ) and possibly by means of a mirror optics ( RF ) from the headlight ( SW ) decoupled to the outside. Other radiation directions are typically provided by apertures ( BL ) is suppressed.

FIG. 16

shows an exemplary modified H-bridge ( H ) for use in a device gem. 15 and in modification of 3 , In contrast to the H-bridge of 3 can the H-bridge ( H ) of the 16 and the first LED ( LED1 ) now both for the delivery of optimized light pulses ( LP ) as well as for the optimized light output for lighting purposes, by switching between one on charge pumps ( LPPA . LppB . LPMA . LPMB ) or on voltage transformers ( SVPA . SVPB . SVMA . SVMB ) based energy supply and a direct energy supply from the total supply voltages ( VCC . GND ) by means of additional transistors ( T5 . T6 . T7 . T8 . T9 . T10 . T11 . T12 ) can be switched.

Should the first LED ( LED1 ) can be operated in a first operating mode in which the first LED ( LED1 ) as illuminants for illumination purposes (eg driving light) in a quasi-continuous operation ( QDB ) and can be operated in time division multiplexing in a second operating mode in which the first LED ( LED1 ) as measuring light source for generating light pulses ( LP ) is used in a pulsed mode (GPB), it is advantageous if the H-bridge ( H ) can be operated with different operating voltage sources, which are assigned to these two operating modes and optimized for each.

In the example of 16 The task is the example of an H-bridge (H) of 3 solved in that between the transistors ( T1 . T2 . T3 . T4 ) and their respective charge pump ( LPPA . LppB . LPMA . LPMB ) or their respective voltage transformer ( SVPA . SVPB . SVMA . SVMB ) an analog multiplexer ( T9 . T5 ; T8 . T12 ; T10 . T6 ; T7 . T11 ), which enables the respective transistor ( T1 . T2 . T3 . T4 ) in quasi-continuous operation ( QDB ) directly with the respective total supply voltages ( VCC . GND ) and in pulsed mode (GPB) with the output ( 9 . 12 . 13 . 15 ) respective charge pump ( LPPA . LppB . LPMA . LPMB ) or the respective voltage transformer ( SVPA . SVPB . SVMA . SVMB ) connect to. Switching is done by the control unit ( ST ) of the H-bridge (H).

In detail, the task of increasing the voltage at the light source, the first LED ( LED1 ), for better flooding or evacuation of the light source, the first LED ( LED1 ), with charge carriers solved as follows:

The first transistor ( T1 ) with its first connection ( 1 ) not with the tenth connection ( 10 ) of the positive charge pump ( LppB ) or voltage transformers ( SVPB ) connected to the fast suction of the stored charge carriers, but with the twenty-sixth port ( 26 ) of the fifth transistor ( T5 ). This fifth transistor ( T5 ) is now with its twenty-sixth port ( 26 ) instead with the tenth terminal ( 10 ) of the positive charge pump ( LppB ) or voltage transformers ( SVPB ) for fast suction of the stored charge carriers connected. The fifth transistor ( T5 ) is between the tenth terminal ( 10 ) of the positive charge pump ( LppB ) or voltage transformers ( SVPB ) for fast extraction of the stored charge carriers and the first connection ( 1 ) of the first transistor ( T1 ). The fifth transistor ( T5 ) is controlled by the control device ( ST ) via the fifth control connection ( G5 ) of the fifth transistor ( T5 ) controlled.

The first transistor ( T1 ) is also equipped with its first connection ( 1 ) with the eighteenth terminal ( 18 ) of the ninth transistor ( T9 ) connected. This ninth transistor ( T9 ) is in the example of 16 now with its seventeenth port ( 17 ) with the positive total supply voltage ( VCC ) connected. The ninth transistor ( T9 ) bridges the positive charge pump ( LppB ) or voltage transformers ( SVPB ) for fast suction of the stored charge carriers, when it is controlled by the control device ( ST ) is switched through. To the positive charge pump ( LppB ) or voltage transformers ( SVPB ) to the fast suction of the stored charge carriers does not have to short circuit, then the fifth transistor ( T5 ) by the control device ( ST ) when the ninth transistor ( T9 ) electrically by the control device ( ST ) is turned on. The ninth transistor ( T9 ) must be disabled when the fifth transistor ( T5 ) by the control device ( ST ) is turned on. The fifth transistor ( T5 ) and the ninth transistor ( T9 ) thus constitute a first analog multiplexer which is controlled by the control device ( ST ) is controlled. The ninth transistor ( T9 ) is controlled by the control device ( ST ) via the ninth control connection ( G9 ) of the ninth transistor ( T9 ) controlled.

The third transistor ( T3 ) with its fifth connection ( 5 ) not with the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) or voltage transformers ( SVPA ) to produce a fast turn-on edge, but with the thirtieth 30 ) of the eighth transistor ( T8 ). This eighth transistor ( T8 ) is now with its twenty-ninth connection ( 29 ) instead with the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) or voltage transformers ( SVPA ) to generate a fast turn-on edge. The eighth transistor ( T8 ) is between the fourteenth terminal ( 14 ) of the positive charge pump ( LPPA ) or voltage transformers ( SVPA ) for generating a fast switch-on edge and the fifth connection ( 5 ) of the third transistor ( T3 ). The eighth transistor ( T8 ) is controlled by the control device ( ST ) via the eighth control connection ( G8 ) of the eighth transistor ( T8 ) controlled.

The third transistor ( T3 ) is also connected to its fifth port ( 5 ) with the twenty-second port ( 22 ) of the twelfth transistor ( T12 ) connected. This twelfth transistor ( T12 ) is in the example of 16 now with its twenty-first port ( 21 ) with the positive total supply voltage ( VCC ) connected. The twelfth transistor ( T12 ) bridges the positive charge pump ( LPPA ) or voltage transformers ( SVPA ) for generating a fast switch-on edge when it is triggered by the control device ( ST ) is switched through. To the positive charge pump ( LPPA ) or voltage transformers ( SVPA ) does not short-circuit to produce a fast turn-on edge, the eighth transistor ( T8 ) by the control device ( ST ) when the twelfth transistor ( T12 ) by the control device ( ST ) is turned on. The twelfth transistor ( T12 ) must be disabled if the eighth transistor ( T8 ) by the control device ( ST ) is turned on. The eighth transistor ( T8 ) and the twelfth transistor ( T12 ) thus constitute a second analog multiplexer which is controlled by the control device ( ST ) is controlled. The twelfth transistor ( T12 ) is controlled by the control device ( ST ) via the twelfth control terminal ( G12 ) of the twelfth transistor ( T12 ) controlled.

The second transistor ( T2 ) with its fourth connection ( 4 ) not with the fifteenth port ( 15 ) of the negative charge pump ( LPMA ) or voltage transformers ( SVMA ) to generate a fast turn-on edge, but with the twenty-seventh 27 ) of the sixth transistor ( T6 ). This sixth transistor ( T6 ) is now with its twenty-eighth port ( 28 ) instead with the fifteenth port ( 15 ) of the negative charge pump ( LPMA ) or voltage transformers ( SVMA ) to generate a fast turn-on edge. The sixth transistor ( T6 ) is between the fifteenth port ( 15 ) of the negative charge pump ( LPMA ) or voltage transformers ( SVMA ) for generating a fast switch-on edge and the fourth connection ( 4 ) of the second transistor ( T2 ). The sixth transistor ( T6 ) is controlled by the control device ( ST ) via the sixth control connection ( G6 ) of the sixth transistor ( T6 ) controlled.

The second transistor ( T2 ) is also available with its fourth port ( 4 ) with the nineteenth terminal ( 19 ) of the tenth transistor ( T10 ) connected. This tenth transistor ( T10 ) is in the example of 16 now with its twentieth connection ( 20 ) with the negative supply voltage ( GND ) connected. The tenth transistor ( T10 ) bridges the negative charge pump ( LPMA ) or voltage transformers ( SVMA ) for generating a fast switch-on edge when it is triggered by the control device ( ST ) is switched through. To the negative charge pump ( LPMA ) or voltage transformers ( SVMA ) for generating a fast turn-on edge, the sixth transistor ( T6 ) by the control device ( ST ) when the tenth transistor ( T10 ) by the control device ( ST ) is turned on. The tenth transistor ( T10 ) must be disabled if the sixth transistor ( T6 ) by the control device ( ST ) is turned on. The sixth transistor ( T6 ) and the tenth transistor ( T10 ) thus constitute a third analog multiplexer which is controlled by the control device ( ST ) is controlled. The tenth transistor ( T10 ) is controlled by the control device ( ST ) via the tenth control connection ( G10 ) of the tenth transistor ( T10 ) controlled.

The fourth transistor ( T4 ) is with its eighth port ( 8th ) not with the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) or voltage transformers ( SVMB ) for quick suction of the connected to the stored charge carriers, but with the thirty-first connection ( 31 ) of the seventh transistor ( T7 ). This seventh transistor ( T7 ) is now with its thirty-second port ( 32 ) instead with the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) or voltage transformers ( SVMB ) for fast suction of the stored charge carriers connected. The seventh transistor ( T7 ) is between the twelfth connection ( 12 ) of the negative charge pump ( LPMB ) or voltage transformers ( SVMB ) for fast extraction of the stored charge carriers and the eighth connection ( 8th ) of the fourth transistor ( T4 ). The seventh transistor ( T7 ) is controlled by the control device ( ST ) via the seventh control connection ( G7 ) of the seventh transistor ( T7 ) controlled.

The fourth transistor ( T4 ) is also equipped with its eighth port ( 8th ) with the twenty-third terminal ( 23 ) of the eleventh transistor ( T11 ) connected. This eleventh transistor ( T11 ) is in the example of 16 now with its twenty-fourth port ( 24 ) with the negative supply voltage ( GND ) connected. The eleventh transistor ( T11 ) bridges the negative charge pump ( LPMB ) or voltage transformers ( SVMB ) for fast suction of the stored charge carriers, when it is controlled by the control device ( ST ) is switched through. To the negative charge pump ( LPMB ) to quickly short-circuit the stored charge carriers, then the seventh transistor ( T7 ) by the control device ( ST ) when the eleventh transistor ( T11 ) electrically by the control device ( ST ) is turned on. The eleventh transistor ( T11 ) must be disabled when the seventh transistor ( T7 ) by the control device ( ST ) is turned on. The seventh transistor ( T7 ) and the eleventh transistor ( T11 ) thus constitute a fourth analog multiplexer which is controlled by the control device ( ST ) is controlled. The eleventh transistor ( T11 ) is controlled by the control device ( ST ) via the eleventh control connection ( G11 ) of the eleventh transistor ( T11 ) controlled.

FIG. 17

17 equals to 16 with the difference that the charge pumps ( LppB . LPPA . LPMA . LPMB ) or voltage transformers ( SVPA . SVPB . SVMA . SVMB ) from a fifth supply voltage source ( VCC5 ) and for the operation as a lighting means of a lighting device, the supply directly from a sixth supply voltage source ( VCC6 ) and mass ( GND ) he follows. In this case, the sixth supply voltage source ( VCC6 ) the output of a sixth voltage regulator ( SR6 ) for the provision of the sixth supply voltage ( VCC6 ). The fifth supply voltage source ( VCC5 ) is preferably the output of a fifth voltage regulator ( SR5 ) for the provision of the fifth supply voltage ( VCC6 ). The supply of the first light-emitting diode ( LED1 ) in quasi-continuous operation ( QDB ) when using the first LED ( LED1 ) as illuminating means from the sixth positive supply voltage ( VCC6 ) and the sixth negative supply voltage ( GND6 ) carried out. When used in pulsed mode (GPB), the supply of the first LED ( LED1 ) preferably from the fifth supply voltage source ( VCC5 ) and the fifth negative supply voltage source ( GND5 ). For example, the output voltage of the sixth voltage regulator ( SR6 ) at its outputs ( VCC6 . GND6 ) in the magnitude of the forward voltage of the first LED ( LED1 ) lie.

The sixth voltage regulator ( SR6 ), the sixth positive supply voltage ( VCC6 ) and the sixth negative supply voltage ( GND6 ) provide.

The fifth voltage regulator ( SR5 ), the fifth positive supply voltage ( VCC5 ) and the sixth negative supply voltage ( GND5 ) provide.

The output voltage of the fifth voltage regulator ( SR5 ) should at its outputs ( VCC5 . GND5 ) preferably in the vicinity of the Bornetzspannung (eg 12V) of a motor vehicle ( automotive ) lie.

FIG. 18

1. a. der direkten Energieversorgung aus einer dritten positiven Versorgungsspannungsquelle (VCC3) und einer vierten positiven Versorgungsspannungsquelle (VCC4) für den Betrieb der ersten LED (LED1) als Leuchtmittel einer Beleuchtungsvorrichtung im Quasidauerbetrieb (QDB) einerseits und
2. b. der direkten Energieversorgung aus einer ersten positiven Versorgungsspannungsquelle (VCC1) und einer zweiten positiven Versorgungsspannungsquelle (VCC2) für den gepulsten Betrieb (GPB) als gepulste LED (LED1) andererseits

umgeschaltet werden kann. In dieser Konfiguration des Vorschlags sind also keine Ladungspumpen (LPPA, LPPB, LPMA, LPMB) oder Spannungsregler (SVPA, SVPB, SVMA, SVMB) neben dem ersten Spannungsregler (SR1) und dem zweiten Spannungsregler (SR2) bevorzugt vorgesehen.shows an exemplary modified H-bridge ( H ) for use in a device gem. 15 and in modification of 3 , In contrast to the H-bridge of 3 can the H-bridge ( H ) of the 18 and the first LED ( LED1 ) now both for the delivery of optimized light pulses ( LP ) in pulsed mode (GPB) as well as for the optimized light output for lighting purposes in quasi-continuous operation ( QDB ) can be used by now using a first analog multiplexer ( T9 . T5 ) and second analog multiplexer ( T8 . T12 ) between

1. a. the direct power supply from a third positive supply voltage source ( VCC3 ) and a fourth positive supply voltage source ( VCC4 ) for the operation of the first LED ( LED1 ) as the lighting means of a lighting device in quasi-continuous operation ( QDB ) on the one hand and
2. b. direct energy supply from a first positive supply voltage source ( VCC1 ) and a second positive supply voltage source ( VCC2 ) for pulsed operation (GPB) as a pulsed LED ( LED1 ) on the other hand

can be switched. In this configuration of the proposal, therefore, there are no charge pumps ( LPPA . LppB . LPMA . LPMB ) or voltage regulator ( SVPA . SVPB . SVMA . SVMB ) next to the first voltage regulator ( SR1 ) and the second voltage regulator ( SR2 ) is preferably provided.

In this case, the first supply voltage ( VCC1 ) the output of a first voltage regulator ( SR1 ).

The second supply voltage ( VCC2 ), the output of a second voltage regulator ( SR2 ).

The third supply voltage ( VCC3 ), the output of a third voltage regulator ( SR3 ).

The fourth supply voltage ( VCC4 ), the output of a fourth voltage regulator ( SR4 ).

As a negative supply voltage is in the example of 18 the negative total supply voltage ( GND ) used.

The supply of the first light-emitting diode ( LED1 ) in quasi-continuous operation ( QDB ) when using the first LED ( LED1 ) as illuminating means from the third and fourth supply voltage ( VCC3 . VCC4 ) carried out. When used in pulsed mode (GPB), the supply of the first LED ( LED1 ) preferably from the first and second supply voltage (VCC11, VCC2 ). For example, the output voltage of the first and second voltage regulators ( SR1 . SR2 ) at their outputs, the first and second supply voltage ( VCC1 . VCC2 ), the magnitude of the forward voltage of the first LED ( LED1 ), while the output voltage of the third and fourth voltage regulators ( SR3 . SR4 ) at its outputs, the third and fourth supply voltage source ( VCC3 . VCC4 ), in each case preferably in the vicinity of the board mains voltage (eg 12 V) of a motor vehicle ( automotive ) lies. Note that no analog multiplexers are provided in the negative branches of the half-bridge since an increase in the amount of the negative total supply voltage ( GND ) is not provided here.

Most preferably, the control device ( ST ) as voltage at the second control terminal ( G2 ) of the second transistor ( G2 ) is now a reference voltage when it is to be turned on, so that the second transistor ( T2 ) operates in the on state as a transistor power source. This is especially advantageous if this is the case during operation of the first LED ( LED1 ) in quasi-continuous operation ( QDB ) as lighting for illumination purposes. This will reduce the amount of energy permanently in the first LED ( LED1 ) is controlled. The fourth and third voltage regulator ( SR3 . SR4 ), the third and fourth supply voltage ( VCC3 . VCC4 ) can then be executed as a switching regulator, while the control losses in the second transistor ( T2 ) are minimized in this Quasidauerbetrieb and thus the second transistor ( T2 ) heated only slightly. It was therefore recognized in the preparation of the proposal that it is advantageous to use the positive supply voltage ( VCC3 . VCC4 ) for the supply of the first LED ( LED1 ) in quasi-continuous operation ( QDB ) in each case a switching regulator as a voltage regulator ( SR3 . SR4 ) and at the same time generate the electricity in quasi-continuous operation ( QDB ) through the second transistor ( T2 ) as Stromquellentransistor to regulate.

In the example of 18 The pulsed current for pulsed operation (GPB) is also regulated. The control device ( ST ) provides this also when turning off the first LED ( LED1 ) as voltage at the fourth control terminal ( G4 ) of the fourth transistor ( G4 ) now a reference voltage, if this for faster turning off the first LED ( LED1 ) should be turned on so that the fourth transistor ( T4 ) also operates as a power source in the on state. This reliably prevents overloading of the first LED ( LED1 ), if, for example, the second positive supply voltage ( VCC2 ) for whatever reason, a voltage peak in the control range of the fourth transistor ( T4 ) having.

FIG. 19

19 shows the simplest variant with a supply from a common voltage source with a basic supply voltage ( VCC ), which may be, for example, the power supply from the board network of a motor vehicle. A third voltage regulator ( SR3 ) generated from the basic supply voltage ( VCC ) a third supply voltage ( VCC3 ). A second voltage regulator ( SR2 ) generated from the basic supply voltage ( VCC ) a second supply voltage ( VCC2 ). The already described above second analog multiplexer from the eighth transistor ( T8 ) and the twelfth transistor ( T12 ) switches between the third supply voltage ( VCC3 ) and the second supply voltage ( VCC2 ) in dependence on the two control signals ( G13 . G12 ) around. These two control signals are generated by the control unit ( ST ) together with the control signals ( G1 . G2 . G3 . G4 ) for the H-bridge control of the H-bridge ( H ) generated.

The third supply voltage ( VCC3 ) is used for quasi-continuous operation ( QDB ), in which the first LED ( LED1 ) as a lighting means of a lighting device, for example a vehicle headlight ( SW ), is used. The third supply voltage ( VCC3 ) is used in the example of 19 via the twelfth transistor ( T12 ) and the switched-on third transistor ( T3 ) in this quasi-continuous operation ( QDB ). Via the activated second transistor ( T2 ) is used in this quasi-continuous operation ( QDB ) the LED power dissipated. Possibly. again the second transistor ( T2 ) by the control unit by means of a reference voltage on the control line ( G2 ) of the second transistor ( T2 ) again as a power source by the control device ( ST ) operate. In this state, the eighth transistor ( T8 ) and the first transistor ( T1 ) as well as the fourth transistor ( T4 ) blocked.

The second supply voltage ( VCC2 ) is intended for pulsed operation (GPB). The magnitude of the voltage value of the second supply voltage ( VCC2 ) is preferably above the magnitude of the voltage value of the third supply voltage ( VCC3 ).

Should in the pulsed operation ( GPB ) the first LED ( LED1 ) are turned on quickly, the eighth transistor ( T8 ) and the third transistor ( T3 ) and the second transistor ( T2 ) open. The second transistor ( T2 ) may possibly be operated again as a power source in this switch-on. The twelfth transistor ( T12 ), the fourth transistor ( T4 ) and the first transistor ( T1 ) are switched off in this operating state of the H-bridge.

In a pulsed operation ( GPB ) the first LED ( LED1 ) are quickly switched off again, the first transistor ( T1 ) and the fourth transistor ( T4 ) open. The fourth transistor ( T4 ) can be operated again as a power source in this switch-off, in order to avoid overloading the first LED ( LED1 ) to avoid. The twelfth transistor ( T12 ), the eighth transistor ( T8 ), the third transistor ( T3 ) and the second transistor ( T2 ) are in this operating state of the H-bridge ( H ) are switched off or are just switching off.

FIG. 20

20 equals to 19 with the difference that the eighth transistor ( T8 ) has been omitted. The analog multiplexer for switching the supply voltage between the third supply voltage ( VCC2 ) and the second supply voltage ( VCC2 ) is therefore no longer as in 19 mounted on the H-bridge (H), but by parallel arrangement of the twelfth transistor ( T12 ) to the third transistor ( T3 ) Became part of the H-bridge (H). The analog multiplexer consists in this example of the third transistor ( T3 ) and the twelfth transistor ( T12 ).

The third supply voltage ( VCC3 ) is again for quasi-continuous operation ( QDB ), in which the first LED ( LED1 ) as a lighting means of a lighting device, for example a vehicle headlight ( SW ), is used. The third supply voltage ( VCC3 ) is used in the example of 19 via the twelfth transistor ( T12 ) in this quasi-continuous operation ( QDB ). Via the activated second transistor ( T2 ) is used in this quasi-continuous operation ( QDB ) the LED power dissipated. Possibly. again the second transistor ( T2 ) by the control unit by means of a reference voltage on the control line ( G2 ) of the second transistor ( T2 ) again as a power source by the control device ( ST ) operate. In this state, the third transistor ( T3 ) and the first transistor ( T1 ) as well as the fourth transistor ( T4 ) blocked.

The second supply voltage ( VCC2 ) is again intended for pulsed operation (GPB). The magnitude of the voltage value of the second supply voltage ( VCC2 ) is preferably above the magnitude of the voltage value of the third supply voltage ( VCC3 ).

Should in the pulsed operation ( GPB ) the first LED ( LED1 ) are turned on quickly, the third transistor ( T3 ) and the second transistor ( T2 ) open. The second transistor ( T2 ) may possibly be operated again as a power source in this switch-on. The twelfth transistor ( T12 ), the fourth transistor ( T4 ) and the first transistor ( T1 ) are switched off in this operating state of the H-bridge (H).

If in a pulsed mode (GPB) the first LED ( LED1 ) are quickly switched off again, the first transistor ( T1 ) and the fourth transistor ( T4 ) open. The fourth transistor ( T4 ) can be operated again as a power source in this switch-off, in order to avoid overloading the first LED ( LED1 ) to avoid. The twelfth transistor ( T12 ), the third transistor ( T3 ) and the second transistor ( T2 ) are switched off in this operating state of the H-bridge or just turn off.

FIG. 21

21 shows a particularly simple variant of the proposed device. The light source, the first LED ( LED1 ) by means of an H-bridge (H) from a first half-bridge ( HB1 : T1 . T2 ) and a second half bridge ( HB2 : T3 . T4 ) supplied with electrical energy. The light source, the first LED ( LED1 ), with a first connection, the cathode ( K ) of the first LED ( LED1 ), with the output of the first half-bridge ( HB1 : T1 . T2 ) connected. The light source, the first LED ( LED1 ), is connected to a second terminal, the anode ( A ) of the first LED ( LED1 ), with the output of the second half-bridge ( HB2 : T3 . T4 ) connected. The first half bridge ( HB1 : T1 . T2 ) and the second half-bridge ( HB2 : T3 . T4 ) are connected to a common positive supply voltage, the first positive supply voltage ( VCC1 ), and with a single common negative supply voltage, the reference potential ( GND ), supplied with electrical energy to the light source, the first LED ( LED1 ) can be passed. An exemplary first voltage regulator ( SR1 ) generates the first positive supply voltage ( VCC1 ) from the positive total supply voltage ( VCC ). This can also be a linear regulator. Preferably, the first positive supply voltage ( VCC1 ) as the output voltage of the voltage regulator ( SR1 ) in this example depends on whether the state of the overall system in quasi-continuous operation ( QDB ) for illumination purposes or in pulsed mode (GPB) for emitting light pulses for measurement purposes or for data transmission.

FIG. 22

The state diagram of 22 corresponds to the state diagram of 9 However, the state diagram is now for the operation of the exemplary modified H-bridge ( H ) of the 16 to 21 was modified.

The state diagram is used in the exemplary context with the 20 and 21 , as possible forms of the proposed H-bridge ( H ).

The switching states of the transistors ( T1 . T2 . T3 . T4 . T12 ) are controlled by the control device ( ST ) controlled and controlled. Possibly. the entire device has measuring means ( HCV . HCI1 . HCI2 . HCI3 . HCI4 . HCI12 ) in order to check the switching state of the transistors ( T1 . T2 . T3 . T4 . T12 ) close. These measuring devices transmit their measurement results either to said computer system ( .mu.C ) that the control device ( ST ) controls where the measurement results are evaluated and / or forward the measurement results of the control device ( ST ) directly to, the output signals then depend on these results then at least partially. The overall apparatus can be provided via measuring means for detecting the partial flows in the half-bridges ( HB1 . HB2 ) of the H-bridge ( H ) feature.

In particular, it can be determined via a first measuring device ( Rs1 ) in the first half bridge ( HB1 : T1 . T2 ), which converts the electrical current through part of the first half-bridge ( HB1 : T1 . T2 ) and converted into an electrical voltage which then converts by a not shown in the figures measuring device in a measured value for this electric current, which then the arithmetic unit ( .mu.C ) or the control unit ( ST ) for the control of the H-bridge or the charge pumps ( LPPA . LppB . LPMA . LPMB ) or the voltage converter ( SVPA . SVPB . SVMA . SVMB ) or the voltage regulator ( SR1 . RS2 ) or the control unit ( ST ) is made available.

In particular, it can via a second measuring means ( Rs2 ) in the second half-bridge ( HB2 : T3 . T4 ), which directs the electrical current through part of the second half-bridge ( HB2 : T3 . T4 ) and converted into an electrical voltage which then converts by a not shown in the figures measuring device in a measured value for this electric current, which then the arithmetic unit ( .mu.C ) or the control unit ( ST ) for the control of the H-bridge or the charge pumps ( LPPA . LppB . LPMA . LPMB ) or the voltage converter ( SVPA . SVPB . SVMA . SVMB ) or the voltage regulator ( SR1 . RS2 ) or the control unit ( ST ) is made available.

The H Bridge (H) may preferably be in a first intermediate state ( Z ) operate. In this intermediate state, the first transistor ( T1 ), the second transistor ( T2 ), the third transistor ( T3 ), the fourth transistor ( T4 ) and the twelfth transistor ( T12 ) switched off. The intermediate state ( Z ) is suitable for quasi-continuous operation ( QDB ) when the first LED ( LED1 ) as a lighting means of a lighting device, for example a headlight of a motor vehicle ( automotive ), used for lighting purposes.

The H Bridge ( H ) may preferably be in an intermediate state ( PZ ) of pulsed operation (GPB). Even in this intermediate state ( PZ ) of the pulsed operation (GPB) is the first transistor ( T1 ), the second transistor ( T2 ), the third transistor ( T3 ), the fourth transistor ( T4 ) and the twelfth transistor ( T12 ) switched off. The intermediate state ( PZ ) of the pulsed operation ( GPB ) is provided for pulsed operation (GPB) when the first LED ( LED1 ) is used as a measuring means of a sensor device, for example a distance measuring device of a motor vehicle, eg for distance measurement purposes. The distinction between the first intermediate state ( Z ) and this intermediate state ( PZ ) of pulsed operation (GPB) is important when only one H-bridge with four transistors ( T1 . T2 . T3 . T4 ) acc. 1 and only one voltage regulator should be used (see 21 ). In this case, the voltage at the fifth connection ( 5 ) of the third transistor ( T3 ) and at the first connection ( 1 ) of the first transistor ( T1 ) after switching in any direction between pulsed operation ( GPB ) and quasi-continuous operation ( QDB ) in the example of 20 only from the voltage value of a first supply voltage ( VCC1 ) to the voltage value of a third supply voltage ( VCC3 ) are transhipped. This typically requires some time since the voltage regulator ( SR2 ) must first adjust the new supply voltage. Therefore, it is better with two voltage regulators, a first voltage regulator ( SR1 ) and a third voltage regulator ( SR3 ), which is the first supply voltage ( VCC1 ) and the third supply voltage ( VCC3 ) and then by means of an analogue multiplexer ( T3 . T12 ), which is preferably part of the H-bridge (H), between these supply voltages ( VCC1 . VCC3 ) switch.

The second overall state, the "PAn" state is no longer than a switch-on time in the light pulse mode ( τ _pp ), which is preferably smaller than the charge carrier lifetime ( τ ) Is, since the control is carried out according to the here-proposed technical teaching with an increased operating voltage in this light pulse mode in the flow direction of the LEDs. The third overall state, the "PAus" state, is analogously also no longer than a clearing-out time ( τ _pn ), the clearing time ( τ _pn ) smaller than the carrier lifetime ( τ ) Is, since the control is carried out according to the here-proposed technical teaching with an increased operating voltage in this light pulse operation in the reverse direction of the LEDs. It is of particular importance that the space charge zone of the light emitting diodes may not be emptied. The switch-on time ( τ _pp ) must be smaller than the charge carrier lifetime ( τ ) be.

In quasi-continuous operation ( QDB ), the H-bridge ( H ) of the intermediate state ( Z ) into the "BAn" state ( BAn ) and switch back. This change is made by the control device ( ST ) controlled. In this "BAn" state ( BAn ), the first LED ( LED1 ) is energized as a lighting means of a lighting device more or less permanently. The first transistor ( T1 ) and the fourth transistor ( T4 ) and the third transistor ( T3 ) are switched off. The twelfth transistor ( T12 ) connects the first LED ( LED1 ) with the first voltage source ( SR1 ) and thus with the first supply voltage. The first voltage source ( SR1 ) is therefore designed for permanent operation. Their time constants may be longer, while they must be able to withstand even longer periods of power dissipation. The second transistor ( T2 ) is also on. Preferably, however, it works as a power source. In that case he is able to control the power consumption by the first LED, since then he will be able to control the current through the first LED ( LED1 ) can regulate. It was therefore recognized in the preparation of the proposal that it is of particular advantage to whom the proposed H-bridge is a current source or a current source transistor ( T2 ).

In quasi-continuous operation ( QBD ), the H-bridge ( H ) of the intermediate state ( Z ) to the optional state "K" and back. In quasi-continuous operation ( QBD ), the H-bridge ( H ) from the "PAus" state ( Pout ) in the optional "k" state ( k ) and switch back. In pulsed mode (GPB), the H-bridge ( H ) from the "PAus" state (Paus) also into the optional "k" state ( k ) switch. In pulsed mode ( GPB ), the H-bridge ( H ) from the intermediate state for pulsed operation ( PZ ) also in the optional "k" state ( k ) and switch back. These changes are made by the control device ( ST ) controlled. In this condition ( K ), the first LED ( LED1 ) discharged as a lighting means of a lighting device more or less permanently. The "k" state (k) is optional in that, even in the intermediate state ( Z ) no current through the first LED ( LED1 ) flows. The "k" state ( k ) can be realized in two different ways. Basic principle is that the voltage drop across the first LED ( LED1 ) is brought to zero. This requires a short circuit of the first LED ( LED1 ). This happens in the example of 20 preferably via one of the supply voltages, either the second positive supply voltage ( VCC2 ) or the negative supply voltage ( GND ).

In the first case, in the example of 20 are the first transistor ( T1 ) and the third transistor ( T3 ) switched through electrically conductive. The fourth transistor ( T4 ) and the second transistor ( T3 ) and the twelfth transistor ( T12 ) therefore do not block and conduct the electrical current. In this case, the shorting of the first LED ( LED1 ) So via the second positive supply voltage ( VCC2 ).

In the second case, in the example of 20 are the second transistor ( T2 ) and the fourth transistor ( T4 ) switched through electrically conductive. The first transistor ( T1 ) and the third transistor ( T3 ) and the twelfth transistor ( T12 ) therefore do not block and conduct the electrical current. In this case, the shorting of the first LED ( LED1 ) So about the negative supply voltage ( GND ).

In quasi-continuous operation ( QDB ), the H-bridge ( H ) of the intermediate state ( Z ) into the optional "BAus" state ( BFrom ) and switch back. This change is made by the control device ( ST ) controlled. In this "construction" state ( BFrom ), the first LED ( LED1 ) operated as a lighting means of a lighting device more or less permanently in the reverse direction. The "BAus" state ( BFrom ) is insofar optional, because even in the intermediate state ( Z ) no current through the first LED ( LED1 ) flows and therefore can not shine permanently. The state "PAus" is thereby realized, the first LED ( LED1 ) is operated in the reverse direction. These are in the "PAus" state relative to the 20 the first transistor ( T1 ) in the fourth transistor ( T4 ) switched on. The twelfth transistor ( T12 ) and the third transistor ( T3 ) and the second transistor ( T2 ) are exemplary based on the 20 switched off.

The "PZ" state and the intermediate state ( Z ) form more or less a unit, which is indicated as a dashed bubble.

Optionally, a transition from the "BAus" state to the "PZ" state is optionally possible. Direct transitions from the "k" state to the "BAn". Condition or back are preferably not allowed to exclude cross currents at this point. Direct transitions from the "BAus" state to the "BAn" state or back are also preferably not allowed in order to exclude cross currents at this point.

In quasi-continuous operation ( QDB ), the H-bridge (H) can be separated from the intermediate state ( Z ) into the intermediate state ( PZ ) for pulsed operation ( GPB ) and thus in the pulsed operation ( GPB ) and switch back. This change from pulsed operation ( GPB ) into quasi-continuous operation ( QDB ) and back is in the example of 21 with a transhipment of nodes connected to the new operating voltage.

In pulsed mode ( GPB ), the H-bridge can change its state from the intermediate state ( PZ ) for pulsed operation ( GPB ) change to the state "PAn". In this condition ( PAn ) the first LED ( LED1 ) are turned on as quickly as possible. For this, the first LED ( LED1 ) connected in this state as quickly as possible with the highest possible operating voltage to the PN transitions of the first LED ( LED1 ) to flood as quickly as possible with charge carriers. In the example of 20 this means that of the previously all switched-off transistors ( T1 . T2 . T3 . T4 . T12 ) now the third transistor ( T3 ) and the second transistor ( T2 ) are turned on. The change from the state "PAn" to the intermediate state ( PZ ) for pulsed operation (GPB) is theoretically possible, but preferably not provided. Rather, the H-bridge preferably changes to an intermediate state ( PQZ ) with a maximization of the cross-current in order to remove the charge carriers from the H-bridge and the first LED as soon as possible ( LED1 ) to remove. Here are the first LED ( LED1 ) and the turn - off transistors (in the example of FIG 20 the second transistor ( T2 ) and the third transistor ( T3 )) are cleared as quickly as possible of charge carriers. Since the turn-off transistors (In the example of the 20 the second transistor ( T2 ) and the third transistor ( T3 )) when switching from the state "PAn" in the state "QPZ" need some time to turn off, it makes sense to let a cross-flow flow through the H-bridge that removes these charge carriers. This achieves two effects:

First, the turn-off transistors (in the example, the second transistor T2 ) faster by the turn on transistor (In the example of 20 the second transistor ( T2 ) and the third transistor ( T3 )) discharged quickly. In the example of 20 takes the first transistor ( T1 ) thereby also a major part of the current, the turn-off second transistor ( T2 ) otherwise in the first LED ( LED1 ). In the example of 20 takes the fourth transistor ( T4 ) thereby also a large part of the current, the turning off the third transistor ( T3 ) otherwise in the first LED ( LED1 ).

Second, this leads to a faster reversal and thus discharge of the first LED ( LED1 ). It thus makes sense if the allowable cross-flow during turn-off of the turn-off transistors (in the example of 20 the second transistor ( T2 ) and the third transistor ( T3 )) is maximized in the transition from the "PAn" state to the "PAus" state via the "QPZ" intermediate state described herein, to thermal acceptability. This means that the transition from the "PAn" state to the "PAus" state is preferably via the "PQZ" state described here, with a short-term cross-flow when entering the "PAus" state, in contrast to the "PZ" Status is greater than the cross current in the "PZ" state or in the "PAus" state. In order to be able to achieve the mentioned crossflow maximization at the beginning in the "PAus" state, it is particularly advantageous to determine the essential parameters of the energy loss in the transistors (FIG. T1 . T2 . T3 . T4 ).

As a rule, the behavior of the transistors ( T1 . T2 . T3 . T4 ), it makes sense on the basis of the voltage drops to calculate the respective energy output. From the voltage drop across the first LED ( LED1 ) can usually be based on the axial current of the H-bridge (H) through the first LED ( LED1 ) getting closed. It may be useful in this context, two shunt resistors ( RS1 . RS2 ) eg in the ground lines of the H-bridge (H) to measure the current exactly (see 23 ) and not just from the voltage drop across the transistors ( T1 . T2 . T3 . T4 ) appreciate. Since the function of the transistors ( T1 . T2 . T3 . T4 ) is different, the first transistor ( T1 ) of the H-bridge ( H ) typically not equal to the third transistor ( T3 ) of the H-bridge (H) and that of the second transistor ( T2 ) of the H-bridge ( H ) typically not equal to the fourth transistor ( T4 ) of the H-bridge ( H ). The exact dimensioning will be determined by the expert by calculation and simulation taking into account the first LED used ( LED1 ) and the layout used for the typically used printed circuit. The control of the cross-currents is preferably carried out by controlling the voltage of the voltage regulator ( SR1 . SR2 ) and the regulation of the turn-on and turn-off of the transistors ( T1 . T2 . T3 . T4 ). As actual variables of such a regulation, the voltage across the first LED ( LED1 ), the voltage drops across the transistors ( T1 . T2 . T3 . T4 ) and optionally additionally measured values for the current through the respective half-bridges ( HB1 : T1 . T2 ; HB2 : T3 . T4 ) (eg the voltage drop across shunt resistors ( Rs1 . Rs2 )) as well as the voltage drops across the transistors ( T1 . T2 . T3 . T4 ) and the first LED ( LED1 ) be used.

Furthermore, it may be useful to use the transistors ( T1 . T2 / T3 . T4 ) for pulsed operation ( GPB ) as well as the transistors ( T2 . T3 ) for quasi-continuous operation ( QDB ) with one or more thermocouples that monitor the transistors during operation. Their parameters can also be used for the control.

The "PAus" state describes a further overall state of the device, wherein in one of the second transistors ( T2 ) and the third transistor ( T3 ) and the twelfth transistor ( T12 ) (by way of example with reference to 20 ) are locked. The first transistor ( T1 ) and the fourth transistor ( T4 ) are conductive. The LED ( LED1 ) emits no light and is electrically biased in the reverse direction.

FIG. 23

23 equals to 20 with the difference that here two shunt resistors, a first shunt resistor ( Rs1 ) and a second shunt resistor ( Rs2 ) are drawn. These shunt resistors ( Rs1 . Rs2 ) can be used by means of the voltage drop across these shunt resistors ( Rs1 . Rs2 ) on the current through the relevant half-bridge ( HB1 . HB2 ) of the H-bridge ( H ) close.

To switch on the current through the second transistor ( T2 ), the voltage between the fourth terminal ( 4 ) of the second transistor ( T2 ) and the negative supply voltage ( GND ) detected. At a known value of the first shunt resistor ( Rs1 ) then results from this detected voltage, the current through the second transistor ( T2 ).

To turn on the current through the fourth transistor ( T4 ), the voltage between the eighth terminal ( 8th ) of the fourth transistor ( T4 ) and the negative supply voltage ( GND ) detected. At a known value of the second shunt resistor ( Rs2 ) then results from this detected voltage, the current through the fourth transistor ( T4 ).

Most preferably, the measured values thus acquired are used for regulating the cross currents, in particular in the "QPZ" state or at the beginning of the "PAus" state or for stabilizing the color temperature of the emission of the first LED (FIG. LED1 ) in the "BAn" state in quasi-continuous operation ( QDB ).

FIG. 24

equals to 15 with the exemplary difference that an internal construction of the H-bridge, for example, the 15 and where the energy reserves ( C_LPPB . C_LPPA . C_LPMB . C_LPMA ) of the charge pumps ( LppB . LPPA . LPMB . LPMA ) are drawn.

Instead of charge pumps ( LppB . LPPA . LPMB . LPMA ), voltage boosters ( SVPB . SVPA . SVMB . SVMA ) or the like, which increase the supply voltage in amount relative to the amount of the respective positive or negative supply voltage. As regards the increase in the amount, the mean value of the voltage between the positive and negative supply voltage applies here. In the energy reserves of the voltage transformers ( SVPB . SVPA . SVMB . SVMA ) can also be inductors ( L_SVPB . L_SVPA . L_SVMB . L_SVMA ) or similar act.

FIG. 25

equals to 25 with the exemplary difference that by way of example a first H-bridge control unit ( HC1 ) is provided, which by means of a photosensitive sensor, here for example a first photodiode ( PD1 ), the light emission of the light source, here the exemplary first LED ( LED1 ), and so a readjustment of the control, in particular by adjusting the charge pump voltage of the charge pumps ( LppB . LPPA . LPMB . LPMA ) or voltage transformers ( SVPB . SVPA . SVMB . SVMA ) or the voltage regulator ( SR1 . SR2 ) in the form of the bias of the energy reserves ( C_LPPB . C_LPPA . C_LPMB . C_LPMA ) of the charge pumps ( LppB . LPPA . LPMB . LPMA ) or by adjusting the voltage converter voltage of the voltage converter ( SVPB . SVPA . SVMB . SVMA ) eg in the form of the no-load current through the energy reserves ( L_SVPB . L_SVPA . L_SVMB . L_SVMA ) the voltage converter ( SVPB . SVPA . SVMB . SVMA ), when these energy reserves are inductances, and by varying the residence times in the states " PAN "," PAUS " and " PQZ "Allows. In addition, the current through the first LED ( LED1 ) via shunt resistors ( Rs1 . Rs2 ) and depending on the condition (PAN, PAUS, PQZ , Z) the H-bridge ( H ) in pulsed mode (GPB). In quasi-continuous operation ( QDB ), in which the first LED ( LED1 ), for example, as the illuminant of a headlamp ( SW ) is operated by the first photodiode ( PD1 ) the brightness of the first illuminant ( LED1 ) are recorded and regulated. For this purpose, the control device ( ST ) the H-bridge ( H ) in the form that the first LED ( LED1 ) is preferably driven by a PWM modulation. Their amplitude is in the example of 23 by the voltage value of the third supply voltage ( VCC3 ) against the negative supply voltage ( GND ) substantially to voltage losses due to the turn-on resistances of the transistors ( T2 . T12 ) and the shunt resistor ( Rs1 ). With this voltage amplitude and the average temporal turn-on density (eg the duty cycle), two parameters are available that make it possible to readjust the color temperature and brightness. Measuring the light emission of the light source, the first LED ( LED1 ) can preferably by detecting stray light ( SL ) which is incident on the first photodiode ( PD1 ) falls. Because typically light from the outside through the optics ( operating room ) in the headlight ( SW ), it is expedient to use the modulation of the light, for example by the applied PWM, in order to detect the extraneous light signal from the useful signal in the H-bridge control unit ( HC1 ) or in the arithmetic unit ( .mu.C ) by signal processing. This separation by means of signal processing can be achieved, for example, by forming a cross-correlation between the received signal of the photodiode (FIG. PD1 ) or a signal derived therefrom, for example by filtering, and a synchronization signal corresponding to the transmission signal of the luminous means ( sync ) respectively. It is expedient if, for example, the arithmetic unit ( .mu.C ) the first measurement signal ( MS1 ) of the first H-bridge control unit ( HC1 ) and multiplied by the sampled PWM modulation drive signal. Since the PWM frequency is known, it is then expedient to remove all frequencies higher than half the PWM frequency from the spectrum by means of a low-pass filter. It then typically remains a DC signal, for example, for the brightness of the first LED ( LED1 ).

FIG. 26

equals to 25 with the exemplary difference that, by way of example, further illuminants ( LED2 ... n) are provided which emit light for illumination purposes unpulsed, wherein a locked wavelength range ( GWB ) through a filter ( F1 ) disappears. The device has in the example of 26 via another reflector ( RF2 ) and a second optic ( OP2 ) for collection and decoupling of the other bulbs ( LED2 ... n) generated headlight ( SWL ).

FIG. 27

27 equals to 26 in which a measuring device ( MV ), for example, a determination of the time of flight or other information such as the reflectivity of an object ( O ) from the reflected light pulses ( RLP ) allowed. That of the first LED ( LED1 ) emitted light pulses ( LP ) are not shown by an object ( O ), for example a motor vehicle in front, reflects and returns as reflected light pulses ( RLP ) to the proposed device, for example a proposed headlamp ( SW ) back. There, for example, they pass a third optic ( OP3 ) and a preferred third optical filter ( F3 ), which is preferably complementary to the first optical filter ( F1 ) is designed. That means, the first filter ( F1 ) blocks preferably in the spectrum of the other bulbs ( LED2 ... n) in the generated headlight light ( SWL ) the wavelength range used for the measurement ( VWB ) or attenuates it at least so far that no unnecessary additional burden arises here. In this respect, the first filter ( F1 ) optional. The first LED ( LED1 ) preferably radiates in the wavelength range used for the measurement ( VWB ). The third filter ( F3 ) now separates the wavelength range used for the measurement ( VWB ) preferably from the entire transmitted optical spectrum. The reflected light pulses ( RLP ) pass the third filter ( F3 ) preferably unattenuated and by the measuring sensor, preferably a measuring photodiode ( MD ), detected. The measuring device ( MV ) determined from the detected signal of the measuring diode ( MD ) transmits a measured variable and transmits this as a third measuring signal ( MS3 ) to the computer system ( .mu.C ). This measuring device ( MV ) can also contain more than one measuring diode ( MD ). A particularly preferred measuring diode is from the DE 10 2009 020 218 B3 known. Particularly preferably, a plurality of such measuring diodes are arranged in a diode array. The third optic ( OP3 ) is then preferably designed such that it forms an image of the reflected light pulse coming from the object ( RLP ) on the diode array ( MD ) generated. The control unit ( ST ) then generates the necessary control signals eg according to DE 10 2008 018 718 B4 , The gate signals provided there, the diodes ( MD ) of the diode array light sensitive and insensitive switch (in the literature these are also referred to as a shutter signal) are then switched so that the diodes ( MD ) preferably only in the states "k", " PAn "," PZ " Pout " and " PQZ "Can be switched sensitive. Most preferably, the diodes are in the states "Z", " BAn " and " BFrom "Not switched light sensitive, so they do not collect light in these states. In this way, a distance and a brightness information per pixel can then be obtained.

FIG. 28

28 equals to 27 with the difference that now a compensation transmitter ( K ) which is complementary to the first LED ( LED1 ) is controlled, whereby by controlling the amplitude and the phase position of the control of the compensation diode ( K ) a temporally more or less uniform illumination of the photodiode ( MD ) is achieved. A corresponding measurement method is for example from EP 2 783 232 B1 known.

FIG. 29

equals to 15 with the exemplary difference that, by way of example, a first LED ( LED1a ) through an exemplary first H-bridge ( H ) and a second LED ( LED1b ) through an exemplary second H-bridge ( H' ), are provided, what the possibility of delivery of colored light pulses ( FLP ) opened. A first LED ( LED1a ) is driven by means of a first H-bridge (H) and gives light pulses ( LP ) and / or light pulse sequences ( LPF ) in a first wavelength range ( WB1 ), so for example with a first color from. The first H-bridge ( H ) is thereby by the control device ( ST ) controlled. A second LED ( LED1b ) by means of a second H-bridge ( H' ) and also gives light pulses ( LP ) and / or light pulse sequences ( FLP ) in a second wavelength range ( WB2 ), so for example with a second color from. The first wavelength range ( WB1 ) differs preferably from the second wavelength range ( WB2 ) at least in the spectral intensity profile of the respective LED. The first color is thus preferably different from the second color. The second H-bridge ( H' ) is also by the control device ( ST ) controlled. The mixed scattered light ( SL1 . SL2 ) of the first LED ( LED1a ) and the second LED ( LED1b ) is exemplified here by a first photodiode ( PD1 ) and a second photodiode ( PD2 ) received. The first photodiode ( PD1 ) and the second photodiode ( PD2 ) different spectral wavelength ranges ( WB1 . WB2 ), in which you use the light of the first LED ( LED1 ) and for the light of the second LED ( LED2 ) are different sensitive. This difference should be chosen so that a conclusion on the luminosity of the first LED ( LED1a ) and the second LED ( LED1b ) is possible. For example, an exclusive sensitivity of the first photodiode ( PD1 ) for the light of the first LED ( LED1a ) and the second photodiode ( PD2 ) for the light of the second LED ( LED1b ). The structure then makes it possible to color light pulses ( FLP ) by means of light pulses ( LP ) from several, eg color-different light pulse sources ( LED1a . LED1b ) whose total intensity (total light output) for the duration of the color light pulse ( FLP ) remains constant and in which only the color, so for example the color angle, is pulsed. In this context, a constancy of the total light power is understood as meaning a change in the total light power within a period of the duration of the light pulse of less than 10%, while the ratio (division of the light power values) of the radiated light powers in a first wavelength range (FIG. WB1 ) of the radiated light to a second wavelength range ( WB2 ) of the radiated light changes by more than 10% relative to each other during this period.

FIG. 30

equals to 15 with the exemplary difference that it is a proposed RGB floodlight ( SW ) and that by way of example a first LED ( LED1a ) through an exemplary first H-bridge ( H ) and a second LED ( LED1b ) through an exemplary second H-bridge ( H' ) and a third LED ( LED1c ) through an exemplary third H-bridge ( H" ), are provided, what the possibility of delivery of color pulses ( FLP ) and the simultaneous delivery of color-determined, for example, white light, opened for illumination purposes in the entire RGB color spectrum.

FIG. 31

equals to 25 with the exemplary difference that an exemplary structurable filter, here in the form of a LCD Filters ( LCD ), in the beam path exemplarily within the optics ( CL . PL ) is inserted and projected. This allows the projection of structures as a mask. For example, it may be useful to limit the measurement to certain areas.

FIG. 32

equals to 25 with the exemplary difference that an exemplary micromirror array ( DLP ), here in the form of a LCD Filter is inserted into the beam path and the light beam cross-section spatially and / or temporally modulated.

FIG. 33

equals to 25 with the exemplary difference that an exemplary structurable filter, here in the form of a LCD Filters ( LCD ), in the beam path as an example behind the optics ( operating room ) and is projected as a shadow mask.

FIG. 34

shows exemplary positions of devices according to this proposal on an exemplary motor vehicle ( automotive ) in the form of an exemplary car. Reference should be made to the list of reference numerals.

At the front, the proposed device in the headlight for daytime running lights ( FST1 . FST2 ), the headlamps for dipped beam ( FAS1 . FSA2 ), the headlight for high beam ( FSF1 . FSF2 ). Likewise, there are the fog lights ( NL1 . NL2 ) (= Fog lights) in question. At the corners of the vehicle come the direction indicators ( BL1 . BL2 ) for the design according to this proposal in question. For positioning on the roof come warning lights and the blue light of rescue workers, etc. in question.

On the side, for example, come warning lights ( TWL1 . TWL2 ) for vehicles in the blind spot, which are typically provided on the rear-view mirrors in question.

At the rear of the vehicle are in particular the brake lights ( BRL1 . BRL2 ), the reversing lights ( RFL1 . RFI2 ), the fog tail lights ( NRL1 . NRL2 ) and the tail light ( RL1 . RL2 ) for an embodiment according to this proposal in question.

There are decorative lights around the entire vehicle ( ZL1 . ZL2 ) for an embodiment according to this proposal in question.

FIG. 35

shows an exemplary communication between a vehicle ( automotive ), with a proposed headlamp ( SW ), and a device of the traffic infrastructure, here by way of example a traffic light ( AMP ). By way of example, it is assumed that the right front headlamp of the vehicle is designed as proposed and can emit pulsed light. The vehicle ( automotive ) is then able, for example, by a modulation of the pulse spacing in pulsed mode ( GPB ) Information to the device of the traffic infrastructure, here by way of example a traffic light ( AMP ) to send. The traffic light receives this pulse train through an optical receiver. This can be, for example, the control of the traffic light ( AMP ), the condition of the traffic light ( AMP ), for example jumping from red to green at night when there is no other requirement. Conversely, the traffic light ( AMP ) also send data to the vehicle by means of an optical pulse train. If the pulses are short enough and not too frequent, and the spectrum produced by the pulsation does not have any modulation frequencies that are perceptible by a human eye, they are no longer readily perceived by a human observer. The proposed devices are therefore intended to quasi-continuous operation as preferably shorter than 10μs, better shorter than 3μs, better shorter than 2μs, better shorter than 1μs, better shorter than 500ns, better shorter than 200ns, better shorter than 100ns, better shorter than 50ns, better shorter than 20ns, better shorter than 10ns, better shorter than 5ns, better shorter than 4ns, better shorter than 2ns, better shorter than 1ns, better shorter than 500ps, better shorter than 200ps, better shorter than 100ps, better shorter than 50ps, better shorter than 20ps, better shorter than 10ps, better shorter than 5ps, better shorter than 2ps, better left shorter than 1ps and then return to quasi-dusk operation. In quasi-continuous operation, the energy supply preferably takes place from voltage transformers with a preferably lower maximum light output than in pulsed operation with a preferably massively increased pulsed light power and a preferred energy supply from charge pumps.

FIG. 36

shows an exemplary communication between a first vehicle ( automotive ) and a second vehicle ( Kfz2 ), each with a proposed headlamp ( SW ), whereby these by means of these headlights ( SW ) a) the distances to each other a1 ) active and a2 ) passively determine and b) exchange data.

1. 1. als Beleuchtungsvorrichtung
2. 2. als Messvorrichtung (z.B. zur Messung des Abstands)
3. 3. als Sender einer Datenschnittstelle

For this example, the first vehicle ( Kfz1 ) by means of a proposed device (eg 28 ) the distance to the preceding second vehicle ( Kfz2 ). At the same time, the first vehicle ( Kfz1 ) the light pulses ( LP ) of these measurement signals to the preceding second vehicle ( Kfz2 ) at the same time information, such as the own speed, the measured distance and the acceleration state (brake pedal pressed or not, etc.) or also their own, otherwise determined position, to communicate. Other data transfers are conceivable. It is therefore proposed that the headlight of the first vehicle ( Kfz1 ) in a threefold way

1. 1. as a lighting device
2. 2. as a measuring device (eg for measuring the distance)
3. 3. as a sender of a data interface

Particularly preferred is at least one LED ( LED1 ) of the headlamp ( SW ) used for these three purposes simultaneously.

In addition, an LED ( LED1 ) within the headlamp ( SW ) then also be used as a receiver. However, this requires that no light is emitted in the time of reception in order to avoid overloading. In that case, a quadruple use of the LED ( LED1 ) are present.

FIG. 37

36 shows the H-bridge of 1 , wherein the first positive supply voltage ( VCC1 ) of the H-bridge of 1 and the second positive supply voltage ( VCC2 ) of the H-bridge of 1 here equal to the positive total supply voltage ( VCC ) and wherein the first negative supply voltage ( GND1 ) of the H-bridge of 1 and the second negative supply voltage ( GND2 ) of the H-bridge of 1 here equal to the negative total supply voltage ( GND ) are.

Figure 38

38 shows the actual H-bridge (H) with the first half bridge ( HB1 ) from the series connection of the first transistor ( T1 ) and the series connection of the second transistor ( T2 ) as well as with the second half-bridge ( HB2 ) from the series connection of the third transistor ( T3 ) and the series connection of the fourth transistor ( T4 ).

FIG. 39

39 equals to 27 with the difference that instead of a single sensor ( MD ) a two-dimensional arrangement of time-controllable photosensitive sensors ( TOFIMG ) for the detection of the light pulses ( LP ) or color light pulses ( FLP ) is used. In this context, let's look at the scriptures DE 10 2008 018 718 B4 and DE 10 2009 020 218 B3 directed.

glossary

• LED Light emitting diode or light emitting diode. For the purposes of this disclosure, it may also be an interconnection of a plurality of light-emitting diodes and other components which, as a group, have the same function of light emission in the case of a voltage in the direction of flow, such as a single light-emitting diode, wherein the forward voltage of such a group may differ , Preferably, it is a serial connection (LED chain) of individual LEDs. As LED in the sense of this disclosure, laser diodes are also included.
• LIDAR (Short for light detection and ranging), also Ladar (laser detection and ranging) is a radar very related method for optical distance and speed measurement and for remote measurement of atmospheric parameters. Instead of the radio waves at the radar laser beams are used.
• Flash LIDAR The Flash Lidar emits a single light pulse and the light time ( TOF ) of this light pulse from the transmitter via the reflection on an object ( O ) back to a receiver direction resolved, for example, measured with a so-called TOF camera or time-of-flight camera. This allows an environment map ( UK ) are created without requiring moving parts.
• TOF distance measurement With the TOF distance measurement the duration of a light pulse ( LP ) or colored light pulses ( FLP ) and from this at a known speed of a radiation packet a distance ( d . d1 . d2 . d3 ).
• 3D Imaging Sub 3D Imaging is understood as the creation of an image which, on the one hand, comprises brightness information per camera pixel, as on a normal camera, but on the other hand also includes distance information per camera pixel. Such cameras preferably work with a time of flight measurement (TOF cameras). In connection with such light transit time measurement, for example, the DE 10 2009 020 218 B3 known.
• Optical Data Link Optical data link is a data connection which is produced by means of a modulated light beam as a transmission medium.
• Car2Car Communication Car2Car-Communication is the data communication between two vehicles ( Kfz1 . Kfz2 ).
• Charge pump A charge pump is a device that is typically part of the integrated drive circuit, with which the first LED ( LED1 ) is controlled via the proposed H-bridge (H). As a charge pump, English charge pump, several different electrical circuits are summarized, which increase electrical voltages in the amount of the voltage value or reverse direct voltages in the polarity. In the sense of this disclosure, it is about a further lowering of the negative supply potential ( GND ) or to further increase the positive supply voltage ( VCC ). The output voltage of a charge pump is typically a DC voltage. If the input voltage is also a DC voltage, the charge pump counts among the DC-DC converters. Charge pumps are an essential feature without magnetic components such as coils or transformers. Charge pumps transport the electrical charge preferably by means of electrical capacitors and by periodic switching with switches, which can be produced with different levels of electrical output voltages. The procedures are similar to when bucket water is transported from a low location to a higher location where it is collected with higher potential energy. Because the first LED ( LED1 ) is only pulsed, no continuous operation is required and an external storage capacity can be charged between the light pulses to be emitted by the respective charge pump. Instead of the charge pumps, voltage converters can also be used according to this disclosure.
• Voltage transformer A voltage converter is a device which is typically part of the integrated drive circuit with which the first LED ( LED1 ) is controlled via the proposed H-bridge (H). As a voltage converter, English voltage converter, several different electrical circuits are summarized, which increase electrical voltages in the amount of the voltage value or reverse direct voltages in the polarity. In the sense of this disclosure, it is about a further lowering of the negative supply potential ( GND ) or to further increase the positive supply voltage ( VCC ). The output voltage of a voltage converter is typically a DC voltage. If the input voltage is also a DC voltage, the voltage converter counts among the DC-DC converters (English DCDC converter). A DC-DC converter refers to an electrical circuit which converts a DC voltage supplied to the input into a DC voltage with a higher, lower or inverted voltage level. The implementation is typically carried out by means of a periodically operating electronic switch and one or more energy storage. DC-DC converters are among the self-commutated power converters. In the field of electrical power engineering, they are also referred to as DC choppers. The energy storage used for buffering the energy is preferably an inductance (inductive converter) in the sense of this disclosure. Such a DC-DC converter therefore preferably also comprises a coil or a transformer transformer. In contrast to the capacity of a charge pump, these are difficult to integrate into an integrated circuit, which is why in this disclosure the charge pumps are treated in a focused manner. In contrast, transducers with capacitive storage (capacitive transducer) are referred to as charge pumps. Charge pumps are used when either - as in integrated circuits - inductors are not available, or when so little output power is required that the use of expensive coils is not worth it compared to cheap capacitors. If the first LED ( LED1 ) is only pulsed, no continuous operation is required and an external storage capacity can be charged between the light pulses to be emitted by the respective charge pump. Instead of the voltage transformers, charge pumps can also be used according to this disclosure. Preferably, voltage converters provide the electrical energy for illumination purposes with a lower voltage converter output voltage to the H-bridge and thus to the light source ( LED1 ) as the energy delivered by the charge pumps, which in comparison produce a preferably higher voltage difference between the lamp terminals during pulsed operation (GPB) for a very short time. As a result, neither in Quasidauerbetrieb still in pulsed operation, the light source ( LED1 ) energetically overloaded. This energy supply takes place in quasi-continuous operation ( QDB ) for a long time from the voltage transformers with lower electrical power and from the charge pumps in pulsed mode (GPB) for a short time with very high electrical power. Since the time of use of the charge pump output is short, the energy content of the energy storage of the charge pumps may be limited.
• Wavelength below the wavelength of an LED is in the sense of this disclosure the wavelength of the unmodulated light of the LED ( LED1 ) or the lighting means understood. Is of a wavelength of a bulb, so is the focus wavelength of the radiation of the respective bulb ( LED1 ) meant.
• RGB LED An RGB LED is a group of at least three LEDs of different colors. (see also definition LED above)
• ADAS ADAS stands for Advanced Driver Assistance Systems, which can be translated as driver assistance system. Driver assistance systems are electronic auxiliary devices in motor vehicles to assist the driver in certain driving situations. Here are often safety aspects, but also the increase in ride comfort in the foreground. Another aspect is the improvement of the economy. In this disclosure, the use of the described circuitry to drive the light emitting diodes of already existing bulbs makes it possible to use them in connection with ADAS systems, e.g. to be used as a distance sensor or as a source of an environment map.
• IR light IR light means infrared light. As such infrared radiation (IR radiation for short, also ultra-infrared radiation) is called in physics electromagnetic waves in the spectral range between visible light and the long-wave terahertz radiation. Infrared is the spectral range between 10 ^-3 m and 7.8 × 10 ^-7 m (1 mm and 780 nm), which corresponds to a frequency range of 3 × 10 ¹¹ Hz to approximately 4 × 10 14 Hz (FIG. 300 GHz to 400 THz).
• Visible light / visible wavelength range Visible light is the part of the electromagnetic radiation visible to the human eye. In the electromagnetic spectrum, the range of light includes wavelengths from 380 nm to 780 nm. This corresponds to frequencies from about 789 THz to 384 THz. An exact limit can not be specified because the sensitivity of the eye at the perceptual limits does not abruptly but gradually decreases. For the purposes of this disclosure, 380 nm to 780 nm are used as the wavelength range of visible light. The regions of infrared (wavelengths between 780 nm and 1 mm) and ultraviolet radiation (wavelengths between 10 nm and 380 nm) which are adjacent to the visible light are frequently also referred to as light. This disclosure relates to illuminants ( LED1 ), which preferentially emit white light. The bulbs ( LED1 ) can have laser properties.
• data link A data link is a data connection by means of a carrier made of electromagnetic radiation.
• headlights Under a headlight in the sense of this disclosure is any lamp with a light source to understand u.a. emits pulsed light. In particular, a headlight in the sense of this disclosure with respect to a motor vehicle is a headlight for daytime running lights, a headlight for low beam, a headlight for high beam, a decorative light, a turn signal, a warning light, a warning light for vehicles in the blind spot, a brake light, a Reversing lights, a tail light, a fog light, a fog tail lamp, a warning light, a signal light, in particular a police or fire or other emergency vehicle blue light or other yellow warning light with or without rotation and with or without flashing and related to a rail vehicle driving light , a decorative light, a warning light, a reversing light, a tail light, a warning light, a signal light. And related other lights and use situation a street lamp, an advertising installation, a searchlight, a stage light or a stage lights, a signal light, a traffic light, an emergency light, a workstation lamp, a room lamp, a gangway.
• vehicles Vehicles in the sense of this disclosure are all types of vehicles: motor vehicles, trucks, motorcycles, rail vehicles, bicycles, marine vehicles of all kinds such as ships, boats and submarines, aircraft, spacecraft, special vehicles such as tracks and construction vehicles, mobile robots , Industrial trucks, etc.
• White appearance of light
• For purposes of this disclosure, light output is white when the color temperature is between 3000K and 7000K.

measurement methods

Wavelength determination

The wavelength of a light emission can be determined via a grating spectrometer.

light pulse capable

Pulse-capable is a light source (eg LED1 ) within the meaning of this disclosure, when it receives light pulses ( LP ) of less than preferably less than 10μs, better shorter than 3μs, better shorter than 2μs, better shorter than 1μs, better shorter than 500ns, better shorter than 200ns, better shorter than 100ns, better shorter than 50ns, better shorter than 20ns , better shorter than 10ns, better shorter than 5ns, better shorter than 4ns, better shorter than 2ns, better shorter than 1ns, better shorter than 500ps, better shorter than 200ps, better shorter than 100ps, better shorter than 50ps, better shorter than 20ps , better shorter than 10ps, better shorter than 5ps, better shorter than 2ps, better shorter than 1ps, with an amplitude change in luminous efficiency of at least 1%, better of at least 2%, better of at least 5%, better of at least 10%, better of at least 20%, better of at least 50%, better of at least 100%, better of at least 200%, better of at least 500%, better of at least 1000%. A device in the sense of this disclosure is kurzlichtpulsfähig because it can produce light pulses shorter than 5ns. The duration of the light pulse is in this case as a time difference between a first time at which the amplitude change 10% of the maximum luminance amplitude change during the light pulse ( LP ), until a second time at which the amplitude change back to 10% of the maximum illuminant amplitude change during the light pulse ( LP ) has fallen off.

light pulse

A light pulse is an emission of visible light from a first light output, the light emission to a second light output at a first time ( t1 ) is increased or decreased and at a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first light output. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns. The duration of the light pulse is in this case as a time difference between a first time at which the amplitude change 10% of the maximum luminance amplitude change during the light pulse ( LP ), until a second time at which the amplitude change back to 10% of the maximum illuminant amplitude change during the light pulse ( LP ) has fallen off.

Color angle light pulse

A color angle light pulse is a visible light emission wherein the average color temperature from a first color temperature is the light output to a second color temperature at a first time (FIG. t1 ) is increased or decreased and at a second, the first time ( t1 ) subsequent date ( t2 ) returns to the first color temperature. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

modulated color angle light pulse

A color angle light pulse is a visible light emission wherein the average color temperature from a first color temperature is the light output to a second color temperature at a first time (FIG. t1 ) is increased or decreased and at a second, the first time ( t1 ) subsequent date ( t2 ) to the first color temperature, the average light output from a first light output returns the light output to a second light output at the first time (FIG. t1 ) is increased or decreased, and at the second time ( t2 ) returns to the first light output. The time difference between the second time ( t2 ) minus the first time ( t1 ) is preferably less than 10μs, better less than 3μs, better less than 2μs, better less than 1μs, better less than 500ns, better less than 200ns, better smaller than 100ns, better smaller than 50ns, better smaller than 20ns, better smaller than 10ns, better less than 5ns, better less than 4ns.

LIST OF REFERENCE NUMBERS

1

first terminal of the first transistor (T1) of the first half-bridge (HB1) of the first H-bridge (H);

2

second terminal of the first transistor (T1) of the first half-bridge (HB1) of the first H-bridge (H);

2 '

second terminal of the first transistor (T1 ') of the first half-bridge (HB2) of the second H-bridge (H');

2 ''

second terminal of the first transistor (T1 '') of the first half-bridge (HB1) of the third H-bridge (H '');

3

third connection of the second transistor (T2) of the first half-bridge (HB1) of the first H-bridge (H);

3 '

third connection of the second transistor (T2 ') of the first half-bridge (HB1) of the second H-bridge (H');

3 ''

third connection of the second transistor (T2 '') of the first half-bridge (HB1) of the third H-bridge (H '');

4

fourth terminal of the second transistor (T2) of the second half-bridge (HB2) of the first H-bridge (H);

5

fifth connection of the third transistor (T3) of the second half-bridge (HB2) of the first H-bridge (H);

6

sixth terminal of the third transistor (T3) of the second half-bridge (HB2) of the first H-bridge (H);

6 '

sixth terminal of the third transistor (T3 ') of the second half-bridge (HB2) of the second H-bridge (H');

6 ''

sixth terminal of the third transistor (T3) of the second half-bridge (HB2) of the third H-bridge (H '');

7

seventh connection of the fourth transistor (T4) of the second half-bridge (HB2) of the first H-bridge (H);

7 '

seventh connection of the fourth transistor (T4 ') of the second half-bridge (HB2) of the second H-bridge (H');

7 "

seventh terminal of the fourth transistor (T4 '') of the second half-bridge (HB2) of the third H-bridge (H '');

8th

eighth terminal of the fourth transistor (T4) of the second half-bridge (HB2) of the first H-bridge (H);

9

ninth connection of the positive charge pump (LPPB) for quick suction of the stored charge carriers or ninth connection of the positive voltage regulator (SVPB) for quick suction of the stored charge carriers, if instead of the positive charge pump (LPPB) for fast suction of the stored charge carriers such a positive voltage regulator (SVPB) is used for fast suction of the stored charge carriers, which is part of this disclosure;

10

Tenth connection of the positive charge pump (LPPB) for quick suction of the stored charge carriers or tenth connection of the positive voltage regulator (SVPB) for fast suction of the stored charge carriers, if instead of the positive charge pump (LPPB) for fast suction of the stored charge carriers such a positive voltage regulator (SVPB) is used for fast suction of the stored charge carriers, which is part of this disclosure;

11

11th connection of the negative charge pump (LPMB) for fast aspiration of the stored charge carriers or eleventh connection of the negative voltage regulator (SVMB) for rapid aspiration of the stored charge carriers, if instead of the negative charge pump (LPMB) for rapid aspiration of the stored charge carriers such negative voltage regulator (SVPB) is used for rapid aspiration of the stored charge carriers, which is part of this disclosure;

12

twelfth connection of the negative charge pump (LPMB) for quick suction of the stored charge carriers or twelfth connection of the negative voltage regulator (SVMB) for quick suction of the stored charge carriers, if instead of the negative charge pump (LPMB) for quick suction of the stored charge carriers, such a negative voltage regulator (SVMB) is used for fast suction of the stored charge carriers, which is part of this disclosure;

13

thirteenth connection of the positive charge pump (LPPA) for rapid activation or thirteenth connection of the positive voltage regulator (SVPA) for rapid activation, if instead of the positive charge pump (LPPA) for fast switching on such a positive voltage regulator (SVPA) is used for rapid switching on, which is part of this disclosure;

14

Fourteenth positive charge pump (LPPA) connection for fast turn-on or fourteen positive-voltage regulator connection (SVPA) for fast turn-on when such fast positive turn-on positive voltage regulator (SVPA) is used instead of the positive charge pump (LPPA) for fast turn-on, which is part of this disclosure;

15

fifteenth connection of the negative charge pump (LPMA) for fast switching on and fifteen connection of the negative voltage regulator (SVMA) for fast switching on, if instead of the negative charge pump (LPMA) for rapid switching on such a negative voltage regulator (SVMA) is used for rapid switching on, which is part of this disclosure;

16

sixteenth connection of the negative charge pump (LPMA) for fast switching on and sixteen connection of the negative voltage regulator (SVPMA) for fast switching on, if instead of the negative charge pump (LPMA) for rapid switching on such a negative voltage regulator (SVMA) is used for rapid switching on, which is part of this disclosure;

17

seventeenth terminal of the ninth transistor (T9) of the first half-bridge (HB1) of the first H-bridge (H);

18

eighteenth terminal of the ninth transistor (T9) of the first half-bridge (HB1) of the first H-bridge (H);

19

nineteenth terminal of the tenth transistor (T10) of the first half-bridge (HB1) of the first H-bridge (H);

20

twentieth terminal of the tenth transistor (T10) of the first half-bridge (HB1) of the first H-bridge (H);

21

twenty-first terminal of the twelfth transistor (T12) of the second half-bridge (HB2) of the first H-bridge (H);

22

Twenty-second terminal of the twelfth transistor (T12) of the second half-bridge (HB2) of the first H-bridge (H);

23

twenty-third terminal of the eleventh transistor (T11) of the second half-bridge (HB2) of the first H-bridge (H);

24

twenty-fourth terminal of the eleventh transistor (T11) of the second half-bridge (HB2) of the first H-bridge (H);

25

twenty-fifth terminal of the fifth transistor (T5) of the first half-bridge (HB1) of the first H-bridge (H);

26

twenty-sixth terminal of the fifth transistor (T5) of the first half-bridge (HB1) of the first H-bridge (H);

27

twenty-seventh terminal of the sixth transistor (T6) of the first half-bridge (HB1) of the first H-bridge (H);

28

twenty-eighth terminal of the sixth transistor (T6) of the first half-bridge (HB1) of the first H-bridge (H);

29

twenty-ninth terminal of the eighth transistor (T8) of the second half-bridge (HB2) of the first H-bridge (H);

30

thirtieth terminal of the eighth transistor (T8) of the second half-bridge (HB2) of the first H-bridge (H);

31

thirty-first terminal of the seventh transistor (T7) second half-bridge (HB2) of the first H-bridge (H);

32

thirty-second connection of the seventh transistor (T7) of the second half-bridge (HB2) of the first H-bridge (H);

a

Current profile during pulse generation with an H-bridge (operating voltage 40V);

A

Anode of the first light emitting diode (LED1);

aa

Anode of the first pulsed light emitting diode (LED1a);

From

Anode of the second pulsed light emitting diode (LED1b);

Ac

Anode of the third pulsed light emitting diode (LED1c);

AMP

Traffic light (representative of transport infrastructure or smart home devices);

AWB

radiated wavelength range;

b

Current profile during pulse generation with a voltage driver (operating voltage 3.3V);

BAn

On state in quasi continuous operation (QDB) in which the first LED (LED1) is electrically energized in the flow direction and emits light;

BFrom

Off state in quasi continuous operation (QDB) in which the first LED (LED1) is electrically biased in the reverse direction;

BL

Cover;

BRL1

Brake light left;

BRL2

Brake light right;

c

Current profile during pulse generation with a current driver (operating current 20mA);

C_LPMA

Energy reserve for the negative charge pump for generating a fast turn-on edge, typically a capacitor;

C_LPMB

Energy reserve for the negative charge pump for fast suction of the stored charge carriers, typically a capacitor;

C_LPPA

Energy reserve for the positive charge pump for generating a fast turn-on edge, typically a capacitor;

C_LPPB

Energy reserve for the positive charge pump for fast suction of the stored charge carriers, typically a capacitor;

clk1

Basic time signal (typically = base clock) of the computer system (μC);

clk2

Basic time signal (typically = base clock) of the control device (ST);

clk3

Base time signal (typically = base clock) of the H-bridge (H), preferably the charge pump in the H-bridge;

CL

Condenser optic or condenser lens;

BL1

Direction indicator on the left;

BL2

Turn signal on the right;

BLL1

Signal light on the left;

BLL2

Signal light on the right;

.delta.t

Delay Time;

d

measured distance;

d1

first distance that was measured;

d2

second distance that was measured;

d3

third distance that was measured;

DB

Data bus (e.g., CAN bus or LIN bus, etc.);

DLP

Micromirror array for the structured deflection of the light beam.

F1

first optical filter;

F2

second optical filter;

F3

third optical filter;

FAS1

Headlight for low beam, left;

FAS2

Headlight for dipped beam, right;

Department

Roadway;

FLP

Color angle light pulse;

FLPF

Color angle light pulse sequence;

FSF1

Headlight for main beam left;

FSF2

Headlight for high beam right;

FST1

Headlight for daytime running light left;

FST2

Headlight for daytime running lights right;

G1

first control terminal of the first transistor (T1) of the first H-bridge (H);

G1 '

first control terminal of the first transistor (T1 ') of the second H-bridge (H');

G1 ''

first control terminal of the first transistor (T1 '') of the third H-bridge (H '');

G2

second control terminal of the second transistor (T2) of the first H-bridge (H);

G2 '

second control terminal of the second transistor (T2 ') of the second H-bridge (H');

G2 ''

second control terminal of the second transistor (T2 '') of the third H-bridge (H '');

G3

third control terminal of the third transistor (T3) of the first H-bridge (H);

G3 '

third control terminal of the third transistor (T3 ') of the second H-bridge (H');

G3 ''

third control terminal of the third transistor (T3 '') of the third H-bridge (H '');

G4

fourth control terminal of the fourth transistor (T4) of the first H-bridge (H);

G4 '

fourth control terminal of the fourth transistor (T4 ') of the second H-bridge (H');

G4 ''

fourth control terminal of the fourth transistor (T4 '') of the third H-bridge (H '');

G5

fifth control terminal of the fifth transistor (T5) of the first H-bridge (H);

G6

sixth control terminal of the sixth transistor (T6) of the first H-bridge (H);

G7

seventh control terminal of the seventh transistor (T7) of the first H-bridge (H);

G8

eighth control terminal of the eighth transistor (T8) of the first H-bridge (H);

G9

ninth control terminal of the ninth transistor (T9) of the first H-bridge (H);

G10

tenth control terminal of the tenth transistor (T10) of the first H-bridge (H);

G11

eleventh control terminal of the eleventh transistor (T11) of the first H-bridge (H);

G12

Twelfth control terminal of the twelfth transistor (T12) of the first H-bridge (H);

GBP

pulsed operation of the H-bridge (H);

GND

negative total supply voltage or ground. Typically, this is also the reference potential;

GND1

first negative supply voltage, for example in the first H-bridge (H);

GND1 '

first negative supply voltage, for example in the second H-bridge (H ');

GND1 ''

first negative supply voltage, for example in the third H-bridge (H '');

GND2

second negative supply voltage, for example in the first H-bridge (H);

GND2 '

second negative supply voltage, for example in the second H-bridge (H ');

GND2 ''

second negative supply voltage, for example in the third H-bridge (H '');

GWB

locked wavelength range;

H

first H-bridge corresponding in its basic construction one of 1 to 8th . 12 . 13 . 16 to 21 and 23 , In this sense, the H-bridge does not include the first pulsed LED (LED1, LED1a). It does not encompass the control device (ST) and the voltage regulators (SR1, SR2) in the sense of this disclosure. It therefore has the terminals 6 and 7 for the anode terminal A of the relevant LED, here the first LED (LED1), and the terminals 2 and 3 for the cathode terminal K of the relevant LED, here the first LED (LED1), and the connections for the control electrodes (G1, G2, G3, G4) of the four transistors (T1, T2, T3, T4) of the H-bridge and in the simplest case, a ground connection (GND) and a supply voltage connection (VCC). The first H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (T3, T4). In an extreme case, the first half-bridge (HB1: T1, T2) is supplied with electrical energy by a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In the extreme case, the second half-bridge (HB2: T2, T4) is supplied with electrical energy by a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the energy reserves (C_LPPB, C_LPPA, C_LPMA, C_LPMB) of the optional charge pumps (LPPB, LPPA, LPMA, LPMB) may be connected to the charge pumps that are part of the H-bridge in the sense of this disclosure. Instead of the charge pumps (LPPB '', LPPA '', LPMA '', LPMB ''), voltage converters (SVPB '', SVPA '', SVMA '', SVMB '') can also be used if required;

H'

second H-bridge according to its basic construction one of 1 to 8th , The second H-bridge in this sense does not include the second pulsed LED (LED1b). It does not encompass the control device (ST) and the voltage regulators (SR1, SR2) in the sense of this disclosure. It therefore has the terminals 6 'and 7' for the anode terminal A 'of the second pulsed LED (LED1b), and the terminals 2' and 3 'for the cathode terminal K' second pulsed LED (LED1b), and the terminals for the control electrodes ( G1 ', G2', G3 ', G4') of the four transistors (T1 ', T2', T3 ', T4') of the second H-bridge and in the simplest case a ground terminal (GND) and a supply voltage terminal (VCC). The second H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4). In an extreme case, the first half-bridge (HB1: T1, T2) is supplied with electrical energy by a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In the extreme case, the second half-bridge (HB2: T2, T4) is supplied with electrical energy by a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the typically H-bond specific energy reserves (C_LPPB ', C_LPPA', C_LPMA ', C_LPMB') of the typically H-bridge specific optional charge pumps (LPPB ', LPPA', LPMA ', LPMB') of the second H-bridge to the charge pumps (LPPB ', LPPA', LPMA ', LPMB') of the second H-bridge, which may be part of the second H-bridge in the sense of this disclosure. Instead of the charge pumps (LPPB '', LPPA '', LPMA '', LPMB ''), voltage converters (SVPB '', SVPA '', SVMA '', SVMB '') can also be used if required. The second H-bridge usually corresponds in structure to the first H-bridge (H);

H''

third H-bridge corresponding in its basic construction one of 1 to 8th , The third H-bridge in this sense does not include the third pulsed LED (LED1c). It does not encompass the control device (ST) and the voltage regulators (SR1, SR2) in the sense of this disclosure. It therefore has the terminals 6 '' and 7 '' for the anode terminal A '' of the third pulsed LED (LED1c), and the terminals 2 '' and 3 '' for the cathode terminal K '' third pulsed LED (LED1c), and the connections for the control electrodes (G1 '', G2 '', G3 '', G4 '') of the four transistors (T1 '', T2 '', T3 '', T4 '') of the third H-bridge and in the simplest Case a ground connection (GND) and a supply voltage connection (VCC). The third H-bridge preferably consists of a first half-bridge (HB1: T1, T2) and a second half-bridge (HB2: T3, T4). In an extreme case, the first half-bridge (HB1: T1, T2) is supplied with electrical energy by a first positive supply voltage (VCC1) and a first negative supply voltage (GND1). In the extreme case, the second half-bridge (HB2: T2, T4) is supplied with electrical energy by a second positive supply voltage (VCC2) and a second negative supply voltage (GND2). In addition, the typically H-bonds specific energy reserves (C_LPPB '', C_LPPA '', C_LPMA '', C_LPMB '') of the also typically H-bridge specific optional charge pumps (LPPB '', LPPA '', LPMA '', LPMB '') of the second H-bridge to the charge pumps (LPPB '', LPPA '', LPMA '', LPMB '') of the third H-bridge, which are part of the third H-bridge in the sense of this disclosure. Instead of the charge pumps (LPPB '', LPPA '', LPMA '', LPMB ''), voltage converters (SVPB '', SVPA '', SVMA '', SVMB '') can also be used if required. The third H-bridge usually corresponds in structure to the first H-bridge (H);

HB1

first half-bridge of the H-bridge comprising the series connection of the first transistor (T1) and the second transistor (T2);

HB2

second half-bridge of the H-bridge comprising the series connection of the third transistor (T3) and the fourth transistor (T4);

HC1

first H-bridge control unit;

HC2

second H-bridge control unit;

HCV

H-bridge control instrument for measuring the voltage drop across the load in the H-bridge, ie typically via the first light-emitting diode (LED1);

HCI1

H-bridge control instrument for measuring the current through the first switching element of the H-bridge, that is typically by the first transistor (T1), here by detecting the voltage drop across the first transistor (T1);

HCI2

H-bridge control instrument for measuring the current through the second switching element of the H-bridge, that is typically by the second transistor (T2), here by detecting the voltage drop across the second transistor (T2);

HCI3

H-bridge control instrument for measuring the current through the third switching element of the H-bridge, ie typically through the third transistor (T3), here by detecting the voltage drop across the third transistor (T3);

HCI4

H-bridge control instrument for measuring the current through the fourth switching element of the H-bridge, thus typically through the fourth transistor (T4), here by detecting the voltage drop across the fourth transistor (T4);

IB

internal bus of the headlamp (SW);

I _LED

electric current through the first LED (LED1).

K

Cathode of the first light emitting diode (LED1);

k

optional short-circuit condition in which the first LED (LED1) is short-circuited via a supply voltage;

ka

Cathode of the first pulsed light emitting diode (LED1a);

kb

Cathode of the second pulsed light emitting diode (LED1b);

kc

Cathode of the third pulsed light emitting diode (LED1c);

automotive

Motor vehicle;

Kfz1

first motor vehicle;

Kfz2

second motor vehicle;

L_SVMA

Energy reserve for the negative Voltage transformer (SVMA) for generating a fast turn-on edge, typically an inductance. This energy reserve is typically used in conjunction with a freewheeling diode when, instead of a negative charge pump (LPMA) for generating a fast turn-on edge, a negative voltage converter (SVMA) is used to generate a fast turn-on edge. This energy reserve is not shown in any of the drawings, but part of the disclosure .;

L_SVMB

Energy reserve for the negative voltage converter (SVMB) for fast extraction of the stored charge carriers, typically an inductance. This energy reserve is typically used together with a free-wheeling diode, if instead of a negative charge pump (LPMB) for rapid suction of the stored charge carriers, a negative voltage converter (SVMB) is used for rapid suction of the stored charge carriers. This energy reserve is not shown in any of the drawings, but part of the disclosure;

L_SVPA

Energy reserve for the positive voltage converter (SVPA) for generating a fast turn-on, typically an inductance. This energy reserve is typically used in conjunction with a flywheel diode when a positive voltage converter (SVPA) is used to generate a fast turn-on edge rather than a positive charge pump (LPPA) to generate a fast turn-on edge. This energy reserve is not shown in any of the drawings, but part of the disclosure;

L_SVPB

Energy reserve for the positive voltage transformer (SVPB) for fast extraction of the stored charge carriers, typically an inductance. This energy reserve is typically used together with a free-wheeling diode, if instead of a positive charge pump (LPPB) for rapid suction of the stored charge carriers, a positive voltage converter (SVPB) is used for rapid suction of the stored charge carriers. This energy reserve is not shown in any of the drawings, but part of the disclosure;

LCD

structurable diaphragm, preferably an LCD operated aperture or a transparent LCD display for light transmission;

LCD_CS

Control signal preferably of the computer system (μC) for controlling the patterned aperture, e.g. that of a transparent LCD screen (LCD Diascope);

LED1

first light-emitting diode;

LED1a

first pulsed light emitting diode;

LED1b

second pulsed light emitting diode;

LED2..n

other, non-pulsed LEDs or bulbs;

LPMA

negative charge pump for generating a fast turn-on edge in the first H-bridge (H);

LPMA '

negative charge pump for generating a fast turn-on edge in the second H-bridge (H ');

LPMA ''

negative charge pump for generating a fast turn-on edge in the third H-bridge (H '');

LPMB

negative charge pump for quickly exhausting the stored charge carriers in the first H-bridge (H);

LPMB '

negative charge pump for quickly exhausting the stored charge carriers in the second H-bridge (H ');

LPMB ''

negative charge pump for quickly exhausting the stored charge carriers in the third H-bridge (H '');

LPPA

positive charge pump for generating a fast turn-on edge in the first H-bridge (H);

LPPA '

positive charge pump for generating a fast turn-on edge in the second H-bridge (H ');

LPPA "

positive charge pump for generating a fast turn-on edge in the third H-bridge (H '');

LppB

positive charge pump for quickly exhausting the stored charge carriers in the first H-bridge (H);

LppB '

positive charge pump for quickly exhausting the stored charge carriers in the second H-bridge (H ');

LppB "

positive charge pump for quickly exhausting the stored charge carriers in the third H-bridge (H '');

LP

Light pulse;

LPF

Light pulse sequence;

LPWB

light-pulsable wavelength range;

.mu.C

Computer system;

MD

photosensitive measuring diode;

MS1

first measurement signal;

MS2

second measurement signal;

MS2

third measurement signal;

MV

Measuring device;

NGWB

not locked wavelength range. The unlocked wavelength range includes the radiated wavelength range (AWB) without the locked wavelength range (GWB);

NL1

Fog lamp left;

NL2

Fog light on the right;

NRL1

Fog tail light left;

NRL2

Fog tail light right;

operating room

Optics or optical system;

OP2

additional optics or further optical system;

OP3

additional optics or further optical system;

PAn

On-state in pulsed mode (GPB);

Pout

Off state in pulsed mode (GPB) in which the LED emits no light and in which the charge carriers are actively removed from the LED;

PD1

first photodiode;

PD2

second photodiode;

PL

Projection optics or projection lens;

PQZ

Intermediate state in pulsed mode (GPB) in which, by the temporal shortness of the stay in this intermediate state, a cross-flow in the H-bridge in the subsequent "PAus" state for faster clearing of the charge carriers controlled by allowing the residence time .DELTA.t shorter in this state is the time from the beginning of the intermediate state to the switch-off time of those transistors which were conducting in the "PAn" state. The turn-off time of those transistors which were conducting in the "PAn" state can be suitably selected. Δt can be negative or negative if the current through the H-bridge is limited.

PZ

Intermediate state of pulsed operation;

QDB

Quasi-continuous operation of the H-bridge. This is the mode of operation in which typically the first LED (LED1) is used as the illuminant of a lighting device.

RF

Reflector, preferably a mirror optics;

RF2

another reflector, preferably a further mirror optics;

RFL1

Reversing light left;

RFL2

Reversing light right;

RL1

Tail light left;

RL2

Tail light on the right;

Rs1

first shunt resistance;

Rs2

second shunt resistor;

SCHW

threshold;

SL

Scattered light;

SL1

Scattered light of the first pulsed light emitting diode (LED1a);

SL2

Stray light of the second pulsed light emitting diode (LED1b);

SR1

first voltage regulator that generates from the total positive supply voltage (VCC) and the total negative supply voltage (GND) the first positive supply voltage (VCC1) and the first negative supply voltage (GND1);

SR2

second voltage regulator that generates the second positive supply voltage (VCC2) and the second negative supply voltage (GND2) from the total positive supply voltage (VCC) and the negative total supply voltage (GND);

SR3

third voltage regulator which generates from the total positive supply voltage (VCC) and the total negative supply voltage (GND) the third positive supply voltage (VCC3) and the third negative supply voltage (GND3);

SR4

fourth voltage regulator that generates the fourth positive supply voltage (VCC4) and the fourth negative supply voltage (GND4) from the total positive supply voltage (VCC) and the total negative supply voltage (GND);

SR5

fifth voltage regulator, which generates from the positive total supply voltage (VCC) and the negative total supply voltage (GND) the fifth positive supply voltage (VCC5) and the fifth negative supply voltage (GND5);

SR6

sixth voltage regulator that generates from the total positive supply voltage (VCC) and the total negative supply voltage (GND) the sixth positive supply voltage (VCC6) and the sixth negative supply voltage (GND4);

ST

Control means;

SVMA

negative voltage converter for generating a fast turn-on edge in the first H-bridge (H). The negative voltage converter for generating a fast turn-on edge in the first H-bridge (H) may be substituted for the negative charge pump (LPMA) to generate a fast turn-on edge in the first H-bridge (H), in particular in the figures. The negative voltage converter for generating a fast turn-on edge in the first H-bridge (H) preferably, but not necessarily, generates an output voltage (GND1) over one Reference potential (GND), which is lower than the most negative of its supply voltages compared to this reference potential (GND);

SVMA '

negative voltage converter for generating a fast turn-on edge in the second H-bridge (H '). The negative voltage converter for generating a fast turn-on edge in the second H-bridge (H ') may be substituted for the negative charge pump (LPMA') to produce a fast turn-on edge in the second H-bridge (H '), in particular in the figures become. The negative voltage converter for generating a fast turn-on edge in the second H-bridge (H ') preferably but not necessarily generates an output voltage (GND1') from a reference potential (GND) which is lower than the most negative of its supply voltages from this reference potential (GND );

SVMA ''

negative voltage converter for generating a fast turn-on edge in the third H-bridge (H ''). The negative voltage converter for generating a fast turn-on edge in the third H-bridge (H ") can, instead of the negative charge pump (LPMA ''), generate a fast turn-on edge in the third H-bridge (H ''), in particular in the figures, The negative voltage converter for generating a fast turn-on edge in the third H-bridge (H '') preferably but not necessarily generates an output voltage (GND1 '') from a reference potential (GND) lower than the most negative one Supply voltages with respect to this reference potential (GND);

SVMB

negative voltage converter for fast extraction of the stored charge carriers in the first H-bridge (H). The negative voltage converter for fast suction of the stored charge carriers in the first H-bridge (H) may be substituted for the negative charge pump (LPMB) for fast suction of the stored charge carriers in the first H-bridge (H), in particular in the figures, as an alternative , The negative voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) preferably but not necessarily generates an output voltage (GND2) from a reference potential (GND) which is lower than the most negative of its supply voltages from this reference potential (GND). ;

SVMB '

negative voltage converter for fast suction of the stored charge carriers in the second H-bridge (H '). The negative voltage converter for quickly sucking off the stored charge carriers in the second H-bridge (H ') can, instead of the negative charge pump (LPMB'), be used to quickly extract the stored charge carriers in the second H-bridge (H '), in particular in the figures. be provided as a substitute. The negative voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H ') preferably but not necessarily generates an output voltage (GND2') from a reference potential (GND) which is lower than the most negative of its supply voltages compared to this reference potential (H '). GND);

SVMB ''

negative voltage converter for fast suction of the stored charge carriers in the third H-bridge (H ''). The negative voltage converter for fast suction of the stored charge carriers in the third H-bridge (H ''), instead of the negative charge pump (LPMB '') for fast suction of the stored charge carriers in the third H-bridge (H ''), in particular the figures, be provided as a substitute. The negative voltage converter for quickly exhausting the stored charge carriers in the second H-bridge (H '') preferably but not necessarily generates an output voltage (GND2 '') from a reference potential (GND) lower than the most negative of its supply voltages therefrom Reference potential (GND);

SVPA

positive voltage converter for generating a fast turn-on edge in the first H-bridge (H). The positive voltage converter for generating a fast turn-on edge in the first H-bridge (H) may be substituted for the positive charge pump (LPPA) to generate a fast turn-on edge in the first H-bridge (H), in particular in the figures. The positive voltage converter for generating a fast turn-on edge in the first H-bridge (H) preferably but not necessarily generates an output voltage (VCC2) from a reference potential (GND) higher than the most positive of its supply voltages from that reference potential (GND);

SVPA '

positive voltage converter for generating a fast turn-on edge in the second H-bridge (H '). The positive voltage converter for generating a fast turn-on edge in the second H-bridge (H ') may be substituted for the positive charge pump (LPPA') for generating a fast turn-on edge in the second H-bridge (H '), in particular in the figures become. The positive voltage converter for generating a fast turn-on edge in the second H-bridge (H ') preferably but not necessarily generates an output voltage (VCC2') from a reference potential (GND) higher than the most positive of its supply voltages from this reference potential (GND );

SVPA "

positive voltage converter for generating a fast turn-on edge in the third H-bridge (H ''). The positive voltage converter for generating a fast turn-on edge in the third H-bridge (H '') may be used instead of the positive charge pump (LPPA '') to generate a fast turn-on edge in the third H-bridge (H ''), particularly in FIGS , be provided as a substitute. The positive voltage converter for generating a fast turn-on edge in the third H-bridge (H '') preferably but not necessarily generates an output voltage (VCC2 '') from a reference potential (GND) higher than the most positive of its supply voltages from that reference potential (GND);

SVPB

positive voltage converter for fast extraction of the stored charge carriers in the first H-bridge (H). The positive voltage converter for quickly sucking off the stored charge carriers in the first H-bridge (H) may be provided instead of the positive charge pump (LPPB) for fast suction of the stored charge carriers in the first H-bridge (H), in particular in the figures , The positive voltage converter for quickly extracting the stored charge carriers in the first H-bridge (H) preferably but not necessarily generates an output voltage (VCC1) from a reference potential (GND) which is higher than the most positive of its supply voltages from this reference potential (GND). ;

SVPB '

positive voltage converter for quick suction of the stored charge carriers in the second H-bridge (H '). The positive voltage converter for quickly sucking off the stored charge carriers in the second H-bridge (H ') can, instead of the positive charge pump (LPPB'), be used to quickly extract the stored charge carriers in the second H-bridge (H '), in particular in the figures, be provided as a substitute. The positive voltage converter for quickly extracting the stored charge carriers in the second H-bridge (H ') preferably but not necessarily generates an output voltage (VCC1') from a reference potential (GND) which is higher than the most positive of its supply voltages compared to this reference potential (H). GND);

SVPB "

positive voltage converter for fast extraction of the stored charge carriers in the third H-bridge (H ''). The positive voltage converter for fast suction of the stored charge carriers in the third H-bridge (H ''), instead of the positive charge pump (LPPB '') for fast suction of the stored charge carriers in the third H-bridge (H ''), in particular the figures, be provided as a substitute. The positive voltage converter for quickly exhausting the stored charge carriers in the third H-bridge (H '') preferably but not necessarily generates an output voltage (VCC1 '') from a reference potential (GND) higher than the most positive of its supply voltages therefrom Reference potential (GND);

SW

headlights;

SW1

first headlight;

SW2

second headlight;

SW3

third headlight;

SWL

Headlight, which is typically not pulsed;

sync

Synchronization signals with which the control device transmits the transmission signal to the measuring device (MV), so that this comparison between the transmission signal and the received signal of the measuring diode (MD), for. by performing a correlation integral between the transmission signal and the received signal of the measuring diode (MD).

τ

Life of the charge carriers of the first light emitting diode (LED1);

τ _pn

Ausräumzeit. In the sense of this disclosure, the clearing-out time is the time which, compared with the amount of the supply voltage, is increased in terms of amount in terms of the removal voltage (U _RM ) Reverse direction of the first light-emitting diode (LED1) is applied to this first light-emitting diode (LED1). According to this disclosure, the evacuation time is preferably dimensioned such that a residual charge remains in the first LED (LED 1) in order to reduce the service life no more than necessary. The evacuation time is therefore preferably shorter than the storage time of the charge carriers for this amount of increased evacuation voltage in the reverse direction of the first light-emitting diode (LED1). The clearing time (τ _pn ) is preferably less than 95% of the storage time (τ _sp1 ), better less than 95% of the storage time (τ _sp1 )), better less than 90% of the storage time (τ _sp1 ), better less than 85% the storage time (τ _sp1 ), better less than 80% of the storage time (τ _sp1 ), better less than 75% of the storage time (τ _sp1 ). It is recommended to accurately measure and qualify the effect on the junction and lifetime of the first LED (LED1), and suitably adjust the purging time (τ _pn ) and the purging voltage (U _RM ) according to the results. As a rule, these data are not available in the data sheets of the LEDs.

τ _pp

On-time. For the purpose of this disclosure, the switch-on time is the time which is applied to this first light-emitting diode (LED1) in the direction of flow of the first light-emitting diode (LED1) which is increased in absolute value relative to the magnitude of the supply voltage. The switch-on time is preferably dimensioned according to this disclosure so that the lamp energy output just reaches a predetermined maximum value. The evacuation time is therefore preferably shorter than the storage time of the charge carriers for this amount of increased evacuation voltage in the reverse direction of the first light-emitting diode (LED1). The turn-on time is preferably less than 95% of the storage time (τ _sp1 ), better less than 95% of the storage time (τ _sp1 ), better less than 90% of the storage time (τ _sp1 ), better less than 85% of the storage time (τ _sp1 ), better less than 80% of the storage time (τ _sp1 ), better less than 75% of the storage time (τ _sp1 ). As a result, the first light-emitting diode is not completely flooded with charge carriers. Rather, this results in a charge cloud which penetrates into the region of the other doping within the pn junction. It is recommended to accurately measure and qualify the effect on the junction and lifetime of the first LED (LED1) and adjust the on-time (τ _pp ) and forward voltage (U _DR ) appropriately according to the results. As a rule, these data are not available in the data sheets of the LEDs.

τ _SP0

Storage time of the charge carriers in the first light-emitting diode (LED1) when operating with supply voltage and use of the supply voltage as clearing voltage in reverse direction of the first light-emitting diode (LED1).

τ _SP1

Storage time of the charge carriers in the first light-emitting diode (LED1) when operating with an increased voltage compared to the supply voltage as operating voltage in pulsed operation in the flow direction of the first light emitting diode (LED1) and using a relative to the amount of the supply voltage amount increased Ausräumspannung in the reverse direction of the first light emitting diode (LED1) ,

t

Time;

t ₀

first time;

t ₁

second time;

T1

first transistor or first controllable switch, which is controllable by its first control terminal (G1);

T1 '

first transistor of the second H-bridge (H ') or first controllable switch of the second H-bridge (H') controllable by its first control terminal (G1 ');

T1 ''

first transistor of the third H-bridge (H '') or first controllable switch of the third H-bridge (H '') controllable by its first control terminal (G1 '');

T2

second transistor or second controllable switch, which is controllable by its second control terminal (G2);

T2 '

second transistor of the second H-bridge (H ') or second controllable switch of the second H-bridge (H'), which is controllable by its second control terminal (G2 ');

T2 ''

second transistor of the third H-bridge (H '') or second controllable switch of the third H-bridge (H ''), which is controllable by its second control terminal (G2 '');

T3

third transistor or third controllable switch, by its third control terminal (G3) is controllable;

T3 '

third transistor of the second H-bridge (H ') or third controllable switch of the second H-bridge (H') controllable by its third control terminal (G3 ');

T3 ''

third transistor of the third H-bridge (H '') or third controllable switch of the third H-bridge (H '') controllable by its third control terminal (G3 '');

T4

fourth transistor or fourth controllable switch controllable by its fourth control terminal (G4);

T4 '

fourth transistor of the second H-bridge (H ') or fourth controllable switch of the second H-bridge (H') controllable by its fourth control terminal (G4 ');

T4 '

fourth transistor of the third H-bridge (H '') or fourth controllable switch of the third H-bridge (H '') controllable by its fourth control terminal (G4 '');

T5

fifth transistor or fifth controllable switch controllable by its fifth control terminal (G5);

T6

sixth transistor or sixth controllable switch controllable by its sixth control terminal (G6);

T7

seventh transistor or seventh controllable switch controllable by its seventh control terminal (G7);

T8

eighth transistor or eighth controllable switch controllable by its eighth control terminal (G8);

T9

ninth transistor or ninth controllable switch controllable by its ninth control terminal (G9);

T10

tenth transistor or tenth controllable switch controllable by its tenth control terminal (G10);

T11

eleventh transistor or eleventh controllable switch controllable by its eleventh control terminal (G11);

T12

twelfth transistor or twelfth controllable switch controllable by its twelfth control terminal (G12);

TB

Time basis. The time base generates the base time signals of the device. This is preferably the base time signal (clk1) (typically = base clock) of the computer system (.mu.C) and the base time signal (clk2) (typically = base clock) of the controller (ST) and the base time signal (clk3) (typically = base clock) of H Bridge (H), preferably the charge pump in the H-bridge (H). These basic time signals (clk1, clk2, clk3) may depend on each other or be the same;

T _Pmin

Minimum residence time in the "PZ" state;

TOFIMG

two-dimensional arrangement of time-controllable photosensitive sensors.

TWL1

Warning light left for vehicles in the blind spot left;

TWL2

Right warning lamp for vehicles in the blind spot on the right;

U _DR

Forward voltage at the first light-emitting diode (LED1), which causes the first light-emitting diode (LED1) is flooded with charge carriers. Preferably, the amount of the forward voltage in the pulse mode is above the voltage amount of the voltage that is used in the lighting operation for driving the first light-emitting diode (LED1). The turn-on time (τ _pp ), for the course of which this forward voltage is applied to the first LED (LED1), is therefore such that it is preferably only a temporal fraction of the storage time (τ _sp1 ) for a reverse voltage equal voltage _magnitude as this forward voltage.

U _RM

Scavenging voltage or blocking voltage at the first light emitting diode (LED1), which causes the charge carriers, which are still within the first light emitting diode (LED1) are accelerated sucked. In the pulse mode, the amount of the reverse voltage is preferably above the voltage value of the voltage which is used in the lighting mode for driving the first light-emitting diode (LED1). Purging time (τ _pn ), this blocking voltage is applied to the first LED (LED1) is therefore such that it is preferably only a temporal fraction of the storage time (τ _sp1 ). The clearing time (τ _pn ) is preferably less than 95% of the storage time (τ _sp1 ), better less than 95% of the storage time (τ _sp1 )), better less than 90% of the storage time (τ _sp1 ), better less than 85% the storage time (τ _sp1 ), better less than 80% of the storage time (τ _sp1 ), better less than 75% of the storage time (τ _sp1 ). It is recommended to accurately measure and qualify the effect on the junction and lifetime of the first LED (LED1), and adjust the clearing time (τ _pn ) and clearing voltage appropriately according to the results.

VCC

positive total supply voltage;

VCC '

positive supply voltage between the quasi steady state operation (QDB) and the pulsed operation (GPB) in magnitude between a voltage value corresponding to a first supply voltage (VCC1) and a second voltage value corresponding to a third supply voltage (VCC3) is switched;

VCC1

first positive supply voltage, for example in the first H-bridge (H);

VCC1 '

first positive supply voltage, for example in the second H-bridge (H ');

VCC1 ''

first positive supply voltage, for example in the third H-bridge (H '');

VCC2

second positive supply voltage, for example in the first H-bridge (H);

VCC2 '

second positive supply voltage, for example in the second H-bridge (H ');

VCC2 ''

second positive supply voltage, for example in the third H-bridge (H '');

VCC3

third positive supply voltage;

VLED1

Bulb voltage via the first light-emitting diode (LED1) in the H-bridge (H);

VWB

Wavelength range used for the measurement (typically corresponds to the first wavelength range (WB1) emitted by the first LED (LED1))

WB1

first wavelength range;

WB2

second wavelength range;

WB3

third wavelength range;

Z

Intermediate state in which all four transistors (T1, T2, T3, T4) and possibly further transistors (for example T12) are switched off;

ZL1

Decorative lamp left;

ZL2

Decorative lamp right;

List of quoted writings

• CN 102 612 231 A .
• DE 197 04 496 A1 .
• DE 10 2006 041013 A1 .
• DE 10 2006 044 794 A1 .
• DE 10 2008 018 718 B4 .
• DE 10 2009 020 218 B3 .
• DE 10 2013 001 273 A1 .
• DE 10 2013 001 274 A1 .
• DE 10 2013 002 668 A1 .
• DE 20 2013 008 067 U1 .
• DE 10 2015 110 233 A1 .
• DE 10 2016 205 563 A1 .
• DE 10 2016 202 505 A1 .
• DE 20 2017 103 902 U1 .
• EP 2 160 629 B1 .
• EP 2 783 232 B1 .
• JP 2005 - 158 483 A .
• US 4,571,506 A .
• US Pat. No. 9,653,642 B1 .
• US 2016/0 257 306 A1 .
• WO 2014/124 768 A1 .

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2014/124768 A1 [0008, 0275]
• EP 2160629 B1 [0009, 0275]
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• DE 102008018718 B4 [0097, 0251, 0270, 0275]
• DE 102009020218 B3 [0097, 0251, 0270, 0275]

Claims (8)

Device for controlling at least one light emitting diode (LED1) by means of an H-bridge (H) for generating short light pulses (LP) - with a first transistor (T1) of the H-bridge (H), a first terminal (1) and a second Anchor (2) and a first control terminal (G1); - With a second transistor (T2) of the H-bridge (H) having a third terminal (3) and a fourth terminal (4) and a second control terminal (G2); - With a third transistor (T3) of the H-bridge (H) having a fifth terminal (5) and a sixth terminal (6) and a third control terminal (G3); - With a fourth transistor (T4) of the H-bridge (H) having a seventh terminal (7) and an eighth terminal (8) and a fourth control terminal (G4); - With a first light-emitting diode (LED1) with an anode (A) and with a cathode (K); - with a first positive supply voltage (VCC1); - having a second positive supply voltage (VCC2) which may be equal to the first positive supply voltage (VCC1); - with a first negative supply voltage (GND1); - With a second negative supply voltage (GND2), which may be equal to the first negative supply voltage (GND1); - wherein the first terminal (1) of the first transistor (T1) is connected to the first positive supply voltage (VCC1); - wherein the fifth terminal (5) of the third transistor (T3) is connected to the second positive supply voltage (VCC2); - Wherein the second terminal (2) of the first transistor (T1) is connected to the third terminal (3) of the second transistor (T2); - Wherein the sixth terminal (6) of the third transistor (T3) is connected to the seventh terminal (7) of the fourth transistor (T4); - Wherein the fourth terminal (4) of the second transistor (T2) is connected to the first negative supply voltage (GND1); - wherein the eighth terminal (8) of the fourth transistor (T4) is connected to the second negative supply voltage (GND2); - wherein the cathode (K) of the first light-emitting diode (LED1) with the second terminal (2) of the first transistor (T1) and the third terminal (3) of the second transistor (T2) is connected; - wherein the anode (A) of the first light emitting diode (LED1) to the sixth terminal (6) of the third transistor (T3) and the seventh terminal (7) of the fourth transistor (T4) is connected; - wherein the first transistor (T1) has a first operating state and a second operating state and - wherein in the first operating state of the first transistor (T1), the first terminal (1) of the first transistor (T1) to the second terminal (2) of the first Transistors (T1) is connected electrically lower impedance than in the second operating state; - wherein the second transistor (T2) has a first operating state and a second operating state and - wherein in the first operating state of the second transistor (T2) of the third terminal (3) of the second transistor (T2) with the fourth terminal (4) of the second Transistors (T2) is connected electrically lower impedance than in the second operating state; - wherein the third transistor (T3) has a first operating state and a second operating state and - wherein in the first operating state of the third transistor (T3) the fifth terminal (5) of the third transistor (T3) to the sixth terminal (6) of the third transistor (T3) is connected electrically lower impedance than in the second operating state; wherein the fourth transistor (T4) has a first operating state and a second operating state, and wherein in the first operating state of the fourth transistor (T4) the seventh connection (7) of the fourth transistor (T4) is connected to the eighth connection (8) of the fourth Transistor (T4) is connected electrically lower impedance than in the second operating state; - wherein the first transistor (T1) assumes the first operating state when its first control terminal (G1) is in a first logic state and assumes the second operating state when its first control terminal (G1) is in a second logic state; - wherein the second transistor (T2) assumes the first operating state when its second control terminal (G2) is in a first logic state and assumes the second operating state when its second control terminal (G2) is in a second logic state; - wherein the third transistor (T3) assumes the first operating state when its third control terminal (G3) is in a first logic state and assumes the second operating state when its third control terminal (G3) is in a second logic state; wherein the fourth transistor (T4) assumes the first operating state when its fourth control terminal (G4) is in a first logic state and assumes the second operating state when its fourth control terminal (G4) is in a second logic state; - wherein the device comprises a control device (ST) which controls the first control port (G1) and the second control port (G2) and the third control port (G3) and the fourth control port (G4); - Wherein the control terminals (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) may be in a first logic state or a second logic state - wherein the control device (ST) is designed so that the Control terminals (G1, G2, G3, G4) of the transistors (T1, T2, T3, T4) are either - in a first overall state, an intermediate state (PZ), in which the first control terminal (G1) is in the second operating state and the second control port (G2) is in the second operating state and the third control port (G3) is in the second operating state and the fourth control port (G4) is in the second operating state, or - in a second overall state, a "PAn" state , in which the first control connection (G1) is in the second operating state and the second control connection (G2) is in the first operating state and the third control connection (G3) is in the first operating state b eves and the fourth control port (G4) is in the second operating state, or - in a third overall state, a "PAus" state, in which the first control port (G1) is in the first operating state and the second control port (G2) is in the second operating state and the third control connection (G3) is in the second operating state and the fourth control connection (G4) is in the first operating state; - And wherein the control device (ST) is designed so that a change only from the first overall state, the intermediate state (PZ), in the second overall state, the "PAn" state, and vice versa, or from the first overall state, the intermediate state ( PZ), into the third overall state, the "PAus" state, and vice versa; - wherein the charge carriers in the first light-emitting diode (LED1) after a change from the second overall state, the "PAn" state, in the first overall state, the intermediate state (PZ), are degraded with a carrier lifetime (τ); - wherein the control device (ST) is adapted to the time after the first time (t ₀ ) of the change from the second overall state, the "PAn" state, in the first overall state, the intermediate state (PZ), a change from the first overall state , the intermediate state (PZ), the third overall state, the "PAus" state, after a delay time (Δt) which is smaller than the carrier lifetime (τ), and - wherein the control device (ST) is designed such that the second overall state, the "PAn" state, not longer than a turn-on time (τ _pp ) is taken and - wherein the control device (ST) is designed so that the third overall state, the "PAus" state, no longer than a clearing time (τ _pn ) is taken and wherein the clearing time (τ _pn ) is smaller than the carrier lifetime (τ) in the PN junction of the first light emitting diode (LED1) and - wherein the turn-on time (τ _pp ) is smaller than the carrier lifetimes r (τ) is in the PN junction of the first light-emitting diode (LED1). Device according to one or more of the preceding claims with at least one voltage transformer or at least one charge pump (LPPA, LPPB, LPMA, LPMB) • to generate the first positive supply voltage (VCC1) or • to generate the second positive supply voltage (VCC2) or • to generate the first negative supply voltage (GND1) or • to generate the second negative supply voltage (GND2). Device according to one or more of the preceding claims Wherein at least one of the transistors (T1, T2, T3, T4) is coupled to a temperature sensor, in particular a PN diode or a bipolar transistor as a temperature sensor. Sub-method for operating an H-bridge for emitting a light pulse (LP) by means of an H-bridge according to one or more of the preceding claims, wherein the H-bridge (H) comprises a first half-bridge (HB1: T1, T2) with at least the first transistor (T1) and at least the second transistor (T2), and - wherein the H-bridge (H) has a second half-bridge (HB2 : T3, T4) with at least the third transistor (T3) and at least the fourth transistor (T4) and comprising the steps - taking an intermediate state (PZ), in particular from a "PAus" state, wherein a first cross-flow with a first maximum cross current amount occurs in the first half-bridge (HB1: T1, T2) of the H-bridge, and wherein a second cross-current occurs at a second maximum cross-current amount in the second half-bridge (HB2: T3, T4) of the H-bridge, comprising Sub-steps • Blocking the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H) so that the first transistor (T1) is no longer electrically connected between the first positive supply voltage (VCC1) and the output of the first half-bridge (HB1) H-bridge (H) leads if this first transistor (T1) was previously electrically conductive between these terminals of the first transistor (T1); Locking of the second transistor (T2) of the first half-bridge (HB1) of the H-bridge (H), so that the second transistor (T2) no longer electrically between the first negative supply voltage (GND1) and the output of the first half-bridge (HB1) H-bridge (H) conducts, provided that this second transistor (T2) was previously electrically conductive between these terminals of the second transistor (T2); Lock the third transistor (T3) the second half-bridge (HB2) of the H-bridge (H), so that the third transistor (T3) no longer electrically conducts between the second positive supply voltage (VCC2) and the output of the second half-bridge (HB2) of the H-bridge (H), if this third transistor (T3) was previously electrically conductive between these terminals of the third transistor (T3); Locking of the fourth transistor (T4) of the second half-bridge (HB2) of the H-bridge (H), so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half-bridge (HB2) H-bridge (H) conducts, provided that fourth transistor (T4) was previously electrically conductive between these terminals of the fourth transistor (T4); Assuming a "PAn" state (PAn) by transition from the intermediate state (PZ), comprising the sub-steps of blocking the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H), so that the first transistor (P) T1) no longer electrically conducts between the first positive supply voltage (VCC1) and the output of the first half-bridge (HB1) of the H-bridge (H), provided that said first transistor (T1) is previously electrically conductive between these terminals of the first transistor (T1) was; Turning on the second transistor (T2) of the first half-bridge (HB1) of the H-bridge (H), so that the second transistor (T2) electrically between the first negative supply voltage (GND1) and the output of the first half-bridge (HB1) of the H Bridge (H) conducts, provided that this second transistor (T2) was previously between these terminals of the second transistor (T2) electrically blocking (= high impedance); Turning on the third transistor (T3) of the second half-bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is electrically connected between the second positive supply voltage (VCC2) and the output of the second half-bridge (HB2) of the H Bridge (H) conducts, provided that this third transistor (T3) was previously between these terminals of the third transistor (T3) electrically blocking (= high impedance); Blocking the fourth transistor (T4) of the second half-bridge (HB2) of the H-bridge (H) so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half-bridge (HB2) of the H -Brücke (H) conducts, provided that this fourth transistor (T4) was previously electrically conductive between these terminals of the fourth transistor (T4); Taking a "PQZ" state (PQZ) by transition from the "PAn" state, comprising the substeps, turning on the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H), so that the first Transistor (T1) electrically conducts between the first positive supply voltage (VCC1) and the output of the first half-bridge (HB1) of the H-bridge (H), provided that said first transistor (T1) previously electrically blocking between these terminals of the first transistor (T1) (= high impedance) was; Locking of the second transistor (T2) of the first half-bridge (HB1) of the H-bridge (H), so that the second transistor (T2) no longer electrically between the first negative supply voltage (GND1) and the output of the first half-bridge (HB1) H-bridge (H) conducts, provided that this second transistor (T2) was previously electrically conductive between these terminals of the second transistor (T2); Locking of the third transistor (T3) of the second half-bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is no longer electrically connected between the second positive supply voltage (VCC2) and the output of the second half-bridge (HB2) H-bridge (H) conducts, provided that this third transistor (T3) was previously electrically conductive between these terminals of the third transistor (T3); Turning on the fourth transistor (T4) of the second half-bridge (HB2) of the H-bridge (H) so that the fourth transistor (T4) is electrically connected between the second negative supply voltage (GND2) and the output of the second half-bridge (HB2) of the H-bridge (H). Bridge (H) conducts, provided this fourth transistor (T4) was previously electrically blocking (= high-resistance) between these terminals of the fourth transistor (T4); • leaving the "PQZ" state after a dwell time Δt; - Taking a "PAus" state (PAus) by transition from the "PQZ" state, • wherein a third cross-current with a third maximum cross-current amount in the first half-bridge (HB1: T1, T2) of the H-bridge occurs and • where a fourth cross-current with a fourth maximum cross-current amount occurs in the second half-bridge (HB2: T3, T4) of the H-bridge, comprising the sub-steps • blocking of the first transistor (T1) of the first half-bridge (HB1) of the H-bridge (H,) so that the first transistor (T1) no longer electrically conducts between the first positive supply voltage (VCC1) and the output of the first half-bridge (HB1) of the H-bridge (H), provided that this first transistor (T1) previously between these terminals of the first transistor (T1) was conductive; Locking of the second transistor (T2) of the first half-bridge (HB1) of the H-bridge (H), so that the second transistor (T2) no longer electrically between the second negative supply voltage (GND2) and the output of the first half-bridge (HB1) H-bridge (H) conducts, provided that this second transistor (T2) was previously electrically conductive between these terminals of the second transistor (T2); Locking of the third transistor (T3) of the second half-bridge (HB2) of the H-bridge (H), so that the third transistor (T3) is no longer electrically connected between the second positive supply voltage (VCC2) and the output of the second half-bridge (HB2) H-bridge (H) conducts, provided that this third transistor (T3) was previously electrically conductive between these terminals of the third transistor (T3); Locking of the fourth transistor (T4) of the second half-bridge (HB2) of the H-bridge (H), so that the fourth transistor (T4) is no longer electrically connected between the second negative supply voltage (GND2) and the output of the second half-bridge (HB2) H-bridge (H) conducts, provided that fourth transistor (T4) was previously electrically conductive between these terminals of the fourth transistor (T4). Wherein the "PZ" state differs from the "PQZ" state in that all the transistors (T3, T2) to be blocked upon leaving the "PZ" are different from the first maximum cross-current amount. Status while they may still be temporarily electrically conductive upon exiting the "PQZ" state. Method according to Claim 4 - Wherein the H-bridge a first operating state (GPB) for performing a partial method for emitting a light pulse (LP) according to Claim 3 and wherein the H-bridge can assume a second operating state (QDB) for carrying out a partial method for emitting light for illumination purposes, and - wherein the H-bridge comprises a further transistor (T12) which has at least one output of a second half-bridge ( HB2: T3, T4) may conductively connect to or disconnect from a third positive supply voltage (VCC3), and wherein - comprising the additional steps of • performing the partial process Claim 4 ■ if the H-bridge (H) is in the first operating state (GPB) and a light pulse (LP) is to be generated and ■ blocking the further transistor (T12) of the H-bridge (H) during the execution of the sub-process Claim 3 such that the further transistor (T12) no longer electrically conducts between the third positive supply voltage (VCC3) and the output of the second half-bridge (HB2) of the H-bridge (H), provided that this further transistor (T12) previously between these terminals Transistor (T12) was electrically conductive; • If the H-bridge (H) is in the second operating state (QDB) and light is to be generated for illumination purposes, carry out the following sub-process. ■ Switch on the further transistor (T12) of the H-bridge (H), so that the further transistor (Q) T12) electrically conducts between the third positive supply voltage (VCC3) and the output of the second half-bridge (HB2) of the H-bridge (H), provided that this further transistor (T12) previously between these terminals of the further transistor (T12) electrically blocking (= high impedance) was; Switching on a transistor (T2) of the H-bridge (H) so that the transistor (T2) is electrically connected between the negative supply voltage (GND) and the output of the first half-bridge (HB1: T1, T2) of the H-bridge (H), which is not the second half-bridge (HB2: T3, T4), conducts, provided that this transistor (T2) previously between these terminals of the transistor (T2) was electrically blocking (= high impedance). Method according to Claim 4 or 5 comprising the additional steps - Determining the third cross-flow amount and / or the fourth cross-flow amount as a control parameter, wherein the respective maximum cross-current amount and / or the time profile of the respective cross-current amount can be detected; - modify at least one of the following parameters of the sub-procedure Claim 3 depending on the control parameter: • Changing the dwell time Δt in the "PQZ"state; Changing the voltage amount of the voltage difference between the second positive supply voltage (VCC2) and the first negative supply voltage (GND1); Method according to Claim 4 to 6 comprising the additional steps - determining a temperature which depends on the temperature of at least one of the components (T1, T2, T3, T4) of the H-bridge (H) or the temperature of the light-emitting diode (LED1); - modify at least one of the following parameters of the sub-procedure Claim 3 depending on the control parameter: • Changing the dwell time Δt in the "PQZ"state; Changing the voltage amount of the voltage difference between the second positive supply voltage (VCC2) and the first negative supply voltage (GND1); Method according to Claim 6 or 7 wherein a control of the dwell time .DELTA.t in the "PQZ" state takes place in such a way that the dwell time .DELTA.t in the "PQZ" state is minimized until the occurrence of a crossflow with a maximum allowable cross flow amount - and the maximum cross flow amount for the duration of dwell in "PAus" state is maximized up to a maximum allowable cross current amount.

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