DE102018109974B3 - Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters - Google Patents

Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters Download PDF

Info

Publication number
DE102018109974B3
DE102018109974B3 DE102018109974.6A DE102018109974A DE102018109974B3 DE 102018109974 B3 DE102018109974 B3 DE 102018109974B3 DE 102018109974 A DE102018109974 A DE 102018109974A DE 102018109974 B3 DE102018109974 B3 DE 102018109974B3
Authority
DE
Germany
Prior art keywords
layer
resonator
layer stack
filter
resonators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102018109974.6A
Other languages
German (de)
English (en)
Inventor
Matthias Knapp
Franz Kubat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RF360 Singapore Pte Ltd
Original Assignee
RF360 Europe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RF360 Europe GmbH filed Critical RF360 Europe GmbH
Priority to DE102018109974.6A priority Critical patent/DE102018109974B3/de
Priority to EP19712759.0A priority patent/EP3785368A1/fr
Priority to PCT/EP2019/057085 priority patent/WO2019206533A1/fr
Priority to CN201980027686.4A priority patent/CN112042119A/zh
Application granted granted Critical
Publication of DE102018109974B3 publication Critical patent/DE102018109974B3/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0478—Resonance frequency in a process for mass production
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE102018109974.6A 2018-04-25 2018-04-25 Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters Active DE102018109974B3 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102018109974.6A DE102018109974B3 (de) 2018-04-25 2018-04-25 Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters
EP19712759.0A EP3785368A1 (fr) 2018-04-25 2019-03-21 Filtre électroacoustique, multiplexeur et procédé de fabrication de film électroacoustique
PCT/EP2019/057085 WO2019206533A1 (fr) 2018-04-25 2019-03-21 Filtre électroacoustique, multiplexeur et procédé de fabrication de film électroacoustique
CN201980027686.4A CN112042119A (zh) 2018-04-25 2019-03-21 电声滤波器、复用器和制造电声滤波器的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102018109974.6A DE102018109974B3 (de) 2018-04-25 2018-04-25 Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters

Publications (1)

Publication Number Publication Date
DE102018109974B3 true DE102018109974B3 (de) 2019-09-12

Family

ID=65895010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018109974.6A Active DE102018109974B3 (de) 2018-04-25 2018-04-25 Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters

Country Status (4)

Country Link
EP (1) EP3785368A1 (fr)
CN (1) CN112042119A (fr)
DE (1) DE102018109974B3 (fr)
WO (1) WO2019206533A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111917392A (zh) * 2020-04-14 2020-11-10 诺思(天津)微系统有限责任公司 压电滤波器及其带外抑制改善方法、多工器、通信设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022141392A1 (fr) * 2020-12-31 2022-07-07 华为技术有限公司 Filtre et procédé de préparation de filtre

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170359050A1 (en) 2016-06-10 2017-12-14 Taiyo Yuden Co., Ltd. Acoustic wave device
DE112016002829T5 (de) 2015-06-25 2018-03-08 Murata Manufacturing Co., Ltd. Multiplexer, Hochfrequenz-Frontend-Schaltkreis und Kommunikationsvorrichtung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3317274B2 (ja) * 1999-05-26 2002-08-26 株式会社村田製作所 弾性表面波装置及び弾性表面波装置の製造方法
US6518860B2 (en) * 2001-01-05 2003-02-11 Nokia Mobile Phones Ltd BAW filters having different center frequencies on a single substrate and a method for providing same
US6874211B2 (en) * 2001-03-05 2005-04-05 Agilent Technologies, Inc. Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method
FR2853473B1 (fr) * 2003-04-01 2005-07-01 St Microelectronics Sa Composant electronique comprenant un resonateur et procede de fabrication
US20060006965A1 (en) * 2004-07-06 2006-01-12 Matsushita Electric Industrial Co., Ltd. RF filter and method for fabricating the same
JP4917396B2 (ja) * 2006-09-25 2012-04-18 太陽誘電株式会社 フィルタおよび分波器
DE102008020783A1 (de) * 2008-04-25 2009-10-29 Epcos Ag Filterchip mit unterschiedlichen Leitschichten und Verfahren zur Herstellung
DE102010034121A1 (de) * 2010-08-12 2012-02-16 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement mit reduziertem Temperaturgang der Frequenzlage und Verfahren zur Herstellung
JP6497018B2 (ja) * 2014-09-30 2019-04-10 株式会社村田製作所 デュプレクサ及びその製造方法
KR102588798B1 (ko) * 2016-02-17 2023-10-13 삼성전기주식회사 음향파 필터 장치 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112016002829T5 (de) 2015-06-25 2018-03-08 Murata Manufacturing Co., Ltd. Multiplexer, Hochfrequenz-Frontend-Schaltkreis und Kommunikationsvorrichtung
US20170359050A1 (en) 2016-06-10 2017-12-14 Taiyo Yuden Co., Ltd. Acoustic wave device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111917392A (zh) * 2020-04-14 2020-11-10 诺思(天津)微系统有限责任公司 压电滤波器及其带外抑制改善方法、多工器、通信设备

Also Published As

Publication number Publication date
EP3785368A1 (fr) 2021-03-03
WO2019206533A1 (fr) 2019-10-31
CN112042119A (zh) 2020-12-04

Similar Documents

Publication Publication Date Title
US10541667B2 (en) Surface acoustic wave (SAW) resonator having trap-rich region
US7138889B2 (en) Single-port multi-resonator acoustic resonator device
KR101288190B1 (ko) Ｂａｗ 공진기 디바이스, 필터 및 전자 장치
US7868517B2 (en) Lamb wave resonator
DE112020003020T5 (de) Akustische wellenfilter mit geteilter leiter
DE112019005403T5 (de) Fest montierter transversal angeregter akustischer filmvolumenresonator
DE60115504T2 (de) Filtereinrichtung
US7439824B2 (en) Bulk acoustic wave filter and method for eliminating unwanted side passbands
US7728485B2 (en) Bulk acoustic wave device and a method of its manufacturing
DE102017108340B4 (de) Bulk-Akustik-Wave (BAW) Resonatorstruktur
CN102075161B (zh) 声波器件及其制作方法
DE102015117953A1 (de) Eine akustische Volumenwellen-Resonatoreinrichtung, die eine Temperaturkompensationsanordnung mit einer Schicht von niedriger akustischer Impedanz umfasst
US20010052739A1 (en) Bulk acoustic wave device
KR100708062B1 (ko) 탄성 표면파 장치, 통신기
DE102007007805A1 (de) Piezoelektrischer Dünnfilmresonator, Piezoelektrischer Dünnfilmresonatorfilter und Herstellungsverfahren für diese
CN108173528A (zh) 滤波器
JP2002198777A (ja) 圧電共振子を含むフィルタ構造および構成
WO2004109913A1 (fr) Element electroacoustique et procede de fabrication associe
KR20110133039A (ko) 경사 에지를 포함한 리액턴스 필터
DE102018109833A1 (de) SAW-Resonator, HF-Filter, Multiplexer und Verfahren zur Herstellung eines SAW-Resonators
CN113839643B (zh) 一种横向激发体声波谐振器和滤波器
DE102022100739A1 (de) Entkoppelte transversal angeregte akustische filmvolumenresonatoren
DE102018109974B3 (de) Elektroakustisches Filter, Multiplexer und Verfahren zur Herstellung eines elektroakustischen Filters
WO2022087825A1 (fr) Résonateur et son procédé de fabrication, filtre et dispositif électronique
DE102019107011A1 (de) 11-IDT-DMS-Filter, elektroakustisches Filter und Multiplexer

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R082 Change of representative

Representative=s name: BARDEHLE PAGENBERG PARTNERSCHAFT MBB PATENTANW, DE

R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: RF360 SINGAPORE PTE. LTD., SG

Free format text: FORMER OWNER: RF360 EUROPE GMBH, 81671 MUENCHEN, DE