DE102017115181B4 - Optoelectronic semiconductor component and manufacturing method for an optoelectronic semiconductor component - Google Patents

Abstract

Optoelectronic semiconductor component (1) with - an optoelectronic semiconductor chip (2) for generating primary radiation, - a potting body (3) for reflecting the primary radiation, - a phosphor body (4) for at least partially converting the primary radiation into a longer-wave secondary radiation, and - a mirror body (5) for reflecting the primary radiation and the secondary radiation, wherein- the potting body (3) at least predominantly covers side surfaces (21) of the semiconductor chip (2),- the phosphor body (4) completely covers a chip top side (23), and- the mirror body ( 5) a phosphor top side (40) of the phosphor body (4) that faces away from the semiconductor chip (2) and completely covers the semiconductor chip (2), - a potting top side (30) of the potting body (3) is only partially covered by the phosphor body (4), - A lateral overhang of the phosphor body (4) over the semiconductor chip (2) between 5% and 20% of a diagonal length of the half conductor chips (2) seen in plan view, - a lateral projection of the casting body (3) over the luminescent body (4) is at least 10% of the diagonal length, - the mirror body (5) protrudes laterally beyond the luminescent body (4) and/or the mirror body (5) has a smaller thickness in an edge area than in a central area, and the mirror body (5) is impermeable to the primary radiation and the secondary radiation.

Description

An optoelectronic semiconductor component is specified. In addition, a manufacturing method for such a semiconductor component is specified.

The publication US 2015/0 049 510 A1 relates to a radiation-emitting semiconductor component and a display with such a component.

The pamphlet DE 10 2012 102 114 A1 relates to a radiation-emitting semiconductor component with a volume-emitting semiconductor chip.

The pamphlet U.S. 8,080,828 B2 relates to a side-emitting LED that emits white light.

The pamphlet DE 10 2014 112 973 A1 relates to an optoelectronic component with a light source, which is followed by a lamina with a conversion layer and a color scattering layer.

The publication WO 2012/156 514 A1 describes an optoelectronic semiconductor chip with a luminescence conversion element, which has a first lamina and a second lamina.

The pamphlet DE 10 2015 121 074 A1 relates to a semiconductor component with a semiconductor chip, a conversion layer and a light guide layer, which guides radiation away from the semiconductor chip in a lateral direction.

One problem to be solved is to specify an optoelectronic semiconductor component that has a high lateral emission efficiency.

This object is achieved, inter alia, by an optoelectronic semiconductor component and by a production method having the features of the independent patent claims. Preferred developments are the subject matter of the dependent claims.

The semiconductor component includes one or more optoelectronic semiconductor chips. The at least one semiconductor chip is set up to generate primary radiation, in particular to generate visible light such as blue light. The semiconductor chip is preferably a light-emitting diode chip, or LED chip for short. For example, a wavelength of maximum intensity of the primary radiation is at least 380 nm or 420 nm and/or at most 520 nm or 470 nm.

The semiconductor component has a potting body. The potting body is set up to reflect the primary radiation. The potting body can be diffusely reflective or specularly reflective.

The potting body covers at least most of the side faces of the semiconductor chip. This means, for example, that the side surfaces are covered by the potting body by at least 60% or 80% or 90% or 95%, in particular covered directly. The side faces of the semiconductor chip are preferably completely covered by the potting body.

The semiconductor component has a phosphor body. The phosphor body is set up for the partial or complete conversion of the primary radiation into a secondary radiation.

The secondary radiation has a longer wavelength than the primary radiation. For example, the secondary radiation is green, yellow and/or red light. The secondary radiation together with non-converted components of the primary radiation preferably forms white light, for example warm white light with a correlated color temperature of at least 2500 K and/or at most 4000 K. It is possible for the secondary radiation to have several radiation components that come from several phosphors are generated in the phosphor body. For example, there is a phosphor such as YAG:Ce to produce yellow light and a nitride phosphor to produce red light.

The semiconductor device includes a mirror body. The mirror body is set up for at least partial reflection of the primary radiation and the secondary radiation. In particular, the mirror body reflects diffusely, but can alternatively also be specularly reflective. Furthermore, the mirror body is impermeable to the primary radiation and the secondary radiation or only weakly permeable. For example, a transmittance of the mirror body for the primary radiation and/or the secondary radiation is at most 10% or 5% or 1% or 0.1%.

A chip top side of the semiconductor chip is completely covered by the phosphor body. In this case, the luminescent body can touch the entire surface of the top side of the chip. In particular, the phosphor body is optically arranged directly downstream of the top side of the chip. This can mean that a preferably optically non-functionalized layer such as an adhesive layer is located between the luminescent body and the top side of the chip.

The mirror body at least completely covers a phosphor top side of the phosphor body that faces away from the semiconductor chip. the game gel body can be located directly on the phosphor body.

The semiconductor chip is completely covered by the mirror body when viewed from above. This means that no primary radiation or no significant portion of the primary radiation can escape from the semiconductor component in the direction perpendicular to the top side of the chip.

The optoelectronic semiconductor component includes an optoelectronic semiconductor chip for generating primary radiation. A potting body is set up to reflect the primary radiation. A phosphor body is used for at least partial conversion of the primary radiation into a longer-wavelength secondary radiation. A mirror body for preferably diffuse reflection of the primary radiation and the secondary radiation completely covers the semiconductor chip and completely covers a phosphor top side of the phosphor body that faces away from the semiconductor chip. The potting body at least predominantly covers side areas of the semiconductor chip. A chip top side of the semiconductor chip is completely covered by the phosphor body.

With the semiconductor component described here, it is possible to implement thinner and brighter backlighting devices, for example for LCD displays. In this way, a comparatively small number of semiconductor components can be implemented per unit area, since the semiconductor components described have a high lateral radiation efficiency.

Other ways of constructing semiconductor components for backlighting of displays lie in the use of external optics. However, this is accompanied by comparatively high process costs. Furthermore, high demands are placed on the process tolerances, especially when placing an optic such as a lens. Alternatively, semiconductor components as in the publication US2015/0049510A1 described used, but have a comparatively low optical efficiency.

Increased optical efficiency can be achieved with the semiconductor component described here. In this case, there is a comparatively small emission volume, in particular in the phosphor body. This reduces a number of internal reflections and increases the light extraction efficiency. In addition, the potting body, for example made of silicone mixed with titanium dioxide particles, protects a substrate, for example in the form of a printed circuit board such as a PCB or a so-called light bar, from aging caused by the primary radiation of the semiconductor chip.

Such a semiconductor component is produced in particular in that the semiconductor chips are glued onto the substrate and optionally electrically connected by bonding wires. The encapsulation body is produced in particular by transfer molding, also referred to as molding, so that the chip tops remain free. The phosphor bodies are then produced on the chip tops, again preferably by means of transfer molding. The phosphor bodies are formed in particular from a silicone into which phosphor particles are introduced. In this case, it is possible for bonding wires to be completely encapsulated and to be located completely in the encapsulation body together with the phosphor body, in particular completely in a silicone. The mirror bodies are then applied to the phosphor bodies as highly reflective layers, for example by transfer molding or by gluing. Finally, the semiconductor components are separated.

In summary, an increased optical efficiency can be achieved with the semiconductor component described here, in particular due to the reduced emission volume in the phosphor body. Reduced aging of the substrate, such as a printed circuit board, or PCB for short, is achieved since the substrate can be protected from the primary radiation by the potting body. Furthermore, the phosphor particles are not damaged during the separation process.

In accordance with at least one embodiment, the semiconductor component comprises a transmission body. The transmission body is preferably permeable both to the primary radiation and to the secondary radiation. A transmittance of the transmission body for the primary radiation and/or the secondary radiation is at least 90% or 95%, for example.

According to at least one embodiment, the transmission body is located directly between the phosphor body and the mirror body. In this case, the transmission body preferably covers the top side of the phosphor completely. The mirror body in turn preferably completely covers the transmission body. Deviating from this, it is possible that the phosphor body is only partially covered by the transmission body and the transmission body is only partially covered by the mirror body. Furthermore, it is alternatively possible that the transmission body, then configured as an adhesive layer, for example, is located between the semiconductor chip and the phosphor body and/or is directly adjacent to them.

The encapsulation top of the encapsulation body is covered only partially and preferably directly by the phosphor body. There is a lateral over Stand of the phosphor body over the semiconductor chip, in the direction parallel to the chip top, at least 5% or 10% of a diagonal length of the semiconductor chip, seen in plan view. In addition, this overhang is at most 20% or 15% of the diagonal length. Alternatively or additionally, this overhang is at least 20 μm or 50 μm and/or at most 0.5 mm or 0.2 mm. In particular, this overhang is approximately 0.1 mm.

The potting body protrudes laterally beyond the phosphor body. An overhang or average overhang of the potting body over the phosphor body is at least 10% of the average diagonal length of the semiconductor chip and/or preferably at most 25% or 15% or 10%. Alternatively or additionally, this overhang is at least 20 μm or 50 μm and/or at most 1.5 mm or 0.5 mm or 0.3 mm. In particular, this overhang is approximately 0.2 mm. It is possible that the overhang of the potting body over the phosphor body is greater than the overhang of the phosphor body over the top side of the chip.

In accordance with at least one embodiment, the potting body terminates flush with the semiconductor chip in the direction perpendicular to the top side of the chip. This means that the top side of the encapsulation and the top side of the chip can lie in a common plane.

In accordance with at least one embodiment, the phosphor body, optionally the phosphor body together with the transmission body, has a thickness or average thickness of at least 30% or 50% or 80% of the diagonal length of the semiconductor chip. Alternatively or additionally, the thickness of the phosphor body, optionally together with the transmission body, is at most 150% or 110% or 90% of the diagonal length of the semiconductor chip. Alternatively or additionally, the thickness or average thickness of the phosphor body, optionally together with the transmission body, is at least 0.3 mm or 0.4 mm or 0.5 mm and/or at most 1.2 mm or 1 mm or 0.8 mm. In this case, a diagonal length of the semiconductor chip is 0.7 mm, for example, corresponding approximately to a square outline with an edge length of 0.5 mm.

According to at least one embodiment, the potting body and the mirror body are made of the same materials. These materials are preferably present in the same composition, in particular with the same proportions relative to one another. For example, the potting body and/or the mirror body have a silicone as the matrix material. A reflective material is introduced into the matrix material, in particular in the form of reflective particles. The reflective particles are, for example, metal oxide particles such as titanium dioxide particles.

In accordance with at least one embodiment, the phosphor body has a matrix material in which phosphor particles of one or more phosphors are embedded. The matrix material is a silicone, for example. It is possible for the matrix material of the phosphor body to be the same material as the matrix materials of the potting body and/or the mirror body.

In accordance with at least one embodiment, the semiconductor component emits both the secondary radiation and the primary radiation in all directions in a direction parallel to the top side of the chip. Mixed radiation can thus be emitted on all sides. In other words, the semiconductor component is designed as an all-round emitter, also referred to as a side emitter or side looker.

In accordance with at least one embodiment, the mirror body extends in a central area centrally above the chip top side closer to the semiconductor chip than in an edge area that preferably runs all the way around the central area as seen in a top view. In other words, it is possible for the phosphor body, optionally together with the transmission body, to have a smaller thickness in the center above the top side of the chip than in the edge region. For example, the mirror body has a triangular or trapezoidal or convex shape when viewed in cross section, it being possible for the mirror body to narrow in the direction towards the semiconductor chip.

In accordance with at least one embodiment, the mirror body has a consistent, constant thickness. That is, the mirror body is then free from an intentionally generated thickness variation. The same can apply to the potting body, the phosphor body and/or the transmission body.

The mirror body has a smaller thickness in the edge area than in the central area. In particular, the mirror body is opaque to the primary radiation and the secondary radiation in the central area. It is possible for the mirror body to be permeable to a greater extent for the secondary radiation and/or the primary radiation in the edge region. For example, the transmittance of the mirror body in the edge area is at least 2% or 5% and/or at most 20% or 10% or 5%. It is possible that the edge area is next to the top of the chip when viewed from above. In the central area, which can run congruently with the top side of the chip, the mirror body can have a constant have thickness. The thickness can vary in the edge region, in particular steadily decrease towards the outside.

According to at least one embodiment, a thickness of the phosphor body is between a thickness of the potting body and a thickness of the mirror body. In this case, the casting body can be thicker than the mirror body.

In accordance with at least one embodiment, the semiconductor component comprises a substrate. The semiconductor chip and the potting body are preferably applied together on the substrate, in particular applied directly. Thus, there is preferably only one connecting means such as a solder or an electrically conductive adhesive between the substrate and the semiconductor chip.

In accordance with at least one embodiment, the substrate comprises electrical contact areas for external electrical contacting of the semiconductor component. Alternatively, such electrical contact areas are located directly on the semiconductor chip, in particular if there is no substrate.

In accordance with at least one embodiment, the semiconductor component can be surface-mounted. This can be implemented via the contact areas on a mounting side of the substrate or via contact areas directly on the semiconductor chip.

In accordance with at least one embodiment, the semiconductor chip is electrically contact-connected with at least one bonding wire on the top side of the chip. The bonding wire preferably extends starting from the substrate to the chip top.

According to at least one embodiment, the bonding wire lies completely in the potting body together with the phosphor body and optionally together with the transmission body. As a result, the bonding wire is efficiently protected against external influences, in particular mechanical ones.

According to at least one embodiment, the semiconductor chip is a flip chip. This means that all electrical contact areas for external electrical contacting of the semiconductor chip are located on a common main side, which preferably faces away from the phosphor body.

In accordance with at least one embodiment, the semiconductor chip is attached mechanically and electrically to the substrate directly and preferably without bonding wires. It is possible for the substrate to represent the mechanically supporting and stabilizing component of the semiconductor device. The substrate can be a so-called submount.

In accordance with at least one embodiment, the semiconductor component comprises a connecting means, which is in particular an adhesive. For example, the semiconductor chip is attached to the substrate by means of the connecting means, either in an electrically conductive or electrically insulating manner.

In accordance with at least one embodiment, the connecting means partially covers the chip side surfaces. A degree of coverage of the chip side faces by the connecting means is, for example, at most 30% or 20%.

According to at least one embodiment, the connecting means is triangular in cross-section. Viewed in cross section, the connecting means is preferably enclosed by the chip side faces, the substrate and the potting body. The bonding agent may form a fillet formed between the chip faces and the substrate. A side surface of the connecting means, which extends from the chip side surfaces to the substrate, can run straight as seen in cross section or alternatively be convexly or concavely curved.

In accordance with at least one embodiment, the semiconductor chip and the phosphor body have different basic shapes when viewed from above. For example, the semiconductor chip has a square, rectangular or hexagonal shape and the phosphor body has a circular or oval or hexagonal or octagonal shape.

In accordance with at least one embodiment, the phosphor body and the mirror body have the same basic shape in a plan view. For example, the phosphor body and the mirror body are shaped to be round or oval or hexagonal when viewed from above. In particular, the phosphor body and the mirror body are arranged congruently with one another when viewed from above.

As an alternative or in addition to the mirror body having a smaller thickness in an edge area than in a central area, the mirror body protrudes laterally beyond the phosphor body or vice versa. A lateral projection of the mirror body over the phosphor body or vice versa is preferably comparatively small and is in particular at least 2% or 5% and/or at most 30% or 20% or 10% of the diagonal length of the semiconductor chip.

In addition, a production method for an optoelectronic semiconductor component is specified. With the method, a semiconductor component prepared as described in connection with one or more of the above embodiments. Features of the semiconductor component are therefore also disclosed for the method and vice versa.

• - Bereitstellen eines Trägers und Aufbringen der Halbleiterchips auf den Träger, wobei es sich bei dem Träger insbesondere um das Substrat handelt,
• - Erzeugen des Vergusskörpers, sodass der Vergusskörper bevorzugt bündig mit den Chipoberseiten abschließt,
• - Erzeugen der Leuchtstoffkörper, insbesondere unmittelbar an den Chipoberseiten,
• - Aufbringen der Spiegelkörper je auf den zugehörigen Leuchtstoffkörper, insbesondere durch ein Spritzpressen oder mittels Aufkleben, und
• - Vereinzeln zu den fertigen Halbleiterbauteilen.

In at least one embodiment, the manufacturing process comprises the following steps, preferably in the order given:

• - providing a carrier and applying the semiconductor chips to the carrier, the carrier being in particular the substrate,
• - Creation of the potting body so that the potting body is preferably flush with the chip tops,
• - Generating the phosphor bodies, in particular directly on the chip tops,
• - Applying the mirror body to the associated phosphor body, in particular by transfer molding or by gluing, and
• - Separation to the finished semiconductor components.

According to at least one embodiment, the isolation is limited to the potting body and optionally to the carrier. The phosphor bodies and preferably also the mirror bodies are therefore not affected by the separation. Damage to phosphor particles in the phosphor body can thus be avoided. Such damage can otherwise cause contamination and/or chemical reactions that impair the optical efficiency of the semiconductor component.

A semiconductor component described here and a production method described here are explained in more detail below with reference to the drawing using exemplary embodiments. The same reference symbols indicate the same elements in the individual figures. However, no references to scale are shown here; on the contrary, individual elements may be shown in an exaggerated size for better understanding.

• 1, 2, 6, 9 schematische Schnittdarstellungen von Beispielen von optoelektronischen Halbleiterbauteilen,
• 3 bis 5, 7, 8 und 10 schematische Schnittdarstellungen von Ausführungsbeispielen von hier beschriebenen optoelektronischen Halbleiterbauteilen,
• 11 schematische Draufsichten auf Ausführungsbeispiele von hier beschriebenen optoelektronischen Halbleiterbauteilen, und
• 12 schematische Schnittdarstellungen von Verfahrensschritten eines hier beschriebenen Verfahrens zur Herstellung von Ausführungsbeispielen von optoelektronischen Halbleiterbauteilen.

Show it:

• 1 , 2 , 6 , 9 schematic sectional views of examples of optoelectronic semiconductor components,
• 3 until 5 , 7 , 8th and 10 schematic sectional views of exemplary embodiments of optoelectronic semiconductor components described here,
• 11 schematic top views of exemplary embodiments of optoelectronic semiconductor components described here, and
• 12 schematic sectional representations of method steps of a method described here for the production of exemplary embodiments of optoelectronic semiconductor components.

In 1 an example of an optoelectronic semiconductor component 1 is shown. The semiconductor component 1 comprises an optoelectronic semiconductor chip 2, preferably a light-emitting diode chip. The semiconductor chip 2 is set up to generate a primary radiation, preferably blue light.

A substrate 6, for example a printed circuit board, is located on a chip underside 22 of the semiconductor chip 2. A mounting side 60 of the semiconductor component 1 is formed by the substrate 6 . Furthermore, there are electrical contact areas 61 on the substrate 6 for external electrical contacting of the semiconductor component 1. One of the contact areas 61 runs, for example, congruently or almost congruently with the semiconductor chip 2. Another contact area 61 is connected via a bonding wire 62 to a chip top side 23 facing away from the substrate 6 of the semiconductor chip 2 is electrically connected.

The semiconductor chip 2 is connected to the substrate 6 via a connecting means 7, which can be electrically conductive. The connecting means 7 is, for example, an adhesive, in particular based on epoxy, which can be provided with conductive particles, for example made of silver. Seen in cross section, the connecting means 7 has a triangular shape.

Side surfaces 21 of the semiconductor chip 2 are covered by the connecting means 7 only to a small extent. The majority of the side faces 21 is directly covered by a potting body 3 , with a potting top 30 facing away from the substrate 6 terminating flush with the chip top 23 . The potting body 3 is preferably diffusely reflective and appears white. In particular, the potting body 3 is formed by a silicone in which reflecting titanium dioxide particles are embedded. The bonding wire 62 runs through the potting body 3.

Furthermore, the semiconductor component 1 comprises a luminescent body 4. The chip top 23 is completely covered by the luminescent body 4. FIG. Furthermore, the phosphor body 4 extends with a projection A onto the potting body 3. The projection A is 0.1 mm, for example.

The luminescent body 4 comprises one, preferably several, luminescent materials for the partial conversion of the primary radiation into a longer-wavelength secondary radiation. By means of the phosphor body pers 4, the semiconductor component 1 can generate white light in particular.

A projection B of the potting body 3 over the phosphor body 4 is, for example, at least 0.1 mm and/or at most 1 mm. The substrate 6 is completely covered by the potting body 3 together with the semiconductor chip 2 .

A mirror body 5 is located on a phosphor top 40 facing away from the semiconductor chip 2. The mirror body 5 covers the phosphor top 40 completely and with a constant layer thickness and ends flush with the phosphor top 40. The mirror body 5 is preferably diffusely reflecting and appears white and can be made of the same materials as the casting body 3. The mirror body 5 is preferably impermeable to the primary radiation and the secondary radiation.

A thickness of the phosphor body 4 is, for example, approximately 2/3 of a diagonal length of the semiconductor chip 2 and is therefore comparatively thin. The primary radiation is thus converted into the secondary radiation in a comparatively small volume. As a result, efficient radiation 360° all around the semiconductor chip 2 is possible with a high level of efficiency. Only a few reflections take place within the luminescent body 4 .

The primary radiation and secondary radiation emerging from the phosphor body 4 is partially reflected at the areas of the encapsulation top 30 that protrude beyond the phosphor body 4 . The potting top 30 is preferably flat and planar in shape, may deviate from the illustration in 1 as well as in all other examples and exemplary embodiments also run curved.

Alternatively, as in all other examples and exemplary embodiments, the mirror body 5 can be a specularly reflecting mirror. For example, the mirror body 5 is then formed from a metal layer or from a Bragg mirror.

The semiconductor component 1 described here is used in particular for backlighting displays. Due to the lateral radiation, comparatively few semiconductor components are required to backlight a display over a large area.

In the example of 2 the semiconductor chip 2 is designed as a flip chip. The contacting areas of the semiconductor chip 2 are therefore on the side facing the substrate 6, so that no bonding wires are required. The chip side faces 21 are completely covered by the potting body 3 . Otherwise, the statements on 1 .

In the following 3 until 11 semiconductor chips 2 are used in each case, as in 2 shown. Alternatively, the semiconductor chips 2 can be made in the same way 1 , which are electrically contacted via one or alternatively via two bonding wires.

In the embodiment of 3 the phosphor body 4 and the mirror body 5 have a varying thickness. Viewed in cross section, the mirror body 5 has a convex shape. A top side of the mirror body 5 facing away from the semiconductor chip 2 is planar.

If the semiconductor chip 2 is designed as a flip chip, the substrate 6 can be omitted, as in FIG 3 illustrated as an example.

In contrast, the mirror body 5 in the embodiment of 4 toward the luminescent body 4 seen in cross section obliquely and thereby straight boundary lines. Also in 4 the mirror body 5 narrows in the direction towards the semiconductor chip 2, as also in FIG 3 .

In 4 it is additionally illustrated that the substrate 6 does not necessarily extend over the entire potting body 3 .

In the embodiment of 5 the mirror body 5 protrudes beyond the phosphor body 4. A projection C is, for example, 0.1 mm. This configuration makes it possible for only a comparatively small proportion of radiation to be emitted directly in the direction perpendicular to the top side 23 of the chip. It is thus possible to eliminate glare and avoid bright areas directly above the semiconductor component 1, in particular in a display.

The semiconductor device 1, as in 6 shown, additionally has a transmission body 8 . The transmission body 8 is preferably transparent and permeable to the primary radiation and the secondary radiation. Alternatively, the transmission body 8 can have a small proportion of light-scattering particles and be cloudy.

The transmission body 8 is located congruently and directly between the phosphor body 4 and the mirror body 5. For example, the phosphor body 4 and the transmission body 8 together have a thickness of approximately 65% of the diagonal length of the semiconductor chip 2. The transmission body 8 preferably contributes at least 60% or 70% and/or at most 95% or 90% or 85% to a Total thickness of the transmission body 8 and the phosphor body 4 at. In other words, the transmission body 8 can be thicker than the phosphor body 4.

According to 7 the phosphor body 4 is also covered by the transmission body 8 on side surfaces. This means that the mirror body 5 protrudes beyond the phosphor body 4, with the mirror body 5 and the transmission body 8 preferably terminating flush with one another. A projection of the transmission body 8 over the phosphor body 4 is, for example, at least 0.1 mm or 0.2 mm and/or at most 0.6 mm or 0.4 mm.

In the embodiment of 8th it is illustrated that side surfaces of the phosphor body 4 are free of the transmission body 8 . In this case, the transmission body 8 protrudes laterally beyond the luminescent body 4 . Furthermore, the transmission body 8 is laterally surmounted by the mirror body 5 . These projections are preferably at least 0.1 mm and/or at most 0.6 mm.

According to 9 the transmission body 8 is comparatively thin and designed as an adhesive layer. Thus, the transmission body 8 is located directly between the semiconductor chip 2 together with the potting body 3 and the phosphor body 4.

In the embodiment of 10 the mirror body 5 has a varying thickness in a central area on a side facing away from the semiconductor chip 2 . For example, the mirror body 5 is impermeable to the primary radiation and the secondary radiation directly above the semiconductor chip 2 . The mirror body 5 is made thinner in an edge area around the central area all the way around, seen in a top view, next to the semiconductor chip 2 and can be slightly permeable to the primary radiation and/or the secondary radiation. The central area can be congruent with the top side 23 of the chip.

A low transmission through the mirror body 5 through at the edge region can also be used in the exemplary embodiments of FIG 3 and/or 4.

In 11 top views of exemplary embodiments are shown. The representations in 11 can be used in the same way for all examples and exemplary embodiments 1 until 10 be valid. To simplify the illustration, the mirror body 5 is only designed with a constant, unvarying thickness; mirror bodies 5 with a varying thickness can also be used in each case, see, for example, FIG 3 , 4 and 10 . Furthermore, to simplify the illustration, the transmission body 8 is not illustrated, although it can still be present, see FIG 6 until 9 .

According to 11A the semiconductor chip 2, the phosphor body 4 and the mirror body 5 each have the same basic shape, namely a square or rectangular basic shape. The potting body 3 is also designed to be rectangular or square when viewed from above.

In contrast, the basic shapes of the semiconductor chip 2 on the one hand and the phosphor body 4 and the mirror body 5 on the other hand differ in the 11B and 11C from each other. The phosphor bodies 4 and the mirror bodies 5 are each circular in shape, whereas the semiconductor chips 2 are square or hexagonal in shape.

In the exemplary embodiments, the semiconductor component 1 comprises only exactly one semiconductor chip 2. Alternatively, a plurality of the semiconductor chips 2 can also be present, each of which can be individually arranged downstream of a phosphor body 4 with an associated mirror body 5 . Alternatively, a single phosphor body 4 and mirror body 5 can be arranged jointly downstream of a plurality of semiconductor chips 2 .

In 12 a manufacturing method for semiconductor components 1 is illustrated, in particular as in FIG 1 illustrated. The manufacturing method can be transferred accordingly to all other examples and exemplary embodiments.

According to 12A a carrier 6 is provided, which can be a temporary intermediate carrier or the substrate 6 that is later present in the finished semiconductor components 1 . The semiconductor chips 2 are attached to the carrier 6 in a preferably regular grid via the connecting means 7 .

In the process step 12B the cast body 3 is produced. The chip tops 23 remain free of a material of the potting body 3. The chip tops 23 lie in a common plane with the potting top 30.

Below, see 12C , the phosphor bodies 4 are produced, in particular by means of transfer molding. The bonding wires 62 are completely embedded in the potting body 3 together with the phosphor bodies 4 . One of the phosphor bodies 4 is preferably uniquely assigned to each of the semiconductor chips 2 .

In the optional step of 12D the mirror bodies 5 are manufactured separately and below, see 12E , preferably applied congruently to the phosphor tops 40 . Alternatively, it is possible that the steps of 12D and 12E be carried out together, so that the mirror bodies 5 can be produced directly on the phosphor bodies 4, for example by means of transfer molding.

If the mirror bodies 5 are produced separately, there is, for example, a particularly thin adhesive (not shown) between the phosphor bodies 4 and the associated mirror bodies 5 . There is also preferably a one-to-one assignment between the mirror bodies 5 and the phosphor bodies 4 .

In 12F Finally, it is illustrated that the finished semiconductor components 1 are singulated. The isolation is limited to the potting body 3 and optionally to the carrier 6. The phosphor bodies 4 are not affected by the isolation.

If the carrier 6 is not used in the finished semiconductor components 1, then the carrier 6 is preferably detached before singulation. This applies in particular in the case of flip chips, which can be electrically contacted without bonding wires.

Unless otherwise indicated, the components shown in the figures preferably follow one another in the order given. Layers that are not touching in the figures are preferably spaced apart from one another. Insofar as lines are drawn parallel to one another, the corresponding areas are preferably also aligned parallel to one another. Likewise, unless otherwise indicated, the relative positions of the drawn components to one another are correctly reproduced in the figures.

Reference List

1

optoelectronic semiconductor component

2

optoelectronic semiconductor chip

21

chip face

22

chip bottom

23

chip top

3

potting body

30

potting top

4

fluorescent body

40

fluorescent top

5

mirror body

6

substrate

60

mounting side

61

electrical contact surface

62

bonding wire

7

lanyard

8th

transmission body

A

Projection of the phosphor body over the semiconductor chip

B

Projection of the potting body over the phosphor body

C

Projection of the mirror body over the phosphor body

Claims (15)

Optoelectronic semiconductor component (1) with - an optoelectronic semiconductor chip (2) for generating primary radiation, - a casting body (3) for reflecting the primary radiation, - A phosphor body (4) for at least partially converting the primary radiation into a longer-wave secondary radiation, and - A mirror body (5) for reflecting the primary radiation and the secondary radiation, wherein - the potting body (3) at least predominantly covers side faces (21) of the semiconductor chip (2), - The phosphor body (4) completely covers a chip top (23), and - the mirror body (5) completely covers a phosphor top side (40) of the phosphor body (4) facing away from the semiconductor chip (2) and the semiconductor chip (2), - an encapsulation top (30) of the encapsulation body (3) is only partially covered by the luminescent body (4), - a lateral overhang of the phosphor body (4) beyond the semiconductor chip (2) is between 5% and 20% of a diagonal length of the semiconductor chip (2), seen in plan view, - a lateral overhang of the casting body (3) over the fluorescent body (4) is at least 10% of the diagonal length, - the mirror body (5) protrudes laterally beyond the phosphor body (4) and/or the mirror body (5) has a smaller thickness in an edge area than in a central area, and - The mirror body (5) is opaque to the primary radiation and the secondary radiation. Optoelectronic semiconductor component (1) according to the preceding claim, in which the side surfaces (21) are completely and directly covered by the diffusely reflecting potting body (3), the upper side (23) is completely and directly covered by the phosphor body (4) and the phosphor top side (40) are completely and directly covered by the opaque and diffusely reflecting mirror body (5). Optoelectronic semiconductor component (1) according to claim 1 , further comprising a translucent transmission body (8), wherein the side surfaces (21) completely and directly from the diffusely reflecting potting body (3), the top (23) completely and directly from the phosphor body (4) and the phosphor top (40) completely from the opaque and diffusely reflecting mirror body (5) are covered, and wherein the transmission body (8) is located directly between the phosphor body (4) and the mirror body (5). Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the casting body (3) and the mirror body (5) are made of the same materials, these materials being present in equal proportions in the casting body (3) and in the mirror body (5). Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the casting body (3) and/or the mirror body (5) are composed of a silicone as the matrix material and of metal oxide particles as the reflective material, wherein the phosphor body (4) has the same matrix material for phosphor particles. Optoelectronic semiconductor component (1) according to one of the preceding claims, which emits both the secondary radiation and the primary radiation in all directions in a direction parallel to the top side (23) of the chip, so that the semiconductor component (1) is designed as an all-round emitter. Optoelectronic semiconductor component (1) according to the preceding claim, in which the mirror body (5) extends closer to the semiconductor chip (2) in a central region centered over the top side (23) of the chip than in a peripheral region surrounding the central region as seen in plan view. Optoelectronic semiconductor component (1) according to the preceding claim, in which a thickness of the phosphor body (4) lies between a thickness of the potting body (3) and a thickness of the mirror body (5), wherein the casting body (3) is thicker than the mirror body (5). Optoelectronic semiconductor component (1) according to one of the preceding claims, further comprising a substrate (6) on which the semiconductor chip (2) and the potting body (3) are applied, wherein the substrate (6) comprises electrical contact areas (61) for external electrical contacting of the semiconductor component (1), so that the semiconductor component (1) can be surface-mounted on a mounting side (60) of the substrate (6). Optoelectronic semiconductor component (1) according to the preceding claim, in which the semiconductor chip (2) is electrically contacted with at least one bonding wire (62) on the top side (23) of the chip and the bonding wire (62) is completely in the potting body (3) together with the phosphor body (4) runs. Optoelectronic semiconductor component (1) according to claim 9 , In which the semiconductor chip (2) is a flip chip which is mechanically and electrically applied to the substrate (6) directly and without bonding wires. Optoelectronic semiconductor component (1) according to one of claims 9 until 11 , further comprising a connecting means (7) in the form of an adhesive, so that the semiconductor chip (2) is attached to the substrate (6) by means of the connecting means (7), the connecting means (7) partially covering the chip side surfaces (21) and in cross section seen to be triangular in shape. Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the semiconductor chip (2) and the phosphor body (4) have different basic shapes when viewed from above, the phosphor body (4) and the mirror body (5) having the same basic shape. Production method, wherein an optoelectronic semiconductor component (1) according to one of the preceding claims is produced with the following steps in the given order: - Providing a carrier (6) and applying the semiconductor chips (2) to the carrier (6), - Creating the potting body (3) so that the potting body (3) is flush with the chip tops (23), - Generating the phosphor bodies (4), - Applying the mirror body (5) depending on the associated phosphor bodies (4), and - Separation to the finished semiconductor components (1). The method according to the preceding claim, wherein the isolation is limited to the carrier (6) and the potting body (3), so that the Fluorescent body (4) and the mirror body (5) are not affected by the isolation.

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