WO2012084451A1

WO2012084451A1 - Optoelectronic semiconductor component

Info

Publication number: WO2012084451A1
Application number: PCT/EP2011/071534
Authority: WO
Inventors: Christian Gärtner; Ales Markytan; Albert Schneider; Stephan Kaiser
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2010-12-20
Filing date: 2011-12-01
Publication date: 2012-06-28
Also published as: CN103262267A; US20130320369A1; US9312435B2; DE102010055265A1; KR20130099210A; CN103262267B

Abstract

In at least one embodiment of the optoelectronic semiconductor component (10), the optoelectronic semiconductor component comprises a first light source (1), which emits white-green light. The first light source (I) has a semiconductor chip (4) that emits in the blue spectral range, on which a first converting element (II) is attached. The semiconductor component (10) further contains a second light source (2), which emits in the red spectral range. The second light source (2) comprises a semiconductor chip (4) that emits in the blue spectral range, downstream of which a second converting element (22) is arranged, or the second light source (2) comprises a semiconductor chip (5) that emits directly in the red spectral range. Furthermore, the semiconductor component (10) has a third light source (3), which emits blue light and which has a semiconductor chip (4) that emits in the blue spectral range. A potting body (6) of the semiconductor component (10) comprises a matrix material, in which a converting means is embedded. The potting body (6) is arranged downstream of the light sources (1, 2, 3) jointly.

Description

description

Optoelectronic Semiconductor Device An optoelectronic semiconductor device is specified.

An object to be solved is to specify an optoelectronic semiconductor component which exhibits a uniform color emission as a function of an emission angle.

According to at least one embodiment of the semiconductor component, this comprises a first light source. The first light source is configured to emit green light, white light or white ^¬ green light. The first light source has one or more optoelectronic semiconductor chips which are set up to emit light in the blue spectral range during operation of the semiconductor component. The at least one semiconductor chip is preferably a light-emitting diode, in short LED, or a laser diode. Blue spectral range in particular means that a maximum

Intensity in the spectral range between 435 nm to 470 nm is emitted. A spectral width of the

emitted light, referred to a full width at half the height of the maximum, also referred to as FWHM, is preferably less than 20 nm and lies in particular between

including 10 nm and 20 nm.

According to at least one embodiment of the semiconductor component, the first light source comprises a first conversion element. The conversion element is preferably attached directly to the semiconductor chip. Immediately does not exclude that between the first conversion element and the

Semiconductor chip is a connecting means such as an adhesive, with which the first conversion element on the semiconductor chip is appropriate. Along a main radiation direction of the

Semiconductor chips, in particular along one direction

perpendicular to a main radiation side of the semiconductor chip, a maximum distance of a semiconductor chip remote from the main side of the first conversion element to the semiconductor chip is preferably at most 200 μπι, in particular at most 160 μπι, at most 120 μπι, at most 80 μπι or at most 40 μπι. The first conversion element is preferably arranged downstream of the semiconductor chip of the first light source.

The first conversion element completely or partially covers the main radiation side of the semiconductor chip. The conversion element preferably has a transparent matrix material, to which a conversion agent is added. The

Conversion means and thus the first conversion element is adapted to at least partially absorb light from the semiconductor chip and into light from another

Wavelength convert. The first conversion element can by means of a dispensing process directly on the

Semiconductor chip be applied or in the form of a

Slide with a silicone or a ceramic as

Matrix material to be glued to the semiconductor chip. According to at least one embodiment of the semiconductor component, the latter comprises a second light source, which is set up to emit red light during operation of the semiconductor component

emit. In particular, red light means that a wavelength at which a maximum intensity is emitted is in the spectral range between 600 nm and 660 nm inclusive. For this purpose, the second light source has at least one semiconductor chip which emits in the blue spectral range and to which a second conversion element is preferably arranged directly downstream, the second conversion element being blue Light of the semiconductor chip partially or completely

absorbed and converted into red light. Preferably, the second conversion element is arranged downstream only of the semiconductor chips of the second light source. Alternatively or

In addition, the second light source has a

Semiconductor chip on, the light directly in the red

Spectral region emitted, wherein this semiconductor chip then preferably no second conversion element is arranged downstream. The second conversion element can analogously to the first

Conversion element be configured.

According to at least one embodiment of the semiconductor component, this has a third light source. The third

Light source is designed to operate during operation of the

Semiconductor device blue light to emit. The third

For this purpose, the light source has at least one semiconductor chip which emits in the blue spectral range. In particular, the third light source is free of a conversion element. According to at least one embodiment of the semiconductor component, this includes a potting body. The potting body comprises a matrix material, for example a silicone, an epoxide, a silicone-epoxy hybrid material or a

synthetic carbon-based polymer such as polycarbonate. The matrix material of the potting body is preferably at least partially transparent to light emitted by the light sources. In the matrix material is a

Embedded conversion means which is adapted to partially absorb light emitted by the light sources and converted into radiation of a different wavelength.

According to at least one embodiment of the potting body, it is arranged downstream of the light sources. In other words, the potting body covers each of the light sources partially or completely. So everyone follows

Light sources, in places or over the entire surface, along the main emission of the respective semiconductor chips or along a main emission of the semiconductor device after a portion of the potting after.

In at least one embodiment of the optoelectronic semiconductor component, the latter comprises a first light source which emits green, white or white-green light. The first light source has one in the blue spectral range

emitting semiconductor chip, on which a first conversion element is mounted directly. Furthermore, the semiconductor component includes a second, in the red spectral region emitting light source. The second light source comprises a semiconductor chip emitting in the blue spectral range, to which a second conversion element is arranged directly downstream, or the second light source comprises a semiconductor chip emitting directly in the red spectral range. Furthermore, the semiconductor device has a third, blue light

emitting light source with a semiconductor chip emitting in the blue spectral range. A potting body of

Semiconductor device comprises a matrix material in which a conversion agent is embedded. The potting body is arranged downstream of the light sources together.

Through the potting body finds a distribution of light along main directions of extension of the potting and / or perpendicular to the main emission of the

Semiconductor device instead. Furthermore, by the

Potting a wavelength conversion of the of the

Light sources generated light. As a result, a more uniform emission of light, seen with respect to an emission angle, with respect to a color locus of the light, can be realized. According to at least one embodiment of the semiconductor component, the light emitted by the semiconductor chips of the first light source and the second light source reaches at least 75%, preferably at least 90%, in the first

Conversion element and in the second conversion element. In other words, substantially all of the radiation emitted by the semiconductor chips of the first light source and of the second light source passes into the associated radiation

Conversion elements.

According to at least one embodiment of the semiconductor component, all semiconductor chips are arranged on a common carrier. The carrier is in particular a printed circuit board. For example, all the semiconductor chips are mounted on a common carrier main side of the carrier and are the same in their main emission directions

oriented. It is therefore possible for all the main emission directions of the semiconductor chips to be aligned parallel to one another.

In particular, all semiconductor chips lie in a common plane.

According to at least one embodiment of the semiconductor component, the first conversion element is configured to emit radiation emitted by the semiconductor chip of the first light source that reaches the first conversion element to at most 80% or at most 70% or at most 60% or at most 40% to absorb and convert to a different wavelength. Preferably, a portion of the light of the first semiconductor chip, which is converted by the first conversion element into a different wavelength, between

including 20% and 80% or between 40% and 75% inclusive. The light emitted by the first light source preferably has a color location in the CIE standard color chart, for which: 0.15 <c _x <0.32 or 0.22 <c _x <0.28. According to at least one embodiment of the semiconductor component, the potting body is set up to convert at least 5% of light of the semiconductor chips of the first and the third light source emitting in the blue spectral range into a different wavelength. In particular, is the

Conversion level between 15% and 85% inclusive or between 30% and 80% inclusive. Green and / or red light absorbed by the potting preferably not or only negligibly.

According to at least one embodiment of the semiconductor component, the light of the first light source has a color locus in the CIE standard color chart before entry into the potting body, wherein for coordinates of this color locus: 0.1 <c _x ^ 0.31 and / or 0, 1 <c _y ^ 0.32. Furthermore, the emits

Semiconductor component then preferably in operation white

Mixed light formed by light from the three light sources and having a correlated color temperature between

including 2300K and 7000K. In particular, white means that the mixed light emitted from the semiconductor device has a color locus whose color coordinates c _x and c _y each have a pitch of at most 0.02 units from the blackbody curve in the CIE standard color chart. The combination of the three light sources makes it possible to achieve a high color rendering index R _a of in particular at least 75 or at least 80 or at least 90.

According to at least one embodiment of the semiconductor component, the potting body, in addition to the conversion agent, additionally has scattering particles. The scattering particles are arranged to change the light striking the scattering particles in the direction. Preferably, a

Refractive index difference between the matrix material of the Potting body and a material of the scattering particles at a temperature of 300 K at most 0.10, more preferably at most 0.05 or at most 0.02. In other words, the refractive index difference between the material is the

Scattering particles and the conversion agent comparatively low. The material of the scattering particles is preferred

transparent to the light of the light sources. If there are further scattering particles in the potting body which have a greater refractive index difference than stated, then a proportion of these further scattering particles on the potting body is preferably at most 0.1% by volume or at most 0.1% by weight.

According to at least one embodiment of the semiconductor component, the potting body has an average thickness, in particular in a direction parallel to the main emission direction of the semiconductor device

Semiconductor component, between 200 μπι and 800 μπι or between 300 μπι and 600 μπι on. The thickness is in particular averaged over the entire lateral

Expansion of the potting body.

According to at least one embodiment of the semiconductor component, the conversion agent and / or the scattering particles are each distributed homogeneously in the entire potting body. In other words, a targeted concentration gradient that goes beyond statistical fluctuations is not

Potting set.

According to at least one embodiment of the semiconductor component, the potting body and the first conversion element of the first light source contain the same conversion means,

especially in different volume concentrations.

In particular, the conversion agent is in the first

Conversion element higher concentrated than in the Potting. The same conversion means means that a material composition of the conversion agent within the manufacturing tolerances for the potting body and for the first conversion element is the same. Also preferred is a shape of particles of the conversion agent in each case

Frame of manufacturing tolerances same, in particular a size distribution of the particles. Contain the potting body and the first conversion element mixtures of

Conversion, so these mixtures in the

Potting and be the same in the first conversion element.

According to at least one embodiment of the semiconductor component, the potting body, the first conversion element and the second conversion element each have a respective one another

different conversion means. In particular, the potting body is free of conversion agents in the

Conversion elements are present. It is possible that the potting body and the conversion elements contain mixtures of different conversion agents.

In accordance with at least one embodiment of the semiconductor component, some or all of the semiconductor chips have the

Light sources in a lateral direction, perpendicular to

Main emission, each at least in places mounted a reflector potting. The semiconductor chips are thus completely or partially surrounded in the lateral direction by the reflector casting. The reflector casting is preferably in direct, physical contact with the semiconductor chips in the lateral direction, in particular with respect to each individual one of the semiconductor chips.

According to at least one embodiment of the semiconductor component, the potting body is arranged downstream of the reflector potting and applied at least in places directly on the reflector potting and / or on the semiconductor chip of the third light source and / or on the first conversion element and / or on the second conversion element. Especially

the potting body covers the entire reflector potting. The potting body is then in direct, physical contact with the components mentioned.

According to at least one embodiment of the semiconductor component, the reflector potting, as seen in one direction along the main emission direction, is flush with the reflector

Radiation main sides of at least one of the semiconductor chips or all semiconductor chips from. A tolerance for flush termination is preferably at most 40 μπι or at most 20 μπι. Alternatively, it is possible that the

Reflektorverguss, seen along the main emission direction, does not reach up to the main radiation sides of the semiconductor chips or that the reflector Verguss the

Semiconductor chips, along the main emission direction, surmounted. In this case, the main radiation sides of the semiconductor chips are preferably not covered by the reflector casting.

In accordance with at least one embodiment of the semiconductor component, the semiconductor chips are each spaced apart from one another. In other words, then the semiconductor chips do not touch each other. In particular, in each case one material of the reflector casting and / or of the potting body is located between adjacent semiconductor chips. According to at least one embodiment of the semiconductor component, the light sources and / or the semiconductor chips are electrically controllable independently of one another. This is the

correlated color temperature of the semiconductor device in the

Operation emitted white mixed light tunable. According to at least one embodiment of the semiconductor component, all the semiconductor chips of the light sources, ie all

Semiconductor chips of the semiconductor device, identical.

For example, each is on InGaN

based light emitting diodes that emit blue light.

According to at least one embodiment of the semiconductor component, the third light source is free of the first and the second conversion element and is not covered by these. In other words, then the potting body is the only component which has a conversion means and is arranged downstream of the third light source in a radiation direction.

Hereinafter, a semiconductor device described herein with reference to the drawing based on

Embodiments explained in more detail. The same reference numerals indicate the same elements in the individual figures. However, there are no scale relationships shown, but individual elements can be shown exaggerated for better understanding.

Show it:

Figures 1 to 4 are schematic representations of

Embodiments of optoelectronic semiconductor devices described here. In Figure 1 is an embodiment of a

Optoelectronic semiconductor device 10 shown in Figure 1A in a schematic sectional view along the line AA, in Figure IC in a schematic plan view and in Figure 1B in a schematic plan view below

Omission of certain components.

The semiconductor device 10 has a carrier 7 with a

Carrier main page 70 on. There are electrical connection points 9a, 9b, 9c, 9d on the carrier main side 70 as well as on one of the opposite carrier undersides. The

Connection points 9a, 9c are formed flat. The

Connection points 9a, 9b, 9c, 9d are formed from a metal or a metal alloy and preferably have a thickness of between 5 μπι and 150 μπι, in particular

between 50 μπι and 90 μπι or between

including 5 μπι and 25 μπι on. The connection points 9a, 9b on the carrier main side 70 are preferably not shown through vias each with the

Connection points 9c, 9d electrically and / or thermally connected to the underside of the carrier 7. The carrier 7 is, for example, a ceramic carrier with a high thermal conductivity.

The semiconductor device 10 includes a first light source 1 for emitting green-white light, a second light source 2 for emitting red light, and a third light source 3 for emitting blue light. Semiconductor chips 4 of the light sources 1, 2, 3 are respectively on the connection points 9a on the

Carrier main side 70 mounted in a common plane. All semiconductor chips 4 are identical and emit in the

Operation in the blue spectral range. The first light source 1 comprises two of the semiconductor chips 4, the second light source 2 and the third light source 3 each have only one of the semiconductor chips 4. The number of semiconductor chips 4 in the exemplary embodiments of the semiconductor components 10 may differ from the illustrated number in each case. A thickness of Semiconductor chips along a main emission direction M is in particular between 80 μπι and 200 μπι inclusive.

The semiconductor chips 4 of the first light source 1 are followed by a first conversion element 11. The first

Conversion element 11 is for example a

Silicone plate containing a conversion agent. A thickness of the first conversion element 11 along the

Main emission direction M of the semiconductor device 10, perpendicular to the main carrier side 70, is in particular between 30 μπι and 150 μπι. The tile is for

Example glued on the semiconductor chip 4 and to

set up by the semiconductor chip 4 of the first

Light source 1 emitted blue radiation partially too

absorb and in light of a different wavelength

convert. An emission spectrum of the first

Conversion element 11 preferably has a maximum

Intensity in the wavelength range between 525 nm and 570 nm, in particular between inclusive

550 nm and 560 nm. The emission spectrum of the first

Conversion element 11 extends for example from

including 530 nm to 580 nm or 510 nm to 610 nm inclusive. For example, or includes

Conversion Particles Particles or with a rare-earth-doped garnet such as YAG: Ce.

On the semiconductor chip 4 of the second light source 2, a second conversion element 22 is applied directly. One wavelength of maximum emission of the second

Conversion element 22 is preferably between

including 590 nm and 660 nm, in particular between 595 nm and 610 nm inclusive. A spectral width of the emission of the second conversion element 22 is preferably between 50 nm and 130 nm, based on a full width at half height, FWHM. For example, the second conversion element 22 comprises a rare-earth-doped orthosilicate such as (Ba, Sr 2 SiO 2 Eu or a rare earth-doped silicon oxynitride or silicon nitride such as (Ba, Sr) ₂ Si ₅ N ₈ : Eu.

In a lateral direction L close the

Conversion elements 11, 22 in the context of

Manufacturing tolerances each flush with the semiconductor chips 4 from. The third light source 3 is in this case free of a conversion element.

In a lateral direction, the semiconductor chips 4 are surrounded by a reflector potting 8 all around. Of the

Reflektorverguss 8 extends, from the main carrier side 70 forth, not quite up to main radiation sides 40 of

Semiconductor chips 4, which are remote from the carrier 7, approach. The reflector potting 8 is for example by a

Matrix material formed of a silicone or an epoxy-silicone hybrid material in which reflective particles are embedded. The reflective particles are preferably titanium dioxide particles or aluminum oxide particles or

Glass particles. Diameter of the particles are preferably between 0.3 μπι and 8 μπι and a

Weight fraction of the particles is preferably between

including 5% and 60%. Exposed appears the

Reflektorverguss 8 with the semiconductor device off a viewer preferably white. Unlike in FIG. 1, it is also possible that the reflector casting 8 does not cover the entire carrier main side 70, but only areas near the semiconductor chips 4, for example the electrical connection points 9a.

Bonding wires for electrical contacting of the semiconductor chips 4, which extend in particular from the main radiation side 40 to the connection points 9b, are not shown in the figures.

All semiconductor chips 4 together, a potting body 6 is arranged downstream. An average thickness d of the potting body 6 is between 100 μπι and 800 μπι. In one

Matrix material of the potting body 6 are particles of a

Embedded in the conversion agent. The conversion means may be the same conversion means as in the first conversion element 11 or one thereof

different conversion agent. The particles of the

Conversion agent in the potting 6 and / or in the conversion elements 11, 22 preferably have middle

Diameter between 1 μπι and 15 μπι,

in particular between 3 μπι and 10 μπι on. A weight proportion of the particles on the potting body 6 is in particular between 5% and 25% inclusive.

Due to the fact that the second conversion element 22 is located close to the carrier 7 and no conversion of blue light to red light takes place in the potting body 6, efficient heat dissipation of the second conversion element 22 can be realized. If the conversion means of the potting body 6 is a conversion means other than the conversion means of the first conversion element 11, then the conversion means preferably has a maximum emission at wavelengths smaller by between 5 nm and 15 nm than the first conversion element 11. In other words then the potting 6 short-wavelength and further lying in the blue radiation than the first conversion element 11th

Particular preference is given to the potting 6 scattering particles, for example, the average diameter between including 1 μπι and 15 μπι or between 3 μπι and 10 μπι have. The scattering particles are in particular formed from a silicon dioxide such as cristobalite and / or from a glass. A refractive index difference between the scattering particles and the matrix material of the potting body 6 is preferably at most 0.05 at room temperature. The potting body 6 has a planar, the carrier 7 facing away from the top. Furthermore, the potting body 6 is directly on the reflector potting 8 and on the conversion elements 11, 22 and the semiconductor chip 4 of the third light source third

applied.

Through the reflector casting 8 are in particular the

electrical connections 9a, 9b covered and not visible from outside the semiconductor device 10. Furthermore, the radiation generated in the semiconductor chips 4 becomes the first one

Light source 1 and the second light source 2 almost

completely steered into the conversion elements 11, 22. By reflector casting 8 so a homogenization of the external appearance when switched off

Semiconductor device 10 and an increase in efficiency during operation can be achieved. By the potting 6 a more uniform light distribution along the lateral direction L in the operation of the semiconductor device 10 and a

more uniform, angle-dependent emission of the mixed light.

An overlap of the connection points 9a, 9b by the

Reflektorverguss 8 can be seen in Figure IC, however, in Figure 1B, the Reflektorverguss 8 and the potting 6 are not shown. By the potting 6 with the

Scattering particles, contours of the light sources 1, 2, 3 in plan view, see Figure IC, appear out of focus. When the semiconductor device 10 is switched off, the potting body 6 in plan view appear whitish-green or greenish or yellowish.

The particles of the conversion agent in the potting body 6 are preferably absorbent for blue light and preferably only scattered for red and green light. Both

Matrix materials of the potting body 6, the

Reflektorvergusses 8 and the conversion elements 11, 22 may each be the same material to a good adhesion of said components to each other

achieve.

The light sources 1, 2, 3 are independent of each other

electrically controllable and their light mixes in the operation of the semiconductor device 10 to a mixed light, preferably white light and in terms of color temperature

is tunable.

The semiconductor chips 4 of the light sources 1, 2, 3 are

comparatively far apart from each other, around one

To avoid overheating of the semiconductor device 10. A smallest rectangle into which the semiconductor chips 4 of all

Light sources 1, 2, 3 can be inscribed in plan view, has dimensions of at least 1.5 mm x 1.5 mm, in particular of at least 2.1 mm x 2.1 mm or of

at least 4.3mm x 4.3mm.

FIG. 2 shows a further exemplary embodiment of the invention

Semiconductor device 10 shown. In Figure 2A is a

Sectional view and in Figure 2B is a plan view without the Reflektorverguss 8 and without the potting 6 to see.

Unlike the embodiment according to FIG. 2, the second light source 2 according to FIG red spectral region emitting semiconductor chip 5,

for example, a light-emitting diode based on InGaAlP formed. The second light source 2 is thus free of a conversion element. The light sources 1, 2, 3 are, in

Seen in plan, arranged differently than according to FIG. 1. The reflector casting 8 terminates, flush in a direction parallel to the main emission direction M, with the main radiation sides 40 of the semiconductor chips 4, 5. In the embodiment of the semiconductor device 10 according to

Figure 3, shown in a schematic sectional view, the potting 6 is designed simultaneously as an optical element 60 in the form of a converging lens. By adding the conversion agent and preferably the scattering particles into the potting body 6 is then a particularly homogeneous,

angle-dependent radiation characteristic achievable since

in particular the path length of blue light in the

Potting body 6 is almost independent of an emission angle of the light sources 1, 2, 3. The mean thickness d of the

Potting body 6 is preferably between 200 μπι and 1800 μπι.

The conversion elements 11, 22 project beyond the semiconductor chips 4 in the lateral direction L and partially cover the reflector potting 8. The potting body 6 is not in direct contact with the semiconductor chips 4. Contrary to what is shown, it is alternatively possible that the

Conversion elements 11, 22 do not completely cover the main radiation sides 40 and the main radiation sides 40 of the semiconductor chips 4 of the first and / or second light source 1, 2 are in direct contact with the reflector casting 8 and are covered by it.

In the sectional view of the semiconductor device 10 according to FIG. 4, it can be seen that the reflector casting 8 extends along the main emission direction M flush with the side facing away from the carrier 7 of the conversion elements 11, 22 terminates. In order to prevent the semiconductor chips 4 of the third light source 3, not shown in FIG

Reflektorverguss 8 are covered, the semiconductor chips 4 may be a silicon wafer with a thickness of the conversion elements 11, 22 downstream, said silicone plate is then free of a conversion agent. A side facing the carrier 7 of the potting body 6 is flat. The side facing away from the carrier 7 of the potting body 6 is stepped in cross section.

The invention described here is not by the

Description limited to the embodiments.

Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

This patent application claims the priority of German Patent Application 10 2010 055 265.8, the disclosure of which is hereby incorporated by reference.

Claims

claims

1. Optoelectronic semiconductor device (10) with

- a green, white or white-green light

emitting first light source (1) having a semiconductor chip (4) emitting in the blue spectral region and a first conversion element (11) which is attached directly to the semiconductor chip (4),

- A second light source (2) emitting red light with a light emitting in the blue spectral range

Semiconductor chip (4) and with a second

Conversion element (22), directly on the

Semiconductor chip (4) is mounted, and / or with a semiconductor chip (5) emitting in the red spectral region,

- A blue light emitting, third light source (3) with a semiconductor chip emitting in the blue spectral region (4), and

a potting body (6) with a matrix material in which a conversion agent is embedded,

wherein the potting body (6) is arranged downstream of the light sources (1, 2, 3).

2. Optoelectronic semiconductor device (10) according to the

previous claim,

in which the first conversion element (11) to

is set up, the light of the semiconductor chip (4) of the first light source (1) to a maximum of 70%

convert,

and wherein the potting body (6) is adapted to light the light emitting in the blue spectral range

Semiconductor chips (4) of the first and the third

Light source (1, 3) each to at least 5%

convert.

3. Optoelectronic semiconductor component (10) according to one of the preceding claims,

at the front of the light of the first light source (1)

Entry into the potting body (6) has a color location in the CIE standard color chart with 0.1 <c _x ^ 0.31 and with

0.1 <c _y <0, 32,

wherein the semiconductor device (10) in operation emits white mixed light having a correlated color temperature of between 2300 K and 7000 K inclusive.

Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which the conversion agent of the potting (6) in the form of particles having a mean diameter between 1 μπι and 15 μπι present, the particles for blue light absorbing and scattering for red and green light.

in which the potting body (6), in addition to the

Conversion agent, additionally comprises scattering particles, wherein a refractive index difference between the

Matrix material and the scattering particles in a

Temperature of 300 K is at most 0.10.

in which the potting body (6) has an average thickness (d) of between 200 μπι and 800 μπι, wherein the particles of the conversion agent and / or the scattering particles in each case homogeneously in the entire

Potting body (6) are distributed.

7. Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which the potting body (6) and the first

Conversion element (11) contain the same conversion agent in different volume concentrations.

8. Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which the potting body (6) and the first

Conversion element (11) and the second

Conversion element (22) each from each other

contain different conversion agents.

9. Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which all the semiconductor chips (4, 5) of the light sources (1, 2, 3) in the lateral direction (L) are each surrounded at least in places by a reflector casting (8),

wherein the potting body (6) the reflector Verguss (8) along a main radiation direction (M) of the

Semiconductor component (10) arranged downstream and at least in places directly on the Reflektorverguss (8) and on the semiconductor chip (4) of the third

Light source (3) and on the first conversion element (11) and / or on the second conversion element (22) is applied.

10. Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which the reflector casting (8), in a direction parallel to the main emission direction (M) and with a tolerance of at most 15 μπι, flush with Radiation main sides (40) of the semiconductor chips (4, 5) of the light sources (1, 2, 3) terminates.

in which the reflector casting (8) appears white and has reflector particles,

wherein the reflector potting (8) and the potting body (6) have the same matrix material.

12. Optoelectronic semiconductor component (10) according to one of the preceding claims,

in which all the semiconductor chips (4, 5) of the light sources (1, 2, 3) on a common carrier (7) in one

common plane are appropriate,

wherein the semiconductor chips (4, 5) are distributed over an area of at least 1.5 x 1.5 mm ^.

in which the light sources (1, 2, 3) independently

electrically controllable from each other, wherein the correlated color temperature of the semiconductor component (10) emitted during operation of white mixed light

is tunable.

in which all semiconductor chips (4) of the light sources (1, 2, 3) are identical to one another,

wherein at least one of the light sources (1, 2, 3) comprises at least two semiconductor chips (4).