DE102016100723B4 - optoelectronic component - Google Patents

Abstract

Optoelectronic component (1) comprising
- A layer sequence (2) with an active layer which emits electromagnetic primary radiation in the UV range to the blue range of the electromagnetic spectrum during operation of the component;
- a first conversion element (3) which is arranged in the beam path of the electromagnetic primary radiation (S), the first conversion element (3) comprising a first and a second converter material which at least partially converts the electromagnetic primary radiation into electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum and convert
- a second conversion element (4) which is arranged in the beam path of the electromagnetic primary radiation (S), wherein the second conversion element (4) comprises a third converter material which at least partially converts the electromagnetic primary radiation into electromagnetic secondary radiation in the blue-green range of the electromagnetic spectrum with a Peak wavelength converted between 460 nm and 520 nm.

Description

The invention relates to an optoelectronic component.

Optoelectronic components such as light-emitting diodes (LEDs) often have conversion elements with a converter material. Converter materials convert all or part of the radiation emitted by a radiation source into radiation with a different, for example longer, wavelength. A blue-emitting semiconductor chip and converter materials emitting in the green and red spectral range are often used to generate white light. White light is created by superimposing the blue, green and red radiation. The problem here is that there is a spectral gap in the emission spectrum in the green-blue range of the electromagnetic spectrum, in which no or only very little light is emitted. This results in a reduction in the color rendering index compared to the reference light source. In addition, depending on the angle of emission, the blue light of the semiconductor chip has a different relative intensity compared to the converted part of the LED spectrum, which leads to a different color impression for the viewer depending on the viewing angle of the optoelectronic component.

Attempts have hitherto been made to increase the emission in the blue-green region by using a phosphor, for example a garnet phosphor, with an emission in the deep green region of the electromagnetic spectrum. A nitridic phosphor with an emission in the red spectral range is used, for example, as the second phosphor. The emission of the red phosphor can be shifted to shorter wavelengths to a certain extent in order to achieve a greater overlap with the eye sensitivity curve, but this also reduces the emission in the red to deep red spectral range and thus degrades the color rendering of red hues. However, the shift in the peak wavelength of both phosphors to shorter wavelengths is limited, so that the blue-green spectral range is only inadequately covered with this solution as well.

The color homogeneity as a function of the viewing angle can be increased, for example, by adding scattering particles to the conversion element, so that the blue light emitted by the semiconductor chip has largely the same relative intensity due to scattering at different emission angles. However, this only leads to a slight improvement in the color homogeneity and also to a loss in efficiency of the optoelectronic component, since the converted radiation is also scattered and the probability of the occurrence of, for example, scattering losses and reabsorption losses generally increases. The arrangement of scattering particles above the conversion element leads to a lower loss of efficiency, but this is still not negligible.

document DE 10 2006 020 529 A1 relates to an optoelectronic component. document DE 10 2012 109 650 A1 relates to a ceramic conversion element, an optoelectronic semiconductor element and a method for producing a ceramic conversion element. document DE 10 2013 106 519 A1 relates to an arrangement for generating mixed light and a method for operating an arrangement of mixed light.

The object of at least one embodiment of the present invention is therefore to provide an optoelectronic component with improved properties with regard to the color rendering index, the color homogeneity and the efficiency compared to the prior art.

The object is achieved by an optoelectronic component having the features of claim 1, which also defines the invention.

Advantageous developments and developments of the present invention are specified in the respective dependent claims.

In the following, parts of the description and drawings relating to embodiments not covered by the claims are not presented as embodiments of the invention, but as examples useful for understanding the invention.

An optoelectronic component is specified. The optoelectronic component comprises a layer sequence with an active layer, which emits primary electromagnetic radiation when the component is in operation. It is possible for the component to comprise one or more further layer sequences.

In this context, “layer sequence” means a layer sequence comprising more than one layer, for example a sequence of a p-doped and an n-doped semiconductor layer, the layers being arranged one above the other and containing at least one active layer, the primary electromagnetic radiation emitted.

The layer sequence can be an epitaxial layer sequence or a radiation-emitting semiconductor chip with an epitaxial layer sequence, ie be designed as an epitaxially grown semiconductor layer sequence. In this case, the layer sequence can be embodied on the basis of InGaAlN, for example. InGaAlN-based semiconductor chips and semiconductor layer sequences are, in particular, those in which the epitaxially produced semiconductor layer sequence has a layer sequence made up of different individual layers, which contains at least one individual layer which is a material from the III-V compound semiconductor material system In _x Al _y Ga _1-xy N with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1. Semiconductor layer sequences, which have at least one active layer based on InGaAlN, can emit electromagnetic radiation in an ultraviolet to blue wavelength range, for example.

In addition to the active layer, the active semiconductor layer sequence can include other functional layers and functional areas, such as p- or n-doped charge carrier transport layers, i.e. electron or hole transport layers, undoped or p- or n-doped confinement, cladding or waveguide layers, barrier layers, planarization layers , Buffer layers, protective layers and/or electrodes and combinations thereof. Furthermore, one or more mirror layers can be applied, for example, to a side of the semiconductor layer sequence that is remote from the growth substrate. The structures described here, relating to the active layer or the further functional layers and areas, are known to the person skilled in the art in particular with regard to design, function and structure and are therefore not explained in more detail at this point.

In one embodiment, the primary radiation emitted by the active layer of the layer sequence is in the near UV range to the blue range of the electromagnetic spectrum. In the near UV range, this can mean that the emitted primary radiation has a dominant wavelength between 380 nm and 420 nm inclusive. In the blue range of the electromagnetic spectrum it can mean that the emitted primary radiation has a dominant wavelength between 420 nm and 460 nm inclusive.

In one embodiment, the active layer of the layer sequence emits an electromagnetic primary radiation with a dominant wavelength between 380 nm and 460 nm inclusive during operation of the component.

The dominant wavelength is the monochromatic wavelength that produces the same color impression as a polychromatic light source. In the CIE color space, the line connecting a point for a given color and the point (X = 0.333; Y = 0.333) can be extrapolated to meet the outline of space in at most two points. The intersection point closer to said color represents the dominant wavelength of the color as the wavelength of the pure spectral color at that intersection point. So the dominant wavelength is the wavelength that is perceived by the human eye. In general, the dominant wavelength deviates from a wavelength of maximum intensity, the peak wavelength. In particular, the dominant wavelength in the blue spectral range is at longer wavelengths than the wavelength of maximum intensity.

In one embodiment of the optoelectronic component, it has a first conversion element. The first conversion element is arranged in the beam path of the primary electromagnetic radiation. The layer sequence preferably has a radiation exit surface over which the first conversion element is arranged.

The fact that a layer or an element is arranged or applied “on” or “over” another layer or another element can mean here and in the following that one layer or one element is in direct mechanical and/or electrical contact disposed on the other layer or element. Furthermore, it can also mean that the one layer or the one element is arranged indirectly on or above the other layer or the other element. Further layers and/or elements can then be arranged between one or the other layer or between one or the other element.

In this case, the radiation exit surface is a main surface of the layer sequence. The radiation exit area extends in particular parallel to a main extension plane of the semiconductor layers of the layer sequence. For example, at least 75% or 90% of the radiation leaving the layer sequence emerges from the layer sequence via the radiation exit surface.

In one embodiment, the first conversion element comprises a first and a second converter material, which at least partially convert the electromagnetic primary radiation into electromagnetic secondary radiation during operation of the component.

In one embodiment, the first and the second converter material at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum.

The fact that the electromagnetic secondary radiation is in the green spectral range of the electromagnetic spectrum means that the converter material has an emission with at least one peak wavelength in the green spectral range. The green spectral range is the range of the electromagnetic spectrum between 520 nm and 580 nm.

The fact that the electromagnetic secondary radiation is in the red spectral range of the electromagnetic spectrum means that the converter material has an emission with at least one peak wavelength in the red spectral range. The area of the electromagnetic spectrum between 580 nm and 780 nm is understood as the red spectral range.

Here and in the following, a wavelength is referred to as a peak wavelength at which the spectral intensity distribution, ie the intensity distribution as a function of the wavelength, of the respective electromagnetic radiation has an intensity maximum. This can also be the only intensity maximum of the spectral intensity distribution. However, the spectral intensity distribution can also have secondary maxima. In particular, the spectral intensity distribution has a global maximum at the peak wavelength.

In one embodiment, the optoelectronic component includes a second conversion element, which is arranged in the beam path of the electromagnetic primary radiation.

In one embodiment, the second conversion element comprises a third converter material which, during operation of the component, at least partially converts the primary electromagnetic radiation of the active layer of the layer sequence into secondary electromagnetic radiation in the blue-green range of the electromagnetic spectrum. In the blue-green range can mean that the emitted secondary radiation has a peak wavelength between 460 nm and 520 nm inclusive.

In one embodiment, the third converter material converts the primary electromagnetic radiation at least partially into an electromagnetic secondary radiation with at least one peak wavelength between 460 nm and 520 nm inclusive, preferably between 470 nm and 510 nm inclusive, particularly preferably between 480 nm and 500 nm inclusive electromagnetic spectrum.

In one embodiment, the optoelectronic component is a light-emitting diode, preferably a white light-emitting diode.

In one embodiment, the optoelectronic component comprises a layer sequence with an active layer which, during operation of the component, emits primary electromagnetic radiation in the near UV range to the blue range of the electromagnetic spectrum. Furthermore, the optoelectronic component includes a first conversion element, which is arranged in the beam path of the electromagnetic primary radiation, wherein the first conversion element includes a first and a second converter material. During operation of the component, the first and the second converter material at least partially convert the electromagnetic primary radiation into electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum. The optoelectronic component includes a second conversion element, which is arranged in the beam path of the electromagnetic primary radiation, the second conversion element including a third converter material. The third converter material at least partially converts the primary electromagnetic radiation into secondary electromagnetic radiation in the blue-green range of the electromagnetic spectrum.

In one embodiment, the component comprises at least one further first and/or second conversion element.

As in 1 shown, typical emission spectra of a white light-emitting diode have only a very low emission in the blue-green spectral range, i.e. between 460 nm and 520 nm of the electromagnetic spectrum. This can also be referred to as the "spectral gap", "blue-green gap" or "cyan gap" between the blue and green spectral range. So far, this color range has only been covered insufficiently, which results in a lowering of the color rendering index compared to the reference light source. In order to compensate for this reduction in the color rendering index, a converter material that emits in the long-wave red range has been used to date. What is disadvantageous about this solution is that the deep-red portion of the white light that is generated as a result is perceived as dark by the human eye, since deep-red light is in a range of low eye sensitivity.

The inventive use of a third converter material with an emitted secondary radiation in the blue-green spectral range increases the emission in this range and thus the spectral gap between the blue and the green spectral range closed or significantly reduced. The color rendering index can thus advantageously be increased, or a converter material with a shorter peak wavelength in the red spectral range can be used in the first conversion element while maintaining the color rendering index. The use of a converter material with a shorter peak wavelength in the red spectral range has the advantage that the peak wavelength is closer to 555 nm and therefore fewer losses that are beyond the sensitivity of the eye occur. The maximum eye sensitivity is at 555 nm. This increases the efficiency of the optoelectronic component. In addition, the brightness of the emitted light is increased by the conversion of the primary radiation into a secondary radiation in the green-blue range of the electromagnetic spectrum, since the eye sensitivity in this range is higher than in the near UV range or in the blue spectral range.

In one embodiment, the optoelectronic component emits white light during operation. The white light results from a superimposition of the primary radiation and the secondary radiation or at least predominantly from a superimposition of the secondary radiation when the primary radiation is completely or almost completely converted into secondary radiation.

In one embodiment, the optoelectronic component emits white light with a color rendering index of at least 65, preferably at least 70, in particular at least 80.

The conversion of the near UV or blue primary radiation of the active layer of the layer sequence into a secondary radiation with a somewhat longer wavelength in the blue-green range of the electromagnetic spectrum increases the efficiency of the optoelectronic component. Compared to the primary radiation, the peak wavelength of the secondary radiation is closer to the maximum of eye sensitivity at 555 nm, which means that the emitted light has a higher overlap with the eye sensitivity curve and is therefore perceived as brighter. In contrast to the primary radiation, the secondary radiation in the blue-green range also has an even intensity distribution over the radiation angle and thus a homogeneous radiation characteristic. This advantageously increases the color homogeneity of the optoelectronic component, so that the use of scattering particles is no longer necessary. In addition, the efficiency losses of the component due to the scattering of the primary and secondary radiation are greatly reduced.

According to one embodiment, the third converter material consists of at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and/or Mg and 0<y≦0.15, preferably 0 <y≦0.1, particularly preferably 0<y≦0.05 and/or at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with AE=Sr, Ba, Ca and/or Mg and 0<z≦0.15, preferably 0<z≦0.1, particularly preferably 0<z≦0.05 formed or comprises or consists of at least one of these phosphors.

In one embodiment, Eu equals Eu ²⁺ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ , with 0<y≦0.15, EA=Ba _1-x E _x with E=Sr, Ca and/or Mg and 0≦x<1, preferably 0≦x<0.5, particularly preferably 0≦x<0 ,25. The following preferably applies: E=Sr and/or Ca and 0≦x<1. The following particularly preferably applies: E=Sr and/or Ca and 0≦x<0.5. The following is particularly preferred: E=Sr and/or Ca and 0≦x≦0.25. The third converter material can also consist of a phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ and has a peak wavelength of between 460 nm and 520 nm inclusive, preferably between 470 nm and 510 nm inclusive and particularly preferably between 480 nm and 500 nm inclusive.

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ and has a full width at half maximum (FWHM) of ≦70 nm, preferably ≦50 nm and particularly preferably ≦40 nm.

In one embodiment, the third converter material is formed from at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ It has a peak wavelength of around 500 nm, which is in the blue-green region of the electromagnetic spectrum. The phosphor has a full width at half maximum (FWHM) of about 25 nm and advantageously shows no absorption above 500 nm, so that the secondary radiation in the red and green range is not absorbed by the third converter material, which would lead to efficiency losses . The value for the half-width may vary slightly depending on the measurement method used. The third converter material can also consist of a phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ or comprises at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ , with 0 <z≦0.15, AE=Sr _1-v A _v with A=Ba, Ca and/or Mg and 0≦v≦1, preferably 0≦v≦0.5, particularly preferably 0≦v≦0.25 . The third converter material can also consist of a phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ or comprises at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ and has a Peak wavelength between 460 nm up to and including 520 nm, preferably between 470 nm up to and including 510 nm and particularly preferably between 480 nm up to and including 500 nm. The third converter material can also consist of the phosphor (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ and has a full width at half maximum (FWHM) ≦90 nm, preferably ≦80 nm and particularly preferably ≦70 nm.

In one embodiment, the third converter material is formed from at least one phosphor of the formula (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ . This phosphor has a peak wavelength of around 490 to 495 nm and is therefore in the blue-green region of the electromagnetic spectrum. The phosphor has a half width of about 60 nm and advantageously shows no absorption above 500 nm, so that the secondary radiation in the red and green range is not absorbed by the third converter material, which would lead to efficiency losses. The third converter material can also consist of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the first or second converter material is selected from a group of phosphors having a peak wavelength in the green spectral range that includes β-SiAlONe, α-SiAlONe, chlorosilicate, orthosilicate, silicon oxynitride (SiONe), garnet, and combinations thereof.

It is possible that the first or second converter material comprises one or more phosphors with a peak wavelength in the green spectral range or consists of one or more phosphors with a peak wavelength in the green spectral range.

According to one embodiment, the garnet phosphor can be selected from the material system (Y,Lu,Gd,Ce) ₃ (Al,Ga) ₅ O ₁₂ or (Y,Lu,Gd,Ce) ₃ (Al) ₅ O ₁₂ . The garnet phosphor is preferably selected from the material system (Y,Lu,Ce) ₃ Al ₅ O ₁₂ and (Y,Lu,Ce) ₃ (Al,Ga) ₅ O ₁₂ . For example, the phosphor is YAl ₅ O ₁₂ .

The material systems specified here and below for the phosphors are not to be understood strictly mathematically with regard to the molecular formulas. On the contrary, the phosphor can still be grouped under the molecular formulas given if additional materials, for example impurities, are present to a small extent. In the case of garnet phosphors, for example, the oxygen can be replaced to a small extent by materials such as N, F, Cl, Br.

The α-SiAlONs can have the following molecular formula, for example: M _x Si _12-(m+n) Al _(m+n) O _n N _16-n :Eu with M=Ca, Mg, Y, preferably Ca.

The chlorosilicates can have the following molecular formula, for example: (Ca,Sr,Ba,Eu)Mg(SiO ₄ ) ₄ Cl ₂ .

• (EA*_1-x,Eu_x,)Si₂O₂N₂ mit 0<x'≤0,2, bevorzugt 0<x'≤0,15,
• besonders bevorzugt 0,02≤x'≤0,15 und EA* = Sr, Ca, Ba und/oder Mg. Bevorzugt ist (Sr_1-x'-y'EA*_y'Eu_x')Si₂O₂N₂ mit EA* = Ba, Ca und/oder Mg und 0 ≤ y' < 0,5.

The silicon oxynitrides can have the following molecular formula, for example:

• (EA* _1-x ,Eu _x ,)Si ₂ O ₂ N ₂ with 0<x'≤0.2, preferably 0<x'≤0.15,
• particularly preferably 0.02≦x'≦0.15 and EA*=Sr, Ca, Ba and/or Mg. (Sr _1-x'-y' EA* _y' Eu _x ')Si ₂ O ₂ N is preferred ₂ with EA* = Ba, Ca and/or Mg and 0 ≤ y'< 0.5.

It is possible that the first or second converter material comprises one or more phosphors with a peak wavelength in the red spectral range or consists of one or more phosphors with a peak wavelength in the red spectral range.

According to one embodiment, the first or second converter material comprises at least one nitridosilicate phosphor with a peak wavelength in the red spectral range. In particular, the nitridosilicate phosphor can be selected from the material systems (Ca,Sr,Ba,Eu) ₂ (Si,Al) ₅ (N, O) ₈ , (Ca,Sr,Ba,Eu)AlSi(N,O) ₃ ,(Ca,Sr,Ba,Eu)AlSi(N,O) ₃ .Si ₂ N ₂ O, (Ca,Sr,Ba,Eu ) ₂ Si ₅ N ₈ , (Ca, Sr, Ba, Eu)AlSiN ₃ and combinations thereof.

Furthermore, the first or second converter material can be selected from a material system with a peak wavelength in the red spectral range, which is described in the patent application PCT/EP2014/071544 is described, the disclosure content of which is hereby incorporated by reference in its entirety.

In one embodiment, the first or second converter material has a phosphor with a peak wavelength in the red spectral range of the molecular formula A ₂ [SiF ₆ ]:Mn ⁴⁺ with A=Li, Na, K, Rb, Cs, for example K ₂ SiF ₆ :Mn ⁴⁺ .

The phosphors with a peak wavelength in the red spectral range can also fall under the specified material systems if they contain additional materials such as impurities to a small degree. Such additional materials can be, for example, F, Cl, Br, C, O, B, Al.

In one embodiment, the first converter material comprises a phosphor of the formula (Ca,Sr,Ba,Eu) ₂ (Si,Al) ₅ (N,O) ₈ , (Ca,Sr,Ba,Eu)AlSi(N,O) ₃ , (Ca, Sr, Ba, Eu) AlSi (N, O) ₃ Si ₂ N ₂ O, (Ca, Sr, Ba, Eu) ₂ Si ₅ N ₈ , (Ca, Sr, Ba, Eu) AlSiN ₃ and/or K ₂ SiF ₆ :Mn ⁴⁺ , the second converter material comprises a phosphor of the formula (Y,Lu,Ce) Al ₅ O ₁₂ and/or (Y,Lu,Ce) ₃ (Al,Ga) ₅ O ₁₂ and the third converter material comprises a phosphor of the formula (EA _1-y Eu _y )Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and/or Mg and 0 < y ≤ 0.15, and/or (AE _{1 -z} Eu _z ) ₄ Al ₁₄ O ₂₅ with AE = Sr, Ba, Ca and/or Mg and 0 < z ≤ 0.15, for example Ba _1-y Eu _y Si ₂ N ₂ O ₂ or (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the second conversion element is arranged downstream of the first conversion element in the beam path of the primary electromagnetic radiation. This means that the electromagnetic primary radiation first strikes the first conversion element and then the second conversion element. In this embodiment, the secondary radiation generated in the first conversion element passes through the second conversion element before it is coupled out to the environment. In this embodiment, only the primary radiation that was not converted by the first and second converter material is therefore partially or completely absorbed and re-emitted by the third converter material. Advantageously, the secondary radiation in the green and red range is not absorbed by the third converter material, which can thus pass through the second conversion element with little or no absorption loss. By arranging the second conversion element in the beam path of the primary radiation after the first conversion element, at least the surface of the second conversion element facing away from the layer sequence emitted secondary radiation in the blue-green range of the third converter material can be avoided by the first and the second converter material. It is thus possible for at least 50% of the secondary radiation of the third converter material to be radiated outwards into the environment.

In one embodiment, the primary radiation is almost completely converted by the first, the second and the third converter material. This means that only a small proportion of primary radiation is emitted to the outside environment. In particular, this embodiment is advantageous when the primary radiation is radiation in the near UV range. In particular, the conversion of the primary radiation is over 80%, preferably over 90%. In this embodiment, one can also speak of a full conversion. Due to the uniform intensity distribution of the emitted secondary radiation over the emission angle, the optoelectronic component has a homogeneous emission characteristic, ie the color locus of the white light does not change or hardly changes depending on the viewing angle. In addition, the emitted secondary radiation is in the blue-green range and thus has a larger overlap with the eye sensitivity curve compared to the primary radiation.

In one embodiment, the primary radiation is partially converted by the first, the second and the third converter material. This means that a portion of the primary radiation is radiated outwards to the environment. In particular, this embodiment is advantageous when the primary radiation is radiation in the blue spectral range. In this embodiment, one can also speak of a partial conversion. In this embodiment, the spectral range can advantageously be covered in the blue and blue-green range and thus the reproduction of the blue colors can be improved.

In one embodiment, the first conversion element is arranged above the layer sequence and the second conversion element is arranged above the first conversion element. In particular, the first and the second conversion element are arranged above the radiation exit area of the layer sequence.

In one embodiment, the first conversion element has direct mechanical contact with the layer sequence, in particular with the radiation exit area of the layer sequence.

In one embodiment, the first and the second converter material are homogeneously distributed in the first conversion element.

In one embodiment, the first and the second converter material are distributed with a concentration gradient in the first conversion element. In particular, the concentration of the first and second converter material is higher in the region of the first conversion element that is spatially closer to the radiation exit surface of the layer sequence. This embodiment is particularly preferred if the first conversion element is a potting or a part of the potting of the layer sequence, since the heat generated by the conversion can be dissipated very well here via the layer sequence.

In one embodiment, the second conversion element has direct mechanical contact with the first conversion element.

In one embodiment, the third converter material is homogeneously distributed in the second conversion element.

In one embodiment, the first conversion element and/or the second conversion element is/are arranged over the entire surface of the layer sequence, in particular the radiation exit surface of the layer sequence.

In one embodiment, the first converter material converts the primary electromagnetic radiation during operation of the component at least partially into secondary electromagnetic radiation in the red spectral range of the electromagnetic spectrum, and the second converter material converts the primary electromagnetic radiation at least partially into secondary electromagnetic radiation in the green spectral range of the electromagnetic spectrum.

In one embodiment, the first conversion element comprises a first area and a second area. The first area includes the first converter material and the second area includes the second converter material.

According to one embodiment, the second area is arranged after the first area in the beam path of the electromagnetic primary radiation. This means that the electromagnetic primary radiation first penetrates through the first area of the first conversion element and then through the second area of the first conversion element. In this embodiment, the secondary radiation generated in the first area of the first conversion element passes through the second area of the first conversion element before it is coupled out to the environment. In particular, the first converter material at least partially converts the primary electromagnetic radiation during operation of the component into secondary electromagnetic radiation in the red spectral range of the electromagnetic spectrum, and the second converter material at least partially converts the primary electromagnetic radiation into secondary electromagnetic radiation in the green spectral range of the electromagnetic spectrum. In this way, at least one absorption of the secondary radiation in the green range of the electromagnetic spectrum, which emerges from the surface of the second region facing away from the layer sequence, can be avoided by the first converter material.

If the first and/or the second converter material comprises or consists of a plurality of phosphors, the first area and/or the second area can be divided into two or more sub-areas.

In one embodiment, the phosphor with a shorter peak wavelength is arranged after the phosphor with a longer peak wavelength in order to reduce absorption losses.

For example, the first converter material consists of two phosphors with a peak wavelength in the red spectral range. One phosphor can then be arranged in a first sub-area and the second in a second sub-area which is arranged over the first sub-area. The electromagnetic primary radiation thus first penetrates through the first sub-area of the first conversion element and then through the second sub-area of the first conversion element. In particular, the phosphor with a shorter peak wavelength is arranged in the second sub-region.

It is also possible for the second converter material to consist of two phosphors with a peak wavelength in the green spectral range. One phosphor can then be arranged in a first sub-area and the second in a second sub-area which is arranged over the first sub-area. The electromagnetic primary radiation thus first penetrates through the first sub-area of the first conversion element and then through the second sub-area of the first conversion element. In particular, the phosphor with a shorter peak wavelength is arranged in the second sub-region.

In one embodiment, the first, second and/or third converter material are particles of the corresponding material.

The particles of the converter materials can, independently of one another, have an average particle size of between 1 μm and 50 μm, preferably between 5 μm and 40 μm, particularly preferably between 8 μm and 35 μm, very particularly preferably between 8 μm and 30 μm. With these grain sizes, the primary radiation or the secondary radiation is advantageously not scattered at these particles, which would lead to losses in efficiency. In addition, due to the conversion of the primary radiation into a blue-green secondary radiation, it is advantageously no longer necessary to scatter the primary radiation, since a homogeneous or largely homogeneous emission characteristic is already obtained by converting the primary radiation into the secondary radiation in the blue-green range.

In one embodiment, the first and/or the second conversion element comprises a matrix material. The converter materials can be distributed in the matrix material, for example they are distributed homogeneously in the matrix material.

The matrix material is transparent both for the primary radiation and for the secondary radiation and is selected, for example, from a group of materials consisting of: glasses, silicones, epoxy resins, polysilazanes, polymethacrylates and polycarbonates and combinations thereof.

In one embodiment, the first conversion element consists of the first and the second converter material or of the first and the second converter material and the matrix material.

In one embodiment, the second conversion element consists of the third converter material or of the third converter material and the matrix material.

In one embodiment, the first and/or the second conversion element is designed as a small plate.

In one embodiment, the platelet has a thickness of 1 μm to 1 mm, preferably 10 μm to 150 μm, particularly preferably 25 μm to 100 μm.

The layer thickness of the entire platelet can be uniform. In this way, a constant color locus can be achieved over the entire surface of the plate.

In one embodiment, the first and/or the second conversion element can be a ceramic plate. This means that the small plate consists of particles of the respective converter material that have been sintered together.

In one embodiment, the lamina comprises a matrix material, for example glass, in which the first and the second or the third converter material is embedded. The lamina can also consist of the matrix material, for example glass, and the first and second or the third converter material. Silicones, epoxy resins, polysilazanes, polymethacrylates and polycarbonates and combinations thereof are also possible as matrix materials for the small plate.

According to one embodiment, the first and/or the second conversion element is designed as a small plate that is arranged above the layer sequence.

The first conversion element can be formed as a lamina and attached directly to the layer sequence. It is possible for the small plate to completely cover the entire surface, in particular the radiation exit area of the layer sequence.

The optoelectronic component can include a housing. There may be a recess in the center of the housing. The layer sequence can be fitted in the recess. It is also possible for one or more further layer sequences to be fitted in the recess.

It is possible for the recess to be filled with an encapsulation covering the layer sequence. However, the recess can also consist of an air space.

In one embodiment, the first and/or second conversion element is/are arranged above the recess of the housing. In this embodiment, in particular, there is no direct and/or form-fitting contact of the first and/or second conversion element with the layer sequence. This means that there can be a distance between the first and/or second conversion element and the layer sequence. In other words, the first and/or second conversion element is arranged downstream of the layer sequence and is illuminated by the primary radiation. A potting or an air gap can then be formed between the and/or second conversion element and the layer sequence.

In one embodiment, the first conversion element is part of an encapsulation of the layer sequence or the first conversion element forms the encapsulation.

In one embodiment, the second conversion element is part of an encapsulation of the layers follow or the second conversion element forms the encapsulation.

In one embodiment, the first and the second conversion element form the encapsulation.

In one embodiment, the first conversion element and/or the second conversion element is formed as one layer. The layer can be arranged above the radiation exit area of the layer stack or above the radiation exit area and the side areas of the layer stack.

In one embodiment, the component has a lens. The lens can be arranged over the second conversion element.

• 1 zeigt das Emissionsspektrum eines weiß emittierenden optoelektronischen Bauelements aus dem Stand der Technik,
• 2 und 3 zeigen Emissionsspektren verschiedener weiß emittierender optoelektronischer Bauelemente,
• 4 zeigt Abstrahlwinkel eines weißen lichtemittierenden optoelektronischen Bauelements aus dem Stand der Technik,
• 5 zeigt Abstrahlwinkel einer Ausführungsform eines hier beschriebenen optoelektronischen Bauelements,
• 6 bis 12 zeigen schematische Seitenansichten verschiedener Ausführungsformen von hier beschriebenen optoelektronischen Bauelementen.

Further advantageous embodiments and developments of the invention result from the exemplary embodiments described below in connection with the figures.

• 1 shows the emission spectrum of a white-emitting optoelectronic component from the prior art,
• 2 and 3 show emission spectra of various white-emitting optoelectronic components,
• 4 shows the emission angle of a white light-emitting optoelectronic component from the prior art,
• 5 shows the emission angle of an embodiment of an optoelectronic component described here,
• 6 until 12 show schematic side views of different embodiments of optoelectronic components described here.

In the exemplary embodiments and figures, components that are the same or have the same effect are each provided with the same reference symbols. The elements shown and their proportions to one another are not to be regarded as true to scale; on the contrary, individual elements, in particular layer thicknesses, may be exaggerated for better understanding.

In 1 a typical emission spectrum of a white light emitting diode is shown. The wavelength λ in nm is plotted on the x-axis and the relative intensity I is plotted on the y-axis. As can be seen, the emission in the blue-green spectral range, i.e. between 460 nm and 510 nm of the electromagnetic spectrum, is very low. This "spectral gap" between the blue and the green spectral range is marked by the dashed circle. This blue-green color range, in which the sensitivity of the eye is significantly higher compared to the blue emission at around 450 nm, has so far only been covered insufficiently, which results in a lowering of the color rendering index.

In the 2 and 3 Emission spectra of white light-emitting diodes are shown. The emission spectra provided with the reference symbol E1 result from light-emitting diodes with a blue-emitting semiconductor chip and a conversion element, in which a red and a green-emitting converter material are homogeneously distributed. The emission spectra provided with the reference symbol E2 result from light-emitting diodes with a blue-emitting semiconductor chip and a conversion element, in which a green-emitting converter material is arranged downstream of a red-emitting converter material in the conversion element. In these configurations, the blue primary radiation of the semiconductor chip first hits the red and then the green converter material. As can be seen, the arrangement of the green converter material in the beam path of the primary radiation after the red converter material already leads to an increase in emission in the blue-green spectral range, since absorption losses of the green secondary radiation are reduced by the red converter material. By using a second conversion element with a third converter material, which emits secondary radiation in the blue-green range during operation of the light-emitting diode, the emission in the blue-green range is again significantly increased. In addition, the color rendering index can be increased while retaining the red and green-emitting converter material. By increasing the emission in the blue-green range, a converter material with a peak wavelength shifted to shorter wavelengths in the red spectral range can also be used to advantage without the color rendering index being reduced, since this is compensated for by the emission in the blue-green range. A higher overlap with the eye sensitivity curve also increases the efficiency of the component.

In 4A A schematic side view of a white light emitting diode is shown. A layer sequence 2 is arranged on a substrate 10 . The layer sequence 2 has an active layer (not shown), which emits primary radiation in the blue spectral range P _b during operation of the light-emitting diode. The blue primary radiation P _b is partially radiated outwards to the environment and partially absorbed by a first and a second converter material in the first conversion element 3 and as secondary radiation in the red range of the electromagnetic spectrum S _r and as secondary radiation in the green Area of the electromagnetic spectrum S _g radiated to the outside. Superimposed, the primary radiation P _b , the secondary radiation S _r and S _g create a white luminous impression for the viewer. The primary radiation P _b of the layer sequence is radiated outwards with a different intensity depending on the radiation angle. This angle-dependent intensity difference is the result of the different path lengths of the primary radiation through the conversion element 3 and the different absorption losses associated therewith. Toward flatter emission angles, the path length through the conversion element 3 increases, which leads to a reduction in intensity, while at a perpendicular emission angle the intensity of the radiation is at its maximum due to the shortest path length and the associated low absorption losses. This leads to an elliptical intensity distribution of the primary radiation that is coupled out. The secondary radiation S _r and S _g , on the other hand, are coupled out directly from the conversion element 3 and therefore show a spherically symmetrical intensity distribution of the radiation, ie a Lambertian radiation distribution.

Due to the inhomogeneous intensity distribution of the radiated radiation depending on the angle of radiation, there is a change in the perceived color of the white light depending on the viewing angle of the light-emitting diode. The blue portion of the white light decreases towards flatter angles. This problem becomes particularly noticeable when the ratio of primary radiation coupled out to secondary radiation coupled out is high, for example when cold white light with a high blue component is to be coupled out. this is in 4B shown. The viewing angle in ° is plotted on the x-axis and the change in y in the CIE color space is plotted on the y-axis.

In 5A A schematic side view of a white light emitting diode is shown. A layer sequence 2 is arranged on a substrate 10 . The layer sequence 2 has an active layer (not shown), which emits primary radiation in the blue spectral range P _b during operation of the light-emitting diode. The blue primary radiation P _b is absorbed by a first and a second converter material in the first conversion element 3 and radiated outwards as secondary radiation in the red range of the electromagnetic spectrum S _r and as secondary radiation in the green range of the electromagnetic spectrum S _g . In addition, the blue primary radiation P _b is absorbed by a third converter material in the second conversion element 4 and emitted to the outside as secondary radiation in the blue-green range of the electromagnetic spectrum S _c . Superimposed, the secondary radiation S _r , S _g and S _c produce a white luminous impression for the viewer. Due to the third converter material according to the invention in the second conversion element 4, which is arranged after the first conversion element 3 in the beam path of the primary radiation, the secondary radiation in the blue-green range S _c also has a circularly symmetrical intensity distribution of the radiation.

Due to the now uniform intensity distribution of the emitted secondary radiation, the color locus of the white light changes only slightly depending on the viewing angle. this is in 5B shown. A slight change can still be seen, since the primary radiation P _b is always radiated to a certain extent to the outside. As a result, the use of scattering particles in the conversion elements can advantageously be dispensed with.

The optoelectronic component 1 according to FIG 6 has a layer sequence 2 which is arranged on a substrate 10 . The substrate 10 can be reflective, for example. A first conversion element 3 in the form of a layer is arranged over the layer sequence 2 . The layer sequence 2 has an active layer (not shown) which, during operation of the optoelectronic component, emits primary radiation in the blue or near-UV spectral range, for example with a dominant wavelength of 420 to 460 nm or 380 to 420 nm. The first conversion element 3 comprises a matrix material, such as a silicone and a first and a second converter material, which partially convert the primary radiation into secondary radiation in the red and green range of the electromagnetic spectrum during operation of the component. The first and the second converter material are homogeneously distributed in the first conversion element 3 in the matrix material within the scope of the manufacturing tolerance. The first conversion element 3 is applied over the entire area over the radiation exit surface 2a of the layer sequence 2 and over the side surfaces of the layer sequence 2 and is in direct mechanical contact with the radiation exit surface 2a of the layer sequence 2 and the side surfaces of the layer sequence 2 . The primary radiation can also exit via the side surfaces of the layer sequence 2. A second conversion element 4 is arranged downstream of the first conversion element 3 in the beam path of the primary radiation S. The second conversion element 4 is formed as a layer and comprises a matrix material such as a silicone and particles of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with 0≦z<0.15 with an average grain size of 10 μm third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. The third converter material converts the primary radiation during operation of the component partially into a secondary radiation in the blue-green range of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 460 and 520 nm. The second conversion element 4 is applied over the entire surface over the radiation exit surface 2a of the layer sequence 2 and over the side surfaces of the layer sequence 2 and is in direct mechanical contact with the first conversion element 3 on its main surface and side surfaces . The conversion elements 3, 4 can be applied by injection molding, transfer molding or by spray coating methods. In addition, the component has electrical contacts (not shown), the design and arrangement of which is known to those skilled in the art. The component 1 emits white light during operation. In particular, more than 90% of the primary radiation is converted, so that only a small proportion of the primary radiation is coupled out to the outside. This leads to a homogeneous radiation characteristic of the secondary radiation and thus to a constant or almost constant color impression of the white light depending on the viewing angle. The third converter material increases the emission in the blue-green range and thus closes or significantly reduces the spectral gap between the blue and the green spectral range. This can advantageously increase the color rendering index. In addition, it is also possible to illuminate objects with a blue-green color using this optoelectronic component.

In 7 a further exemplary embodiment of an optoelectronic component 1 is shown. Compared to 6 the first conversion element 3 is formed as a small plate. The platelet can consist of particles of the first and second converter material sintered together and thus be a ceramic platelet or the platelet consists, for example, of glass, silicone, epoxy resin, polysilazane, polymethacrylate or polycarbonate with particles of the first and second converter material embedded therein. The first conversion element 3 is applied over the entire area over the radiation exit area 2a of the layer sequence 2 . In particular, no primary radiation exits via the side surfaces of the layer sequence 2, but predominantly via the radiation exit surface 2a. The first conversion element 3 can be applied to the layer sequence 2 via an adhesive layer (not shown), for example made of silicone. The second conversion element 4 is applied over the entire surface over the radiation exit surface 2a of the layer sequence 2 and over the side surfaces of the layer sequence 2 and is in direct mechanical contact with the first conversion element 3 on its main surface and side surfaces.

In 8th a further exemplary embodiment of an optoelectronic component 1 is shown. The layer sequence 2 is arranged in the recess of a housing 11 . Compared to the component in 7 the second conversion element 4 is formed as a small plate. The platelet can consist of particles of the third converter material sintered together and thus be a ceramic platelet or the platelet consists, for example, of a glass, silicone, epoxy resin, polysilazane, polymethacrylate or polycarbonate with particles of the third converter material embedded therein. The second conversion element 4 is applied over the entire area over the radiation exit area 2a of the layer sequence 2 . The second conversion element 4 can be applied to the first conversion element 3 via an adhesive layer (not shown), for example made of silicone.

The optoelectronic component according to 9 has a housing 11 with a recess. A layer sequence 2 is arranged in the recess, which has an active layer (not shown) which, during operation of the light-emitting diode, emits primary radiation in the near UV or blue range, for example with a dominant wavelength of 380 to 420 nm or 420 to 460 nm. The conversion element 3 is formed as part of an encapsulation of the layer sequence 2 in the recess and comprises a matrix material, such as a silicone and a first and a second converter material, which partially converts the primary radiation into secondary radiation in the red and green range of the electromagnetic spectrum during operation of the component convert spectrum. The first and the second converter material are homogeneously distributed in the first conversion element 3 in the matrix material within the scope of the manufacturing tolerance. It is also possible for the first and the second converter material to be spatially concentrated in the first conversion element 3 above the radiation exit surface 2a. This can be achieved, for example, by sedimentation. With a spatial arrangement of the first and second converter material on the radiation exit surface 2a, the resulting heat can be dissipated better than with a homogeneous distribution due to the low thermal conductivity of the silicone. In the beam path of the primary radiation S, the first conversion element 3 is followed by a second conversion element 4, which is also formed as part of the encapsulation. The second conversion element 4 comprises a matrix material such as a silicone and particles of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with 0≦z<0.15 with an average particle size of 12 μm as the third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. Since the conversion through the third converter material only little heat ent is, a homogeneous embedding in silicone, which only has a low thermal conductivity, is possible. During operation of the component, the third converter material partially converts the primary radiation into secondary radiation in the blue-green range of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 490 and 495 nm. In addition, the component has electrical contacts (not shown), the arrangement and design of which is known to those skilled in the art. The component 1 emits white light during operation. In particular, more than 90% of the primary radiation is converted, so that only a small proportion of the primary radiation is coupled out to the outside. This leads to a homogeneous radiation characteristic of the secondary radiation and thus to a constant or almost constant color impression of the white light depending on the viewing angle. The third converter material increases the emission in the blue-green range and thus closes or significantly reduces the spectral gap between the blue and the green spectral range. This can advantageously increase the color rendering index.

In the optoelectronic component 1 in 10 the layer sequence 2 is arranged in the recess of a housing 11 . A first conversion element 3 is arranged above the layer sequence 2 . The second conversion element 4 is compared to 8th molded as a cast. The encapsulation fills the recess of the housing 11 . The second conversion element 4 comprises a matrix material such as polymethacrylate and particles of the phosphor Ba _1-y Eu _y Si ₂ N ₂ O ₂ with 0≦y<0.15 and an average grain size of 15 μm as the third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. During operation of the component, the third converter material partially converts the primary radiation into secondary radiation in the blue-green range of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 460 and 520 nm.

In the optoelectronic component 1 in 11 has the first conversion element 3 in comparison to the in 8th a first area 3a and a second area 3b. The second area 3b is arranged after the first area 3a in the beam path of the primary electromagnetic radiation S. The first region 3a comprises the first converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum. The second region 3b comprises the second converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into electromagnetic secondary radiation in the green spectral range of the electromagnetic spectrum. At least one absorption of the secondary radiation in the green range of the electromagnetic spectrum, which emerges from the surface of the second region 3b facing away from the layer sequence, can be avoided by the first conversion material in the first region 3a.

In the optoelectronic component 1 in 12 has the first conversion element 3 in comparison to the in 6 a first area 3a and a second area 3b. The second area 3b is arranged after the first area 3a in the beam path of the primary electromagnetic radiation. The first region 3a comprises a matrix material, for example silicone, and the first converter material, which at least partially converts the primary electromagnetic radiation into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum during operation of the component. The second region 3b comprises a matrix material, for example silicone, and the second converter material, which at least partially converts the primary electromagnetic radiation during operation of the component into secondary electromagnetic radiation in the green spectral range of the electromagnetic spectrum. At least one absorption of the secondary radiation in the green range of the electromagnetic spectrum, which emerges from the surface of the second region 3b facing away from the layer sequence, can be avoided by the first conversion material in the first region 3a.

The first conversion elements 3 of the components in the 7 , 9 and 10 can alternatively comprise a first area 3a and a second area 3b, with the second area 3b being arranged downstream of the first area 3a in the beam path of the primary electromagnetic radiation S. The first region 3a comprises the first converter material, which at least partially converts the primary electromagnetic radiation during operation of the component into electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum, and the second region 3b comprises the second converter material, which at least partially converts the electromagnetic primary radiation during operation of the component converted into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum.

Reference List

1

optoelectronic component

2

layer sequence

2a

Radiation exit surface 2a

3

first conversion element

3a

first area

3b

second area

4

second conversion element

10

substrate 10

11

housing 11

pb

primary radiation

I

relative intensity

A

wavelength

E1

emission spectrum

E2

emission spectrum

sir

Secondary radiation in the red part of the electromagnetic spectrum

sg

Secondary radiation in the green part of the electromagnetic spectrum

sc

Secondary radiation in the blue-green region of the electromagnetic spectrum

S

Beam path of the primary radiation

Claims (14)

Optoelectronic component (1) comprising - A layer sequence (2) with an active layer which emits electromagnetic primary radiation in the UV range to the blue range of the electromagnetic spectrum during operation of the component; - a first conversion element (3) which is arranged in the beam path of the electromagnetic primary radiation (S), the first conversion element (3) comprising a first and a second converter material which at least partially converts the electromagnetic primary radiation into electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum and convert - a second conversion element (4) which is arranged in the beam path of the electromagnetic primary radiation (S), the second conversion element (4) comprising a third converter material which at least partially converts the electromagnetic primary radiation into electromagnetic secondary radiation in the blue-green range of the electromagnetic spectrum with a Peak wavelength converted between 460 nm and 520 nm. Optoelectronic component (1) according to the preceding claim, wherein the third converter material at least partially converts the primary electromagnetic radiation into secondary electromagnetic radiation with a peak wavelength of between 470 nm and 510 nm of the electromagnetic spectrum. Optoelectronic component (1) according to one of the preceding claims, wherein the active layer of the layer sequence (2) emits an electromagnetic primary radiation with a dominant wavelength of between 380 nm and 460 nm inclusive during operation. Optoelectronic component (1) according to one of the preceding claims, wherein the second conversion element (4) is arranged downstream of the first conversion element (3) in the beam path of the electromagnetic primary radiation (S). Optoelectronic component (1) according to one of the preceding claims, wherein the component (1) emits white light during operation. Optoelectronic component (1) according to the preceding claim, wherein the color rendering index of the white light is at least 65. Optoelectronic component (1) according to one of the preceding claims, wherein the third converter material consists of at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and/or Mg and 0 < y≦0.15 and/or a phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with AE=Sr, Ba, Ca and/or Mg and 0<z≦0.15. Optoelectronic component (1) according to one of the preceding claims, wherein the third converter material consists of at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ or at least one phosphor of the formula (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ is formed. Optoelectronic component (1) according to one of the preceding claims, wherein the first conversion element (3) has a first region (3a) and a second region (3b), the first region (3a) containing the first converter material and the second region (3b) the second converter material comprises. Optoelectronic component (1) according to the preceding claim, wherein the second region (3b) is arranged after the first region (3a) in the beam path of the electromagnetic primary radiation (S). Optoelectronic component (1) according to one of the preceding claims, wherein the first converter material converts the primary electromagnetic radiation at least partially into secondary electromagnetic radiation in the red spectral range of the electromagnetic spectrum converted and the second converter material converts the primary electromagnetic radiation at least partially into a secondary electromagnetic radiation in the green spectral range of the electromagnetic spectrum. Component (1) according to one of the preceding claims, in which the first (3) and the second conversion element (4) are parts of an encapsulation of the layer sequence (2) or the first (3) and the second conversion element (4) form the encapsulation. Component (1) according to one of Claims 1 until 11 , In which the first conversion element (3) and / or the second conversion element (4) is formed as a layer. Component (1) according to one of Claims 1 until 11 In which the first conversion element (3) and/or the second conversion element (4) is formed as a ceramic platelet or a platelet comprising a matrix material.

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