DE102016100723A1 - Optoelectronic component - Google Patents

Abstract

An optoelectronic component is specified. The component comprises a layer sequence with an active layer, which emits electromagnetic primary radiation in the UV range to the blue region of the electromagnetic spectrum during operation of the component; A first conversion element which is arranged in the beam path of the electromagnetic primary radiation, the first conversion element comprising a first and a second converter material which at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum and a second conversion element , which is arranged in the beam path of the electromagnetic primary radiation, wherein the second conversion element comprises a third converter material which at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the blue-green region of the electromagnetic spectrum.

Description

The invention relates to an optoelectronic component.

Optoelectronic components such as light emitting diodes (LEDs) often have conversion elements with a converter material. Converter materials convert the radiation emitted by a radiation source completely or partially into a radiation with an altered, for example longer, wavelength. For the production of white light, often a blue emitting semiconductor chip and in the green and red spectral region emitting converter materials are used. Overlaying the blue, green and red radiation produces white light. The problem with this is that there is a spectral gap in the emission spectrum in the green-blue region of the electromagnetic spectrum, in which no or only very little light is emitted. This results in a reduction of the color rendering index compared to the reference light source. In addition, depending on the emission angle, the blue light of the semiconductor chip has a different relative intensity compared to the converted part of the LED spectrum, which leads to a different color impression in the viewer, depending on the viewing angle of the optoelectronic component.

So far, an attempt is made to increase the emission in the blue-green range by a phosphor, such as a garnet phosphor, is used with an emission in the deep green region of the electromagnetic spectrum. As the second phosphor, for example, a nitride phosphor having an emission in the red spectral range is used. The emission of the red phosphor can be shifted to shorter wavelengths to some extent to achieve a greater overlap with the eye sensitivity curve, but at the same time the emission in the red to deep red spectral range is reduced and thus the color reproduction of red shades is deteriorated. However, the shift of the peak wavelength of both phosphors is limited to shorter wavelengths, so that even in this solution, the blue-green spectral range is covered only insufficient.

The color homogeneity as a function of the viewing angle can be increased for example by the addition of scattering particles in the conversion element, so that the emitted blue light of the semiconductor chip by scattering at different angles of emission has a substantially equal relative intensity. However, this only leads to a slight improvement in the color homogeneity and also to a loss of efficiency of the optoelectronic component, since the converted radiation is also scattered and in general the probability of the occurrence of, for example, leakage losses and reabsorption losses increases. Although the arrangement of scattering particles over the conversion element leads to a lower loss of efficiency, but still not negligible.

It is therefore an object of at least one embodiment of the present invention to provide an optoelectronic device with improved properties in terms of color rendering index, color homogeneity and efficiency over the prior art.

The object is achieved by an optoelectronic component with the features of claim 1.

Advantageous embodiments and further developments of the present invention are specified in the respective dependent claims.

An optoelectronic component is specified. The optoelectronic component comprises a layer sequence with an active layer, which emits an electromagnetic primary radiation during operation of the component. It is possible that the component comprises one or more further layer sequences.

In this context, "layer sequence" is understood as meaning a layer sequence comprising more than one layer, for example a sequence of a p-doped and an n-doped semiconductor layer, wherein the layers are arranged one above the other and wherein at least one active layer is contained, the primary electromagnetic radiation emitted.

The layer sequence can be embodied as an epitaxial layer sequence or as a radiation-emitting semiconductor chip with an epitaxial layer sequence, that is to say as an epitaxially grown semiconductor layer sequence. In this case, the layer sequence can be implemented, for example, on the basis of InGaAlN. InGaAlN-based semiconductor chips and semiconductor layer sequences are, in particular, those in which the epitaxially produced semiconductor layer sequence has a layer sequence of different individual layers which contains at least one single layer comprising a material of the III-V compound semiconductor material system In _x Al _y Ga _1-xy N with 0 ≦ x ≦ 1, 0 ≦ y ≦ 1 and x + y ≦ 1. Semiconductor layer sequences which comprise at least one InGaAlN-based active layer can, for example, emit electromagnetic radiation in an ultraviolet to blue wavelength range.

The active semiconductor layer sequence can, in addition to the active layer further functional Layers and functional regions include, for example, p- or n-doped charge carrier transport layers, ie electron or hole transport layers, undoped or p- or n-doped confinement, cladding or waveguide layers, barrier layers, planarization layers, buffer layers, protective layers and / or electrodes and combinations it. Furthermore, one or more mirror layers can be applied, for example, on a side of the semiconductor layer sequence facing away from the growth substrate. The structures described here, the active layer or the further functional layers and areas are known to the person skilled in the art in particular with regard to structure, function and structure and are therefore not explained in detail at this point.

In one embodiment, the emitted primary radiation of the active layer of the layer sequence lies in the near UV region to the blue region of the electromagnetic spectrum. In the near UV range, this may mean that the emitted primary radiation has a dominance wavelength of between 380 nm and 420 nm inclusive. In the blue region of the electromagnetic spectrum, it may mean that the emitted primary radiation has a dominant wavelength between 420 nm and 460 nm inclusive.

In one embodiment, during operation of the device, the active layer of the layer sequence emits electromagnetic primary radiation having a dominant wavelength of between 380 nm and 460 nm inclusive.

The dominant wavelength is the monochromatic wavelength which produces the same color impression as a polychromatic light source. In the CIE color space, the line connecting a point for a particular color and the point (X = 0.333; Y = 0.333) can be extrapolated to meet the outline of the space in a maximum of two points. The point of intersection closer to said color represents the dominant wavelength of the color as the wavelength of the pure spectral color at that point of intersection. The dominant wavelength is the wavelength perceived by the human eye. In general, the dominant wavelength deviates from a maximum intensity wavelength, the peak wavelength. In particular, the dominant wavelength in the blue spectral range is at longer wavelengths than the maximum intensity wavelength.

In one embodiment of the optoelectronic component, this has a first conversion element. The first conversion element is arranged in the beam path of the electromagnetic primary radiation. The layer sequence preferably has a radiation exit surface over which the first conversion element is arranged.

The fact that a layer or an element is arranged or applied "on" or "over" another layer or another element can mean here and below that the one layer or the one element is directly in direct mechanical and / or electrical contact is arranged on the other layer or the other element. Furthermore, it can also mean that the one layer or the one element is arranged indirectly on or above the other layer or the other element. In this case, further layers and / or elements can then be arranged between the one or the other layer or between the one or the other element.

The radiation exit surface is a major surface of the layer sequence. The radiation exit surface extends in particular parallel to a main extension plane of the semiconductor layers of the layer sequence. For example, at least 75% or 90% of the radiation leaving the layer sequence emerges from the layer sequence via the radiation exit surface.

In one embodiment, the first conversion element comprises a first and a second converter material which at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the component.

In one embodiment, the first and the second converter material at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum.

The fact that the electromagnetic secondary radiation lies in the green spectral range of the electromagnetic spectrum means that the converter material has an emission with at least one peak wavelength in the green spectral range. The green spectral range is understood to be the range of the electromagnetic spectrum between 520 nm and 580 nm.

The fact that the electromagnetic secondary radiation lies in the red spectral range of the electromagnetic spectrum means that the converter material has an emission with at least one peak wavelength in the red spectral range. The red spectral range is understood to be the range of the electromagnetic spectrum between 580 nm and 780 nm.

The peak wavelength is here and below a wavelength at which the spectral intensity distribution, that is to say the intensity distribution as a function of the wavelength, of the respective electromagnetic radiation has an intensity maximum. This may also be the only intensity maximum of the spectral intensity distribution. However, the spectral intensity distribution can also have secondary maxima. In particular, the spectral intensity distribution at the peak wavelength has a global maximum.

In one embodiment, the optoelectronic component comprises a second conversion element, which is arranged in the beam path of the electromagnetic primary radiation.

In one embodiment, the second conversion element comprises a third converter material which, during operation of the component, at least partially converts the electromagnetic primary radiation of the active layer of the layer sequence into electromagnetic secondary radiation in the blue-green region of the electromagnetic spectrum. In the blue-green range, this may mean that the emitted secondary radiation has a peak wavelength of between 460 nm and 520 nm inclusive.

In one embodiment, the third converter material at least partially converts the electromagnetic primary radiation into electromagnetic secondary radiation having at least one peak wavelength between 460 nm and 520 nm inclusive, preferably between 470 nm and 510 nm inclusive, more preferably between 480 nm and 500 nm inclusive electromagnetic spectrum.

In one embodiment, the optoelectronic component is a light-emitting diode, preferably a white light-emitting diode.

In one embodiment, the optoelectronic component comprises a layer sequence with an active layer, which emits electromagnetic primary radiation in the near UV range to the blue region of the electromagnetic spectrum during operation of the component. Furthermore, the optoelectronic component comprises a first conversion element, which is arranged in the beam path of the electromagnetic primary radiation, wherein the first conversion element comprises a first and a second converter material. The first and the second converter material convert the electromagnetic primary radiation during operation of the component at least partially into an electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum. The optoelectronic component comprises a second conversion element, which is arranged in the beam path of the electromagnetic primary radiation, wherein the second conversion element comprises a third converter material. The third converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the blue-green region of the electromagnetic spectrum.

In one embodiment, the component comprises at least one further first and / or second conversion element.

As in 1 shown, typical emission spectra of a white light-emitting diode have only a very low emission in the blue-green spectral range, ie between 460 nm and 520 nm of the electromagnetic spectrum. This can also be referred to as the "spectral gap,""blue-greengap," or "cyan gap" between the blue and green spectral regions. Thus, this color range is so far only insufficiently covered, which has a reduction of the color rendering index in comparison to the reference light source result. In order to compensate for this reduction in the color rendering index, a converter material emitting in the long-wave red range has hitherto been used. A disadvantage of this solution is that the deep red portion of the white light generated thereby is perceived by the human eye as dark, because deep red light is in a range of low eye sensitivity.

The inventive use of a third converter material with an emitted secondary radiation in the blue-green spectral range, the emission is increased in this area and thus closed or significantly reduced the spectral gap between the blue and the green spectral range. Thus, the color rendering index can advantageously be increased or, while maintaining the color rendering index, it is possible to use a converter material having a shorter peak wavelength in the red spectral range in the first conversion element. The use of a converter material with a shorter peak wavelength in the red spectral range has the advantage that the peak wavelength is closer to 555 nm and thus fewer losses that are outside the eye sensitivity occur. The maximum of the eye sensitivity is 555 nm. This increases the efficiency of the optoelectronic component. In addition, the conversion of the primary radiation into a secondary radiation in the green-blue region of the electromagnetic spectrum increases the brightness of the emitted light, since the eye sensitivity in this area is higher than in the near UV range or in the blue spectral range.

In one embodiment, the optoelectronic device emits white light during operation. The white light results from a superposition of the primary radiation and the secondary radiation or at least predominantly from a superposition of the secondary radiation when the primary radiation is completely or almost completely converted into secondary radiation.

In one embodiment, the optoelectronic device emits white light having a color rendering index of at least 65, preferably at least 70, in particular at least 80.

The conversion of the near UV or blue primary radiation of the active layer of the layer sequence into a secondary radiation with a slightly longer wavelength in the blue-green region of the electromagnetic spectrum increases the efficiency of the optoelectronic component. The peak wavelength of the secondary radiation is closer to the maximum of the eye sensitivity at 555 nm compared to the primary radiation, whereby the emitted light has a higher overlap with the eye sensitivity curve and thus is perceived as lighter. The secondary radiation in the cyan area also has, in contrast to the primary radiation, a uniform intensity distribution over the emission angles and thus a homogeneous emission characteristic. As a result, the color homogeneity of the optoelectronic component is advantageously increased, so that the use of scattering particles is no longer necessary. In addition, the efficiency losses of the device are greatly reduced by scattering of the primary and secondary radiation.

According to one embodiment, the third converter material is composed of at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and / or Mg and 0 <y ≦ 0.15, preferably 0 <y ≦ 0.1, more preferably 0 <y ≦ 0.05 and / or at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with AE = Sr, Ba, Ca and / or Mg and 0 <z ≦ 0.15, preferably 0 <z ≦ 0.1, more preferably 0 <z ≦ 0.05 is formed or comprises or consists of at least one of these phosphors.

In one embodiment, Eu is Eu ²⁺ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphors of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ , with 0 <y ≦ 0.15, EA = Ba _1-x E _x where E = Sr, Ca and / or Mg and 0 ≦ x <1, preferably 0 ≦ x <0.5, more preferably 0 ≦ x <0 , 25th The following preferably applies: E = Sr and / or Ca and 0 ≦ x <1. Particular preference is given to: E = Sr and / or Ca and 0 ≦ x <0.5. Particularly preferably, E = Sr and / or Ca and 0 ≦ x <0.25. The third converter material can also consist of a phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ and has a peak wavelength of between 460 nm and 520 nm inclusive, preferably between 470 nm and 510 nm inclusive, and more preferably between 480 nm and 500 nm inclusive.

In one embodiment, the third converter material is formed from at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ and has a full width at half maximum (FWHM) of ≦ 70 nm, preferably ≦ 50 nm, and more preferably ≦ 40 nm.

In one embodiment, the third converter material is formed from at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ or comprises at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ . This phosphor has a peak wavelength of about 500 nm and is thus in the blue-green range of the electromagnetic spectrum. The phosphor has a full width at half maximum (FWHM) of about 25 nm and advantageously shows no absorption above 500 nm, so that the secondary radiation in the red and green regions is not absorbed by the third converter material, which would lead to efficiency losses , The value for the half width may vary slightly depending on the measuring method used. The third converter material can also consist of a phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE ₁ -z Eu _z ) ₄ Al ₁₄ O ₂₅ or comprises at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ , with 0 <z ≤ 0.15, AE = Sr _1-v A _v where A = Ba, Ca and / or Mg and 0 ≤ v <1, preferably 0 ≤ v <0.5, more preferably 0 ≤ v <0.25 , The third converter material can also consist of a phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE ₁ -z Eu _z ) ₄ Al ₁₄ O ₂₅ or comprises at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ and has a Peak wavelength between 460 nm and 520 nm inclusive, preferably between 470 nm inclusive up to and including 510 nm and more preferably between 480 nm and 500 nm inclusive. The third converter material may also consist of the phosphor (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the third converter material is formed from at least one phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ and has a full width at half maximum (FWHM) ≤ 90 nm, preferably ≤ 80 nm and especially preferably ≤ 70 nm.

In one embodiment, the third converter material is formed from at least one phosphor of the formula (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ . This phosphor has a peak wavelength of about 490 to 495 nm and is thus in the blue-green range of the electromagnetic spectrum. The phosphor has a half-width of about 60 nm and advantageously shows no absorption above 500 nm, so that the secondary radiation in the red and green regions is not absorbed by the third converter material, which would lead to efficiency losses. The third converter material can also consist of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ consist.

In one embodiment, the first or second converter material is selected from a group of phosphors having a peak wavelength in the green spectral range comprising β-SiAlONs, α-SiAlONs, chlorosilicates, orthosilicates, silicon oxide nitrides (SiONe), garnets, and combinations thereof.

It is possible that the first or second converter material comprises one or more phosphors having a peak wavelength in the green spectral range or consists of one or more phosphors having a peak wavelength in the green spectral range.

The garnet phosphor may according to one embodiment be selected from the material system (Y, Lu, Gd, Ce) ₃ (Al, Ga) ₅ O ₁₂ or (Y, Lu, Gd, Ce) ₃ (Al) ₅ O ₁₂ . The garnet phosphor is preferably selected from the material system (Y, Lu, Ce) ₃ Al ₅ O ₁₂ and (Y, Lu, Ce) ₃ (Al, Ga) ₅ O ₁₂ . For example, the phosphor YAl ₅ O ₁₂ .

The material systems specified here and below for the phosphors are not strictly mathematical in relation to the empirical formulas. Rather, the phosphor can still be taken under the given molecular formulas, if to a lesser degree additional materials, such as impurities, are included. For example, in the case of garnet phosphors, oxygen may be substituted to a lesser extent by materials such as N, F, Cl, Br.

The α-SiAlONs may, for example, have the following empirical formula: M _x Si _{12- (m + n)} Al _{(m + n)} O _n N _16-n : Eu where M = Ca, Mg, Y, preferably Ca.

The chlorosilicates may, for example, have the following empirical formula: (Ca, Sr, Ba, Eu) Mg (SiO ₄ ) ₄ Cl ₂ .

The silicon oxynitrides may have, for example, the following empirical formula:
(EA * _{1-x '} Eu _x' ) Si ₂ O ₂ N ₂ with 0 <x '≤ 0.2, preferably 0 <x' ≤ 0.15, particularly preferably 0.02 ≤ x '≤ 0.15 and EA * = Sr, Ca, Ba and / or Mg. Preference is given to (Sr _{1-x'-y '} EA * _y' Eu _{x '} ) Si ₂ O ₂ N ₂ with EA * = Ba, Ca and / or Mg and 0 ≤ y '<0.5.

It is possible that the first or second converter material comprises one or more phosphors having a peak wavelength in the red spectral range or consists of one or more phosphors having a peak wavelength in the red spectral range.

According to one embodiment, the first or second converter material comprises at least one nitridosilicate phosphor having a peak wavelength in the red spectral range. In particular, the nitridosilicate phosphor can be selected from the material systems (Ca, Sr, Ba, Eu) ₂ (Si, Al) ₅ (N, O) ₈ , (Ca, Sr, Ba, Eu) AlSi (N, O) ₃ , (Ca, Sr, Ba, Eu) AlSi (N, O) ₃ .Si ₂ N ₂ O, (Ca, Sr, Ba, Eu) ₂ Si ₅ N ₈ , (Ca, Sr, Ba, Eu) AlSiN ₃ and combinations thereof.

Furthermore, the first or second converter material can be selected from a material system with a peak wavelength in the red spectral range, which is disclosed in the patent application PCT / EP2014 / 071544 is described, the disclosure of which is hereby incorporated in full in this respect by reference.

In one embodiment, the first or second converter material has a phosphor with a peak wavelength in the red spectral range of the empirical formula A ₂ [SiF ₆ ]: Mn ⁴⁺ with A = Li, Na, K, Rb, Cs, for example K ₂ SiF ₆ : Mn ⁴⁺ .

The phosphors with a peak wavelength in the red spectral range can still fall under the specified material systems, if it has additional materials such as impurities to a low degree. Such additional materials may be, for example, F, Cl, Br, C, O, B, Al.

In one embodiment, the first converter material comprises a phosphor of the formula (Ca, Sr, Ba, Eu) ₂ (Si, Al) ₅ (N, O) ₈ , (Ca, Sr, Ba, Eu) AlSi (N, O) ₃ , (Ca, Sr, Ba, Eu) AlSi (N, O) ₃ .Si ₂ N ₂ O, (Ca, Sr, Ba, Eu) ₂ Si ₅ N ₈ , (Ca, Sr, Ba, Eu) AlSiN ₃ and / or K ₂ SiF ₆ : Mn ⁴⁺ , the second converter material comprises a phosphor of the formula (Y, Lu, Ce) ₃ Al ₅ O ₁₂ and / or (Y, Lu, Ce) ₃ (Al, Ga) ₅ O ₁₂ and the third converter material comprises a phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and / or Mg and 0 <y ≦ 0.15, and / or (AE _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with AE = Sr, Ba, Ca and / or Mg and 0 <z ≦ 0.15, for example, Ba _1-y Eu _y Si ₂ N ₂ O ₂ or (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ .

In one embodiment, the second conversion element is arranged downstream of the first conversion element in the beam path of the electromagnetic primary radiation. This means that the electromagnetic primary radiation first strikes the first conversion element and then the second conversion element. In this embodiment, the secondary radiation generated in the first conversion element passes through the second conversion element before it is decoupled outwards to the environment. In this embodiment, therefore, only the primary radiation is partially or completely absorbed and re-emitted by the third converter material, which has not been converted by the first and second converter material. Advantageously, the secondary radiation is not absorbed in the green and red region of the third converter material, which thus can pass through the second conversion element without or only with very low absorption losses. By arranging the second conversion element in the beam path of the primary radiation after the first conversion element, a conversion of at least the secondary radiation, which is remote from the layer sequence, of the second conversion element in the blue-green region of the third converter material can be avoided by the first and the second converter material. Thus, it is possible that at least 50% of the secondary radiation of the third converter material is radiated to the outside to the environment.

In one embodiment, the primary radiation is almost completely converted by the first, second, and third converter materials. This means that only a small amount of primary radiation is radiated outwards to the environment. In particular, this embodiment is advantageous when the primary radiation is radiation in the near UV range. In particular, the conversion of the primary radiation is more than 80%, preferably more than 90%. In this embodiment can also be spoken of a full conversion. Due to the uniform intensity distribution of the emitted secondary radiation over the emission angle, the optoelectronic component has a homogeneous emission characteristic, that is to say the color location of the white light does not change or hardly changes, depending on the viewing angle. In addition, the emitted secondary radiation is in the cyan area and thus has a greater overlap with the eye sensitivity curve compared to the primary radiation.

In one embodiment, the primary radiation is partially converted by the first, second, and third converter materials. This means that a portion of primary radiation is radiated outwards to the environment. In particular, this embodiment is advantageous when the primary radiation is radiation in the blue spectral range. In this embodiment can also be spoken of a partial conversion. Advantageously, in this embodiment, the spectral range in the blue and blue-green range can be covered and thus the reproduction of the blue colors can be improved.

In one embodiment, the first conversion element are arranged above the layer sequence and the second conversion element is arranged above the first conversion element. In particular, the first and the second conversion element are arranged above the radiation exit surface of the layer sequence.

In one embodiment, the first conversion element has a direct mechanical contact with the layer sequence, in particular with the radiation exit surface of the layer sequence.

In one embodiment, the first and the second converter material are homogeneously distributed in the first conversion element.

In one embodiment, the first and second converter materials having a concentration gradient are distributed in the first conversion element. In particular, the concentration of first and second converter material in the region of the first conversion element which is spatially closer to the radiation exit surface of the layer sequence is higher. This embodiment is particularly preferred when the first conversion element is a potting or part of the encapsulation of the layer sequence, since here the heat resulting from the conversion can be very well dissipated via the layer sequence.

In one embodiment, the second conversion element has a direct mechanical contact with the first conversion element.

In one embodiment, the third converter material is homogeneously distributed in the second conversion element.

In one embodiment, the first conversion element and / or the second conversion element is over the entire surface over the layer sequence, in particular the radiation exit surface of the layer sequence is arranged.

In one embodiment, the first converter material converts the electromagnetic primary radiation during operation of the component at least partially into an electromagnetic secondary radiation in the red spectral region of the electromagnetic spectrum and the second converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the green spectral region of the electromagnetic spectrum.

In one embodiment, the first conversion element comprises a first region and a second region. The first region comprises the first converter material and the second region comprises the second converter material.

According to one embodiment, the second region is arranged downstream of the first region in the beam path of the electromagnetic primary radiation. This means that the electromagnetic primary radiation initially penetrates through the first region of the first conversion element and then through the second region of the first conversion element. In this embodiment, the secondary radiation generated in the first region of the first conversion element passes through the second region of the first conversion element before being outcoupled to the outside. In particular, the first converter material converts the electromagnetic primary radiation during operation of the component at least partially into an electromagnetic secondary radiation in the red spectral region of the electromagnetic spectrum and the second converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the green spectral region of the electromagnetic spectrum. Thus, at least one absorption of the secondary radiation in the green region of the electromagnetic spectrum, which emerges from the surface of the second region facing away from the layer sequence, can be avoided by the first converter material.

If the first and / or the second converter material comprises or consists of a plurality of phosphors, the first area and / or the second area may be subdivided into two or more subregions.

In one embodiment, the phosphor having a shorter peak wavelength is located downstream of the phosphor having a longer peak wavelength to reduce absorption losses.

For example, the first converter material consists of two phosphors with a peak wavelength in the red spectral range. The one phosphor can then be arranged in a first subregion and the second one in a second subregion, which is arranged above the first subregion. The electromagnetic primary radiation thus penetrates first through the first sub-region of the first conversion element and then through the second sub-region of the first conversion element. In particular, the phosphor having a shorter peak wavelength is arranged in the second subregion.

It is also possible that the second converter material consists of two phosphors with a peak wavelength in the green spectral range. The one phosphor can then be arranged in a first subregion and the second one in a second subregion, which is arranged above the first subregion. The electromagnetic primary radiation thus penetrates first through the first sub-region of the first conversion element and then through the second sub-region of the first conversion element. In particular, the phosphor having a shorter peak wavelength is arranged in the second subregion.

In one embodiment, the first, second and / or third converter material are particles of the corresponding material.

The particles of the converter materials may independently of one another have an average particle size between 1 μm and 50 μm, preferably between 5 μm and 40 μm, particularly preferably between 8 μm and 35 μm, very particularly preferably between 8 μm and 30 μm. With these particle sizes, the primary radiation or the secondary radiation is advantageously not scattered on these particles, which would lead to losses in efficiency. Moreover, the conversion of the primary radiation into a blue-green secondary radiation advantageously makes it no longer necessary to scatter the primary radiation, since a homogeneous or substantially homogeneous emission characteristic is already obtained by the conversion of the primary radiation into the secondary radiation in the blue-green area.

In one embodiment, the first and / or the second conversion element comprises a matrix material. The converter materials may be distributed in the matrix material, for example, they are homogeneously distributed in the matrix material.

The matrix material is both transparent to the primary radiation and to the secondary radiation and is for example selected from a group of materials consisting of: glasses, Silicones, epoxy resins, polysilazanes, polymethacrylates and polycarbonates and combinations thereof.

In one embodiment, the first conversion element consists of the first and the second converter material or of the first and the second converter material and the matrix material.

In one embodiment, the second conversion element consists of the third converter material or of the third converter material and the matrix material.

In one embodiment, the first and / or the second conversion element is formed as a small plate.

In one embodiment, the platelet has a thickness of 1 .mu.m to 1 mm, preferably 10 .mu.m to 150 .mu.m, particularly preferably 25 .mu.m to 100 .mu.m.

The layer thickness of the entire plate can be uniform. Thus, a constant color location can be achieved over the entire surface of the platelet.

In one embodiment, the first and / or the second conversion element may be a ceramic plate. By this is meant that the plate consists of sintered together particles of the respective converter material.

In one embodiment, the chip comprises a matrix material, for example glass, in which the first and the second or the third converter material is embedded. The plate may also consist of the matrix material, for example of glass and the first and second or the third converter material. Also suitable as matrix materials for the platelet are silicones, epoxy resins, polysilazanes, polymethacrylates and polycarbonates, and combinations thereof.

According to one embodiment, the first and / or the second conversion element is designed as a small plate, which is arranged above the layer sequence.

The first conversion element may be formed as platelets mounted directly on the layer sequence. It is possible that the plate completely covers the entire surface, in particular the radiation exit surface of the layer sequence.

The optoelectronic component may comprise a housing. In the housing, a recess may be present in the middle. The layer sequence can be mounted in the recess. It is also possible that one or more further layer sequences are mounted in the recess.

It is possible that the recess is filled with a potting covering the layer sequence. The recess may also consist of an airspace.

In one embodiment, the first and / or second conversion element is arranged above the recess of the housing. In particular, in this embodiment, there is no direct and / or positive contact of the first and / or second conversion element with the layer sequence. This means that there can be a gap between the first and / or second conversion element and the layer sequence. In other words, the first and / or second conversion element is arranged downstream of the layer sequence and is illuminated by the primary radiation. Between the and / or second conversion element and the layer sequence can then be formed a potting or an air gap.

In one embodiment, the first conversion element is part of a casting of the layer sequence or the first conversion element forms the casting.

In one embodiment, the second conversion element is part of a casting of the layer sequence or the second conversion element forms the casting.

In one embodiment, the first and the second conversion element form the potting.

In one embodiment, the first conversion element and / or the second conversion element is formed as a layer. The layer may be disposed over the radiation exit surface of the layer stack or over the radiation exit surface and the side surfaces of the layer stack.

In one embodiment, the device has a lens. The lens may be disposed over the second conversion element.

Further advantageous embodiments and developments of the invention will become apparent from the embodiments described below in conjunction with the figures.

1 shows the emission spectrum of a prior art white-emitting optoelectronic device,

2 and 3 show emission spectra of different white emitting optoelectronic devices,

4 shows radiation angle of a white light-emitting optoelectronic component from the prior art,

5 shows radiation angle of an embodiment of an optoelectronic device described here,

6 to 12 show schematic side views of various embodiments of optoelectronic devices described herein.

In the exemplary embodiments and figures, identical or identically acting components are each provided with the same reference numerals. The illustrated elements and their proportions with each other are not to be regarded as true to scale, but individual elements, in particular layer thicknesses, for exaggerated understanding be shown exaggerated.

In 1 is a typical emission spectrum of a white light emitting diode imaged. The wavelength λ is plotted in nm on the x-axis and the relative intensity I on the y-axis. As can be seen, the emission in the blue-green spectral range, ie between 460 nm and 510 nm of the electromagnetic spectrum is very low. This "spectral gap" between the blue and the green spectral range is indicated by the dashed circle. This blue-green color range, in which the eye sensitivity is markedly higher in comparison to the blue emission at approximately 450 nm, is thus hitherto covered only insufficiently, resulting in a lowering of the color rendering index.

In the 2 and 3 Emission spectra of white light emitting diodes are shown. The emission spectra provided with the reference symbol E1 result from light-emitting diodes with a blue-emitting semiconductor chip and a conversion element in which a red and a green-emitting converter material are homogeneously distributed. The emission spectra provided with the reference symbol E2 result from light-emitting diodes with a blue-emitting semiconductor chip and a conversion element, in which a green-emitting converter material is arranged downstream of a red-emitting converter material in the conversion element. The blue primary radiation of the semiconductor chip thus strikes first on the red and then on the green converter material in these arrangements. As can be seen, the arrangement of the green converter material in the beam path of the primary radiation after the red converter material already leads to an increase in the emission in the blue-green spectral range, since absorption losses of the green secondary radiation are reduced by the red converter material. By using a second conversion element with a third converter material which emits a secondary radiation in the blue-green region during operation of the light-emitting diode, the emission in the blue-green region is again significantly increased. In addition, while retaining the red and the green emitting converter material, the color rendering index can be increased. By increasing the emission in the blue-green range, it is also advantageous to use a converter material with a peak wavelength shifted to shorter wavelengths in the red spectral range, without the color rendering index being reduced, since this is compensated by the emission in the blue-green range. Higher overlap with the eye sensitivity curve also increases the efficiency of the device.

In 4A a schematic side view of a white light emitting diode is shown. On a substrate 10 is a layer sequence 2 arranged. The layer sequence 2 has an active layer (not shown) which emits a primary radiation in the blue spectral range P _b during operation of the light-emitting diode. The blue primary radiation P _b is emitted partly to the outside to the environment and partly from a first and a second converter material in the first conversion element 3 absorbed and emitted as secondary radiation in the red region of the electromagnetic spectrum S _r and as secondary radiation in the green region of the electromagnetic spectrum S _g to the outside. Superimposed generate the primary radiation P _b , the secondary radiation S _r and S _g a white light impression in the viewer. The primary radiation P _{b of} the layer sequence is emitted depending on the radiation angle in a different intensity to the outside. This angle-dependent intensity difference is the consequence of the different path length of the primary radiation through the conversion element 3 and the associated different absorption losses. Towards shallower radiation angles, the path length through the conversion element increases 3 to, which leads to a reduction in intensity, while at a vertical radiation angle, the intensity of the radiation due to the shortest path length and associated low absorption losses is maximum. This leads to an elliptical intensity distribution of the decoupled primary radiation. The secondary radiation S _r and S _g , however, are directly from the conversion element 3 coupled outwards and therefore show a spherical symmetric intensity distribution of the radiation, so a Lambertian radiation distribution.

Due to the inhomogeneous intensity distribution of the radiated radiations depending on the emission angle, a change in the perceived color of the white light results, depending on the viewing angle of the light-emitting diode. At shallower angles, the blue portion of the white light decreases. This problem is particularly noticeable when the ratio of decoupled primary radiation to decoupled secondary radiation is high, ie, for example, when cold white light with a high blue content is to be decoupled. This is in 4B shown. On the x-axis the viewing angle is plotted in ° and on the y-axis the change of y in the CIE color space.

In 5A a schematic side view of a white light emitting diode is shown. On a substrate 10 is a layer sequence 2 arranged. The layer sequence 2 has an active layer (not shown) which emits a primary radiation in the blue spectral range P _b during operation of the light-emitting diode. The blue primary radiation P _b is produced by a first and a second converter material in the first conversion element 3 absorbed and emitted as secondary radiation in the red region of the electromagnetic spectrum S _r and as secondary radiation in the green region of the electromagnetic spectrum S _g to the outside. In addition, the blue primary radiation P _b of a third converter material in the second conversion element 4 absorbed and emitted as secondary radiation in the cyan region of the electromagnetic spectrum S _c to the outside. Superimposed on the secondary radiation S _r , S _g and S _c produce a white light impression in the viewer. By the third converter material according to the invention in the second conversion element 4 that is the first conversion element 3 Subordinate in the beam path of the primary radiation, the secondary radiation in the cyan area S _{c has} a circularly symmetrical intensity distribution of the radiation.

Due to the now uniform intensity distribution of the emitted secondary radiations, the color location of the white light changes only slightly depending on the viewing angle. This is in 5B shown. A slight change is still recognizable, since the primary radiation P _{b is} always radiated to a certain extent to the outside. As a result, it is advantageously possible to dispense with the use of scattering particles in the conversion elements.

The optoelectronic component 1 according to 6 has a layer sequence 2 on that on a substrate 10 is arranged. The substrate 10 may be formed, for example, reflective. Over the layer sequence 2 is a first conversion element 3 arranged in the form of a layer. Die Die Schichtfolge 2 has an active layer (not shown), which emits a primary radiation in the blue or near-UV spectral range, for example, with a dominant wavelength of 420 to 460 nm or from 380 to 420 nm during operation of the optoelectronic component. The first conversion element 3 comprises a matrix material, such as a silicone and a first and a second converter material, which partially convert the primary radiation during operation of the device into secondary radiation in the red and green regions of the electromagnetic spectrum. The first and second converter materials are in the first conversion element 3 homogeneously distributed in the matrix material within the manufacturing tolerance. The first conversion element 3 is above the radiation exit surface 2a the sequence of layers 2 and over the side surfaces of the layer sequence 2 Applied over the entire surface and communicates with the radiation exit surface 2a the sequence of layers 2 and the side surfaces of the layer sequence 2 in direct mechanical contact. The primary radiation can also over the side surfaces of the layer sequence 2 escape. The first conversion element 3 is in the beam path of the primary radiation S a second conversion element 4 downstream. The second conversion element 4 is formed as a layer and comprises a matrix material, such as a silicone and particles of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with 0 ≤ z <0.15 with a mean grain size of 10 microns as a third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. The third converter material partially converts the primary radiation during operation of the component into secondary radiation in the blue-green region of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 460 and 520 nm. The second conversion element 4 is above the radiation exit surface 2a the sequence of layers 2 and over the side surfaces of the layer sequence 2 applied over the entire surface and communicates with the first conversion element 3 on its major surface and side surfaces in direct mechanical contact. The conversion elements 3 . 4 can be applied by injection molding, transfer molding or spray coating. In addition, the component has electrical contacts (not shown) whose design and arrangement is known to the person skilled in the art. The component 1 emits white light during operation. In particular, the primary radiation is converted to over 90%, so that only a small amount of primary radiation is coupled outwards. This leads to a homogeneous Abstrahlcharakterisik the secondary radiation and thus to a constant or almost constant color impression of the white light depending on the viewing angle. The third converter material increases the emission in the blue-green range and thus closes or significantly reduces the spectral gap between the blue and the green spectral range. This can with Advantage of the color rendering index can be increased. It is also possible to illuminate objects with a blue-green color with this optoelectronic component.

In 7 is another embodiment of an optoelectronic device 1 shown. Compared to 6 is the first conversion element 3 shaped as platelets. The platelet may consist of sintered-together particles of the first and the second converter material and thus be a ceramic platelet or the platelet consists for example of a glass, silicone, epoxy resin, polysilazane, polymethacrylate or polycarbonate with particles of the first and the second converter material embedded therein. The first conversion element 3 is above the radiation exit surface 2a the sequence of layers 2 applied over the entire surface. In particular, no primary radiation passes over the side surfaces of the layer sequence 2 out, but mainly on the radiation exit surface 2a , The first conversion element 3 can on the layer sequence via an adhesive layer (not shown), for example made of silicone 2 be upset. The second conversion element 4 is above the radiation exit surface 2a the sequence of layers 2 and over the side surfaces of the layer sequence 2 applied over the entire surface and communicates with the first conversion element 3 on its major surface and side surfaces in direct mechanical contact.

In 8th is another embodiment of an optoelectronic device 1 shown. The layer sequence 2 is in the recess of a housing 11 arranged. Compared to the device in 7 is the second conversion element 4 shaped as platelets. The platelet can consist of sintered-together particles of the third converter material and thus be a ceramic platelet or the platelet consists for example of a glass, silicone, epoxy resin, polysilazane, polymethacrylate or polycarbonate with particles of the third converter material embedded therein. The second conversion element 4 is above the radiation exit surface 2a the sequence of layers 2 applied over the entire surface. The second conversion element 4 can via an adhesive layer (not shown), for example made of silicone, on the first conversion element 3 be upset.

The optoelectronic component according to 9 has a housing 11 with a recess. In the recess is a layer sequence 2 arranged, which has an active layer (not shown) which emits a primary radiation in the near UV or blue region, for example, with a dominant wavelength of 380 to 420 nm or 420 to 460 nm in the operation of the light emitting diode. The conversion element 3 is as part of a casting of the layer sequence 2 formed in the recess and comprises a matrix material, such as a silicone and a first and a second converter material, which partially convert the primary radiation during operation of the device into a secondary radiation in the red and green regions of the electromagnetic spectrum. The first and second converter materials are in the first conversion element 3 homogeneously distributed in the matrix material within the manufacturing tolerance. It is also possible that the first and the second converter material in the first conversion element 3 spatially above the radiation exit surface 2a are concentrated. This can be achieved, for example, by sedimentation. In a spatial arrangement of the first and second converter material at the radiation exit surface 2a The resulting heat can be better derived than in a homogeneous distribution due to the low thermal conductivity of the silicone. The first conversion element 3 is in the beam path of the primary radiation S a second conversion element 4 downstream, which is also designed as part of the potting. The second conversion element 4 comprises a matrix material, such as a silicone and particles of the phosphor (Sr _1-z Eu _z ) ₄ Al ₁₄ O ₂₅ with 0 ≤ z <0.15 with a mean grain size of 12 microns as the third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. Since only little heat is produced during the conversion by the third converter material, a homogeneous embedding in silicone, which has only a low thermal conductivity, is possible. The third converter material partially converts the primary radiation during operation of the component into secondary radiation in the blue-green region of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 490 and 495 nm. In addition, the component has electrical contacts (not shown) whose arrangement and design are known to the person skilled in the art. The component 1 emits white light during operation. In particular, the primary radiation is converted to over 90%, so that only a small amount of primary radiation is coupled outwards. This leads to a homogeneous Abstrahlcharakterisik the secondary radiation and thus to a constant or almost constant color impression of the white light depending on the viewing angle. The third converter material increases the emission in the blue-green range and thus closes or significantly reduces the spectral gap between the blue and the green spectral range. This can be increased with advantage the color rendering index.

In the optoelectronic component 1 in 10 is the layer sequence 2 in the recess of a housing 11 arranged. Over the layer sequence 2 is a first conversion element 3 arranged. The second conversion element 4 is in the Compared to 8th formed as a potting. The casting fills the recess of the housing 11 out. The second conversion element 4 comprises a matrix material, such as polymethacrylate and particles of the phosphor Ba _1-y Eu _y Si ₂ N ₂ O ₂ with 0 ≤ y <0.15 and a mean grain size of 15 microns as a third converter material. The particles of the third converter material are homogeneously distributed in the matrix material within the manufacturing tolerance. The third converter material partially converts the primary radiation during operation of the component into secondary radiation in the blue-green region of the electromagnetic spectrum. The peak wavelength of the secondary radiation is between 460 and 520 nm.

In the optoelectronic component 1 in 11 indicates the first conversion element 3 compared to the in 8th a first area 3a and a second area 3b on. The second area 3b is the first area 3a downstream in the beam path of the electromagnetic primary radiation S. The first area 3a comprises the first converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum. The second area 3b comprises the second converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into an electromagnetic secondary radiation in the green spectral range of the electromagnetic spectrum. Thus, at least one absorption of the secondary radiation in the green region of the electromagnetic spectrum, that of the surface of the second region facing away from the layer sequence 3b exit, through the first conversion material in the first area 3a be avoided.

In the optoelectronic component 1 in 12 indicates the first conversion element 3 compared to the in 6 a first area 3a and a second area 3b on. The second area 3b is the first area 3a downstream in the beam path of the electromagnetic primary radiation. The first area 3a comprises a matrix material, for example silicone and the first converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum. The second area 3b comprises a matrix material, for example silicon and the second converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into an electromagnetic secondary radiation in the green spectral range of the electromagnetic spectrum. Thus, at least one absorption of the secondary radiation in the green region of the electromagnetic spectrum, that of the surface of the second region facing away from the layer sequence 3b exit, through the first conversion material in the first area 3a be avoided.

Also the first conversion elements 3 of the components in the 7 . 9 and 10 Alternatively, you can create a first area 3a and a second area 3b include, wherein the second area 3b the first area 3a in the beam path of the electromagnetic primary radiation S is arranged downstream. The first area 3a The first converter material, which converts the electromagnetic primary radiation during operation of the component at least partially into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum, and the second region 3b comprises the second converter material, which at least partially converts the electromagnetic primary radiation during operation of the component into an electromagnetic secondary radiation in the red spectral range of the electromagnetic spectrum.

The invention described here is not limited by the description with reference to the embodiments, but rather the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the claims, even if this feature or combination itself is not explicitly described in the Claims or embodiments is given.

LIST OF REFERENCE NUMBERS

1

 optoelectronic component

2

 layer sequence

2a

Radiation exit area 2a

3

 first conversion element

3a

 first area

3b

 second area

4

 second conversion element

10

substratum 10

11

casing 11

P _b

 primary radiation

I

 relative intensity

λ

 wavelength

E1

 emission spectrum

E2

 emission spectrum

S _r

 Secondary radiation in the red region of the electromagnetic spectrum

S _g

 Secondary radiation in the green area of the electromagnetic spectrum

S _c

 Secondary radiation in the blue-green area of the electromagnetic spectrum

S

 Beam path of the primary radiation

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• EP 2014/071544 [0053]

Claims (15)

Optoelectronic component ( 1 ) comprising - a layer sequence ( 2 ) with an active layer which emits in the operation of the device electromagnetic primary radiation in the UV range to the blue region of the electromagnetic spectrum; A first conversion element ( 3 ), which is arranged in the beam path of the electromagnetic primary radiation (S), wherein the first conversion element ( 3 ) comprises a first and a second converter material which at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the green and red spectral range of the electromagnetic spectrum and - a second conversion element ( 4 ), which is arranged in the beam path of the electromagnetic primary radiation (S), wherein the second conversion element ( 4 ) comprises a third converter material which at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the blue-green region of the electromagnetic spectrum. Optoelectronic component ( 1 ) according to the preceding claim, wherein the third converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation having a peak wavelength between 460 nm and 520 nm of the electromagnetic spectrum. Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the third converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation having a peak wavelength between 470 nm and 510 nm of the electromagnetic spectrum. Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the active layer of the layer sequence ( 2 ) emits in operation a primary electromagnetic radiation having a dominant wavelength between 380 nm inclusive and 460 nm inclusive. Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the second conversion element ( 4 ) the first conversion element ( 3 ) is arranged downstream in the beam path of the electromagnetic primary radiation (S). Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the component ( 1 ) emits white light during operation. Optoelectronic component ( 1 ) according to the preceding claim, wherein the color rendering index of the white light is at least 65. Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the third converter material consists of at least one phosphor of the formula (EA _1-y Eu _y ) Si ₂ N ₂ O ₂ with EA = Sr, Ba, Ca and / or Mg and 0 <y ≦ 0, 15 and / or a phosphor of the formula (AE _1-z Eu _z ) ₄ Al ₁₄ O _{25 is formed} with AE = Sr, Ba, Ca and / or Mg and 0 <z ≤ 0.15. Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the third converter material from at least one phosphor of the formula Ba _1-y Eu _y Si ₂ N ₂ O ₂ or at least one phosphor of the formula (Sr _1-z Eu _z ) ₄ Al ₁₄ O _{25 is} formed , Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the first conversion element ( 3 ) a first area ( 3a ) and a second area ( 3b ), the first region ( 3a ) the first converter material and the second region ( 3b ) comprises the second converter material. Optoelectronic component ( 1 ) according to the preceding claim, wherein the second area ( 3b ) the first area ( 3a ) is arranged downstream in the beam path of the electromagnetic primary radiation (S). Optoelectronic component ( 1 ) according to one of the preceding claims, wherein the first converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the red spectral region of the electromagnetic spectrum and the second converter material at least partially converts the electromagnetic primary radiation into an electromagnetic secondary radiation in the green spectral region of the electromagnetic spectrum. Component ( 1 ) according to one of the preceding claims, in which the first ( 3 ) and the second conversion element ( 4 ) Parts of a casting of the layer sequence ( 2 ) or the first one ( 3 ) and the second conversion element ( 4 ) form the casting. Component ( 1 ) according to one of claims 1 to 12, in which the first conversion element ( 3 ) and / or the second conversion element ( 4 ) is formed as a layer. Component ( 1 ) according to one of claims 1 to 12, in which the first conversion element ( 3 ) and / or the second conversion element ( 4 ) as a ceramic plate or a plate comprising a matrix material is formed.

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