DE102014221173A1 - The radiation source module - Google Patents

Abstract

In a projection exposure system (1), at least one auxiliary radiation source (32i) is provided to compensate for variations in a main radiation source (4).

Description

The invention relates to a radiation source module for a projection exposure system. The invention further relates to a lighting device and a lighting system for a projection exposure system. Moreover, the invention relates to a scanner for a projection exposure system and a projection exposure system. Finally, the invention relates to a method for producing a micro- or nanostructured component as well as a component produced by this method.

When exposing a wafer in a projection exposure apparatus, it is desirable that the radiation dose reaching the wafer can be controlled very accurately and quickly. There is therefore a continuing need to improve a radiation source module for a projection exposure system or a lighting device and / or an illumination system for a projection exposure system, in particular for a projection scanner with multiple scanners.

This object is achieved by a radiation source module with at least one main radiation source and at least one auxiliary radiation source, which serves to compensate for variations in the main radiation source. Also fluctuations in the transmission of a scanner can be compensated with such a radiation source module.

The fluctuations of the main radiation source may be power fluctuations and / or geometric fluctuations. Variations in the direction of the illumination radiation emitted by the main radiation source and / or fluctuations in the cross-sectional profile of the illumination radiation emitted by the main radiation source are understood as geometric variations.

Both the at least one main radiation source and the at least one auxiliary radiation source contribute to the illumination of a reticle in an object plane and / or the imaging of the reticle onto a wafer in an image plane.

The at least one main radiation source may in particular be a free-electrode laser (FEL) and / or a synchrotron radiation source.

In particular, it can be an EUV radiation source, ie a radiation source which emits illumination radiation in the EUV range, in particular in the range of 30 nm or less, in particular 13.5 nm or less.

The main radiation source can be illumination radiation having a radiation power in the range from 100 W to 50 kW, in particular at least 300 W, in particular at least 500 W, in particular at least 1 kW, in particular at least 3 kW, in particular at least 5 kW, in particular at least 10 kW, in particular at least Emit 30 kW.

According to the invention, it has been recognized that fluctuations of the main radiation source can be compensated in a simple manner with the aid of at least one auxiliary radiation source.

The radiation source module can be used particularly advantageously in a projection exposure system with a plurality of scanners. It may be particularly advantageous to assign one or more auxiliary radiation sources to a particular scanner in each case. In particular, a plurality of auxiliary radiation sources can be provided. In this case, each auxiliary radiation source can be assigned exactly one scanner. It is also possible to assign each scanner at least one auxiliary radiation source. The main radiation source can advantageously supply a plurality of scanners with illumination radiation.

According to one aspect of the invention, a ratio of the radiation power P is _{the main} of the main radiation source for radiation power P _Help an auxiliary radiation source at least 1.5, especially at least 2, especially at least 3, particularly at least 5, especially at least 10, especially at least 20, especially at least 30, in particular at least 50, in particular at least 100, in particular at least 200, in particular at least 300, in particular at least 500, in particular at least 1000.

The total radiation power, that is to say the sum of the radiation powers of the auxiliary radiation sources assigned to a specific scanner, can in particular be just as large as the maximum expected fluctuation of the radiation power of the main radiation source.

The radiation power P of the individual _auxiliary auxiliary radiation source is in particular in the range of 10 mW to 1 kW, in particular in the range from 1 W to 100 W, particularly in the range of 10 W to 30 W.

According to one aspect of the invention, the total power of the auxiliary radiation sources assigned to a single scanner is at most 10%, in particular at most 5%, in particular at most 3%, in particular at most 1% of the total power of the illumination radiation supplied to this scanner by the main radiation source. The latter results in particular from the total power of the at least one main radiation source divided by the number of scanners.

The radiation power P of the individual _auxiliary auxiliary radiation source is in particular in the range from 0.5% to 10%, in particular in the range of 1% to 3%, the power of the main radiation source P _head.

As an auxiliary radiation source is in particular a xenon-plasma source into consideration. As an auxiliary radiation source can also serve a synchrotron radiation source or a plasma source with higher power. Gadolinium or terbium can also be used in a plasma source. In this case, it is possible in particular for an auxiliary radiation source to be assigned to a plurality of scanners.

According to one aspect of the invention, the auxiliary radiation source to a controllable radiation power P _Hilf. It is also possible to control the radiant power, which is provided by the auxiliary radiation source at the output of the radiation source module, in particular at the entrance of a scanner, by means of additional optical elements.

The radiation power P _Hilf used by the auxiliary radiation source to compensate for variations in the main radiation source is controllable, in particular, on a time scale of faster than 1 ms.

The radiation power of the auxiliary radiation source for compensating variations of the main radiation source is in particular dependent on at least one parameter of the main radiation source, in particular depending on the emitted radiation power P _{main of} the main radiation source and / or the direction of the emitted radiation of the main radiation source and / or the divergence of the emitted from the main radiation source Rohstrahls, controllable. The radiation power of the auxiliary radiation source can be regulated in particular as a function of at least one of these parameters. For this purpose, the radiation source module can in particular have one or more sensors for detecting a suitable parameter, in particular the radiation power and / or the direction and / or the cross section of the illumination beam emitted by the main radiation source.

According to a further aspect of the invention, the radiation source module comprises a plurality of auxiliary radiation sources. The number of auxiliary radiation sources may in particular be at least two, in particular at least three, in particular at least five, in particular at least eight, in particular at least ten, in particular at least twelve, in particular at least sixteen, in particular at least thirty, in particular at least fifty. In particular, the number of auxiliary radiation sources can correspond precisely to the number of scanners or an integral multiple of this number.

According to a further aspect of the invention, the individual auxiliary radiation sources are formed substantially identical.

According to a further aspect of the invention, the at least one main radiation source and the at least one auxiliary radiation source are arranged in the radiation path of the illumination radiation on different sides of a coupling-out optical system.

The at least one auxiliary radiation source emits illumination radiation in the same wavelength range as the main radiation source, in particular in the EUV range, in particular in the range of 30 nm or less, in particular 13.5 nm or less.

The object according to the invention is also achieved by an illumination device with at least one auxiliary radiation source for compensating for variations in a main radiation source.

To form the illumination device, it is sufficient if the characteristics of a main radiation source to be provided, in particular its radiation power and the maximum expected fluctuations thereof, are known. These properties can also be specified as requirements for the main radiation source.

According to a further aspect of the invention, the illumination device comprises at least two object fields in which a reticle can be arranged and illuminated, wherein each object field can be illuminated by at least one auxiliary radiation source, and each auxiliary radiation source illuminates at most one object field.

The object is also achieved by a lighting system with a radiation source module according to the preceding description and by a lighting system with a lighting device according to the preceding description.

The illumination system comprises, in addition to the radiation source module, at least one beam guidance optics for transferring illumination radiation into a reticle plane. The illumination system may in particular comprise a plurality of such beam guiding optics.

Starting from the illumination device, the illumination system also comprises at least one main radiation source.

According to a further aspect of the invention, the at least one auxiliary radiation source is in each case part of a control loop. In particular, the control loop comprises an energy sensor for detecting the radiant energy or radiant power supplied to a specific scanner, in particular a given object field. The energy sensor can be arranged in particular in or in the vicinity of the reticle plane.

The energy sensor and thus the control loop is in particular scanner-specific. In particular, a separate control loop is provided for each of the scanners.

According to one aspect of the invention, the main and auxiliary radiation sources are designed and / or arranged such that they illuminate different regions, in particular different facets, of a first and / or second facet element of an illumination optical unit. The at least one main radiation source and the at least one auxiliary radiation source can, in particular, illuminate disjoint regions of the first and / or second facet element or disjoint subsets of facets of the first and / or second facet element. The facets, in particular of the first facet element, are preferably switchable.

According to a further aspect of the invention, the areas illuminated by the at least one auxiliary radiation source, in particular the facets illuminated by the at least one auxiliary radiation source, are distributed over the second facet element, in particular as evenly as possible. This makes it possible to change the energy ratio of the areas illuminated by the auxiliary radiation sources, in particular facets, of the second faceted element to the areas illuminated by the at least one main radiation source, in particular facets, of the second faceted element, without causing a significant change in the illumination pupil comes.

The second facets illuminated by the auxiliary radiation source lead, in particular, to an illumination pupil which, if applicable for the respective illumination setting, has a pole balance of less than 3%, a telecentricity of less than 5% of the numerical aperture of the illumination and / or a uniformity error on the reticle having. In particular, they result in an illumination pupil for which the radii of the angular ranges containing 10%, 50% and 90% of the total energy of the pupil differ by less than 3% of the numerical aperture from a default value. Illustratively, according to the invention, it is provided that both the main radiation source on its own and the auxiliary radiation source alone produce the entire illumination setting, wherein the illumination setting generated by the auxiliary radiation source need not be set as precisely as that of the main radiation source, since only a small part the total intensity comes from the auxiliary radiation source.

The object is also achieved by a scanner with at least one auxiliary radiation source.

It has been recognized that corresponding auxiliary radiation sources can also be formed as part of a scanner, that is to say independently of the radiation source module. As a result, the flexibility of the scanner, in particular with regard to different usable radiation source modules, in particular to different main radiation sources, can be increased. The requirements for the main radiation source, in particular the maximum permissible fluctuations thereof, can be specified in particular by the operator of the scanner.

Another object of the invention is to improve a projection exposure system. This object is achieved by a projection exposure system with a lighting system according to the preceding description. The advantages result from those of the lighting system.

According to one aspect of the invention, the projection exposure system comprises a plurality of scanners. The number of scanners of the projection exposure system is in particular at least two, in particular at least three, in particular at least four, in particular at least five, in particular at least six, in particular at least eight, in particular at least ten. In particular, it is at most twenty.

According to a further aspect of the invention, each of the scanners is assigned at least one auxiliary radiation source. According to a further aspect of the invention, each of the auxiliary radiation sources is in each case assigned to at most one of the scanners.

Further objects of the invention are to improve a method for producing a microstructured or nanostructured component as well as a component produced according to the method. The advantages result from the previously described.

Further advantages and details of the invention will become apparent from the description of embodiments with reference to the drawings. Show it:

1 a highly schematic representation of the components and subsystems of a projection exposure system,

2 a somewhat less schematic representation of a section of a corresponding projection exposure system, and

3 another section of a corresponding projection exposure system.

The following are with reference to the 1 First, the essential components of a projection exposure system 1 described.

Subsequent division of the projection exposure system 1 subsystems primarily serve to delineate them. The subsystems can form separate structural subsystems. However, the division into subsystems does not necessarily have to be reflected in a constructive demarcation.

The projection exposure system 1 includes a radiation source module 2 and a plurality of scanners 3 _i .

The radiation source module 2 includes a radiation source 4 for generating illumination radiation 5 ,

At the radiation source 4 it is in particular a free electron laser (FEL). It can also be a synchrotron radiation source or a synchrotron radiation-based radiation source which generates coherent radiation with very high brilliance. As an example for such radiation sources on the US 2007/0152171 A1 and the DE 103 58 225 B3 directed.

The radiation source 4 has, for example, a mean power in the range of 1 kW to 25 kW. It has a pulse rate in the range of 10 MHz to 1.3 GHz. Each individual radiation pulse may for example have an energy of 83 μJ. With a radiation pulse length of 100 fs, this corresponds to a radiation pulse power of 833 MW.

The radiation source 4 may have a repetition rate in the kilohertz range, for example of 100 kHz, or in the low megahertz range, for example at 3 MHz, in the middle megahertz range, for example at 30 MHz, in the upper megahertz range, for example at 300 MHz or else in the gigahertz range, for example at 1.3 GHz, lie.

At the radiation source 4 it is in particular an EUV radiation source. The radiation source 4 in particular emits EUV radiation in the wavelength range, for example between 2 nm and 30 nm, in particular between 2 nm and 15 nm.

The radiation source 4 emits the illumination radiation 5 in the form of a raw jet 6 , The raw beam 6 has a very small divergence. The divergence of the raw jet 6 may be less than 10 mrad, in particular less than 1 mrad, in particular less than 100 urad, in particular less than 10 urad.

The radiation source module 2 further comprises one of the radiation source 4 downstream beamforming optics 7 , The beam shaping optics 7 serves to generate a collection output beam 8th from the raw stream 6 , The collection output beam 8th has a very small divergence. The divergence of the collection output beam 8th may be less than 10 mrad, in particular less than 1 mrad, in particular less than 100 urad, in particular less than 10 urad.

In addition, the radiation source module comprises 2 one of the beam shaping optics 7 downstream coupling optics 9 , The decoupling optics 9 serves to generate several, namely n, single output jets 10 _i (i = 1 to n) from the collection output beam 8th , The single output jets 10 _i each form beam bundles for illuminating an object field 11 _i . The radiation beams can each have a plurality of separate partial beams 12 _i include.

The radiation source module 2 is arranged in particular in an evacuable housing.

The scanners 3 _i each comprise a beam guiding optics 13 _i and a projection optics 14 _i .

The beam guiding optics 13 _i serves to guide the illumination radiation 5 , in particular the respective individual output beams 10 _i to the object fields 11 _i the single scanner 3 _i .

The projection optics 14 _i is used in each case to represent one in one of the object fields 11 _i arranged Retikels 22 _i in an image field 23 _i , in particular one in the image field 23 _i arranged wafer 25 _i .

The radiation guidance optics 13 _i comprises in the order of the beam path of the illumination radiation 5 each a deflection optics 15 _i, coupling optics 16 _i , in particular in the form of a focusing assembly, and an illumination optics 17 _i . The coupling optics 16 _In particular, _i can also be designed as a Wolter type III collector.

The deflection optics 15 _i can also be used in the coupling-out optics 9 be integrated. The decoupling optics 9 may in particular be designed such that they the individual output jets 10 _i already redirects in a desired direction.

According to a variant can also on the deflection optics 15 _{i be} waived altogether. For different variants of the deflection optics 15 _i am for example on the DE 10 2013 223 935.1 referenced, which is hereby incorporated as part of the present application in this.

The coupling optics 16 _i is used in particular for coupling the illumination radiation 5 , in particular one of the coupling-out optics 9 generated single output jets 10 _i in each one of the scanners 3 _i .

The beam guiding optics 13 _i forms together with the beam shaping optics 7 and the decoupling optics 9 Components of a lighting device 18 ,

The lighting device 18 is as well as the radiation source 4 Part of a lighting system 19 ,

Each of the lighting optics 17 _i is one of the projection optics 14 _i assigned. Together, the associated lighting optics 17 _i and the projection optics 14 _i also as optical system 20 _i denotes.

The illumination optics 17 _i is used in each case for the transfer of illumination radiation 5 to one in the object field 11 _i in an object plane 21 arranged reticle 22 _i . The projection optics 14 _i is used to image the reticle 22 _i , in particular for imaging structures on the reticle 22 _i , on one in a picture box 23 _i in an image plane 24 arranged wafers 25 _i .

The projection exposure system 1 in particular comprises at least two, in particular at least three, in particular at least four, in particular at least five, in particular at least six, in particular at least seven, in particular at least eight, in particular at least nine, in particular at least ten scanners 3 _i . The projection exposure system 1 can have up to twenty scanners 3 _i include.

The scanners 3 _i are from the common radiation source module 2 , in particular the common radiation source 4 , with illumination radiation 5 provided. The common radiation source 4 is also referred to below as the main radiation source.

The projection exposure system 1 serves for the production of micro- or nanostructured components, in particular electronic semiconductor components.

The coupling optics 16 _i is in the beam path between the radiation source module 2 , in particular the coupling-out optics 9 , and each one of the illumination optics 17 _i arranged. It is designed in particular as a focusing assembly. It is used to transfer one of the individual output jets 10 _i in an intermediate focus 26 _i in an intermediate focus level 27 , The intermediate focus 26 _i can in the region of a passage opening of a housing of the optical system 20 _i or the scanner 3 _{i be} arranged. The housing is in particular evacuated.

By means of the deflection optics 15 _i and / or the coupling optics 16 _i can be the respective single output beam 10 _{i are} each formed such that it has a predetermined divergence and in particular a predetermined spatial intensity distribution I * (x, y). For ease of description, x and y coordinates of a Cartesian xyz coordinate system are used. The x-coordinate regularly tightens a bundle cross-section of the illumination radiation with the y-coordinate 5 on. The z-direction runs regularly in the radiation direction of the illumination radiation 5 , In the area of the object plane 21 or the picture plane 24 the y-direction is parallel to a scan direction. The x-direction is perpendicular to the scan direction.

The illumination optics 17 Each _i comprises a first facet mirror 28 _i and a second facet mirror 29 _i , whose function corresponds in each case to those known from the prior art. At the first facet mirror 28 _i may be, in particular, a field facet mirror. At the second facet mirror 29 _i may be, in particular, a pupil facet mirror. The second facet mirror 29 _{However, i} may also be spaced apart from a pupil plane of the illumination optics 17 _{i be} arranged. This general case is also called a specular reflector.

The facet mirrors 28 _i , 29 _i each comprise a plurality of facets 30 . 31 , When operating the projection exposure system 1 is one of the first facets 30 each one of the second facets 31 assigned. The associated facets 30 . 31 each form an illumination channel of the illumination radiation 5 for illuminating the object field 11 _i at a certain illumination angle.

The channel-wise assignment of the second facets 31 to the first facets 30 takes place as a function of a desired illumination, in particular of a predetermined illumination setting. The facets 30 of the first facet mirror 28 _i can be displaceable, in particular tiltable, in particular with two tilting degrees of freedom, respectively. The facets 30 of the first facet mirror 28 _i are in particular switchable between different positions. They are in different switching positions different of the second facets 31 assigned. It can also be at least one switching position of the first facets 30 be provided, in which the incident on them illumination radiation 5 not to illuminate the object field 11 _i contributes. The facets 30 of the first facet mirror 28 _i can as virtual facets 30 be educated. This is understood to mean that they are formed by a variable grouping of a plurality of individual mirrors, in particular a plurality of micromirrors. For details be on the WO 2009/100856 A1 referenced, which is hereby incorporated as part of the present application in this.

The facets 31 of the second facet mirror 29 _i can act as virtual facets accordingly 31 be educated. They can also be correspondingly displaceable, in particular tiltable, be formed.

About the second facet mirror 29 _i and optionally via a subsequent, not shown in the figures, transmission optics, which includes, for example, three EUV mirrors are the first facets 30 in the object field 11 _i in the reticle or object plane 21 displayed.

The individual illumination channels lead to the illumination of the object field 11 _i with certain lighting angles. The totality of the illumination channels thus leads to an illumination angle distribution of the illumination of the object field 11 _i by the illumination optics 17 _i . The illumination angle distribution is also referred to as the illumination setting.

In a further embodiment of the illumination optics 17 _i , in particular with a suitable position of the entrance pupil of the projection optics 14 _i , can look at the mirrors of the transfer optics in front of the object field 11 _i also be dispensed with, which leads to a corresponding increase in transmission for the Nutzstrahlungsbündel.

The reticle 22 _i with for the illumination radiation 5 reflective structures is in the object plane 21 in the area of the object field 11 _i arranged. The reticle 22 _i is carried by a reticle holder. The reticle holder is controlled by a displacement device displaced.

The projection optics 14 _i forms the object field in each case 11 _i in the image field 23 _i in the picture plane 24 from. In this picture plane 24 is in the projection exposure of the wafer 25 _i arranged. The wafer 25 _i has a photosensitive coating formed during the projection exposure with the projection exposure system 1 is exposed. The wafer 25 _i is carried by a wafer holder. The wafer holder is controlled by a displacement device displaced.

The displacement device of the reticle holder and the displacement device of the wafer holder can be in signal connection with one another. They are especially synchronized. The reticle 22 _i and the wafer 25 _i are in particular synchronized with each other displaced.

In the following, an advantageous embodiment of the illumination system 19 described.

It was recognized that as the main source of radiation 4 Advantageously, a free electron laser (FEL) or a synchrotron-based radiation source can be used. A FEL scales very well, that is, it can be particularly economically operated if it is designed large enough to a plurality of scanners 3 _i with illumination radiation 5 to supply. In particular, the FEL may have up to eight, ten, twelve or even twenty scanners with illumination radiation 5 supply.

It can also be more than one main source of radiation 4 be provided. Here, each of the main radiation sources 4 each with a specific selection of scanners 3 _{i be} assigned. The quantities of the different main radiation sources 4 associated scanner 3 _i can be disjoint. They can also have non-empty intersections, they can also be identical in particular.

A requirement for the projection exposure system 1 is that the radiation intensity which reaches the individual reticles, and in particular the radiation dose, which the wafers 25 _i reached, can be regulated very accurately and very quickly. The radiation dose, which the wafers 25 _i achieved, should be kept as constant as possible in particular.

Fluctuations of the reticle 22 _i incident illumination radiation 5 , in particular the total intensity of the on the reticle 22 _i incident illumination radiation 5 and so on the wafers 25 _i incident radiation dose, can on intensity fluctuations of the main radiation source and / or on geometric fluctuations, in particular on fluctuations of the direction of the main radiation source 4 emitted raw beam 6 and / or variations in the cross-sectional profile, in particular in the region of the coupling-out optical system 9 to be due to the same. Variations in the cross-sectional profile may be due, in particular, to divergence variations in the radiation source 4 emitted raw beam 6 and / or the collection output beam 8th be due. Fluctuations in the overall intensity of the reticle 22 _i incident illumination radiation 5 may be caused in particular by changes in the cross-sectional profile in the region of the coupling-out optical system 9 to a variation of the distribution ratio of the energy of the collection output beam 8th on the single output jets 10 _{i can} lead.

Fluctuations of the reticle 22 _i incident illumination radiation 5 , in particular the total intensity of the on the reticle 22 _i incident illumination radiation 5 and so on the wafers 25 _i impinging radiation dose, can also to fluctuations in the transmittance by the scanner 3 _{i be} due. This can also include a fluctuation of the transmission between a Zwischenfokusebene 27 and an object plane 21 be understood. This can also include a fluctuation in the transmission between the coupling-out optics 9 and the wafer 25 _i understood.

The possibility of dose control according to the invention can be combined with further possibilities of dose control, in particular a special design of the beam shaping optics 7 and / or the coupling-out optics 9 , be combined.

According to the invention, at least one auxiliary radiation source is provided for regulating the dose 32 _i provide. The auxiliary radiation source 32 _{i also} emits illumination radiation 5 , It emits in particular illumination radiation 5 having a wavelength which is the wavelength of that of the main radiation source 4 emitted illumination radiation 5 equivalent. The wavelengths of the main radiation source 4 emitted illumination radiation 5 and from the auxiliary radiation source 32 _i emitted illumination radiation 5 In particular, each differ by no more than 10%, in particular no more than 1%. They are in particular identical.

The at least one auxiliary radiation source 32 _i is a specific one of the scanners 3 _i assigned. It serves to the scanner 3 _{i is} a variable, controllable amount of additional illumination radiation 5 supply.

In principle, it is also possible, the auxiliary radiation source 32 _i a majority of the scanners 3 _i assign. In this case, the illumination radiation from the auxiliary radiation source 32 _i, for example by means of a displaceable, in particular a pivotable and / or a rotating mirror between the scanners 3 _{i be} switched.

For controlling the auxiliary radiation source 32 _i is a control device with a sensor, in particular in the form of an energy sensor 33 _i , provided. The energy sensor 33 _i can in the beam path of the illumination radiation 5 between the coupling-out optics 9 and the object plane 21 , in particular in the region between the coupling-out optics 9 and the intermediate focus level 27 or in the area between the intermediate focus level 27 and the object plane 21 , in particular in the area of the object plane 21 be arranged. He can also be in the area between the object plane 21 and the picture plane 24 , in particular in the field of projection optics 14 _i , especially at the image level 24 be arranged. An arrangement in the region of the object plane is preferred 21 ,

The energy sensor 33 _i and the auxiliary radiation source 32 _In particular, _i form components of a control loop. The auxiliary radiation source 32 _i can with the help of the energy sensor 33 _i are controlled such that when fluctuations of the main radiation source 4 on the reticle 22 _i incident radiation power of the illumination radiation 5 can be kept constant. With the help of the adjustable auxiliary radiation source 32 _In particular, it is possible the fluctuation of the total on the reticle 22 _i incident radiation power of the illumination radiation 5 smaller than a predetermined permissible maximum value, in particular less than 1%, in particular less than 0.3%, in particular less than 0.1%, in particular less than 0.03%, in particular less than 0.01%, of the mean radiation power. In absolute terms, it can be ensured that the fluctuation in the overall performance of the reticle 22 _i incident illumination radiation is less than 10 W, in particular less than 1 W, in particular less than 100 mW, in particular less than 10 mW.

The auxiliary radiation source 22 _In particular, _i is controllable on a time scale of faster than 1 ms.

The auxiliary radiation source 32 _i emits illumination radiation 5 with a radiation power P _Help in the range of 1 mW to 100 W, particularly in the range of 10 mW to 50 W. The radiation power P _Help an auxiliary radiation source 32 _In particular, _i may be at least 100 mW, in particular at least 500 mW, in particular at least 1 W, in particular at least 3 W, in particular at least 10 W. The radiant power P _helps the auxiliary radiation source 32 _i can in particular at most 50 W, in particular at most 30 W, in particular at most 10 W.

As an auxiliary radiation source 32 _i can serve in particular a xenon source. This may be particularly useful when the illumination radiation 5 is used in a range around 13.5 nm around. Alternatively, the auxiliary radiation source 32 _i also be a gandolinium source or a terbium source. This may be particularly useful when the illumination radiation is used in a range around 6.9 nm around. Alternatively, as an auxiliary radiation source 32 _i also serve as a synchrotron-based radiation source, a discharge-induced plasma source (DPP source) or a laser-induced plasma source (LPP source). It is also possible as an auxiliary radiation source 32 _{i use} one or more so-called compact sources with a radiation power P _Hilf of less than 1 W each.

The auxiliary radiation source 32 _i can have my own collector 36 exhibit.

Advantageously, the illumination radiation 5 from the auxiliary radiation source 32 _{i distributed} as evenly as possible over the location and pupil. This can be achieved, for example, by specifically specifying which of the first facets 30 and / or in particular which of the second facets 31 with illumination radiation 5 from the auxiliary radiation source 32 _{i be} charged. Advantageously, the area of the envelope is that of the auxiliary radiation source 32 _i with illumination radiation 5 actable second facets 31 at least 30%, in particular at least 50%, in particular at least 70 , In particular 85%, in particular at least 90% of the area of the envelope with the illumination radiation 5 actable second facets 31 , Advantageously, the area of the envelope is that of the main radiation source 4 with illumination radiation 5 actable second facets 31 at least 50%, in particular at least 75 , In particular 90%, in particular at least 95% of the area of the envelope with the illumination radiation 5 actable second facets 31 , A second facet 31 is with illumination radiation 5 the main radiation source or an auxiliary radiation source 32 _i acted upon, if in at least one displacement position of at least a first facet 30 the relevant facet with illumination radiation 5 the relevant source is acted upon. The auxiliary radiation source 32 _i can each be a component of the radiation source module 2 form. It can also each one part of the lighting device 18 form. It can also each be a part of one of the scanners 3 _i form.

The auxiliary radiation source 32 _i is in particular in the beam path of the illumination radiation 5 after the coupling optics 9 arranged.

The illumination radiation 5 from the auxiliary radiation source 32 _i can each by means of its own coupling optics 34 _i in the optical system 20 _{i be} coupled. It can by means of its own intermediate focus 35 that of the intermediate focus 26 _{i of} the illumination radiation 5 the main radiation source 4 deviates into the optical system 20 _{i be} coupled. In principle, it is also conceivable that the illumination radiation 5 from the auxiliary radiation source 32 _i with the same input optics 16 _i , which for coupling the illumination radiation 5 from the main radiation source 4 into the optical system 20 _{i is} used to couple into this.

The following are with reference to the 2 further aspects of the invention described.

According to the invention, separate regions, in particular different facets, are provided 30 of the first facet mirror 28 _i with illumination radiation from the main radiation source 4 and with illumination radiation from the auxiliary radiation source 32 _i to illuminate. This is in the 2 indicated by different hatching. It makes sense, the proportions of the different radiation sources 4 . 32 _i illuminated facets 30 corresponding to the different radiant powers P _{main of} the main radiation source 4 and P _Help the auxiliary radiation source 32 _i to choose.

The number of the main radiation source 4 or the auxiliary radiation source 32 _i lit first facets 30 just corresponds to the number of these radiation sources 4 . 32 _i lit second facets. Advantageously, those of the auxiliary radiation source 32 _i lit second facets 31 evenly over the pupil or evenly over the second facet mirror 29 _i distributed. This allows the proportion of the auxiliary radiation source 32 _i for the performance of the overall performance of the reticle 22 _i used illumination radiation 5 to vary without causing a significant change in the illumination pupil.

The one from the main radiation source 4 on the first facet mirror 28 _i illuminated area, in particular that of the main radiation source 4 illuminated first facets 30 , and that of the auxiliary radiation source 32 _i at the first facet mirror 28 _i illuminated area, in particular that of the auxiliary radiation source 32 _i lit first facets 30 , can be right next to each other. They can also be arranged at a distance from each other. The areas are formed in particular simply connected.

The surface normal of a first facet 30 is due to the location of the associated second facet 31 as well as the location of the intermediate focus 26 _i , through which the relevant first facet 30 is lit, certainly. Become adjacent second facets 31 through first facets 30 that have different intermediate focuses 26 _i ; 35 through different light sources 4 ; 32 _{i be} lit, with illumination radiation 5 Accordingly, the surface normals of these first facets can accordingly 30 be significantly different.

The first facets 30 are in particular arranged such that false light is not used to illuminate the reticle 22 _i contributes.

The facets 30 In particular, they are grouped into separate groups, with each group of the first facets 30 a particular one of the radiation sources 4 . 32 _{i is} assigned. The facets 30 The same group are arranged here in particular in a simply connected area.

In the manufacture of micro- or nanostructured devices with the projection exposure system 1 First, the reticles 22 _i and the wafers 25 _i provided. Subsequently, each one structure on one of the reticles 22 _i on a photosensitive layer of one of the wafers 25 _i using the projection exposure system 1 projected. By developing the photosensitive layer, a micro or nanostructure is formed on the wafer 25 _i and thus the micro- or nanostructured component manufactured. The micro- or nanostructured component can in particular be a semiconductor component, for example in the form of a memory chip.

In the projection exposure for the production of a micro- or nanostructured component, both the reticles 22 _i as well as the wafers 25 _i shifted synchronized by appropriate control of the displacement devices, in particular synchronized scanned. The wafers 25 _i are scanned during the projection exposure at a scanning speed of, for example, 600 mm / s.

With the system according to the invention with a plurality of scanners 3 _i it is possible to have multiple wafers 25 _i at the same time in separate scanners 3 _i to expose.

QUOTES INCLUDE IN THE DESCRIPTION

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Cited patent literature

• US 2007/0152171 A1 [0049]
• DE 10358225 B3 [0049]
• DE 102013223935 [0062]
• WO 2009/100856 A1 [0075]

Claims (17)

Radiation source module ( 2 ) for a projection exposure system ( 1 ) comprising 1.1. at least one main radiation source ( 4 ), 1.1.1. which illumination radiation ( 5 ) emitted with a radiation power P _main , and 1.2. at least one auxiliary radiation source ( 32 _i ), 1.2.1. which illumination radiation ( 5 ) emitted with a radiation power P _auxiliary , 1.3. the auxiliary radiation source ( 32 _i ) to compensate for variations in the main radiation source ( 4 ) serves. Radiation source module ( 2 ) according to claim 1, characterized in that a ratio of the radiation power P _{main of} the main radiation source ( 4 ) to the radiant power P _Help the at least one auxiliary radiation source ( 32 _i ) is at least 1.5, P _main : P _auxiliary ≥ 1.5. Radiation source module ( 2 ) according to one of the preceding claims, characterized in that a number of the auxiliary radiation sources ( 32 _i ) at least 2 is. Radiation source module ( 2 ) according to one of the preceding claims, characterized in that as main radiation source ( 4 ) a free electron laser (FEL) or a synchrotron-based radiation source is provided. Lighting device ( 18 ) for a projection exposure system ( 1 ) comprising at least one auxiliary radiation source ( 32 _i ) to compensate for fluctuations in a main radiation source ( 4 ). Lighting device ( 18 ) according to claim 5, characterized by at least two object fields ( 11 _i ), in each of which a reticle can be arranged, each of the object fields ( 11 _i ) of at least one of the auxiliary radiation sources ( 32 _i ) is illuminable, and each of the auxiliary radiation sources ( 32 _i ) for illuminating at most one of the object fields ( 11 _i ) serves. Lighting system ( 19 ) with a radiation source module ( 2 ) according to one of claims 1 to 4. Lighting system ( 19 ) with a lighting device ( 18 ) according to one of claims 5 or 6 and a main radiation source ( 4 ). Lighting system ( 19 ) according to one of claims 7 or 8, characterized in that the at least one auxiliary radiation source ( 32 _i ) is part of a control loop. Lighting system ( 19 ) according to one of claims 7 to 9, characterized in that the at least one main radiation source ( 4 ) and the at least one auxiliary radiation source ( 32 _i ) different regions of a first facet element ( 28 _i ) and / or a second facet element ( 29 _i ) illuminate. Lighting system ( 19 ) according to any one of claims 7 to 10, characterized in that from the at least one auxiliary radiation source ( 32 _i ) illuminated areas of a second facet element ( 29 _i ) via the second facet element ( 29 _i ) are distributed. Scanner ( 3 _i ) for a projection exposure system ( 1 ) with at least one auxiliary radiation source ( 32 _i ) to compensate for fluctuations in a main radiation source ( 4 ). Projection exposure system ( 1 ) with a lighting system ( 19 ) according to one of claims 7 to 11. Projection exposure system ( 1 ) according to claim 13, characterized by a number of scanners ( 3 _i ) of at least two. Projection exposure system ( 1 ) according to one of claims 13 and 14, characterized in that each of the scanners ( 3 _i ) at least one auxiliary radiation source ( 32 _i ), and each auxiliary radiation source ( 32 _i ) at most one of the scanners ( 3 _i ) is assigned. Method for producing a method for producing a microstructured component, comprising the following method steps: - providing at least one reticle ( 22 _i ), - providing at least one wafer ( 25 _i ) with one for the illumination radiation ( 5 ) sensitive coating, - projecting at least a portion of the at least one reticle ( 22 _i ) on the at least one wafer ( 25 _i ) using the projection exposure system ( 1 ) according to one of claims 13 to 15, - developing the with the illumination radiation ( 5 ) exposed photosensitive layer on the wafer ( 25 _i ). Component produced by a method according to claim 16.

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