DE102014100179B4 - Process for the reactive deposition of layers - Google Patents

Abstract

Process for the reactive deposition of oxynitride or oxicarbonitride layers of metallic or semiconducting materials by means of magnetron sputtering from an elongate magnetron,
wherein the flow of the process gas of the sputtering process comprising the reactive gases oxygen and nitrogen as first and second process gas components and a working gas as another further process gas component along the Racetracks (11) of the magnetron (2) in segment process gas flows with associated Plasmazonensegmenten (10 ),
- Wherein a segment process gas flow from the gas flows of the process gas components in the respective Plasmazonensegment (10) is formed, and
- The process gas components via at least two parallel juxtaposed in the longitudinal extension of the magnetron gas channels (6), of which at least one is formed by means of gas channel segments (7) segmented, are admitted into a process space, characterized in that
- At least the first and second process gas component mixed with each other are supplied by means of a one-piece or segmented gas channel (6) along the elongated magnetron (2), so that the gas quantity ratio of these at least two process gas components in the gas channel (6) along the elongated magnetron (2) equal is and
- That the segment process gas flows by gas flows over the gas channel segments (7) of another segmented gas channel (6) supplied other further process gas component are set in segments so that the Plasmazonensegmentstoichiometrie each, the segment process gas flow corresponding Racetrackteils is equal or the Plasmazonensegmentstöchiometrien the , Racetrackteile corresponding to the segment process gas flows in a predefined manner.

Description

The invention relates to a process for the reactive deposition of oxynitride or oxicarbonitride layers of metallic or semiconductive materials by magnetron sputtering from an elongate magnetron, wherein the flow of the process gas of the sputtering process, which consists of a reactive gas as a process gas component and a working gas as another Process gas component is divided along the Racetracks in segment process gas flows with associated Plasmazonensegmenten, wherein a segment process gas flow from the gas flows of the process gas components is formed in the respective Plasmazonensegment, and the process gas components via at least two gas channels, at least one of which is segmented by means of gas channel segments to be let in a process room.

The invention is in the field of reactive magnetron sputtering, in particular in the field of the production of large-area coatings of substrates by means of this coating technology, wherein the homogeneity of the coating properties is a decisive criterion in the production of such layers.

In the production of layers by means of magnetron sputtering, the process conditions have a decisive influence on the layer properties. In magnetron sputtering, a plasma is ignited in the process gas relative to the substrate to be coated and in front of a magnetron cathode whose positive charge carriers dissolve the atoms or molecules out of the surface of the target with the so-called sputtering effect and transfer them into the gas phase. When the vapor particles hit the substrate, they begin to form a layer by condensation on the surface.

In dynamic processes, the substrate is moved in a transport direction in front of the target in pass-through systems and thereby coated. To support the plasma formation and to increase the sputtering rate, a magnet system is arranged on the side of the target facing away from the plasma. The magnet arrangement forms a tunnel-shaped magnetic field in front of the target surface along a closed annular path. In the area where the component of the magnetic field that is parallel to a differential surface element has the largest amount, the maximum erosion of the target material occurs. The forming annular sputtering or erosion trench is called a racetrack.

Furthermore, a distinction is made in the magnetron sputtering between the non-reactive and the reactive sputtering, these two processes differing by differences in the stoichiometry of the target and the layer to be deposited. In the case of non-reactive sputtering, the stoichiometry of the deposited layer essentially corresponds to that of the target; in reactive sputtering, at least one chemical element from the process gas is incorporated in addition to the elements of the target. In non-reactive magnetron sputtering, a working gas, i. an inert gas, such as argon, passed into the process space. For correction purposes, another gas such as nitrogen may also be included in small quantities. In reactive sputtering, in addition to the working gas, a reactive gas or only a reactive gas, for example, oxygen is admitted. Thus, the process gas is formed in the non-reactive sputtering essentially from the working gas, in the reactive process both from the working gas and from reactive gas or only from reactive gas.

For example, for the production of silicon nitride layers, either metallic boron-doped (Si: B) or typically aluminum-doped (Si: Al) targets are sputtered in an argon-nitrogen atmosphere. Usually one or more Doppelmagnetronanordnungen be used and operated in AC or MF mode. The gases involved in the process are admitted into the process space via gas channels, so that the plasma stoichiometry, i. the composition of the plasma with respect to the amount of the ionized working gas, the electrons, the reactive gas and the sputtered target particles, can be directly influenced. The gas channels are usually arranged parallel to the longitudinal extent of the magnetrons and transversely to the transport direction of the substrates to be coated.

The longitudinal extent of a magnetron designates the largest spatial extent of the magnetron in an axial direction of the magnetron, wherein for example in a rotating magnetron while the extension along the axis of rotation is meant. In practice, a so-called flow mode operation has been established for reactive sputtering processes. Flow mode operation in this context means that the generator is operated to operate the magnetron at a predetermined operating point, i. converts a set power setting fixed argon and reactive gas flows. The nitridic process in the case of silicon nitride sputtering is operated at relatively low voltages, whereas in pure metallic process of silicon sputtering alone with argon and without nitrogen set much higher voltages.

The argon is introduced into the process space via a one-piece gas channel. one-piece Gas channel means that the gas flow of the admitted process gas component over the entire length of a magnetron is as equal as possible, ie from each (nozzle) opening of the undivided gas channel flows from the same gas stream.

In order, for example, to compensate for inhomogeneities in the layer thickness in the production of stoichiometric silicon nitride layers, the nitrogen flow along the longitudinal extent of the magnetron is adjusted individually, using segmented gas channels for this purpose. The individual adjustment of gas flows is also called trimming. Nitrogen, like any reactive gas, is consumed very locally by the process and, therefore, acts more effectively when trimming to set the coating rate than the working gas. In the so-called flow mode, the coating rate is reduced by more nitrogen and increased by less nitrogen. The reactive gas oxygen behaves analogously. The effect of the inert working gas is conversely reversed: an increase in its amount of gas introduced increases the coating rate and a reduction reduces this, since either more or just less ionized gas particles are available.

To avoid unintentional plasma density inhomogeneities, which occur in symmetrically constructed magnetron systems are in DE 10 2013 108 994 A1 segmented gas channels are used, with the help of a tailored to the Racetrack section part-process gas flow is adjustable.

A segmented gas channel is to be understood as meaning a gas channel which is subdivided into individual gas channel segments in the longitudinal extent of the magnetron, in which the gas flows of the introduced gas, for example nitrogen, can be regulated independently of one another. Thus, the stoichiometry of the plasma along the longitudinal extent of the magnetron and thus also the stoichiometry and the layer thickness of the layer to be deposited can be influenced.

In order to distribute the admitted gas as evenly as possible over a large distance and to realize a uniform gas flow, gas guide arrangements have been established in practice, which are constructed according to the principle of the so-called binary tree. In the DE 10 2004 008 425 A1 as well as in the DE 10 2005 035 247 A1 For example, inside a gas channel, a binary structure is designed so that a first channel to which a gas source is connected leads to a first branch. From this branch, a second and a third channel lead to a second and a third branch. The two channels have the same length and the same cross-section. At the second and third T-shaped branch again two equal-sized channels are connected, leading either to gas outlet openings or other branches.

Another possibility for distributing a gas or gas mixture from a gas channel as evenly as possible over the entire length of the gas channel is to use nozzle screws or valves with which the gas flow to be introduced into the process space can be set.

The disadvantage, however, is that in multi-component gas mixtures mixing often takes place only in the process room and thus inhomogeneities in the composition of the gas mixture can not be completely prevented. To improve the mixture, for example, in the DE 10 2013 109 696 B3 a mixer used, which causes a turbulence of the gases.

In addition to nitrogen, an additional amount of oxygen in the process gas is required for the production of oxynitride layers, which creates another parameter that influences the layer thickness and the stoichiometric uniformity.

In the case of oxynitride layers, the stoichiometry depends very decisively and sensitively on the ratio of the two reactive gases oxygen and nitrogen. This ratio thus determines the optical properties, e.g. the refractive index of the oxynitride layers. In addition, however, the sputtering rate of the oxynitride layers also depends on its stoichiometry. The higher the oxygen content, the lower the refractive index and the lower the rate.

Due to the above effect of the reactive gas, a reactive gas is always used as trim gas in the prior art, which leads to Oxinitridschichten that either a homogeneous layer thickness or a homogeneity in the color value can be achieved, but not both at the same time. The latter is desirable above all when using oxinitride layer systems in the architectural glass coating.

The color distribution is judged by the CIELab color coordinates L * or Y, a * and b * based on a nonlinear transformation of the X, Y, Z color space. Neutral colors in the CIE L * a * b * color system are characterized by a * (Rg) and b * (Rg) color values of approximately zero, while green colors are characterized by negative a * color values, blue colors by negative b * Color values, red colors are characterized by positive a * color values and yellow colors by positive b * color values.

It is therefore an object of the invention to provide a method with which the process gas distribution and the process gas composition for a coating process with multi-component gas mixtures can be improved so that both a desired color and thus stoichiometry distribution as well as a desired distribution with respect to the layer thickness the entire substrate width can be adjusted.

The desired color distribution includes, for example, a uniform or a gradual distribution.

To achieve the object, it is proposed that in the process gas, which comprises, in addition to the reactive gases oxygen and nitrogen as the first and second process gas components, a working gas as another further process gas component, at least the first and second process gas components mixed together and by means of a one-piece or alternatively a segmented gas channel be supplied along the longitudinally extended magnetron, so that the gas quantity ratio of these at least two process gas components in the gas channel used along the elongated magnetron is the same. Furthermore, the segment process gas flows are adjusted in segments by gas flows of the other further process gas component supplied via the gas channel segments of another gas channel such that a plasma zone segment stoichiometry of each racetrack part corresponding to the segment process gas flow is equal.

Considering the above problem, what is considered to be "the same" depends essentially on the optical effect of a layer and on the absolute layer thickness. The term includes, according to the invention, such deviations of the gas quantity ratios which cause no optically perceptible color or transmission or reflection differences in the deposited layer over the length of the magnetron. For gas flows in standard cubic centimeters (sccm) limits of the deviations of the gas flows of the respective process gas components of up to 3% of the setpoint of the gas flow of each process gas component have proved favorable, preferably, the deviations should be less than 1%.

For the alternative application of this method for deposition of layers on a substrate with a gradient across the substrate width, the other further process gas component introduced via the gas channel segments can be adjusted segment by segment such that the plasma zone segment stoichiometry of each racetrack part corresponding to the segment process gas flow is correspondingly different.

The mixing of the process gas components can take place in various ways, for example in a gas channel, in flow direction, upstream mixing chamber or more of them before each gas channel segment, in the gas channel or gas channel segment, in special chambers within the gas channel or by using appropriate tools, as in below an embodiment of the invention described.

The proposed method offers the advantage that it selectively controls the process gas component which has the least influence on the layer stoichiometry and thus also on the layer properties, in which case the process gas components, which are decisive for the layer stoichiometry to be deposited, are already in a desired fixed ratio the process space can be introduced.

The method according to the invention makes it possible, even for more than one reactive gas, to actively influence the stoichiometry of the layer-forming particles in the plasma and thus also the layer stoichiometry and the layer thickness distribution, so that the desired distribution or uniformity can be set in a targeted manner. In this case, the different effect of the gases on the stoichiometry and the deposition rate is used variably by means of the differently combined one-part and segmented gas channels.

As a result, in addition to the layer thickness, the method according to the invention makes it possible to uniformly produce all color values and consequently also the stoichiometry over the substrate width. In contrast, in the prior art, adjustment of only one color value, often the b * (Rf) color value, from which a layer thickness uniformity is concluded. For the latter, the skilled person knows the computational way by means of simulation software or the more complex experimental way. This is implemented in the coating by trimming by means of a component of the process gas. Although the coating obtained has a uniformly distributed b * (Rf) color value and a uniform layer thickness over the width of the substrate. However, the other color values, and hence stoichiometry, vary across the substrate width.

According to various embodiments of the method, the stoichiometry distribution in the plasma can be influenced by means of the segmented added working gas. If the reactive gases with the gas volume ratio according to the invention supplied via a one-piece gas channel, the deposition rate and thus the layer thickness distribution over the magnetron length and thus substrate width are compensated. Depending on the system configuration, the desired coating result, the target materials and the gases, both effects can be specifically utilized in the embodiments of the method according to the invention.

In one embodiment of the method, the process gas components introduced into the one-part gas channel are reactive gases and in a further embodiment, the process gas component introduced into the gas channel segments is the working gas. The advantage is that the reactive gases, which have a decisive influence on the stoichiometry of the layers, are already available to each other in an almost equal ratio over the substrate width to be coated and with the working gas, which has a minor influence on the layer properties Layer thickness homogeneity can be positively influenced. Depending on the coating process, in reactive processes it is also possible to introduce reactive gas via the gas channel segments. Furthermore, depending on the coating process in reactive processes, it is also possible to use no working gas at all. The reactive gas can then be admitted either via the gas channel segments or the one-piece gas channel.

The reactive gases comprise at least oxygen and nitrogen. Further additives are possible if required by the coating composition. For example, carbonaceous gases are sometimes added. Thus, e.g. Instead of oxygen, carbon dioxide can also be used. As the working gas is used for sputtering regularly argon, with other working gases, such as krypton or xenon are available for the process. Or, for technological reasons, further gases are added to the working gas if it is advantageous for the separation process per se, for example in order to increase the process stability or the deposition rate.

Depending on the target material of the magnetron, the proposed method preferably allows oxinitride or oxicarbonitride layers of metals, semiconductors or semiconductor alloys, such as eg. B. Siliziumoxinitrid-, Siliziumoxicarbonitridschichten, titanium, aluminum, chromium or Nickeloxinitrid- or -oxicarbonitridschichten produce, which have a particularly uniform stoichiometry and a uniform distribution with respect to the layer thicknesses over the entire substrate width.

For example, when oxygen and nitrogen are used as a mixture having the same gas amount ratio, e.g. upon introduction of the gases using a suitable actuator (mass flow controller, MFC) per gas, supplied to the sputtering process via the magnetron length by means of a one-piece channel, the desired gas mixture flows out of each nozzle of the gas channel. By means of a second, segmented gas channel, the working gas is supplied, so that the amount of gas per segment targeted influence on the Plasmazonensegmente and trimming with respect to stoichiometry and deposition rate on the magnetron can be done to achieve the desired color and layer thickness distribution.

Alternatively, the reactive gas can also be supplied by means of a segmented gas channel, whereby the gas quantity ratio along the magnetron length should also be the same for this case. The segmentation in this case also allows the amount of (uniform) reactive gas mixture to be varied across the substrate width. Thus, along with the stoichiometry, the rate along the magnetron length can also be influenced.

This embodiment has proven to be favorable in addition to the oxynitride deposition for the use of carbon dioxide as a reactive gas in conjunction with nitrogen for the production of Oxicarbonitridschichten.

A ratio of the segment lengths of a gas channel having three segments for the supply of the reactive gas mixture of 1: 2: 1 has proved advantageous, in particular for planar single magnetrons, which can also be used for the production of oxicarbonitride layers.

The gas flows of the process gas components are regulated separately from each other, each with an actuator according to an embodiment of the method. This means that both the at least two process gas components, which are introduced into the one-part gas channel, are regulated separately from one another, and the respective gas flows of the other further process gas components introduced via the gas channel segments are thus set in segments. Thus, the plasma stoichiometry can be influenced in segments by the amount of the gas flows of the process gas component in the individual gas channel segments.

In order to be able to regulate the gas or gas mixture flows from the gas channel segments into the process space, suitable actuators separate for the segments can also be used.

In order to achieve a local influence on the plasma stoichiometry, a process gas component along the longitudinally extended magnetron over at least two, preferably at least three Gas duct segments taken in. In general, it can be stated that with a higher segmentation of a gas channel, the local influence of the plasma stoichiometry can be refined, whereby, however, no further effect is recognizable from a certain number of segments. In a particularly advantageous embodiment of the proposed method, therefore, for a locally finer adjustability and compensation of edge effects, the process gas component is admitted along the longitudinally extended magnetron over five gas channel segments, wherein the lengths of the gas channel segments are formed in the ratio 1: 1: 4: 1: 1. For further optimized compensation of center effects, the process gas component is introduced along the longitudinally extended magnetron via six gas channel segments, preferably with an aspect ratio of 1: 1: 2: 2: 1: 1.

In one embodiment of the proposed method, the process gas components from the one-piece gas channel and the process gas component from the gas channel segments at their exit points, for example in mixing chambers, mixed again before they are then passed into the process space.

For the mixing of the process gas components, for example, a mixer with a helical structure can be used, as it is for example in the DE 10 2013 109 696 B3 is disclosed. A mixer with a helical structure is to be understood here as meaning a flow channel with elements arranged helically one after the other (eg twisted plates). These are advantageous to arrange so that successive elements have an alternating direction of rotation. The spiral shape of the mixer elements causes the gas to rotate, with the direction of rotation suddenly changing from one element to the next. By transferring the torque to the gas mixture, this is accelerated to the channel boundary, ie to the boundary of the mixing chamber, where the components mix well with each other, regardless of the type of flow regime. The quality of the mixing depends on the dimensions (channel diameter, length of the helical structures), the number of mixer elements connected in series and the flow velocity. The mixing of the process gas components can take place in a channel which contains the helical structure, wherein the mixing can preferably take place before the inlet of the process gas into the process space or before a gas channel provided for further distribution.

That is, this technique can also be used for mixing the at least two process gas components prior to entry into the one-piece gas passage to achieve homogeneous mixing of the process gas components in the adjusted ratio and thus a nearly uniform distribution inside the one-piece gas passage.

The inlet of the process gas in the longitudinal direction of the magnetron preferably takes place over a length that is greater than a width of a substrate to be coated. Thus, the influence of inhomogeneities in the plasma zone stoichiometry, which form due to edge effects at the ends of the gas inlet channels, can be significantly reduced to the layer to be deposited.

The invention will be explained in more detail with reference to embodiments.

• 1 die Verteilung der schichtseitigen Farbwerte einer auf einem Glassubstrat abgeschiedenen Siliziumoxinitrid-Schicht durch Magnetron-Sputtern nach dem Stand der Technik,
• 2 die Verteilung der schichtseitigen Farbwerte einer auf einem Glassubstrat abgeschiedenen Siliziumoxinitrid-Schicht durch Magnetron-Sputtern nach dem vorgeschlagenen Verfahren,
• 3 Anordnung der Gaskanäle für den Einlass des Prozessgases in den Prozessraum:
  1. a) Zwischen zwei Magnetrons einer Doppelmagnetronanordnung;
  2. b) In einer Transportrichtung eines Substrates gesehen vor und hinter einer Doppelmagnetronanordnung;
  3. c) Eine Kombination der Anordnungen der Gaskanäle aus 3 a) und 3 b),
• 4 Schematische Darstellung der Einlässe der Prozessgaskomponenten in den einteiligen Gaskanal und die Gaskanalsegmente nach dem vorgeschlagenen Verfahren.

In the accompanying drawings show

• 1 the distribution of the layer-side color values of a silicon oxynitride layer deposited on a glass substrate by magnetron sputtering according to the prior art,
• 2 the distribution of the layer-side color values of a silicon oxynitride layer deposited on a glass substrate by magnetron sputtering according to the proposed method,
• 3 Arrangement of the gas channels for the inlet of the process gas into the process space:
  1. a) Between two magnetrons of a double magnetron arrangement;
  2. b) seen in front of and behind a Doppelmagnetronanordnung in a transport direction of a substrate;
  3. c) A combination of the arrangements of the gas channels 3 a ) and 3 b )
• 4 Schematic representation of the inlets of the process gas components in the one-piece gas channel and the gas channel segments according to the proposed method.

1 Figure 12 shows the distribution of color values of a deposited silicon oxynitride layer by prior art magnetron sputtering over a substrate width. In this case, argon was added as working gas and oxygen as reactive gas, each with a set gas flow in the process chamber via the one-piece gas channel. The one-piece gas channel works as a nozzle channel gas distributor, ie the gas mixture of argon and oxygen is introduced into the process chamber via nozzle screws.

The plasma segment stoichiometry was influenced by means of nitrogen, which is introduced into the process space via the gas channel segments, the nitrogen gas flow being controlled so that the plasma gas segment stoichiometry is as constant as possible along the length of the magnetron. The gas channel segments are formed as a binary gas distributor, wherein structures are formed according to the principle of the binary tree in the interior of the gas channel segments. However, the increases of lines resulting from the measured values show in 1 Due to the extremely sensitive dependence of the coating rate and the stoichiometry on the exact ratio of oxygen and nitrogen, it is not possible to set a homogeneous color distribution in all color values.

2 shows the distribution of color values of a deposited silicon oxynitride layer by magnetron sputtering according to the proposed method over a substrate width. In this case, a reactive gas mixture of oxygen and nitrogen, which has a virtually the same ratio of oxygen and nitrogen over the entire width of the substrate, is introduced via the one-part gas channel. The uniform distribution of the two reactive gases can be carried out, for example, via a mixer before the inlet of the reactive gas mixture in the one-piece gas channel. The one-piece gas channel works as a nozzle channel gas distributor, ie the reactive gas mixture of nitrogen and oxygen is distributed via nozzle screws.

The reactive gas mixture passes through the nozzle screws to further mixers, at least one of which is assigned to each gas channel segments in order to mix the reactive gas mixture and the segments also incorporated into the mixer and adjustable working gas flows from the gas channel segments with each other. Thus, the entire process gas, consisting of two reactive gases (oxygen and nitrogen) and a working gas (argon), optimally mixed and introduced via a gas distribution system in the process room. In alternative embodiments, instead of the mixers as described above, mixing chambers may also be used which locally connect the corresponding outputs of both gas channels.

The gas channel segments are formed as a binary gas distributor, wherein structures are formed according to the principle of the binary tree in the interior of the gas channel segments. The binary gas distributors may for example be constructed of rectangular distribution plates, wherein in each distribution plate recesses are arranged so that from the gas inlet to the gas outlets creates a binary structure in which a recessed gas flow is branched so that the gas flow is the same size at all gas outlets , The connection between the one-piece gas channel, which is designed as a nozzle channel gas distributor, and the gas channel segments of the binary gas distributor can for example be composed of individual, structured aluminum plates, wherein a space for mixing the process gas components is formed so that an optimally mixed process gas in the Process room can be admitted. This process gas is thus segmentally optimally adaptable to the Plasmazonensegmentstöchiometrie.

The 3 a ) to c) show possible arrangements of the gas channel distribution system 1 which is used for the proposed procedure. The gas distribution system, for example, between two magnetrons 2 a double magnetron arrangement be arranged ( 3a ), or in the transport direction 4 a substrate to be coated seen in front of and behind a Doppelmagnetronanordnung ( 3b ). A combination of both positioning is possible ( 3c ). The advantage of these arrangements is that it allows the homogenization of the plasma stoichiometry along the length of the magnetron 2 and also perpendicular thereto, ie in the transport direction of the substrate, can be well influenced and adjusted.

4 shows a schematic representation of the Doppelmagnetronanordnung with the process gas inlet between the two magnetrons 2 the Doppelmagnetronanordnung, wherein in the one-piece gas channel 6 via actuators 8th the reactive gases oxygen and nitrogen are admitted and via the gas channel segments 7 a second, segmented gas channel 6 the working gas argon is admitted into the process space. The mixer 9 for mixing the process gas components, before these into the process space or in the one-piece gas channel 6 are let in, are shown schematically.

LIST OF REFERENCE NUMBERS

1

Gas distribution system

2

magnetron

3

substratum

4

Transport direction of a substrate

5

Process gas component

6

one-piece or segmented gas channel

7

Gas duct segments

8th

Actuator (mass flow controller)

9

mixer

10

Plasma zone segment

11

Racetrack

12

Binärverteiler

Claims (8)

Process for the reactive deposition of oxynitride or oxicarbonitride layers of metallic or magnetron materials by magnetron sputtering from an elongated magnetron, - wherein the flow of the process gas of the sputtering process comprising the reactive gases oxygen and nitrogen as first and second process gas components and a working gas as another further process gas component, along the Racetracks (11) of the magnetron (2 ) is divided into segment process gas flows with associated plasma zone segments (10), - wherein a segment process gas flow from the gas flows of the process gas components in the respective Plasmazonensegment (10) is formed, and - the process gas components via at least two parallel juxtaposed in the longitudinal extension of the magnetron gas channels (6), of which at least one is formed segmented by means of gas channel segments (7) are admitted into a process space, characterized in that - at least the first and second process gas component mixed together by means of a one-piece or segment supplied gas channel (6) along the longitudinally extended magnetron (2), so that the gas quantity ratio of these at least two process gas components in the gas channel (6) along the elongated magnetron (2) is equal to and - that the segment process gas flows by means of gas flows over the Gas channel segments (7) of another segmented gas channel (6) supplied other further process gas component can be set segmentally so that the Plasmazonensegmentstoichiometry of each, the segment process gas flow corresponding Racetrackteils is equal or the Plasmazonensegmentstoichiometry of the segment process gas flows corresponding Racetrackteile to a predefined Differentiate way. Method according to Claim 1 , characterized in that the process gas component of the reactive gases via three gas channel segments (7) of a gas channel (6) are fed, whose lengths are formed in the ratio 1: 2: 1. Method according to one of the preceding claims, characterized in that the gas flows of process gas components and / or process gas mixtures are controlled separately from each other, each with an actuator (8). Method according to one of the preceding claims, characterized in that along the longitudinally extended magnetron (2) via at least three gas channel segments (7), a process gas component is supplied. Method according to one of the preceding claims, characterized in that along the longitudinally extended magnetron over five gas channel segments (7) a process gas component is supplied, wherein the lengths of the gas channel segments (7) in the ratio 1: 1: 4: 1: 1, preferably six gas channel segments in the segment length ratio 1: 1: 2: 2: 1: 1, are formed. Method according to one of the preceding claims, characterized in that the process gas components from the one-part gas channel (6) and the process gas component from the gas channel segments (7) are mixed together in segments and passed through a gas inlet system in the process space. Method according to one of the preceding claims, characterized in that the process gas components are mixed with a mixer (9) with a helical structure. Method according to one of the preceding claims, characterized in that it is used to produce oxynitride layers or oxicarbonitride layers of silicon, aluminum, titanium, tin or zinc.

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