DE102014112671A1 - Magnetron arrangement, processing arrangement and method for reactive sputtering - Google Patents

Abstract

According to various embodiments, a magnetron assembly (100) may include: a magnetron cathode (102k) having a material to be sputtered; a magnet assembly (102m) disposed relative to the magnetron cathode such that a plasma forming region (106) is provided over the material to be sputtered, wherein the plasma forming region comprises two elongated regions (106g) and two reverse regions (106k) annularly connecting the longitudinal regions ; a gas supply arrangement (108) having at least a first gas inlet (108a) and at least one second gas inlet (108b), wherein the gas supply arrangement (108) is arranged, the two longitudinally extending regions (106g) of the plasma formation region by means of the at least one first gas inlet (108a) to supply with a reactive gas (110a), and the two Umkehrbereiche (106k) of the plasma formation region by means of the at least one second gas inlet (108b) with an inert gas (110b) to flush such that in the two areas of reversal (106k) of the plasma formation substantially only the inert gas (110b) is present.

Description

The invention relates to a magnetron arrangement, a processing arrangement and a method for reactive sputtering.

In general, various coating methods can be used to apply layers or coatings to a substrate or other substrate. For example, chemical vapor deposition processes or physical vapor deposition processes, such as sputtering or so-called sputter deposition, can be used to produce thin layers. Modifications of cathode sputtering include, for example, reactive sputtering and reactive magnetron sputtering. In reactive sputtering, on the one hand, a working gas (eg, argon) is used to atomize the cathode (the target material), the working gas is not chemically incorporated into the layer deposited on the substrate, and on the other hand, at least one reactive gas is added the sputtered target material chemically reacts with the reactive gas and the reaction products deposit on the substrate or form on the substrate.

In reactive sputtering, coating a substrate with a layer having the appropriate layer properties may be accomplished by placing the sputter assembly in an operating point or operating condition and / or at an operating point. The operating point can specify the necessary operating parameters of the sputtering arrangement (eg a substrate transport speed, a target rotational speed, generator sizes, a gas pressure, materials, etc.), so that a corresponding layer with the respective desired or required properties or the properties according to a specification (Eg specific electrical resistance of the layer, chemical composition of the layer, layer thickness distribution of the layer on the surface of the substrate, optical properties of the layer, etc.) can be produced. In doing so, deviations of the sputtering process from one operating point globally for the entire sputtering process (e.g., by means of power control) and / or locally in a region of the sputtering process chamber may be compensated, e.g. by means of a controlled supply of a process gas (working gas or reactive gas) by means of a process gas supply or by means of a gas supply control in the relevant area of the sputtering process chamber.

Furthermore, the sputtering arrangement can have at least one generator for providing the electrical voltage to a magnetron cathode and the corresponding electrical current between the magnetron cathode and at least one anode. The electric current that flows at a voltage applied between the magnetron cathode and the anode may be dependent on the gases (e.g., the composition and / or pressure of the process gas) in the sputtering process chamber. Thus, for the generator as well as for the supply of the process gas different modes or control options and / or control options arise to set an operating point.

For an elongate magnetron, e.g. in the case of a planar magnetron or double planar magnetron or in a tubular magnetron or double tubular magnetron, the process gas (the working gas and / or the reactive gas) can be supplied to the magnetron by means of a gas supply segmented along the longitudinal extent (a segmented gas channel), the operating point of the Magnetrons locally by means of the supplied gas can be influenced (adjusted or regulated). Clearly, to deposit a homogeneous layer by means of reactive sputtering, it may be necessary to supply individual sections of the magnetron's magnetron cathode with different gases (e.g., different gas composition and / or pressure or gas flow). In other words, the process gas can be introduced into a processing space between a magnetron cathode and a substrate to be coated in such a way that the spatial density distribution (or the spatial distribution) of the process gas or components of the process gas is homogeneous (eg over the entire width of the substrate or above the entire substrate surface) on the substrate to be coated.

During sputtering, the layer-forming material (eg the sputtered target material and / or the reaction product formed therefrom during reactive sputtering) deposited on a substrate can self-deposit (redeposition) on the magnetron cathode, the area of the cathode in which the sputtering takes place (sputtering), is cleaned from the redeponierten material continuously. Outside the sputtering region, however, the material redeponed on the magnetron cathode can form a layer (in a so-called redeposition region of the cathode), which can impair sputtering. If the redeposited reaction product is electrically insulating, for example, an insulating layer can form on the magnetron cathode, which can hinder the charge balance between the magnetron cathode and the plasma and thus can excite voltage flashovers (so-called arcs, or so-called arcing) on the magnetron cathode. Such flashovers can damage the magnetron cathode, eg partially melt it, or detach material particles or material clusters from the magnetron cathode. If material particles are released from the magnetron cathode due to the arcing, these can be deposited, for example, on a substrate to be coated and contaminate the (condensing) layer growing on the substrate or be reflected by the substrate and accumulate on the magnetron cathode. In other words, the sputtering of reaction products during reactive sputtering can lead to particle contamination on the substrate.

A magnetron may, for example, have at least one magnetron cathode (a target) with a material to be sputtered (target material). The magnetron cathode may consist of the target material and be self-atomized or the magnetron cathode may comprise the target material, e.g. For example, the target material may be exposed on a surface of the magnetron cathode. Furthermore, a magnetron may have a magnet arrangement (a magnet system), which may be set up in such a way and arranged relative to the magnetron cathode that a plasma formation area is provided above the target material (eg an annularly closed plasma formation area, ie a so-called race track). wherein the plasma forming region may have two longitudinally extending portions (side by side) and two reverse portions annularly connecting the longitudinally extending portions.

The magnetron cathode and the plasma formation region (or the longitudinal regions of the plasma formation region) may extend in substantially the same direction. In this case, the reversal regions can define edge regions of the plasma formation region or edge regions of the magnetron cathode, wherein substantially no material is atomized by the magnetron cathode in the edge regions and thus redeposition of reaction products in the edge regions can take place.

Conventionally, undersupplying the peripheral regions of the magnetron cathode with reactive gas may prove inadequate because sufficient reactive gas (e.g., due to pressure gradients or due to diffusion) may still reach the edge regions. For example, the reactive gas supplied to the longitudinally extended regions of the race track can propagate into the edge regions and thus lead to the redeposition of the reaction materials formed thereon on the magnetron cathode.

One aspect of various embodiments can be seen illustratively in providing a gas delivery assembly that controls or controls the supply of gas such that the edge regions of the magnetron cathode or the two reverse regions of the race track are substantially flushed with inert gas only. It can thereby be achieved that the edge regions remain as free as possible of reactive gas, so that atomized material can react only insignificantly with the reactive gas there. In this case, the plasma generation in the two reverse regions can be maintained (for example, the inert gas can act as a working gas or be the working gas) so that the plasma in the race track can clearly burn. This makes it possible to keep the redeposition region (e.g., the peripheral region of the magnetron cathode) free of redeposited insulating layers and thus to reduce particle contamination during sputtering or damage to the magnetron cathode due to arcing.

Conventionally, damage to the magnetron cathode due to voltage flashovers can be reduced by briefly interrupting the voltage supply which supplies the magnetron cathode with electrical energy when a flashover is detected, so that an electrical current flow generated by the flashover can be limited. It is accepted, for example, that at the same time the formation of the plasma is interrupted when the power supply is interrupted. This can impair the deposition of the layer, since, for example, less target material is sputtered for a short time.

Various embodiments are illustratively based on enabling the most stable possible process behavior of the reactive sputtering process. Thereby, a continuous coating can be made possible, for example in an in-line process plant, by means of which substrates to be coated continuously (as a so-called substrate strip) continuously pass the coating area. In such systems, for example, a brief interruption of sputtering would cause a costly process scrap of substrates or layers when the power supply is interrupted. Furthermore, the stable process behavior enables reduced particle contamination and reduced variance in the properties of the deposited layers, and thus the stable process behavior clearly allows for higher process quality.

According to various embodiments, a gas supply for a magnetron is provided for operating a reactive sputtering process, wherein by means of the gas supply part of the race track or a part of the magnetron cathode (For example, the two elongated regions of the race track or the central regions of the magnetron cathode between two edge regions of the magnetron cathode) is supplied with reactive gas, so that there can run a reactive process, and wherein by means of the gas supply another part of the race track or magnetron cathode (Eg, the two reversal areas of the race track or the edge regions of the magnetron cathode) are kept substantially free of reactive gas, so that there can run essentially no reactive process.

A magnetron assembly according to various embodiments may include: a magnetron cathode having a material to be sputtered; a magnet arrangement which is arranged relative to the magnetron cathode in such a way that a (eg annularly closed) plasma forming region is provided above the material to be sputtered, wherein the plasma forming region comprises two longitudinally extending regions (eg side by side) and two longitudinally extending regions (eg curved) ) Has reversal areas; a gas supply arrangement having at least one first gas inlet for supplying the two longitudinally extending regions of the plasma formation region with a first gas such that essentially only the first gas is present in the two longitudinal regions of the plasma formation region, and at least one second gas inlet for supplying the two regions of reversal of the plasma formation region with a second gas such that substantially only the second gas is present in the two reversal regions of the plasma formation region, so that the two reversal regions remain substantially free of a reaction material resulting from a chemical reaction of the material to be sputtered of the magnetron cathode with the first Gas results; wherein the first gas has at least one reactive gas; and wherein the second gas comprises inert gas.

According to various embodiments, a magnetron assembly may comprise: a magnetron cathode having a material to be sputtered; a magnet assembly disposed relative to the magnetron cathode such that a plasma forming region is provided over the material to be sputtered, the plasma forming region having two longitudinal regions and two reverse regions annularly connecting the longitudinal regions; a gas supply arrangement having at least one first gas inlet for supplying the two elongate regions of the plasma formation region with a reactive gas, and at least one second gas inlet for purging the two reversal regions of the plasma formation region with an inert gas such that essentially only the inert gas is present in the two reversal regions of the plasma formation region is.

In this case, the admission of the reactive gas and the inert gas by means of the gas supply arrangement can be such that Redepositionsbereiche at the two reversal regions of the plasma formation region (the race track) remain substantially free of a reaction material, which from a chemical reaction of the material to be sputtered with the magnetron cathode gives the first gas.

For sputtering, the formation of the plasma may be assisted by means of a magnetic field which may influence the ionization rate of the plasma-forming gas (e.g., the working gas). The magnetic field can be generated by means of a magnet arrangement (by means of a magnet system), whereby by means of the magnetic field an annular plasma formation area (plasma channel), i. a so-called race track, can be formed in which the plasma can form. For sputtering, the target material may be disposed between the annular plasma forming region and the magnet system so that the target material can be penetrated by the magnetic field and the annular plasma forming region on and / or over the target material, or on and / or over a surface to be sputtered the magnetron cathode can run.

The shape (illustratively the geometric shape) of the annular plasma formation region may be defined by the geometry of the magnet assembly. If, for example, the magnet arrangement is elongate, the plasma formation region can also be elongate and be provided, for example, oval or in the form of a rectangle with rounded corners. The longitudinally extending magnet arrangement can, for example, have three rows of magnets, of which an internal row of magnets is arranged between two outer rows of magnets, the three rows of magnets generating the elongate plasma formation areas.

The two outer rows of magnets may each be connected to each other at their opposite end portions and there generate two curved plasma forming regions (reversal regions) which connect the elongated plasma forming regions with each other to an annular (and closed) plasma forming region.

A magnetron assembly according to various embodiments may include: a magnetron cathode having a surface to be sputtered; a magnet arrangement arranged in such a way relative to the magnetron cathode in that an annular plasma-forming region is provided over the surface to be sputtered, the annular plasma-forming region having two longitudinal regions and two reverse regions (peripheral regions of the plasma-forming region) connecting the longitudinal regions; a gas delivery assembly having at least a first gas inlet for supplying the two elongate regions of the annular plasma formation region with a first gas and at least one second gas inlet for supplying the two regions of reversal of the annular plasma formation region with a second gas; wherein the gas supply arrangement is arranged to control the first gas inlet such that the first gas has at least one reactive gas; and wherein the gas supply arrangement is arranged to control the second gas inlet such that the second gas has more than 50 at% inert gas.

Clearly, the inert gas may have a gas which is inert, in other words which participates only in a few chemical reactions. For example, an inert gas may be defined by the target material used. For example, an inert gas may have a gas or a gas mixture which does not react with the magnetron cathode (cathode) or with the target material to form a solid (which could deposit on the magnetron cathode, for example, or which could remain on the magnetron cathode). In other words, an inert gas may also comprise a gas or gas mixture whose reaction product is volatile with the target material, e.g. is gaseous or has a high vapor pressure, so that the reaction product (reaction material) of the target material with the inert gas can not form a layer on the target, or at least no layer containing the reaction product of the target material with the inert gas.

The inert gas may include, for example, a noble gas (e.g., helium, neon, argon, krypton, xenon, radon) or multiple noble gases. The inert gas can be used for example as a working gas, wherein the plasma can be formed from the working gas, which essentially causes the sputtering of the magnetron cathode, or of the target material.

The reactive gas may include a gas which reacts with the target material (and / or with the sputtered target material) and / or may be incorporated into the deposited layer by a chemical reaction, eg oxygen, nitrogen, nitrogen oxides, carbon oxides and / or ozone). For example, if a target material capable of forming a nitride is used, or if a nitride of the target material is to be deposited, the reactive gas may have nitrogen. The reactive gas may, for example, comprise a gas mixture of a plurality of gases which react with the target material and / or the deposited layer, for example oxygen and nitrogen, for example when an oxynitride (eg AlO _x N _y ) is to be deposited.

For example, a metal or semimetal may be sputtered by means of the working gas, and by means of a supplied reactive gas, a metal compound or semimetal compound may be deposited on a substrate, e.g. a metal oxide or semimetal oxide with oxygen as the reactive gas, a metal nitride or semimetal nitride with nitrogen as a reactive gas, a metal oxynitride or semimetal oxynitride with oxygen and nitrogen as the reactive gas, or another metal compound or semimetal compound with another reactive gas (e.g., a metal carbide or semimetal carbide with a carbon-containing reactive gas).

The reactive gas and the working gas may be supplied together or separately as a process gas, for example by means of a gas supply arrangement, e.g. by means of the first gas supply arrangement. The inert gas (or the working gas) can be introduced separately, for example, by means of a second gas supply arrangement in the reverse areas.

A gas supply assembly may be illustratively arranged to provide the plasma forming region with a gas, e.g. to be able to supply an inert gas and / or a reactive gas. For this purpose, the gas supply arrangement can have a gas inlet, which is arranged and aligned relative to the magnetron cathode in such a way that the gas can be brought into the plasma formation area by means of the gas supply. Furthermore, the gas supply arrangement may comprise a gas supply, for example a gas duct or a plurality of gas ducts, for providing at least one gas inlet.

According to various embodiments, the magnetron cathode may be formed as a tube cathode (tubular cathode), and wherein the magnet arrangement is arranged within the tube cathode. Illustratively, the tube cathode can be part of a tube magnetron or a double tube magnetron. For example, the tube cathode may comprise a tubular support on which (e.g., brittle and / or fragile) target material may be affixed, or the tube cathode may comprise a tube-shaped target material (e.g., a tube of target material).

According to various embodiments, the magnetron cathode may be formed as a planar cathode (eg with plate-shaped targets), wherein the magnet arrangement is arranged on the side of the planar cathode opposite the annular plasma-forming region. Clearly, the planar cathode can be part of a planar magnetron and / or part of a double planar magnetron. The planar cathode can, for example, have a plate-shaped support on which (for example, brittle and / or fragile) target material can be fastened or the planar cathode can have a plate-shaped target material (for example a plate of target material).

According to various embodiments, a magnetron arrangement may comprise two magnetron cathodes, which may be jointly configured as a double-tube cathode or a double-planar cathode.

According to various embodiments, an electric field may be provided for sputtering between a magnetron cathode (e.g., a planar magnetron cathode of a planar magnetron or a tubular magnetron cathode of a tubular magnetron) and an anode associated with the magnetron cathode. Illustratively, a magnetron cathode can act as an electrode. For this purpose, the magnetron cathode can be supplied with electrical energy (in other words with electrical current and electrical voltage), so that a current flow can be formed between the magnetron cathode and the anode.

If the second gas has more than 50 at% inert gas, it can be clearly achieved that the reversal regions are purged with inert gas in such a way that so little reaction material is formed in the reversal regions that a redeposition can not interfere with the reactive sputtering process, e.g. An arcing can be prevented or reduced or become. Furthermore, the proportion of the inert gas in the second gas for purging the two reverse regions of the race track can be adapted to the target material used, for example. Clearly, the greater the reactivity of the target material, the greater the proportion of inert gas in the second gas needed to prevent flashovers. For example, a target material may require that the second gas be greater than 60 at% inert gas, greater than 70 at% inert gas, greater than 80 at% inert gas, greater than 90 at% inert gas, or even substantially pure (eg, greater than 99 at%). ) Has inert gas.

If the target material forms a reaction material with a low electrical conductivity with the reactive gas, even a small proportion of the reaction material deposited in the redeposition zone (outside the plasma formation region) can be sufficient to trigger flashovers. For example, a target material may require the second gas to have greater than 80 at% inert gas, e.g. more than 90 at% inert gas and / or that the second gas consists essentially or completely of inert gas.

As described above, in order to atomize the target material in the elongated regions of the race track, a reactive gas may be supplied in addition to a working gas which chemically reacts with atomized target material to form a reaction material (reaction product). The reaction material may spread in the direction of a substrate to be coated so that the reaction material may be deposited on the substrate to be coated or may condense on the substrate to be coated.

In order that a layer with desired or required properties or properties can be produced according to a specification (eg specific electrical resistance of the layer, chemical composition of the layer, layer thickness distribution of the layer on the surface of the substrate, optical properties of the layer, etc.) it may be necessary to control and / or control the ratio of working gas to reactive gas which together are supplied to the sputtering process gas and / or the proportion of reactive gas in the second gas (in the process gas for supplying the elongated regions of the race track) to regulate.

According to various embodiments, a processing arrangement may include a process chamber having at least one coating space (or coating area), a magnetron assembly disposed in the process chamber above the coating space for coating a substrate in the coating space.

For example, the magnetron assembly may be disposed relative to the coating space such that sputtered material or a reaction material formed from the sputtered material propagates through the magnetron assembly into the coating space. In this way, it can clearly be achieved that a substrate arranged in the coating space can be coated with the atomized material and / or the reaction material.

In accordance with various embodiments, a processing assembly may further include an aperture structure that extends at least between the coating space and one of the two return regions. In this way, it can be clearly achieved that material propagating from the reversal regions of the plasma formation region in the direction of the coating space (eg atomized material and / or from the atomized material formed reaction material) is deposited on the diaphragm structure.

Since the reverse regions by means of the second gas e.g. can be supplied so that in the two reversal areas substantially only the inert gas is present, the propagating from the reversal areas in the direction of the coating chamber material, for example, have too little reaction material, so that a layer can be formed with predefined properties. Illustratively, due to the provision of the reverse regions with the second gas, the material originating from the reverse regions of the plasma formation region may have a different chemical composition than the material derived from the longitudinal regions of the plasma formation region. This may make it difficult, for example, to deposit a layer with a predefined chemical composition.

By means of the diaphragm structure, the coating space can be clearly shielded from the material which originates from the reversal areas.

The diaphragm structure may be one or more diaphragms, e.g. Sheets or plates, wherein the diaphragm structure may be arranged such that the propagating in the direction of the diaphragm structure material adheres to the diaphragm structure. For example, a surface of the diaphragm structure may be roughened or, for example, by means of sandblasting. The visor structure may comprise a metal, for example, according to various embodiments. Steel or aluminum.

Furthermore, the diaphragm structure may be electrically floating, i. electrically decoupled from the electrical ground and the magnetron assembly (e.g., not electrically connected to the cathode-anode power supply circuit). This can be achieved, for example, that the aperture structure affects the sputtering process as little as possible.

According to various embodiments, a processing arrangement may further comprise a transport device for transporting a substrate in a (planar or curved) transport plane in the coating space, the screen structure extending at least between the transport plane and one of the two reversal areas. In this way it can be clearly understood that further substrates transported in the transport plane, e.g. continuously transported through the coating space substrates from which can be shielded from the two reversal areas derived material.

According to various embodiments, the diaphragm structure may be extended between the magnetron assembly and the coating space, wherein the diaphragm structure is penetrated by a passage opening between the coating space and the two longitudinally extended regions of the plasma formation region. Illustratively, the diaphragm structure may have a diaphragm which extends between the magnetron arrangement and the coating space (or the transport plane). In order for a substrate to be coated to be coated with the material derived from the two longitudinally extending regions, the aperture may have a through opening through which material originating from the two elongate regions may spread into the coating space.

According to various embodiments, a method of reactive sputtering may include: generating a plasma over a surface to be sputtered in a plasma forming region, the plasma forming region having two elongate regions and two reverse regions connecting the elongate regions; Supplying the elongate regions with a first gas having at least one reactive gas; and supplying the two reverse regions with a second gas having greater than 50 at% inert gas.

According to various embodiments, the second gas may have greater than 60 at% inert gas, greater than 70 at% inert gas, greater than 80 at% inert gas, greater than 90 at% inert gas, or greater than 99 at% inert gas.

According to various embodiments, a method of reactive sputtering may include: generating a plasma over a surface to be sputtered in a plasma forming region, the plasma forming region having two elongate regions and two reverse regions connecting the elongate regions; Supplying the elongate regions with a first process gas having at least one working gas and at least one reactive gas; and supplying the two reversal regions with a second process gas which has at least one working gas and at least one reactive gas, wherein the second process gas has less reactive gas than the first process gas. For example, the first process gas may have a first percentage (eg, atomic percent or molecule percent, at%) of reactive gas and the second process gas may have a second percentage (eg, atomic percent) of reactive gas, with the first percentage more than twice the size of the second percentage.

According to various embodiments, a method of reactive sputtering may include: generating a plasma over a surface to be sputtered in a plasma forming region, the plasma forming region having two elongate regions and two reverse regions connecting the elongate regions; Supplying the elongate regions with a first process gas having at least one working gas and at least one reactive gas; and supplying the two reverse regions with a second process gas having substantially only one working gas (e.g., except for common contaminants).

According to various embodiments, a method of reactive sputtering may include: generating a plasma over a surface to be sputtered in a plasma forming region, the plasma forming region having two elongate regions and two reverse regions connecting the elongate regions; Supplying the elongated regions with a process gas, wherein the process gas comprises at least one reactive gas, so that in the two longitudinally extending regions, sputtering is carried out in a reactive manner (for example, oxide-forming and / or nitride-forming); and supplying the reverse regions substantially only with inert gas so as to keep the reactive gas away from the two reverse regions to supply the two longitudinal regions such that sputtering is not reactive (e.g., metallic) in the two reverse regions.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A and 1B two schematic views of a magnetron arrangement, according to various embodiments;

2A and 2 B in each case a schematic view of a magnetron arrangement, according to various embodiments;

3A and 3B in each case a schematic view of a magnetron arrangement, according to various embodiments;

4A to 4C in each case a magnetron cathode after a reactive sputtering process, which was carried out by means of a conventional magnetron arrangement;

5A a schematic view of a processing arrangement with a magnetron assembly, according to various embodiments;

5B a schematic view of a magnetron, according to various embodiments;

6 a schematic view of a processing arrangement with a magnetron assembly and a diaphragm structure, according to various embodiments; and

7A and 7B in each case a schematic view of a diaphragm structure and a magnetron arrangement of a processing arrangement, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In the case of reactive sputtering of electrically insulating reaction materials or electrically poorly conductive reaction materials, for example of a metallic (or electrically conductive) planar target, in a conventional magnetron arrangement it may become electrically isolated due to the formation of a redeposition zone in the vicinity of (along) the race track Surface coverage of the target with electrically insulating material (eg with reaction materials) come, causing Voltage flashovers, called arcing, can be stimulated. Due to the surface coverage, the race track may become constricted, eg at the redeposition zone. Furthermore, particle formation (or particulate pollution) can occur.

Furthermore, a tube target can be used for reactive sputtering. When using a tube target, forming a redeposition zone on either side of the race tracks can be prevented, as opposed to the planar target. For example, with a tube target, a disruptive redeposition between the elongated regions of the race track or adjacent to the elongated regions of the race track due to the rotation of the tube cathode can be prevented because due to the rotation of the tube cathode, the deposited material in these areas is atomized again.

Clearly, in reactive sputtering, the target surface of the tube target can be continuously cleaned from the redeposite (the redeposited material) due to the rotation of the tube target about the tube axis. In a conventional magnetron arrangement with a tube target, however, a redeposition zone can form in the areas of the race track reversal (in the reversal areas) (compare, for example 4A to 4C ).

Thus, at the redeposition zones, electrically insulating layers can be formed, as described above, which can disturb and / or constrict the race track and, for example, obstruct the electron ring current along the race track. A sharp transition between electrically insulating and electrically conductive material on the cathode can easily lead to arc formation (arcing). This can also lead to metallic spatters that can be reflected, for example, on the substrate and reach the target again and can be sources of particulate contamination of the substrate to a very disturbing extent.

Further, the race track reversal may be a source for smaller arcs. For example, in regular operation with conventional magnetron arrangements, smaller sparks may occur at the race track reversals, ie smaller arcs which, although they do not necessarily cause the target material to melt, can emit particles. According to various embodiments, these smaller arcevents (as well as the larger ones) can be avoided by keeping the target metallic at the race track reversal and thus not covered with an insulating layer.

In the case of a Planar Magnetron or a Double Planetary Magnetron, if the linear running race track areas are supplied with reactive gas, a redeposition in the race track reversal can be reduced, or in the race track reversal, metallic sputtering can occur. At the edges of the magnetron cathode with the race track reversal, the race track (or the erosion pit in the target under the race track) may become wider than in the middle (in the elongated areas of the race track) because of the lack of reactive gas in the race track reversal the target surface remains metallic. Such a passive approach (e.g., omitting reactive gas in the peripheral areas of the magnetron cathode without flushing the peripheral areas with inert gas) may only partially suppress arcing in a planar magnetron array. For example, insulating material can deposit in the reactively sputtered part or reactive gas can spread out of the center area supplied with reactive gas into the edge regions.

According to various embodiments, a magnetron assembly and a processing assembly are provided, as well as a method of reactive sputtering wherein a redeposition zone at the race track reversal of a magnetron cathode is prevented or at least reduced. For example, a magnetron tube (a tubular magnetron cathode) due to the rotation during the reactive sputtering can be kept completely conductive in order to suppress or at least reduce arcing and thus particle formation.

According to various embodiments, a tubular magnetron may be supplied with a tubular cathode by reactive gas (e.g., process gas) by means of multi-segmented reactive gas channels which may be disposed on the sides of the tubular magnetron. In this case, the segments that are opposite to the race track reversal, i. which supply the race track reversals, are not operated with reactive gas but with working gas (supplied). This flushes the race track inversion with working gas so that essentially no reactive gas can get into the race track reversal. Furthermore, due to the lack of reactive gas in the race track reversal, metallic sputtering occurs.

According to various embodiments, the target supernatant over the substrate (in the width direction transverse to the substrate transport direction) may be significantly larger than in a conventional magnetron arrangement, wherein the metal sputtered material above the substrate plane can be captured by means of a shield (a diaphragm structure). The wider processing arrangement can have better process stability, and thus Any disadvantages due to the increased width can be compensated. According to various embodiments, the magnetron cathode may protrude more than 20 cm beyond the substrate to be coated (in the width direction transverse to the substrate transport direction).

In the case of a low-cost target material, such as aluminum, the additional target material costs may be negligible due to the larger target supernatant against the gain in process stability. Especially with particle-sensitive processes a reduced arcing can be of importance. At the same time, the race-track reversal as a source of particles can not only be essentially freed from arcing, but also covered by shields (e.g., located between the magnetron cathode and the coating area). The metallic layers of the target material sputtered onto such a shield furthermore adhere significantly better than the electrically insulating and / or ceramic brittle layers of the chemically reacted target material, so that the chips can be prevented from flaking off the shield even with temperature differences, or at least can be reduced.

According to various embodiments, an apparatus and method for reactive sputtering (for reactive sputter deposition) of materials are described herein. In this case, the layer material to be deposited may comprise, for example, a metal oxide, a semimetal oxide, a metal nitride, a semimetal nitride, a metal oxynitride, a semimetal oxynitride, a metal carbide and / or a semimetal carbide, wherein the metal (eg provided by the target), for example aluminum, magnesium, titanium, Tin, zinc, indium or zirconium and / or wherein the semimetal (eg provided by the target) may comprise, for example, silicon, boron or germanium.

According to various embodiments, the stoichiometry of the reactive process may be or may be suitably adjusted at the target, e.g. by means of a segmented gas supply and a corresponding control that can condense layers of defined stoichiometry on the substrate.

According to various embodiments, in reactive sputtering, the gas supply (eg, the number of gas inlets and the spatial arrangement of the gas inlets relative to the magnetron cathode and the corresponding gas inlet directions and the gases and gas flows used) may be provided such that a layer having the desired (with predefined) layer properties can be deposited on a substrate to be coated.

The admission of the reactive gas (or of the process gas) can for example take place close to the two longitudinally extended regions of the race track in order to be able to influence the two longitudinally extended regions of the race track as locally as possible. The intake of the inert gas, for example, can be done close to the two race tracks reversals in order to influence the two race track reversals as locally as possible.

The local stoichiometry of the plasma can be determined, for example, by means of optical emission spectrometry (OES), so that, for example, the reactive gas flows and / or working gas flows (inert gas flows) can be adapted locally (for example, regulated based on the OES). Thus, for example, the processes at the target can be controlled and thus also the layer stoichiometry and / or the layer properties of the layer growing on the substrate.

1A illustrates a magnetron arrangement 100 with a magnetron 102 and a gas supply assembly 108 according to various embodiments. In this case, the magnetron 102 (or the magnetron arrangement 100 ) at least one magnetron cathode 102k having a surface to be atomized 102 o , where in 1A a schematic plan view of the surface to be atomized 102 o the magnetron cathode 102k is shown. The magnetron cathode 102k or the magnetron 102 can be elongated, eg in the direction 101 , wherein the magnetron cathode 102k may have a length in a range of about 1 m to about 5 m. Thus, for example, a substrate by means of the magnetron 102 coated, wherein the substrate has a width of less than the length of the magnetron cathode 102k can be and perpendicular to the direction 101 relative to the magnetron 102 is moved (for example, a substrate to be coated during a reactive sputtering process by means of the magnetron 100 be coated while the substrate is parallel to the direction 103 is transported).

1B illustrates the in 1A illustrated magnetron arrangement 100 in a schematic cross-sectional view 101s (perpendicular to one from one direction 101 and one direction 103 spanned level). According to various embodiments, the magnetron cathode 102k be arranged as a planar cathode or a tube cathode, wherein the magnetron cathode 102k comprises or consists of a material to be sputtered (a target material). Clearly, at least one surface to be atomized 102 o of the target material or the magnetron cathode 102k exposed.

Furthermore, the magnetron arrangement 100 a magnet arrangement 102m exhibit. Such as in 1B is shown, the magnet assembly 102m such relative to the magnetron cathode 102k be arranged or be that over the surface to be atomized 102 o a plasma forming area 106 (Race track) is provided, wherein the plasma formation area 106 two elongated areas 106g and two reverse regions annularly connecting the longitudinally extending portions 106k (Race Track Inverting). In the reverse areas 106k can the plasma formation area 106 clearly curved. In the long stretched areas 106g For example, the plasma formation region can be clearly linear.

Furthermore, the magnetron arrangement 100 a gas supply arrangement 108 have for supplying the plasma formation region 106 with a working gas and / or a reactive gas having a predefined composition and / or a predefined spatial distribution. Illustratively, the magnetron cathode 102k the magnetron 102 by means of a gas supply arrangement 108 be supplied with the process gases necessary for the operation, wherein the gas supply by means of the gas supply arrangement 108 such that the reversal areas 106k of the race track 106 essentially only inert gas 108b is fed and that the elongated areas 106g of the race track 106 a corresponding process gas (working gas and / or reactive gas) is supplied regulated.

The gas supply arrangement 108 can have at least a first gas inlet 108a for supplying the two longitudinal areas 106g of the plasma formation region 106 with a first gas 110a (eg with a reactive gas) or a first gas mixture 110a (Eg a mixture of a working gas and a reactive gas). The first gas inlet 108a may be arranged (eg arranged and aligned) that in the two longitudinally extended areas 106g of the plasma formation region 106 essentially only the first gas 110a is available. This can be the first gas 110a at a mean velocity, or average exit velocity, and with a directional component toward the plasma formation region 106 from the first gas inlet 108a escape.

Furthermore, the gas supply arrangement 108 at least one second gas inlet 108b for supplying the two reversal areas 106k of the plasma formation region 106 with a second gas 110b (For example, with a reactive gas) or a second gas mixture 110b (Eg, a gas mixture with a large proportion of working gas, eg more than 50 atomic percent inert gas). The second gas inlet 108b may be arranged (eg arranged and aligned) such that in the two reversal areas 106k essentially only the second gas 110b is available. This can be the second gas 110a at a mean velocity, or average exit velocity, and with a directional component toward the plasma formation region 106 from the second gas inlet 108b escape.

The first gas inlet 108a and / or the second gas inlet 108b may / may for example be formed by one or more openings in a gas channel. For example, the first gas inlet may / may 108a and / or the second gas inlet 108b a gas distributor and / or a nozzle, which defines the direction with which the respective gas 110a . 110b through the corresponding gas inlet 108a . 108b through in the direction of the plasma formation region 106 flows. According to various embodiments, the first gas inlet may 108a and / or the second gas inlet 108b be set up so that a predefined flow field is generated with the respective gas 110a . 110b in the direction of the plasma formation region 106 flows.

For example, the first gas inlet 108a and the second gas inlet 108b be set up such or be that a mixing of the introduced first gas 110a with the introduced second gas 110b as low as possible. This can be achieved, for example, that in the two reversal areas 106k essentially only the second gas 110b is present, eg essentially only inert gas.

In other words, by means of the gas supply arrangement 108 a gas or a gas mixture in the plasma forming region 106 be introduced, for example, the reversal areas 106k be flushed with inert gas. This can be achieved, for example, that the reactive gas by means of the inert gas, which is supplied to the elongated areas, from the reversal areas 106k can be displaced so that graphically as little reactive gas in the reverse areas 106k can get. The less reactive gas in the reverse areas 106k The lower the reaction material can be in the reverse regions 106k are formed from the sputtered target material, and the less a redeposition 111 in the border areas 102r the magnetron cathode 102k ,

According to various embodiments, a first gas flow of the first gas 110a and a second gas flow of the second gas 110b such by means of the gas supply arrangement 108 Be provided or be in the area of Race tracks 106 essentially no pressure gradient is formed, so that reactive gas, which by means of the gas inlet 108a in the direction of the elongated race track areas 106g is initiated, not in the reverse areas 106k of the race track 106 flows.

During sputtering, ie during the sputtering process, can be in the reverse areas 106k sputtered material in the border area 102r the magnetron cathode 102k get in and out in the border area 102r at the magnetron cathode 102k attach (redeposition 111 ). The more reactive gas in the reverse area 106k The more electrically insulating (chemically reacted) material can be in the edge region 102r the magnetron cathode 102k attach. Therefore, to prevent voltage discharges (arcing), it may be necessary or helpful to have as little reactive gas in the reverse region as possible 106k arrives.

2A and 2 B illustrate a magnetron arrangement 100 with a planar magnetron 102 ie a magnetron arrangement 100 with a planar (planar) magnetron cathode 102k in a schematic cross-sectional view.

To generate a magnetic field, the magnetron can 102m two outer rows of magnets 202a and one between the outer rows of magnets 202a arranged inner magnet series 202i exhibit. The outer rows of magnets 202a may magnetize with a directional component toward the magnetron cathode 102k have, wherein the inner magnet series 202i a magnetization with a direction component in the direction away from the magnetron cathode 102k can have.

The magnetic flux of the magnetron cathode 102k penetrating magnetic field can from one of the outer rows of magnets 202a emerge, the magnetron cathode 102k penetrate, and into the inner magnet series 202i enter. Furthermore, this can be the magnetron cathode 102k penetrating magnetic field the plasma area 106 penetrate, being in the plasma region 106 the formation of a plasma can be assisted by means of the magnetic field.

The magnet arrangement 102m can be a return plate 202r on which the magnet rows 202i . 202a can be attached. The return plate 202r may comprise a ferromagnetic material. This can be achieved, for example, that of the magnet series 202i . 202a Magnetic field generated a force between the magnets of the magnet series 202i . 202a and the return plate 202r mediates, so that the magnets of the magnet series 202i . 202a with the force against the return plate 202r press and are so vividly attached (in other words adhere).

According to various embodiments, the magnet assembly 102m the shape and / or location of the race track 106 over the surface to be atomized 102 o of the target or the magnetron cathode 102k define.

As in the 2A and 2 B For example, the first gas may be illustrated 110a (a process gas 110a from working gas and / or reactive gas) at an angle to the surface to be atomized 102 o the race track 106g be fed or parallel to the surface to be atomized 102 o the race track 106g be supplied. Illustratively, the gas supply arrangement 108 laterally (eg one-sided or two-sided) next to the race track 106g , next to the magnetron cathode 102k or next to the magnetron 102 be arranged. Furthermore, the gas supply arrangement 108 as a gas channel (for example as a segmented gas channel) with several gas inlets 108a . 108b parallel to the length of the race track 106g , the magnetron cathode 102k or the magnetron 102 extend.

3A and 3B illustrate a magnetron arrangement 100 with a tube magnetron 102 ie a magnetron arrangement 100 with a tubular magnetron cathode 102k in a schematic cross-sectional view.

The tube cathode 102 a tubular magnetron 102 can be rotatably mounted, for example, rotatable in a direction of rotation 301 , This can be done with the magnetron arrangement 100 For example, have at least one end block (eg, an end block or two end blocks), by means of which the tube cathode 102 is rotatably mounted. Furthermore, the at least one end block can be set up, the tube cathode 102 to supply, for example with cooling water and / or electrical energy, and to drive, for example by means of a coupling to a motor.

To generate a magnetic field, the magnetron can 102m two outer rows of magnets 202a and one between the outer rows of magnets 202a arranged inner magnet series 202i exhibit. The outer rows of magnets 202a can magnetize with a directional component in a direction away from the axis of rotation of the magnetron cathode 102k have, wherein the inner magnet series 202i a magnetization with a direction component in the direction of the axis of rotation of the magnetron cathode 102k can have.

The magnetic flux of the magnetron cathode 102k penetrating magnetic field can from one of the outer rows of magnets 202a emerge, the mantle of the magnetron cathode 102k penetrate, and into the inner magnet series 202i enter. Furthermore, this can be the magnetron cathode 102k penetrating magnetic field the plasma area 106 penetrate, being in the plasma region 106 the formation of a plasma can be assisted by means of the magnetic field.

The magnet arrangement 102m can be a return plate 202r on which the magnet rows 202i . 202a can be attached. The return plate 202r may comprise a ferromagnetic material. This can be achieved, for example, that of the magnet series 202i . 202a Magnetic field generated a force between the magnets of the magnet series 202i . 202a and the return plate 202r mediates, so that the magnets of the magnet series 202i . 202a with the force against the return plate 202r press and are so vividly attached (in other words adhere).

According to various embodiments, the magnet assembly 102m the shape and / or location of the race track 106 over the surface to be atomized 102 o (Over the outer circumferential surface of the tube cathode or the tube target) of the target or the magnetron cathode 102k define.

As in the 3A and 3B For example, the first gas may be illustrated 110a (a reactive gas 110a or a process gas 110a from working gas and reactive gas) by means of the gas supply arrangement 108 the race track 106g be supplied. Illustratively, the gas supply arrangement 108 laterally (eg one-sided or two-sided) next to the race track 106g , next to the magnetron cathode 102k or next to the magnetron 102 be arranged. Furthermore, the gas supply arrangement 108 as a gas channel (for example as a segmented gas channel) with several gas inlets 108a . 108b parallel to the length of the race track 106g , the magnetron cathode 102k or the magnetron 102 extend.

4A . 4B and 4C each illustrate a tube cathode 102 or a pipe target 102 in a perspective view, wherein the tube cathode 102 or the pipe target 102 according to a reactive sputtering process carried out in a conventional manner (eg without inert gas purging of the reverse regions). In the figures, the redeposition zones are respectively 401 and the sputtering area 402 the tube cathode 102 or the pipe target 102 displayed.

For example, illustrated 4A the tube cathode 102 or the pipe target 102 in the range (eg below) of the race track reversal 106k according to a conventionally performed reactive AlO _x N _y sputtering. Next to the sputtered area 402 (eg at the axial end portions of the tube cathode) are in the redeposition zone 401 (in the unsputed area 401 ) attached electrically insulating material and further arc traces recognizable.

In 4A is the example of an aluminum tube 102k , which was sputtered over the entire length in an O ₂ / N ₂ -containing atmosphere, the sharp transition between metallic tube 402 and redeposit covered pipe 401 illustrated. Furthermore, by way of example, a clear Arcevent 406 recognizable, resulting in surface changes of the pipe 102k in the redeposition zone 401 has led.

Further shows 4B the example of an aluminum tube 102k which was sputtered over the entire length in an O ₂ / N ₂ -containing atmosphere (ie, with a reactive gas mixture), a material reflow 406 as a result of an arc shortly after the beginning of the redeposition zone 401 ,

Further shows 4C the example of an aluminum tube 102k which was sputtered over the entire length in an O ₂ / N ₂ -containing atmosphere (ie with a reactive gas mixture), Spratzer 404 (Particles or deposits) on the tube target 102k after an Arcevent. For example, material may be emitted towards the substrate and then reflected back from the substrate and onto the tube target 102k reach.

The following are various modifications and configurations of the magnetron assembly 100 and details of the gas guide, with the above-described basic features and functions can be included analogously. Furthermore, the features and functions described below can analogously to those in the 1A to 4C described magnetron arrangement 100 be transferred or with the in the 1A to 4C described magnetron arrangement 100 be combined. Each of the above-described magnetron arrangements 100 may for example be part of a processing arrangement 500 be, wherein by means of the processing arrangement 500 at least the vacuum environment for performing a sputtering process by means of the magnetron assembly 100 is provided, cf. for example 2A and 2 B ,

According to various embodiments, the processing arrangement 500 a vacuum processing chamber 502 wherein, by means of the vacuum processing chamber 502 a coating area 501b within the vacuum processing chamber 502 provided. In this case, at least one magnetron arrangement 100 (Eg a magnetron arrangement 100 with a tube magnetron 102 or a magnetron arrangement 100 with a planar magnetron 102 ) with the vacuum processing chamber 502 coupled to coat a substrate 520 within the coating area 501b the vacuum processing chamber 502 ,

As in 5A is illustrated in a schematic cross-sectional view, a processing arrangement 500 Comprising: a vacuum processing chamber 502 (a sputtering process chamber), a transporting device for transporting a substrate 520 in a transport plane 501e in the vacuum processing chamber 502 ; a magnetron cathode 102 or a magnetron arrangement 100 for coating one in the transport plane 501e transported substrate 520 ,

Furthermore, the processing arrangement 500 A gas supply arrangement analogous to that described above 108 with at least a first gas inlet 108a comprise for providing a first gas 110a (For example, a reactive gas) in a plasma region 501P (Reaction region 501P ) between the magnetron cathode 102 and the transport level 501e , In this case, the gas supply arrangement 108 be set up or be, the at least one first gas inlet 108a to control or regulate so that the reactive gas 110a in the plasma area 501P is introduced. Furthermore, the gas supply arrangement 108 , analogous to the previously described, at least one second gas inlet 108b for providing an inert gas in the reverse regions 106k of the race track 106 , In this case, the gas supply arrangement 108 be set up or be the at least one second gas inlet 108b to control or regulate such that the inert gas 110b the reversal areas 106k flushes.

According to various embodiments, the processing arrangement 500 a transport device for transporting the substrate 520 in the transport plane 501e in the coating room 501b or in the coating area 501b exhibit.

Furthermore, the vacuum processing chamber 502 an inlet (a first lock) and an outlet (a second lock) such that the substrate 520 in the vacuum processing chamber 502 into and out of the vacuum processing chamber 502 can be transported out or that the substrate 520 through the vacuum processing chamber 502 can be transported through.

According to various embodiments, a vacuum pump assembly (not shown) may be provided with the vacuum processing chamber 502 be coupled such that the vacuum processing chamber 502 can be evacuated by the vacuum pump assembly. Thus, for example, in the vacuum processing chamber 502 be provided a process pressure of less than 0.1 mbar or less than 0.01 mbar, so that the magnetron arrangement 100 can be operated.

According to various embodiments, by means of the processing arrangement 500 a controlled reactive sputtering process is performed, the processing arrangement 500 to have at least one rule. The processing arrangement 500 can be a sputtering process chamber 502 with at least one magnetron cathode 102k (a target 102k ), wherein the sputtering process chamber 502 and the magnetron cathode 102k may be configured such that within the sputtering process chamber 502 a plasma can be provided, eg for coating a substrate 520 within the sputtering process chamber 502 , In this case, the magnetron cathode 102k with a generator and an anode (which, for example, a positive electrical potential with respect to the magnetron cathode 102k ) may be coupled (eg be electrically conductively connected). By means of the generator can be connected to the magnetron cathode 102k or between the magnetron cathode 102k and an electric field for generating the plasma may be provided to the anode, eg according to a voltage U as a generator size. Furthermore, the processing arrangement 500 at least one magnet arrangement 102m (a magnet system 102m ) for magnetron sputtering (not in 5A shown, cf. for example 2A and 3A ). Furthermore, the processing arrangement 500 a vacuum pump arrangement (not shown), so that within the sputtering process chamber 502 a vacuum (eg a high vacuum) can be provided. Furthermore, the sputtering process chamber 502 also several targets 102k (several magnetron cathodes 102k ), which may be appropriately set up and regulated, as herein for a target, for example 102k (or for a magnetron cathode 102k ) is described.

According to various embodiments, a processing arrangement 500 (a sputtering arrangement) as described herein, having one or more vacuum chambers, at least one of the vacuum chambers having a sputtering process chamber 502 can be. For example, the processing arrangement 500 be configured as a so-called batch coating machine, in which substrates can be successively coated batch by batch. Furthermore, the processing arrangement 500 be configured as a so-called in-line coating system, wherein a substrate (eg plate-shaped substrates or a plurality of plate-shaped substrates by means of substrate carriers as a so-called endless substrate) can be passed through a plurality of vacuum chambers (or compartments) on a transport system. In this case, the substrate by means of at least a lock chamber in the processing arrangement 500 introduced and / or from the processing arrangement 500 be brought out. Furthermore, the processing arrangement 500 be configured as a so-called air-to-air coating system or as a belt coater, wherein the substrate 120 for example, roll-to-roll through the at least one sputtering process chamber 502 can be transported through.

A processing arrangement 500 For performing a cathode sputtering process (sputtering process), for example, at least one sputtering process chamber 502 and at least one magnetron 102 with at least one magnetron cathode 102k have, during the sputtering process material (target material) from the magnetron cathode 102k is atomized and where the atomized material 512 in one direction from the magnetron 102 spreads away. The area on the magnetron cathode 102k , in which the atomized material spreads, may be referred to as a processing area or processing room, wherein the atomized material 512 from the plasma area 501P to the coating area 501b spreads. This can be done in the extended sections of the race track 106 atomized material 512 in the plasma area 501P or on the way to the substrate to be coated in the coating area 501b with the means of the first gas inlet 108a initiated reactive gas 110a react chemically.

During a sputtering process, in the plasma region 501P be provided a plasma, for example by means of the magnetron cathode 102k an electric field is provided, wherein the provided electric field extends at least partially into the processing area. By means of the plasma, the magnetron cathode 102k be atomized (eg due to the ion bombardment of the magnetron cathode 102k with the ions formed in the plasma). For generating the plasma, at least one working gas (eg argon or another noble gas or a gas suitable as working gas) may be present in the sputtering process chamber 502 to be provided. Furthermore, at least one reactive gas can be used for reactive sputtering 110a in the sputtering process chamber 502 to be provided. The process gases used for sputtering (one working gas or more working gases and one reactive gas or more reactive gases) can each by means of a gas supply 108a . 108b or by means of further gas feeds into the sputtering process chamber 502 can be introduced, the introduction can be done regulated.

By adjusting the magnet system can be a predefined shape and / or size of the race track 106 and thus the plasma generated, and / or the geometry of the race track 106 generated plasma are influenced. For example, the magnets of the magnet assembly may be or may be arranged relative to one another such that an elongated (longitudinally extending) race track 106 arises. Such a longitudinally extending race track 106 For example, it may have a length in a range of about several centimeters to about several meters, for example, in a range of about 1 meter to about 4 meters.

In general, the processing arrangement 500 or a similar processing arrangement 500 be operated in a variety of different operating modes, for example in the so-called DC mode (DC sputtering), in AC mode (AC sputtering, such as MF sputtering or RF sputtering), in pulsed mode (high-energy pulse). Magnetron sputtering), with unipolar or bipolar pulsed discharge, both with one electrode and with multiple electrodes (cathodes and / or anodes).

As further in 5B is shown in a schematic view, the first gas 110a by means of a plurality of first gas inlets, for example by means of a segmented gas channel 108 or by means of several segmented gas channels 108 into the sputtering process chamber 502 be initiated to supply the magnetron 102 with a reactive gas, a reactive gas mixture or a process gas having at least one working gas and at least one reactive gas.

According to various embodiments, the first gas 110a (Eg, the working gas and / or the reactive gas) such as the processing area between the magnetron 102 and the coating area 501b be supplied, that a predefined spatial density distribution of the first gas 110a or the constituents of the first gas 110a is produced. One possibility is, for example, the distribution, the flow field, the concentration field, and / or the chemical composition of the first gas 110a in the processing area (eg in the plasma area 501P ) and adapt to the appropriate conditions, leaving one on the substrate 520 deposited layer has a uniform as possible layer property profile.

For example, along the elongated area 106g of the race track one or more gas supplies 108 (or gas ducts) can be arranged or, by means of which a distribution of the first gas 110a can be changed or adapted in the processing area. Furthermore, the chemical composition of the first gas 110a , each with a can be initiated regulated corresponding gas supply, for example by means of a mass flow controller, by means of a control valve or by means of several control valves (or the like) adapted or changed. In other words, when introducing the first gas 110a in the processing area the flow of the first gas 110a or in each case the flow of the individual components of the first gas 110a be changed or adapted. In this case, the gas supply of the individual gases (constituents) of the first gas mixture 110a through the gas supplies 108 through separated from each other.

According to various embodiments, the plasma properties (eg, the chemical composition of the plasma, the plasma density, the temperature of the plasma, or the like) may vary throughout the plasma region 501P or each in different areas of the plasma area 501P be determined or analyzed, and this can be taken into account in the control or regulation of gas supplies.

According to various embodiments, plasma properties can be determined, for example, by means of spectroscopy (eg optical emission spectroscopy (OES)), for example based on an analysis of emission lines and / or absorption lines of the plasma. For example, one or more optical sensors (eg spectrometers, eg comprising a collimator or an optical element, for example a lens or a mirror) can be used for this purpose. For example, the optical sensor or the plurality of optical sensors may be relative to the plasma region 501P be arranged and / or aligned such that based on an emission of the plasma, for example, plasma properties in a region of the plasma or in different areas of the plasma can be determined and thus be taken into account in the control or regulation of gas supply. Illustratively, the analysis of the emission can provide conclusions about the plasma properties in a local area.

Furthermore, by means of a pressure-measuring arrangement or by means of a partial pressure measuring arrangement, the partial pressures of the plurality of reactive gases (or of the working gas) in the sputtering process chamber 502 be determined so that the partial pressures and / or the partial pressure ratio of the multiple reactive gases can be used in the scheme. Furthermore, determined spectra or measured values (eg partial pressure measured values) of different gases can also be set in relation to one another, for example in order to compensate for systematic measurement errors.

Furthermore, during a reactive sputtering process at least components of a supplied reactive gas 110a or the supplied reactive gas 110a attach in at least one area of the target (eg on the target surface). As a result, the target surface can, for example, be changed (for example oxidized), wherein these changed regions can be partially atomized again in the sputtering process. The sputtering rate of the altered regions may, for example, be dependent on the plasma properties and / or the material properties of the material in the changed region. In the areas of the target in which no or not enough material is atomized, electrically insulating material can accumulate permanently.

The formation of the modified regions can be dependent, for example, on the partial pressure of the reactive gas, wherein the partial pressure of the reactive gas can be regulated or adjusted, for example, by means of the inflow of reactive gas. Due to a chemical reaction of the reactive gas with the target material (with the magnetron cathode 102k ), the sputtering process can be operated in the so-called oxidic mode and in the so-called metallic mode. The covering of the magnetron cathode 102k with an oxidic material (or generally with electrically insulating material) may be dependent on the partial pressure of the reactive gas.

According to various embodiments, the requirements for the layer properties of the layer to be deposited or the requirements on the coating rates (deposition rate) may require that the sputtering process be operated in the transition region between the metallic mode and the oxide mode (or in another transition region between the metallic mode and the insulating mode), so that this a priori unstable operating state should be stabilized by means of regulation. One can distinguish between short-term stability (preventing short-term tilting of the operating point due to the a priori unstable transition region) and long-term stability (compensating for slow drift of the operating point, e.g., when the target is burning), as well as, for example, balancing local influences. This stability of operation may be necessary for production. For the transverse distribution control (process gas distribution transversely to the substrate transport direction), an alignment of emission line intensities of the plasma along the longitudinal extent of the target can take place.

According to various embodiments, the processing arrangement 500 be set up so that the first gas inlet 108a and the second gas inlet 108b substantially parallel to the magnetron cathode 102k extend, so that's the reversal areas 106k of the race track with inert gas 110b be flushed and that between the reversal areas 106k of the race track can be done by means of the first gas, a reactive sputtering process. The gas inlets can 108a . 108b be segmented, for example, in up to five segments or in more than five segments, for example, depending on how accurate the distribution of the process gas in the plasma region 501P should be set. Furthermore, the first gas inlet 108a and / or the second gas inlet 108b (the gas supply) can also be arranged angled or bent, so that the reactive gas 110a and / or the inert gas 110b can be provided from different directions.

According to various embodiments, the first gas inlet 108a multiple feeds or multiple separate gas channels 108 or a segmented gas channel 108 or multiple segmented gas channels 108 exhibit. According to various embodiments, the second gas inlet 108b have multiple feeds. According to various embodiments, for example, a plurality of first segments 108a a segmented gas channel 108 for introducing the first gas 110a be used and in each case at the end portions of the segmented gas channel 108 provided second segments 108b for introducing the second gas 110b ,

This can be the gas channels 108 on both sides of the magnetron cathode 102k be arranged. In this case, the multiple segmented gas channels 108 essentially parallel to the magnetron cathode 102k be arranged. Thus, for example, the magnetron cathode 102k optimal with process gas 110a be supplied, or the distribution of the process gas 110a in the sputtering process chamber 502 can be optimally adjusted, and further, the edge regions of the magnetron cathode 102k or the race track reversal 106k with inert gas 110b be rinsed.

The segmented gas channels 108 may be substantially parallel (with a maximum deviation of ± 10 ° or ± 5 ° from a parallel orientation) to the longitudinal extent of the magnetron cathode 102k be arranged. In this case, the magnetron cathode 102k as well as the gas channels 108 have a length in a range of about 1 m to about 5 m.

According to various embodiments, the flow (a flowing gas quantity (number of particles or gas mass) per unit time) of the reactive gas 110a through the first gas inlet 108a throughout a range from about one standard cubic centimeter per minute (sccm) to about a few hundred standard cubic centimeters per minute, or, for example, in a range of less than about 1 sccm or greater than about 1000 sccm. Furthermore, the flow of inert gas 110b through the second gas inlet 108b throughout a range from about one standard cubic centimeter per minute (sccm) to about a few hundred standard cubic centimeters per minute, or, for example, in a range of less than about 1 sccm or greater than about 1000 sccm.

According to various embodiments, locally different plasma conditions and thus a locally different reactive gas consumption can be taken into account in the regulation of the reactive sputtering process and the required partial pressure of more than one reactive gas used can be set or adjusted locally. In order to be able to adjust the reactive gas partial pressure locally fine enough (according to a required spatial resolution), a segmented gas channel may be used, as described herein. In this case, a plurality of reactive gas channels may also be arranged on both sides of the one or on both sides of the plurality of targets, around the elongated race track areas burning with different stoichiometry 106g Take into account these differences in stoichiometry. For example, argon can be used as the working gas or else (for example additionally) another inert gas such as krypton or helium or a mixture of inert gases. The control of adjusting the reactive gas flows 110a can be localized using optical emission spectroscopy (OES). From various (emission) lines of the plasma of the layer-forming material and the process gas (eg lines of elements of all gases can be considered or used), for example, control parameters can be derived, which can be used to set the reactive gas and working gas flows.

According to various embodiments, additional working gas can be provided by means of a further gas supply.

According to various embodiments, the magnetron arrangement 100 or the processing arrangement 200 be set up so that in the reverse areas 106k of the race track 106 sputtered metallic or semi-metallic, and then in the elongated area 106g of the race track 106 sputtered reactively. If on the substrate to be coated 520 Only the reaction products of the reactive sputtered target material should condense, the reverse regions 106k of the race track 106 be shielded by a diaphragm structure, as described below.

In 6 is a processing arrangement 200 , Analogously to the above described, shown in a schematic cross-sectional view. In this case, the processing arrangement 200 in addition to the magnetron arrangement 100 for coating the substrate 520 , which by means of a transport device 610 in a transport plane 501e is transported, a diaphragm structure 620 (a so-called shield 620 ) exhibit.

The aperture structure 620 can, for example, between the magnetron 102 and the transport level 501e extend. Furthermore, the diaphragm structure 620 for example, between the magnetron cathode 102k the magnetron 102 and the transport level 501e extend. Furthermore, the diaphragm structure 620 for example, between the race track or the magnet arrangement 102m and the transport level 501e extend. By means of the diaphragm structure 620 can reverse the race track 106k the magnetron 102 be shielded or that they are not used to coat the substrate 520 in the transport plane 501e contribute. This can be the length of the magnetron cathode 102k (in the direction 101 ) be greater than the width (in the direction 101 ) of the substrate to be coated 520 so that the axial end sections (the race track reversal 106k ) of the magnetron cathode 102k not for coating the substrate 520 can be used.

Furthermore, that of the aperture structure 620 provided aperture 620o on the width of the substrate to be coated 520 be adjusted. Clearly, the aperture structure 620 be arranged and arranged such that atomized material from the two longitudinally extended areas 106g of the race track 106 (the plasma formation area) toward the substrate to be coated 520 can spread and that spreading of sputtered material from the two reversal areas 106k of the race track 106 (the plasma formation area) toward the substrate to be coated 520 by means of the diaphragm structure 620 is prevented.

Furthermore, that of the aperture structure 620 provided aperture 620o on the width of the substrate to be coated 520 be adapted, such as in 7A and 7B in a top view of the race track 106 the magnetron 102 and on the aperture structure 620 is illustrated. Furthermore, the aperture can 620o have a width which is smaller than the length of the magnetron cathode 102k or as the length of the race track 106 (in the direction 101 ). According to various embodiments, the diaphragm structure 620 a sheet with at least one aperture 620o have or more sheets, which together the aperture 620o form. Thus, this can happen in the longitudinally extended areas 106g of the plasma formation region 106 atomized material through the aperture 620o through in the direction of the substrate to be coated 520 spread.

According to various embodiments, the diaphragm structure 620 in perpendicular projection onto the magnetron cathode 102k the edge regions of the magnetron cathode 102k and / or the inert gas-puffed race-track reversals 106k cover. The supernatant (in the direction 101 ) of the diaphragm structure 620 about the race track 106 the magnetron cathode 102k may for example be more than 10 cm, for example more than 20 cm. In this case, the loss of coating width in the transport plane (or in the coating space 501b ) due to the improved process control (eg due to the avoidance of particle contamination on the substrate).

According to various embodiments, a magnetron arrangement 100 Comprising: a magnetron cathode 102k with a material to be atomized; a magnet arrangement 102m which is arranged relative to the magnetron cathode such that above the material to be sputtered, a plasma forming region 106 is provided, wherein the plasma formation region has two longitudinal areas 106g and two reverse regions annularly connecting the longitudinally extending portions 106k having; a gas supply arrangement 108 with at least a first gas inlet 108a and at least one second gas inlet 108b , wherein the gas supply arrangement 108 is set up, the two elongated areas 106g the plasma formation region by means of the at least one first gas inlet 108a with a reactive gas 110a to provide, and the two reversal areas 106k the plasma formation region by means of the at least one second gas inlet 108b with an inert gas 110b to flush so that in the two reverse areas 106k of the plasma formation region essentially only the inert gas 110b is available.

Claims (14)

Magnetron arrangement ( 100 ), comprising: a magnetron cathode ( 102k ) with a material to be atomized; A magnet arrangement ( 102m ) which is arranged relative to the magnetron cathode in such a way that above the material to be sputtered a plasma formation region ( 106 ), wherein the plasma formation region comprises two longitudinal regions ( 106g ) and two of the elongated areas annularly connecting reverse regions ( 106k ) having; A gas supply arrangement ( 108 ) with at least one first gas inlet ( 108a ) and at least one second gas inlet ( 108b ), Wherein the gas supply arrangement ( 108 ), the two longitudinal areas ( 106g ) of the plasma formation region by means of the at least one first gas inlet ( 108a ) with a reactive gas ( 110a ), and the two reverse areas ( 106k ) of the plasma formation region by means of the at least one second gas inlet ( 108b ) with an inert gas ( 110b ) in such a way that in the two reverse regions ( 106k ) of the plasma formation region essentially only the inert gas ( 110b ) is available. Magnetron arrangement according to claim 1, wherein the magnetron cathode is formed as a tubular cathode, and wherein the magnet arrangement ( 102m ) is disposed within the tube cathode. Magnetron arrangement according to claim 1, wherein the magnetron cathode is formed as a planar cathode, and wherein the magnet arrangement ( 102m ) on the plasma forming area ( 106 ) opposite side of the planar cathode is arranged. A magnetron assembly according to claim 1, further comprising: a further magnetron cathode ( 102k ), wherein the magnetron cathode and the further magnetron cathode are arranged together as a double-tube cathode or double planar cathode. Magnetron arrangement according to one of claims 1 to 4, wherein the gas supply arrangement ( 108 ) is set up such that in the two reverse regions ( 106k ) of the plasma formation region more than 90 at% inert gas ( 110b ) available. Magnetron arrangement according to one of claims 1 to 5, wherein the gas supply arrangement ( 108 ) further comprises at least one further gas inlet for supplying at least the two longitudinally extending regions ( 106g ) of the plasma formation region ( 106 ) with a working gas. A magnetron assembly according to any one of claims 1 to 6, wherein said means for exposing said at least one second gas inlet ( 108b ) embedded inert gas ( 110b ) as working gas in the two reverse regions ( 106k ) of the plasma formation region ( 106 ), so that in the two longitudinal areas ( 106g ) reactive and in the two reverse regions ( 106k ) is sputtered non-reactive. Processing arrangement ( 200 ), comprising: a process chamber ( 502 ) with at least one coating space ( 501b ) within the process chamber; and a magnetron arrangement ( 100 ) according to one of claims 1 to 7 for coating a substrate ( 520 ) in the coating room. The processing assembly of claim 8, further comprising: an aperture structure ( 620 ), which is arranged and arranged such that atomized material from the two longitudinally extending areas ( 106g ) of the plasma formation region ( 106 ) in the direction of the substrate to be coated ( 520 ) and that spreading of atomized material from the two reverse regions ( 106k ) of the plasma formation region ( 106 ) in the direction of the substrate to be coated ( 520 ) by means of the diaphragm structure ( 620 ) is prevented. A processing arrangement according to claim 8 or 9, further comprising: a transport device ( 610 ) for transporting the substrate to be coated ( 520 ) in a transport plane ( 501e ) in the coating space, wherein the diaphragm structure ( 620 ) between the transport plane ( 501e ) and the two reverse regions ( 106k ) of the plasma formation region ( 106 ) is extended. Processing arrangement according to claim 9 or 10, wherein the diaphragm structure ( 620 ) a passage opening ( 620o ), through which the in the longitudinally extending areas ( 106g ) of the plasma formation region ( 106 ) atomized material in the direction of the substrate to be coated ( 520 ) ( 512 ) can. A method of reactive sputtering, the method comprising: • generating a plasma over a surface to be sputtered ( 102 o ) in a plasma forming area ( 106 ), wherein the plasma formation region comprises two longitudinal regions ( 106g ) and two reversal regions connecting the longitudinal regions ( 106k ) having; • supplying the elongated areas ( 106g ) with a first gas ( 110a ) which has at least one reactive gas; and • supplying the two reverse regions ( 106k ) with a second gas ( 110b ), which has more than 50 at% inert gas. Method according to claim 12, wherein the second gas ( 110b ) has more than 90 at% inert gas. A method of reactive sputtering, the method comprising: • generating a plasma over a surface to be sputtered ( 102 o ) in a plasma forming area ( 106 ), wherein the plasma formation region comprises two longitudinal regions ( 106g ) and two the Inverted regions connecting longitudinal regions ( 106k ) having; • supplying the elongated areas ( 106g ) with a process gas ( 110a ), the process gas ( 110a ) has at least one reactive gas, so that in the two longitudinally extending regions ( 106g ) is sputtered reactive; and • supplying the reversal areas ( 106k ) essentially only with inert gas ( 110b ) such that the reactive gas is used to supply the two longitudinally extending regions ( 106g ) of the two reverse regions ( 160k ) is kept away, so that in the two reverse regions ( 106k ) is sputtered non-reactive.

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