DE102013221991A1 - Electro-optic, organic semiconductor device with spaced-apart electrodes - Google Patents

Abstract

An electro-optic organic semiconductor device includes a photoactive layer or layers (130, 140) having at least one organic material, the photoactive layer or layers (130, 140) having a first major surface, a second major surface, and a rim (136). The edge connects the first main surface and the second main surface with each other. The semiconductor device also includes a first electrode (110) disposed on the first major surface and a second electrode (180) disposed on the second major surface and extending within at least one edge region (138) of the rim (136) extends the edge (136) or beyond. The first electrode (110) is spaced from the at least one edge region (138).

Description

Embodiments of the present invention relate to an electro-optical, organic semiconductor device, in particular an organic light emitting diode (OLED) or an organic photodiode (OPD). Further embodiments of the present invention relate to a method for producing an electro-optical, organic semiconductor device. Further embodiments relate to microstructured organic electronic systems, in particular but not exclusively for integration into optical systems for illumination, signal generation, signal detection and alignment of different systems or objects to each other. The present invention may also be used to fabricate non-optically active devices, such as organic semiconductor integrated circuits.

Organic light-emitting diodes (OLEDs) have received much interest both in lighting and as a novel display technology and have opened up important markets. The potentially high efficiency, the achievable color space and the possible very thin design contribute to this.

• – Sie erfordert extra Prozessschritte zur Strukturierung (Lithographie, Spincoating, Ausbacken, usw.)
• – Da eine Passivierung in der Regel die zu passivierenden (d. h. isolierenden) Schichten (wie z. B. Elektroden) vollständig überdecken muss, ist die aktive Leuchtfläche durch die Passivierung in der Größe beschränkt, da eine Überlappung zwangsläufig eine größere Fläche der Passivierung als die zu passivierende Schicht hervorruft. Bei Mikrostrukturen ist die maximale Bauform zumeist vorgegeben, weshalb solche Überlappungsbereiche die späteren nutzbaren aktiven Bauelemente in der Fläche verkleinert.
• – Die Passivierung sind meist Lacke/Polymere, welche ausgasen können (z. B. Reste von Lösungsmitteln, Synthesereste und Wasser/Sauerstoff) und dadurch die OLED zerstören (welche durch diese Stoffe degradiert)
• – Die Passivierungsschichten sind meist semi-/transparent, wobei die passivierten/überdeckten Elektroden zumeist aus opakem Metall bestehen → durch den Überlapp der Passivierung zu den Elektroden, führt die Passivierung zu einer optisch schlechteren Kante der Elektrode, da die Passivierung bei einer Vergrößerungsoptik noch wahrgenommen werden kann. Die Schichtdickenabnahme der Passivierung führt zu einem unscharfen Übergang zwischen transparentem Hintergrund und opaker Elektrode, was den optischen Eindruck der Mikrostruktur bei vergrößerter Betrachtung in der Qualität verringert.
• – Passivierungen sind typisch > 1 μm dick, weshalb bei der Verkapselung der OLED mit typ. 100–300 nm Dicke ein Problem bzgl. Schichtspannung des Verkapselungsklebers auftreten kann und auch Lufteinschlüsse bzw. inhomogene Kleberverteilung zu optisch nicht akzeptablen Inhomogenitäten führen kann.

Currently, the use of passivation layers for structuring the later active luminous area and the electrical isolation (isolation) of the electrodes is common and is used in the display and lighting industry. Disadvantages of this passivation are:

• - It requires extra process steps for structuring (lithography, spincoating, baking, etc.)
• Since passivation generally has to completely cover the passivation (ie insulating) layers (such as electrodes), the active luminous area is limited in size due to the passivation since an overlap inevitably leads to a larger passivation area than the passivation causes to passivierende layer. In microstructures, the maximum design is usually predetermined, which is why such overlapping areas reduce the later usable active components in the area.
• - The passivation are usually paints / polymers, which can outgas (eg residues of solvents, synthesis residues and water / oxygen) and thereby destroy the OLED (which degrades by these substances)
• - The passivation layers are usually semi / transparent, with the passivated / covered electrodes mostly made of opaque metal → by the overlap of the passivation to the electrodes, the passivation leads to a visually worse edge of the electrode, since the passivation still perceived in a magnifying optics can be. The reduction in the layer thickness of the passivation leads to a fuzzy transition between the transparent background and the opaque electrode, which reduces the optical impression of the microstructure with increased consideration in terms of quality.
• - Passivations are typically> 1 micron thick, so when encapsulating the OLED with typ. 100-300 nm thickness may have a problem regarding. Layer stress of the encapsulation adhesive and also air inclusions or inhomogeneous adhesive distribution can lead to optically unacceptable inhomogeneities.

In addition to the organic light-emitting diodes mentioned in principle the same applies in principle for organic photodiodes (OPD, English "organic photo diode"), the broad spectral absorption of UV (ultraviolet) to NIR (near infrared) is an advantage of organic photodiodes, as well the cost-effective structurability to any shapes.

Currently, light-emitting reading / positioning devices are realized, for example, in that an LED is irradiated into the transparent carrier substrate (eg glass / quartz) and only at scattering elements within the carrier glass the light is then coupled out to the user / observer. Alternatively, interference effects can also be used to decouple light within the carrier glass into specific angles to the user. In both methods (scattering element within the carrier glass or use of interference effects) there is the disadvantage that the LED has a very low light extraction efficiency to the user and thus must be operated at very high luminance to provide an acceptable luminance for the user. Another, possibly larger disadvantage is that the luminous dots are not separately controlled or colorable. For example, the representation of variable numbers, z. B. 7-segment displays, with the side LED Lichteinkopplung not feasible.

The patent DE 100 49 024 B4 describes an OLED reticule using elaborate patterning technologies. Since OLED reticles have traditionally been produced by evaporation of the organic material (ie, the organic layer or layer sequence) by means of shadow masks, the use of passivation layers has been absolutely necessary for the following technical reasons. The shadow masks for the organics are typically produced by means of etching or laser structuring and have strongly rounded corners in the micrometer range, since for shadow masks the etching / laser can not be precisely controlled in the sub-micron range. Thus these strong roundings of the openings of the Shadow masks not too rounded edges at z. For example, if triangular / quadrilateral structures are used, the current technology uses passivation (which is easily controllable in the sub-micron range) to produce extremely precise edges / corners. For this reason, the use of passivation in OLED microstructures has heretofore been a necessity if precise structures are to be generated.

1 shows a schematic sectional view of an optical device according to the prior art, which in the patent DE 100 49 024 B4 is shown. Accordingly, it is on a transparent carrier substrate 1 , in particular carrier glass, a transparent or semitransparent electrically conductive first electrode 2 over the entire surface or on partial surfaces of the carrier substrate 1 applied. This first electrode 2 or anode in the form of a thin layer consists for example of inorganic materials such as metal or metal oxides. On this first electrode 2 or on masked portions thereof is a conductive organic, electroluminescent-prone material 3 applied. Such a material 3 For example, PPV (poly (p-phenylene-vinylene)) has the property when emitting an electrical voltage to emit light quantum. The necessary electrical energy is transmitted via a second electrode 5 fed, which is quasi a cathode and which consists of metal, metal alloys or other materials. For isolation between first and second electrode 2 / 5 becomes an insulating layer 4 In addition to the protection of the layer package, one or more transparent protective layers are used 6 or a Glasabdeckplatte applied. Radiation or light exits in the direction A (through the semitransparent electrode on the carrier substrate) and is perceived by the viewer B.

2 is a schematic representation of a plan view of an OLED lighting structure according to the prior art of the patent DE 100 49 024 B4 (not identical to the one in 1 shown structure). You can see the OLED or the organic layer / layer sequence 3 and the metallization 2 , The bright stripe between OLED 3 and metallization 2 is the passivation 4 , You can see in 2 quite clearly the passivation 4 and the associated loss of active area. You can also see the blurring of the edges due to the passivation 4 , The edges of the metallization 2 (lithographically structured metal) are clearly sharper delimited or to recognize.

Furthermore, the company Burris Optics with the product "Eliminator" already has an OLED-based product on the market, which, however, has only a low transparency, disturbing leads and simple functionality. Passivation layers are used in the existing product to structure the OLED and its activation.

The current state of the art of OPD is essentially in the review article of M. Caironi, Y. -Y. Noh et al., Adv. Mater. 2013, 25, 4267-4295 , described.

The present invention is thus based, for example, on the object of providing electro-optical or purely electrical, organic semiconductor components which can be manufactured using a simplified production method and which allow a larger functionally usable area (eg light area in OLEDs) than the previous version of the technique. Other possible tasks include improving efficiency and efficiency, as well as precise structuring.

This object is achieved by an electro-optical, organic semiconductor component according to claim 1 or by a method for producing an electro-optical, organic semiconductor device according to claim 10.

Exemplary embodiments of the present invention provide an electro-optical, organic semiconductor component which comprises a photoactive layer or layer sequence, a first electrode and a second electrode. The photoactive layer or layer sequence comprises at least one organic material. The photoactive layer or layer sequence further comprises a first major surface, a second major surface, and an edge. The edge connects the first main surface and the second main surface with each other. The first electrode is disposed on the first main surface. The second electrode is disposed on the second major surface and extends within at least one edge portion of the edge to the edge or beyond. The first electrode is spaced from at least one edge region.

Further embodiments of the present invention provide a method of manufacturing an electro-optic organic semiconductor device. The method comprises providing a substrate having a first electrode and a photoactive layer or layer sequence at least partially covering the first electrode on a first main surface of the substrate. The method further comprises coating the substrate with an electrically conductive material and patterning the electrically conductive material such that the remaining electrically conductive material extends within at least one edge region of an edge of the photoactive layer to the edge or beyond, the at least one edge region is spaced from the first electrode.

The present invention is based on the finding that the function of an electrical insulation between the first electrode and the second electrode can be taken over by the photoactive layer or layer sequence if the photoactive layer or layer sequence ensures a sufficient distance between the first and the second electrode to prevent unwanted contact of the two electrodes. The customary passivations currently used would in this case force a reduction of the active component surfaces (in this case luminous surfaces) and thus be disadvantageous for the possible maximum brightness of the component. The present invention is also based on the recognition that an active region (for example the luminous region of an OLED) can also be defined by the geometrical intersection of the first electrode, the second electrode and the photoactive layer / layer sequence. Therefore, a precise and optically clear design of the luminous region of an OLED can be achieved by the lithographic design of the electrodes, for example, whereas the structuring of the photoactive layer can be carried out with reduced precision (ie, although by means of lithography, but a less expensive optic or Device), which makes the production easier and cheaper. In accordance with at least some embodiments, in this way the first electrode and the second electrode are electrically isolated from one another by means of the photoactive layer or layer sequence.

The edge may have an edge surface and the second electrode may extend along at least one edge region along the edge surface.

The second electrode may include a first planar portion extending in a plane of the first major surface of the photoactive layer or layer sequence.

The second electrode may further comprise a second areal portion on the second major surface of the photoactive layer or layer sequence. A connecting portion may be provided between the first sheet portion and the second sheet portion. The connecting portion may extend along the at least one edge region of the edge surface.

The electro-optical organic semiconductor device may further comprise a substrate, wherein the first electrode is disposed on a first major surface of the substrate, and wherein the photoactive layer or layer sequence is also disposed on the first major surface of the substrate and at least partially overlaps the first electrode.

The electro-optic, organic semiconductor device may further comprise a contacting surface disposed on the first major surface of the substrate spaced from the first electrode, the second electrode extending beyond the edge to the contacting surface and at least partially overlapping it.

The second electrode may comprise a deposited and photolithographed or vapor deposited conductive material.

The electro-optical organic semiconductor device may be an organic light emitting diode (OLED) or an organic photodiode (OPD).

The photoactive layer or layer sequence may have an area of at most 4 mm ² , preferably of at most 1 mm ² , more preferably of at most 0.5 mm ² , even more preferably of at most 0.1 mm ² .

Embodiments of the present invention will be explained with reference to the accompanying figures. Show it:

1 a schematic sectional view of an optical device according to the prior art;

2 Representation of a plan view of an OLED lighting structure according to the prior art;

3A - 3D schematic plan views of an electro-optic organic semiconductor structure according to embodiments, wherein the plan views, for example, show different stages during the production of the semiconductor structure;

4A - 4K a process flow of a manufacturing process according to at least one embodiment with reference to schematic cross-sectional views;

5A a schematic perspective view of an electro-optical organic semiconductor device according to at least one embodiment;

5B a schematic plan view of the electro-optical organic semiconductor device of 5A ; and

6 a schematic cross-sectional view of an electro-optical organic semiconductor device according to at least one further embodiment.

In the following description of the embodiments of the invention, the same or equivalent elements are provided with the same reference numerals in the figures, so that their description in the different embodiments is interchangeable.

• – Die Prozessschritte zum Auftragen der Passivierung entfallen (somit günstigerer und schnellerer Prozessfluss/weniger potentielle Produktionsfehler → Ausbeuteerhöhung)
• – Die aktive Fläche wird maximiert (da keine Passivierungsverluste entstehen), weshalb ein größerer Lichtstrom bei Leuchtmitteln oder größerer Strom bei rein elektrischen Bauelementen resultiert und eine größere Lebensdauer bzw. andere vorteilhafte Eigenschaften ermöglicht.
• – Da keine Passivierung vorhanden ist, werden keine Schichten eingebaut, welche langfristig ausgasen und die OLED/OPD degradieren
• – Die opaken Elektroden sind nicht von einer semitransparenten Passivierung bedeckt, so dass die Elektroden eine äußerst scharfe/genaue Kante erzeugen, welche nur durch lithographische Prozesse begrenzt sind (derzeit unübertroffene Strukturierungstechnik)
• – Bei der Verkapselung der OLED/OPD mit Adhäsiv ergeben sich keine internen Verspannungen/Gaseinschlüsse/Inhomogenitäten durch zu große Höhenunterschiede (da keine umliegende Schicht größer ist als die OLED/OPD)

The approach described here describes a new way to fabricate electro-optic or all-electric, organic semiconductor devices (eg, OLED / OPD reticles, positioning and reading devices, circuits, and logic) by using the passivation within the organic semiconductor device (eg, reticle / OLED / OPD) and thereby achieves the following advantages:

• - The process steps for applying the passivation are eliminated (thus more favorable and faster process flow / less potential production errors → yield increase)
• - The active area is maximized (since no Passivierungsverluste arise), which is why a larger luminous flux results in lamps or larger power in purely electrical components and allows a longer life or other advantageous properties.
• - Since no passivation is present, no layers are built in, which outgas long term and degrade the OLED / OPD
• The opaque electrodes are not covered by a semitransparent passivation, so that the electrodes produce an extremely sharp / precise edge, which are limited only by lithographic processes (currently unsurpassed structuring technique)
• - When encapsulating the OLED / OPD with adhesive, there are no internal distortions / gas inclusions / inhomogeneities due to excessive differences in height (since no surrounding layer is larger than the OLED / OPD)

This new approach of OLED / OPD structuring can be achieved by lithographic structuring of the OLED / OPD or by using shadow masks (but here mostly with rounded or larger structures).

The aim of the technical teaching described herein is to apply a microstructured OLED, thereby achieving a higher light output, production efficiency, service life and reduced probability of failure. With regard to the OPD, microstructured OPDs and OPD arrays can be realized in a highly transparent environment, read out separately and, if required, combined with an OLED / LED display.

The approach described below of structuring OLEDs can essentially also be used for OPDs or purely electrical components. Whether the final component emits, absorbs, or both may not be decisive for the aspects of the design of interest here. In the context of the present description and the claims, an electro-optical component is understood to be a light-emitting component, a light-detecting component or a component which both emits and detects light. Pure electrical components here are, for example, transistors or memory. In an analogous manner, the photoactive layer or layer sequence may be suitable for emission and / or detection of light. The light emitted / detected by the proposed electro-optical organic semiconductor device can range in a wavelength range from far-infrared (FIR) to far-ultraviolet (UV-C or FUV) and in particular also in the visible range from about 400 nm to about 750 lie.

The use of a passivation layer is dispensed with in the technical teaching described here, although the geometry of the electrodes is limited (see the approach described below).

In currently conventional OLEDs, the passivation typically prevents the direct contact (= short circuit) of the anode and cathode of the OLED. If the passivation is omitted in the procedure presented here, the electrodes are thus open and must not come into contact with each other. Therefore, the anode is realized in such a way that the organics clearly overlap the anode on at least one side. The cathode clearly overlaps both the anode and the organics on at least one side (the order or assignment of the electrodes is interchangeable). This is in the 3A to 3D shown. According to some embodiments, the anode may be most realized. Furthermore, according to embodiments, the cathode can be realized significantly smaller than the anode and the organics and clearly overlap both the anode and the organics on at least one side.

3A shows a schematic plan view of an anode or first electrode 110 and to a contacting area 120 for a cathode or second electrode of an electro-optical organic semiconductor device. The anode 110 includes a first anode region 112 which may consist essentially of black chrome or other metals, for example. This first anode region can be opaque, ie opaque. The anode 110 includes in 3A further a second anode region 114 which may, for example, consist essentially of the semitransparent material indium tin oxide (ITO). The mentioned materials can also be used in Alloys or mixtures within the first and second anode regions 112 and 114 occurrence. This also applies to further material details in the further course of this description. The second anode area 114 belongs to the first anode area 112 , Both anode areas 112 and 114 (eg, inverted "V" / ITO and chrome) are electrically connected together.

The anode 110 and the contacting area 120 are for example arranged on the surface of a substrate or embedded in the surface. The substrate may be a transparent or transparent material, in particular glass or a suitable plastic (polycarbonate, polymethyl methacrylate, etc.). Between the anode 110 and the contacting area 120 there is a gap for the anode.

3B shows a plan view of the electro-optical organic semiconductor device after a photoactive layer or layer sequence 130 (indicated by dashed line) on the first electrode 110 and the contacting area 120 the second electrode has been arranged so that the photoactive layer 130 almost the entire first electrode 110 covered, except for a peripheral region of the first anode region 112 , The fact that the photoactive layer 130 not entirely to the outer edge of the first anode region 112 and possibly even beyond, leads in many cases to a more precise demarcation of the first anode region 112 because the outer edge remains directly visible and not through the possibly semi-transparent photoactive layer 130 is covered. The outer edge of the electrode area 112 Thus it remains clear to a viewer, which may be relevant in particular for measurement applications and target optics. Alternatively, it is also possible that the photoactive layer or layer sequence 130 over the outer edge of the first electrode area 112 In addition, for example, if a precise optical representation of the outer edge of the first electrode region extends 112 is not required. According to further possible embodiments, the photoactive layer or layer sequence 130 the first electrode 110 also completely cover. In another embodiment, the photoactive layer is between 110 and 120 significantly smaller dimensioned, at least at a small area zw. 114 and 120 the photoactive layer is the first electrode 114 overlaps and it therefore the second electrode in the direction 120 allows a contact.

The photoactive layer / layer sequence 130 (sometimes referred to as "organic" for short) can be applied through a deposition process.

3C shows a further step after a second electrode 180 on the organic layer 130 and the contacting surface 120 was arranged. The second electrode 180 may also be deposited by a deposition process and made of, for example, aluminum or an aluminum alloy. The second electrode 180 can also be referred to as counter electrode. In 3C takes over the second electrode 180 the function of a cathode for the organic light emitting diode, wherein according to alternative embodiments, a function as an anode is possible.

The second electrode 180 overlaps both the photoactive layer 130 as well as the contact area 120 , However, the second electrode stops 180 in the area where the first electrode 110 , the photoactive layer 130 and the second electrode 180 one above the other, a distance to an edge of the organic layer 130 one, ie the second electrode 180 is in this area from the edge of the organic layer 130 spaced. This distance ensures that the second electrode 180 and the first electrode 110 not get too close and may cause a short circuit in this way. In particular, without a sufficiently large distance in the production of the electro-optical semiconductor component due to manufacturing tolerances, it could happen that the second electrode 180 unintentionally over the edge of the organic layer 130 extends out and thus in contact with the first electrode 110 arrives.

The second electrode 180 protrudes within a peripheral region of the organic layer 130 over the edge of the organic layer 130 out. This border area is at the in 3C illustrated embodiment, substantially the lower edge of the triangle. At the same time, this edge region is from the first electrode 110 spaced, essentially through the gap between the first electrode 110 and the contacting area 120 ,

3D shows a schematic plan view of the finished semiconductor device in operation. When the semiconductor device, for example an OLED, is turned on, essentially only the cathode region which projects into the anode region lights up. The glowing area is in 3D characterized by a vertical hatching. All other areas get no power (or only negligible power), because one of the electrodes is missing, and therefore do not light up.

The glowing area usually has precise and sharply defined edges. This can be achieved by the fact that the luminous area, so to speak by the geometric Intersection of the first and second electrodes 110 . 180 is defined and the electrodes 110 . 180 - in contrast to the organic layer 130 - have a precise structure.

In contrast to comparable structures that use passivation, in the approach presented here without passivation, a larger active luminous area can be generated since there is no passivation which overlaps the metallization and protrudes into the later active area and thus the area for the reduced light emission later.

The 3A to 3D can also be described as follows. In a first embodiment, a glass wafer with ITO coating (ITO is semi-transparent) is used and the ITO 114 structured. After that, the metallization 112 and 120 Applied (see stand 3A ). Thereafter, a lithographic / shadow mask structuring an organic layer 130 applied to the wafer ( 3B ). Finally, the opaque cathode 180 applied by means of lithography or shadow mask ( 3C ). When the OLED is switched on, the component is now illuminated by the ITO 114 in the glass then to the observer. This design is referred to as bottom-emission OLED (BOLED).

In a second exemplary embodiment, an opaque electrode (eg metal layer) is applied and patterned on a glass wafer. Then the organics and finally a semitransparent electrode (eg silver, aluminum) are applied. Now when the OLED is turned on, it shines away from the glass wafer (since the first contact is opaque and only the last electrode allows light to exit). This design is referred to as top-emission OLED (TOLED).

In a third embodiment, both electrodes are semitransparent (glass → electrode 1 → organic → electrode 2), which is why the OLED glows in both directions. Herewith a transparent OLED is produced.

The 4A to 4K show schematic cross-sectional views showing a method for producing microstructured organic layers with negative photoresist, in particular a manufacturing method for organic components.

• – Passende Lösungsmittel für diese Lithographie sind Fluorkohlenstoffflüssigkeiten wie im Patent US6144157 A beschrieben. Wie im Patent beschrieben wird, beschädigen die stark fluorierten Lösungsmittel die OLED nicht.
• – Mögliche Langzeiteffekte können Wasser und Sauerstoffkomponenten der fluorierten Flüssigkeiten sein. Trotzdem wurde in der Veröffentlichung SID Symposium digest of technical papers 42, 1740 (2011) eine Lebensdauer von bis zu 10000 Stunden gezeigt.
• – Typische Prozessparameter sind:
• – Ausheiztemperatur für den Lack für vor- und nach-Temperung der Belichtung sind 90°C für eine Minute.
• – Raumtemperatur ist für alle Prozesse ausreichend.
• – Druck für die Metallelektrodenabscheidung ist < 10^–6 mbar
• – Atmosphärendruck für die Lithographieprozesse ist ausreichend
• – Verschiedene Auftragungsmöglichkeiten und Lösungsmittel sind möglich, wie zum Beispiel aber nicht darauf beschränkt: spin-coating, spray coating, Lösungsmittelbad und Puddle-Entwicklung.
• – Die Lackbelichtungsdosis im UV (365 nm) beträgt typischerweise 20–100 mJ/cm²

For carrying out a substrate with (possibly prestructured) electrode and contact terminals, organic layers, photoresists and counter electrodes is used. The photoimageable photoresist is applied to the organic layers (Figure 4B). The photoresist is exposed in a defined manner to produce a patterned photoresist layer (Figure 4C). The unexposed part of the photoresist is removed by means of solvent (Fig. 4D). The form of the structured photoresist is transferred by means of etching steps into the organics and / or electrode layers (FIG. 4E). The remaining photoresist is removed by means of solvent (Fig. 4F). The solvents / liquids used for the application and removal of the photoresist do not affect the organic layers of the organic components and thus allow a lithographic structuring of the organics.

• Suitable solvents for this lithography are fluorocarbon liquids as in the patent US6144157A described. As described in the patent, the highly fluorinated solvents do not damage the OLED.
• - Possible long-term effects may be water and oxygen components of fluorinated liquids. Nevertheless, in the publication SID Symposium digest of technical papers 42, 1740 (2011) a life of up to 10,000 hours shown.
• - Typical process parameters are:
• - Baking temperature for the paint for pre- and post-exposure of the exposure are 90 ° C for one minute.
• - Room temperature is sufficient for all processes.
• - Pressure for metal electrode deposition is <10 ^-6 mbar
• - Atmospheric pressure for lithography processes is sufficient
• - Various application options and solvents are possible, such as but not limited to: spin-coating, spray coating, solvent bath and puddle development.
• The lacquer exposure dose in UV (365 nm) is typically 20-100 mJ / cm ²

By repetition and combination of these photoresist and etching processes, the electrodes, organic layers, leads and encapsulation are patterned (Figure 4G to K). Alternatively, or in combination with the etching process, the structuring can also be realized by lift-off processes with the photoresists and the functional layers. In a similar manufacturing process, positive varnish is used to perform the structuring. A combination of positive and negative varnishes for organic and electrode structuring is also possible in a further production process.

To 4A : A transparent substrate or carrier substrate 100 is used, being a structured electrode 110 is present with contact terminals and deposited on it two photoactive layers 130 . 140 (conductive organic materials). Further, on the transparent substrate 100 a contact surface 120 for a second electrode.

To 4B to 4D A photoresist solution is applied over the organic layers to form a photopatternable layer 150 (eg fluorinated photoresist). By means of selective UV illumination 170 and a photomask becomes a structure in the photoresist 150 transferred, which also creates an inverse structure through the unexposed lacquer. The unexposed lacquer is removed by means of solvent. The resulting photoresist (exposed and baked fluorinated photoresist) 150a corresponds almost exactly to the first electrode 110 , wherein the paint in at least one direction 1 to 100 microns overlaps the electrode edge (see 4D ).

In relation to 4C and 4D , Here, the unexposed photoresist is removed by means of solvent. After that, the through the paint 150a shaped structure into the organic layers 130 . 140 transfer ( 4D to 4E ). The transfer can be carried out by various methods, such as wet or dry etching. After the transfer process is the organics 130 . 140 removed everywhere, except for through the photoresist 150a protected places. Finally, the remaining photoresist 150a removed again ( 4F ). As a result, the resulting photoresist 150a and consequently also the remaining areas of the organic layers 130 . 140 ( 4E ) over the right edge of the first electrode 110 also extend, is also the first electrode 110 in turn spaced from a right edge of the organic layers 130 . 140 ,

Another photoresist layer 150 is applied ( 4G to 4I ) and by UV exposure 170 structured. The unexposed lacquer is removed again by means of solvent. The resulting photoresist structure is adapted to the shape of the first electrode and overlaps it at at least one location (in the region of the left edge of the organic layers 130 . 140 ) to prevent a later short circuit. The photoresist area 152a which is on the surface of the organic layer 140 remains, defines a distance between the (in 4I ) left edge of the organic layers 130 . 140 and the second electrode 180 , which is subsequently deposited and structured. In this way it can be ensured that the second electrode 180 a sufficient distance to those edge regions of the organic layers 130 . 140 adheres directly to the first electrode 110 adjoin.

In 4J and 4K becomes a second electrode 180 applied and by means of lift-off of the photoresist 150a structured.

5A shows a schematic perspective view of an electro-optical, organic semiconductor device according to at least one embodiment.

The electro-optical, organic semiconductor component comprises a photoactive layer or layer sequence 130 . 140 with at least one organic material. The photoactive layer or layer sequence 130 . 140 has a first main surface (in 5A the lower, hidden main surface of the organic layer 130 ), a second major surface 132 and a border 136 on, the first main surface and the second main surface 132 connects with each other. The electro-optical organic semiconductor device further comprises a first electrode 110 which is arranged on the first main surface, and a second electrode 180 located at the second main surface 132 is arranged. The second electrode 180 extends within at least one edge region 138 (hatched in 5A ) of the edge 136 up to the same or as in 5A shown, even over the edge 136 out. The first electrode 110 is spaced from the at least one edge region 138 ,

The second electrode 180 includes in 5A a first area section 186 located in a plane of the first major surface of the photoactive layer or layer sequence 130 . 140 extends. A second area section 182 is at the second main surface 132 the photoactive layer or layer sequence 130 . 140 or at least a portion of it arranged. The second electrode 180 further comprises a connection portion 184 between the first areal section 186 and the second sheet section 182 that extends along the at least one edge area 138 of the edge 136 extends.

5B shows a schematic plan view of an electro-optical organic semiconductor device according to at least one embodiment. On a surface of the substrate 100 are the first electrode 110 and the contacting area 120 arranged for the second electrode. The photoactive layer or layer sequence 130 . 140 is on a portion of the first electrode 110 arranged. The photoactive layer / layer sequence 130 . 140 extends by an offset 116 over the edge of the first electrode 110 (or a section of this border). The offset 116 defines a distance between the edge of the first electrode 110 and the edge of the organic layer / layer sequence 130 . 140 (purely informative and not restrictive to understand it should be noted that it is in 5B around the respective right edges).

The photoactive layer or layer sequence 130 . 140 has an in 5B invisible first major surface, of which a portion in contact with at least a portion of the first electrode 110 is. Alternatively, the subregion of the organic layer / layer sequence 130 . 140 also be in contact with the entire first electrode ( see, for. B. the embodiment of 6 ). A second main surface 132 the organic layer or layer sequence 130 . 140 is disposed opposite to the first main surface. As a rule, the first and second main surfaces are parallel to each other. Non-parallel arrangements of the main surfaces are not excluded, but also conceivable.

At the second main surface 132 the organic layer 130 . 140 is the second electrode 180 arranged such that a distance 188 between the second electrode 180 and those edges of the organic layer 130 . 140 is maintained, extending to the first electrode 110 extend. The second electrode 180 extends in the border area 138 over the photoactive layer 130 . 140 out. This edge area 138 The organic layer or layer sequence is in turn due to the offset 116 sufficiently spaced from the first electrode 110 to B. an effective electrical insulation between the first electrode 110 and the second electrode 180 provide. The second electrode 180 can be sections along the edge area 138 run. The second electrode 180 also extends to the contacting area 120 ,

6 shows a schematic cross-sectional view of an electro-optical, organic semiconductor device according to another embodiment. In this embodiment, the photoactive layer or layer sequence extends 130 . 140 over the entire first electrode 110 and thus completely covers them. The second electrode 180 is in turn on the entire second major surface of the organic layer or layer sequence 130 . 140 arranged and also extends beyond the right edge (in the representation of 6 ) of the organic layer / layer sequence 130 . 140 out to the edge thereof and further along a portion of the main surface of the substrate 100 to run until the second electrode 180 the contacting area 120 achieved and at least partially overlapped.

Also in the embodiment according to 6 it is ensured that the first electrode is spaced from the at least one edge region, within which the second electrode, which is arranged on the second main surface, extends to the edge or beyond.

The electrical contacting of the first electrode 110 can for example through the substrate 100 done through, what a via 412 to the bottom of the substrate 100 and a contact surface 414 can be provided on the underside. The via 412 and the contact area 414 are in 6 at a lateral edge of the first electrode 110 arranged to emit light through the semitransparent first electrode 110 and the underlying substrate 100 to disturb as little as possible. Other configurations of the electrical contacting of the first electrode 110 are also possible.

Further embodiments:

The exemplary embodiments or technical features enumerated below may occur separately or be combined with one another in any desired manner, or be combined essentially as desired with preceding exemplary embodiments.

• – mindestens eine Licht emittierende Schicht aus organischem Material
• – mindestens zwei flächige Elektroden dadurch gekennzeichnet, dass
• – die Elektrode A in mindestens einem Bereich größer ausgelegt ist als die emittierende Schicht und Elektrode B
• – die emittierende Schicht in ihrer Bauform in mindestens einem Bereich der Lichtemissionseinrichtung nicht von der Elektrode B überlappt wird bzw. genau auf der Organik liegt
• – die Elektrode B die Elektrode A überlappt, wobei dazwischen eine emittierende Schicht vorhanden ist
• – die Elektrode B die emittierende Schicht in mindestens einem Bereich überlappt, wobei keine Elektrode A darunter liegt
• – keine Isolationsschicht verwendet wird.
• – Die Reihenfolge der Elektroden A und B vertauscht/invertiert werden kann. (Siehe 3A bis 3D: wenn man erst die Aluminium-Kathode aufbringt, dann Organik und dann das Anodendreieck, würde es auch funktionieren → durch einfaches Invertieren des Layouts kann auch der gleiche Zweck erzielt werden).

According to further embodiments, an electroluminescent light-emitting device, a purely electrical or electronic device or OPD, inter alia, with organic layers applied to a substrate may comprise:

• - At least one light-emitting layer of organic material
• - At least two flat electrodes characterized in that
• - The electrode A is designed to be larger than the emitting layer and electrode B in at least one area
• - The emissive layer is not overlapped in its construction in at least one region of the light emitting device of the electrode B or lies exactly on the organics
• The electrode B overlaps the electrode A with an emitting layer therebetween
• - The electrode B overlaps the emitting layer in at least one area, with no electrode A underneath
• - no insulation layer is used.
• - The order of the electrodes A and B can be reversed / inverted. (Please refer 3A to 3D : if you first apply the aluminum cathode, then organic and then the anode triangle, it would work too → by simply inverting the layout, the same purpose can be achieved).

At least one electrode may be semitransparent and one electrode opaque.

At least two electrodes can be transparent.

An opaque layer can be integrated above or below the luminous structure / light absorption structure and its electrodes, which overlaps the entire luminous structure / light absorption structure, excluding the supply lines, and produces a clearly visible edge to the outside.

More than two electrodes can be generated and thus over- or / and adjacent emitting light structures / light absorption structures can be generated.

In addition to, above or below an emitting luminescent layer / layer stack, a light-sensitive component can also be integrated.

Different emission wavelengths can be controlled separately within a light emission device.

The organic layers including the electrode can be protected by air-tight encapsulation layers.

On the light emitting device, a highly transparent, possibly coated, protective plate can be attached.

A target or target structure can be used.

At least one crosshair can be displayed or structured as a substructure.

In an OPD array, different absorption wavelengths within a device may be separately detectable.

An OLED display can be integrated next to the OPD (s) and z. B. measurement data or additional information, eg. B. other sensors, display.

In the case of an electroluminescent light-emitting device or an OPD, the outer sides can be antireflected and / or provided with optical filters.

On the last applied electrode, a Lichtauskoppelschicht or Lichteinkoppelschicht can be applied.

On the last applied electrode, a thin-layer encapsulation, for. B. by ALD (atomic layer deposition), CVD (chemical vapor deposition), Vitex (multilayer of oxide and organic) or combinations thereof and the layer thickness and material selection can be designed so that the lowest possible parasitic light absorption takes place and the refractive index the thin-film encapsulation layer is adapted to the other component materials (substrate, cover glass, organics, electrodes).

The thin-layer encapsulation can be structured and cover only the sensitive areas and overlap so that lateral diffusion / migration of e.g. B. of water is prevented or minimized. In another embodiment, the thin-layer encapsulation may also cover the component and the adjacent transparent regions of the substrate (full-surface application of the thin-layer encapsulation).

One or more passive matrix OLED displays formed by anodes and cathode strips with optional layer separators can cover the substrate over the entire area or in regions. The drive circuit of the various matrix pixels is realized via an external device (i.e., passive pixel control by external help). One or more active-matrix OLED displays may cover the entire area or regions of the substrate, with the pixel driving circuitry inserted directly into the array (i.e., active pixel control on the substrate). One or more active or passive matrix OLED displays may partially cover the substrate.

One or more passive-matrix or active-matrix sensor arrays can cover the substrate over the entire area or in regions.

• a. Nutzung eines Substrates mit strukturierter Elektrode bzw. Aufbringen einer ersten Elektrode
• b. Auftragung einer Organikschicht und anschließend eines Photolackes über das Substrat, wobei eine photostrukturierbare Schicht entsteht.
• c. Selektive Beleuchtung des Photolackes mit UV-Licht um eine Struktur in dem Lack zu erzeugen.
• d. Das Substrat mit Photolack mit einem Entwicklerlösungsmittel behandeln, um den Photolack selektiv zu entfernen.
• e. Transfer der Photolackstruktur in die darunterliegenden organischen Schichten
• f. Das Substrat und den Photolack mit einem Lösungsmittel behandeln, um den Photolack zu entfernen.
• g. Ein weiterer Photolack auf den Wafer inkl. Elektrode und Organik aufbringen, um eine zweite Photolackschicht zu erzeugen.
• h. Selektive Belichtung des Photolackes mit UV-Licht, um eine definierte Struktur in den Photolack zu überführen.
• i. Das Substrat mit Photolack mit einem Entwicklerlösungsmittel behandeln, um den Photolack selektiv zu entfernen, ohne die bisherigen abgeschiedenen Schicht zu beeinflussen.
• j. Abscheiden einer zweiten Elektrode.
• k. Das Substrat und den Photolack mit einem Lösungsmittel behandeln, um den Photolack zu entfernen.
• l. Abscheidung einer Verkapselung für die organischen Schichten.

According to exemplary embodiments, a method for producing an organic component as described above can be provided with the following steps:

• a. Use of a substrate with a structured electrode or application of a first electrode
• b. Application of an organic layer and then a photoresist on the substrate, wherein a photostructurable layer is formed.
• c. Selective illumination of the photoresist with UV light to produce a structure in the paint.
• d. Treat the substrate with photoresist with a developer solvent to selectively remove the photoresist.
• e. Transfer of the photoresist structure into the underlying organic layers
• f. Treat the substrate and photoresist with a solvent to remove the photoresist.
• G. Apply another photoresist to the wafer, including the electrode and organics, to create a second layer of photoresist.
• H. Selective exposure of the photoresist to UV light to transfer a defined structure to the photoresist.
• i. Treat the substrate with photoresist with a developer solvent to selectively remove the photoresist without affecting the previous deposited layer.
• j. Depositing a second electrode.
• k. Treat the substrate and photoresist with a solvent to remove the photoresist.
• l. Deposition of an encapsulation for the organic layers.

The technical teaching described herein relates to novel microstructured organic electronic systems for use in electroluminescent light emitting devices or organic photodiodes used, for example, in optical positioning and / or reading devices as well as optical sensors.

As an application optical systems are addressed with luminous elements in which reticles, reticles, positioning devices, reading structures, viewfinders for cameras or in general structures of size smaller than for example 100 microns are used for reading / positioning. Analogously, applications for the detection of light, possibly spectrally resolved, are addressed.

The described invention can generally be used for the production of microstructured OLEDs / OPDs or purely electrical components. This includes both top- and bottom-emitting OLEDs or absorbing OPDs and transparent OLEDs / OPDs. The OLEDs can be used in so-called reticles, reticles (eg rifle scope for hunting weapons), telescopes, microscopes - thus generally magnifying optics with integrated lighting / display. For OPDs, there are possibilities for realizing a highly sensitive sensor element, since the achievable transparency does not hinder additional sensors, arrays are possible, and the combination with an OLED display can also be realized. A combination with other sensors, eg. B. distance sensors, humidity sensors, temperature sensors, etc. can be used to another functionality. When combined with a scintillator material, detectors for ionizing radiation can additionally be implemented or integrated.

The technical teaching described herein may also refer to an organic semiconductor device. Such an organic semiconductor device comprises an active layer or layer sequence comprising at least one organic material, the active layer or layer sequence having a first major surface, a second major surface, and an edge connecting the first major surface and the second major surface. A first electrode is disposed on the first main surface. A second electrode is disposed on the second major surface and extends within at least one edge portion of the edge to the edge or beyond. In this case, the first electrode is spaced from the at least one edge region.

The above-described further, optional embodiments of the photoactive layer and their features mentioned in the claims can be applied unchanged or with few changes to the active layer or layer sequence of the present organic semiconductor device. Likewise, optional embodiments of the first and second electrodes described above or in the claims may be applied to the electrodes of the present organic semiconductor device as they are or with minor adjustments. The method for producing an electro-optical, organic semiconductor component can also be converted by such changes into a method for producing an organic semiconductor component. The proposed organic semiconductor device may be, for example, a diode, a transistor, a memory cell, or a similar arrangement in the field of semiconductor technology, in particular an electronic, organic semiconductor device.

Although some aspects have been described in the context of a device, it will be understood that these aspects also constitute a description of the corresponding method, so that a block or a component of a device is also to be understood as a corresponding method step or as a feature of a method step. Similarly, aspects described in connection with or as a method step also represent a description of a corresponding block or detail or feature of a corresponding device. Some or all of the method steps may be performed by a hardware device (or using a hardware device). Apparatus), such as a microprocessor, a programmable computer or an electronic circuit can be realized. In some embodiments, some or more of the most important method steps may be performed by such an apparatus.

The embodiments described above are merely illustrative of the principles of the present invention. It will be understood that modifications and variations of the arrangements and details described herein will be apparent to others of ordinary skill in the art. Therefore, it is intended that the invention be limited only by the scope of the appended claims and not by the specific details presented in the description and explanation of the embodiments herein.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 10049024 B4 [0006, 0007, 0008]
• US 6144157 A [0053]

Cited non-patent literature

• M. Caironi, Y. -Y. Noh et al., Adv. Mater. 2013, 25, 4267-4295 [0010]
• SID Symposium digest of technical papers 42, 1740 (2011) [0053]

Claims (10)

Electro-optical, organic semi-conductor building element, comprising: a photoactive layer or layer sequence ( 130 . 140 ) with at least one organic material, wherein the photoactive layer or layer sequence ( 130 . 140 ) a first main surface, a second main surface and a rim ( 136 ) connecting the first main surface and the second main surface to each other; a first electrode ( 110 ) disposed on the first main surface; a second electrode ( 180 ), which is arranged on the second main surface and within at least one edge region ( 138 ) of the edge ( 136 ) extends to the edge or beyond; the first electrode ( 110 ) spaced from the at least one edge region ( 138 ). An electro-optic organic semiconductor device according to claim 1, wherein the edge ( 136 ) has an edge surface and wherein the second electrode ( 180 ) within the at least one edge region ( 138 ) extends along the edge surface. An electro-optical organic semiconductor device according to claim 2, wherein said second electrode ( 180 ) comprises: a first planar section located in a plane of the first main surface of the photoactive layer or layer sequence ( 130 . 140 ) extends; a second areal section on the second main surface of the photoactive layer or layer sequence ( 130 . 140 ); and a connecting section between the first planar section and the second planar section, which extends along the at least one edge region (FIG. 138 ) of the edge surface extends. An electro-optical organic semiconductor device according to any one of the preceding claims, further comprising a substrate, wherein the first electrode ( 110 ) is arranged on a first main surface of the substrate and wherein the photoactive layer or layer sequence ( 130 . 140 ) is also arranged on the first main surface of the substrate and the first electrode ( 110 ) at least partially overlapped. An electro-optic organic semiconductor device according to claim 4, further comprising a bonding pad disposed on the first major surface of the substrate spaced from the first electrode, the second electrode (12). 180 ) over the edge ( 136 ) extends up to the contacting surface and this at least partially overlaps. Electro-optical, organic semiconductor component according to one of the preceding claims, wherein the second electrode ( 180 ) comprises a deposited and photolithographed conductive material. Electro-optical, organic semiconductor component according to one of the preceding claims, wherein no passivation layer is necessary for electrical insulation between the first electrode and the second electrode. Electro-optical, organic semiconductor component according to one of the preceding claims, wherein the electro-optical, organic semiconductor device is an organic light-emitting diode (OLED), purely electrical component or an organic photodiode (OPD). Electro-optical, organic semiconductor component according to one of the preceding claims, wherein the photoactive layer or layer sequence ( 130 . 140 ) has an area of at most 4 mm ² . A method of fabricating an electro-optic organic semiconductor device, the method comprising: providing a substrate having a first electrode and a first electrode ( 110 ) at least partially overlapping photoactive layer or layer sequence ( 130 . 140 ) on a first major surface of the substrate; Coating the substrate with an electrically conductive material; Structuring the electrically conductive material so that the remaining electrically conductive material within at least one edge region ( 138 ) of a margin ( 136 ) of the photoactive layer or layer sequence ( 130 . 140 ) to the edge ( 136 ) or beyond, wherein the at least one edge region ( 138 ) is spaced from the first electrode.

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