KR20210063209A - Display device, mask assembly, method for manufacturing a mask assembly, apparatus and method for manufacturing a display device - Google Patents

Abstract

Disclosed are a display device, a mask assembly, a manufacturing method of the mask assembly, a manufacturing device of the display device, and a manufacturing method of the display device. The present invention manufactures the display device through a mask sheet by including the mask sheet, wherein the mask sheet has pattern holes having different shapes and different sizes in one mask sheet and at least one of adjacent pattern holes is different.

Description

A display device, a mask assembly, a method for manufacturing a mask assembly, an apparatus for manufacturing a display device, and a method for manufacturing a display magnetic device TECHNICAL FIELD

Embodiments of the present invention relate to an apparatus and method, and more particularly, to a display device, a mask assembly, a method of manufacturing a mask assembly, an apparatus for manufacturing a display device, and a method of manufacturing a display device.

Electronic devices based on mobility are widely used. In addition to small electronic devices such as mobile phones, tablet PCs have recently been widely used as mobile electronic devices.

Such a mobile electronic device includes a display device to provide visual information such as an image or video to a user in order to support various functions. Recently, as other components for driving the display device are miniaturized, the proportion of the display device in electronic devices is gradually increasing, and a structure that can be bent to have a predetermined angle in a flat state is being developed.

In such a display device, pixels may be arranged in various regions to have different resolutions. In this case, the performance of the display device may depend on the shape of the mask assembly used to deposit the organic material on these pixels.

In general, in order to manufacture a display device including display regions having different resolutions, a mask assembly corresponding to each display region may be separately manufactured and used. When the mask assembly is separately manufactured as described above, manufacturing cost is high, and alignment between each mask assembly and the substrate is not precise, so it may be difficult to manufacture a display device having a desired quality. Embodiments of the present invention provide a display device having a precise pixel pattern, a mask assembly capable of manufacturing a display device having a precise pattern through one mask assembly, a method for manufacturing a mask assembly, a display device manufacturing apparatus, and a display device manufacturing method provide a way

According to an embodiment of the present invention, a substrate including a first display area including a transmissive area and a second display area disposed to surround at least a portion of the first display area, the substrate being disposed in the first display area, a first pixel including a first pixel electrode, a first intermediate layer, and a first counter electrode; and a second pixel disposed in the second display area and including a second pixel electrode, a second intermediate layer, and a second counter electrode; Each of the first intermediate layer and the second intermediate layer includes a portion having a constant thickness and a section in which the thickness is variable, and one of the section in which the thickness of the first intermediate layer varies and the section in which the thickness of the second intermediate layer varies. The length is different from the second length of the other one of a section in which the thickness of the first intermediate layer is variable or a section in which the thickness of the second intermediate layer is variable.

In this embodiment, one of the first length and the second length may be shorter than the other one of the first length or the second length.

In this embodiment, the resolution of the image provided in the first display area may be different from the resolution of the image provided in the second display area.

In the present embodiment, the display device may further include a component disposed on one surface of the substrate to correspond to the first display area and including an electronic element that emits or receives light.

In the present exemplary embodiment, the light transmittance of the first display area and the light transmittance of the second display area may be different from each other.

In this embodiment, the size of the planar shape of the first intermediate layer may be greater than or equal to the size of the planar shape of the second intermediate layer.

In another embodiment of the present invention, in a mask assembly including a mask sheet, the mask sheet includes a first area including at least one first pattern hole, a second area including at least one or more second pattern holes, , an inner surface of one of the first pattern hole or the second pattern hole includes a protrusion protruding into one of the first pattern hole or the second pattern hole, and the inner surface of the first pattern hole and the second pattern hole The inner surfaces of the pattern holes disclose different mask assemblies.

In this embodiment, the protrusion may include a first protrusion protruding from the inner surface of the first pattern hole into the first pattern hole.

In this embodiment, the thickness of the first region and the thickness of the second region may be the same or different from each other.

In this embodiment, the planar size of the second pattern hole formed on one surface of the second area may be greater than or equal to the planar size of the first pattern hole formed on one surface of the first area extending from the one surface of the second area.

In the present embodiment, in the mask sheet, a plurality of reference holes may be disposed at an edge of the second region.

In this embodiment, shapes of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet may be different from each other.

Another embodiment of the present invention includes the steps of disposing a first photoresist to have a first opening on a first surface of a base material, and a second photoresist to have a second opening and a third opening on a second surface of a base material. disposing a resist; spraying an etching solution into the first opening to etch a portion of the first surface of the base material; and spraying the etching solution into the first opening and the second opening to remove the first surface of the base material. Disclosed is a method of manufacturing a mask assembly comprising etching a portion of two surfaces to form a first pattern hole and a second pattern hole penetrating the base material.

In this embodiment, the width of the second opening may be greater than the width of the first opening.

In the present embodiment, a protrusion protruding from an inner surface of the second pattern hole into the inside of the second pattern hole may be disposed inside the first pattern hole.

In the present embodiment, a distance from the first surface to the protrusion may be different from a distance from the second surface to the protrusion.

In this embodiment, the method may further include removing the first photoresist.

In this embodiment, the method may further include removing the second photoresist.

Another embodiment of the present invention includes the steps of disposing a first photoresist having a first opening positioned in a first region of a base material on a first surface of the base material, and a second photoresist corresponding to the first opening. disposing a second photoresist having an opening on the second surface of the base material; spraying an etching solution into the first opening to etch a portion of the first surface of the base material; Forming a first pattern hole penetrating the base material by spraying an etching solution into the opening, and irradiating a laser beam to a second area adjacent to the first area among the second surfaces of the base material to penetrate the base material Disclosed is a method of manufacturing a mask assembly, including forming a second pattern hole.

In this embodiment, shapes of the first pattern hole and the second pattern hole on a plane parallel to the first surface or the second surface may be different from each other.

In this embodiment, the areas of the first pattern hole and the second pattern hole on a plane parallel to the first surface or the second surface may be different from each other.

In this embodiment, the number of the first pattern hole and the second pattern hole per same area may be different from each other.

In this embodiment, the method may further include removing the first photoresist.

In this embodiment, the method may further include removing the second photoresist.

In this embodiment, in the forming of the second pattern hole, the width of the second pattern hole in a direction perpendicular to the thickness direction of the base material gradually increases from the first surface to the second surface. It may include the step of becoming

In this embodiment, the second photoresist further includes a third opening formed to correspond to the entire second region, and a portion of the second surface of the base material is etched by spraying an etchant into the third opening. It may further include the step of

In this embodiment, the method may include forming a second pattern hole penetrating through the base material by irradiating a laser beam on the etching surface formed corresponding to the third opening among the second surfaces of the base material.

In this embodiment, the second photoresist is located in the second region, and further includes a plurality of fourth openings spaced apart from each other, and the second surface of the base material by spraying an etchant into the fourth openings It may further include the step of etching a portion of the.

In this embodiment, the forming of the second pattern hole comprises irradiating a laser beam to an etched surface formed corresponding to the fourth opening among the second surfaces of the base material to penetrate the second pattern hole through the base material. It may include the step of forming

In this embodiment, the second photoresist further includes a plurality of fifth openings positioned at the edge of the second region, and spraying an etchant into the fifth openings to form the second surface of the base material. The method may further include forming at least two reference holes by etching a portion.

In this embodiment, before irradiating the laser beam, the method may further include aligning the base material using the reference holes.

Another embodiment of the present invention includes a chamber, a mask assembly disposed inside the chamber, and a deposition source for supplying a deposition material to a display substrate disposed to face the mask assembly, wherein the mask assembly includes the deposition source. and a mask sheet through which a deposition material supplied from a source passes, the mask sheet comprising: a first area including at least one first pattern hole; a second area including at least one or more second pattern holes; An inner surface of one of the first pattern hole or the second pattern hole includes a protrusion protruding into one of the first pattern hole or the second pattern hole, and an inner surface of the first pattern hole and an inner surface of the second pattern hole discloses an apparatus for manufacturing different display devices.

In this embodiment, the protrusion may include a first protrusion protruding from the inner surface of the first pattern hole into the first pattern hole.

In this embodiment, the thickness of the first region and the thickness of the second region may be the same or different from each other.

In this embodiment, the planar size of the second pattern hole formed on one surface of the second area may be greater than or equal to the planar size of the first pattern hole formed on one surface of the first area extending from the one surface of the second area.

In this embodiment, a plurality of reference holes positioned at the edge of the first area or the edge of the second area may be included.

In the present embodiment, among the thicknesses in the second region of the mask sheet, the thickness in the region around the second pattern hole is smaller than the thickness in the first region, and in the region between the second pattern holes adjacent to each other. The thickness of may be the same as the thickness in the first region.

In the present embodiment, the width of the second pattern hole in a direction perpendicular to the thickness direction of the mask sheet may be formed to gradually increase from one surface to the other surface of the mask sheet.

In this embodiment, shapes of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet may be different from each other.

In this embodiment, the areas of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet may be different from each other.

In this embodiment, the number of the first pattern hole and the second pattern hole per same area may be different from each other.

In the present embodiment, in the mask sheet, a plurality of reference holes may be disposed at an edge of the second region.

Another embodiment of the present invention includes the steps of arranging and aligning a display substrate and a mask assembly in a chamber, and supplying a deposition material by passing the mask assembly from a deposition source to the display substrate, wherein the mask The assembly includes a mask sheet through which the deposition material supplied from the deposition source passes, and the mask sheet includes a first area including at least one first pattern hole and a second area including at least one or more second pattern holes. And, an inner surface of one of the first pattern hole or the second pattern hole includes a protrusion protruding into one of the first pattern hole or the second pattern hole, the inner surface of the first pattern hole and the second pattern hole The inner surface of the two pattern holes is different from each other, and a method of manufacturing a display device is disclosed.

In this embodiment, the protrusion may include a first protrusion protruding from the inner surface of the first pattern hole into the first pattern hole.

In this embodiment, the thickness of the first region and the thickness of the second region may be the same or different from each other.

In this embodiment, the planar size of the inlet of the first pattern hole formed on one surface of the first area is the planar size of the inlet of the second pattern hole formed on one surface of the second area extending from the one surface of the first area. may be more than

In the present embodiment, in the mask sheet, a plurality of reference holes may be disposed at an edge of the second region.

Another embodiment of the present invention includes forming a first intermediate layer on a first display area of a display substrate and forming a second intermediate layer on a second display area of the display substrate, Each of the first intermediate layer and the second intermediate layer includes a portion having a constant thickness and a section in which the thickness is variable, and the first length of one of the section in which the thickness of the first intermediate layer is variable or the section in which the thickness of the second intermediate layer is variable is Disclosed is a method of manufacturing a display device that is different from another second length of a section in which the thickness of the first intermediate layer is variable or a section in which the thickness of the second intermediate layer is variable.

In this embodiment, one of the first length and the second length may be shorter than the other one of the first length or the second length.

In this embodiment, the resolution of the image provided in the first display area may be different from the resolution of the image provided in the second display area.

In the present embodiment, the method may further include disposing a component disposed on one surface of the substrate to correspond to the first display area and including an electronic element that emits or receives light.

In the present exemplary embodiment, the light transmittance of the first display area and the light transmittance of the second display area may be different from each other.

In this embodiment, the size of the planar shape of the first intermediate layer may be greater than or equal to the size of the planar shape of the second intermediate layer.

In this embodiment, a thickness of a section having a constant thickness among the first intermediate layer may be the same as a thickness of a section having a constant thickness among the second intermediate layer.

Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

These general and specific aspects may be practiced using systems, methods, computer programs, or any combination of systems, methods, and computer programs.

The display device according to the embodiments of the present invention is capable of realizing a precise image.

The mask assembly, the display device manufacturing apparatus, and the display device manufacturing method according to the embodiments of the present invention may deposit a deposition material in a precise pattern on a substrate.

In addition, the mask assembly, the display device manufacturing apparatus, and the display device manufacturing method according to the embodiments of the present invention may manufacture a display device including display areas having different resolutions.

In the method of manufacturing a mask assembly according to embodiments of the present invention, it is possible to form pattern holes having different sizes and shapes in one mask sheet.

The manufacturing method of the mask assembly according to the embodiments of the present invention can minimize the deformation of the mask sheet even when pattern holes having different sizes and shapes are formed in one mask sheet, and the shape of each pattern hole can be precisely determined. It is possible to manufacture

1 is a perspective view illustrating a display device according to an embodiment of the present invention.
2 is a cross-sectional view schematically illustrating a display device according to an exemplary embodiment.
3 is a plan view schematically illustrating a display panel according to an exemplary embodiment.
4 and 5 are equivalent circuit diagrams of a pixel of a display panel according to an exemplary embodiment of the present invention.
6 is a layout diagram schematically illustrating a pixel circuit of a pixel according to an exemplary embodiment of the present invention.
7 is a cross-sectional view taken along lines II' and II-II' of FIG. 6 .
8 is a cross-sectional view illustrating an apparatus for manufacturing a display device according to an exemplary embodiment.
9 is a perspective view illustrating the mask assembly shown in FIG. 8 .
10A and 10B are plan views schematically illustrating a part of a mask sheet and a support frame of a mask assembly according to an embodiment of the present invention.
11A is a plan view illustrating an arrangement of pixels of a display device according to an exemplary embodiment.
11B is a plan view illustrating a part of a first mask sheet used in manufacturing the first main pixel and the first auxiliary pixel illustrated in FIG. 11A .
11C is a plan view illustrating a part of a second mask sheet used in manufacturing the second main pixel and the second auxiliary pixel illustrated in FIG. 11A .
11D is a plan view illustrating a part of a third mask sheet used in manufacturing the third main pixel and the third auxiliary pixel illustrated in FIG. 11A .
12 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.
13 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.
14 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.
15A to 15F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to an embodiment of the present invention.
16A to 16F are cross-sectional views schematically illustrating a manufacturing procedure of a mask sheet according to another embodiment of the present invention.
17A to 17G are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention.
18A to 18F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention.
19 is a cross-sectional view schematically showing a laser processing apparatus according to an embodiment of the present invention.
20A to 20F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention.
21 is a perspective view illustrating a display device according to another exemplary embodiment.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding constituent elements are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are used for the purpose of distinguishing one constituent element from other constituent elements rather than a limiting meaning.

In the following examples, expressions in the singular include plural expressions unless the context clearly indicates otherwise.

In the following embodiments, terms such as include or have means that the features or elements described in the specification are present, and do not preclude the possibility of adding one or more other features or components in advance.

In the following embodiments, when a part such as a film, a region, or a component is on or on another part, not only the case directly above the other part, but also another film, region, component, etc. are interposed therebetween. Includes cases where there is.

In the drawings, components may be exaggerated or reduced in size for convenience of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and thus the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When a certain embodiment can be implemented differently, a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

1 is a perspective view illustrating a display device according to an embodiment of the present invention.

Referring to FIG. 1 , the display device DD includes a display area DA that implements an image and a peripheral area PA that does not implement an image. The display area DA may include a first display area DA1 and a second display area DA2 disposed adjacent to each other having different resolutions. For example, the resolution of the first display area DA1 may be lower than that of the second display area DA2 . In another embodiment, the resolution of the first display area DA1 may be greater than the resolution of the second display area DA2. In this case, the resolution of each display area is arranged in each display area, and the distance between the centers of adjacent pixels, the size of the pixels, the total area of pixels per unit area of each display area, and/or the number of pixels per unit area of each display area etc. can be determined. That is, among the display areas, a display area having a lower resolution may have a greater distance between the centers of adjacent pixels or a smaller number of pixels disposed in a unit area (or the same area) than a display area having a higher resolution. . Alternatively, a display area having a smaller resolution may be smaller than another display area having a total area of pixels disposed on a unit area (or the same area). Hereinafter, for convenience of description, a case in which the resolution of the first display area DA1 is smaller than that of the second display area DA2 will be described in detail.

The light transmittance of the first display area DA1 may be different from the light transmittance of the second display area DA2 . For example, the light transmittance of one of the first display area DA1 or the second display area DA2 may be greater than the light transmittance of the other of the first display area DA1 or the second display area DA2. . Hereinafter, for convenience of description, a case in which the light transmittance of the first display area DA1 is greater than the light transmittance of the second display area DA2 will be described in detail.

The first display area DA1 and the second display area DA2 as described above may be arranged in various shapes. For example, a portion of the edge of the first display area DA1 is disposed inside the second display area DA2 , and another portion of the edge of the first display area DA1 meets the peripheral area PA. can In another embodiment, the first display area DA1 may be disposed inside the second display area DA2 so that the edge of the first display area DA1 may be surrounded by the second display area DA2 . Hereinafter, for convenience of description, a case in which the first display area DA1 is disposed inside the second display area DA2 will be described in detail.

The first display area DA1 and/or the second display area DA2 may be an area in which a component such as a sensor using infrared, visible light, or sound is disposed under the first display area DA1 and/or the second display area DA2, as will be described later with reference to FIG. . Hereinafter, for convenience of description, a case where the component is disposed in the first display area DA1 will be described in detail.

A plurality of main pixels PXm are disposed in the second display area DA2 , and the plurality of main pixels PXm may emit light and provide a main image through the light. The first display area DA1 may include a transmission area TA through which light and/or sound output from the component or traveling toward the component from the outside can pass. In one embodiment of the present invention, when infrared rays are transmitted through the first display area DA1, the light transmittance is about 10% or more, more preferably 20% or more, 25% or more, 50% or more, or 85% or more. or more, or more than 90%.

In the present exemplary embodiment, a plurality of sub-pixels PXa may be disposed in the first display area DA1, and a predetermined image may be provided using light emitted from the plurality of sub-pixels PXa. The image provided in the first display area DA1 is an auxiliary image and may have a lower resolution than the image provided in the second display area DA2 . That is, the first display area DA1 includes a transmission area TA through which light and/or sound can pass, and the number of sub-pixels PXa that can be disposed per unit area is the second display area DA2 . ) may be less than the number of main pixels PXm disposed per unit area. In another embodiment, the total area of the auxiliary pixels PXa disposed in the unit area of the first display area DA1 may be smaller than the total area of the main pixels PXm disposed in the unit area of the second display area DA2. have. In another embodiment, the distance between the centers of the auxiliary pixels PXa adjacent to each other and disposed in the first display area DA1 is greater than the distance between the centers of the main pixels PXm disposed in the second display area DA2 and adjacent to each other. can be large In this case, the sub-pixel PXa and the main pixel PXm whose resolutions are compared with each other may emit the same color.

Hereinafter, an organic light emitting diode display will be exemplified as the display device DD according to an exemplary embodiment, but the display device of the present invention is not limited thereto. As another embodiment, various types of display devices such as an inorganic EL display (Inorganic Light Emitting Display), a quantum dot light emitting display (Quantum Dot Light Emitting Display), etc. may be used.

Although FIG. 1 illustrates that the first display area DA1 is disposed on one side (upper right side) of the quadrangular second display area DA2, the present invention is not limited thereto. The shape of the second display area DA2 may be a circle, an ellipse, or a polygon such as a triangle or a pentagon, and it goes without saying that the position and number of the first display area DA1 may be variously changed.

2 is a cross-sectional view schematically illustrating a display device according to an exemplary embodiment. FIG. 2 may correspond to a cross-section taken along line A-A' of FIG. 1 .

Referring to FIG. 2 , the display device DD may include a display panel 2 including a display element and a component 3 positioned below the display panel 2 and corresponding to the first display area DA1 . have.

The display panel 2 may include a substrate 100 , a display element layer 200 disposed on the substrate 100 , and a thin film encapsulation layer 300 as a sealing member for sealing the display element layer 200 . . In addition, the display panel 2 may further include a lower protective film 175 disposed below the substrate 100 .

The substrate 100 may include glass or a polymer resin. Polymer resins include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethyeleneterepthalate, polyphenylene sulfide, polya It may include a polymer resin such as polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The substrate 100 including the polymer resin may have flexible, rollable, or bendable properties. The substrate 100 may have a multilayer structure including a layer including the above-described polymer resin and an inorganic layer (not shown).

The display element layer 200 may include a circuit layer including a thin film transistor (TFT), an organic light emitting diode (OLED) as a display element, and an insulating layer IL therebetween.

A main pixel PXm including a thin film transistor TFT and an organic light-emitting diode (OLED) connected thereto is disposed in the second display area DA2 , and the thin film transistor is disposed in the first display area DA1 . A sub-pixel PXa including a TFT and an organic light-emitting diode (OLED) connected thereto is disposed, and wirings electrically connected to the main pixel PXm and the sub-pixel PXa (not shown) This can be placed

In addition, the thin film transistor TFT and the transmission area TA in which the pixel is not disposed may be disposed in the first display area DA1 . The transmission area TA may be understood as an area through which light/signal emitted from the component 3 or light/signal incident to the component 3 is transmitted (tansmission).

The component 3 may be located in the first display area DA1 . The component 3 may be an electronic element using light or sound. For example, the component 3 is a sensor that receives and uses light, such as an infrared sensor, a sensor that outputs and senses light or sound to measure a distance or recognizes a fingerprint, etc., a small lamp that outputs light, or a speaker that outputs a sound etc. Of course, in the case of an electronic element using light, light of various wavelength bands such as visible light, infrared light, and ultraviolet light may be used. The number of components 3 disposed in the first display area DA1 may be plural. For example, as the component 3 , a light emitting device and a light receiving device may be provided together in one first display area DA1 . Alternatively, the light emitting unit and the light receiving unit may be simultaneously provided in one component 3 .

The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In this regard, FIG. 2 shows the first and second inorganic encapsulation layers 310 and 330 and the organic encapsulation layer 320 therebetween.

The first and second inorganic encapsulation layers 310 and 330 may include one or more inorganic insulating materials such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. . The organic encapsulation layer 320 may include a polymer-based material. Polymer-based materials include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.) or any combination thereof.

The lower protective film 175 may be attached to the lower portion of the substrate 100 to support and protect the substrate 100 . The lower protective film 175 may have an opening 175OP corresponding to the first display area DA1. By providing the opening 175OP in the lower protective film 175 , the light transmittance of the first display area DA1 may be improved. The lower protective film 175 may include polyethylene terephthalate (PET) or polyimide (PI).

An area of the first display area DA1 may be larger than an area in which the component 3 is disposed. In FIG. 2 , the area of the first display area DA1 and the opening 175OP is shown to be the same, but the area of the opening 175OP provided in the lower protective film 175 is the same as the area of the first display area DA1. may not match. For example, the area of the opening 175OP may be smaller than that of the first display area DA1.

Although not shown, components such as an input sensing member for sensing a touch input, an antireflection member including a polarizer and a retarder or a color filter and a black matrix, and a transparent window are provided on the display panel 2 . more can be placed.

Meanwhile, although the thin film encapsulation layer 300 is used as an encapsulation member for sealing the display element layer 200 in this embodiment, the present invention is not limited thereto. For example, as a member for sealing the display element layer 200 , a sealing substrate bonded to the substrate 100 by a sealant or a frit may be used.

3 is a plan view schematically illustrating a display panel according to an exemplary embodiment.

Referring to FIG. 3 , various components constituting the display panel 2 are disposed on the substrate 100 . The substrate 100 includes a display area and a peripheral area PA surrounding the display area. The display area includes a second display area DA2 in which a main image is displayed and a first display area DA1 in which a transmissive area TA is displayed and an auxiliary image is displayed.

A plurality of main pixels PXm are disposed in the second display area DA2 . Each of the main pixels PXm may include a display element such as an organic light emitting diode OLED. Each main pixel PXm may emit, for example, red, green, blue, or white light through the organic light emitting diode OLED. As described above, the main pixel PXm in the present specification may be understood as a pixel emitting light of any one color among red, green, blue, and white. The second display area DA2 may be covered with the encapsulation member described above with reference to FIG. 2 to be protected from external air or moisture.

The first display area DA1 may be disposed inside the second display area DA2 , and a plurality of auxiliary pixels PXa are disposed in the first display area DA1 . Each of the auxiliary pixels PXa may include a display element such as an organic light emitting diode. Each sub-pixel PXa may emit, for example, red, green, blue, or white light through the organic light emitting diode. As described above, the auxiliary pixel PXa in the present specification may be understood as a pixel emitting light of any one color among red, green, blue, and white. Meanwhile, the first display area DA1 may include a transmission area TA disposed between the auxiliary pixels PXa.

Since the first display area DA1 includes the transparent area TA, the resolution of the first display area DA1 may be smaller than that of the second display area DA2. For example, the resolution of the first display area DA1 may be about 1/2 that of the second display area DA2. In some embodiments, the resolution of the second display area DA2 may be 400 ppi or more, and the resolution of the first display area DA1 may be about 200 ppi.

4 and 5 are equivalent circuit diagrams of a pixel of a display panel according to an exemplary embodiment of the present invention.

4 and 5 , each of the pixels PXm and PXa includes a pixel circuit PC connected to a scan line SL and a data line DL and an organic light emitting diode OLED connected to the pixel circuit PC. includes

The pixel circuit PC includes a driving thin film transistor T1 , a switching thin film transistor T2 , and a storage capacitor Cst. The switching thin film transistor T2 is connected to the scan line SL and the data line DL, and data input through the data line DL according to the scan signal Sn input through the scan line SL The signal Dm is transmitted to the driving thin film transistor T1.

The storage capacitor Cst is connected to the switching thin film transistor T2 and the driving voltage line PL, and the voltage received from the switching thin film transistor T2 and the driving voltage ELVDD or power supplied to the driving voltage line PL voltage) and store the voltage corresponding to the difference.

The driving thin film transistor T1 is connected to the driving voltage line PL and the storage capacitor Cst, and flows through the organic light emitting diode OLED from the driving voltage line PL in response to the voltage value stored in the storage capacitor Cst. The drive current can be controlled. The organic light emitting diode (OLED) may emit light having a predetermined luminance by a driving current.

In FIG. 4 , a case in which the pixel circuit PC includes two thin film transistors and one storage capacitor has been described, but the present invention is not limited thereto. As shown in FIG. 5 , the pixel circuit PC may include seven thin film transistors and one storage capacitor. Although it is illustrated in FIG. 5 as including one storage capacitor, the pixel circuit PC may include two or more storage capacitors.

Referring to FIG. 5 , each of the pixels PXm and PXa includes a pixel circuit PC and an organic light emitting diode OLED connected to the pixel circuit PC. The pixel circuit PC may include a plurality of thin film transistors and a storage capacitor. The thin film transistors and the storage capacitor may be connected to the signal lines SL, SL-1, EL, and DL, the initialization voltage line VL, and the driving voltage line PL.

5 illustrates that the pixels PXm and PXa are connected to the signal lines SL, SL-1, EL, and DL, the initialization voltage line VL, and the driving voltage line PL, but the present invention is not limited thereto. . In another embodiment, at least one of the signal lines SL, SL-1, EL, and DL, the initialization voltage line VL, and the driving voltage line PL may be shared by neighboring pixels.

The signal line is a scan line SL that transmits the scan signal Sn, and a previous scan line SL that transmits the previous scan signal Sn-1 to the first initialized thin film transistor T4 and the second initialized thin film transistor T7. -1), the light emission control line EL, which transmits the light emission control signal En to the operation control thin film transistor T5 and the light emission control thin film transistor T6, intersects the scan line SL, and the data signal Dm It contains a data line (DL) to transmit. The driving voltage line PL transfers the driving voltage ELVDD to the driving thin film transistor T1 , and the initialization voltage line VL transfers the driving thin film transistor T1 and an initialization voltage Vint for initializing the pixel electrode.

The driving gate electrode G1 of the driving thin film transistor T1 is connected to the lower electrode CE1 of the storage capacitor Cst, and the driving source electrode S1 of the driving thin film transistor T1 is the operation control thin film transistor T5. ) is connected to the driving voltage line PL, and the driving drain electrode D1 of the driving thin film transistor T1 is electrically connected to the pixel electrode of the organic light emitting diode OLED via the emission control thin film transistor T6. is connected with The driving thin film transistor T1 receives the data signal Dm according to the switching operation of the switching thin film transistor T2 and supplies the _{driving current I OLED to the organic light emitting diode OLED.}

The switching gate electrode G2 of the switching thin film transistor T2 is connected to the scan line SL, and the switching source electrode S2 of the switching thin film transistor T2 is connected to the data line DL, and the switching The switching drain electrode D2 of the thin film transistor T2 is connected to the driving source electrode S1 of the driving thin film transistor T1 and connected to the driving voltage line PL via the operation control thin film transistor T5. . The switching thin film transistor T2 is turned on according to the scan signal Sn transmitted through the scan line SL and drives the data signal Dm transmitted through the data line DL Driving the thin film transistor T1 A switching operation of transferring to the source electrode S1 is performed.

The compensation gate electrode G3 of the compensation thin film transistor T3 is connected to the scan line SL, and the compensation source electrode S3 of the compensation thin film transistor T3 is the driving drain electrode D1 of the driving TFT T1. ) and connected to the pixel electrode of the organic light emitting diode OLED via the emission control thin film transistor T6, and the compensation drain electrode D3 of the compensation thin film transistor T3 is the lower part of the storage capacitor Cst. It is connected to the electrode CE1 , the first initialization drain electrode D4 of the first initialization thin film transistor T4 , and the driving gate electrode G1 of the driving thin film transistor T1 . The compensation thin film transistor T3 is turned on according to the scan signal Sn received through the scan line SL to electrically connect the driving gate electrode G1 and the driving drain electrode D1 of the driving thin film transistor T1. By connecting the driving thin film transistor (T1) is diode-connected.

The first initialization gate electrode G4 of the first initialization thin film transistor T4 is connected to the previous scan line SL-1, and the first initialization source electrode S4 of the first initialization thin film transistor T4 is The second initialization drain electrode D7 of the initialization thin film transistor T7 is connected to the initialization voltage line VL, and the first initialization drain electrode D4 of the first initialization thin film transistor T4 is the storage capacitor Cst. is connected to the lower electrode CE1 of the , the compensation drain electrode D3 of the compensation thin film transistor T3 and the driving gate electrode G1 of the driving TFT T1. The first initialization thin film transistor T4 is turned on according to the previous scan signal Sn-1 received through the previous scan line SL-1 to drive the initialization voltage Vint. The driving gate of the thin film transistor T1 An initialization operation for initializing the voltage of the driving gate electrode G1 of the driving thin film transistor T1 by transferring it to the electrode G1 is performed.

The operation control gate electrode G5 of the operation control thin film transistor T5 is connected to the light emission control line EL, and the operation control source electrode S5 of the operation control thin film transistor T5 is connected to the driving voltage line PL and connected, and the operation control drain electrode D5 of the operation control thin film transistor T5 is connected to the driving source electrode S1 of the driving thin film transistor T1 and the switching drain electrode D2 of the switching thin film transistor T2. have.

The emission control gate electrode G6 of the emission control thin film transistor T6 is connected to the emission control line EL, and the emission control source electrode S6 of the emission control thin film transistor T6 is the driving thin film transistor T1. It is connected to the driving drain electrode D1 and the compensation source electrode S3 of the compensation thin film transistor T3, and the emission control drain electrode D6 of the emission control thin film transistor T6 is the second initialization thin film transistor T7. It is electrically connected to the second initialization source electrode S7 and the pixel electrode of the organic light emitting diode OLED.

The operation control thin film transistor T5 and the light emission control thin film transistor T6 are simultaneously turned on according to the light emission control signal En received through the light emission control line EL, and the driving voltage ELVDD is applied to the organic light emitting device ( OLED) to allow the driving current IOLED to flow through the organic light emitting diode (OLED).

The second initialization gate electrode G7 of the second initialization thin film transistor T7 is connected to the previous scan line SL-1, and the second initialization source electrode S7 of the second initialization thin film transistor T7 emits light. It is connected to the emission control drain electrode D6 of the control thin film transistor T6 and the pixel electrode of the organic light emitting device OLED, and the second initialization drain electrode D7 of the second initialization thin film transistor T7 is first initialized. It is connected to the first initialization source electrode S4 and the initialization voltage line VL of the thin film transistor T4. The second initialization thin film transistor T7 is turned on according to the previous scan signal Sn-1 received through the previous scan line SL-1 to initialize the pixel electrode of the organic light emitting diode OLED.

5 illustrates a case in which the first initialization thin film transistor T4 and the second initialization thin film transistor T7 are connected to the previous scan line SL-1, but the present invention is not limited thereto. As another embodiment, the first initialization thin film transistor T4 is connected to the previous scan line SL-1 and drives according to the previous scan signal Sn-1, and the second initialization thin film transistor T7 is a separate signal line It may be connected to (eg, a scan line later) and driven according to a signal transmitted to the signal line.

The upper electrode CE2 of the storage capacitor Cst is connected to the driving voltage line PL, and the opposite electrode of the organic light emitting diode OLED is connected to the common voltage ELVSS. Accordingly, the organic light emitting diode OLED receives the driving current IOLED from the driving thin film transistor T1 and emits light to display an image.

In FIG. 5, the compensation thin film transistor T3 and the first initialization thin film transistor T4 are shown as having a dual gate electrode, but the compensation thin film transistor T3 and the first initialization thin film transistor T4 have one gate electrode. can have

6 is a layout diagram schematically illustrating a pixel circuit of a pixel according to an exemplary embodiment of the present invention. 7 is a cross-sectional view taken along lines I-I' and II-II' of FIG. 6 .

6 and 7, the driving thin film transistor (T1), the switching thin film transistor (T2), the compensation thin film transistor (T3), the first initialization thin film transistor (T4), the operation control thin film transistor (T5), the light emission control thin film The transistor T6 and the second initialization thin film transistor T7 are disposed along the semiconductor layer 1130 .

The semiconductor layer 1130 is disposed on a substrate on which a buffer layer, which is an inorganic insulating material, is formed. In this embodiment, the semiconductor layer 1130 may include low temperature poly-silicon (LTPS). The polysilicon material has high electron mobility (100 cm 2 /Vs or more), low energy consumption, and excellent reliability, so it can be used as a semiconductor layer of a thin film transistor in a display device. However, the present invention is not limited thereto, and in another embodiment, the semiconductor layer 1130 may be formed of amorphous silicon (a-Si) and/or an oxide semiconductor, and some semiconductor layers among the plurality of thin film transistors are It may be formed of low-temperature polysilicon (LTPS), and some other semiconductor layers may be formed of amorphous silicon (a-Si) and/or oxide semiconductor.

Some regions of the semiconductor layer 1130 include a driving thin film transistor T1, a switching thin film transistor T2, a compensation thin film transistor T3, a first initialization thin film transistor T4, an operation control thin film transistor T5, and a light emission control. It corresponds to the semiconductor layers of the thin film transistor T6 and the second initialization thin film transistor T7. In other words, the driving thin film transistor T1, the switching thin film transistor T2, the compensation thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the light emission control thin film transistor T6 and the second It can be understood that the semiconductor layers of the 2-initialized thin film transistor T7 are connected to each other and curved in various shapes.

The semiconductor layer 1130 includes a channel region and a source region and a drain region on both sides of the channel region, and the source region and the drain region may be understood as a source electrode and a drain electrode of a corresponding thin film transistor. Hereinafter, for convenience, the source region and the drain region are referred to as a source electrode and a drain electrode, respectively.

The driving thin film transistor T1 includes a driving gate electrode G1 overlapping the driving channel region, and a driving source electrode S1 and a driving drain electrode D1 on both sides of the driving channel region. The driving channel region overlapping the driving gate electrode G1 may have a bent shape such as an omega shape, thereby forming a long channel length in a narrow space. When the length of the driving channel region is long, the driving range of the gate voltage is widened, so that the gradation of light emitted from the organic light emitting diode (OLED) can be more precisely controlled and display quality can be improved.

The switching thin film transistor T2 includes a switching gate electrode G2 overlapping the switching channel region, and a switching source electrode S2 and a switching drain electrode D2 on both sides of the switching channel region. The switching drain electrode D2 may be connected to the driving source electrode S1 .

The compensation thin film transistor T3 is a dual thin film transistor, and may include compensation gate electrodes G3 overlapping two compensation channel regions, and a compensation source electrode S3 and a compensation drain electrode D3 disposed on both sides. may include. The compensation thin film transistor T3 may be connected to the driving gate electrode G1 of the driving thin film transistor T1 through a node connection line 1174 to be described later.

The first initialization thin film transistor T4 is a dual thin film transistor, and includes a first initialization gate electrode G4 overlapping two first initialization channel regions, and a first initialization source electrode S4 and a first initialization source electrode S4 disposed on both sides. One initialization drain electrode D4 may be included.

The operation control thin film transistor T5 may include an operation control gate electrode G5 overlapping the operation control channel region, and an operation control source electrode S4 and an operation control drain electrode D5 located on both sides. The operation control drain electrode D5 may be connected to the driving source electrode S1 .

The emission control thin film transistor T6 may include an emission control gate electrode G6 overlapping the emission control channel region, and a emission control source electrode S6 and emission control drain electrode D6 positioned on both sides. The emission control source electrode S6 may be connected to the driving drain electrode D1.

The second initialization thin film transistor T7 includes a second initialization gate electrode G7 overlapping the second initialization channel region, and a second initialization source electrode S7 and a second initialization drain electrode D7 positioned on both sides. can do.

The above-described thin film transistors may be connected to the signal lines SL, SL-1, EL, and DL, the initialization voltage line VL, and the driving voltage line PL.

A scan line SL, a previous scan line SL-1, a light emission control line EL, and a driving gate electrode G1 may be disposed on the above-described semiconductor layer 1130 with the insulating layer(s) interposed therebetween. .

The scan line SL may extend in the first direction DR1 . One region of the scan line SL may correspond to the switching and compensation gate electrodes G2 and G3. For example, a region of the scan line SL that overlaps the channel regions of the switching and compensation thin film transistors T2 and T3 may be the switching and compensation gate electrodes G2 and G3, respectively.

The previous scan line SL-1 extends along the first direction DR1, and some regions may correspond to the first and second initialization gate electrodes G4 and G7, respectively. For example, a region overlapping the channel regions of the first and second initialization driving thin film transistors T4 and T7 of the previous scan line SL-1 may be the first and second initialization gate electrodes G4 and G7, respectively. have.

The light emission control line EL extends in the first direction DR1 . One region of the emission control line EL may correspond to the operation control and emission control gate electrodes G5 and G6, respectively. For example, a region of the emission control line EL overlapping the channel regions of the operation control and emission control driving thin film transistors T6 and T7 may be the operation control and emission control gate electrodes G5 and G6, respectively.

The driving gate electrode G1 is a floating electrode and may be connected to the compensation thin film transistor T3 through the node connection line 1174 described above.

The electrode voltage line HL is disposed on the aforementioned scan line SL, the previous scan line SL-1, the emission control line EL, and the driving gate electrode G1 with the insulating layer(s) interposed therebetween. can be

The electrode voltage line HL may extend along the first direction DR1 to cross the data line DL and the driving voltage line PL. A portion of the electrode voltage line HL may cover at least a portion of the driving gate electrode G1 , and a storage capacitor Cst may be formed together with the driving gate electrode G1 . For example, the driving gate electrode G1 may be the lower electrode CE1 of the storage capacitor Cst, and a portion of the electrode voltage line HL may be the upper electrode CE2 of the storage capacitor Cst.

The upper electrode CE2 of the storage capacitor Cst is electrically connected to the driving voltage line PL. In this regard, the electrode voltage line HL may be connected to the driving voltage line PL disposed on the electrode voltage line HL through the contact hole CNT. Accordingly, the electrode voltage line HL may have the same voltage level (constant voltage) as the driving voltage line PL. For example, the electrode voltage line HL may have a constant voltage of +5V. The electrode voltage line HL may be understood as a transverse driving voltage line.

The driving voltage line PL extends along the second direction DR2 , and the electrode voltage line HL electrically connected to the driving voltage line PL is connected to the first direction DR1 crossing the second direction DR2 . , so that the plurality of driving voltage lines PL and electrode voltage lines HL may form a mesh structure in the display area.

A data line DL, a driving voltage line PL, an initialization connection line 1173 , and a node connection line 1174 may be disposed on the electrode voltage line HL with the insulating layer(s) interposed therebetween.

The data line DL extends in the second direction DR2 and may be connected to the switching source electrode S2 of the switching thin film transistor T2 through the contact hole 1154 . A part of the data line DL may be understood as a switching source electrode.

The driving voltage line PL extends in the second direction DR2 and is connected to the electrode voltage line HL through the contact hole CNT as described above. In addition, it may be connected to the operation control thin film transistor T5 through the contact hole 1155 . The driving voltage line PL may be connected to the operation control drain electrode D5 through the contact hole 1155 .

One end of the initialization connection line 1173 is connected to the first and second initialization thin film transistors T4 and T7 through a contact hole 1152 , and the other end is connected to an initialization voltage line VL to be described later through a contact hole 1151 , and can be connected

One end of the node connection line 1174 may be connected to the compensation drain electrode D3 through the contact hole 1156 , and the other end may be connected to the driving gate electrode G1 through the contact hole 1157 .

An initialization voltage line VL may be disposed on the data line DL, the driving voltage line PL, the initialization connection line 1173 , and the node connection line 1174 with the insulating layer(s) interposed therebetween.

The initialization voltage line VL extends in the first direction DR1 . The initialization voltage line VL may be connected to the first and second initialization driving thin film transistors T4 and T7 through the initialization connection line 1173 . The initialization voltage line VL may have a constant voltage (eg, -2V, etc.).

The initialization voltage line VL is disposed on the same layer as the pixel electrode 210 of the organic light emitting diode OLED (FIG. 7) and may include the same material. The pixel electrode 210 may be connected to the emission control thin film transistor T6 . The pixel electrode 210 may be connected to the connection metal 1175 through the contact hole 1163 , and the connection metal 1175 may be connected to the emission control drain electrode D6 through the contact hole 1153 .

Although it has been described in FIG. 6 that the initialization voltage line VL is disposed on the same layer as the pixel electrode 210 , in another embodiment, the initialization voltage line VL may be disposed on the same layer as the electrode voltage line HL. can

Hereinafter, a stacked structure of components included in a display panel according to an exemplary embodiment of the present invention will be described with reference to FIG. 7 .

The substrate 100 may include glass or a polymer resin. Polymer resins include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethyeleneterepthalate, polyphenylene sulfide, polya It may include a polymer resin such as polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The substrate 100 including the polymer resin may have flexible, rollable, or bendable properties. The substrate 100 may have a multilayer structure including a layer including the above-described polymer resin and an inorganic layer (not shown).

The buffer layer 111 may be disposed on the substrate 100 to reduce or block penetration of foreign substances, moisture, or external air from the lower portion of the substrate 100 , and may provide a flat surface on the substrate 100 . The buffer layer 111 may include an inorganic material such as an oxide or nitride, an organic material, or an organic/inorganic composite, and may have a single-layer or multi-layer structure of an inorganic material and an organic material. A barrier layer (not shown) that blocks the penetration of external air may be further included between the substrate 100 and the buffer layer 111 .

Gate electrodes G1 and G6 are disposed on the semiconductor layers A1 and A6 with the first gate insulating layer 112 interposed therebetween. The gate electrodes G1 and G6 include molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and the like, and may be formed of a single layer or multiple layers. For example, the gate electrodes G1 and G6 may be a single layer of Mo. The scan line SL (refer to FIG. 6 ), the previous scan line SL-1, and the emission control line EL may be formed on the same layer as the gate electrodes G1 and G6. That is, the gate electrodes G1 and G6, the scan line SL (refer to FIG. 6 ), the previous scan line SL-1, and the emission control line EL may be disposed on the first gate insulating layer 112 . have.

The first gate insulating layer 112 is silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta _{2 )} O ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO ₂ ) and the like.

A second gate insulating layer 113 may be provided to cover the gate electrodes G1 and G6 . The second gate insulating layer 113 is silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta _{2 )} O ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO ₂ ) It may include.

The lower electrode CE1 of the storage capacitor Cst may be integrally formed with the driving gate electrode G1 of the driving thin film transistor T1. For example, the driving gate electrode G1 of the driving thin film transistor T1 may function as the lower electrode CE1 of the storage capacitor Cst.

The upper electrode CE2 of the storage capacitor Cst overlaps the lower electrode CE1 with the second gate insulating layer 113 interposed therebetween. In this case, the second gate insulating layer 113 may function as a dielectric layer of the storage capacitor Cst. The upper electrode CE2 may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and the like, and may be formed as a multilayer or single layer including the above material. have. For example, the upper electrode CE2 may be a single layer of Mo or a multilayer of Mo/Al/Mo.

In the drawings, the storage capacitor Cst is illustrated as overlapping the driving thin film transistor T1, but the present invention is not limited thereto. The storage capacitor Cst may be variously modified, such as being disposed so as not to overlap the driving thin film transistor T1 .

The upper electrode CE2 may function as an electrode voltage line HL. For example, a portion of the electrode voltage line HL may be the upper electrode CE2 of the storage capacitor Cst.

An interlayer insulating layer 115 may be provided to cover the upper electrode CE2 . The interlayer insulating layer 115 is silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O _{5 )} ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO ₂ ) and the like. Although the interlayer insulating layer 115 is illustrated as a single layer in FIG. 7 , the interlayer insulating layer 115 may be formed in a multilayer structure in an embodiment.

A data line DL, a driving voltage line PL, and a connection metal 1175 may be disposed on the interlayer insulating layer 115 . The data line DL, the driving voltage line PL, and the connection metal 1175 may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like. , may be formed as a multi-layer or a single layer including the above materials. For example, the data line DL, the driving voltage line PL, and the connection metal 1175 may have a multilayer structure of Ti/Al/Ti.

The upper electrode CE2 of the storage capacitor Cst may be connected to the driving voltage line PL through a contact hole CNT defined in the interlayer insulating layer 115 . This may mean that the electrode voltage line HL is connected to the driving voltage line PL through the contact hole CNT. Accordingly, the electrode voltage line HL may have the same voltage level (constant voltage) as the driving voltage line PL.

The connection metal 1175 is a semiconductor layer of the light emission control thin film transistor T6 through a contact hole 1153 penetrating the interlayer insulating layer 115 , the second gate insulating layer 113 , and the first gate insulating layer 112 . (A6) is connected. The light emission control thin film transistor T6 may be electrically connected to the pixel electrode 210 of the organic light emitting diode (OLED) through the connection metal 1175 .

A planarization layer 117 may be positioned on the data line DL, the driving voltage line PL, and the connection metal 1175 , and an organic light emitting diode OLED may be positioned on the planarization layer 117 .

The planarization layer 117 may have a flat top surface so that the pixel electrode 210 can be formed flat. The planarization layer 117 may be formed as a single layer or a multilayer film made of an organic material. The planarization layer 117 is a general general-purpose polymer such as Benzocyclobutene (BCB), polyimide, HMDSO (Hexamethyldisiloxane), Polymethylmethacrylate (PXMMA), or Polystylene (PS), a polymer derivative having a phenolic group, and an acrylic polymer , imide-based polymers, aryl ether-based polymers, amide-based polymers, fluorine-based polymers, p-xylene-based polymers, vinyl alcohol-based polymers, and blends thereof. The planarization layer 117 may include an inorganic material. The planarization layer 117 is silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O) ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZnO ₂ ) and the like. When the planarization layer 117 is made of an inorganic material, chemical planarization polishing may be performed in some cases. Meanwhile, the planarization layer 117 may include both an organic material and an inorganic material.

The pixel electrode 210 may be a (semi)transmissive electrode or a reflective electrode. In some embodiments, the pixel electrode 210 includes a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compound thereof, and a transparent or translucent electrode layer formed on the reflective film. can do. The transparent or translucent electrode layer includes indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3; indium oxide), and indium gallium oxide (IGO). at least one selected from the group consisting of indium gallium oxide) and aluminum zinc oxide (AZO). In some embodiments, the pixel electrode 210 may be provided in a stacked structure of ITO/Ag/ITO.

A pixel defining layer 119 may be disposed on the planarization layer 117 , and the pixel defining layer 119 has an opening 119OP through which the central portion of the pixel electrode 210 is exposed, thereby defining a light emitting area of the pixel. can play a role In addition, the pixel defining layer 119 increases the distance between the edge of the pixel electrode 210 and the counter electrode 230 on the pixel electrode 210 to prevent arcs from occurring at the edge of the pixel electrode 210 . may play a role in preventing The pixel defining layer 119 is made of an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, hexamethyldisiloxane (HMDSO), and phenol resin, and may be formed by spin coating or the like.

The intermediate layer 220 of the organic light emitting diode (OLED) may include an organic light emitting layer. The organic light emitting layer may include an organic material including a fluorescent or phosphorescent material emitting red, green, blue, or white light. The organic light emitting layer may be a low molecular weight organic material or a high molecular weight organic material, and below and above the organic light emitting layer, a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and A functional layer such as an electron injection layer (EIL) may be optionally further disposed. The intermediate layer 220 may be disposed to correspond to each of the plurality of pixel electrodes 210 . However, the present invention is not limited thereto. Various modifications are possible for the intermediate layer 220 to include an integral layer over the plurality of pixel electrodes 210 .

The sizes of the intermediate layers 220 emitting light of the same color may be different from each other in the first display area DA1 and the second display area DA2 . For example, a planar area of at least one of the intermediate layers 220 of the main pixel PXm may be different from a planar area of at least one of the intermediate layers 220 of the sub-pixel PXa. In particular, a planar area of at least one of the intermediate layers 220 of the main pixel PXm may be smaller than a planar area of at least one of the intermediate layers 220 of the sub-pixel PXa. For example, the planar area of the hole injection layer among the intermediate layers 220 of the main pixel PXm may be smaller than the planar area of the hole injection layer among the intermediate layers 220 of the sub-pixel PXa. As another embodiment, the area on the plane of the organic light emitting layer among the intermediate layers 220 of the main pixel PXm may be smaller than the area on the plane of the organic light emitting layers among the intermediate layers 220 of the auxiliary pixel PXa. As another embodiment, the planar area of the hole injection layer and the organic emission layer among the intermediate layer 220 of the main pixel PXm may be smaller than the area on the plane of the hole injection layer and the organic emission layer among the intermediate layer 220 of the auxiliary pixel PXa. can In this case, the above relation is not limited to the above, and may be applied to a pixel electrode, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

Also, the thickness of the intermediate layer 220 of the main pixel PXm and the thickness of the intermediate layer 220 of the auxiliary pixel PXa may have a uniform portion and a variable section, respectively. For example, the thickness of the intermediate layer 220 disposed on the pixel electrode 210 of each pixel is constant, and the thickness of the intermediate layer 220 disposed on the inner surface of the opening 119OP of the pixel defining layer 119 is constant. may not In this case, the thickness of the intermediate layer 220 disposed on the inner surface of the opening 119OP of the pixel defining layer 119 may decrease as it moves away from the pixel electrode 210 . In another embodiment, the thickness of the intermediate layer 220 disposed on some of the pixel electrodes 210 of each pixel is constant, and the thickness of the intermediate layer 220 is constant from the end (or edge) of the portion to the end of the intermediate layer 220 . It is also possible that the thickness of the intermediate layer 220 is gradually reduced. In this case, the thickness of the intermediate layer 220 is perpendicular to the surface of the intermediate layer 220 in contact with the counter electrode 230 from the surface of the pixel electrode 210 or the pixel defining layer 119 in direct contact with the intermediate layer 220 . direction can be measured. Hereinafter, for convenience of explanation, a case in which the section in which the thickness of the intermediate layer 220 varies is disposed only on the inner surface of the opening of the pixel defining layer 119 will be described in detail.

In the above case, the thickness of the intermediate layer 220 of the portion of the intermediate layer 220 of the main pixel PXm having a constant thickness is the same as the thickness of the intermediate layer 220 of the portion of the intermediate layer 220 of the auxiliary pixel PXa having a constant thickness. may be the same. In addition, the first length LXm of the section in which the thickness of the intermediate layer 220 of the main pixel PXm varies is the second length LXa of the section in which the thickness of the intermediate layer 220 of the sub-pixel PXa is variable. may be different. For example, one of the first length LXm and the second length LXa may be greater than the first length LXm or the second length LXa. Specifically, the first length LXm may be greater than the second length LXa or the second length LXa may be greater than the first length LXm. In this case, when the resolution of the second display area DA2 is greater than the resolution of the first display area DA1 , the first length LXm may be greater than the second length LXa. As another embodiment, when the resolution of the second display area DA2 is smaller than the resolution of the first display area DA1 , the first length LXm may be smaller than the second length LXa.

In this case, since the section in which the thickness of the intermediate layer 220 of each pixel varies is shortened, it is possible to realize a clear image in at least one of the first display area DA1 and the second display area DA2 . In particular, when the second length LXa is shorter than the first length LXm, it is possible to secure the transmission area TA as much as possible. performance degradation can be prevented. Hereinafter, for convenience of description, a case in which the second length LXa is shorter than the first length LXm will be described in detail.

The counter electrode 230 may be a light-transmitting electrode or a reflective electrode. In some embodiments, the counter electrode 230 may be a transparent or translucent electrode, and is formed of a metal thin film having a small work function including Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, and compounds thereof. can be formed. In addition, a transparent conductive oxide (TCO) layer such as ITO, IZO, ZnO, or In ₂ O _{3 may be further disposed on the metal thin film.}

When the pixel electrode 210 is provided as a reflective electrode and the counter electrode 230 is a light-transmitting electrode, light emitted from the intermediate layer 220 is emitted toward the counter electrode 230 , so that the display device is a front emission type. can be When the pixel electrode 210 is composed of a transparent or semi-transparent electrode and the counter electrode 230 is composed of a reflective electrode, the light emitted from the intermediate layer 220 is emitted toward the substrate 100 and the display device is a bottom emission type. this can be However, the present embodiment is not limited thereto. The display device of the present embodiment may be a double-sided emission type that emits light in both front and rear directions.

In the present exemplary embodiment, the counter electrode 230 may be disposed over the entire surface of the second display area DA2 , and a portion of the edge may be located in the peripheral area PA. The counter electrode 230 is integrally formed in the main pixels PXm positioned on the second display area DA2 , that is, a plurality of organic light emitting diodes (OLEDs), and is connected to the plurality of pixel electrodes 210 . can respond.

Meanwhile, the counter electrode 230 is also provided in the auxiliary pixels PXa positioned on the first display area DA1. However, since the first display area DA1 includes the transmissive area TA positioned between the sub-pixels PXa, a portion of the counter electrode 230 may not be provided in a partial area corresponding to the transmissive area TA. can Of course, in the case of a front emission type display device, light may be emitted toward the counter electrode 230 , but transmittance may be partially reduced by the counter electrode 230 . Accordingly, by not including the counter electrode 230 in the area corresponding to the transmission area TA, the transmittance of the transmission area TA may be improved. In this case, the opposing electrodes 230 disposed to be spaced apart from each other in the first display area DA1 may be connected by a separate bridge or by overlapping at least a portion of the opposing electrodes 230 adjacent to each other. The main pixel PXm and the auxiliary pixel PXa as described above may include the pixel electrode 210 , the intermediate layer 220 , and the counter electrode 230 described above, respectively. At this time, although not shown in the drawings, the auxiliary pixel PXa includes a first pixel electrode (not shown), a first intermediate layer (not shown), and a first counter electrode (not shown), and the main pixel PXm is a second pixel electrode. (not marked), a second intermediate layer (not marked), and a second counter electrode (not marked) may be included.

8 is a cross-sectional view illustrating an apparatus for manufacturing a display device according to an exemplary embodiment. 9 is a perspective view illustrating the mask assembly shown in FIG. 8 .

8 and 9 , the display device DD may be manufactured by the display device manufacturing device 1 .

The display device manufacturing apparatus 1 includes a chamber 10 , a mask assembly 20 , a first support part 30 , a second support part 40 , a deposition source 50 , a magnetic force generator 60 , and a vision part ( 70) and a pressure control unit 80 may be included.

The chamber 10 may have a space formed therein, and a part of the chamber 10 may be formed to be opened. At this time, the gate valve 11 may be disposed in the opened portion of the chamber 10 to be able to open and close.

The mask assembly 20 may be selectively disposed inside the chamber 10 . In this case, the mask assembly 20 may include a mask frame 21 and a mask sheet 22 . The mask sheet 22 may be fixed to the mask frame 21 in a tensioned state. The mask sheet 22 may include at least one first pattern hole PH1 and at least one second pattern hole PH2 . The first pattern hole PH1 and the second pattern hole PH2 may be through holes formed to allow the deposition material to pass through the mask sheet 22 .

The mask assembly 20 may include a mask frame 21 and a mask sheet 22 . The mask frame 21 is formed by connecting a plurality of frames to each other, and may include an opening therein. In this case, the mask frame 21 may include one opening or a plurality of openings that are separated from each other. In this case, the mask frame 21 may be formed in a grid shape, such as a window frame.

The mask sheet 22 may be fixed to the mask frame 21 in a tensioned state. One or a plurality of mask sheets 22 may be provided. When one mask sheet 22 is provided, the mask sheet 22 may be disposed on the mask frame 21 to shield the opening of the mask frame 21 . In another embodiment, when a plurality of mask sheets 22 are provided, the plurality of mask sheets 22 are disposed to be adjacent to each other along one side of the mask frame 21 (eg, in the X direction or the Y direction) to provide a mask. It is also possible to shield the opening of the frame 21 . Hereinafter, for convenience of explanation, a case in which a plurality of mask sheets 22 are provided will be described in detail.

The mask assembly 20 may further include a support frame 23 supporting the mask sheet 22 . The mask sheet 22 may be disposed on the support frame 23 . The support frame 23 may be disposed in the opening of the mask frame 21 and may be provided in plurality. The support frame 23 may be arranged to be spaced apart from each other in a direction parallel or perpendicular to a longitudinal direction (eg, Y direction) of the mask sheet 22 .

The first support part 30 may seat the substrate 100 . In this case, the first support part 30 may adjust the position of the substrate 100 . For example, the first support unit 30 may include a UVW stage.

The second support part 40 may seat the mask assembly 20 . In this case, the second support part 40 may adjust the position of the mask assembly 20 similarly to the first support part 30 .

At least one of the first support part 30 and the second support part 40 may be raised and/or lowered inside the chamber 10 . In this case, at least one of the first support part 30 and the second support part 40 may adjust the distance between the substrate 100 and the mask frame 21 .

The deposition source 50 may supply the deposition material to the chamber 10 by vaporizing or sublimating the deposition material after the deposition material is accommodated. In this case, the deposition source 50 may include a heater therein, and the deposition material may be melted or sublimated by heating the deposition material inside the deposition source 50 by the operation of the heater. In this case, the deposition source 50 may be disposed at the center or corner of the chamber 10 .

The magnetic force generator 60 may be disposed in the chamber 10 to bring the substrate 100 and the mask assembly 20 into close contact. In this case, the magnetic force generating unit 60 may include an electromagnet or a permanent magnet for generating a magnetic force.

The vision unit 70 may be disposed in the chamber 10 to photograph the positions of the mask assembly 20 and the substrate 100 . In this case, the vision unit 70 may photograph an alignment mark of at least one of the mask assembly 20 and the substrate 100 .

The pressure adjusting unit 80 may be connected to the chamber 10 to adjust the pressure inside the chamber 10 . In this case, the pressure control unit 80 may include a connection pipe 81 connected to the chamber 10 and a pump 82 disposed in the connection pipe 81 .

Looking at the operation of the apparatus 1 for manufacturing the display device as described above, the pressure adjusting unit 80 opens the gate valve 11 while maintaining the atmospheric pressure in the chamber 10 equal to or similar to atmospheric pressure to open the substrate. 100 and the mask assembly 20 may be inserted into the chamber 10 . In this case, at least one of the substrate 100 and the mask assembly 20 may move through a separate robot arm disposed outside the chamber 10 or a shuttle inserted into or withdrawn from the chamber 10 . In this case, the substrate 100 may have, for example, each layer disposed under the pixel defining layer 119 as shown in FIG. 7 , the pixel defining layer 119 and the pixel electrode 210 formed thereon.

After disposing the mask frame 21 and the substrate 100 on the second support part 40 and the first support part 30, respectively, the positions of the mask frame 21 and the substrate 100 are sensed by the vision part 70, can be sorted. Thereafter, after the substrate 100 and the mask frame 21 are brought into close contact with each other, the mask frame 21 and the substrate 100 may be brought into close contact with each other by the magnetic force generating unit 60 .

When the deposition material is released from the deposition source 50 , the deposition material is deposited on the substrate 100 through the first pattern hole PH1 and the second pattern hole PH2 of the mask sheet 22 to form a pattern. have. At this time, the deposition material is deposited on the substrate 100, for example, at least one of the intermediate layer 220 (FIG. 7) or the intermediate layer 220 (FIG. 7) (for example, at least one of the organic light emitting layer and the functional layer) can form.

When the above process is completed, another layer may be formed on the substrate 100 by taking the substrate 100 out of the chamber 10 or moving it to another place in the chamber 10 .

The above operations can be performed individually in the various layers. For example, a pixel electrode is formed through the mask assembly 20 as described above, and the substrate 100 is transferred to another display device manufacturing apparatus to form at least one of a hole transport layer and a hole injection layer among functional layers on the pixel electrode. can form. The substrate 100 is transferred to another display device manufacturing device to form an organic light emitting layer on the functional layer, and the substrate 100 is transferred to another display device manufacturing device to form a hole transport layer and electrons among functional layers on the organic light emitting layer. An injection layer may be formed. In this case, the organic light emitting layer may be formed on the substrate 100 using different mask assemblies in a separate display device manufacturing apparatus for each organic light emitting layer implementing different colors.

When the above process is completed, the counter electrode and the thin film encapsulation layer may be sequentially formed on the functional layer in another display device manufacturing apparatus.

In this case, at least one of the pixel electrode, the functional layer, and the organic light emitting layer may be formed on the substrate 100 in the same or similar apparatus for manufacturing the display device 1 illustrated in FIG. 9 .

10A and 10B are plan views schematically illustrating a part of a mask sheet and a support frame of a mask assembly according to an embodiment of the present invention.

First, referring to FIG. 10A , a portion of the mask sheet 22 may overlap the support frame 23 . In the support frame 23 , a pattern hole located in a region overlapping with the support frame 23 among the pattern holes of the mask sheet 22 may be shielded by the support frame 23 . That is, the deposition material cannot pass through the pattern hole located in the region where the support frame 23 and the mask sheet 22 overlap. Accordingly, a region between the support frames 23 spaced apart from each other may be defined as a deposition region A. As shown in FIG. The deposition area A may have, for example, a shape such as a rectangle or a square, as well as a polygon such as a triangle, an ellipse, or a circle, depending on the shape and arrangement of the support frame 23 . The deposition area A may include a first area A1 and a second area A2 surrounded on at least one side by the first area A1 on a plane. Although FIG. 10A illustrates that there is one second area A2, the present invention is not limited thereto, and two or more second areas A2 may be included.

The mask sheet 22 may include a first pattern hole PH1 and a second pattern hole PH2 through which the deposition material passes. The first pattern hole PH1 and the second pattern hole PH2 may be holes penetrating in the thickness direction of the mask sheet 22 . The first pattern hole PH1 may be disposed in the first area A1 of the deposition area A, and the second pattern hole PH2 may be disposed in the second area A2 of the deposition area A.

Each shape of the first pattern hole PH1 and the second pattern hole PH2 may be a rectangle or a square, and may have various shapes such as a polygon such as a triangle, a circle, and an oval. Here, the shape of the first pattern hole PH1 and the second pattern hole PH2 may be, for example, a shape on a plane parallel to one surface of the mask sheet 22 facing the deposition source 50 . In FIG. 3 , the first pattern hole PH1 and the second pattern hole PH2 both have a rectangular shape, but are not limited thereto. The shapes of the first pattern hole PH1 and the second pattern hole PH2 may be different from each other.

Also, the areas of the first pattern hole PH1 and the second pattern hole PH2 may be different from each other. Here, the area of the first pattern hole PH1 and the second pattern hole PH2 may be the size of the shape of the first pattern hole PH1 and the second pattern hole PH2 on the plane. For example, the size of the shape of the first pattern hole PH1 may be smaller than the size of the shape of the second pattern hole PH2 on a plane. Although FIG. 10A shows that the shapes of the first pattern hole PH1 and the second pattern hole PH2 have the same size, the present invention is not limited thereto.

The number (ie, density) per same area of the first pattern hole PH1 and the second pattern hole PH2 may be different from each other. In an embodiment, the number of first pattern holes PH1 per same area may be greater than the number of second pattern holes PH2 per same area. Accordingly, between the first display area DA1 and the second display area DA2 of the display device DD corresponding to the first area A1 and the second area A2 of the mask sheet 22 , respectively The display device DD may be manufactured to have different resolutions. Although FIG. 10A illustrates that four second pattern holes PH2 are disposed in the second area A2, this is exemplary and is not limited thereto.

Meanwhile, thicknesses in the first area A1 and the second area A2 of the mask sheet 22 may be different from each other. For example, the thickness in the second area A2 may be smaller than the thickness in the first area A1, and the thickness in the second area A2 is 50% of the thickness in the first area A1; or 40%, or 30%, or 20% or less. In this regard, it will be described later in detail with reference to FIG. 16F.

Referring to FIG. 10B , a reference hole RH may be additionally disposed in the second area A2 of the mask sheet 22 . The reference hole RH may be a through hole. At least two reference holes RH may be disposed at the edge of the second area A2 . For example, when the second area A2 has a rectangular shape, two reference holes RH adjacent to two corners diagonally opposite to each other among the four corners of the second area A2 may be disposed, Alternatively, as shown in FIG. 10B , four reference holes RH adjacent to each of the four corners of the second area A2 may be disposed. In addition, when the second area A2 has a circular shape, at least two reference holes RH may be disposed at an edge thereof along the circumference.

The reference holes RH may be used to align the material (base material) of the mask sheet 22 in a processing step using a laser beam as described in detail with reference to FIG. 19 . Through this, a precise pattern hole can be formed by irradiating a laser beam to an exact position on the material of the mask sheet 22 .

11A is a plan view illustrating an arrangement of pixels of a display device according to an exemplary embodiment.

Referring to FIG. 11A , the sub-pixel PXa disposed in the first display area DA1 may include a first sub-pixel PXa1 , a second sub-pixel PXa2 , and a third sub-pixel PXa3 . . In this case, each of the first sub-pixel PXa1 , the second sub-pixel PXa2 , and the third sub-pixel PXa3 may emit different colors. In addition, the first sub-pixel PXa1 , the second sub-pixel PXa2 , and the third sub-pixel PXa3 may have the same shape and planar area as or different from each other.

The main pixel PXm disposed in the second display area DA2 may include a first main pixel PXm1 , a second main pixel PXm2 , and a third main pixel PXm3 . In this case, each of the first main pixel PXm1 , the second main pixel PXm2 , and the third main pixel PXm3 may emit different colors, and have the same shape and planar area as each other or different from each other. can be

The first main pixel PXm1, the second main pixel PXm2, and the third main pixel PXm3 are the same as the first sub-pixel PXa1, the second sub-pixel PXa2, and the third sub-pixel PXa3, respectively. It can emit color.

The sub-pixel PXa and the main pixel PXm as described above may have various shapes. For example, the main pixel PXm may be arranged in an S-stripe type. In this case, in the S-stripe type, one of the first main pixel PXm1, the second main pixel PXm2, and the third main pixel PXm3 has a rectangular shape, and the first main pixel PXm1 and the second main pixel (PXm3) have a rectangular shape. The other two of PXm2) and the third main pixel PXm3 may have a square shape. In this case, the remaining two of the first main pixel PXm1, the second main pixel PXm2, and the third main pixel PXm3 shown in FIG. 11 are the first main pixel PXm1 and the second main pixel PXm2. and the third main pixel PXm3.

The sub-pixel PXa may be disposed in a pentile type having a diamond structure. In this case, the first sub-pixel PXa1, the second sub-pixel PXa2, and the third sub-pixel PXa3 are selected from among the first sub-pixel PXa1, the second sub-pixel PXa2, and the third sub-pixel PXa3. The other two of the first sub-pixel PXa1 , the second sub-pixel PXa2 , and the third sub-pixel PXa3 may be radially arranged based on one.

In this case, the resolution of the first display area DA1 may be smaller than the resolution of the second display area DA2.

For example, according to an embodiment, the area on the plane of the sub-pixel PXa emitting the same color and the area on the plane of the main pixel PXm may be different from each other. For example, the area on the plane of the sub-pixels PXa emitting the same color may be less than the area on the plane of the main pixel PXm.

As another embodiment, the distance between the centers of the main pixels PXm adjacent to each other while emitting the same color may be smaller than the distance between the centers of the sub-pixels PXa adjacent to each other while emitting the same color.

In another embodiment, the unit area of the first display area DA1 (eg, 1 cm ² of the first display area DA1 ) or the number of the arranged sub-pixels PXa is the same as that of the second display area DA2. It may be smaller than the number of main pixels PXm disposed in a unit area (eg, 1 cm ^{2 of the second display area DA2 ).} Alternatively, the number of auxiliary pixels PXa disposed in each of the first display area DA1 and the second display area DA2 in the same area may be smaller than the number of the main pixels PXm. In this case, the number of pixels may be the number of pixels emitting the same color.

11B is a plan view illustrating a part of a first mask sheet used in manufacturing the first main pixel and the first auxiliary pixel illustrated in FIG. 11A .

Referring to FIGS. 11A and 11B , the pixels of the display device DD manufactured using the first pattern hole PH1 of the mask sheet 22 are arranged in an S-stripe type and have a second pattern. The pixels of the display device DD manufactured by using the hole PH2 may be arranged in a pentile type having a diamond structure.

One pattern hole may correspond to one pixel of the display device DD. For example, a deposition material deposited on the substrate through one pattern hole may form the intermediate layer 220 ( FIG. 7 ) of one pixel of the display device DD. Each pixel means a light emitting region emitting light of a different color, and each pixel may be, for example, one of a red (R) pixel, a green (G) pixel, and a blue (B) pixel.

When the first auxiliary pixel PXa1 and the first main pixel PXm1 are formed through the apparatus 1 for manufacturing the display device illustrated in FIG. 9 , the first mask sheet 22-1 may be used. In this case, a 1-1 pattern hole PH1-1 and a 2-1 pattern hole PH2-1 may be formed in the first mask sheet 22-1. The deposition material passing through the 1-1 pattern hole PH1-1 and the 2-1 pattern hole PH2-1 is deposited on the substrate 100, and the first main pixel PXm1 and the first auxiliary material are respectively deposited on the substrate 100 . A layer having a predetermined pattern, such as at least one of a source electrode, an organic light emitting layer, and a part of a functional layer, may be formed in the pixel PXa1 .

The 1-1 pattern hole PH1-1 and the 2-1 pattern hole PH2-1 as described above are formed to correspond to the size and shape of the first auxiliary pixel PXa1 and the first main pixel PXm1, respectively. can be formed. In this case, the 1-1 pattern hole PH1-1 and the 2-1 pattern hole PH2-1 have the first mask to correspond to the positions of the first auxiliary pixel PXa1 and the first main pixel PXm1, respectively. It may be disposed on the seat 22-1.

In this case, the relationship between the 1-1 pattern hole PH1-1 and the 2-1 pattern hole PH2-1 is the same as or similar to the relationship between the first auxiliary pixel PXa1 and the first main pixel PXm1. can do. For example, the number of the 1-1 pattern holes PH1-1 per the same area in the first area A1 of the first mask sheet 22-1 is the number of the first pattern holes PH1-1 of the first mask sheet 22-1. The number of the 2-1 pattern holes PH2-1 per the same area in the second area A2 may be greater than the number of the second-first pattern holes PH2-1. For example, the first area A1 and the second area A2 shown in FIG. 11B have the same area, and the first area A1 having the same area has 24 1-1 pattern holes PH1-1. 4 2-1 pattern holes PH2-1 may be disposed in the second area A2 having the same area. Through this, the display device DD having display areas having different resolutions may be manufactured. The number of the 1-1 pattern holes PH1-1 and the 2-1 pattern holes PH2-1 per the same area may vary according to the designed resolution. Meanwhile, an area in the second area A2 in which the 2-1 pattern hole PH2-1 is not disposed may correspond to the transmission area TA of the display device DD.

In the above case, the first interval W1 between the 1-1 pattern holes PH1-1 adjacent to each other is the second interval W2 between the 2-1 pattern holes PH2-1 adjacent to each other and may be different. In this case, the interval between the pattern holes may be defined as a distance between the center and the center of the pattern holes adjacent to each other, the distance between the edges of the pattern holes disposed adjacent to each other, and the edges disposed at the same position. However, hereinafter, the interval between the pattern holes will be described in detail as meaning the distance between the centers of the adjacent pattern holes.

In this case, the first interval W1 may be smaller than the second interval W2. Through this, the distance between the first main pixels PXm1 adjacent to each other formed in the display device DD may be smaller than the distance between the first sub-pixels PXa1 adjacent to each other.

In this case, the first sub-pixel PXa1 and the first main pixel PXm1 may emit one of red, green, and blue colors. Hereinafter, for convenience of description, the first sub-pixel PXa1 and the first main pixel PXm1 will be described in detail with a focus on the case of emitting red light.

11C is a plan view illustrating a part of a second mask sheet used in manufacturing the second main pixel and the second auxiliary pixel illustrated in FIG. 11A .

Referring to FIGS. 11A and 11C , when the second auxiliary pixel PXa2 and the second main pixel PXm2 are formed through the apparatus 1 for manufacturing the display device shown in FIG. 9 , the second mask sheet 22-2 ) can be used. In this case, a 1-2 pattern hole PH1-2 and a 2-2 pattern hole PH2-2 may be formed in the second mask sheet 22-2. The deposition material passing through the 1-2 pattern holes PH1-2 and the 2-2 pattern holes PH2-2 is deposited on the substrate 100, and the second main pixel PXm2 and the second auxiliary pixel, respectively, are deposited on the substrate 100 . A layer having a uniform pattern, such as at least one of a source electrode, an organic light emitting layer, and some of a functional layer, may be formed in the pixel PXa2 .

As described above, the first and second pattern holes PH1-2 and 2-2 pattern holes PH2-2 are formed to correspond to the sizes and shapes of the second auxiliary pixel PXa2 and the second main pixel PXm2, respectively. can be formed. In this case, the first-second pattern hole PH1-2 and the second-second pattern hole PH2-2 have a second mask to correspond to the positions of the second main pixel PXm2 and the second auxiliary pixel PXa2, respectively. It may be disposed on the seat 22-2. In this case, the relationship between the 1-2 pattern hole PH1-2 and the 2-2 pattern hole PH2-2 is the 1-1 pattern hole PH1-1 and the 2-1 pattern hole PH1-1 shown in FIG. 11B. The relationship with the pattern hole PH2-1 may be the same or similar to that of the pattern hole PH2-1. Also, the relationship between the second sub-pixel PXa2 and the second main pixel PXm2 may be the same as or similar to the relationship between the first sub-pixel Pxa1 and the first main pixel PXm1 described above.

In this case, the second sub-pixel PXa2 and the second main pixel PXm2 may emit one color among red, green, and blue. Hereinafter, for convenience of description, the second sub-pixel PXa2 and the second main pixel PXm2 will be described in detail focusing on the case of emitting green light.

11D is a plan view illustrating a part of a third mask sheet used in manufacturing the third main pixel and the third auxiliary pixel illustrated in FIG. 11A .

Referring to FIGS. 11A and 11D , when the third auxiliary pixel PXa3 and the third main pixel PXm3 are formed through the apparatus 1 for manufacturing the display device shown in FIG. 9 , the third mask sheet 22-3 ) can be used. In this case, 1-3 pattern holes PH1-3 and 2-3 pattern holes PH2-3 may be formed in the third mask sheet 22-3. The deposition material passing through the 1-3 pattern holes PH1-3 and the 2-3 pattern holes PH2-3 is deposited on the substrate 100, and the third main pixel PXm3 and the third auxiliary pixel, respectively, are deposited on the substrate 100 . A layer having a predetermined pattern, such as at least one of a source electrode, an organic light emitting layer, and a part of a functional layer, may be formed at a corresponding position of the pixel PXa3 .

The 1-3 pattern holes PH1-3 and 2-3 pattern holes PH2-3 as described above are formed to correspond to the sizes and shapes of the third main pixel PXm3 and the third sub-pixel PXa3, respectively. can be formed. At this time, the 1-3 pattern holes PH1-3 and the 2-3 pattern holes PH2-3 have a third mask to correspond to the positions of the third main pixel PXm3 and the third auxiliary pixel PXa3, respectively. It may be disposed on the seat 22-3. In this case, the shapes of the 1-3 pattern holes PH1-3 and the 2-3 pattern holes PH2-3 may be different from each other. In this case, the size of the 1-3 tile pattern hole PH1-3 may be smaller than the size of the 2-3 th pattern hole PH2-3. However, the number of 2-3 pattern holes PH2-3 per unit area and the distance between the 2-3 pattern holes PH2-3 adjacent to each other depend on the number of 1-3 pattern holes PH1-3 per unit area. and a distance between the first 1-3 pattern holes PH1-3 adjacent to each other. In this case, the relationship between the third sub-pixel Pxa3 and the third main pixel PXm3 is the relationship between the 2-3 pattern holes PH2-3 and the 1-3 pattern holes PH1-3 described above. may be the same as or similar to

In this case, the third sub-pixel PXa3 and the third main pixel PXm3 may emit one of red, green, and blue colors. Hereinafter, for convenience of explanation, the third sub-pixel PXa3 and the third main pixel PXm3 will be described in detail with a focus on the case of emitting blue light.

On the other hand, in addition to the above cases, when forming a pixel electrode or forming a layer in a pattern shape while entering all pixels of the functional layer in common, the mask sheet shown in FIGS. A mask sheet may be used. In the case of forming a layer common to all pixels by using one mask sheet, a mask sheet in which the first pattern hole and the second pattern hole are formed to correspond to all pixels as shown in FIG. 11A may be used. In this case, the pattern holes of FIGS. 11B to 11D may be arranged in one mask sheet so that they do not overlap each other.

12 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.

Referring to FIG. 12 , the main pixel PXm may have a hexagonal structure, and the auxiliary pixel PXa may have an S-star leaf structure. In this case, in the hexagonal structure, the first main pixel PXm1 , the second main pixel PXm2 , and the third main pixel PXm3 may have a hexagonal planar shape and may be arranged at regular intervals from each other. In addition, the first sub-pixel PXa1 , the second sub-pixel PXa2 , and the third sub-pixel PXa3 are the first main pixel PXm1 , the second main pixel PXm2 and the third main pixel shown in FIG. 11A . It may be arranged in the same shape as the pixel PXm3 . However, in this case, the distance between the first sub-pixels PXa1 adjacent to each other, the distance between the second sub-pixels PXa2 adjacent to each other, and the distance between the third sub-pixels PXa3 adjacent to each other are shown in FIG. 11A , respectively. The distance between the first main pixels PXm1 adjacent to each other, the distance between the second main pixels PXm2 adjacent to each other, and the distance between the third main pixels PXm3 adjacent to each other may be different.

Each of the sub-pixel PXa and the main pixel PXm as described above may be manufactured through a mask sheet having a shape similar to that shown in FIGS. 11B to 11D . That is, each pattern hole shown in FIGS. 11B to 11D may be formed to correspond to each of the sub-pixel PXa and the main pixel PXm shown in FIG. 12 , respectively. In this case, the first sub-pixel PXa1 and the first main pixel PXm1 may be simultaneously formed on the substrate, and the second sub-pixel PXa2 and the second main pixel PXm2 may be simultaneously formed on the substrate. Also, the third auxiliary pixel PXa3 and the third main pixel PXm3 may be simultaneously formed on the substrate.

13 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.

Referring to FIG. 13 , the auxiliary pixels PXa may be arranged in a stripe shape, and the main pixels PXm may have a circular planar shape and may be arranged in a pentile structure. In this case, the planar shape of the first sub-pixel PXa1 , the second sub-pixel PXa2 , and the third sub-pixel PXa3 may be formed in a line shape. Also, the first main pixel PXm1 , the second main pixel PXm2 , and the third main pixel PXm3 may have a circular planar shape.

In the above case, the area of the first sub-pixel PXa1 disposed in the first display area DA1 is larger than the area of the first main pixel PXm1 disposed in the second display area DA2 in the same area or unit area. can be small An area of the second sub-pixel PXa2 disposed in the first display area DA1 may be smaller than an area of the second main pixel PXm2 disposed in the second display area DA2 in the same area or unit area. In the same area or unit area, the area of the third sub-pixel PXa3 disposed in the first display area DA1 may be smaller than the area of the third main pixel PXm3 disposed in the second display area DA2.

Each of the sub-pixel PXa and the main pixel PXm as described above may be manufactured through a mask sheet having a shape similar to that shown in FIGS. 11B to 11D . That is, each pattern hole shown in FIGS. 11B to 11D may be formed to correspond to each of the sub-pixel PXa and the main pixel PXm shown in FIG. 12 , respectively. In this case, the first sub-pixel PXa1 and the first main pixel PXm1 may be simultaneously formed on the substrate, and the second sub-pixel PXa2 and the second main pixel PXm2 may be simultaneously formed on the substrate. Also, the third auxiliary pixel PXa3 and the third main pixel PXm3 may be simultaneously formed on the substrate.

14 is a plan view illustrating a pixel arrangement of a display device according to another exemplary embodiment.

Referring to FIG. 14 , each of the sub-pixel PXa and the main pixel PXm is formed in a rhombus shape and may be arranged in a pentile structure. In this case, the area on the plane of the sub-pixel PXa emitting the same color may be different from the area on the plane of the main pixel PXm. For example, the area on the plane of the main pixel PXm emitting the same color may be smaller than the area on the plane of the sub-pixel PXa. Specifically, the area on the plane of the first main pixel PXm1 is smaller than the area on the plane of the first sub-pixel PXa1 , and the area on the plane of the second main pixel PXm2 is on the plane of the second sub-pixel PXa2 . smaller than the area, and the planar area of the third main pixel PXm3 may be smaller than the planar area of the third sub-pixel PXa3. In the above case, the same color is emitted, and the number of main pixels PXm per unit area may be greater than the number of auxiliary pixels PXa per unit area. As another embodiment, the total area of the main pixel PXm included in the unit area emitting the same color may be larger than the total area of the auxiliary pixel PXa included in the unit area. Alternatively, the distance between the auxiliary pixels PXa adjacent to each other while emitting the same color may be greater than the distance between the main pixels PXm emitting the same color and adjacent to each other. In this case, the resolution of the first display area DA1 may be smaller than the resolution of the second display area DA2 . The relationship between the main pixel PXm and the sub-pixel PXa described above may be reversed when the resolution of the first display area DA1 is greater than the resolution of the second display area DA2 .

Each of the sub-pixel PXa and the main pixel PXm as described above may be manufactured through a mask sheet having a shape similar to that shown in FIGS. 11B to 11D . That is, each pattern hole shown in FIGS. 11B to 11D may be formed to correspond to each of the sub-pixel PXa and the main pixel PXm shown in FIG. 12 , respectively. In this case, the first sub-pixel PXa1 and the first main pixel PXm1 may be simultaneously formed on the substrate, and the second sub-pixel PXa2 and the second main pixel PXm2 may be simultaneously formed on the substrate. Also, the third auxiliary pixel PXa3 and the third main pixel PXm3 may be simultaneously formed on the substrate.

The shape and arrangement of the main pixel PXm and the behavior and arrangement of the auxiliary pixel PXa are not limited thereto. For example, each pixel may have an S-stripe shape and a shape in which pixels of a rectangle are arranged in the X direction. As another embodiment, all of the pixels may be formed in a stripe shape.

In the above case, the shape and arrangement of the main pixel PXm and the auxiliary pixel PXa are not limited thereto, and the resolution of the first display area DA1 and the resolution of the second display area DA2 are different from each other. It may include any form and arrangement of

15A to 15F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to an embodiment of the present invention.

Referring to FIG. 15A , a base material M may be prepared to manufacture the mask sheet 22 . The base material M may be in a state in which foreign substances adsorbed on each surface are removed through a polishing process, a washing process, and the like. The base material M may be a thin plate, and may include stainless steel, invar, nickel (Ni), cobalt (Co), a nickel alloy, a nickel-cobalt alloy, and the like.

When the base material M is prepared, the first photoresist PR1 and the second photoresist PR2 may be disposed on the first surface M1 and the second surface M2 of the base material M, respectively. In this case, the first photoresist PR1 and the second photoresist PR2 may be sequentially disposed on the base material M or may be disposed on the base material M at the same time.

Thereafter, the first photoresist PR1 in the first area A1 is exposed and treated with a developer to form a first opening OP1 , and the second photoresist PR2 in the first area A1 is exposed and developed. A second opening OP2 may be formed. A position of the second opening OP2 may correspond to a position of the first opening OP1 . In this case, the method of forming the photoresist opening by exposing the photoresist may be different depending on whether the property of the photoresist is a negative method or a positive method. That is, when the photoresist is exposed and treated with a developer, the unexposed portion of the photoresist may be removed when the photoresist is negative, but the exposed portion of the photoresist may be removed when the photoresist is in the positive method.

Through the above process, the first photoresist PR1 having the first opening OP1 positioned in the first area A1 of the base material M is placed on the first surface M1 of the base material M. A second photoresist PR2 having a second opening OP2 corresponding to the first opening OP1 may be formed on the second surface M2 of the base material M.

Meanwhile, as shown in FIG. 9 , when the mask assembly 20 including the mask sheet 22 is disposed in the chamber 10 , the first surface M1 of the mask sheet 22 faces the substrate 100 . may correspond to one surface of , and the second surface M2 may correspond to the other surface of the mask sheet 22 facing the deposition source 50 .

Referring to FIG. 15B , after the above process is completed, the etchant may be sprayed into the first opening OP1 . In this case, the first surface M1 of the base material M on which the first photoresist PR1 is disposed may be disposed to face downward, and the etchant is applied from the lower portion of the first photoresist PR1 to the first surface M1 . ) can be sprayed toward When the etchant is injected into the first opening OP1 , a portion of the first surface M1 of the base material M may be etched at a position corresponding to the first opening OP1 . Accordingly, a groove corresponding to the first opening OP1 may be formed on the first surface M1 . Since the first opening OP1 is located only in the first area A1 , a groove may not be formed in the second area A2 by the etching solution.

Referring to FIG. 15C , the first photoresist PR1 may be removed from the first surface M1 of the base material M. As another example, the first photoresist PR1 may be removed together with the removal of the second photoresist PR2 as described below.

Referring to FIG. 15D , the etching solution may be sprayed into the second opening OP2 . In this case, the etching solution may be sprayed toward the second surface M2 of the base material M from the upper portion of the second photoresist PR2 . When the etchant is injected into the second opening OP2, the second surface M2 of the base material M may be etched at a position corresponding to the second opening OP2, and thus the base material M has the base material M. ) through the first pattern hole PH1 may be formed. Since the second opening OP2 is located only in the first area A1 , a hole may not be formed in the second area A2 .

Referring to FIG. 15E , the second photoresist PR2 may be removed from the second surface M2 of the base material M.

Referring to FIG. 15f , after the above process is completed, a laser beam is irradiated to the second surface M2 of the base material M through the laser processing device at a preset position among the second area A2 of the base material M. Thus, the second pattern hole PH2 may be formed. In this case, the second pattern hole PH2 may be formed such that the width of the inner surface of the second pattern hole PH2 gradually increases from the first surface M1 to the second surface M2 . In this case, the width may be a distance between the inner surfaces of the second pattern holes PH2 in a direction perpendicular to the thickness direction of the base material M. As another example, the second photoresist PR2 may be removed after forming the second pattern hole PH2 by irradiating a laser beam to the base material M.

In one embodiment, the process of forming the second pattern hole PH2 through the laser beam may be performed by repeating the processing a plurality of times by changing the laser processing conditions, for example, the depth of focus of the laser beam, the processing area, etc. have. By irradiating a laser beam on the second surface (M2) of the base material (M), the base material (M) can be removed from the second surface (M2) along the thickness direction of the base material (M). In this case, the profile of the inner surface of the second pattern hole PH2 may be formed while changing the depth of focus of the laser beam in the thickness direction of the base material M.

In order to increase the processing precision through the laser beam, the number of laser beams, the depth of focus, the angle of incidence, the shape, the position, etc. can be controlled using a scanner or an acousto optic diffractor (AOD). Hereinafter, the laser processing apparatus will be described in detail with reference to FIG. 19 .

The display device DD has a plurality of display areas, and differences in characteristics such as shape, arrangement, size, and resolution of pixels disposed in the display areas may be required between the display areas. In order to manufacture the display device DD, the mask sheet 22 may also require a difference in characteristics such as shape, arrangement, size, density, etc. of pattern holes between regions corresponding to the plurality of display regions. . According to an embodiment of the present invention, when two or more pattern holes having different characteristics are formed in one mask sheet 22 as described above, the mask sheet 22 with improved quality can be manufactured.

As a comparative example, even though the first pattern hole PH1 of the first area A1 of the mask sheet 22 and the second pattern hole PH2 of the second area A2 have different characteristics, one When etching is performed by applying processing conditions, a processing deviation between the pattern holes may increase, and processing quality of the mask sheet 22 may be deteriorated. For example, in general, the thickness of the base material M that can be used is also different depending on the size (area) of the pattern hole to be formed, but in the case of the comparative example, since this cannot be taken into account, the processing quality of the pattern hole may be reduced.

However, according to an embodiment of the present invention, in the case of the first pattern hole PH1 disposed in the first area A1 of the mask sheet 22 , the shape, arrangement, size, and density of the first pattern hole PH1 . In the case of the second pattern hole PH2 in the second area A2 that requires relatively precise processing, etching is performed under processing conditions determined in consideration of such characteristics, and processing is performed by separately forming it through a laser beam. precision can be improved. Through this, it is possible to obtain the mask sheet 22 with improved overall quality.

Also, in the case of the second pattern hole PH2, the width of the inner surface of the second pattern hole PH2 gradually increases from the first surface M1 to the second surface M2 by using a laser beam. (PH2) can be formed. As such, the protrusion may not be formed in the middle of the inner surface of the second pattern hole PH2. During deposition using the second pattern hole PH2 , a shadow phenomenon may be minimized and the manufacturing quality of the display device DD may be improved.

In addition, since the second pattern hole PH2 is processed using a laser beam, precise processing is possible without restrictions on various shapes of the second pattern hole PH2.

16A to 16F are cross-sectional views schematically illustrating a manufacturing procedure of a mask sheet according to another embodiment of the present invention. The same content as the manufacturing procedure described above with reference to FIGS. 5A to 5F will be omitted, and differences will be mainly described below.

Referring to FIG. 16A , a first photoresist PR1 and a second photoresist PR2 may be disposed on the first surface M1 and the second surface M2 of the base material M, respectively. Thereafter, the first photoresist PR1 may be exposed and treated with a developer to form the first opening OP1 disposed in the first area A1 . The second photoresist PR2 may be exposed and developed to form the second opening OP2 disposed in the first region A1 and the third opening OP3 disposed in the second region A2 . The second opening OP2 may correspond to the first opening OP1 , and the third opening OP3 may be formed to correspond to the entire second area A2 .

Through the above process, the first photoresist PR1 having the first opening OP1 positioned in the first area A1 of the base material M on the first surface M1 of the base material M is formed. A third formed on the second surface M2 of the base material M to correspond to the second opening OP2 corresponding to the first opening OP1 and the entire second area A2 of the base material M. The second photoresist PR2 having the opening OP3 may be formed.

Referring to FIG. 16B , after the above process is completed, a portion of the first surface M1 of the base material M is etched at a position corresponding to the first opening OP1 by spraying an etching solution into the first opening OP1 . can do. Accordingly, a groove corresponding to the first opening OP1 may be formed on the first surface M1 .

Referring to FIG. 16C , the first photoresist PR1 may be removed from the first surface M1 of the base material M.

Referring to FIG. 16D , the etching solution may be sprayed into the second opening OP2 and the third opening OP3 . When the etchant is sprayed into the second opening OP2, the second surface M2 of the base material M may be etched at a position corresponding to the second opening OP2, and thus the base material M has the base material M. ) through the first pattern hole PH1 may be formed. When the etchant is sprayed into the third opening OP3, the second surface M2 of the base material M may be partially etched at a position corresponding to the third opening OP3, and thus the second surface of the base material M may be partially etched. A wide etched surface may be formed in the area A2 . At this time, the etched depth may be 50% or more, 60% or more, 70% or more, or 80% or more of the original thickness of the base material (M).

Referring to FIG. 16E , the second photoresist PR2 may be removed from the second surface M2 of the base material M.

Referring to Figure 16f, after the above process is completed, the third opening of the second surface M2 of the base material M through the laser processing device at a preset position among the second area A2 of the base material M ( The second pattern hole PH2 may be formed by irradiating a laser beam on the etched surface formed corresponding to OP3). Through this, the mask sheet 22 may be manufactured.

In this case, thicknesses in the first area A1 and the second area A2 of the mask sheet 22 may be different from each other. For example, among the thicknesses of the mask sheet 22 , a thickness t1 in the first area A1 may be smaller than a thickness t2 in the second area A2 . The thickness in the second area A2 may be 50%, or 40%, or 30%, or 20% or less of the thickness in the first area A1 .

According to the above-described embodiment of the present invention, since the second surface M2 of the second area A2 is partially etched before forming the second pattern hole PH2, the amount of laser beam processing can be reduced. Through this, the processability of the laser beam can be improved, and the amount of dust generated during laser processing can be minimized.

17A to 17G are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention. The same content as the manufacturing procedure described above with reference to FIGS. 15A to 15F will be omitted, and differences will be mainly described below.

Referring to FIG. 17A , a first photoresist PR1 and a second photoresist PR2 may be disposed on the first surface M1 and the second surface M2 of the base material M, respectively. Thereafter, the first photoresist PR1 may be exposed and treated with a developer to form the first opening OP1 disposed in the first area A1 . The second photoresist PR2 is exposed and developed to form a second opening OP2 disposed in the first region A1 and a plurality of fourth openings OP4 disposed in the second region A2 and spaced apart from each other. can do. The second opening OP2 may correspond to the first opening OP1 , and the fourth opening OP4 may correspond to a predetermined position where the second pattern hole PH2 is to be formed. Accordingly, the number of the fourth openings OP4 may be the same as the number of the second pattern holes PH2 to be formed.

Through the above process, the first photoresist PR1 having the first opening OP1 positioned in the first area A1 of the base material M is placed on the first surface M1 of the base material M. Formed, the second opening (OP2) corresponding to the first opening (OP1) and disposed in the second area (A2) of the base material (M), the second photo having a plurality of fourth openings (OP4) spaced apart from each other The resist PR2 may be formed on the second surface M2 of the base material M.

Referring to FIG. 17B , after the above process is completed, a portion of the first surface M1 of the base material M is etched at a position corresponding to the first opening OP1 by spraying an etchant into the first opening OP1 . can do. Accordingly, a groove corresponding to the first opening OP1 may be formed on the first surface M1 .

Referring to FIG. 17C , the first photoresist PR1 may be removed from the first surface M1 of the base material M.

Referring to FIG. 17D , the etching solution may be sprayed into the second opening OP2 and the fourth opening OP4 . When the etchant is sprayed into the second opening OP2, the second surface M2 of the base material M may be etched at a position corresponding to the second opening OP2, and thus the base material M has the base material M. ) through the first pattern hole PH1 may be formed. When the etchant is sprayed into the fourth opening OP4 , the second surface M2 of the base material M may be partially etched at a position corresponding to the fourth opening OP4 . At this time, the etched depth may be 50% or more, 60% or more, 70% or more, or 80% or more of the original thickness of the base material (M). The size (area) of the hole formed at the position corresponding to the fourth opening OP4 may be smaller than the size of the second pattern hole PH2 .

Referring to FIG. 17E , the second photoresist PR2 may be removed from the second surface M2 of the base material M.

Referring to FIG. 17f , after the above process is completed, the fourth opening OP4 of the second surface M2 of the base material M through the laser processing apparatus in the second area A2 of the base material M corresponds to the fourth opening OP4. The second pattern hole PH2 may be formed by irradiating a laser beam on the etched surface formed by the above process. Through this, the mask sheet 22 may be manufactured.

According to the embodiment of the present invention described above, before forming the second pattern hole PH2, a portion of the second surface M2 of the base material M is etched in advance at the position where the second pattern hole PH2 is to be formed, It is possible to reduce the amount of laser processing and, of course, it may be easy to identify a position where the second pattern hole PH2 is to be formed, so that it is possible to manually perform laser processing if necessary.

Referring to FIG. 17G , according to some embodiments, a portion etched by the etchant of the base material M may remain around the second pattern hole PH2 . Such a structure may be formed when the width of the fourth opening OP4 is greater than the width of the second pattern hole PH2. In this case, among the thickness t2 in the second region A2 of the mask sheet 22 , the thickness t2-1 in the peripheral region adjacent to the second pattern hole PH2 is the thickness t2-1 in the first region A1. The thickness t2 - 2 in the region between the second pattern holes PH2 that is smaller than the thickness t1 and adjacent to each other may be substantially the same as the thickness t1 in the first region A1 . Before forming the second pattern hole PH2, a portion of the second surface M2 of the base material M is sufficiently etched at a position where the second pattern hole PH2 is to be formed in advance, thereby reducing the amount of laser processing and reducing the amount of laser processing. It may be easy to identify a position where the second pattern hole PH2 is to be formed.

18A to 18F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention.

Referring to FIG. 18A , a first photoresist PR1 and a second photoresist PR2 may be disposed on the first surface M1 and the second surface M2 of the base material M, respectively. Thereafter, the first photoresist PR1 may be exposed and treated with a developer to form the first opening OP1 disposed in the first area A1 . The second photoresist PR2 is exposed and developed to form a second opening OP2 disposed in the first region A1 and a plurality of fifth openings OP5 positioned at an edge of the second region A2 . can The second opening OP2 may correspond to the first opening OP1 .

At least two fifth openings OP5 may be disposed at the edge of the second area A2 . For example, when the second area A2 has a rectangular shape, the fifth opening OP5 may be disposed adjacent to the diagonally opposite corners among the four corners. Alternatively, four fifth openings OP5 may be disposed adjacent to the four corners. In addition, when the second area A2 has a circular shape, at least two or more fifth openings OP5 may be disposed at an edge thereof along a circumference.

Through the above process, the first photoresist PR1 having the first opening OP1 positioned in the first area A1 of the base material M is placed on the first surface M1 of the base material M. a second photoresist having a second opening OP2 corresponding to the first opening OP1 and a plurality of fifth openings OP5 positioned at the edge of the second area A2 of the base material M (PR2) may be formed on the second surface (M2) of the base material (M).

Referring to FIG. 18B , after the above process is completed, a portion of the first surface M1 of the base material M is etched at a position corresponding to the first opening OP1 by spraying an etchant into the first opening OP1 . can do. Accordingly, a groove corresponding to the first opening OP1 may be formed on the first surface M1 .

Referring to FIG. 18C , the first photoresist PR1 may be removed from the first surface M1 of the base material M.

Referring to FIG. 18D , the etching solution may be sprayed into the second opening OP2 and the fifth opening OP5 . When the etchant is sprayed into the second opening OP2, the second surface M2 of the base material M may be etched at a position corresponding to the second opening OP2, and thus the base material M has the base material M. ) through the first pattern hole PH1 may be formed. When the etchant is injected into the fifth opening OP5 , the second surface M2 of the base material M may be partially etched at a position corresponding to the fifth opening OP5 . At this time, the etched depth may be 10% or more, 20% or more, 30% or more, 40% or more, or 50% or more of the original thickness of the base material (M). Through this, at least two reference holes RH may be formed at positions corresponding to the fifth openings OP5. The reference holes RH may be used to align the base material M in a processing step using a laser beam as described in detail with reference to FIG. 9 .

Referring to FIG. 18E , the second photoresist PR2 may be removed from the second surface M2 of the base material M.

Referring to FIG. 18f , after the above process is completed, a laser beam is irradiated to the second surface M2 of the base material M through the laser processing device in the second area A2 of the base material M to form a second pattern. A hole PH2 may be formed. Through this, the mask sheet 22 may be manufactured.

19 is a cross-sectional view schematically showing a laser processing apparatus according to an embodiment of the present invention.

Referring to FIG. 19 , the laser processing apparatus 90 may include a laser oscillation unit 91 , an optical system 92 , a scan unit 93 , a stage 94 , and an inspection unit 95 .

The laser oscillation unit 91 may emit a pulse laser beam to form a pattern hole in the base material (M). The laser oscillation unit 91 may include a UV laser, a CO ₂ laser, and the like.

The optical system 92 may receive the laser beam emitted from the laser oscillation unit 91 and adjust the conditions to be optimal for pattern hole formation. For example, it is possible to finely adjust the intensity of the laser beam, the size of the spot, the irradiation angle, and the number of irradiation. As an example, the size of the spot of the laser beam may be 20 μm or less, but is not limited thereto, and the size of the spot of the laser beam may be changed according to the design change of the mask sheet 22 according to the resolution of the display device DD. have. In addition, as an example, the laser may suppress generation of burrs on the surface of the mask sheet 22 by using an ultra-short pulse laser between several tens of femtoseconds and several hundred picoseconds.

The scan unit 93 may determine the position of the laser beam emitted from the laser oscillation unit 91 , for example, the position of the laser beam on the second surface M2 of the base material M as a workpiece. The scan unit 93 may include a scanner for irradiating the laser beam onto the second surface M2 of the base material M by changing the path of the laser beam.

The stage 94 may support the base material M as a workpiece. The base material M is disposed on the stage 94 and may be fixed by an electrostatic chuck or the like. In addition, the stage 94 can be precisely moved on a plane in order to process the base material M at a desired position by a driving unit (not shown).

The inspection unit 95 may include a 3D imaging module capable of checking the processing area of the base material M and inspecting whether processing is performed. In addition, the inspection unit 95 may include an alignment camera for photographing a predetermined point of the base material (M). After determining the degree of alignment of the base material M by comparing the image data obtained from the alignment camera with preset data, the stage 94 may be moved through a driving unit (not shown) by reflecting this. Through this, it is possible to align the base material (M) so that the processing position of the base material (M) as a workpiece and the position of the scanning unit 93 irradiated with the laser beam coincide.

According to an embodiment of the present invention, the reference hole (RH) may be utilized to align the base material (M). The alignment camera may acquire position information of the reference hole RH disposed in the second area A2 by photographing the second area A2 of the base material M, which is the processing area by the laser beam. With reference to this, the degree of alignment of the base material M may be determined, and the stage 94 may be moved based on the preset position information of the second pattern hole PH2 and the base material M may be aligned. Through this, the second pattern hole PH2 may be formed by irradiating a laser beam to an exact position on the second surface M2 of the base material M.

20A to 20F are cross-sectional views schematically illustrating a manufacturing sequence of a mask sheet according to another embodiment of the present invention.

Referring to FIG. 20A , the base material M may be prepared to manufacture the mask sheet 22 . The base material M may be in a state in which foreign substances adsorbed on each surface are removed through a polishing process, a washing process, and the like.

Referring to FIG. 20B , when the base material M is prepared, a first photoresist PR1 and a second photoresist PR2 are applied to the first surface M1 and the second surface M2 of the base material M, respectively. can be placed In this case, the first photoresist PR1 and the second photoresist PR2 may be sequentially disposed on the base material M or may be disposed on the base material M at the same time. Thereafter, the first photoresist PR1 is exposed and treated with a developer to form a first opening OP1 , and the second photoresist PR2 is exposed and developed to form the second opening OP2 and the third opening OP3 . can be formed In this case, the method of forming the photoresist opening by exposing the photoresist may be different depending on whether the property of the photoresist is a negative method or a positive method. That is, when the photoresist is exposed and treated with a developer, the unexposed portion of the photoresist may be removed when the photoresist is negative, but the exposed portion of the photoresist may be removed when the photoresist is in the positive method.

Referring to FIG. 20C , when the first photoresist PR1 and the second photoresist PR2 are disposed on the base material M as described above, the second opening OP2 and the third opening OP3 on a plane The sizes may be different from each other. For example, when the shape of the second opening OP2 and the shape of the third opening OP3 are the same, the width of the second opening OP2 may be smaller than the width of the third opening OP3 on a plane. In this case, the number of the plurality of second openings OP2 disposed on a unit area or the same area may be greater than the number of the third openings OP3 .

In this case, the second opening OP2 may correspond to the first pattern hole PH1 , and the third opening OP3 may correspond to the second pattern hole PH2 . When the first pattern hole PH1 and the second pattern hole PH2 are formed after a process to be described later is completed, the relationship between the first pattern hole PH1 and the second pattern hole PH2 is the second opening OP2 and The relationship of the third opening OP3 may be similar. That is, the planar size of the second pattern hole PH2 disposed on one surface of the mask sheet 22 may be greater than or equal to the planar size of the first pattern hole PH1 disposed on one surface of the same mask sheet 22 . However, the number of the first pattern holes PH1 disposed in the same area may be greater than the number of the second pattern holes PH2 .

The above relationship may be applied to all embodiments of the present invention. In addition, the above relationship is formed by the first pattern hole PH1, is formed by the second intermediate layer and the second pattern hole PH2 disposed in the first display area, and is formed by the second pattern hole PH2 disposed in the second display area. The same can be applied to the relationship between the first intermediate layers.

Referring to FIG. 20D , after the above process is completed, the etchant may be sprayed into the first opening OP1 . At this time, the first surface M1 of the base material M on which the first photoresist PR1 is disposed may be disposed to face the lower surface, and the etchant may be sprayed from the lower portion of the first photoresist PR1 to the upper surface. have.

When the etching solution is sprayed into the first opening OP1 as described above, a first groove M1-1 may be formed in the base material M to correspond to the first opening OP1. Thereafter, the first photoresist PR1 may be removed from the first surface M1 of the base material M.

Referring to FIG. 20E , after the above process is completed, the etching solution may be sprayed into the second opening OP2 and the third opening OP3 . At this time, the etching solution may be sprayed from the upper surface of the base material (M) in the direction of the second surface (M2) of the base material (M).

When the above process is completed, the etching solution may pass through the second opening OP2 and the third opening OP3 to remove a portion of the base material M. At this time, the etching solution passing through the second opening (OP2) is the base material (M) from the second surface (M2) of the base material (M) to the first surface (M1) of the base material (M) in the thickness direction of the base material (M) The first pattern hole PH1 may be formed by being removed and connected to the first groove M1-1 of the first surface M1 formed to correspond to the first opening OP1. In addition, the etching solution passing through the third opening OP3 may form the second pattern hole PH2 by removing the base material M from the second surface M2 to the first surface M1 .

In the above case, the etching degree of the base material M by the etchant is determined by the width of the second opening OP2 (or the area on a plane SH1) and the width of the first opening OP1 (or the area on the plane SH2)) can be adjusted due to the difference in Specifically, the width (or area on a plane) of the second opening OP2 is formed to be larger than the width (or area on a plane) of the first opening OP1, so that even when the same etchant is sprayed at the same time, the The etched distance in the thickness direction can be adjusted (see Fig. 20c). That is, in this case, the thickness at which the base material M is etched by the etchant that has passed through the second opening OP2 is the thickness that has passed through the first opening OP1. It may be greater than the thickness at which the base material M is etched by the etching solution.

In this case, the second protrusion PH2-a may not be disposed inside the second pattern hole PH2, whereas the first protrusion PH1-a may be disposed inside the first pattern hole PH1. . That is, the second protrusion PH2-a may be disposed at an end of the second pattern hole PH2 , and the first protrusion PH1-a may protrude inside the first pattern hole PH1 .

In this case, the first distance L1 from the first surface M1 to the first protrusion PH1-a is the second distance L2 from the second surface M2 to the first protrusion PH1-a. ) may be different. Specifically, the first distance L1 from the first surface M1 to the first protrusion PH1-a is greater than the second distance L2 from the second surface M2 to the first protrusion PH1-a. can be small In this case, the first surface M1 may be a surface facing the substrate 100 when the mask sheet 22 is disposed in the apparatus 1 for manufacturing the display device illustrated in FIG. 11 .

Accordingly, in the method of manufacturing the display device, it is possible not to form the second protrusion in the portion of the second pattern hole PH2 used when forming the intermediate layer (not shown) of the first display area (not shown). In addition, in the manufacturing method of the display device, it is possible to form an intermediate layer having a precise pattern when manufacturing the display panel, and by forming a short section in which the thickness of the intermediate layer varies, the intermediate layer is deposited to have an area of the intermediate layer substantially equal to the design value. it is possible to do

21 is a perspective view illustrating a display device according to another exemplary embodiment.

Referring to FIG. 21 , the display device DD may be similar to that shown in FIG. 1 . In this case, the display device DD may include a first display area DA1 , a second display area DA2 , and a peripheral area PA.

Unlike FIG. 1 , the first display area DA1 may be a constant area of the display device DD. In this case, the shape of the first display area DA1 may be similar to that of the second display area DA2 . For example, the first display area DA1 may be elongated in the X-axis direction. The first display area DA1 may have a higher light transmittance than the second display area DA2 , and the resolution of the first display area DA1 may be lower than that of the second display area DA2 . As described above, the auxiliary pixel PXa may be disposed in the first display area DA1 , and the main pixel PXm may be disposed in the second display area DA2 . Also, the first display area DA1 may include a transmission area TA in which the sub-pixel PXa is not disposed.

Components may be disposed in various positions in the first display area DA1 as described above. In this case, at least one component may be disposed in the first display area DA1 .

The sub-pixel PXa and the transmissive area TA may be disposed in the first display area DA1 as described above. In this case, at least one auxiliary pixel PXa may be provided to form one pixel area, and these pixel areas may be disposed to be spaced apart from each other in the first display area DA1. In this case, the transmission area TA may be disposed between pixel areas spaced apart from each other. For example, the pixel areas may be arranged in a grid shape, and the transmission area TA may be disposed between the pixel areas.

Unlike the first display area DA1 , a separate transmissive area may not exist in the second display area DA2 . In this case, a plurality of main pixels PXm may be disposed in the second display area DA2 .

As described above, the present invention has been described with reference to an embodiment shown in the drawings, but this is only exemplary, and it will be appreciated by those of ordinary skill in the art that various modifications and variations of the embodiment are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: chamber
20: mask assembly
21: mask frame
22: mask sheet
22-1: first mask sheet
22-2: second mask sheet
22-3: the third mask sheet
23: support frame
30: first support part
40: second support
50: deposition source
60: magnetic force generating unit
70: vision part
80: pressure control unit
90: laser processing device
91: laser oscillation unit
92: optical system
93: scan unit
94: stage
95: inspection unit
100: substrate
200: display element layer
300: thin film encapsulation layer

Claims (54)

a substrate including a first display area including a transmissive area and a second display area disposed to surround at least a portion of the first display area;
a first pixel disposed in the first display area and including a first pixel electrode, a first intermediate layer, and a first counter electrode; and
a second pixel disposed in the second display area and including a second pixel electrode, a second intermediate layer, and a second counter electrode;
Each of the first intermediate layer and the second intermediate layer includes a portion having a constant thickness and a section in which the thickness is variable, and one of the section in which the thickness of the first intermediate layer varies and the section in which the thickness of the second intermediate layer varies. The length is different from the second length of the other one of a section in which the thickness of the first intermediate layer is variable or a section in which the thickness of the second intermediate layer is variable. The method of claim 1,
One of the first length and the second length is shorter than the other one of the first length and the second length. The method of claim 1,
The resolution of the image provided in the first display area is different from the resolution of the image provided in the second display area. The method of claim 1,
and a component disposed on one surface of the substrate to correspond to the first display area and including an electronic element that emits or receives light. The method of claim 1,
The light transmittance of the first display area and the light transmittance of the second display area are different from each other. The method of claim 1,
The size of the planar shape of the first intermediate layer is greater than or equal to the size of the planar shape of the second intermediate layer. A mask assembly comprising a mask sheet, comprising:
The mask sheet,
a first area including at least one first pattern hole;
a second region including at least one second pattern hole; and
and a protrusion protruding into one of the first pattern hole or the second pattern hole on an inner surface of one of the first pattern hole or the second pattern hole, and the inner surface of the first pattern hole and the second pattern hole The inner surface of the pattern hole is different from each other in the mask assembly. The method of claim 7,
The protrusion is
and a first protrusion protruding from an inner surface of the first pattern hole into the first pattern hole. The method of claim 7,
The thickness of the first region and the thickness of the second region are the same or different from each other. The method of claim 7,
A mask assembly having a planar size of the second pattern hole formed on one surface of the second area is greater than or equal to a planar size of the first pattern hole formed on one surface of the first area extending from one surface of the second area. The method of claim 7,
The mask sheet,
A mask assembly having a plurality of reference holes disposed at an edge of the second region. The method of claim 7,
The shape of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet are different from each other. disposing a first photoresist to have a first opening on the first surface of the base material;
disposing a second photoresist to have a second opening and a third opening on a second surface of the base material;
etching a portion of the first surface of the base material by spraying an etching solution into the first opening; and
A mask assembly comprising a; spraying an etching solution into the first opening and the second opening to etch a portion of the second surface of the base material to form a first pattern hole and a second pattern hole penetrating the base material manufacturing method. The method of claim 13,
A width of the second opening is greater than a width of the first opening. The method of claim 13,
A method of manufacturing a mask assembly in which a protrusion protruding from an inner surface of the second pattern hole into the second pattern hole is disposed in the first pattern hole. The method of claim 15,
A distance from the first surface to the protrusion is different from a distance from the second surface to the protrusion. The method of claim 13,
The method of manufacturing a mask assembly further comprising; removing the first photoresist. The method of claim 13,
The method of manufacturing a mask assembly further comprising a; removing the second photoresist. disposing a first photoresist having a first opening positioned in a first region of the base material on the first surface of the base material;
disposing a second photoresist having a second opening corresponding to the first opening on the second surface of the base material;
etching a portion of the first surface of the base material by spraying an etching solution into the first opening;
forming a first pattern hole penetrating the base material by injecting an etching solution into the second opening; and
and forming a second pattern hole penetrating through the base material by irradiating a laser beam to a second area adjacent to the first area among the second surfaces of the base material. The method of claim 19,
The shape of the first pattern hole and the second pattern hole on a plane parallel to the first surface or the second surface are different from each other. The method of claim 19,
Areas of the first pattern hole and the second pattern hole on a plane parallel to the first surface or the second surface are different from each other. The method of claim 19,
The number of the first pattern hole and the second pattern hole per same area is different from each other. The method of claim 19,
The method of manufacturing a mask assembly further comprising; removing the first photoresist. The method of claim 19,
The method of manufacturing a mask assembly further comprising; removing the second photoresist. The method of claim 19,
The step of forming the second pattern hole,
and forming the width of the second pattern hole in a direction perpendicular to the thickness direction of the base material to gradually increase from the first surface to the second surface. The method of claim 19,
The second photoresist further includes a third opening formed to correspond to the entire second region,
Etching a portion of the second surface of the base material by spraying an etchant into the third opening; further comprising a method of manufacturing a mask assembly. The method of claim 26,
Forming a second pattern hole penetrating through the base material by irradiating a laser beam to the etched surface formed corresponding to the third opening among the second surfaces of the base material. The method of claim 19,
The second photoresist is located in the second region, and further includes a plurality of fourth openings spaced apart from each other,
Etching a portion of the second surface of the base material by spraying an etchant into the fourth opening; further comprising a method of manufacturing a mask assembly. The method of claim 28,
The forming of the second pattern hole includes forming a second pattern hole penetrating through the base material by irradiating a laser beam to an etched surface formed corresponding to the fourth opening among the second surfaces of the base material. A method of manufacturing a mask assembly. The method of claim 19,
The second photoresist further includes a plurality of fifth openings positioned at the edge of the second region,
Forming at least two reference holes by etching a portion of the second surface of the base material by spraying an etching solution into the fifth openings. The method of claim 30,
Before irradiating the laser beam, aligning the base material using the reference holes; further comprising a method of manufacturing a mask assembly. chamber;
a mask assembly disposed within the chamber; and
a deposition source for supplying a deposition material to the display substrate disposed to face the mask assembly;
The mask assembly includes a mask sheet through which the deposition material supplied from the deposition source passes;
The mask sheet,
a first area including at least one first pattern hole;
a second region including at least one second pattern hole; and
a protrusion protruding into one of the first pattern hole or the second pattern hole on an inner surface of one of the first pattern hole or the second pattern hole;
The inner surface of the first pattern hole and the inner surface of the second pattern hole are different from each other. 33. The method of claim 32,
The protrusion is
and a first protrusion protruding from an inner surface of the first pattern hole into the first pattern hole. 33. The method of claim 32,
The thickness of the first region and the thickness of the second region are the same or different from each other. 33. The method of claim 32,
The flat size of the inlet of the first pattern hole formed on one surface of the first area is greater than or equal to the planar size of the inlet of the second pattern hole formed on one surface of the second area extending from the one surface of the first area . 33. The method of claim 32,
and a plurality of reference holes positioned at an edge of the first region or an edge of the second region. The method of claim 32,
Among the thicknesses in the second region of the mask sheet, a thickness in a region around the second pattern hole is smaller than a thickness in the first region,
and a thickness in a region between the adjacent second pattern holes is the same as a thickness in the first region. The method of claim 32,
A width of the second pattern hole in a direction perpendicular to a thickness direction of the mask sheet is formed to gradually increase from one surface of the mask sheet to the other surface. The method of claim 32,
and shapes of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet are different from each other. The method of claim 32,
and areas of the first pattern hole and the second pattern hole on a plane parallel to one surface of the mask sheet are different from each other. The method of claim 32,
and the number of the first pattern hole and the second pattern hole per same area is different from each other. The method of claim 32,
The mask sheet,
An apparatus for manufacturing a display device in which a plurality of reference holes are disposed at an edge of the second region. placing and aligning the display substrate and the mask assembly in the chamber; and
supplying a deposition material by passing the mask assembly from the deposition source to the display substrate;
The mask assembly includes a mask sheet through which the deposition material supplied from the deposition source passes;
The mask sheet,
a first area including at least one first pattern hole;
a second region including at least one second pattern hole; and
and a protrusion protruding into one of the first pattern hole or the second pattern hole on an inner surface of one of the first pattern hole or the second pattern hole, and the inner surface of the first pattern hole and the second pattern hole A method of manufacturing a display device wherein the inner surfaces of the pattern holes are different from each other. 44. The method of claim 43,
The protrusion is
and a first protrusion protruding from an inner surface of the first pattern hole into the first pattern hole. 44. The method of claim 43,
The thickness of the first region and the thickness of the second region are the same or different from each other. 44. The method of claim 43,
A plane size of the second pattern hole formed on one surface of the second region is greater than or equal to a plane size of an inlet of the first pattern hole formed on one surface of the first region extending from one surface of the second region. 44. The method of claim 43,
The mask sheet,
A method of manufacturing a display device in which a plurality of reference holes are disposed at an edge of the second region. forming a first intermediate layer on a first display area of a display substrate; and
Including; forming a second intermediate layer on the second display area of the display substrate;
Each of the first intermediate layer and the second intermediate layer includes a portion having a constant thickness and a section in which the thickness is variable, and one of the section in which the thickness of the first intermediate layer varies and the section in which the thickness of the second intermediate layer varies. The length is different from the second length of the other one of a section in which the thickness of the first intermediate layer is variable or a section in which the thickness of the second intermediate layer is variable. 49. The method of claim 48,
One of the first length and the second length is shorter than the other one of the first length and the second length. 49. The method of claim 48,
The resolution of the image provided in the first display area is different from the resolution of the image provided in the second display area. 49. The method of claim 48,
and disposing a component disposed on one surface of the substrate to correspond to the first display area and including an electronic element that emits or receives light. 49. The method of claim 48,
The light transmittance of the first display area and the light transmittance of the second display area are different from each other. 49. The method of claim 48,
The size of the planar shape of the first intermediate layer is greater than or equal to the size of the planar shape of the second intermediate layer. 54. The method of claim 53,
A thickness of a section having a constant thickness among the first intermediate layer and a thickness of a section having a constant thickness of the second intermediate layer are the same as each other.

Images