DE102013207330A1 - Silicone elastomer isolated electrode in the CVD reactor - Google Patents
Silicone elastomer isolated electrode in the CVD reactor Download PDFInfo
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- DE102013207330A1 DE102013207330A1 DE201310207330 DE102013207330A DE102013207330A1 DE 102013207330 A1 DE102013207330 A1 DE 102013207330A1 DE 201310207330 DE201310207330 DE 201310207330 DE 102013207330 A DE102013207330 A DE 102013207330A DE 102013207330 A1 DE102013207330 A1 DE 102013207330A1
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- silicone elastomer
- electrode
- iec
- electrically insulating
- electrode holder
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/002—Avoiding undesirable reactions or side-effects, e.g. avoiding explosions, or improving the yield by suppressing side-reactions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00245—Avoiding undesirable reactions or side-effects
- B01J2219/00247—Fouling of the reactor or the process equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00245—Avoiding undesirable reactions or side-effects
- B01J2219/00256—Leakage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
Abstract
Vorrichtung mit einer elektrisch isolierenden Hülse 41 für eine Elektrodenhalterung 21 in CVD Reaktoren, umfassend eine zur Aufnahme eines Filamentstabes 81 geeigneten Elektrode 31 auf einer Elektrodenhalterung 21 aus einem elektrisch leitfähigen Material, die in einer Aussparung einer Bodenplatte 11 angebracht ist, dadurch gekennzeichnet, dass die elektrisch isolierende Hülse 41 aus einem Siliconelastomer besteht, welches einen spezifischen Durchgangswiderstand von mindestens 1012 Ωcm gemessen nach IEC 60093 aufweist.Device with an electrically insulating sleeve 41 for an electrode holder 21 in CVD reactors, comprising an electrode 31 suitable for receiving a filament rod 81 on an electrode holder 21 made of an electrically conductive material, which is attached in a recess in a base plate 11, characterized in that the electrically insulating sleeve 41 consists of a silicone elastomer, which has a volume resistance of at least 1012 Ωcm measured according to IEC 60093.
Description
Die Erfindung betrifft Siliconelastomer-isolierte Elektroden für den Einsatz im CVD (Chemical Vapor Deposition) Reaktor.The invention relates to silicone elastomer-insulated electrodes for use in the CVD (Chemical Vapor Deposition) reactor.
Hochreines polykristallines Silicium (Polysilicium) wird in der Regel mittels des Siemensprozesses hergestellt. Dabei wird ein Reaktionsgas enthaltend eine oder mehrere Silicium enthaltende Komponenten und gegebenenfalls Wasserstoff in einen Reaktor, beinhaltend durch direkten Stromdurchgang erhitze Trägerkörper, eingeleitet, an denen sich Silicium in fester Form abscheidet.High-purity polycrystalline silicon (polysilicon) is usually produced by means of the Siemens process. In this case, a reaction gas containing one or more silicon-containing components and optionally hydrogen is introduced into a reactor containing by direct passage of current heated carrier body, deposited on which silicon in solid form.
Als Silicium enthaltende Verbindungen werden bevorzugt Silan (SiH4), Monochlorsilan (SiH3Cl), Dichlorsilan (SiH2Cl2), Trichlorsilan (SiHCl3), Tetrachlorsilan (SiCl4) bzw. deren Mischungen eingesetzt.The silicon-containing compounds used are preferably silane (SiH 4 ), monochlorosilane (SiH 3 Cl), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), tetrachlorosilane (SiCl 4 ) or mixtures thereof.
Jeder Trägerkörper besteht meistens aus zwei dünnen Filamentstäben und einer Brücke, die in der Regel benachbarte Stäbe an ihren freien Enden verbindet. Am häufigsten werden die Filamentstäbe aus ein- oder polykristallinem Silicium gefertigt, seltener kommen Metalle bzw. Legierungen oder Kohlenstoff zum Einsatz. Die Filamentstäbe stecken senkrecht in am Reaktorboden befindlichen Elektroden über die der Anschluss an die Elektrodenhalterung und Stromversorgung erfolgt. An den erhitzten Filamentstäben und der waagrechten Brücke scheidet sich hochreines Polysilicium ab, wodurch deren Durchmesser mit der Zeit anwächst. Nachdem der gewünschte Durchmesser erreicht ist, wird der Prozess beendet.Each support body usually consists of two thin filament rods and a bridge, which usually connects adjacent rods at their free ends. Most commonly, the filament rods are made of monocrystalline or polycrystalline silicon, less frequently metals or alloys or carbon are used. The filament rods are mounted vertically in the electrodes located at the bottom of the reactor via which the connection to the electrode holder and power supply takes place. High-purity polysilicon deposits on the heated filament rods and the horizontal bridge, causing their diameter to increase over time. After the desired diameter is reached, the process is terminated.
Die Siliciumstäbe werden im CVD Reaktor von speziellen Elektroden gehalten, die in der Regel aus Graphit bestehen. Jeweils zwei Dünnstäbe mit unterschiedlicher Spannungspolung an den Elektrodenhalterungen sind am anderen Dünnstabende mit einer Brücke zu einem geschlossenen Stromkreis verbunden. Über die Elektroden und deren Elektrodenhalterungen wird elektrische Energie zur Beheizung der Dünnstäbe zugeführt. Dabei wächst der Durchmesser der Dünnstäbe. Gleichzeitig wächst die Elektrode, beginnend an ihrer Spitze, in den Stabfuß der Siliciumstäbe ein. Nach dem Erreichen eines gewünschten Solldurchmessers der Siliciumstäbe wird der Abscheideprozess beendet, die Siliciumstäbe abgekühlt und ausgebaut.The silicon rods are held in the CVD reactor by special electrodes, which are usually made of graphite. In each case two thin rods with different voltage polarity at the electrode holders are connected at the other end of the thin rod with a bridge to a closed circuit. Electrical energy is supplied to the heating of the thin rods via the electrodes and their electrode holders. The diameter of the thin rods increases. At the same time, the electrode, beginning at its tip, grows into the rod base of the silicon rods. After reaching a desired nominal diameter of the silicon rods of the deposition process is terminated, the silicon rods cooled and removed.
Eine besondere Bedeutung kommt hier der elektrischen Isolation der durch die Bodenplatte geführten Elektrodenhalterung zu. Entscheidend für die Wirtschaftlichkeit des oben beschriebenen Siemensprozesses ist die Standzeit. Der hier beschriebene Siemensprozess ist dabei dadurch gekennzeichnet, dass man versucht möglichst lange Standzeiten zu erreichen, um zu immer längeren und dickeren Stäben in kürzeren Abscheidungszyklen zu gelangen. Für die thermische und elektrische Isolierung der Elektrodenhalterung zur Bodenplatte eines Reaktors werden Hülsen verwendet, daher haben diese sowie deren Material eine große Bedeutung für den Abscheideprozess. Denn durch ein optimiertes Material können Störungen, die die Ausbeute und/oder die Qualität beeinflussen, beim Prozess der Abscheidung von Polysilicium vermieden werden. Zu solchen möglichen Störungen gehören unter anderem auch elektrische Ausfälle durch Erdschlüsse während der Abscheidung. Diese Störung reduziert die Ausbringung, weil der Prozess vorzeitig abgebrochen wird und somit eine verkürzte Standzeit resultiert.Of particular importance here is the electrical insulation of the electrode holder guided through the base plate. Decisive for the economy of the Siemens process described above is the service life. The Siemens process described here is characterized in that one tries to achieve longest possible service life in order to obtain increasingly longer and thicker rods in shorter deposition cycles. Sleeves are used for the thermal and electrical insulation of the electrode holder to the bottom plate of a reactor, so these and their material have a great importance for the deposition process. For an optimized material can avoid disturbances which influence the yield and / or the quality in the process of the deposition of polysilicon. Such potential disturbances include, among other things, electrical breakdowns due to earth leakage during deposition. This disturbance reduces the output because the process is terminated prematurely and thus results in a shortened service life.
Im Stand der Technik wurden unterschiedlich Ansätze zur Abdichtung und Isolierung der durch die Bodenplatte geführten Elektrode beschrieben, um die Problematik von elektrischen Ausfällen zu lösen.In the prior art, various approaches have been described for sealing and insulating the guided through the bottom plate electrode to solve the problem of electrical failure.
In
Der Siemensprozess ist ein Batchprozess. Er ist durch hohe Schwankungen der Temperatur gekennzeichnet. Wegen dieser großen Temperaturschwankungen werden vom Isolierstoff der Hülse idealer Weise sowohl eine hohe thermische Formstabilität und gleichzeitig eine lang anhaltende Flexibilität selbst nach mehreren Prozesszyklen gefordert. Diese Forderungen können keramische Werkstoffe nicht erfüllen. PTFE hingegen besitzt aufgrund seiner Fließeigenschaften – speziell bei hohen Temperaturenden Nachteil, dass der Isolator nach jedem Batch nicht mehr in seine Ursprungsform zurückgeht und sich dadurch Spalten zwischen Isolationswerkstoff und Dichtungsmaterial ausbilden, welche das elektrische Isoliervermögen herabsetzen.The Siemens process is a batch process. It is characterized by high fluctuations in temperature. Because of these large variations in temperature, the insulating material of the sleeve ideally requires both high thermal dimensional stability and, at the same time, long-term flexibility even after several process cycles. These requirements can not meet ceramic materials. PTFE, on the other hand, owing to its flow properties-especially at high temperature ends-has the disadvantage that the insulator no longer returns to its original shape after each batch, thereby forming gaps between the insulating material and the sealing material, which reduce the electrical insulating capacity.
Die bislang bekannten Vorrichtungen zeigen somit keinen ausreichenden Schutz der Dichtung der Elektrodenhalterungen. Zudem wurde bisher noch kein ausreichender Schutz der Dichtung vor Korrosion und damit Austrag von die Produktqualität beeinflussenden Stoffen (insbes. Dotierstoffe) gefunden. Des Weiteren haben die dem Stand der Technik entsprechenden Isolationsmaterialien den Nachteil leicht zu verschmutzen was ebenfalls die Kriechstromfestigkeit herabsetzt (z. B. Ablagerungen aus dem Prozessraum auf dem Isolator durch undichte Dichtungen). Alle diese Punkte haben zur Folge, dass die Ausfallwahrscheinlichkeit aufgrund von Erdschlüssen erhöht ist.The previously known devices thus do not show sufficient protection of the seal of the electrode holders. In addition, no adequate protection of the seal against corrosion and thus discharge of product quality influencing substances (especially dopants) has been found so far. Furthermore, the prior art insulation materials have the disadvantage of easily contaminating, which also reduces creep resistance (eg, deposits from the process space on the insulator due to leaking seals). All these points have the consequence that the probability of failure due to ground faults is increased.
Aufgabe der Erfindung ist daher das Bereitstellen einer Vorrichtung, die diese negativen Effekte deutlich und kostengünstig reduziert.The object of the invention is therefore to provide a device that significantly and cost-effectively reduces these negative effects.
Diese Aufgabe wird überraschenderweise gelöst durch eine Vorrichtung mit einer elektrisch isolierenden Hülse
Die erfindungsgemäße elektrisch isolierende Hülse
Die erfindungsgemäße Hülse
Die Hülse
Elektrisch isolierende Eigenschaften der Hülse
Die erfindungsgemäß eingesetzten Hülsen
The sleeves used in the
Die Kriechstromfestigkeit nach
Mechanische Eigenschaften der Hülse
Die Shore A Härte des Siliconelastomers der Hülse
The Shore A hardness of the silicone elastomer of the
Die Reißdehnung des Siliconelastomers der Hülse
Im Folgenden wird die Erfindung anhand von
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 1111
- Bodenplatte eines ReaktorsBottom plate of a reactor
- 2121
- Elektrodenhalterungelectrode holder
- 3131
- Elektrodeelectrode
- 4141
- Hülseshell
- 5151
- Dichtung InnenraumSeal interior
- 6161
- Ringführungring guide
- 7171
- Dichtung AußenraumSeal exterior space
- 8181
- Filamentstabfilament rod
Die Bodenplatte
Beispielsweise Glimmer-Dichtungen mit PTFE-Auflage und PTFE-Dichtungen mit einem Anteil von 30–40% Siliziumdioxid. Als Materialien der Elektrodenhalterung
Beispiele:Examples:
Die nachfolgenden Beispiele beschreiben die prinzipielle Ausführbarkeit der vorliegenden Erfindung, ohne jedoch diese auf die darin offenbarten Inhalte zu beschränken.The following examples describe the basic practicability of the present invention without, however, limiting it to the contents disclosed therein.
Es wurde eine CVD-Reaktor mit Elektroden analog zu
Die Tabelle 1 zeigt Eigenschaften des vernetzten Siliconelastomers der Hülse
Es wurden durch Versuche über 4000 Batches mit den erfindungsgemässen Hülsen
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 2328303 A1 [0008] DE 2328303 A1 [0008]
- JP 2009221058 A2 [0009] JP 2009221058 A2 [0009]
- WO 2010068849 A1 [0010, 0010, 0010] WO 2010068849 A1 [0010, 0010, 0010]
- DE 102004050128 A1 [0017] DE 102004050128 A1 [0017]
- DE 102004050129 A1 [0017] DE 102004050129 A1 [0017]
Zitierte Nicht-PatentliteraturCited non-patent literature
- IEC 60093 [0014] IEC 60093 [0014]
- IEC 60093 [0018] IEC 60093 [0018]
- IEC 60587 [0019] IEC 60587 [0019]
- IEC 60587 [0019] IEC 60587 [0019]
- ISO 868 [0020] ISO 868 [0020]
- ISO 37 [0021] ISO 37 [0021]
- ISO 868 [0027] ISO 868 [0027]
- ISO 37 [0027] ISO 37 [0027]
- IEC 60093 [0027] IEC 60093 [0027]
- IEC 60587 [0027] IEC 60587 [0027]
Claims (2)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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DE201310207330 DE102013207330A1 (en) | 2013-04-23 | 2013-04-23 | Silicone elastomer isolated electrode in the CVD reactor |
PCT/EP2014/056101 WO2014173607A1 (en) | 2013-04-23 | 2014-03-26 | Silicone-elastomer insulated electrode in the cvd reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE201310207330 DE102013207330A1 (en) | 2013-04-23 | 2013-04-23 | Silicone elastomer isolated electrode in the CVD reactor |
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Publication Number | Publication Date |
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DE102013207330A1 true DE102013207330A1 (en) | 2014-10-23 |
Family
ID=50434176
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DE201310207330 Withdrawn DE102013207330A1 (en) | 2013-04-23 | 2013-04-23 | Silicone elastomer isolated electrode in the CVD reactor |
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DE (1) | DE102013207330A1 (en) |
WO (1) | WO2014173607A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2328303A1 (en) | 1973-06-04 | 1975-01-02 | Siemens Ag | Vapour deposition resistance heated carrier electrode - comprises replaceable intermediate element |
DE102004050129A1 (en) | 2004-10-14 | 2006-04-20 | Wacker Chemie Ag | Silicone rubber composition containing untreated aluminum hydroxide as filler |
DE102004050128A1 (en) | 2004-10-14 | 2006-04-20 | Wacker Chemie Ag | Silicone rubber composition with improved durability |
JP2009221058A (en) | 2008-03-17 | 2009-10-01 | Mitsubishi Materials Corp | Polycrystalline silicon production apparatus |
WO2010068849A1 (en) | 2008-12-12 | 2010-06-17 | Gtsp Global | High temperature and high voltage electrode assembly design |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011077967A1 (en) * | 2011-06-22 | 2012-12-27 | Wacker Chemie Ag | Electrode and method for powering a reactor |
-
2013
- 2013-04-23 DE DE201310207330 patent/DE102013207330A1/en not_active Withdrawn
-
2014
- 2014-03-26 WO PCT/EP2014/056101 patent/WO2014173607A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2328303A1 (en) | 1973-06-04 | 1975-01-02 | Siemens Ag | Vapour deposition resistance heated carrier electrode - comprises replaceable intermediate element |
DE102004050129A1 (en) | 2004-10-14 | 2006-04-20 | Wacker Chemie Ag | Silicone rubber composition containing untreated aluminum hydroxide as filler |
DE102004050128A1 (en) | 2004-10-14 | 2006-04-20 | Wacker Chemie Ag | Silicone rubber composition with improved durability |
JP2009221058A (en) | 2008-03-17 | 2009-10-01 | Mitsubishi Materials Corp | Polycrystalline silicon production apparatus |
WO2010068849A1 (en) | 2008-12-12 | 2010-06-17 | Gtsp Global | High temperature and high voltage electrode assembly design |
Non-Patent Citations (4)
Title |
---|
IEC 60093 |
IEC 60587 |
ISO 37 |
ISO 868 |
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Publication number | Publication date |
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WO2014173607A1 (en) | 2014-10-30 |
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