DE102013200868A1 - Forming bonded connection between first and second joining members, comprises applying protective layer on protected surface portion of first connecting member, and forming bonded connection between connecting surfaces of members - Google Patents

Forming bonded connection between first and second joining members, comprises applying protective layer on protected surface portion of first connecting member, and forming bonded connection between connecting surfaces of members Download PDF

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Publication number
DE102013200868A1
DE102013200868A1 DE201310200868 DE102013200868A DE102013200868A1 DE 102013200868 A1 DE102013200868 A1 DE 102013200868A1 DE 201310200868 DE201310200868 DE 201310200868 DE 102013200868 A DE102013200868 A DE 102013200868A DE 102013200868 A1 DE102013200868 A1 DE 102013200868A1
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Prior art keywords
protective layer
connection
protected
surface portion
layer
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Granted
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DE201310200868
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German (de)
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DE102013200868B4 (en
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Lars Böwer
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Infineon Technologies AG
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Infineon Technologies AG
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Priority to DE102013200868.6A priority Critical patent/DE102013200868B4/en
Priority to CN201410026183.4A priority patent/CN103943518B/en
Publication of DE102013200868A1 publication Critical patent/DE102013200868A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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Abstract

The method comprises applying a protective layer (3) on a protected surface portion of a first connecting member (1) such that the protected surface portion is completely covered by the protective layer, forming a bonded connection between a first metallic connecting surface of the first connecting member and a second connecting surface of a second connecting member (2) in a state in which the protective layer is applied, and partially removing the protective layer of the protected surface portion after production of the material connection. The method comprises applying a protective layer (3) on a protected surface portion of a first connecting member (1) such that the protected surface portion is completely covered by the protective layer, forming a bonded connection between a first metallic connecting surface of the first connecting member and a second connecting surface of a second connecting member (2) in a state in which the protective layer is applied, and partially removing the protective layer of the protected surface portion after production of the material connection. The forming step comprises pressing the first and second connecting members to each other with a predetermined contact pressure of 0-30 MPa such that a paste is arranged between the first and second joining surfaces and contains a metal powder and a solvent so that the first connection surface contacts the second connecting surface, and sintering the paste at a temperature of 150-280[deg] C and predetermined pressure. The protective layer is: applied over the entire surface of the protected surface portion; performed by a physical vapor deposition method; formed as a nitride layer, an imide layer, a resist layer, a diamond-like carbon layer and a graphite layer; and removed by dry etching, plasma etching or wet etching method, by laser ablation or by treatment with an oxygen plasma. A patterned mask layer is partially removed from the first connecting member by the dry etching, plasma etching or wet etching method. The protective layer is provided as a positive photoresist layer or a negative photoresist layer, or is patterned by photolithography after the production of the material connection such that the protected surface portion is exposed. The first connecting member is formed as a substrate (6). The second connecting member is formed as a semiconductor chip (5) having an upper chip metallization and a lower chip metallization. The upper chip metallization is arranged facing away from the semiconductor chip after the formation of the bonded connection. The lower chip metallization is arranged facing a side of the chip after formation of the bonded connection. The first connection surface is formed by a surface portion of the lower chip metallization. The protected surface portion is formed by a surface portion of the metallic surface of the substrate. The protective layer is applied at a time when the semiconductor chip is located in a wafer composite with a further semiconductor chip. An independent claim is included for a method for forming an electrical connection.

Description

Die Erfindung betrifft Verfahren zur Herstellung einer stoffschlüssigen Verbindung und einer elektrischen Verbindung. Bei der Herstellung stoffschlüssiger Verbindungen zwischen zwei Fügepartnern kommt es häufig vor, dass es durch den Fügeprozess zu einer Kontamination in der Umgebung der Fügestelle kommt. Eine derartige Kontamination kann weitere Prozessschritte wie beispielsweise die Herstellung einer elektrischen Verbindung nachteilig beeinträchtigen. Beispielsweise wird zum Herstellen einer stoffschlüssigen Verbindung durch Niedertemperaturdrucksintern eine Paste, die unter anderem ein Metallpulver und ein Lösungsmittel enthält, als Verbindungsmittel eingesetzt. Während des Sintervorgangs treten aus der Paste beispielsweise Fettsäuren aus, die die Umgebung nachteilig beeinflussen. Ein weiteres Beispiel für eine derartige Kontamination ist Lot, das beim Herstellen einer stoffschlüssigen Lötverbindung unbeabsichtigt verspritzt wird. The invention relates to methods for producing a cohesive connection and an electrical connection. In the production of cohesive connections between two joining partners, it often happens that it comes through the joining process to a contamination in the vicinity of the joint. Such contamination may adversely affect further process steps such as the production of an electrical connection. For example, to produce a material bond by low-temperature pressure sintering, a paste containing inter alia a metal powder and a solvent is used as the bonding agent. During the sintering process, for example, fatty acids leave the paste, which adversely affect the environment. Another example of such a contamination is solder, which is accidentally splashed when producing a cohesive solder joint.

Die Aufgabe der vorliegenden Erfindung besteht darin, ein Verfahren zur Herstellung einer stoffschlüssigen Verbindung bereitzustellen, mit denen die eingangs geschilderten Probleme vermieden werden können oder zumindest weniger stark ausgeprägt sind, wenn mit dem durch die stoffschlüssige Verbindung erzeugten Verbund eine elektrische Verbindung hergestellt wird. Eine weitere Aufgabe der Erfindung besteht darin, ein Verfahren zur Herstellung einer elektrischen Verbindung bereitzustellen, mit dem die eingangs geschilderten Probleme vermieden werden können oder zumindest weniger stark ausgeprägt sind. Diese Aufgaben werden durch ein Verfahren zur Herstellung einer stoffschlüssigen Verbindung gemäß Patentanspruch 1 bzw. durch ein Verfahren zur Herstellung einer elektrischen Verbindung gemäß Patentanspruch 15 gelöst. Ausgestaltungen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen. The object of the present invention is to provide a method for producing a cohesive connection, with which the problems described above can be avoided or at least less pronounced when an electrical connection is made with the composite produced by the cohesive connection. Another object of the invention is to provide a method for producing an electrical connection, with which the problems described above can be avoided or at least less pronounced. These objects are achieved by a method for producing a cohesive connection according to claim 1 or by a method for producing an electrical connection according to claim 15. Embodiments and developments of the invention are the subject of dependent claims.

Ein erster Aspekt der Erfindung betrifft ein Verfahren zur Herstellung einer stoffschlüssigen Verbindung zwischen einem ersten Fügepartner und einem zweiten Fügepartner. Hierzu werden ein erster Fügepartner bereitgestellt, der eine erste Verbindungsfläche aufweist, sowie einen von der ersten Verbindungsfläche verschiedenen zu schützenden Oberflächenabschnitt. Weiterhin wird ein zweiter Fügepartner bereitgestellt, der eine zweite Verbindungsfläche aufweist. Auf den zu schützenden Oberflächenabschnitt wird eine Schutzschicht derart aufgebracht, dass der zu schützende Oberflächenabschnitt vollständig von der Schutzschicht bedeckt ist. In einem Zustand, in dem die Schutzschicht auf den zu schützenden Oberflächenabschnitt aufgebracht ist, wird zwischen der ersten Verbindungsfläche und der zweiten Verbindungsfläche eine stoffschlüssige Verbindung hergestellt. Nach dem Herstellen der stoffschlüssigen Verbindung wird die Schutzschicht von dem zu schützenden Oberflächenabschnitt zumindest teilweise wieder entfernt. A first aspect of the invention relates to a method for producing a cohesive connection between a first joining partner and a second joining partner. For this purpose, a first joining partner is provided, which has a first connecting surface, as well as a different surface area to be protected from the first connecting surface. Furthermore, a second joining partner is provided, which has a second connecting surface. On the surface portion to be protected, a protective layer is applied so that the surface portion to be protected is completely covered by the protective layer. In a state in which the protective layer is applied to the surface portion to be protected, a material connection is made between the first connecting surface and the second connecting surface. After producing the cohesive connection, the protective layer is at least partially removed from the surface section to be protected.

Gemäß einem weiteren Aspekt wird eine elektrische Verbindung dadurch hergestellt, dass nach dem Herstellen einer stoffschlüssigen Verbindung eine elektrisch leitende Verbindung zwischen dem zu schützenden Oberflächenabschnitt und einem elektrisch leitenden Anschlusselement erzeugt wird, und zwar nach dem zumindest teilweisen Entfernen der Schutzschicht von dem zu schützenden Oberflächenabschnitt. According to a further aspect, an electrical connection is produced by producing an electrically conductive connection between the surface section to be protected and an electrically conductive connection element after the at least partial removal of the protective layer from the surface section to be protected.

Die Erfindung wird nachfolgend unter Bezugnahme auf die beigefügten Figuren anhand von Ausführungsbeispielen erläutert. Die Darstellung in den Figuren ist nicht maßstäblich. Es zeigen: The invention will be explained below with reference to the accompanying figures with reference to embodiments. The representation in the figures is not to scale. Show it:

1A bis 1M ein Verfahren zur Herstellung einer stoffschlüssigen Verbindung zwischen zwei Fügepartnern. 1A to 1M a method for producing a material connection between two joining partners.

2 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 1A bis 1M erläuterten zu schützenden Oberflächenabschnitt, wobei das Anschlusselement den zu schützenden Oberflächenabschnitt unmittelbar kontaktiert. 2 a method for producing an electrical connection between an electrically conductive connection element and the basis of the 1A to 1M explained surface to be protected portion, wherein the connection element directly contacted the surface to be protected surface portion.

3 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 1A bis 1M erläuterten zu schützenden Oberflächenabschnitt unter Verwendung eines zusätzlichen Verbindungsmittels. 3 a method for producing an electrical connection between an electrically conductive connection element and the basis of the 1A to 1M explained surface to be protected using an additional bonding agent.

4A bis 4F ein weiteres Verfahren zur Herstellung einer stoffschlüssigen Verbindung zwischen zwei Fügepartnern. 4A to 4F Another method for producing a cohesive connection between two joining partners.

5 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 4A bis 4F erläuterten zu schützenden Oberflächenabschnitt, wobei das Anschlusselement den zu schützenden Oberflächenabschnitt unmittelbar kontaktiert. 5 a method for producing an electrical connection between an electrically conductive connection element and the basis of the 4A to 4F explained surface to be protected portion, wherein the connection element directly contacted the surface to be protected surface portion.

6 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 4A bis 4F erläuterten zu schützenden Oberflächenabschnitt unter Verwendung eines zusätzlichen Verbindungsmittels. 6 a method for producing an electrical connection between an electrically conductive connection element and the basis of the 4A to 4F explained surface to be protected using an additional bonding agent.

7A bis 7E noch ein anderes Verfahren zur Herstellung einer stoffschlüssigen Verbindung zwischen zwei Fügepartnern. 7A to 7E Yet another method for producing a cohesive connection between two joining partners.

8 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 7A bis 7E erläuterten zu schützenden Oberflächenabschnitt, wobei das Anschlusselement den zu schützenden Oberflächenabschnitt unmittelbar kontaktiert. 8th a method for producing an electrical connection between an electrically conductive connection element and the basis of the 7A to 7E explained surface to be protected portion, wherein the connection element directly contacted the surface to be protected surface portion.

9 ein Verfahren zur Herstellung einer elektrischen Verbindung zwischen einem elektrisch leitenden Anschlusselement und dem anhand der 7A bis 7E erläuterten zu schützenden Oberflächenabschnitt unter Verwendung eines zusätzlichen Verbindungsmittels. 9 a method for producing an electrical connection between an electrically conductive connection element and the basis of the 7A to 7E explained surface to be protected using an additional bonding agent.

10 einen Teilschritt eines Verfahrens, bei dem die Schutzschicht nach dem Herstellen der stoffschlüssigen Verbindung mittels eines Laserstrahls von dem zu schützenden Oberflächenabschnitt entfernt wird. 10 a sub-step of a method in which the protective layer is removed after the production of the material connection by means of a laser beam from the surface to be protected.

In den Figuren bezeichnen gleiche Bezugszeichen gleiche Elemente mit gleicher Funktion. Soweit nicht anders erläutert können die in den verschiedenen Figuren gezeigten Elemente, Merkmale, Verfahren und Verfahrensschritte auf beliebige Weise miteinander kombiniert werden, sofern sich diese nicht gegenseitig ausschließen. In the figures, like reference numerals designate like elements with like function. Unless otherwise stated, the elements, features, methods and method steps shown in the various figures can be combined with each other in any manner, provided that they are not mutually exclusive.

1A zeigt einen ersten Fügepartner 1. Dieser weist eine erste Verbindungsfläche 11 auf, sowie einen zu schützenden Oberflächenabschnitt 12. In dem gezeigten Beispiel ist der erste Fügepartner 1 als Trägersubstrat 6 für elektrische Bauelemente ausgebildet. Das Trägersubstrat 6 umfasst einen elektrisch isolierenden Isolationsträger 60, beispielsweise eine Keramik, auf dessen Oberseite eine obere Metallisierung 61 aufgebracht ist, die optional strukturiert sein kann, so dass sie voneinander beabstandete Metallisierungsabschnitte 611, 612 aufweist. In dem gezeigten Beispiel werden die erste Verbindungsfläche 11 durch einen ersten Metallisierungsabschnitt 611 und der zu schützende Oberflächenabschnitt 12 durch einen zweiten Metallisierungsabschnitt 612 der oberseitigen Metallisierungsschicht 61 bereitgestellt. Optional kann der Isolationsträger 60 auch auf seiner der oberseitigen Metallisierungsschicht 61 abgewandten Seite mit einer unterseitigen Metallisierungsschicht 62 versehen sein. Die oberseitige Metallisierungsschicht 61 und/oder – sofern vorgesehen – die unterseitige Metallisierungsschicht 62 können beispielsweise aus Kupfer, einer Kupferlegierung, Aluminium, einer Aluminiumlegierung, aber auch jedem anderen Metall bestehen. Beispielsweise kann es sich bei dem Substrat 6 um ein DCB-Substrat (direct copper bonding), ein DAB-Substrat (direct aluminum bonding) oder ein AMB-Substrat (activ metal brazing) handeln. 1A shows a first joining partner 1 , This has a first connection surface 11 on, as well as a surface to be protected 12 , In the example shown, the first joining partner 1 as a carrier substrate 6 designed for electrical components. The carrier substrate 6 comprises an electrically insulating insulating support 60 , For example, a ceramic, on top of which an upper metallization 61 is applied, which may optionally be structured so that they have spaced metallization sections 611 . 612 having. In the example shown, the first interface becomes 11 through a first metallization section 611 and the surface portion to be protected 12 through a second metallization section 612 the topside metallization layer 61 provided. Optionally, the insulation carrier 60 also on its top side metallization layer 61 opposite side with a bottom metallization layer 62 be provided. The topside metallization layer 61 and / or - if provided - the bottom metallization layer 62 may for example consist of copper, a copper alloy, aluminum, an aluminum alloy, but also any other metal. For example, the substrate may be 6 a direct copper bonding (DCB) substrate, a direct aluminum bonding (DAB) substrate, or an activ metal brazing substrate (AMB).

Nach dem Bereitstellen des in 1A gezeigten Substrats 6 wird auf dieses eine Schutzschicht 3 aufgebracht, und zwar derart, dass zumindest der zu schützende Oberflächenabschnitt 12 vollständig von der Schutzschicht 3 bedeckt ist. In dem gezeigten Beispiel soll später eine elektrisch leitende Verbindung zwischen dem zu schützenden Oberflächenabschnitt 12 und einem elektrisch leitenden Anschlusselement hergestellt werden. After providing the in 1A shown substrate 6 is on this one protective layer 3 applied, in such a way that at least the surface portion to be protected 12 completely from the protective layer 3 is covered. In the example shown will later be an electrically conductive connection between the surface to be protected 12 and an electrically conductive connection element.

Die erste Verbindungsfläche 11 dient dazu, eine stoffschlüssige Verbindung mit einer zweiten Verbindungsfläche eines zweiten Fügepartners herzustellen. Falls wie in dem Beispiel gemäß 1B gezeigt die erste Verbindungsfläche 11 von der Schutzschicht 3 bedeckt ist, muss diese vor der Herstellung der stoffschlüssigen Verbindung wieder von der ersten Verbindungsfläche 11 entfernt werden, was im Folgenden beispielhaft anhand der 1C bis 1G erläutert wird. Hierzu können prinzipiell verschiedenste Verfahren eingesetzt werden. Wesentlich ist in jedem Fall, dass die Schutzschicht 3 von der ersten Verbindungsfläche 11 entfernt wird, während sie auf den zu schützenden Oberflächenabschnitt 12 verbleibt, so dass der zu schützende Oberflächenabschnitt 12 während der nachfolgenden Herstellung einer stoffschlüssigen Verbindung zwischen der ersten Kontaktfläche 1 und einer zweiten Kontaktfläche eines zweiten Fügepartners durch die Schutzschicht 3 geschützt bleibt. The first interface 11 serves to produce a material connection with a second connection surface of a second joining partner. If, as in the example according to 1B shown the first interface 11 from the protective layer 3 is covered, this must be before the production of the material connection again from the first interface 11 be removed, which in the following example by way of 1C to 1G is explained. In principle, a wide variety of methods can be used for this purpose. It is essential in any case that the protective layer 3 from the first interface 11 is removed while standing on the surface to be protected 12 remains so that the surface portion to be protected 12 during the subsequent production of a material connection between the first contact surface 1 and a second contact surface of a second joining partner through the protective layer 3 remains protected.

Bei dem vorliegenden Beispiel wird gemäß 1C auf die Schutzschicht 3 eine Fotolackschicht 81, beispielsweise aus einem Positiv-Fotolack, aufgebracht und nachfolgend mit Hilfe von Licht 9 selektiv belichtet, was in 1D gezeigt ist. Wesentlich hierbei ist, dass bei der selektiven Belichtung zumindest der auf dem zu schützenden Oberflächenabschnitt 12 befindliche Teil der Fotolackschicht 81 belichtet wird, nicht jedoch der auf der ersten Verbindungsfläche 11 befindliche Abschnitt der Fotolackschicht 81. In the present example, according to 1C on the protective layer 3 a photoresist layer 81 , For example, from a positive photoresist applied and subsequently with the aid of light 9 selectively exposed what is in 1D is shown. It is essential here that, in the case of selective exposure, at least the surface section to be protected 12 located part of the photoresist layer 81 is exposed, but not on the first interface 11 located portion of the photoresist layer 81 ,

Anstelle eines Positiv-Fotolacks kann auch ein Negativ-Fotolack verwendet werden. In diesem Fall müsste zumindest der auf der ersten Verbindungsfläche 11 befindliche Abschnitt der Schutzschicht 3 belichtet werden, während der auf dem zu schützenden Oberflächenabschnitt 12 befindliche Abschnitt der Schutzschicht 3 nicht belichtet würde. Instead of a positive photoresist, a negative photoresist can also be used. In this case, at least the one on the first interface would have to 11 located portion of the protective layer 3 be exposed while on the surface to be protected 12 located portion of the protective layer 3 would not be exposed.

Im Falle eines Positiv-Fotolacks würden nachfolgend die unbelichteten Abschnitte der Fotolackschicht 81 entfernt, im Fall eines Negativ-Fotolacks die belichteten Abschnitte. In jedem Fall kann das Entfernen durch nasschemisches oder trockenchemisches Ätzen erfolgen. Die Ätzung kann selektiv gegenüber der Schutzschicht 3 vorgenommen werden, so dass die Fotolackschicht 81 nach dem Ätzvorgang eine strukturierte Maske darstellt, die im Bereich der ersten Verbindungsfläche 11 eine Öffnung aufweist, wie dies im Ergebnis in 1E gezeigt ist. Diese strukturierte Maskenschicht 81 kann dann als Maske für einen nachfolgenden weiteren Ätzprozess verwendet werden, in dem der auf der ersten Verbindungsfläche 11 befindliche Abschnitt der Schutzschicht 3 entfernt wird, was im Ergebnis in 1F gezeigt ist. In the case of a positive photoresist, the unexposed portions of the photoresist layer would subsequently become 81 removed, in the case of a negative resist the exposed portions. In any case, the removal can be carried out by wet-chemical or dry chemical etching. The etching can be selective to the protective layer 3 be made so that the photoresist layer 81 after the etching process represents a structured mask, which in the Area of the first interface 11 has an opening, as shown in the result 1E is shown. This structured mask layer 81 can then be used as a mask for a subsequent further etching process, in which the on the first connection surface 11 located portion of the protective layer 3 is removed, which results in 1F is shown.

Alternativ kann dazu kann das Entfernen des auf der ersten Verbindungsfläche 11 befindlichen Abschnittes der Fotolackschicht 81 und das Entfernen des auf der ersten Verbindungsfläche befindlichen Abschnitts der Schutzschicht 3 in einem gemeinsamen Nass- oder Trockenätzschritt erfolgen, was im Ergebnis wieder zu der in 1F gezeigten Anordnung führt. Alternatively, this may include removing the on the first interface 11 located portion of the photoresist layer 81 and removing the portion of the protective layer located on the first connection surface 3 be carried out in a common wet or dry etching step, which as a result returns to the in 1F shown arrangement leads.

Nach dem selektiven Entfernen der Schutzschicht 3 von der ersten Verbindungsfläche 11 kann optional die Fotolackschicht 81 vollständig entfernt werden, was im Ergebnis in 1G gezeigt ist. Alternativ dazu könnte die strukturierte Fotolackschicht 81 jedoch auch auf der darunter befindlichen Schutzschicht 3 verbleiben. After selectively removing the protective layer 3 from the first interface 11 Optionally, the photoresist layer 81 be completely removed, which results in 1G is shown. Alternatively, the patterned photoresist layer could 81 but also on the underlying protective layer 3 remain.

Wie weiterhin in 1H gezeigt ist, wird dann ein zweiter Fügepartner 2, in dem gezeigten Beispiel ein Halbleiterchip 5, beispielsweise ein IGBT, ein MOSFET, ein JFET, ein Thyristor, eine Diode oder ein beliebiges anderes Halbleiterbauelement, bereitgestellt. Das Halbleiterbauelement 5 besitzt einen Halbleiterkörper 50, der auf seiner Unterseite mit einer unteren Metallisierungsschicht 52 versehen ist, sowie auf seiner der Unterseite 50 entgegengesetzten Oberseite mit einer optionalen oberen Metallisierungsschicht 51. Bei der unteren Metallisierungsschicht 52 kann es sich beispielsweise um eine Drainmetallisierung, eine Sourcemetallisierung, eine Emittermetallisierung, eine Kollektormetallisierung, eine Anodenmetallisierung oder eine Kathodenmetallisierung handeln. In jedem Fall weist der zweite Fügepartner 2 eine zweite Verbindungsfläche 21 auf, die in dem gezeigten Beispiel durch eine Oberfläche der unteren Metallisierungsschicht 52 bereitgestellt wird. As continues in 1H is shown, then becomes a second joining partner 2 , in the example shown a semiconductor chip 5 For example, an IGBT, a MOSFET, a JFET, a thyristor, a diode, or any other semiconductor device is provided. The semiconductor device 5 has a semiconductor body 50 standing on its underside with a lower metallization layer 52 is provided, as well as on its bottom 50 opposite top with an optional top metallization layer 51 , At the lower metallization layer 52 it may be, for example, a drain metallization, a source metallization, an emitter metallization, a collector metallization, an anode metallization, or a cathode metallization. In any case, the second joining partner 2 a second interface 21 in the example shown, through a surface of the lower metallization layer 52 provided.

Zwischen der ersten Verbindungsfläche 11 und der zweiten Verbindungsfläche 21 wird nun eine stoffschlüssige Verbindung hergestellt, was nachfolgend unter Bezugnahme auf die 1J bis 1M erläutert wird. Zur Herstellung der Verbindung wird, wie in 1J gezeigt ist, ein Verbindungsmittel 15 auf die erste Verbindungsfläche 11 und/oder auf die zweite Verbindungsfläche 21 aufgetragen. Bei dem Verbindungsmittel 15 kann es sich beispielsweise um eine Paste handeln, die ein Metallpulver und ein Lösungsmittel enthält, oder um einen elektrisch leitenden oder nicht elektrisch leitenden Kleber, um ein Lot oder jedes beliebige andere Verbindungsmittel. Danach wird der zweite Fügepartner 2 auf den ersten Fügepartner 1 aufgesetzt und zwar derart, dass die erste Verbindungsfläche 11 und die zweite Verbindungsfläche 21 einander gegenüberliegen und zwar so, dass das Verbindungsmittel 15 zwischen der ersten Verbindungsfläche 11 und der zweiten Verbindungsfläche 21 angeordnet ist und sowohl die erste Verbindungsfläche 11 als auch die zweite Verbindungsfläche 21 kontaktiert. Between the first interface 11 and the second connection surface 21 Now, a cohesive connection is made, which is described below with reference to the 1y to 1M is explained. To make the connection, as in 1y is shown, a connecting means 15 on the first interface 11 and / or on the second interface 21 applied. In the connection means 15 it may be, for example, a paste containing a metal powder and a solvent, or an electrically conductive or non-electrically conductive adhesive, a solder, or any other bonding agent. Then the second joining partner 2 on the first joint partner 1 placed in such a way that the first connection surface 11 and the second connection surface 21 face each other in such a way that the connecting means 15 between the first interface 11 and the second connection surface 21 is arranged and both the first connection surface 11 as well as the second interface 21 contacted.

Danach werden, wie in 1K gezeigt ist, der erste Fügepartner 1 und der zweite Fügepartner 2 mit einem vorgegebenen Anpressdruck p aneinander gepresst, so dass das Verbindungsmittel 15 komprimiert wird. Außerdem können optional das Verbindungsmittel 15 und, ebenfalls optional, auch der erste Fügepartner 1 und/oder der zweite Fügepartner 2 bei einem anliegenden Anpressdruck p auf eine vorgegebene Temperatur T erwärmt werden. Wie in 1L gezeigt ist, kann das Verbindungsmittel 15 für einige Zeit sowohl der vorgegebenen Temperatur T als auch dem vorgegebenen Anpressdruck p ausgesetzt sein, wodurch eine stoffschlüssige Verbindung zwischen dem ersten Fügepartner 1 und dem zweiten Fügepartner 2 entsteht. Allerdings können die Verbindungen auch ohne oder nur bei geringer Druckeinwirkung sowie ohne oder nur bei geringer Temperatureinwirkung hergestellt werden. In jedem Fall ist der zu schützende Oberflächenabschnitt 12 während dieses Fügevorgangs durch die Schutzschicht 3 vor Kontaminationen 30 geschützt. Die Kontaminationen 30 werden durch die Schutzschicht 3 von dem zu schützenden Oberflächenabschnitt 12 abgehalten und/oder in der Schutzschicht 3 gebunden. After that, as in 1K is shown, the first joint partner 1 and the second joining partner 2 pressed together with a predetermined contact pressure p, so that the connecting means 15 is compressed. In addition, optionally, the connecting means 15 and, optionally, also the first joining partner 1 and / or the second joining partner 2 be heated to a predetermined temperature T at an applied contact pressure p. As in 1L is shown, the connecting means 15 be exposed for some time, both the predetermined temperature T and the predetermined contact pressure p, creating a material connection between the first joining partner 1 and the second joint partner 2 arises. However, the compounds can also be prepared without or only at low pressure and without or only at low temperature. In any case, the surface portion to be protected is 12 during this joining process through the protective layer 3 against contamination 30 protected. The contaminations 30 be through the protective layer 3 from the surface portion to be protected 12 held and / or in the protective layer 3 bound.

Nach der Herstellung dieser stoffschlüssigen Verbindung wird zumindest der auf dem zu schützenden Oberflächenabschnitt 12 befindliche Abschnitt der Schutzschicht 3 entfernt, was beispielsweise mit Hilfe eines Nass- oder Trockenätzverfahrens erfolgen kann. Dabei werden auch die Kontaminationen 30, soweit diese in der Schutzschicht 3 gebunden sind, mit entfernt. 1M zeigt die Anordnung nach dem Entfernen der Schutzschicht 3 zumindest von dem zu schützenden Oberflächenabschnitt 12. After the production of this cohesive connection, at least the surface to be protected on the surface 12 located portion of the protective layer 3 removed, which can be done for example by means of a wet or dry etching. In the process, the contaminations become too 30 as far as these are in the protective layer 3 are bound with removed. 1M shows the arrangement after removal of the protective layer 3 at least of the surface portion to be protected 12 ,

Der nun freiliegende zu schützende Oberflächenabschnitt 12 kann jetzt elektrisch leitend mit einem elektrisch leitenden Verbindungselement 7 verbunden werden, was in 2 am Beispiel eines elektrisch leitenden Anschlusselementes 7 gezeigt ist, das unmittelbar, d. h. ohne zusätzliches Verbindungsmittel wie beispielsweise in Lot, eine gesinterte Paste oder einen elektrisch leitenden Kleber, elektrisch leitend mit der zu schützenden Oberfläche 12 verbunden wird. Das Anschlusselement 7 kann beispielsweise als Bonddraht ausgebildet sein, der durch ein Drahtbondverfahren, beispielsweise durch Ultraschallbonden, Wedgebonden, Thermosonic Bonden, mit dem zu schützenden Oberflächenabschnitt 12 verbunden wird. Ebenso kann es sich bei dem Anschlusselement 7 um ein elektrisch leitendes Anschlussblech oder ein flaches Bändchen handeln, das durch Ultraschallschweißen oder durch ein anderes Schweißverfahren wie beispielsweise Laserstrahlschweißen oder Lichtbogenschweißen, mit dem zu schützenden Oberflächenabschnitt 12 verbunden wird. The now exposed surface section to be protected 12 can now be electrically conductive with an electrically conductive connection element 7 be connected, what in 2 the example of an electrically conductive connection element 7 is shown directly, ie without additional bonding agent such as solder, a sintered paste or an electrically conductive adhesive, electrically conductive with the surface to be protected 12 is connected. The connection element 7 may be formed, for example, as a bonding wire, by a Drahtbondverfahren, for example by ultrasonic bonding, Wedgebonden, Thermosonic bonding, with the surface to be protected section 12 is connected. Likewise it can be at the connection element 7 to act an electrically conductive connection plate or a flat ribbon, by ultrasonic welding or by another welding method such as laser beam welding or arc welding, with the surface to be protected 12 is connected.

Alternativ dazu kann, wie in 3 gezeigt ist, auch ein Verbindungsmittel 71 eingesetzt werden, um eine elektrisch leitende Verbindung zwischen einem elektrisch leitenden Anschlusselement 7 und dem zu schützenden Oberflächenabschnitt 12 herzustellen. Bei dem Verbindungsmittel 71 kann es sich beispielsweise um ein Lot, eine gesinterte, metallhaltige Paste oder einen elektrisch leitenden Kleber handeln. Das Anschlusselement 7 kann beispielsweise als gestanztes und optional gewinkeltes Blech ausgebildet sein, oder als Stift oder Pin, der als elektrisch leitendes Anschlusselement 7 verwendet wird. Alternatively, as in 3 is shown, also a connecting means 71 be used to form an electrically conductive connection between an electrically conductive connection element 7 and the surface portion to be protected 12 manufacture. In the connection means 71 it may be, for example, a solder, a sintered metal-containing paste or an electrically conductive adhesive. The connection element 7 For example, it can be formed as a stamped and optionally angled sheet metal, or as a pin or pin which serves as an electrically conductive connection element 7 is used.

Nachfolgend wird anhand der 4A bis 4F ein weiteres Verfahren zum Herstellen einer stoffschlüssigen Verbinden zweier Fügepartner 1, 2 und zum nachfolgenden Herstellen einer elektrisch leitenden Verbindung eines elektrisch leitenden Anschlusselements 7 mit einem zu schützenden Oberflächenabschnitt 12 eines der Fügepartner 1, 2 erläutert. Hierzu wird zunächst ein Wafer 100 bereitgestellt, der mehrere Halbleiterchips 5 enthält, die sich noch im Waferverbund befinden, was in 4A gezeigt ist. Wie weiter in 4B gezeigt ist, wird auf diesen Wafer 100 eine Schutzschicht 3 aufgebracht, die die Halbleiterchips 5 überdeckt. Die Halbleiterchips 5 sind in 4B lediglich gestrichelt dargestellt, da sie von der Schutzschicht 3 verdeckt sind. Das Aufbringen der Schutzschicht 3 kann der herkömmlichen Waferprozessierung als zusätzlicher Schritt hinzugefügt werden. Nach dem Aufbringen der Schutzschicht 3 werden die im Waferverbund befindlichen Halbleiterchips 5 zusammen mit der auf den Wafer 100 aufgebrachten Schutzschicht 3 vereinzelt, so dass auf jedem der vereinzelten Halbleiterchips 5 ein Abschnitt der Schutzschicht 3 verbleibt. The following is based on the 4A to 4F Another method for producing a material connection of two joining partners 1 . 2 and for subsequently producing an electrically conductive connection of an electrically conductive connection element 7 with a surface section to be protected 12 one of the joining partners 1 . 2 explained. For this purpose, first a wafer 100 provided, the several semiconductor chips 5 contains, which are still in the wafer composite, what in 4A is shown. As in further 4B is shown on this wafer 100 a protective layer 3 applied to the semiconductor chips 5 covered. The semiconductor chips 5 are in 4B only shown in dashed lines, as they are from the protective layer 3 are covered. The application of the protective layer 3 can be added to conventional wafer processing as an additional step. After applying the protective layer 3 become the semiconductor chips in the wafer composite 5 along with the on the wafer 100 applied protective layer 3 isolated, leaving on each of the isolated semiconductor chips 5 a section of the protective layer 3 remains.

4C zeigt in vergrößerter Darstellung einen Querschnitt durch einen der bereits vereinzelten Halbleiterchips 5 in einer in 4B dargestellten Schnittebene E1–E1. Wie hier zu erkennen ist, wird durch das Vereinzeln der Halbleiterchips 5 auch die Schutzschicht 3 vereinzelt. Diese Schutzschicht 3 bedeckt die bei diesem Ausführungsbeispiel obligatorische obere Chipmetallisierung 51 und damit auch den durch die obere Chipmetallisierung 51 bereitgestellten, zu schützenden Oberflächenabschnitt 12. Im Übrigen entspricht der Aufbau des Halbleiterbauelements 5 dem Aufbau des anhand von 1H erläuterten Halbleiterchips 5. Abweichend von den vorangehenden Ausführungsbeispielen der 1A bis 1M, 2 und 3 ist bei diesem Ausführungsbeispiel der erste Fügepartner 1 durch den Halbleiterchip 5 gegeben. Die erste Verbindungsfläche 11 wird durch die untere Chipmetallisierung 52 bereitgestellt, der zu schützende Oberflächenabschnitt 12 durch die obere Chipmetallisierung 51. 4C shows an enlarged view of a cross section through one of the already isolated semiconductor chips 5 in an in 4B shown section plane E1-E1. As can be seen here, by singulating the semiconductor chips 5 also the protective layer 3 sporadically. This protective layer 3 covers the top chip metallization required in this embodiment 51 and with it also through the upper chip metallization 51 provided surface section to be protected 12 , Incidentally, the structure of the semiconductor device corresponds 5 the structure of the basis of 1H explained semiconductor chips 5 , Notwithstanding the preceding embodiments of the 1A to 1M . 2 and 3 is the first joining partner in this embodiment 1 through the semiconductor chip 5 given. The first interface 11 is through the bottom chip metallization 52 provided, the surface portion to be protected 12 through the upper chip metallization 51 ,

Nach dem Bereitstellen eines zweiten Fügepartners 2, der beispielhaft als Substrat 6 ausgebildet ist, wie es vorangehend unter Bezugnahme auf 1A erläutert wurde, wird eine stoffschlüssige Verbindung zwischen der ersten Verbindungsfläche 11 des ersten Fügepartners 1 und einer zweiten Verbindungsfläche 21 des zweiten Fügepartners 2 hergestellt. Hierzu wird wieder ein Verbindungsmittel 15 auf die erste Verbindungsfläche 11 und/oder auf die zweite Verbindungsfläche 21 aufgebracht. Als Verbindungsmittel 15 eignen sich die bereits unter Bezugnahme auf 1J erläuterten Verbindungsmittel 15. After providing a second joining partner 2 which exemplifies a substrate 6 is formed as described above with reference to 1A has been explained, a cohesive connection between the first connection surface 11 of the first joining partner 1 and a second connection surface 21 of the second joining partner 2 produced. This is again a connecting means 15 on the first interface 11 and / or on the second interface 21 applied. As connecting means 15 are already with reference to 1y explained connecting means 15 ,

Danach wird der erste Fügepartner 1 derart auf den zweiten Fügepartner 2 aufgesetzt, dass die erste Verbindungsfläche 11 und die zweite Verbindungsfläche 21 einander gegenüberliegen und das Verbindungsmittel 15 derart zwischen der ersten Verbindungsfläche 11 und der zweiten Verbindungsfläche 21 angeordnet ist, dass es diese jeweils kontaktiert. Die Schutzschicht 3 befindet sich damit auf der dem zweiten Fügepartner abgewandten Seite des ersten Fügepartners 1. Then the first joining partner 1 so on the second joint partner 2 put on that first connection surface 11 and the second connection surface 21 opposite each other and the connecting means 15 such between the first connection surface 11 and the second connection surface 21 is arranged to contact each of them. The protective layer 3 is thus located on the side facing away from the second joint partner of the first joint partner 1 ,

Danach werden der erste Fügepartner 1 und der zweite Fügepartner 2 mit einem vorgegebenen Anpressdruck p aneinander gepresst, so dass das Verbindungsmittel 15 komprimiert wird. Außerdem wird zumindest das Verbindungsmittel 15 und optional auch der erste Fügepartner 1 und/oder der zweite Fügepartner 2 auf eine vorgegebene Temperatur T erwärmt, und zwar derart, dass das Verbindungsmittel 15 für eine gewisse Zeit zugleich dem vorgegebenen Anpressdruck p und der vorgegebenen Temperatur T ausgesetzt ist, was in 4E veranschaulicht ist. Then the first joint partner 1 and the second joining partner 2 pressed together with a predetermined contact pressure p, so that the connecting means 15 is compressed. In addition, at least the connecting means 15 and optionally also the first joining partner 1 and / or the second joining partner 2 heated to a predetermined temperature T, in such a way that the connecting means 15 for a certain time at the same time the predetermined contact pressure p and the predetermined temperature T is exposed, which in 4E is illustrated.

Durch die Einwirkung des Anpressdrucks p und der Temperatur T wird eine stoffschlüssige Verbindung zwischen dem ersten Fügepartner 1 und dem zweiten Fügepartner 2 ausgebildet. Nach Herstellung dieser stoffschlüssigen Verbindung kann die Schutzschicht 3 zumindest von dem zu schützenden Oberflächenabschnitt 12 entfernt werden, so dass dieser freiliegt. Zum Entfernen kann ein nasschemisches oder trockenchemisches Ätzverfahren eingesetzt werden. 4F zeigt die Anordnung nach dem Entfernen der Schutzschicht 3 von dem zu schützenden Oberflächenabschnitt 12. By the action of the contact pressure p and the temperature T, a cohesive connection between the first joining partner 1 and the second joint partner 2 educated. After preparation of this cohesive connection, the protective layer 3 at least of the surface portion to be protected 12 be removed so that it is exposed. For removal, a wet-chemical or dry-chemical etching process can be used. 4F shows the arrangement after removal of the protective layer 3 from the surface portion to be protected 12 ,

Zwischen dem nun freiliegenden zu schützenden Oberflächenabschnitt 12 und einem elektrisch leitenden Anschlusselement 7 kann nun eine elektrisch leitende Verbindung hergestellt werden. Es können hier dieselben Verbindungselemente 7 und dieselben Verbindungstechniken eingesetzt werden, wie sie bereits vorangehend unter Bezugnahme auf 2 erläutert wurden. 5 zeigt die Anordnung nach dem Herstellen einer elektrisch leitenden Verbindung zwischen dem zu schützenden Oberflächenabschnitt 12 und einem Verbindungselement 7, das die zu schützende Oberfläche 12 unmittelbar kontaktiert. Wie bei der Anordnung gemäß 2 kontaktiert das Anschlusselement 7 die zu schützende Oberfläche 12 unmittelbar und ohne Verwendung eines zusätzlichen Verbindungsmittels wie beispielsweise eines Lots, eines Klebers oder einer gesinterten Paste. Between the now exposed surface to be protected 12 and an electrically conductive connection element 7 can now one electrically conductive connection can be made. It can here the same fasteners 7 and the same connection techniques as previously described with reference to 2 were explained. 5 shows the arrangement after making an electrically conductive connection between the surface portion to be protected 12 and a connecting element 7 that the surface to be protected 12 contacted directly. As in the arrangement according to 2 contacts the connection element 7 the surface to be protected 12 directly and without the use of an additional bonding agent such as a solder, an adhesive or a sintered paste.

Alternativ dazu ist es jedoch ebenso möglich, ein elektrisch leitendes Anschlusselement 7 mit Hilfe eines Verbindungsmittels 71 elektrisch leitend mit der zu schützenden Oberfläche 12 zu verbinden, wie dies im Ergebnis in 6 gezeigt ist. Es können dieselben, bereits unter Bezugnahme auf 3 erläuterten elektrisch leitenden Anschlusselemente, Verbindungsmittel 71 und Verbindungstechniken verwendet werden. Alternatively, however, it is also possible, an electrically conductive connection element 7 with the help of a lanyard 71 electrically conductive with the surface to be protected 12 as result in in 6 is shown. It may be the same, already with reference to 3 explained electrically conductive connection elements, connecting means 71 and joining techniques are used.

Ein weiteres Ausführungsbeispiel wird nun noch anhand der 7A bis 7E erläutert. Hierzu werden ein erster Fügepartner 1, der beispielhaft als Halbleiterchip 5 ausgebildet ist, und ein zweiter Fügepartner 2, der beispielhaft als Substrat 6 ausgebildet ist, bereitgestellt. Das Substrat 6 kann ebenso aufgebaut sein, wie das vorangehend unter Bezugnahme auf 1A erläuterte Substrat 6. Der Halbleiterchip 5 kann ebenso aufgebaut sein, wie der vorangehend unter Bezugnahme auf 1H erläuterte Halbleiterchip 5. Another embodiment will now be based on the 7A to 7E explained. This will be a first joint partner 1 which exemplifies a semiconductor chip 5 is formed, and a second joining partner 2 which exemplifies a substrate 6 is formed, provided. The substrate 6 may be constructed as described above with reference to 1A explained substrate 6 , The semiconductor chip 5 may be constructed as described above with reference to 1H explained semiconductor chip 5 ,

Zwischen einer ersten Verbindungsfläche 11 des ersten Fügepartners 1 und einer zweiten Verbindungsfläche 21 des zweiten Fügepartners 2 wird nachfolgend eine stoffschlüssige Verbindung hergestellt. In dem gezeigten Beispiel wird die erste Verbindungsfläche 11 durch die untere Chipmetallisierung 52 bereitgestellt und die zweite Verbindungsfläche 21 durch die oberseitige Metallisierungsschicht 61 des Substrats 6. Zur Herstellung der stoffschlüssigen Verbindung wird ein Verbindungsmittel 15, das ebenso aufgebaut sein kann, wie das vorangehend unter Bezugnahme auf 1J erläuterte Verbindungsmittel 15, auf die erste Verbindungsfläche 11 und/oder auf die zweite Verbindungsfläche 21 aufgebracht, was im Ergebnis in 7A gezeigt ist. Between a first connection surface 11 of the first joining partner 1 and a second connection surface 21 of the second joining partner 2 Subsequently, a cohesive connection is made. In the example shown, the first interface becomes 11 through the lower chip metallization 52 provided and the second interface 21 through the topside metallization layer 61 of the substrate 6 , To produce the cohesive connection is a connecting means 15 , which may be constructed as described above with reference to 1y explained connecting means 15 , on the first interface 11 and / or on the second interface 21 what's up in the result 7A is shown.

Wie aus diesem Beispiel ebenfalls hervorgeht, kann nicht nur der erste Fügepartner 1 einen zu schützenden Oberflächenabschnitt 12 aufweisen, sondern auch der zweite Fügepartner 2 kann einen zu schützenden Oberflächenabschnitt 22 besitzen. Dies gilt prinzipiell nicht nur für das Verbinden eines Halbleitechips 5 mit einem Substrat 6, sondern für das Verbinden beliebiger Fügepartner 1, 2. As can also be seen from this example, not only the first joining partner can 1 a surface section to be protected 12 but also the second joining partner 2 can be a surface section to be protected 22 have. This applies in principle not only for the connection of a semiconductor chip 5 with a substrate 6 , but for the connection of any joining partners 1 . 2 ,

Wie weiterhin in 7B dargestellt ist, wird dann der erste Fügepartner 1 auf den zweiten Fügepartner 2 aufgesetzt, und zwar derart, dass die erste Verbindungsfläche 11 und die zweite Verbindungsfläche 21 einander gegenüberliegen und das Verbindungsmittel 15 zwischen der ersten Verbindungsfläche 11 und der zweiten Verbindungsfläche 21 angeordnet ist und diese jeweils kontaktiert. Das Verbindungsmittel 15 bewirkt, dass der erste Fügepartner 1 an dem zweiten Fügepartner 2 anhaftet, und zwar vor der Ausbildung der eigentlichen stoffschlüssigen Verbindung zwischen dem ersten Fügepartner 1 und dem zweiten Fügepartner 2. Im Sinne der vorliegenden Erfindung besteht der Unterschied zwischen einer Anhaftung und einer stoffschlüssigen Verbindung in der Abzugskraft, die erforderlich ist, um den ersten Fügepartner 1 von dem zweiten Fügepartner 2 zu trennen. Demgemäß wird davon ausgegangen, dass dann eine Anhaftung aber keine stoffschlüssige Verbindung vorliegt, wenn die Abzugskraft zum Abziehen des ersten Fügepartners 1 vom zweiten Fügepartner 2 senkrecht zur zweiten Verbindungsfläche 21 kleiner ist als 50 N. As continues in 7B is shown, then becomes the first joint partner 1 on the second joint partner 2 placed, in such a way that the first connection surface 11 and the second connection surface 21 opposite each other and the connecting means 15 between the first interface 11 and the second connection surface 21 is arranged and these each contacted. The connecting means 15 causes the first mating partner 1 at the second joint partner 2 adheres, and that before the formation of the actual cohesive connection between the first joining partner 1 and the second joint partner 2 , For the purposes of the present invention, the difference between an adhesion and a cohesive connection in the withdrawal force, which is required to the first joining partner 1 from the second joint partner 2 to separate. Accordingly, it is assumed that then an adhesion but no cohesive connection is present when the withdrawal force to remove the first joining partner 1 from the second joint partner 2 perpendicular to the second interface 21 less than 50 N.

Wie weiterhin in 7C gezeigt ist, wird dann eine Schutzschicht 3 auf den zu schützenden Oberflächenabschnitt 12 und einen weiteren zu schützenden Oberflächenabschnitt 22 aufgebracht. Danach werden der erste Fügepartner 1 und der zweite Fügepartner 2 mit einem vorgegebenen Anpressdruck p aneinander gepresst, so dass das Verbindungsmittel 15 komprimiert wird. Außerdem werden das Verbindungsmittel 15 und optional auch der erste Fügepartner 1 und/oder der zweite Fügepartner 2 bei einwirkendem Anpressdruck p für eine gewisse Zeit auf eine vorgegebene Temperatur T erwärmt, wodurch eine stoffschlüssige Verbindung zwischen dem ersten Fügepartner 1 und dem zweiten Fügepartner 2 entsteht. As continues in 7C is shown, then becomes a protective layer 3 on the surface to be protected 12 and another surface to be protected 22 applied. Then the first joint partner 1 and the second joining partner 2 pressed together with a predetermined contact pressure p, so that the connecting means 15 is compressed. In addition, the connecting means 15 and optionally also the first joining partner 1 and / or the second joining partner 2 heated at a given contact pressure p for a certain time to a predetermined temperature T, whereby a cohesive connection between the first joining partner 1 and the second joint partner 2 arises.

Nach der Herstellung dieser stoffschlüssigen Verbindung kann die Schutzschicht 3 zumindest von dem ersten zu schützenden Oberflächenabschnitt 12 und dem weiteren zu schützenden Oberflächenabschnitt 22 entfernt werden. Das Entfernen kann beispielsweise durch chemisches Nass- oder Trockenätzen erfolgen, beispielsweise mittels einer Behandlung mit einem Sauerstoffplasma. Sofern die Gefahr besteht, dass es durch das Sauerstoffplasma zu einer ungewünschten Oxidation von Teilen der bearbeiteten Baugruppe kommt, kann das entstandene Oxid anschließend durch eine Behandlung der beiden Fügepartner 1, 2 mit einem Wasserstoff-Plasma oder einem Wasserstoff-Argon-Plasma entfernt werden. Im Fall einer 7E zeigt die Anordnung nach dem Entfernen der Schutzschicht 3. After the preparation of this cohesive connection, the protective layer 3 at least from the first surface portion to be protected 12 and the other surface to be protected 22 be removed. The removal can be carried out, for example, by wet or dry chemical etching, for example by means of a treatment with an oxygen plasma. If there is a risk that unwanted oxidation of parts of the processed assembly may occur due to the oxygen plasma, the resulting oxide may subsequently be treated by treatment of the two joining partners 1 . 2 be removed with a hydrogen plasma or a hydrogen-argon plasma. In the case of one 7E shows the arrangement after removal of the protective layer 3 ,

Im Weiteren können der zu schützende Oberflächenabschnitt 12 und der weitere zu schützende Oberflächenabschnitt 22 elektrisch leitend mit demselben oder aber mit verschiedenen elektrisch leitenden Anschlusselementen 7 verbunden werden, was im Folgenden anhand der 8 und 9 beispielhaft für eine Verbindung mit demselben Anschlusselement 7 erläutert wird. In addition, the surface to be protected section 12 and the further surface to be protected 22 electrically conductive with the same or with different electrically conductive connection elements 7 be connected to what follows below on the basis of 8th and 9 exemplary for a connection with the same connection element 7 is explained.

Bei dem Beispiel gemäß 8 kontaktiert das Anschlusselement 7 den zu schützenden Oberflächenabschnitt 12 und/oder den weiteren zu schützenden Oberflächenabschnitt 22 unmittelbar und ohne Verwendung eines zusätzlichen Verbindungsmittels wie beispielsweise eines Lotes, eines Klebers oder einer gesinterten Paste. Das Anschlusselement 7 und die verwendete Verbindungstechnik können identisch sein mit dem vorangehend unter Bezugnahme auf 2 erläuterten Anschlusselement 7 und den dort erläuterten Verbindungstechniken. In the example according to 8th contacts the connection element 7 the surface to be protected 12 and / or the further surface portion to be protected 22 directly and without the use of an additional bonding agent such as a solder, an adhesive or a sintered paste. The connection element 7 and the connection technique used may be identical to that described above with reference to FIG 2 explained connection element 7 and the connection techniques explained there.

Ebenso ist es jedoch möglich, ein elektrisch leitendes Anschlusselement 7 unter Verwendung eines zusätzlichen Verbindungsmittels 71 mit dem ersten zu schützenden Oberflächenabschnitt 12 und/oder mit dem weiteren zu schützenden Oberflächenabschnitt 22 stoffschlüssig zu verbinden. Als Anschlusselement 7 und als Verbindungsmittel 71 können die vorangehend unter Bezugnahme auf 3 erläuterten Anschlusselemente 7 bzw. Verbindungsmittel 71 eingesetzt werden. However, it is also possible, an electrically conductive connection element 7 using an additional bonding agent 71 with the first surface section to be protected 12 and / or with the further surface portion to be protected 22 cohesively connect. As a connection element 7 and as a connecting means 71 may be referred to above with reference to 3 explained connection elements 7 or connecting means 71 be used.

Vorangehend wurde anhand verschiedener Ausführungsbeispiele erläutert, wie auf einen ersten zu schützenden Oberflächenabschnitt 12 und/oder einen weiteren zu schützenden Oberflächenabschnitt 22 eines ersten Fügepartners 1 bzw. eines zweiten Fügepartners 2 eine Schutzschicht 3 aufgebracht und die Fügepartner 1, 2 bei aufgebrachter Schutzschicht 3 stoffschlüssig miteinander verbunden werden können. Danach wurde die Schutzschicht 3 von den zu schützenden Oberflächenabschnitten 12 bzw. 22 entfernt. Das Aufbringen der Schutzschicht kann bei allen Ausgestaltungen der Erfindung beispielsweise mit Hilfe eines PVD-Verfahrens erfolgen (PVD = physical vapor deposition), z. B. durch Bedampfen, durch Elektronenstrahlverdampfen, durch Laserstrahlverdampfen, durch Lichtbogenverdampfen, durch Molekularstrahlepitaxie, durch Sputtern oder durch Ionenplattieren erfolgen. The foregoing has been explained with reference to various exemplary embodiments, such as a first surface section to be protected 12 and / or another surface section to be protected 22 a first joining partner 1 or a second joining partner 2 a protective layer 3 applied and the joining partners 1 . 2 with applied protective layer 3 can be connected cohesively to each other. After that, the protective layer became 3 from the surface sections to be protected 12 respectively. 22 away. The application of the protective layer can be carried out in all embodiments of the invention, for example by means of a PVD process (PVD = physical vapor deposition), z. B. by vapor deposition, by electron beam evaporation, by laser beam evaporation, by arc evaporation, by molecular beam epitaxy, by sputtering or by ion plating.

Bei einer Schutzschicht 3 im Sinne der vorliegenden Erfindung kann es sich beispielsweise um eine Nitridschicht, eine Imidschicht, eine Lackschicht, eine Schicht aus diamantartigem Kohlenstoff (DLC-Schicht; DLC = diamond-like carbon), oder um eine Graphitschicht handeln. For a protective layer 3 For the purposes of the present invention, it may be, for example, a nitride layer, an imide layer, a lacquer layer, a layer of diamond-like carbon (DLC layer, DLC = diamond-like carbon), or a graphite layer.

Wie abschließend noch in 10 beispielhaft ausgehend von der Anordnung gemäß 1L gezeigt ist, kann das Entfernen der Schutzschicht 3 zumindest von dem zu schützenden Oberflächenabschnitt nach dem Herstellen der stoffschlüssigen Verbindung zwischen dem ersten Fügepartner 1 und dem zweiten Fügepartner 2 auch mittels eines Laserstrahls 8 erfolgen. Dabei ist es ausreichend, wenn die Schutzschicht 3 nur lokal entfernt wird. As concluding in 10 by way of example, starting from the arrangement according to FIG 1L can be shown, the removal of the protective layer 3 at least of the surface portion to be protected after producing the integral connection between the first joining partner 1 and the second joint partner 2 also by means of a laser beam 8th respectively. It is sufficient if the protective layer 3 only removed locally.

Soweit vorangehend zur Herstellung einer stoffschlüssigen Verbindung zwischen einem ersten Fügepartner 1 und einem zweiten Fügepartner 2 eine Sinterverbindung eingesetzt wird, zu deren Herstellung das Verbindungsmittel 15 als Paste mit einem Metallpulver und einem Lösungsmittel eingesetzt wird, kann der vorgegebene Druck p beispielsweise im Bereich von 0 MPa bis 30 MPa liegen, und die vorgegebene Temperatur T beispielsweise im Bereich von 150°C bis 280°C. Der Druck p und die Temperatur T können gleichzeitig für eine Dauer von wenigstens 60 sec auf das Verbindungsmittel 15 einwirken. Bei dem Metallpulver kann es sich zum Beispiel um ein Silberpulver handeln, das in Form von feinen Körnern oder in Form von flachen Flocken vorliegt.As far as above for producing a cohesive connection between a first joining partner 1 and a second joining partner 2 a sintered compound is used, for their preparation, the connecting means 15 is used as a paste with a metal powder and a solvent, the predetermined pressure p, for example, in the range of 0 MPa to 30 MPa, and the predetermined temperature T, for example in the range of 150 ° C to 280 ° C. The pressure p and the temperature T can simultaneously on the connecting means for a period of at least 60 seconds 15 act. The metal powder may be, for example, a silver powder in the form of fine grains or in the form of flat flakes.

Claims (17)

Verfahren zur Herstellung einer stoffschlüssigen Verbindung zwischen einem ersten Fügepartner (1) und einem zweiten Fügepartner (2) mit folgenden Schritten: Bereitstellen eines ersten Fügepartners (1), der eine erste Verbindungsfläche (11) aufweist, sowie einen von der ersten Verbindungsfläche (11) verschiedenen, zu schützenden Oberflächenabschnitt (12); Bereitstellen eines zweiten Fügepartners (2), der eine zweite Verbindungsfläche (21) aufweist; Aufbringen einer Schutzschicht (3) auf den zu schützenden Oberflächenabschnitt (12) derart, dass der zu schützende Oberflächenabschnitt (12) vollständig von der Schutzschicht (3) bedeckt ist; Herstellen einer stoffschlüssigen Verbindung zwischen der ersten Verbindungsfläche (11) und der zweiten Verbindungsfläche (21) in einem Zustand, in dem die Schutzschicht (3) aufgebracht ist; zumindest teilweises Entfernen der Schutzschicht (3) von dem zu schützenden Oberflächenabschnitt (12) nach dem Herstellen der stoffschlüssigen Verbindung. Method for producing a material connection between a first joining partner ( 1 ) and a second joint partner ( 2 ) with the following steps: Providing a first joining partner ( 1 ), which has a first interface ( 11 ), as well as one from the first interface ( 11 ) different surface to be protected ( 12 ); Provision of a second joining partner ( 2 ), which has a second interface ( 21 ) having; Applying a protective layer ( 3 ) on the surface to be protected ( 12 ) such that the surface portion to be protected ( 12 ) completely from the protective layer ( 3 ) is covered; Producing a material connection between the first connection surface ( 11 ) and the second interface ( 21 ) in a state in which the protective layer ( 3 ) is applied; at least partial removal of the protective layer ( 3 ) of the surface portion to be protected ( 12 ) after producing the cohesive connection. Verfahren nach Anspruch 1, bei dem das Herstellen der stoffschlüssigen Verbindung folgende Schritte umfasst: Aneinanderpressen des ersten Fügepartners (1) und des zweiten Fügepartners (2) mit einem vorgegebenen Anpressdruck (p) derart, dass eine Paste (15), die ein Metallpulver und ein Lösungsmittel enthält und die zwischen der ersten Verbindungsfläche (11) und der zweiten Verbindungsfläche (21) angeordnet wird, sowohl die erste Verbindungsfläche (1) als auch die zweite Verbindungsfläche (2) kontaktiert, und Sintern der Paste (15) bei einer vorgegebenen Temperatur der Paste (15) bei anliegendem Anpressdruck (p). The method of claim 1, wherein the production of the material connection comprises the following steps: pressing together of the first joining partner ( 1 ) and the second joining partner ( 2 ) with a predetermined contact pressure (p) such that a paste ( 15 ) which contains a metal powder and a solvent and which between the first bonding surface ( 11 ) and the second interface ( 21 ), both the first interface ( 1 ) as well as the second interface ( 2 ), and Sintering the paste ( 15 ) at a predetermined temperature of the paste ( 15 ) at applied contact pressure (p). Verfahren nach Anspruch 2, bei dem die vorgegebene Temperatur größer ist als 150°C und/oder kleiner ist als 280°C.  A method according to claim 2, wherein the predetermined temperature is greater than 150 ° C and / or less than 280 ° C. Verfahren nach Anspruch 2 oder 3, bei dem der vorgegebene Anpressdruck größer ist als 0 MPa absolut und/oder kleiner als 30 MPa absolut.  The method of claim 2 or 3, wherein the predetermined contact pressure is greater than 0 MPa absolute and / or less than 30 MPa absolute. Verfahren nach einem der vorangehenden Ansprüche, bei dem das Aufbringen der Schutzschicht (3) derart erfolgt, dass sie über den gesamten zu schützenden Oberflächenabschnitt (12) bündig an diesem anliegt. Method according to one of the preceding claims, in which the application of the protective layer ( 3 ) is carried out in such a way that it extends over the entire surface section ( 12 ) is flush with this. Verfahren nach einem der vorangehenden Ansprüche, bei dem das Aufbringen der Schutzschicht (3) durch ein PVD-Verfahren erfolgt. Method according to one of the preceding claims, in which the application of the protective layer ( 3 ) by a PVD method. Verfahren nach einem der vorangehenden Ansprüche, bei dem die Schutzschicht (3) als eine der folgenden Schichten ausgebildet ist oder eine der folgenden Schichten aufweist: eine Nitridschicht; eine Imidschicht; eine Lackschicht; eine diamantartige Kohlenstoffschicht (DLC-Schicht); eine Graphitschicht. Method according to one of the preceding claims, in which the protective layer ( 3 ) is formed as one of the following layers or has one of the following layers: a nitride layer; an imide layer; a varnish layer; a diamond-like carbon layer (DLC layer); a graphite layer. Verfahren nach Anspruch 7, bei dem das zumindest teilweise Entfernen der Schutzschicht (3) erfolgt, indem die Schutzschicht (3) durch Trockenätzen oder durch Plasmaätzen oder durch Nassätzen oder durch Laserablation oder durch Behandlung mit einem Sauerstoffplasma vollständig von dem ersten Fügepartner (1) entfernt wird; oder die Schutzschicht (3) unter Verwendung einer zuvor auf die Schutzschicht (3) aufgebrachten und strukturierten Maskenschicht (4) durch Trockenätzen oder durch Plasmaätzen oder durch Nassätzen teilweise aber nicht vollständig von dem ersten Fügepartner (1) entfernt wird; oder die Schutzschicht (3) durch Laserablation teilweise aber nicht vollständig von dem ersten Fügepartner (1) entfernt wird. Method according to claim 7, in which the at least partial removal of the protective layer ( 3 ) takes place by the protective layer ( 3 ) by dry etching or by plasma etching or by wet etching or by laser ablation or by treatment with an oxygen plasma completely from the first joining partner ( 1 ) Will get removed; or the protective layer ( 3 ) using a previously on the protective layer ( 3 ) applied and structured mask layer ( 4 ) by dry etching or by plasma etching or by wet etching partly but not completely from the first joint partner ( 1 ) Will get removed; or the protective layer ( 3 ) by laser ablation partly but not completely from the first joining partner ( 1 ) Will get removed. Verfahren nach einem der Ansprüche 1 bis 6, bei dem die Schutzschicht (3) als Positiv-Fotolackschicht oder als Negativ-Fotolackschicht ist, die entweder nach dem Herstellen der stoffschlüssigen Verbindung durch Trockenätzen oder durch Plasmaätzen oder durch Nassätzen oder durch Laserablation vollständig von dem ersten Fügepartner (1) entfernt wird; oder nach dem Herstellen der stoffschlüssigen Verbindung fotolithographisch derart strukturiert wird, dass der zu schützende Oberflächenabschnitt (12) frei liegt. Method according to one of Claims 1 to 6, in which the protective layer ( 3 ) is in the form of a positive photoresist layer or of a negative photoresist layer which is completely removed from the first joining partner either after the cohesive connection by dry etching or by plasma etching or by wet etching or by laser ablation. 1 ) Will get removed; or photolithographically structured in such a way after the material-bonding connection has been produced that the surface section to be protected ( 12 ) is free. Verfahren nach einem der vorangehenden Ansprüche, bei dem der erste Fügepartner (1) als Substrat (6) ausgebildet ist, das eine metallische Oberfläche aufweist, und der zweite Fügepartner (2) als Halbleiterchip (5). Method according to one of the preceding claims, in which the first joining partner ( 1 ) as substrate ( 6 ) is formed, which has a metallic surface, and the second joining partner ( 2 ) as a semiconductor chip ( 5 ). Verfahren nach Anspruch 10, bei dem der Halbleiterchip (5) eine obere Chipmetallisierung (51) und eine untere Chipmetallisierung (52) aufweist, wobei die obere Chipmetallisierung (51) nach dem Herstellen der stoffschlüssigen Verbindung an der dem Substrat (6) abgewandten Seite des Halbleiterchips (5) angeordnet ist; die untere Chipmetallisierung (52) nach dem Herstellen der stoffschlüssigen Verbindung an der dem Substrat (6) zugewandten Seite des Halbleiterchips (5) angeordnet ist; die erste Verbindungsfläche (11) durch einen Oberflächenabschnitt der unteren Chipmetallisierung (52) gebildet ist; und der zu schützende Oberflächenabschnitt (12) durch einen Oberflächenabschnitt der metallischen Oberfläche des Substrats (6) gebildet ist. Method according to Claim 10, in which the semiconductor chip ( 5 ) an upper chip metallization ( 51 ) and a lower chip metallization ( 52 ), wherein the upper chip metallization ( 51 ) after the material connection has been established on the substrate ( 6 ) facing away from the semiconductor chip ( 5 ) is arranged; the lower chip metallization ( 52 ) after the material connection has been established on the substrate ( 6 ) facing side of the semiconductor chip ( 5 ) is arranged; the first interface ( 11 ) through a surface portion of the lower chip metallization ( 52 ) is formed; and the surface portion to be protected ( 12 ) through a surface portion of the metallic surface of the substrate ( 6 ) is formed. Verfahren nach einem der Ansprüche 1 bis 9, bei dem der erste Fügepartner (1) als Halbleiterchip (5) ausgebildet ist und der zweite Fügepartner (2) als Substrat (6), das eine metallische Oberfläche aufweist. Method according to one of Claims 1 to 9, in which the first joining partner ( 1 ) as a semiconductor chip ( 5 ) and the second joining partner ( 2 ) as substrate ( 6 ) having a metallic surface. Verfahren nach Anspruch 12, bei dem der Halbleiterchip (5) eine obere Chipmetallisierung (51) und eine untere Chipmetallisierung (52) aufweist, wobei die obere Chipmetallisierung (51) nach dem Herstellen der stoffschlüssigen Verbindung an der dem Substrat (6) abgewandten Seite des Halbleiterchips (5) angeordnet ist; die untere Chipmetallisierung (52) nach dem Herstellen der stoffschlüssigen Verbindung an der dem Substrat (6) zugewandten Seite des Halbleiterchips (5) angeordnet ist; die erste Verbindungsfläche (11) durch einen Oberflächenabschnitt der unteren Chipmetallisierung (52) gebildet ist; und der zu schützende Oberflächenabschnitt (12) durch einen Oberflächenabschnitt der oberen Chipmetallisierung (51) gebildet ist. Method according to Claim 12, in which the semiconductor chip ( 5 ) an upper chip metallization ( 51 ) and a lower chip metallization ( 52 ), wherein the upper chip metallization ( 51 ) after the material connection has been established on the substrate ( 6 ) facing away from the semiconductor chip ( 5 ) is arranged; the lower chip metallization ( 52 ) after the material connection has been established on the substrate ( 6 ) facing side of the semiconductor chip ( 5 ) is arranged; the first interface ( 11 ) through a surface portion of the lower chip metallization ( 52 ) is formed; and the surface portion to be protected ( 12 ) through a surface portion of the upper chip metallization ( 51 ) is formed. Verfahren nach Anspruch 12 oder 13, bei dem das Aufbringen der Schutzschicht (3) zu einem Zeitpunkt erfolgt, zu dem sich der Halbleiterchip (5) im Waferverbund mit weiteren Halbleiterchips (5) befindet. Method according to Claim 12 or 13, in which the application of the protective layer ( 3 ) occurs at a time when the semiconductor chip ( 5 ) in the wafer composite with further semiconductor chips ( 5 ) is located. Verfahren zur Herstellung einer elektrischen Verbindung, das die folgenden Schritte umfasst: Bereitstellen eines elektrisch leitenden Anschlusselementes (7); Herstellen einer stoffschlüssigen Verbindung zwischen einem ersten Fügepartner (1) und einem zweiten Fügepartner (2) nach einem der vorangehenden Ansprüche; Herstellen einer elektrisch leitenden Verbindung zwischen dem elektrisch leitenden Anschlusselement (7) und dem zu schützenden Oberflächenabschnitt (12) nach dem zumindest teilweisen Entfernen der Schutzschicht (3) von dem zu schützenden Oberflächenabschnitt (12). Method for producing an electrical connection, comprising the following steps: providing an electrically conductive connecting element ( 7 ); Producing a material connection between a first joining partner ( 1 ) and a second joint partner ( 2 ) according to any one of the preceding claims; Producing an electrically conductive connection between the electrically conductive connection element ( 7 ) and the surface to be protected ( 12 ) after the at least partial removal of the protective layer ( 3 ) of the surface portion to be protected ( 12 ). Verfahren nach Anspruch 15, bei dem das elektrisch leitende Anschlusselement (7) als Bonddraht ausgebildet ist; das Herstellen der elektrisch leitenden Verbindung dadurch erfolgt, dass der Bonddraht durch Drahtbonden an den zu schützenden Oberflächenabschnitt (12) gebondet wird, so dass der Bonddraht den zu schützenden Oberflächenabschnitt (12) kontaktiert. Method according to Claim 15, in which the electrically conductive connecting element ( 7 ) is formed as a bonding wire; the electrically conductive connection is produced by bonding the bonding wire to the surface section to be protected by wire bonding ( 12 ) is bonded so that the bonding wire the surface to be protected ( 12 ) contacted. Verfahren nach Anspruch 15, bei dem das elektrisch leitende Anschlusselement (7) als Metallblech ausgebildet ist; das Herstellen der elektrisch leitenden Verbindung dadurch erfolgt, dass das Metallblech an den zu schützenden Oberflächenabschnitt (12) gelötet, gesintert, geschweißt, ultraschallgeschweißt, oder elektrisch leitend geklebt wird. Method according to Claim 15, in which the electrically conductive connecting element ( 7 ) is formed as a metal sheet; the electrically conductive connection is produced by the metal sheet being pressed against the surface section ( 12 ) is soldered, sintered, welded, ultrasonically welded, or glued electrically conductive.
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