CN107393975A - The method of diffusion of silicon chip and preparation method thereof, silicon chip - Google Patents
The method of diffusion of silicon chip and preparation method thereof, silicon chip Download PDFInfo
- Publication number
- CN107393975A CN107393975A CN201710641698.9A CN201710641698A CN107393975A CN 107393975 A CN107393975 A CN 107393975A CN 201710641698 A CN201710641698 A CN 201710641698A CN 107393975 A CN107393975 A CN 107393975A
- Authority
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- China
- Prior art keywords
- silicon chip
- wool
- making herbs
- oxide layer
- chip body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 170
- 239000010703 silicon Substances 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 title claims abstract description 16
- 235000008216 herbs Nutrition 0.000 claims abstract description 82
- 210000002268 wool Anatomy 0.000 claims abstract description 82
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910021418 black silicon Inorganic materials 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 12
- 239000000243 solution Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a kind of silicon chip and preparation method thereof, the method for diffusion of silicon chip.Above-mentioned silicon chip includes：Silicon chip body；Making herbs into wool layer, it is formed at by making herbs into wool on silicon chip body；And oxide layer, positioned at the both sides of silicon chip body, and it is covered on making herbs into wool layer.Compared with the silicon chip after traditional making herbs into wool; covered with oxide layer on the silicon chip body and making herbs into wool layer of the above-mentioned silicon chip of the present invention; silicon chip body and making herbs into wool layer are played a very good protection; the surface of silicon chip body after making herbs into wool can be made not to be contaminated in long-time storage and transportation, be advantageous to apply.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to the expansion of a kind of silicon chip and preparation method thereof, silicon chip
Dissipate method.
Background technology
In solar cell fabrication process, core component of the silicon chip as solar cell, its various performance parameters is straight
Connecing influences the generating efficiency of solar cell.The property of silicon chip surface and state directly affect junction characteristic processed before system knot, so as to shadow
Ring the performance of finished product solar cell.Cell silicon chip surface keeps good clean conditions, is favorably improved finished product solar-electricity
The generating efficiency in pond.
In the fabrication of a solar cell, general making herbs into wool and diffusion are respectively in different factories, it will usually first will system
Silicon chip after suede is deposited, and is transported again afterwards to other battery factories and is carried out battery later process.In this storage and transport
During, it is easy to pollute the surface of silicon chip, so as to influence the performance of follow-up solar cell, is unfavorable for applying.
The content of the invention
Based on this, it is necessary to be easy to contaminated problem for the surface of silicon chip after making herbs into wool, there is provided one kind can avoid
Contaminated silicon chip in the surface of silicon chip and preparation method thereof, the method for diffusion of silicon chip after making herbs into wool.
A kind of silicon chip, including：
Silicon chip body；
Making herbs into wool layer, it is formed at by making herbs into wool on the silicon chip body；
And oxide layer, positioned at the both sides of the silicon chip body, and it is covered on the making herbs into wool layer.
Compared with the silicon chip after traditional making herbs into wool, covered with oxygen on the silicon chip body and making herbs into wool layer of above-mentioned silicon chip of the invention
Change layer, silicon chip body and making herbs into wool layer are played a very good protection, the surface of silicon chip body after making herbs into wool can be made for a long time
It is not contaminated in storage and transportation, is advantageous to apply.
In one of the embodiments, the thickness of the oxide layer is 5nm~50nm.
In one of the embodiments, the thickness of the oxide layer is 10nm~20nm.
A kind of preparation method of silicon chip, comprises the following steps：
Making herbs into wool is carried out to silicon chip body, to form making herbs into wool layer on the silicon chip body, obtains the silicon chip body after making herbs into wool；
And the silicon chip body after the making herbs into wool is aoxidized, with shape on the two sides of the silicon chip body after the making herbs into wool
Into oxide layer, silicon chip is obtained.
Using the obtained silicon chip of preparation method of the above-mentioned silicon chip of the present invention, oxygen is all covered with silicon chip body and making herbs into wool layer
Change layer, silicon chip body and making herbs into wool layer are played a very good protection, the surface of silicon chip body after making herbs into wool can be made for a long time
It is not contaminated in storage and transportation, is advantageous to apply.
In one of the embodiments, using ozone water solution or hydrogen peroxide solution to the silicon chip body after the making herbs into wool
Aoxidized.
In one of the embodiments, the concentration of the ozone water solution is 10ppm~100ppm.
In one of the embodiments, the preparation method of the silicon chip also includes：Silicon chip body after the making herbs into wool is entered
After row oxidation, it will be packed after the silicon chip body drying after oxidation.
In one of the embodiments, making herbs into wool is carried out to the silicon chip body using the black silicon technology of wet method.
A kind of method of diffusion of silicon chip, comprises the following steps：
Silicon chip is provided, the silicon chip includes silicon chip body, the making herbs into wool layer being formed on the silicon chip body and positioned at institute
State the both sides of silicon chip body and the oxide layer being covered on the making herbs into wool layer；
The oxide layer is removed, obtains the silicon chip after removing oxide layer；
And the silicon chip gone after removing oxide layer is diffused, the silicon chip after being spread.
In the method for diffusion of the silicon chip of the present invention, because silicon chip includes being covered in oxidation on silicon chip body and making herbs into wool layer
Layer, and oxide layer plays a very good protection to silicon chip body and making herbs into wool layer, can make the surface of silicon chip after making herbs into wool when long
Between storage and transportation in be not contaminated.Therefore, even if silicon chip is contaminated during storage or transport, go during diffusion
The pollution of silicon chip surface attachment can be removed while except above-mentioned oxide layer, is advantageous to apply.
In one of the embodiments, the operation for removing the oxide layer is：The silicon chip is entered using hydrofluoric acid solution
Row surface corrosion is handled, until removing the oxide layer.
Brief description of the drawings
Fig. 1 is the schematic diagram of the silicon chip of an embodiment；
Fig. 2 is the flow chart of the preparation method of the silicon chip of an embodiment；
Fig. 3 is the flow chart of the method for diffusion of the silicon chip of an embodiment.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
Fig. 1 is referred to, the silicon chip 100 of an embodiment includes silicon chip body 110, making herbs into wool layer 120 and oxide layer 130.
Wherein, silicon chip body 110 can be the body of the silicon chip without any processing, also or to be handled by twin polishing
Silicon chip afterwards.
Making herbs into wool layer 120 is formed on silicon chip body 110 by making herbs into wool.Making herbs into wool layer 120 is preferably nanoscale making herbs into wool layer, can
Reduce light reflection.
Oxide layer 130 is located at the both sides of silicon chip body 110, and is covered on making herbs into wool layer 120.Specifically, making herbs into wool layer 120 covers
It is placed on the upper surface of silicon chip body 110, oxide layer 130 is covered each by the upper surface of making herbs into wool layer 120 and silicon chip body 110
Lower surface, as shown in Figure 1.Wherein, the composition of oxide layer 130 is silica.Oxide layer 130 can play protection making herbs into wool layer
120 and the effect of silicon chip body 110, avoid making herbs into wool layer 120 and silicon chip body 110 dirty in long-time storage and transportation
Dye.
The thickness of oxide layer 130 is preferably 5nm~50nm.When the thickness of oxide layer 130 is preferably 5nm~50nm, one
Aspect, enough protective effects can be played to the making herbs into wool layer 120 inside oxide layer 130 and silicon chip body 110；On the other hand,
Avoid thickness too thick and extend the follow-up time for removing removing oxide layer 130.
More excellent, the thickness of oxide layer 130 is 10nm~20nm.When the thickness of oxide layer 130 is 10nm~20nm, effect
Fruit is best.
Compared with the silicon chip after traditional making herbs into wool, covered with oxygen on the silicon chip body and making herbs into wool layer of above-mentioned silicon chip of the invention
Change layer, silicon chip body and making herbs into wool layer are played a very good protection, the surface of silicon chip body after making herbs into wool can be made for a long time
It is not contaminated in storage and transportation, is advantageous to apply.
The flow chart of the preparation method of the silicon chip of an embodiment as shown in Figure 2, comprises the following steps：
S10, making herbs into wool is carried out to silicon chip body, to form making herbs into wool layer on silicon chip body, obtain the silicon chip body after making herbs into wool.
In making herbs into wool step, using dry etching or wet etching.Dry etching (also referred to as plasma etching) is handle
Silicon chip surface is exposed to caused plasma in air, and by the window outputed in photoresist with silicon chip thing occurs for plasma
Reason or chemical reaction, so as to remove exposed surfacing.Wet etching is chemically removed using liquid chemical reagent
The material of silicon chip surface.Nanoscale making herbs into wool layer is formed in silicon chip body surface after etching, light reflection can be reduced.
Preferably, making herbs into wool is carried out to silicon chip body using the black silicon technology of wet method.Using the black silicon technology of wet method to silicon chip body
After carrying out making herbs into wool, it may be necessary to deposit and be sent to other battery factories progress battery later process afterwards, and the silicon chip 100 of the present invention
Oxide layer 130 inside of silicon chip can just be protected, avoid polluting, be advantageous to apply.
Silicon chip body after S20, the making herbs into wool obtained to step S10 aoxidizes, with two of the silicon chip body after making herbs into wool
Oxide layer is formed on face, obtains silicon chip.Preferably, using ozone water solution or hydrogen peroxide solution to the silicon chip body after making herbs into wool
Aoxidized.The composition of obtained oxide layer is silica.
Ozone and hydrogen peroxide are capable of the organic matter pollution of Quick Oxidation silicon chip surface attachment, generate carbon dioxide and water,
To human body non-hazardous.And waste liquid environmental pollution is small caused by ozone water solution and hydrogen peroxide solution, it is not necessary to makees special place
Reason.
Wherein, the method for preparing ozone water solution is：Ozone gas is produced using ozone generator, by caused ozone gas
Body is dissolved in pure water, so as to obtain saturation ozone water solution by ozone dissolution equipment.Saturation ozone water solution is dissolved in into silicon chip
Rinsing bowl, the concentration of ozone water solution is adjusted according to technological requirement.
Preferably, the concentration of ozone water solution is 10ppm~100ppm.When ozone water solution concentration for 10ppm~
The oxide layer of densification can be obtained during 100ppm, after oxidation.
The method that ozone gas is persistently blasted into the aqueous solution can be used, to ensure that the concentration of ozone water solution maintains
The level needed is reacted, reactivity is ensure that, there is faster course of reaction, while there is higher reaction efficiency.
Preferably, the preparation method of silicon chip also includes：After being aoxidized to the silicon chip body after making herbs into wool, after oxidation
Packed after the drying of silicon chip body.After drying, obtained silicon chip is dry, that is to say, that the silicon chip of silicon chip
Body, making herbs into wool layer and oxide layer are dry.So be advantageous to storage and transport.
Using the obtained silicon chip of preparation method of the above-mentioned silicon chip of the present invention, oxygen is all covered with silicon chip body and making herbs into wool layer
Change layer, silicon chip body and making herbs into wool layer are played a very good protection, the surface of silicon chip body after making herbs into wool can be made for a long time
It is not contaminated in storage and transportation, is advantageous to apply.
The flow chart of the method for diffusion of the silicon chip of an embodiment as shown in Figure 3, comprises the following steps：
S100, silicon chip is provided, silicon chip includes silicon chip body, the making herbs into wool layer being formed on silicon chip body and positioned at silicon chip sheet
The both sides of body and the oxide layer being covered on making herbs into wool layer.
S200, removing oxide layer is removed, obtain the silicon chip after removing oxide layer.
The operation for removing removing oxide layer is：Surface corrosion processing is carried out to silicon chip using hydrofluoric acid solution, until removing oxidation
Layer.
Hydrofluoric acid solution can go out the metal pollution of silicon chip surface, and the oxide layer (two formed on corrosion of silicon making herbs into wool layer
Silica), therefore, it is possible to remove the pollution and particle of surface attachment while oxide layer is eroded.
S300, the silicon chip gone after removing oxide layer that step S200 is obtained is diffused, the silicon chip after being spread.
The purpose of diffusion is to form PN junction.In this step, conventional method of diffusion can be used to going after removing oxide layer
Silicon chip be diffused.
In the method for diffusion of the silicon chip of the present invention, because silicon chip includes being covered in oxidation on silicon chip body and making herbs into wool layer
Layer, and oxide layer plays a very good protection to silicon chip body and making herbs into wool layer, can make the surface of silicon chip after making herbs into wool when long
Between storage and transportation in be not contaminated.Therefore, even if silicon chip is contaminated during storage or transport, go during diffusion
The pollution of silicon chip surface attachment can be removed while except above-mentioned oxide layer, is advantageous to apply.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. silicon chip, it is characterised in that including：Silicon chip body；Making herbs into wool layer, it is formed at by making herbs into wool on the silicon chip body；And oxide layer, positioned at the both sides of the silicon chip body, and it is covered on the making herbs into wool layer.
- 2. silicon chip according to claim 1, it is characterised in that the thickness of the oxide layer is 5nm~50nm.
- 3. silicon chip according to claim 1 or 2, it is characterised in that the thickness of the oxide layer is 10nm~20nm.
- 4. a kind of preparation method of silicon chip, it is characterised in that comprise the following steps：Making herbs into wool is carried out to silicon chip body, to form making herbs into wool layer on the silicon chip body, obtains the silicon chip body after making herbs into wool；And the silicon chip body after the making herbs into wool is aoxidized, to form oxygen on the two sides of the silicon chip body after the making herbs into wool Change layer, obtain silicon chip.
- 5. the preparation method of silicon chip according to claim 4, it is characterised in that water-soluble using ozone water solution or dioxygen Liquid aoxidizes to the silicon chip body after the making herbs into wool.
- 6. the preparation method of silicon chip according to claim 5, it is characterised in that the concentration of the ozone water solution is 10ppm~100ppm.
- 7. the preparation method of silicon chip according to claim 4, it is characterised in that the preparation method of the silicon chip also includes： After being aoxidized to the silicon chip body after the making herbs into wool, it will be packed after the silicon chip body drying after oxidation.
- 8. the preparation method of silicon chip according to claim 4, it is characterised in that using the black silicon technology of wet method to the silicon chip Body carries out making herbs into wool.
- 9. a kind of method of diffusion of silicon chip, it is characterised in that comprise the following steps：Silicon chip is provided, the silicon chip includes silicon chip body, the making herbs into wool layer being formed on the silicon chip body and positioned at the silicon The both sides of piece body and the oxide layer being covered on the making herbs into wool layer；The oxide layer is removed, obtains the silicon chip after removing oxide layer；And the silicon chip gone after removing oxide layer is diffused, the silicon chip after being spread.
- 10. the method for diffusion of silicon chip according to claim 9, it is characterised in that the operation for removing the oxide layer is：Adopt Surface corrosion processing is carried out to the silicon chip with hydrofluoric acid solution, until removing the oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710641698.9A CN107393975A (en) | 2017-07-31 | 2017-07-31 | The method of diffusion of silicon chip and preparation method thereof, silicon chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710641698.9A CN107393975A (en) | 2017-07-31 | 2017-07-31 | The method of diffusion of silicon chip and preparation method thereof, silicon chip |
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| CN107393975A true CN107393975A (en) | 2017-11-24 |
Family
ID=60344067
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| CN201710641698.9A Pending CN107393975A (en) | 2017-07-31 | 2017-07-31 | The method of diffusion of silicon chip and preparation method thereof, silicon chip |
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| CN106057951A (en) * | 2016-07-27 | 2016-10-26 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Double-sided solar cell based on P type silicon substrate and preparation method thereof |
| CN106505126A (en) * | 2015-09-07 | 2017-03-15 | Imec 非营利协会 | The texturing of single crystal silicon substrate |
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2017
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| CN101156242A (en) * | 2005-04-11 | 2008-04-02 | 肖特股份公司 | Method for the production of enclosed electronic components, and enclosed electronic component |
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Application publication date: 20171124 |