DE102013106992A1 - Optoelectronic component, method for producing an optoelectronic component - Google Patents

Abstract

In various embodiments, an optoelectronic device (100) is provided, comprising the optoelectronic component (100): an optoelectronic component structure (102) having an organic functional layer structure (220), wherein the organic functional layer structure (220) for recording and / or or providing an electromagnetic radiation is set up; and a mirror structure (110); wherein the mirror structure (110) is formed in the beam path of the optoelectronic component structure (102) and has electrically switchable optical properties, and wherein the mirror structure (110) is structured such that the mirror structure (110) has a first area (118) and a first area second region (120), wherein the first region (118) and the second region (120) differ in at least one optoelectronic property; and wherein the first region (118) and the second region (120) are each formed in a flat continuous manner.

Description

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided.

An organic opto-electronic device, such as an OLED, may include an anode and a cathode having an organic functional layer system therebetween. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures each of two or more charge generating layers (CGL) Charge pair generation, and one or more electron block, also referred to as hole transport layer (HTL), and one or more Lochblockadeschichten, also referred to as electron transport layer (s) (ETL) to the To direct current flow. The color of the light emitted by an OLED can be determined as a color location in a CIE color standard panel. About the color location, a mood can be transported or the hormone levels of humans are affected. Cold-white light is therefore used in work environments, while the relaxing effect of warm white light in the living area is preferred.

As they become more widespread, OLEDs can be used to display information, such as illuminated signage. In operation, white RGB OLEDs may suffer from aging, which manifests itself in a change in optoelectronic properties, such as a shift in the color location of the light emitted by the OLED or an increase in the voltage drop across the OLED. A white RGB OLED can be understood to mean an OLED which emits white light and has a plurality of emitter layers which emit red light (R), green light (G) and blue light (B) per se.

During the electrical operation of a white OLED, thermal loading or sunlight irradiation of the OLED may result in differential aging of the emitters of the emitter layers. In this case, for example, one of the color components (eg red) experiences a greater fall in light than the other components (eg green and blue). As a result, the color location of the emitted light may change. For some applications, it is therefore desirable to be able to actively compensate for this visible, age-related color locus shift.

In a conventional method for active chromaticity control of an organic light emitting diode, a color-adjustable organic light-emitting diode product uses many adjacent monochromatic RGB strips (red-green-blue stripes) which can be driven separately. This method requires a considerable manufacturing effort, such as structuring effort.

In another conventional method of active color control, an organic light emitting diode structure is formed such that the color location of the emitted light is current density dependent. By means of suitable current pulses, more precisely by means of variation of current density and pulse width, a color locus shift is achieved within certain limits, which under certain circumstances can be used for the correction of an age-related color locus shift.

In another conventional method, an OLED has two differently colored organic light-emitting diodes. The two differently colored organic light emitting diodes can be stacked above or next to each other and controlled in different ways. By means of a separate control of the organic light emitting diodes, a color adjustment on the connecting line between the color locations of the organic light emitting diodes in the CIE diagram is possible.

In a further conventional method, an electrochromic layer is used on a white OLED in order to filter out a part of the color components via switchable spectral absorption of the electrochromic layer and thereby to change the color location of the overall system. At the same time, however, this process reduces component efficiency.

In another conventional method, the color locus of a light emitting diode with wavelength converter is controlled via a switchable reflector, wherein the wavelength converter is formed between the LED and the reflector. However, a color locus setting is only possible to a limited extent in this method since the wavelength converter is always pumped when the light-emitting diode is operated and the reflector behind it only slightly influences the total emission.

In another conventional method, an organic light emitting diode has a microcavity in which emitted monochromatic light is guided. The emission wavelength can be easily changed by changing the thickness of the microcavity by means of a piezoelectric layer. For a broad emission spectrum like However, a white OLED provides this structure almost no color change.

Organic-based optoelectronic devices, such as organic light emitting diodes (OLEDs), are finding widespread use in general lighting and informational rendering because of their increasing efficiency, lifetime, and the potential for large area lighting. However, the color aging of the OLED can affect the quality of information reproduction and the lifetime.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided, with which it is possible to display color-variable information.

An optoelectronic component can be understood to mean an embodiment of an electronic component, the optoelectronic component having an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region and / or a current through the optically active region.

In the context of this description, provision of electromagnetic radiation can be understood as meaning emission of electromagnetic radiation.

In the context of this description, absorption of electromagnetic radiation can be understood to mean absorption of electromagnetic radiation.

An optoelectronic component which has two planar, optically active sides can, for example, be transparent, for example as a transparent organic light-emitting diode.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive side, for example as an organic light-emitting diode, which is set up as a top emitter or bottom emitter.

An optoelectronic component which emits electromagnetic radiation may in various embodiments be a semiconductor device emitting electromagnetic radiation and / or as an electromagnetic radiation emitting diode, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as electromagnetic radiation be formed emitting organic transistor.

The electromagnetic radiation may, for example, be light in the visible range, UV radiation and / or infrared radiation.

In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor.

The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components can be provided, which are connected to one another, for example, electrically in series or in parallel.

In the context of this description, an organic substance can be understood as meaning a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean something which consists of constituents of two or more different substances whose constituents are, for example, distributed very finely. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

In the context of this description, a substance can be understood as the luminescent material which converts electromagnetic radiation of one wavelength loss loss into electromagnetic radiation of other wavelengths, for example longer wavelength (Stokes shift) or shorter wavelength (anti-Stokes shift), for example by means of phosphorescence or fluorescence. The energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation can be converted into phonons, that is, heat, and / or by emission of electromagnetic radiation having a wavelength as a function of the energy difference.

In various embodiments, a phosphor may include or be formed from any of the following: garnets or nitrides, silicates, nitrides, oxides, phosphates, borates, oxynitrides, sulfides, selenides, aluminates, tungstates, and halides of aluminum, silicon, magnesium, calcium , Barium, strontium, zinc, cadmium, manganese, indium, tungsten and other transition metals, or rare earth metals such as yttrium, gadolinium or lanthanum, with an activator such as copper, silver, aluminum, manganese, zinc, tin, lead, cerium , Terbium, titanium, antimony or europium. In various embodiments, the phosphor may be an oxide or (oxy) nitride phosphor such as garnet, orthosilicate, nitrido (alumo) silicate, nitride or nitrido orthosilicate, or a halide or halophosphate. Concrete examples of suitable phosphors are strontium chloroapatite: Eu ((Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu, SCAP), yttrium aluminum granite: cerium (YAG: Ce) or CaAlSiN ₃ : Eu. Furthermore, particles with light-scattering properties and / or auxiliaries may be contained in the phosphor or phosphor mixture, for example. Examples of adjuvants include surfactants and organic solvents. Examples of light scattering particles are gold, silver and metal oxide particles.

In various embodiments, a phosphor may include or be formed from any of the following: Ce ³⁺ doped garnets such as YAG: Ce and LuAG, for example (Y, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ; Eu ²⁺ doped nitrides, for example CaAlSiN ₃ : Eu ²⁺ , (Ba, Sr) ₂ Si ₅ N ₈ : Eu ²⁺ ; Eu ²⁺ doped sulfdides, SIONe, SiAlON, orthosilicates, for example (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ ; Chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate or be formed therefrom.

In the context of this description, a color of a light of a light can be understood to mean a wavelength range of an electromagnetic radiation associated with the color or color valence physiologically. In the context of this description, a color valence can be understood to mean a physiological, colored effect of an electromagnetic radiation. A color valence can be determined as an indistinguishable range of color locations (Cx, Cy) in a CIE color standard panel.

The term "translucent" or "translucent layer" may in various embodiments be understood to mean that a layer is transparent to light, for example for the light generated by the light-emitting component, for example one or more wavelength ranges, for example for light in a wavelength range of the visible Light (for example at least in a partial region of the wavelength range from 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that essentially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), in which case a portion of the light can be scattered For example, by the translucent layer having scattering centers.

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light (for example, at least in a subregion of the wavelength range of 380 nm to 780 nm), wherein in a structure (for example, a layer) coupled-in light is also coupled out without any scattering or light conversion from the structure (for example, layer).

In the event, for example, that a light-emitting monochrome or emission-limited electronic component is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochromatic light or for the limited emission spectrum.

In various embodiments, the optoelectronic component arrangement can be set up as a so-called top and bottom emitter. A top and / or bottom emitter can also be referred to as an optically transmissive component, for example a transparent or translucent organic light-emitting diode, with regard to one direction.

In various embodiments, an optoelectronic component is provided, comprising the optoelectronic component: an optoelectronic component structure having an organic functional layer structure, wherein the organic functional layer structure for receiving and / or providing a electromagnetic radiation is set up; and a mirror structure; wherein the mirror structure is formed in the optical path of the optoelectronic component structure and has electrically switchable optical properties, and wherein the mirror structure is structured such that the mirror structure has a first region and a second region, wherein the first region and the second region are in at least distinguish an optoelectronic property; and wherein the first region and the second region are formed in each case flatly connected.

In one embodiment, the mirror structure can furthermore have an optically inactive edge region.

In one embodiment, the optically inactive edge region may be formed as a frame. The frame may be formed, for example, as a mechanical support of the electrically switchable mirror structure.

In one embodiment, the first region may be electrically isolated from the second region.

In one embodiment, the mirror structure may be formed such that the first region is designed to be electrically insulating and the second region has electrically switchable optical properties.

In one embodiment, the electrically switchable mirror structure may comprise an electrically switchable second region and an optoelectrically inert, d. H. have an electrically non-switchable, first area.

In one embodiment, the first region may be formed as a hole in the second region, for example in the form of a mask. The hole may, for example, take the form of a pictogram, an ideogram or a lettering.

In one embodiment, the mirror structure can comprise or be formed from a liquid-crystalline substance, for example in a thermotropic phase or a lyotropic phase.

In one embodiment, the mirror structure may be formed such that the first region has a different liquid-crystalline phase than the second region.

In one embodiment, the mirror structure may be formed such that the first region has a different central optical orientation than the second region. The mean optical orientation may refer to the average orientation of the molecules in the respective region with respect to a common reference direction, for example by means of an orientation function.

In one embodiment, the mirror structure can be designed such that the first region has a different liquid-crystalline substance than the second region, for example also doped differently.

In one embodiment, the liquid-crystalline substance may be formed as a liquid-crystalline polymer.

In one embodiment, the liquid-crystalline polymer may have a different chain length in the first region than in the second region. Synonymous with the chain length, the degree of polymerization, the number of monomer units and / or the average molecular weight can be used as a reference.

In one embodiment, the mirror structure may be formed as an electrically switchable dichroic mirror. A dichroic mirror may also be formed as a dielectric mirror or photonic crystal.

In one embodiment, the mirror structure may comprise or be formed from a piezoelectric substance.

In one embodiment, the mirror structure may be formed such that the first region has different interference conditions than the second region, for example has a different piezoelectric behavior or a different layer thickness.

In one embodiment, the mirror structure may have cavities, the cavities being filled with a suspension liquid, wherein electrophoretically mobile particles are distributed in the suspension liquid.

In one embodiment, the mirror structure can be designed such that the first region has particles which have a different geometric shape than in the second region.

In one embodiment, the mirror structure may be configured such that the first region has particles which have a different color, a different color combination and / or reflectivity than in the second region. The particles may be formed, for example, as platelets, wherein the flat sides of a platelet differ in their color and / or reflectivity. A color combination of a platelet-shaped particle can, for example, as optical properties of the flat sides of the platelet-shaped particle are understood.

In one embodiment, the particles may be formed in the first region and in the second region such that one side of the particles has approximately the same optical properties.

In one embodiment, the mirror structure can be designed such that the first region has particles which have a different diameter than in the second region.

In one embodiment, the mirror structure may be formed such that the first region has a suspension liquid which has a different viscosity than in the second region.

In one embodiment, the mirror structure may be formed such that the first region has a different mass fraction of particles in the suspension than in the second region.

In one embodiment, the mirror structure may be configured such that the first region has differently shaped cavities than in the second region, for example conical cavities in the first region and cavities formed in the second spherically shaped one.

In one embodiment, the mirror structure may be configured such that the first region has different electrorheological properties than the second region. Different electrorheological properties can lead to different inertias in an alternating current operation of the optoelectronic component and thus to different switching times of the regions with one another.

In one embodiment, the electrically switchable mirror structure can comprise or be formed from a metal hydride, for example yttrium / lanthanum in combination with a zirconium oxide layer with H ₂ inclusions.

In one embodiment, the optoelectronic component can furthermore have a converter structure in the beam path of the optoelectronic component structure.

In one embodiment, the mirror structure may be formed between the optoelectronic component structure and the converter structure.

In one embodiment, the converter structure may be formed between the optoelectronic component structure and the mirror structure.

In one embodiment, the optoelectronic component structure may be formed between the converter structure and the mirror structure.

In one embodiment, the mirror structure may be formed as a mirror foil.

In one embodiment, the optoelectronic component may further comprise a second electrically switchable mirror structure, the second electrically switchable mirror structure being formed between the optoelectronic component structure and the first mirror structure or on the side of the optoelectronic component structure opposite the first electrically switchable mirror structure. As a result, different colors, color gradients and information can be displayed.

In one embodiment, the first electrically switchable mirror structure may be formed between a converter structure and the optoelectronic component structure, and a further converter structure may be formed between the first electrically switchable mirror structure and the second electrically switchable mirror structure.

In one embodiment, the electrically switchable mirror structure may have a first electrically switchable mirror structure and a second electrically switchable mirror structure, wherein the first electrically switchable mirror structure and the second electrically switchable mirror structure differ in at least one optoelectronic property and / or structuring.

In one embodiment, the first area and / or the second area may be in the form of a pictogram, an ideogram and / or a lettering.

In one embodiment, the optoelectronic component structure may be formed as an electroluminescent structure, for example as an organic light-emitting diode, an organic transistor or an organic photoconductor.

In one embodiment, the first region and / or the second region may each have two or more independent regions. The independent areas can, for example, be electrically switchable or controllable independently of each other.

In one embodiment, the first region and / or the second region may each have two or more different electrically switchable structures. The different regions may, for example, have optically different properties.

In one embodiment, the converter structure can be structured, for example flat in the form of a pictogram, an ideogram and / or a lettering.

In various embodiments, there is provided a method of making an optoelectronic device, the method comprising: providing an optoelectronic device structure having an organic functional layer structure, wherein the organic functional layer structure is configured to receive and / or provide electromagnetic radiation; and forming a mirror structure; wherein the mirror structure is formed in the beam path of the optoelectronic component structure and has electrically switchable optical properties, and wherein the mirror structure is structured such that the mirror structure has a first region and a second region, wherein the first region and the second region are in at least distinguish an optoelectronic property; and wherein the first region and the second region are each formed in a flat continuous manner.

In one embodiment of the method, the mirror structure can also be formed with an optically inactive edge region.

In one embodiment of the method, the optically inactive edge region can be formed as a frame.

In one embodiment of the method, the first region can be formed electrically insulated from the second region.

In one embodiment of the method, the mirror structure can be formed such that the first region is designed to be electrically insulating and the second region has electrically switchable optical properties.

In one embodiment of the method, the first region may be formed as a hole in the second region.

In one embodiment of the method, the mirror structure may comprise or be formed from a liquid-crystalline substance, for example in a thermotropic phase or a lyotropic phase.

In one embodiment of the method, the mirror structure can be formed such that the first region has a different liquid-crystalline phase than the second region.

In one embodiment of the method, the mirror structure can be formed such that the first region has a different average optical orientation than the second region.

In one embodiment of the method, the mirror structure can be formed such that the first region has a different liquid-crystalline substance than the second region.

In one embodiment of the method, the liquid-crystalline substance can be formed as a liquid-crystalline polymer.

In one embodiment of the method, the liquid-crystalline polymer may have a different chain length in the first region than in the second region.

In one embodiment of the method, the mirror structure can be formed as an electrically switchable dichroic mirror.

In one embodiment of the method, the mirror structure may comprise or be formed from a piezoelectric substance.

In one embodiment of the method, the mirror structure may be formed such that the first region has different interference conditions than the second region, for example a different piezoelectric behavior or a different layer thickness.

In one embodiment of the method, the mirror structure may have cavities, wherein the cavities are filled with a suspension liquid, wherein electrophoretically mobile particles are distributed in the suspension liquid.

In one embodiment of the method, the mirror structure can be formed such that the first region has particles which have a different geometric shape than in the second region.

In one configuration of the method, the mirror structure can be formed such that the first region has particles which have a different color, a different color combination and / or reflectivity than in the second region.

In one embodiment of the method, the particles in the first region and in the second region can be formed such that one side of the particles has approximately the same optical properties.

In one embodiment of the method, the mirror structure can be formed such that the first region has particles which have a different diameter than in the second region.

In one embodiment of the method, the mirror structure may be formed such that the first region has a suspension liquid which has a different viscosity than in the second region.

In one embodiment of the method, the mirror structure may be formed such that the first region has a different mass fraction of particles in the suspension than in the second region.

In one embodiment of the method, the mirror structure can be formed such that the first region has differently shaped cavities than in the second region.

In one embodiment of the method, the mirror structure may be formed such that the first region has different electrorheological properties than the second region.

In one configuration of the method, the mirror structure can furthermore have a converter structure in the beam path of the optoelectronic component structure.

In one embodiment of the method, the mirror structure can be formed between the optoelectronic component structure and the converter structure.

In one embodiment of the method, the converter structure can be formed between the optoelectronic component structure and the mirror structure.

In one embodiment of the method, the optoelectronic component structure can be formed between the converter structure and the mirror structure.

In one embodiment of the method, the mirror structure can be formed as a mirror foil.

In one configuration of the method, the mirror structure can furthermore have a second electrically switchable mirror structure, the second electrically switchable mirror structure being formed between the optoelectronic component structure and the first mirror structure or on the side of the optoelectronic component structure opposite the first electrically switchable mirror structure ,

In one embodiment of the method, the first area and / or the second area may be formed in the form of a pictogram.

In one embodiment of the method, the optoelectronic component structure can be formed as an electroluminescent structure, for example as an organic light-emitting diode, an organic transistor or an organic photoconductor.

In one embodiment of the method, the first region and / or the second region can each be formed with two or more independent regions.

In one embodiment of the method, the first region and / or the second region can be formed with two or more different electrically switchable structures.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1a , b is a schematic representation of an embodiment of an optoelectronic component;

2a , b are schematic representations of optoelectronic components, according to various embodiments;

3a , b are schematic representations of optoelectronic components, according to various embodiments; and

4a , b are schematic representations of optoelectronic components, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It will be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention departing. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims. A first layer and a second layer, both formed on or above a carrier, may be formed on the same or different side (s) of the carrier.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1a , b shows a schematic representation of an embodiment of an optoelectronic component.

Shown in 1a is an optoelectronic component structure 102 with contact pads 104 . 106 by means of which the optoelectronic component structure 102 with a first voltage source 108 electrically connected. Also shown is an electrically switchable mirror structure 110 by means of contact pads 112 . 114 with a second voltage source 116 electrically connected.

In various embodiments, the mirror structure 110 and the optoelectronic device structure 102 on or above a common carrier 122 be educated.

The electrically switchable mirror structure 110 can be structured such that a first area 118 and a second area 120 is trained.

In various embodiments, the mirror structure 110 have an optically inactive edge regions in which, for example, the contact pads 112 . 114 are formed.

The first area 118 and the second area 120 can be structured in various embodiments, for example in the form of a pictogram, an ideogram or a lettering, for example in the form of an arrow (shown).

In various embodiments, the electrically switchable, structured mirror structure 110 influence the field distribution of the radiation field of the electromagnetic radiation in the image plane of the optoelectronic component, that of the optoelectronic component structure 102 provided. As a result, for example, information can be displayed graphically, for example in the form of a pictogram. This pictogram, for example, can be switched on and off - shown in 1b ,

In various embodiments, by means of the structured, electrically switchable mirror structure 110 a variable information in the image plane of the optoelectronic component are represented, for example, differently shaped icons, color variable icons and / or aging-related color change of the icon can be compensated.

In various exemplary embodiments, the optoelectronic component may have a first operating mode and a second operating mode, wherein in the first operating mode the first voltage source 108 provides a first voltage and the second voltage source 116 provides a second voltage, and in the second operating mode, the first voltage source 108 provides a third voltage and the second voltage source 116 provides a fourth voltage.

In various embodiments, the first voltage may be approximately equal to the third voltage. The optoelectronic component structure 102 can provide approximately the same electromagnetic radiation in the first operating mode as in the second operating mode, for example, with an approximately same color locus.

In various embodiments, the second voltage may be different than the fourth voltage. As a result, the mirror structure can have other optical properties, for example a different reflectivity, for example polarization-dependent, whereby the field distribution of the electromagnetic radiation in the image plane of the optoelectronic component 102 can be changed. As a result, for example, the color location or the brightness of the electromagnetic radiation generated by the components structure 102 is provided, in the image plane of the optoelectronic component 100 be set and / or information, for example in the form of a pictogram are displayed. As a result, for example, an aging-related shift of the color location can be compensated.

In various exemplary embodiments, a pictogram may be visible in the first operating mode and not be shown in the second operating mode, for example because the beam path is within the optoelectronic Component has changed due to a changed reflectivity of the mirror structure 110 ,

The pictogram can be visible, for example, by means of a color location contrast, which is formed by means of the structured, electrically switchable mirror structure for the electromagnetic radiation in the image plane of the optoelectronic component 102 ,

The mirror structure 110 may be formed as a planar mirror structure, which may be laterally structured, for example, have a structuring in the surface.

Various embodiments of the optoelectronic component with different embodiments of the optoelectronic component structure 102 and the electrically switchable mirror structure 110 be in the descriptions of the 2a , Federation 3a , b shown.

In one embodiment, the optoelectronic device may further comprise a converter structure (not shown) that converts the electromagnetic radiation wavelength-wise from the opto-electronic device structure 102 is provided can be used.

In one embodiment, by means of the structured, electrically switchable mirror structure 110 in the beam path of the optoelectronic component structure 102 , in the image plane a green glowing arrow are formed.

For example, in one embodiment, the green glowing arrow may be in a first region of the optoelectronic device structure 102 from 2a or 3a are formed (not shown) in which the switchable reflector has a high reflection (R = 1) and thus the converter structure no contribution to the electromagnetic radiation in the image plane of the optoelectronic device 100 supplies. In the second area, for example, a second voltage on the mirror structure 110 abutment (not shown). The second voltage may be formed, for example, by means of another voltage source or with respect to the first range by means of another electrical resistance in series with the voltage source. As a result, for example, the reflection behavior of the second region with respect to the first region can be changed, for example, the mirror structure in the second region can be transmissive (R = 0). As a result, the converter structure to the total emitted electromagnetic radiation in the image plane of the optoelectronic component 102 contribute.

In various embodiments, the structured, electrically switchable mirror structure 110 be formed as an electrically switchable filter aperture, for example, limit the illumination field of the optoelectronic component, change the brightness and / or the color location of the electromagnetic radiation in the image plane of the optoelectronic component.

In one embodiment, the first region and the second region can be formed in that the electrically switchable mirror structure has a high surface resistance and is energized from the edge region. As a result, during operation at an applied voltage to the electrically switchable mirror structure, only part of the electrical current can flow in the direction of the center of the electrically switchable mirror structure and the optoelectronic properties can be changed. By changing the voltage on the mirror structure, in this embodiment, the dimension of the first region and the second region can be adjusted, for example, similar to an iris diaphragm.

In various embodiments, the optoelectronic component may have an optically inactive region. In the optically inactive region, for example, the contact pads 104 . 106 . 112 . 114 for electrically contacting the organic functional layer structure 220 be educated. In other words, in the geometric edge region, the optoelectronic component 100 be formed such that optically inactive contact pads 104 . 106 . 112 . 114 for electrically contacting the optoelectronic component 100 are formed, for example by electrically conductive layers or the like, in the region of the contact pads 104 . 106 . 112 . 114 at least partially exposed (not shown).

The contact pads 104 . 106 . 112 . 114 may as a substance or mixture of substances, a substance or a mixture of substances similar to the first electrode 202 or the second electrode 210 or formed from (see 2 ), for example as a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr).

In various exemplary embodiments, the optoelectronic component in the optically inactive region can have a device for a conclusive connection, for example for a cohesive, positive or non-positive connection.

This structure can be used both for bottom-emitter OLEDs ( 2 ) as well as for top emitter OLEDs ( 3 ) will be realized.

2a , b show schematic representations of optoelectronic components, according to various embodiments.

The optoelectronic component 100 For example, an electronic component providing electromagnetic radiation 100 , For example, a light-emitting device 100 , For example, in the form of an organic light emitting diode 102 can be a carrier 122 exhibit. The carrier 122 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 122 Glass, quartz, and / or a semiconductor material or any other suitable substance or be formed therefrom. Furthermore, the carrier can 122 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 122 may comprise one or more of the above substances. The carrier 122 may comprise a metal or a metal compound, for example copper, silver, gold, platinum or the like, for example in the form of a thin translucent or transparent metal coating. The carrier 122 can be translucent or even transparent.

On or above the vehicle 122 In various embodiments, a barrier layer can optionally be arranged (not shown). The barrier layer may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys thereof. Further, in various embodiments, the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm ,

On or above the barrier layer can be an electrically active area 106 of the light emitting device 100 be arranged. The electrically active area 106 can be considered the area of the light-emitting device 100 be understood, in which an electric current for operation of the light-emitting device 100 flows. In various embodiments, the electrically active region 106 a first electrode 202 , a second electrode 210 and an organic functional layer structure in between 220 have, as will be explained in more detail below.

Thus, in various embodiments, on or over the barrier layer (or, if the barrier layer is absent, on or above the support 122 ) the first electrode 202 (For example in the form of a first electrode layer 202 ) be applied. The first electrode 202 (hereinafter also referred to as lower electrode 202 may be formed of an electrically conductive substance or be, such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 202 have a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances.

In various embodiments, the first electrode 202 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 202 have one or more of the following substances as an alternative or in addition to the above-mentioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 202 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 202 and the carrier 122 be formed translucent or transparent. In the case that the first electrode 202 comprises or is formed of a metal, the first electrode 202 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 202 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 202 a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 202 has a conductive transparent oxide (TCO) or is formed therefrom, the first electrode 202 For example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 202 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed from graphene layers and composites, the first electrode 202 For example, a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 202 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The first electrode 202 may comprise a first electrical contact pad, to which a first electrical potential (provided by a power source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential to the carrier 122 be created or be and then then indirectly to the first electrode 202 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region of the light-emitting component 100 an organic functional layer structure 220 which are on or above the first electrode 202 is applied or trained.

The organic functional layer structure 220 can be one or more emitter layers 206 have, for example, with fluorescent and / or phosphorescent emitters, and one or more hole injection layers 204 (also referred to as hole transport layer (s) 204 ). In various embodiments, alternatively or additionally, one or more electron injection layers 208 (also referred to as electron transport layer (s)) 208 ) be provided.

Examples of emitter materials used in the light-emitting device 100 according to various embodiments for the emitter layer (s) 206 can be used include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g., 2- or 2,5-substituted poly-p-phenylenevinylene) as well as metal complexes such as iridium complexes such as blue phosphorescent FIrPic (Bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb) bpy) ₃ x 2 (PF ₆ ) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4 - (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2 -methyl-6-ylolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 206 of the light emitting device 100 For example, may be selected so that the light-emitting device 100 White light emitted. The emitter layer (s) 206 can have several different colored (for example blue and yellow or blue, green and red) emitting emitter materials, alternatively, the emitter layer (s) can / 206 also be composed of several sub-layers, such as a blue fluorescent emitter layer 206 or blue phosphorescent emitter layer 206 , a green phosphorescent emitter layer 206 and a red phosphorescent emitter layer 206 , By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layer structure 220 may generally comprise one or more electroluminescent layers. The one or more electroluminescent layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these substances. For example, the organic functional layer structure 220 have one or more electroluminescent layers as the hole transport layer 204 is designed or are, so that, for example, in the case of an OLED an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the organic functional layer structure 220 have one or more functional layers that serve as an electron transport layer 208 is executed or are, so that, for example, in an OLED effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 204 For example, tertiary amines, carbazole derivatives, conductive polyaniline or polythylenedioxythiophene can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

In various embodiments, the hole transport layer 204 on or above the first electrode 202 deposited, for example, be deposited, and the emitter layer 206 can be on or above the hole transport layer 204 be deposited, for example, be deposited. In various embodiments, the electron transport layer 208 on or above the emitter layer 206 applied, for example, be deposited.

In various embodiments, the organic functional layer structure 220 (ie, for example, the sum of the thicknesses of hole transport layer (s) 204 and emitter layer (s) 206 and electron transport layer (s) 208 ) have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of approximately approximately 1 μm, for example a layer thickness of approximately approximately 800 nm, for example a layer thickness of approximately approximately 500 nm, For example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm. In various embodiments, the organic functional layer structure 220 For example, a stack of a plurality of directly superimposed organic light-emitting diodes (OLEDs), each OLED may have, for example, a layer thickness of at most about 1.5 microns, for example, a layer thickness of about 1.2 microns, for example, a layer thickness of at most about 1 micron , for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various embodiments, the organic functional layer structure 220 For example, have a stack of two, three or four directly superimposed OLEDs, in which case, for example, organic functional layer structure 220 may have a layer thickness of at most about 3 microns.

The light emitting device 100 Optionally, further organic functional layers, for example arranged on or over the one or more emitter layers, can be optionally used 206 or on or above the electron transport layer (s) 208 which serve the functionality and thus the efficiency of the light-emitting device 100 continue to improve.

On or above the organic functional layer structure 220 or optionally on or over the one or more further organic functional layer structures, the second electrode 210 (For example in the form of a second electrode layer 210 ) be applied.

In various embodiments, the second electrode 210 have the same substances or be formed from it as the first electrode 202 , wherein in various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 210 (For example, in the case of a metallic second electrode 210 ), for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm, for example a layer thickness of less than or equal to about 35 nm, for example a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm ,

The second electrode 210 may generally be formed or be similar to the first electrode 202 , or different from this. The second electrode 210 may be formed in various embodiments of one or more of the substances and with the respective layer thickness or be, as above in connection with the first electrode 202 described. In various embodiments, the first electrode 202 and the second electrode 210 both translucent or transparent. Thus, the in 1a , b illustrated light emitting device 100 as a top and bottom emitter (in other words as a transparent light-emitting component 100 ) be formed.

The second electrode 210 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 210 may comprise a second electrical connection to which a second electrical potential (which is different from the first electrical potential) provided by the energy source, can be applied. For example, the second electric potential may have a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 1.7V to about 15V, for example, a value in a range of about 32V to about 12V.

On or above the second electrode 210 and thus on or above the electrically active region may optionally be an encapsulation 212 , for example in the form of a barrier thin layer / thin-layer encapsulation 212 be formed or be.

Under a "barrier thin film" 212 or a "barrier thin film" 212 In the context of this application, for example, a layer or a layer structure can be understood which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin film 212 designed such that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvent or at most very small proportions.

According to one embodiment, the barrier thin film 212 be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin layer 212 have a plurality of sub-layers formed on each other. In other words, according to an embodiment, the barrier thin film 212 be formed as a layer stack (stack). The barrier thin film 212 or one or more sublayers of the barrier film 212 can be formed, for example, by means of a suitable deposition process, for. Example by means of a Atomschichtabscheideverfahrens (Atomic Layer Deposition (ALD)) according to an embodiment, for. Plasma Enhanced Atomic Layer Deposition (PEALD) or plasma-less atomic layer deposition (PLALD), or chemical vapor deposition (CVD) according to another embodiment, e.g. , A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin film 212 having multiple sublayers, all sublayers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer 212 that several Partial layers, one or more sub-layers of the barrier thin film 212 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The barrier thin film 212 According to one embodiment, it may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment, in which the barrier thin film 212 has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer 212 have different layer thicknesses. In other words, at least one of the partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin film 212 or the individual partial layers of the barrier thin film 212 may be formed according to an embodiment as a translucent or transparent layer. In other words, the barrier thin film 212 (or the individual sublayers of the barrier thin film 212 ) consist of a translucent or transparent substance (or a mixture of substances that is translucent or transparent).

According to one embodiment, the barrier thin film 212 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 212 alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 212 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 212 one or more high-index substances, in other words one or more substances with a high refractive index, for example with a refractive index of at least 2.

In various embodiments, the cover may be coated with an adhesive on or over the barrier film 212 be fixed. In various embodiments, on or above the barrier film 212 an adhesive and / or a protective lacquer may be provided by means of which, for example, a cover (for example a glass cover, a metal foil cover, a sealed plastic foil cover) on or above the barrier thin layer 212 attached, for example, is glued. In various embodiments, the optically translucent layer of adhesive and / or protective lacquer may have a layer thickness of greater than 1 .mu.m, for example, a layer thickness of several microns. In various embodiments, the adhesive may include or be a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the layer of the adhesive (also referred to as adhesive layer). In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron, or the like can be provided as light-scattering particles.

In various embodiments, between the second electrode 210 and the layer of adhesive and / or protective lacquer or an electrically insulating layer (not shown) are applied or be, for example SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 microns, for example, with a layer thickness in one Range of about 500 nm to about 1 micron to protect electrically unstable materials, for example, during a wet chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the cover. Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. For example, in one embodiment, an adhesive may be a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

It should also be pointed out that in various embodiments it is also possible to completely dispense with an adhesive, for example in embodiments in which the cover, for example made of glass, is applied to the barrier thin layer by means of, for example, plasma spraying 212 be applied.

In various embodiments, on or above the barrier film 212 a cover may be formed, for example made of glass, for example by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 ,

In various embodiments, the cover and / or the adhesive may have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments, additionally one or more antireflection coatings (for example combined with the encapsulation 212 , For example, the barrier thin film 212 ) in the light-emitting device 100 be provided.

In various embodiments (shown by way of example in FIG 2a ) can be on or over the barrier thin film 212 an electrically switchable mirror structure 110 be educated. On or above the electrically switchable mirror structure 110 can be a converter structure 214 be educated. On or above the converter structure 214 can be a reflector structure 216 be educated. In one embodiment, a cover as described above may be on or over the reflector structure 216 be educated. In one embodiment, the cover may be a reflector structure 216 be educated.

In various embodiments, a first voltage source 108 with the first electrode 202 and with the second electrode 210 be electrically connected.

In various embodiments, a second voltage source 116 with the electrically switchable mirror structure 110 be electrically connected.

By means of a structured, electrically switchable mirror structure 110 between the organic functional layer structure 220 and a converter structure 214 the color locus of the optoelectronic component can be adjusted. The resulting color locus can in this embodiment in the CIE color diagram on the connecting line between the color locus of the optoelectronic component structure 102 and the luminescence of the converter structure 214 lie.

In various exemplary embodiments, the converter structure may comprise or be formed from a photoluminescent phosphor, for example a phosphor which is distributed in an organic or inorganic matrix.

In various embodiments, an electrically switchable mirror structure 110 be formed as a composite film, wherein the composite film has electrically switchable, optically reflective properties. The composite foil may have a first control electrode, a second control electrode and a microcompartment film with cavities. The cavities may comprise electrophoretically mobile particles in a suspension liquid, the cavities in the microcompartment film having, for example, a conical or conical depth profile.

In various embodiments, an electrically switchable mirror structure 110 have an "electronic ink", wherein the optical properties of the electrically switchable mirror structure by means of the orientation of single or multi-colored pigment particles is formed in an electric field.

In various embodiments, an electrically switchable mirror structure 110 comprise or be formed from a metal hydride, for example yttrium / lanthanum in combination with a zirconium oxide layer with H ₂ inclusions.

In one embodiment, the optoelectronic device may be formed as a bottom emitter that emits white light by the optoelectronic device having an emission zone that emits blue-green light and a converter structure that converts the blue-green light into a deep red light converted. By means of the structured, electrically switchable mirror structure, a color-changeable luminous field can be formed in the image plane by optically switching the converter structure into the beam path of the optoelectronic component structure by means of the electrically switchable mirror structure.

In one embodiment, the carrier may 122 as a glass substrate 122 be educated. On the glass substrate 122 can be a first electrode 202 be formed, wherein the first electrode 202 ITO or formed from ITO. Up or over the first electrode 202 may be a p-doped hole injection layer 204 be educated. The hole injection layer 204 For example, it may have 15 weight percent Cu (I) pFBz in 1-TNATA or aNPD.

On or above the hole injection layer 204 can be an emitter layer 206 be educated. The emitter layer 206 may comprise one or more phosphor (s) electroluminescent by means of an electric current through the emitter layer 206 emits a green-blue light. On or above the emitter layer 206 may be an n-doped electron injection layer 208 be educated. The electron injection layer 208 For example, it may have 10 wt% Cs ₃ PO ₄ in BCP.

On or above the electron injection layer 208 can be a second electrode 210 be educated. The second electrode 210 may include or be formed from MgAg. On or above the second electrode 210 can be a barrier thin film 212 be educated. The barrier thin film 112 may be transmissive, for example transparent, formed, for example, Al ₂ O ₃ , SiN _x , SiO _x have or be formed therefrom.

On or above the barrier thin film 212 can be an electrically switchable mirror structure 110 be educated. On or above the electrically switchable mirror structure 110 can be a converter structure 214 be educated. The converter structure 214 may include or be formed from a phosphor which converts a green-blue light to a red light, for example, Eu ²⁺ doped nitride phosphors, for example, (Ca, Sr) AlSiN ₃ : Eu ₂ +; Strontium chloroapatite: Eu, for example (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu); Ce ³⁺ doped garnet phosphors, for example YAG: Ce. On or above the converter structure 214 can be a reflector structure 216 be educated. The reflector structure 216 may for example comprise or be formed from aluminum or silver.

In a first operating mode 222 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically reflective such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is reflected by the emitter layer 206 provided. In other words, in the first operating mode, the electrically switchable mirror structure 110 a transmittance of about zero and a reflectance of about one. As a result, in the image plane of the optoelectronic component essentially only the electromagnetic radiation can be perceived, that of the emitter layer 206 is emitted, that is, for example, green-blue light.

In a second operating mode 224 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically transmissive such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is transmitted from the emitter layer 206 provided. In other words, in the second operating mode, the electrically switchable mirror structure 110 a transmittance of about one and a reflectance of about zero. As a result, in the image plane of the optoelectronic component, an electromagnetic radiation can be perceived, the color locus of which is a mixture of the primary electromagnetic radiation, ie of the light, which emanates from the emitter layer 206 is emitted, and the electromagnetic radiation emitted by the converter structure 214 is emitted converted, which is for example white light.

In various embodiments (shown by way of example in FIG 2 B ) can be on or over the barrier thin film 212 a converter structure 214 be educated. On or above the converter structure 214 can be an electrically switchable mirror structure 110 be educated. On or above the converter structure 214 can be an absorber structure 218 be educated. In one embodiment, a cover as described above may be on or over the absorber structure 218 be educated. In one embodiment, the cover may be an absorber structure 218 be educated.

In various embodiments, a first voltage source 108 with the first electrode 202 and with the second electrode 210 be electrically connected.

In various embodiments, a second voltage source 116 with the electrically switchable mirror structure 110 be electrically connected.

In this embodiment, a regulation of the color locus of the light, which is provided by the optoelectronic component, by means of a structured, electrically switchable mirror structure 110 be achieved, which is similar to the mirror structure 110 of the 2a if this is the organic functional layer structure 220 and the converter structure 214 is optically downstream, ie if the converter structure 214 between the mirror structure 110 and the organic functional layer structure 220 is trained. The converter structure 214 wavelength-converted in this embodiment even with an optically transmissive mirror structure 110 the electromagnetic radiation coming from the organic functional layer structure 220 is emitted.

In one embodiment, the carrier may 122 as a glass substrate 122 be educated. On the glass substrate 122 can be a first electrode 202 be formed, wherein the first electrode 202 ITO or formed from ITO. On or above the first electrode 202 may be a p-doped hole injection layer 204 be educated. The hole injection layer 204 For example, it may have 15 weight percent Cu (I) pFBz in 1-TNATA or aNPD.

On or above the hole injection layer 204 can be an emitter layer 206 be educated. The emitter layer 206 may comprise one or more phosphor (s) electroluminescent by means of an electric current through the emitter layer 206 emits a green-blue light. On or above the emitter layer 206 may be an n-doped electron injection layer 208 be educated. The electron injection layer 208 For example, it may have 10 wt% Cs ₃ PO ₄ in BCP.

On or above the electron injection layer 208 can be a second electrode 210 be educated. The second electrode 210 may include or be formed from MgAg. On or above the second electrode 210 can be a barrier thin film 212 be educated. The barrier thin film 112 may be transmissive, for example transparent, formed, for example, Al ₂ O ₃ , SiN _x , SiO _x have or be formed therefrom.

On or above the barrier thin film 212 can be a converter structure 214 be educated. The converter structure 214 may comprise or be formed from a phosphor which converts a green blue light to a red light, for example Eu ²⁺ doped nitride phosphors, for example (Ca, Sr) AlSiN ₃ : Eu ₂ +; Strontium chloroapatite: Eu, for example (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu); Ce ³⁺ doped garnet phosphors, for example YAG: Ce. On or above the converter structure 214 can be an electrically switchable mirror structure 110 be educated. On or above the electrically switchable mirror structure 110 can be an absorber structure 218 be educated. The absorber structure 218 may be configured such that it can absorb or transmit an incident electromagnetic radiation, for example, comprise or be formed from elemental carbon or carbon black.

In a first operating mode 226 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically reflective such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is reflected by the emitter layer 206 provided. In other words, in the first operating mode, the electrically switchable mirror structure 110 a transmittance of about zero and a reflectance of about one. As a result, in the image plane of the optoelectronic component, an electromagnetic radiation can be perceived, the color locus of which is a mixture of the primary electromagnetic radiation, ie of the light, which emanates from the emitter layer 206 is emitted, and the electromagnetic radiation emitted by the converter structure 214 is emitted converted, which is for example white light.

In a second operating mode 228 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically transmissive such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is transmitted from the emitter layer 206 provided. In other words: in the second operating mode 224 has the electrically switchable mirror structure 110 a transmittance of about one and a reflectance of about zero. The converted radiation is partially in the absorber structure 218 absorbed and / or transmitted by this. As a result, in the image plane of the optoelectronic component, a mixed electromagnetic radiation can be perceived by the emitter layer 206 and partially from the converter structure 214 is emitted, that is, for example, green light.

3a , b show schematic representations of optoelectronic components, according to various embodiments.

Shown are similar 2a , b embodiments of optoelectronic components, which are, however, designed as a top emitter. The optoelectronic component structure 102 can according to one of the embodiments of the description of 1a , Federation 2a , b be formed.

Shown is a carrier 122 , wherein on or above a flat side of the carrier are formed: a first electrode 202 a hole injection layer 204 , one or more emitter layers 206 , one or more electron injection layers 208 , a second electrode 210 and a transmitting, for example translucent or transparent, barrier thin film 212 ,

In one embodiment (shown in FIG 3a ) may be on the other flat side of the carrier 122 in the beam path of the electromagnetic radiation emitted by the one or more emitter layers 206 is emitted, an electrically switchable mirror structure 110 on or above the vehicle 122 be educated. On or above the mirror structure 110 can be a converter structure 214 be educated. On or above the converter structure 214 can be a reflector structure 216 be educated.

The stack of electrically switchable mirror structure 110 , Converter structure 214 and reflector structure 218 is similar in effect to the embodiment of the description of 2a ,

In one embodiment, the carrier may 122 as a glass substrate 122 be educated. On the glass substrate 122 can be a first electrode 202 be formed, wherein the first electrode 202 ITO or formed from ITO. On or above the first electrode 202 may be a p-doped hole injection layer 204 be educated. The hole injection layer 204 For example, it may have 15 weight percent Cu (I) pFBz in 1-TNATA or aNPD.

On or above the hole injection layer 204 can be an emitter layer 206 be educated. The emitter layer 206 may comprise one or more phosphor (s) electroluminescent by means of an electric current through the emitter layer 206 emits a green-blue light. On or above the emitter layer 206 may be an n-doped electron injection layer 208 be educated. The electron injection layer 208 For example, it may have 10 wt% Cs ₃ PO ₄ in BCP.

On or above the electron injection layer 208 can be a second electrode 210 be educated. The second electrode 210 may include or be formed from MgAg. On or above the second electrode 210 can be a barrier thin film 212 be educated. The barrier thin film 112 may be transmissive, for example transparent, formed, for example, Al ₂ O ₃ , SiN _x , SiO _x have or be formed therefrom.

On or above the side of the wearer, the side of the wearer with the first electrode 202 is opposite and in the beam path of the electromagnetic radiation emitted by the emitter layer 206 can be emitted, an electrically switchable mirror structure 110 be educated. On or above the electrically switchable mirror structure 110 can be a converter structure 214 be educated. The converter structure 214 may comprise or be formed from a phosphor which converts a green-blue light into a red light, for example Eu ²⁺ -doped nitride phosphors, for example (Ca, Sr) AlSiN ₃ : Eu ₂ +; Strontium chloroapatite: Eu, for example (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu); Ce ³⁺ doped garnet phosphors, for example YAG: Ce. On or above the converter structure 214 can be a reflector structure 216 be educated. The reflector structure 216 may for example comprise or be formed from aluminum or silver.

In a first operating mode 222 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically reflective such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is reflected by the emitter layer 206 provided. In other words, in the first operating mode, the electrically switchable mirror structure 110 a transmittance of about zero and a reflectance of about one. As a result, in the image plane of the optoelectronic component essentially only the electromagnetic radiation can be perceived, that of the emitter layer 206 is emitted, ie a green-blue light.

In a second operating mode 224 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically transmissive such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is transmitted from the emitter layer 206 provided. In other words, in the second operating mode, the electrically switchable mirror structure 110 a transmittance of about one and a reflectance of about zero. As a result, in the image plane of the optoelectronic component, an electromagnetic radiation can be perceived, the color locus of which is a mixture of the primary electromagnetic radiation, ie of the light, which emanates from the emitter layer 206 is emitted, and the electromagnetic radiation emitted by the converter structure 214 is emitted converted, which is for example white light.

In one embodiment (shown in FIG 3b ) may be on the other flat side of the carrier 122 in the beam path of the electromagnetic radiation emitted by the one or more emitter layers 206 is emitted, on or above the carrier 122 a converter structure 214 be educated. On or above the converter structure 214 can be an electrically switchable mirror structure 110 be educated. On or above the mirror structure 110 can be an absorber structure 218 be educated.

The stack of converter structure 214 , electrically switchable mirror structure 110 and absorber structure 218 is similar in effect to the embodiment of the description of 2 B ,

In one embodiment, the optoelectronic device may be formed as a top emitter that emits white light by the optoelectronic device having an emission zone that emits blue-green light and a converter structure that converts the blue-green light into a deep red light converted. By means of the structured, electrically switchable mirror structure, a color-changeable luminous field can be formed in the image plane by the converter structure being transformed into the beam path of the optoelectronic Component structure is switched on optically by means of the electrically switchable mirror structure.

In one embodiment, the carrier may 122 as a glass substrate 122 be educated. On the glass substrate 122 can be a first electrode 202 be formed, wherein the first electrode 202 ITO or formed from ITO. On or above the first electrode 202 may be a p-doped hole injection layer 204 be educated. The hole injection layer 204 For example, it may have 15 weight percent Cu (I) pFBz in 1-TNATA or aNPD. On or above the hole injection layer 204 can be an emitter layer 206 be educated. The emitter layer 206 may comprise one or more phosphor (s) electroluminescent by means of an electric current through the emitter layer 206 emits a green-blue light. The electron injection layer 208 For example, it may have 10 wt% Cs ₃ PO ₄ in BCP. On or above the emitter layer 206 may be an n-doped electron injection layer 208 be educated. On or above the electron injection layer 208 can be a second electrode 210 be educated. The second electrode 210 may include or be formed from MgAg. On or above the second electrode 210 can be a barrier thin film 212 be educated. The barrier thin film 112 may be transmissive, for example transparent, formed, for example, Al ₂ O ₃ , SiN _x , SiO _x have or be formed therefrom.

On or above the side of the wearer, the side of the wearer with the first electrode 202 is opposite and in the beam path of the electromagnetic radiation emitted by the emitter layer 206 can be emitted, a converter structure 214 be educated. The converter structure 214 may comprise or be formed from a phosphor which converts a green-blue light into a red light, for example Eu ²⁺ -doped nitride phosphors, for example (Ca, Sr) AlSiN ₃ : Eu ₂ +; Strontium chloroapatite: Eu, for example (Sr, Ca) ₅ (PO ₄ ) ₃ Cl: Eu); Ce ³⁺ doped garnet phosphors, for example YAG: Ce. On or above the converter structure 214 can be an electrically switchable mirror structure 110 be educated. On or above the electrically switchable mirror structure 110 can be an absorber structure 218 be educated.

In a first operating mode 226 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically reflective such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is reflected by the emitter layer 206 provided. In other words, in the first operating mode, the electrically switchable mirror structure 110 a transmittance of about zero and a reflectance of about one. As a result, in the image plane of the optoelectronic component, an electromagnetic radiation can be perceived, the color locus of which is a mixture of the primary electromagnetic radiation, ie of the light, which emanates from the emitter layer 206 is emitted, and the electromagnetic radiation emitted by the converter structure 214 is emitted converted, which is for example white light.

In a second operating mode 228 of the optoelectronic component, the electrically switchable mirror structure 110 be electrically transmissive such that approximately the entire, on the electrically switchable mirror structure 110 incident, electromagnetic radiation is transmitted from the emitter layer 206 provided. In other words: in the second operating mode 224 has the electrically switchable mirror structure 110 a transmittance of about one and a reflectance of about zero. The converted radiation is partially in the absorber structure 218 absorbed and / or transmitted by this. As a result, in the image plane of the optoelectronic component, a mixed electromagnetic radiation can be perceived by the emitter layer 206 and the converter structure 214 is emitted, that is, for example, green light.

4a , b show schematic representations of optoelectronic components, according to various embodiments.

Shown in 4a , b are schematic cross-sectional views of optoelectronic devices according to various embodiments. In the 4a , b illustrated embodiments of the optoelectronic devices are intended only to illustrate the structuring and can according to the embodiments of the description of 1 to 3 be educated.

In various embodiments of the description of 1 to 3 can be an electrically switchable mirror structure 110 in terms of a converter structure 214 , a reflector structure 216 and / or an absorber structure 218 (not shown) - shown in 4a ,

In various embodiments of the description of 1 to 3 can be a converter structure 214 with respect to an electrically switchable mirror structure 110 , a reflector structure 216 and / or an absorber structure 218 (not shown) - shown in 4b ,

In various embodiments (not shown) of the description of 1 to 3 can / can be a converter structure 214 and / or an electrically switchable mirror structure 110 in terms of a reflector structure 216 or an absorber structure 218 be structured.

In various embodiments (not shown) of the description of 1 to 3 can the reflector structure 216 or the absorber structure 218 in terms of a converter structure 214 and / or an electrically switchable mirror structure 110 be structured.

By means of structuring a converter structure, an electrically switchable mirror structure, an absorber structure and / or a reflector structure, information can be displayed in the image plane of the optoelectronic component. The information shown can be formed on the basis of a contrast, for example the brightness or the color location of optically active regions of the optoelectronic component, for example a first region 402 provide the optically active surface with a first color locus and a second region 404 provide light of a second color location to the optically active surface. In one embodiment, the first color location may be a white light and the second color location may be a blue-green light.

The illustrated information which is represented by means of structuring at least one of the structures mentioned in the image plane of the optoelectronic component can be a pictogram, an ideogram and / or a lettering - see for example 1a , b.

Patterning one of said structures may be understood as structuring at least one structure with respect to at least one other structure. However, patterning can be understood as meaning that a structure having a plurality of partial structures, the structure being structured with respect to the partial structures, for example a structured, electrically switchable mirror structure having a first electrically switchable mirror structure and a second electrically switchable mirror structure, wherein the first electrically switchable mirror structure is structured with respect to the second electrically switchable mirror structure. As a result, for example, a plurality of different, changing or switchable pictograms, ideograms or logos can be represented by means of an optoelectronic component, for example directional arrows which show different, switchable directions.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to display color-variable information. The optoelectronic component can be realized with a compact layer structure by stacking of optoelectronic component structure, for example an organic light-emitting diode, a structured electrically switchable mirror structure and optionally a converter structure.

The color location of the light emitted by the optoelectronic component into the image plane can be adjusted by means of the structure to an electrically controllable color location, for example along a curve or line in a CIE diagram. Furthermore, the age-related color location shift of an organic optoelectronic component structure can be readjusted by means of the electrical color locus control.

By means of a stable deep red-emitting, photoluminescent converter structure in the optoelectronic component structure, the lifetime of the optoelectronic component can be increased.

Furthermore, the efficiency of the optoelectronic component can be almost maintained during operation, since emitted electromagnetic radiation is only reduced by absorption losses in the electrically switchable mirror layer.

The structuring of the electrically switchable mirror structure and / or the converter structure can be generated information, for example a lettering, a pictogram or an ideogram, electrically switchable on a homogeneous, for example, luminous surface, for example as digital signage.

Furthermore, the stacking allows a simple formation of the optoelectronic component, for example, forming the mirror structure in a back-end process, for example by the cover of the optoelectronic component structure is formed as an electrically switchable mirror structure or has such a. By way of example, the converter structure can thus be formed after the mirror structure has been formed or can already be formed on the mirror structure, for example in the form of a mirror foil, on the mirror structure before it is applied to the optoelectronic component structure. As a result, the electrically switchable mirror structure can additionally act as part of an encapsulation structure, for example in the case of an organic light-emitting diode which is designed as a bottom emitter.

Furthermore, a plurality of mirror structures in the optoelectronic component can be stacked one above the other in the beam path of the optoelectronic component structure, whereby various optical effects can be formed.

Claims (14)

Optoelectronic component ( 100 ), comprising: an optoelectronic component structure ( 102 ) having an organic functional layer structure ( 220 ), wherein the organic functional layer structure ( 220 ) is adapted to receive and / or provide electromagnetic radiation; and a mirror structure ( 110 ); • where the mirror structure ( 110 ) in the beam path of the optoelectronic component structure ( 110 ) and has electrically switchable optical properties, and wherein the mirror structure ( 110 ) is structured such that the mirror structure ( 110 ) a first area ( 118 ) and a second area ( 120 ), the first region ( 118 ) and the second area ( 120 ) differ in at least one optoelectronic property; and where the first range ( 118 ) and the second area ( 120 ) are formed in each case flat connected. Optoelectronic component ( 100 ) according to claim 1, wherein the mirror structure ( 110 ) further comprises an optically inactive edge region. Optoelectronic component ( 100 ) according to claim 1 or 2, wherein the mirror structure ( 110 ) is designed such that the first area ( 118 ) is electrically insulating and the second area ( 120 ) has electrically switchable optical properties. Optoelectronic component ( 100 ) according to claim 3, wherein the first area ( 118 ) as a hole in the second region ( 120 ) is trained. Optoelectronic component ( 100 ) according to one of claims 1 to 4, wherein the mirror structure ( 110 ) comprises or is formed from a liquid-crystalline substance, in particular in a thermotropic phase or a lyotropic phase. Optoelectronic component ( 100 ) according to one of claims 1 to 5, further comprising: a converter structure ( 214 ) in the beam path of the optoelectronic component structure ( 110 ). Optoelectronic component ( 100 ) according to claim 6, wherein the mirror structure ( 110 ) between the optoelectronic component structure ( 102 ) and the converter structure ( 214 ) is trained. Optoelectronic component ( 100 ) according to claim 6, wherein the converter structure ( 214 ) between the optoelectronic component structure ( 102 ) and the mirror structure ( 110 ) is trained. Optoelectronic component ( 100 ) according to claim 6, wherein the optoelectronic component structure ( 102 ) between the converter structure ( 214 ) and the mirror structure ( 110 ) is trained. Optoelectronic component ( 100 ) according to one of claims 1 to 9, wherein the mirror structure ( 110 ) is formed as a mirror foil. Optoelectronic component ( 100 ) according to one of claims 1 to 10, wherein the first area ( 118 ) and / or the second area ( 120 ) has the shape of a pictogram. Optoelectronic component ( 100 ) according to one of claims 1 to 11, wherein the optoelectronic component structure ( 102 ) is formed as an electroluminescent structure, in particular an organic light emitting diode ( 100 ), an organic transistor ( 100 ) or an organic photoconductor ( 100 ). Method for producing an optoelectronic component, the method comprising: providing an optoelectronic component structure ( 102 ) having an organic functional layer structure ( 220 ), wherein the organic functional layer structure ( 220 ) is adapted to receive and / or provide electromagnetic radiation; and forming a mirror structure ( 110 ); • where the mirror structure ( 110 ) in the beam path of the optoelectronic component structure ( 102 ) is formed and having electrically switchable optical properties is formed, and • wherein the mirror structure ( 110 ) is structured such that the mirror structure ( 110 ) a first area ( 118 ) and a second area ( 120 ), the first region ( 118 ) and the second area ( 120 ) differ in at least one optoelectronic property; and where the first range ( 118 ) and the second area ( 120 ) are each formed surface coherent. Method according to claim 13, wherein the mirror structure ( 110 ) is further formed with an optically inactive edge region.

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