DE102012109236A1 - Method for producing optoelectronic component e.g. solar cell, involves editing optical characteristic of functional layer, so that optoelectronic property of optoelectronic component unit is changed to target property - Google Patents

Abstract

The method involves forming an optically functional layer in a light path of an optoelectronic component unit for receiving electromagnetic radiation to establish optoelectronic properties. A contact pad is electrically connected to optoelectronic component unit to measure optoelectronic property of component unit. The optical characteristic of the optically functional layer is edited, so that measured optoelectronic property of optoelectronic component unit with optically functional layer is changed to optoelectronic target property.

Description

In various embodiments, a method for producing an optoelectronic component is provided.

In the manufacture of optoelectronic components, for example light-emitting diodes (LED) or solar cells, on a common carrier, for example a chip wafer, it can vary locally on the carrier to fluctuations in the layer thickness and / or doping in the layers of the optoelectronic components come. This can lead to a scattering of the optoelectronic properties in the production of the optoelectronic components on the common carrier. The fluctuations in the optoelectronic properties can be a natural production spread of the optoelectronic properties of the optoelectronic components in the finished or partially finished state.

For example, the production spread may be considered as a wavelength response, i. different wavelengths of the intensity maximum of the electromagnetic radiation, which is provided by the optoelectronic components of a type understood.

Further optoelectronic properties which may be subject to production scattering may relate, for example, to the color valence, the brightness, the efficiency and / or the viewing angle dependency of the electromagnetic radiation which can be provided and / or recorded by the optoelectronic components.

The optoelectronic components of one type on a carrier with different optoelectronic properties can be divided into several different bins on the basis of their optoelectronic properties.

Optoelectronic components with the same optoelectronic properties can be referred to as a bin or flux bin. The optoelectronic properties aimed for in the manufacture of the optoelectronic components can be referred to as the target bin or target properties.

The deviation of the optoelectronic properties of an optoelectronic component from a target bin may, for example, depend on the equipment used for producing the optoelectronic component, the position of the optoelectronic component before the optoelectronic components are singulated on the common carrier and / or Process fluctuations during the manufacture of the optoelectronic component, for example by means of a deviation of the process equipment from the calibration, or the like.

The problem of production scattering is evident, for example, in optoelectronic components having a phosphor layer, wherein the optoelectronic component has a phosphor layer in the optical path of a semiconductor chip, wherein the semiconductor chip can receive or provide electromagnetic radiation.

Currently, for example, semiconductor chips that provide white light, i. can be produced only by applying a phosphor plate in the light path of a semiconductor chip that can emit blue light. The phosphor wafer may include or be formed from a phosphor or a mixture of one or more phosphors in a silicone.

In a conventional method, suitable phosphor chips and semiconductor chips are combined in such a way that the electromagnetic radiation provided has a desired color valence. In order to obtain the narrowest possible color locus distribution, the optical data of the semiconductor chip and phosphor platelets are determined and suitable pairs of semiconductor chip and phosphor platelets are brought together.

A part of the semiconductor chips and platelets is discarded because an unwanted color locus of the electromagnetic radiation provided would be formed by means of the combination of semiconductor chip and phosphor platelets.

In order to ensure the production of, for example, light-emitting diodes of a color locus distribution, many phosphor platelets and semiconductor chips have to be sorted out, in part discarded or offered cheaper. In other words, in order to produce a certain number of optoelectronic devices with a desired target characteristic, for example a given color valence of provided electromagnetic radiation, conventionally more optoelectronic devices are produced than are needed, i. the natural fluctuation of production is compensated by an uneconomical overproduction.

In a conventional procedure - shown in view 100 in 1 - becomes a phosphor tile 106 on or via an optoelectronic component unit 102 by means of an adhesive 104 glued. The mesa edges 108 of the optoelectronic component 102 are by means of the glue 104 not completely of phosphor 106 covered. This can be done by the mesa edges 108 photons from the semiconductor chip 102 are emitted (blue piping).

These photons can not get away from the phosphor layer 106 wavelength converted. As a result, the color homogeneity of the electromagnetic radiation that is provided, for example, by the optoelectronic component unit can be impaired.

In addition, the application of phosphor laminae on or via a semiconductor chip can conventionally only be used for semiconductor chips up to a minimum edge length of approximately 750 μm. With smaller semiconductor chips, the limited storage accuracy of the phosphor wafer has an excessive effect on the color homogeneity of the electromagnetic radiation.

In another conventional method - shown in view 110 in 1 - becomes a phosphor 112 directly, ie without adhesive, on or over a semiconductor chip 102 applied, for example by means of spraying the phosphor 112 on the semiconductor chip 102 , The directly applied phosphor layer 112 can have an inhomogeneous layer thickness, for example a rough surface, by means of the process of applying the phosphor.

The inhomogeneously thick phosphor layer 112 may result in color inhomogeneity of the electromagnetic radiation provided by the opto-electronic device unit. The inhomogeneous layer thickness of the phosphor layer 112 can be understood as another source of manufacturing dispersion of the optoelectronic properties.

In various embodiments, a method for producing an optoelectronic component is provided with which the production spread of the optoelectronic properties in the manufacture of the optoelectronic component can be reduced.

In the context of this description, a component unit can be understood as a partially or completely finished component.

In this sense, a fully completed device may be understood as a self-contained and fully functional device, the characteristics of the fully completed device being in terms of a device unit of the intended properties, i. can deviate from the target properties of the component. A completely finished component in the sense of a component unit can only become a component after processing of the component unit, for example a reduction of layer thicknesses, application of further layers and / or application of further component units on or via the component unit.

In the context of this description, an electronic component can be understood as a component which relates to the control, regulation or amplification of an electric current, for example by means of semiconductor components.

In the context of this description, an optoelectronic component can be understood as meaning a component which emits or absorbs electromagnetic radiation by means of a semiconductor component.

In the context of this description, a different type of two optoelectronic components can be provided if two optoelectronic components differ in at least one optoelectronic property and / or have a different layer cross section.

An electromagnetic radiation emitting / absorbing device may in various embodiments be an electromagnetic radiation emitting / absorbing semiconductor device and / or as an electromagnetic radiation emitting / absorbing diode, as an organic or inorganic electromagnetic radiation emitting / absorbing diode, as emitting electromagnetic radiation / absorbing transistor or be designed as an organic or inorganic electromagnetic radiation emitting / absorbing transistor. The electromagnetic radiation may, for example, be light in the visible range, UV light and / or infrared light.

In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The electromagnetic radiation emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example housed in a common housing.

In this context, the electromagnetic radiation absorbing component, for example, as a light-absorbing diode or Transistor, for example, a photodiode or a solar cell may be formed. The electromagnetic radiation absorbing component may be part of an integrated circuit in various embodiments. Furthermore, a plurality of electromagnetic radiation absorbing components may be provided, for example housed in a common housing.

In the context of this description, provision of electromagnetic radiation can be understood as meaning emission of electromagnetic radiation.

In the context of this description, absorption of electromagnetic radiation can be understood to mean absorption of electromagnetic radiation.

In the context of this description, an optoelectronic component which provides electromagnetic radiation can be designed as a wired LED, surface mounted device (SMD) or chip-on-board LED (Die).

In the context of this description, a semiconductor chip which can provide electromagnetic radiation can be understood as an LED chip.

In the context of this description, a laser diode can be understood as a special embodiment of a light-emitting diode.

An optoelectronic component may have, for example, an LED chip (leaded LED, SMD) or be configured as an LED chip (chip-on-board).

On or above the LED chip, a package or package may be applied and / or formed. The packaging can be designed and / or configured, for example, as an encapsulation, optical lens and / or as a converter element.

A wired LED may have an LED chip that is encapsulated with a plastic cap. The plastic cap can protect the LED chip from external, harmful influences, for example oxygen and / or water, during manufacture and during operation.

An overlying light emitting diode (SMD) may have an LED chip in a housing. The housing can be fixed in a conclusive manner with a substrate.

A chip-on-board light-emitting diode may have an LED chip which is fixed on a substrate and / or is formed on a substrate. The LED chip can have neither a housing nor contact pads.

Several LED chips can be applied or formed on a common substrate, for example a printed circuit board, for example a metal core board, for example a flexible printed circuit board (flexPCB).

Between two LED chips, the substrate can have a saw trench, which can be used to singulate the LED chips.

In the context of this description, a sawing trench can also be understood as a sawing path, sawing frame, scoring trench, scoring area and / or scribe line area.

The LED chips can be wired to the printed circuit board by means of contact pads (wire bonding). The wiring can be done for example by means of gold wires.

Optoelectronic components with the same optoelectronic property can be referred to as bin or flux bin.

The optoelectronic properties aimed for in the manufacture of the optoelectronic components can be referred to as the target bin or target properties. A fine bin can be understood as a bin with more limited optoelectronic properties.

In the context of this description, an organic substance can be understood as meaning a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context This description under a mixture of substances to be understood something that consists of components of two or more different substances whose components are, for example, very finely divided. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

Forming electromagnetic radiation of a second wavelength from electromagnetic radiation of a first wavelength may be called wavelength conversion. Wavelength conversion is used in optoelectronic devices for color conversion. For example, to simplify the generation of white light, for example, a blue light may be converted to a yellow light. The color mixture of unconverted blue light and yellow light can form white light. A wavelength conversion can be realized for example by means of a phosphor.

A phosphor can be energetically excited by incident electromagnetic radiation of the first wavelength. In the subsequent energetic de-energizing, the phosphors can provide electromagnetic radiation, for example light, one or more predetermined color valencies, for example a second wavelength.

In other words, the phosphor can be understood to be a substance which converts lossy electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength, for example by means of phosphorescence or fluorescence. The energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation may be expressed in phonons, i. Heat, and / or converted into photons by emission of electromagnetic radiation having a wavelength as a function of the energy difference. In the wavelength conversion with a phosphor, the wavelength of the incident electromagnetic radiation may be shifted to shorter (anti-Stokes shift) or longer wavelengths (Stokes shift).

A phosphor can be arranged for wavelength conversion in the light path of an optoelectronic component unit. The phosphor may be in physical contact with the opto-electronic device unit, i. sharing a common interface, or being set up as a remote phosphor.

In the context of this description, a color valence can be understood as meaning a physiological, colored effect of an electromagnetic radiation. The color valences can be single colors or mixed colors. The individual colors may, for example, have green, red or yellow light. The mixed colors can be mixed, for example, from green, red and / or yellow light and / or have, for example, white light. For example, a color valence can be determined as a color locus (Cx, Cy) in a CIE color standard chart.

In the context of this description, the dimensional stability of a geometrically shaped substance can be described on the basis of the modulus of elasticity, the viscosity and / or the Shore hardness.

A fabric may in various embodiments be considered dimensionally stable, ie hard and / or strong in this sense, if the fabric has a viscosity in the range of about 5 × 10 ² Pa · s to about 1 × 10 ²³ Pa · s and has a modulus of elasticity in a range of about 1 × 10 ⁶ Pa to about 1 × 10 ¹² Pa, since the fabric may show a viscoelastic to brittle behavior after forming a geometric shape.

A fabric may be considered malleable, ie soft and / or liquid in this sense, if the fabric has a viscosity in the range of about 1 x 10 ^-2 Pa · s to about 5 x 10 ² Pa · s or a modulus of elasticity to about 1 × 10 ⁶ Pa, since any change in the geometric shape of the fabric can lead to an irreversible, plastic change in the geometric shape of the fabric. For example, a liquid substance can also be understood as a moldable substance.

For purposes of this specification, an elastomer or plastic may be considered dimensionally stable when the fabric or blend of elastomer or plastic has a Shore hardness, such as a Shore A hardness, of greater than about 30, for example, greater than about 60 , for example greater about 70.

A dimensionally stable fabric can be made plastically moldable by adding plasticizers, for example, solvents, or increasing the temperature, i. be liquefied.

A plastic moldable material may become dimensionally stable by means of a crosslinking reaction, removal of plasticizers and / or removal of heat, i. be solidified.

The solidification of a substance or mixture of substances, ie the transition of a substance from moldable to dimensionally stable, may involve a change in the viscosity, for example an increase in the viscosity of a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example in a range of about 10 to about 10 ⁶ . The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, i. the transition of a substance from malleable to dimensionally stable, may include a process or process in which low molecular weight components are removed from the substance or mixture, for example solvent molecules or low molecular weight uncrosslinked constituents of the substance or mixture, for example as drying or chemical crosslinking of the substance Stoffs or the substance mixture. In the moldable state, the substance or the mixture of substances may have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in the dimensionally stable state.

In various embodiments, a method for producing an optoelectronic component is provided, the method comprising: forming an optically functional layer in the optical path of at least one optoelectronic component unit, wherein the at least one optoelectronic component unit receives and / or provides electromagnetic radiation, wherein the optically functional layer is adapted to change the optoelectronic properties of the provided electromagnetic radiation, which is received and / or provided by the at least one optoelectronic component unit; Exposing at least one contact pad, wherein the at least one contact pad is electrically connected to the at least one optoelectronic component unit; Measuring at least one optoelectronic property of the at least one optoelectronic component unit having an optically functional layer, wherein the at least one optoelectronic property is measured by means of the at least one exposed contact pad; Processing at least one optical property of the optically functional layer such that the at least one measured optoelectronic property of the at least one optoelectronic component unit with an optically functional layer is changed to an optoelectronic target property.

With regard to emitted or absorbed electromagnetic radiation, optoelectronic properties can relate, for example, to the intensity (brightness), the wavelength spectrum (color valence), the viewing angle dependence, the polarization, the coherence length, the absorption of the electromagnetic radiation and / or the efficiency of an optoelectronic component unit.

The optoelectronic target properties can be the optoelectronic properties of the optoelectronic component unit that are intended or planned in the production with the layer cross section of the optoelectronic component unit. The natural manufacturing variation can produce deviations of the optoelectronic properties from the optoelectronic target properties. The optoelectronic component units with these properties can also be referred to as output states.

However, the optoelectronic target properties may also be an individually different, adjustable target characteristic, i. the concrete layer cross section of the optoelectronic component units can be the starting point for the optoelectronic target properties which can be set according to a specific customer request.

The optoelectronic target properties can have a plurality of defined parameters with a respective permissible variance. The optoelectronic target properties of a permissible variance can be, for example, as a specific fine bin.

Processing, adaptation or balancing of the initial state can be dispensed with if the optoelectronic properties of an optoelectronic component unit correspond to a target property or are formed within the variance of a target property.

The number of possible output states and processing options or adjustments is not limited. Rather, initial states and adjustments may differ discretely or even infinitely from one another and / or from one another.

In one embodiment of the method, the optically functional layer can be formed as: a scattering layer, a phosphor layer and / or a coupling layer.

In one embodiment of the method, an optically functional layer can be formed as a coating.

In one embodiment of the method, the optically functional layer can be formed such that the provided electromagnetic radiation is changed in at least one optoelectronic property, for example the configuration of the wavelength spectrum.

In one embodiment of the method, an optically functional layer having a thickness in a range of about 10 μm to about 500 be formed, for example in a range of about 25 microns to about 200 microns.

The optically functional layer may, for example, comprise or be formed from an epoxide, a silicone and / or a silazane, for example a polydimethylsiloxane or a polydiphenylsiloxane / polydimethylsiloxane.

In yet another embodiment of the method, the optically functional layer can be formed as a matrix and distributed therein with at least one type of additive.

In one embodiment of the method, the one may comprise or be formed from an inorganic substance or an inorganic substance mixture.

In yet another embodiment of the method, an additive may comprise or be formed from one of the following substances or mixtures of substances or a stoichiometric compound: TiO ₂ , CeO ₂ , Bi ₂ O ₃ , ZnO, SnO ₂ , Al ₂ O ₃ , SiO ₂ , Y ₂ O ₃ , ZrO ₂ , phosphors, dyes, as well as UV-absorbing glass particles, suitable UV-absorbing metallic nanoparticles.

In yet another embodiment of the method, an additive as a particle, i. particulate additives, be formed.

In yet another embodiment of the method, an additive may have a curved surface, for example, similar or equal to an optical lens.

In yet another embodiment of the method, a particulate additive may have one of the following geometric shapes and / or a part of these geometric properties: spherical, aspherical, for example prismatic, ellipsoidal, hollow, compact, platelet or rod-shaped.

In one embodiment of the method, a particulate additive may comprise or be formed from a glass.

In one embodiment of the method, a particulate additive may have a mean grain size in a range of about 0.1 μm to about 30 μm, for example in a range of about 0.1 μm to about 1 μm.

In yet another embodiment of the method, an additive in the matrix may comprise a layer having a thickness of about 0.1 μm to about 100 μm.

In one embodiment of the method, the coupling layer may be formed such that the proportion of provided electromagnetic radiation is increased, which is coupled into the optoelectronic component and / or coupled out.

In other words, by means of the coupling layer, the proportion of electromagnetic radiation provided which becomes more reflected, for example totally reflected, can be reduced, for example by preventing total reflection or by increasing the critical angle of total reflection.

In one embodiment of the method, the scattering layer can be formed in such a way that the proportion of the electromagnetic radiation which is coupled in from the optoelectronic component and / or coupled out is increased.

In one embodiment of the method, the scattering layer can be formed as a matrix with scattering centers, wherein the scattering centers are distributed in the matrix and wherein the scattering centers are designed such that incident electromagnetic radiation is deflected.

In one embodiment of the method, the phosphor layer can be formed such that the provided electromagnetic radiation is changed in at least one optoelectronic property, in particular the configuration of the wavelength spectrum.

In one embodiment of the method, the phosphor layer can be formed such that the proportion of converted electromagnetic radiation in the optical path of the optoelectronic component unit is a function of the thickness of the phosphor layer, for example by the phosphor layer having an approximately homogeneous luminous emission concentration or an approximately homogeneous luminance. Having distribution in the layer cross section of the phosphor layer.

In one embodiment of the method, the phosphor layer may comprise or be formed from the group of substances: for example Ce ³⁺ doped garnets such as YAG: Ce and LuAG, for example (Y, Lu) ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ; Eu ²⁺ doped nitrides, for example CaAlSiN ₃ : Eu ²⁺ , (Ba, Sr, Ca) ₂ Si ₅ N ₈ : Eu ²⁺ ; Eu ²⁺ doped sulfdides, SIONe, SiAlON, orthosilicates, for example (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ ; Chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate: Eu) and / or SCAP, halophosphate.

In one embodiment of the method, the phosphor layer may comprise or be formed from one or more phosphors.

In one embodiment of the method, the at least one optoelectronic component unit may be formed on or above a substrate, the exposure of the contact pad having a removal of a part of the at least one optoelectronic component unit on or above a substrate.

In other words, to form the contact pad, a part of the layers of the optoelectronic component unit, for example a region of the layer cross section of the optoelectronic component unit extending through to the substrate, can be removed, for example by at least partially exposing the substrate.

The at least partially exposed substrate can, for example in the case of a contact pad, be electrically connected to at least one area of the optoelectronic component unit.

In one embodiment of the method, a sacrificial layer can be formed on or above the contact pad.

In other words, in the remote part of the optoelectronic component unit, a sacrificial layer can be applied to or over the at least partially exposed substrate. The sacrificial layer can be structured in such a way that a sacrificial layer is formed only in the area of the contact pad on or above the exposed substrate.

In an embodiment of the method, the exposure of the contact pad may include a photolithographic process, for example a lift-off process and / or a laser ablation.

In an embodiment of the method, exposing the contact pad may include removing the optically functional layer on or above the sacrificial layer.

In an embodiment of the method, exposing the contact pad may include removing the sacrificial layer on or above the contact pad, for example a wet-chemical removal.

In one embodiment of the method, the substance or the substance mixture of the sacrificial layer may have a lower chemical and / or physical resistance than the substance or the substance mixture of the optically functional layer, the substrate and / or the optoelectronic component unit.

In one embodiment of the method, the sacrificial layer may comprise or be formed from an organic substance, for example a resist, for example a polyimide or a polyacrylate.

In one embodiment of the method, the substance or the substance mixture of the sacrificial layer for at least one solvent can have a greater chemical solubility than that of the substance or the substance mixture of the optically functional layer.

In one embodiment of the method, the substance or the substance mixture of the sacrificial layer can be dissolved by means of a substance or substance mixture, for example liquefied, for which the substance or mixture of the optically functional layer is not soluble, for example, for the substance or the mixture of the optically functional layer is formed dimensionally stable.

In one embodiment of the method, further substances or mixtures of substances and / or layers of the optoelectronic component unit, for example the substance or the substance mixture of the at least one optoelectronic component unit, may not be soluble, for example dimensionally stable, with respect to the substance or the substance mixture the substance or the substance mixture of the sacrificial layer is removed, for example, is liquefied.

In one embodiment of the method, the optically functional layer can be formed at least on or above the optoelectronic component unit and / or the sacrificial layer.

In one embodiment of the method, the sacrificial layer may be formed with a width in a range of approximately 10 μm to approximately 100 μm, for example in a range of approximately 20 μm to approximately 70 μm, on or above the contact pad.

In one embodiment of the method, the formation of the sacrificial layer can have a simple or multiple damascene process.

In one embodiment of the method, the sacrificial layer can be formed on or above the contact pad, for example using one of the following methods:
Lamination, spraying, spin coating or a similar process.

In one embodiment of the method, the sacrificial layer can be structured laterally, for example by means of photolithographic methods.

In one embodiment of the method, the sacrificial layer can be structured laterally such that the sacrificial layer is formed on or above the contact pad.

In one embodiment of the method, the sacrificial layer in the region of the contact pad a have physical contact with an electrically conductive region of the substrate.

In one embodiment of the method, the substrate may be configured as a chip wafer, for example a silicon wafer or germanium wafer, on the surface of which an LED semiconductor layer may be formed.

In one embodiment of the method, the substrate may be configured as a temporary carrier, for example as a holder of a grinding device.

In one embodiment of the method, the substrate may be configured as a leadframe.

In various embodiments, a leadframe may, for example, be understood to mean a metal structure which has one or more metal pieces, for example, holds the metal pieces together by means of a metal frame.

In various embodiments, a leadframe may for example be formed from a flat metal plate, for example by means of a chemical method such as etching, or by a mechanical method such as punching.

For example, in various embodiments, a leadframe may include a metal frame having a plurality of later electrode-forming pieces of metal that may be connected to one another and to the metal frame by means of metal webs.

However, in various embodiments, a lead frame may also be understood as metal pieces formed from a metal frame described above which form electrodes, the pieces of metal no longer being physically joined together by the metal, i. For example, after the metal bars have already been removed. Thus, in various embodiments, the electrodes clearly form the leadframe itself or represent isolated parts of a leadframe.

In one embodiment of the method, the substrate may have an electrically insulating region and an electrically conductive region.

In one embodiment of the method, the substrate may be formed or arranged in the region of the removed part of the at least one optoelectronic component unit as a contact pad.

In one embodiment of the method, a part of the electrically conductive region of the substrate may be designed as a contact pad.

In one embodiment of the method, at least one contact pad can be set up as an electrode.

In one embodiment of the method, at least one contact pad can be set up as an electrode of the optoelectronic component unit or can be electrically connected to it.

In one embodiment of the method, the electrically insulating region can be set up as a carrier of the electrically conductive region.

In one embodiment of the method, the optoelectronic properties of the optoelectronic component unit can be formed by means of at least one measurable parameter.

In yet another refinement of the method, the measurable parameter may have one of the following measurement parameters with regard to electromagnetic radiation emitted or absorbed by the optoelectronic component unit: the brightness or the intensity; the wavelength spectrum or color valence; the viewing angle dependence; the polarization; the coherence length; the absorption and / or the efficiency.

The absorption of electromagnetic radiation may be important, for example, in photovoltaic devices (solar cells) and / or detectors for electromagnetic radiation to protect the detectors, for example in the case of high-energy radiation, for example X-radiation.

During measurement, a single measurement parameter or several measurement parameters can be determined simultaneously or successively, for example the wavelength spectrum of emitted electromagnetic radiation (color) and the brightness, for example by means of a photodetector after application of an operating voltage to the component.

After measuring the optoelectronic properties of the optoelectronic component unit, concrete compensation measures can be determined and the optoelectronic component unit can be processed to the common target property.

In yet another refinement of the method, the processing of at least one value of a measurement parameter of the optoelectronic properties of the optoelectronic component unit may be implemented by means of a compensatory measure.

A compensation measure can have a compensation element or a compensation process.

A compensating element may, for example, comprise applying a substance or substance mixture to the optoelectronic component unit, for example in the form of a coating or a self-supporting compensating element, for example in the form of a platelet or a film, which is applied to or over the optically functional layer.

An equalization process may include, for example, ablating a portion of the optically functional layer, for example, locally reducing the layer thickness of the optically functional layer or smoothing or roughening the surface of the optically functional layer.

In yet another embodiment, the compensation process or the compensating process may be one of the following processes: smoothing, roughening, reducing the layer thickness or structuring.

In one embodiment of the method, the processing of the at least one optical properties of the optically functional layer may include changing the optical thickness of the optically functional layer.

In one embodiment of the method, when the optical thickness of the optically functional layer is changed, the refractive index of the optically functional layer can be changed, at the same time the thickness of the optically functional layer remaining unchanged.

In one embodiment of the method, the change in the optical thickness of the optically functional layer may be formed by reducing the layer thickness of the optically functional layer, for example by means of a chemical process and / or a mechanical process, for example by means of a chemical mechanical polishing.

In one embodiment of the method, the change in the optical thickness of the optically functional layer may be formed by means of changing the structure of the substance or mixture of substances of the optically functional layer.

In one embodiment of the method, changing the structure of the optically functional layer may comprise compressing the substance or the mixture of substances of the optically functional layer.

In one embodiment of the method, changing the structure of the optically functional layer may comprise compressing the substance or the mixture of substances of the optically functional layer, for example compacting the optically functional layer, for example increasing the density of the optically functional layer.

In one embodiment of the method, increasing the density of the optically functional layer may, for example, comprise implanting, for example enriching, a substance or a substance mixture in the optically functional layer or in the optically functional layer.

In one embodiment of the method, increasing the density of the optically functional layer may include, for example, reducing the layer thickness of the optically functional layer upon obtaining the mass of the optically functional layer, i. reducing the layer thickness of the optically functional layer without ablating a part of the optically functional layer.

In one embodiment of the method, changing the structure of the optically functional layer may comprise decompressing the substance or mixture of the optically functional layer, for example, loosening, thinning, thinning, reducing the density of the optically functional layer, or the like.

In one embodiment of the method, changing the structure of the optically functional layer may comprise restructuring the substance or the substance mixture of the optically functional layer.

The substance or the substance mixture of the optically functional layer can have, for example, an optical anisotropy. The restructuring may, for example, change the orientation or orientation of the optically anisotropic substance or substance mixture and / or form a preferred direction of the optically anisotropic substance in the optically functional layer.

The restructuring can be formed, for example, by applying a force field on or to the optically functional layer, for example exerting a pressure, a tensile force, a shearing force and / or the application of a static or dynamic magnetic field, electric field or electromagnetic field.

In one embodiment of the method, the processing of the at least one optical properties of the optically functional layer can take place Irradiating the optically functional layer with electromagnetic radiation.

The optically functional layer can be formed, for example, as a phosphor layer. For example, irradiating the phosphor layer with electromagnetic radiation of specific wavelengths can lead to activation or inactivation of the phosphor.

The particular wavelengths of the electromagnetic radiation may be dependent on the specific design of the phosphor.

For example, activating phosphor may result in opening or forming chemical ring structures of a substance. The fabric may become a phosphor by means of opening or forming the ring structure.

For example, inactivating phosphor may include degrading a phosphor, such as bleaching and / or crosslinking the phosphor.

In the context of this description, an inactive phosphor may have other wavelength-converting properties than an active phosphor, and the activity or inactivity may be application-specific.

A phosphor which is inactive for the optoelectronic component unit can, for example, absorb electromagnetic radiation of a different wavelength than the electromagnetic radiation which is provided by the optoelectronic component unit, for example an LED chip.

In one embodiment of the method, the processing of the at least one optical properties of the optically functional layer may include forming or reducing scattering centers in or on the optically functional layer.

In one embodiment of the method, the formation or reduction of scattering centers of the optically functional layer may include, for example, generating cavities and / or structuring the surface of the optically functional layer, for example increasing the surface roughness of the optically functional layer, for example by a decision of optically functional layer with photons, for example irradiating the surface of the optically functional layer with a laser, for example a focused laser beam.

In one embodiment of the method, by means of irradiating the optically functional layer, for example, the substance or the substance mixture of the optically functional layer can be burned, vaporized or dissolved.

In one embodiment of the method, by means of irradiation, for example, the temperature of the substance or of the substance mixture can be locally increased. As a result, a thermal restructuring of the substance or of the substance mixture of the optically functional layer can be realized, for example, similar or equal to a tempering.

In one embodiment of the method, a compensation element can be formed as a second optically functional layer, wherein the second functional layer is formed in the beam path of the provided electromagnetic radiation of the first optically functional layer and / or the optoelectronic component unit.

In one embodiment of the method, the second optically functional layer can be designed or formed to be similar or identical to a first optically functional layer.

In yet another embodiment, two or more compensation measures may process different measurement parameters of the optoelectronic device unit toward the target properties, i. improve.

Improving an optoelectronic property can be understood to mean the approximation of the optoelectronic properties to the target property, for example changing the color valence of the emitted light of the component towards the target property, for example from white-yellow light to white-blue light.

In another embodiment, different compensation measures can be combined with one another in order to process the value of at least one measurement parameter of the optoelectronic properties of an optoelectronic component with respect to an optoelectronic target property.

As a combination of different compensation measures, for example, the combination of a compensation process and a compensation element can be understood.

In yet another embodiment, the value of two or more measurement parameters can be changed simultaneously by means of a compensatory measure.

In yet another embodiment, by means of a compensatory measure, the change of a Value of a measurement parameter of a previous compensation measure can be compensated.

For example, reducing the layer thickness or smoothing the surfaces of the first optically functional layer, which is arranged as a phosphor layer, on or above an optoelectronic component unit can reduce the proportion of wavelength-converted electromagnetic radiation, since the optically functional layer has less phosphor in reducing the layer thickness and when smoothing the surfaces of the first optically functional layer less unconverted electromagnetic radiation from the rough surface of the first optically functional layer in the first optically functional layer can be deflected.

In yet another embodiment, two or more equalization processes may have the same or different processes with the same or different process parameters from the group of process parameters: temperature, atmospheric composition of the atmosphere, plasma power or gas pressure, or similar conventional process parameters.

In yet another embodiment, the optoelectronic properties of the optoelectronic component can be processed in combination of two or more compensation elements for the target property.

The concrete compensation measures for the respective optoelectronic properties may be dependent on the specific design of the optoelectronic component, for example, on the color locus of the electromagnetic radiation provided by the optoelectronic component unit.

In one embodiment of the method, a second optically functional layer or a plurality of optically functional layers can be formed on or above the first optically functional layer.

In yet another embodiment, two or more optically functional layers in combination can process the optoelectronic properties of the optoelectronic component for the target property.

In one embodiment of the method, the second optically functional layer may be formed as: a scattering layer; a phosphor layer; and / or a coupling layer.

In one embodiment of the method, the two or more optically functional layers may process different parameters of the optoelectronic device towards the target properties, i. improve.

In one embodiment of the method, the optical effect of different optically functional layers can be combined with one another in order to process the value of at least one measurement parameter of the optoelectronic properties of the optoelectronic component unit to an optoelectronic target property.

As a combination of different optically functional layers, for example, the combination of a litter layer on or over a phosphor layer on or over an optoelectronic component unit can be understood.

In one embodiment of the method, the change of a value of a measurement parameter of a previous optically functional layer can be compensated by means of an optically functional layer.

In one embodiment of the method, the second optically functional layer may comprise or be formed from a different phosphor than the first optically functional layer. By means of different phosphors in the optical path of the optoelectronic component unit, for example, a two-dimensional color space can be spanned. Within the color space, each color locus can be achieved by processing the proportion of electromagnetic radiation converted by the phosphors.

In one embodiment of the method, a coupling layer can be formed on or over a phosphor layer.

In one embodiment of the method, the second optically functional layer can be formed as a scattering layer on or above a phosphor layer.

By means of the litter layer on or above the phosphor layer, the color component of wavelength-converted electromagnetic radiation at the mixed electromagnetic radiation can be adjusted. For example, the scattering layer may redirect a portion of the blue unconverted light provided by an opto-electronic device unit and passing the phosphor layer unconverted into the phosphor layer so that it can be converted in the phosphor layer. As a result, the proportion of wavelength-converted radiation in the mixed light can be increased.

The setting of the color locus by means of a scattering layer can, for example, by means of the thickness the litter layer and / or the phosphor layer can be adjusted.

In one configuration of the method, the at least one optoelectronic component unit can have a plurality of optoelectronic component units arranged next to one another on or above the substrate, wherein a saw trench is formed between the plurality of optoelectronic component units; wherein the at least one contact pad is formed in the saw trench.

In one embodiment of the method, the optically functional layer can be locally selectively processed on or above the optoelectronic component units.

In other words, the optically functional layer can be processed in response to the local optoelectronic properties of the plurality of optoelectronic component units on or above the common substrate to a target property.

In yet another embodiment of the method, the optoelectronic component can be formed as a radiation-emitting component.

In yet another embodiment of the method, the radiation-emitting optoelectronic component can be designed as a light-emitting diode.

In yet another embodiment of the method, the optoelectronic component can be formed as a radiation-detecting component.

In yet another embodiment of the method, the radiation-detecting optoelectronic component can be designed as a detector for electromagnetic radiation, for example as a photodiode, for example as a detector for X-radiation, ultraviolet radiation, light and / or infrared radiation.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1 schematic cross-sectional views of optoelectronic devices;

2 a diagram of a part of a method for producing an optoelectronic component, according to various embodiments;

3 schematic cross-sectional views of a partially completed, optoelectronic device in the method for producing an optoelectronic device, according to various embodiments;

4 schematic cross-sectional views of a partially completed, optoelectronic device in the method for producing an optoelectronic device, according to various embodiments;

5 a schematic cross-sectional view of an optoelectronic component, according to various embodiments;

6 Color loci of optoelectronic components, according to various embodiments;

7 a color locus distribution of optoelectronic components in the method for producing optoelectronic components, according to various embodiments;

8th a color locus distribution of optoelectronic components in the method for producing optoelectronic components, according to various embodiments; and

9 a diagram for processing a phosphor layer in the method for producing an optoelectronic component, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected,""connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1 shows schematic cross-sectional views of optoelectronic devices.

In the first view 100 is an optoelectronic device 102 shown.

In the edge region of the optoelectronic component 102 can Mesakanten 108 be educated.

On or above the optoelectronic component can be a phosphor plate 106 be applied, for example by means of an adhesive 104 be glued on.

In the second view 110 is an optoelectronic device 102 shown, wherein on or over the optoelectronic component 102 a phosphor layer 112 is applied, for example, is sprayed on.

The sprayed-on phosphor layer 112 may have a homogeneous layer thickness, for example, the phosphor layer 112 have a large surface roughness.

2 shows a diagram of a part of a method for producing an optoelectronic component, according to various embodiments.

In the schematic diagram 200 is shown a part of a method for producing an optoelectronic component.

An optically functional layer may be formed on or over one or more optoelectronic component units, a sacrificial layer, at least one contact pad.

The optically functional layer can be formed, for example, as a phosphor layer, a scattering layer and / or a coupling layer, for example a lacquer layer.

The training 202 The optically functional layer can be formed, for example, by spraying a dispersion, for example a coating dispersion and / or a phosphor dispersion.

The training 202 The optically functional layer may, for example, have a whole-area application of the substance or of the substance mixture of the optically functional layer onto or over the substrate, for example a chip wafer.

The optically functional layer may, for example, be a matrix and / or an optically functional matrix; and having embedded therein an optically functional substance, for example a phosphor and / or scattering centers.

In one embodiment, the substance or the substance mixture of the matrix, that is to say the matrix substance, can comprise or be formed from the group of substances: a silicone, a silazane, an epoxide or another formable substance with sufficiently high mechanical stability the solidification of the matrix material.

In one embodiment, the fabric or mixture of the matrix may have a Shore A hardness greater than about 60 after solidification of the optically functional layer.

A high hardness of the substance or substance mixture of the matrix may be necessary, for example, for a successful reduction of the layer thickness of the optically functional layer, for example for a grinding of the optically functional layer.

The substrate may, for example, be configured as a semiconductor wafer, for example a chip wafer comprising semiconductor chips.

After training 202 In the case of the optically functional layer, the bond pads, that is to say the contact pads for electrically contacting the semiconductor chips, and / or the saw trenches can be exposed between the semiconductor chips.

The exposure 204 Contact pads and / or saw trenches can be formed, for example, by means of a photolithographic process, for example a lift-off process.

After the exposure 204 the contact pads may be a sacrificial layer formed on or over the contact pads.

After that, the optically functional layer can be formed on or above the optoelectronic components and / or the sacrificial layers.

Subsequently, the optically functional layer can be reduced, for example ground, so that the sacrificial layers are exposed.

Subsequently, the sacrificial layers can be removed from the contact pads, for example wet-chemically, so that the contact pads and / or the saw trenches are exposed.

The exposed contact pads can be contacted electrically, for example. As a result, the optoelectronic properties of the optoelectronic components with optically functional layer can be determined.

In one embodiment, for example, the color locus of the electromagnetic radiation provided by the optoelectronic components may be determined, for example by applying an operating current to the electrically contacted contact pads and / or to the electrically contacted saw trench.

After determining 206 In the case of the optoelectronic properties of the optoelectronic components, the optically functional layer can be processed as a function of the measured optoelectronic properties.

The editing 208 For example, the optically functional layer may comprise reducing the layer thickness of the optically functional layer, for example, grinding a phosphor layer.

A high hardness of the phosphor layer, for example of the matrix material, can be important, for example, for precise processing of the optically functional layer. As a result, for example, when reducing the layer thickness of the optically functional layer, a constant thickness of the optically functional layer, for example with an accuracy of approximately +/- 1.5 μm, for example with an accuracy of approximately +/- 1 μm, over the entire surface of the optically functional layer, for example, the entire chip wafer can be realized.

As a result, for example, a narrow distribution of the color loci of the electromagnetic radiation provided by the optoelectronic components can be realized. Thereby, for example, the number of bins per chip wafer can be kept small, for example in a range of about one bin to about five bins per chip wafer.

The editing 208 of the optically functional layer toward an optoelectronic target property, it is possible by means of the measured optoelectronic properties, for example, to process a locally selected region of the optically functional layer.

If, for example, warm white color locations are to be set for the electromagnetic radiation provided, the processing of the phosphor layer to a constant thickness of the phosphor layer in the case of a chip wafer having a typical wavelength distribution of the optoelectronic components can lead to a broad distribution of the color loci. In this case, the phosphor layer can be selectively ground.

In one embodiment of the method, the phosphor layer can be selectively processed by, for example, machining a chip wafer selectively according to a map of the measured optoelectronic properties by means of a multi-axis robot with a suitable grinding head.

By means of the selected grinding, depending on the wavelength distribution on the chip wafer, semiconductor chips having a very narrow color locus distribution can be formed. In some cases, even all semiconductor chips can be formed in a single fine bin.

In a further embodiment, wavelength-bonded artificial wafers can be used. In this case, the chip wafer can be reduced to a constant thickness of the phosphor layer.

To form an artificial wafer, for example, wavelength-etched LED chips with the chip surface can be connected conclusively to a hard, very planar support, for example fixed, for example by means of a double-sided adhesive tape. The LED chips can then be introduced from behind (back) in a casting process or molding process in a polymeric material, for example, be surrounded with a molding material or potting material. After curing of the polymeric material, the LED chip may be surrounded by the polymeric material, for example, to the surface with which the LED chip is fixed on the carrier. The chip surface of the LED chip, which is connected to the carrier conclusive, can then be exposed, for example by means of a removal of the double-sided adhesive tape. Thereafter, for example, a phosphor layer may be formed on or over the exposed surface of the LED chip, for example, by spraying a phosphor on the exposed surface. Subsequently, the polymeric material surrounding the LED chip, for example, be removed, for example by means of a plasma process.

As a result, for example, a desired color locus for the electromagnetic radiation provided can be set locally on the common substrate.

3 shows schematic cross-sectional views of a partially completed, optoelectronic device in the method for producing an optoelectronic device, according to various embodiments.

In the view 300 is an optoelectronic component unit 302 , For example, a semiconductor chip 302 that can provide electromagnetic radiation, such as an LED chip, on or over a substrate 304 shown.

The substrate 304 can be a carrier 306 and an electrically conductive area 308 , For example, an electrically conductive layer 308 on or above the vehicle 306 , exhibit.

The carrier 306 For example, germanium, silicon and / or alumina, for example sapphire (Al ₂ O ₃ ), may be present or formed therefrom.

In one area 312 the optoelectronic component unit 302 may be the electrically conductive area 308 of the substrate 304 be exposed, ie be accessible from the outside.

The exposed area 312 can be used, for example, as a saw trench 312 and / or as a contact pad 312 be furnished.

The optoelectronic component unit 302 can in the field 312 For example, by laser ablation, a photolithographic process, for example, wet-chemical or a similar method of the substrate 304 be removed.

In the uncovered area 312 can be a sacrificial layer 314 be formed, for example, a polymer 314 , for example a resist 314 For example, a photoresist 314 , For example, a dry photoresist 314 For example, a polyimide or polyacrylate - shown in the view 310 ,

The sacrificial layer 314 For example, it may be formed with a thickness of about 50 μm, for example, laminated.

The application of the sacrificial layer 314 For example, over the entire surface on or above the optoelectronic component unit and / or the contact pad 312 be educated.

The sacrificial layer 314 can be structured, for example, by means of photolithography such that the paint webs 314 that is the sacrificial layer 314 , is formed with a width in a range of, for example, about 20 μm to about 70 μm on or above a saw trench and / or a contact pad. The paint bars 314 may cover the saw trenches and / or the contact pads at least partially or completely.

On or above the optoelectronic component unit 302 , the sacrificial shift 314 and the area 316 the at least partially exposed optoelectronic component 302 can be an optically functional layer 318 be trained - presented in the view 320 , for example, over the entire surface of or on the carrier 304 ,

The optically functional layer 318 may have a thickness greater than the thickness of the sacrificial layer 314 , In other words: the organic functional layer 318 can the sacrificial shift 314 around the area 322 overtop.

In other words: the optically functional layer 318 can be formed such that the sacrificial layer 314 the optoelectronic component unit 302 , and the at least partially exposed area 316 the optoelectronic component unit 302 completely covered, for example ( 322 ) are.

In other words: on the surface of the optoelectronic component unit 310 presented in view 320 may be the substance or mixture of the optical functional layer 318 be educated.

The optically functional layer 318 can be used as a litter layer, for example 318 , a phosphor layer 318 or similar optically functional layer 318 be furnished.

4 shows schematic cross-sectional views of a partially completed, optoelectronic device in the method for producing an optoelectronic device, according to various embodiments.

After solidification of the organically functional layer, for example curing of the substance or of the substance mixture of the matrix of the organically functional layer, the part can 322 the optically functional layer 318 above or on the sacrificial layer 314 be removed. In other words: the organically functional layer 318 can be removed such that the sacrificial layer 314 is exposed.

In other words: The exposure of the sacrificial layer 314 may be formed such that a smooth surface 402 ie a surface 402 with low roughness, is formed - shown in view 400 , Furthermore, the part 322 the optically functional layer 318 on or above the sacrificial layer 314 and the optoelectronic component unit 302 be removed.

The exposure of the sacrificial layer 314 can be formed for example by means of a chemical process and / or mechanical process, such as a chemical-mechanical polishing.

After exposing the sacrificial layer 314 in the optically functional layer 318 can the sacrificial shift 314 from the optically functional layer 318 be removed, for example, be removed, for example by means of a lift-off process.

The removal of the sacrificial layer 314 from the optically functional layer 318 can lead to an exposure of the electrically conductive area 308 of the substrate 304 lead - presented in view 410 , The removal of the sacrificial layer 314 from the optically functional layer 318 can therefore also as an exposure of contact pads 404 be understood.

In one embodiment, the at least one contact pad 404 as a sawmill 404 or the at least one sawing trench 404 be set up as a contact pad or sawmill 404 additionally as a contact pad 404 be set up.

The contact pads 404 can be energized, eliminating the optoelectronic devices unit 302 can provide electromagnetic radiation.

The provided electromagnetic radiation may be the optically functional layer 318 happen, for example, transmit or traverse, and be changed while in the optoelectronic properties.

By means of measuring the optoelectronic properties of the electromagnetic radiation provided, for example the color valence, the optoelectronic properties of the optoelectronic component unit can be determined 302 with optically functional layer 318 be determined.

Based on a color chart (see beispielswiese 6 ), for example, the necessary thickness of the phosphor layer 318 be determined in order to achieve the optoelectronic target property (see for example description of 9 ). As a result, it can be determined, for example, what proportion of the phosphor layer 318 should be removed - shown in view 420 ,

Based on the color chart, the optoelectronic properties of the optoelectronic component (s) can then be adapted such that the optoelectronic properties of the optoelectronic component (s) correspond to the predetermined, optoelectronic target properties, for example a desired chromaticity coordinate of the electromagnetic radiation provided.

An adaptation can, for example, comprise processing of the optical properties of the optically functional layer, for example a further reduction in the layer thickness of the optically functional layer, for example re-grinding of the luminophore layer.

In other words, for example by means of the color loci of the optoelectronic component unit 302 provided electromagnetic radiation, the influence of the optically functional layer on the optoelectronic properties of the optoelectronic component unit 302 provided electromagnetic radiation, for example, the chromaticity of the electromagnetic radiation from the phosphor of the phosphor layer 318 is provided and the color locus of the optoelectronic target property of the optoelectronic component, the proportion of the optically functional layer 318 to be determined, that of the optically functional layer 318 should be removed in order to achieve the optoelectronic target property.

The thickness of the part 408 the optically functional layer 318 above or on the optoelectronic component unit 302 For example, it may be less than the thickness of the area 406 the optically functional layer 318 before processing the optical properties of the optically functional layer 318 ,

5 shows a schematic cross-sectional view of an optoelectronic component, according to various embodiments.

Shown is an optoelectronic device which has been produced according to various embodiments of the method.

By means of the method, the optically functional layer 318 the mesa edges 108 the optoelectronic component unit 302 cover, for example, completely cover, for example by the optically functional layer 318 a physical contact with the Mesakanten 108 the optoelectronic component unit 302 formed.

In addition, the optically functional layer 318 a smooth, defined surface 502 exhibit

6 shows color loci of optoelectronic devices according to various embodiments.

In view 600 is a color charts shown with the color coordinates C _y 604 and C _x 602 ,

The provided electromagnetic radiation can be a color locus, for example the color locus 610 , exhibit.

Also shown are fine bins 4T, 5T, 5S, 6S, 7S, highlighted is, for example, the fine bin 608 (6S).

Within a fine bin, the color locations are assigned the same color valence.

Changing the color frequency of the electromagnetic radiation provided by an optoelectronic component unit may make the color location equal to the displayed color gradient 606 ie along the line 606 , or similar to a line parallel to the line 606 , change.

Changing the color locus of the electromagnetic radiation provided by an optoelectronic component unit can be formed, for example, by means of the production dispersion in the manufacture of the optoelectronic components, for example in a wavelength range of the provided electromagnetic radiation of the designed wavelength in a range of approximately 5 nm to approximately 50 nm , for example, about 10 nm.

The production spread of the wavelength of the electromagnetic radiation provided by an optoelectronic component unit can be realized for example by means of a fluctuation of the local concentration of the doping of the semiconducting layers of the optoelectronic components on a common substrate.

Changing the layer thickness of the optically functional layer, for example the phosphor layer, can be the color locus, for example along the line shown 612 change. Depending on the color locus of the electromagnetic radiation provided or received by the optoelectronic components, the course of the color locus of the optically functional layer can also be represented as a line parallel to the illustrated line 612 run.

After fixing 206 the optoelectronic properties of the optoelectronic component unit, for example the coordinate in the color chart, the proportion of the optically functional layer can be determined by which the optically functional layer in the light path of the optoelectronic component unit is to be reduced, so that the optoelectronic properties of the optoelectronic target property correspond, for example, the marked fine bin 608 ,

7 shows a color locus distribution of optoelectronic devices in the process for producing optoelectronic devices, according to various embodiments.

Shown is a color distribution 702 in a color chart 700 with the colors Cx 602 and Cy 604 Optoelectronic components having a phosphor layer as an optically functional layer, according to various embodiments.

The formation of the optically functional layer and / or the optoelectronic components may, for example, be similar or equal to one of the embodiments of the descriptions of 2 and or 3 be trained and / or set up.

The optoelectronic components can, for example, provide electromagnetic radiation, for example in a wavelength range from approximately 420 nm to approximately 450 nm.

For example, the phosphor layer optoelectronic devices can provide electromagnetic radiation that can be associated with ultra-white light, such as a correlated color temperature of about 6000K.

The color loci of the optoelectronic components in the color locus distribution 702 can be close to each other, ie all optoelectronic components, for example, on a common carrier, within the color locus distribution 702 be formed within a bin range.

In other words, the processing of the optically functional layer, for example the layer thickness of the phosphor layer, can allow an adaptation of the color locus distribution in fine bins.

8th shows a color locus distribution of optoelectronic devices in the process for producing optoelectronic devices, according to various embodiments.

Shown is a color distribution 802 in a color chart 800 with the colors Cx 602 and Cy 604 Optoelectronic components having a phosphor layer as an optically functional layer, according to various embodiments.

The formation of the optically functional layer and / or the optoelectronic components may, for example, be similar or equal to one of the embodiments of the descriptions of 2 and or 3 be trained and / or set up.

The optoelectronic components can, for example, provide electromagnetic radiation in one

Wavelength range from about 450 nm to about 470 nm, for example with a wavelength of about 460 nm.

For example, the phosphor layer optoelectronic devices may provide electromagnetic radiation associated with a standard white light, for example, having a correlated color temperature of about 5,000 K.

The color loci of the optoelectronic components in the color locus distribution 802 For example, all optoelectronic components, for example on a common substrate, can be distributed within the color locus distribution 802 be formed within a bin range.

In other words, the optoelectronic components can be designed such that the optoelectronic components already have a low bin distribution, for example, into a few bins, for example four (shown), can be divided.

Processing of the optically functional layer, for example the phosphor layer, can then be optional, for example.

Should the optoelectronic components of the color locus distribution 802 By means of the processing of the optically functional layer, it can not be brought into a target bin, a second optically functional layer may be necessary, for example a second phosphor layer, for example with a different phosphor than in the first phosphor layer. In other words, mixing different phosphors, that is, mixing two or more phosphors, may be necessary.

9 shows a diagram for processing a phosphor layer in the method for producing an optoelectronic component, according to various embodiments.

In the diagram 900 is the relative thickness 902 a phosphor layer with respect to the thickness of a phosphor layer of an optoelectronic component, which provides electromagnetic radiation having a wavelength in a range of about 426 nm to about 443 nm, with a center of gravity of about 436 nm, as a function 906 the wavelength 904 represented by the optoelectronic component unit provided electromagnetic radiation.

In other words, in the case of optoelectronic component units which provide electromagnetic radiation having a wavelength of less than approximately 438 nm, a part of the phosphor layer can be removed with respect to the thickness of the phosphor layer in order to form the same optoelectronic properties as the optoelectronic component unit provides electromagnetic radiation having a wavelength of about 438 nm.

For optoelectronic device packages that provide electromagnetic radiation having a wavelength greater than about 438 nm, a thicker phosphor layer should remain with respect to the thickness of the phosphor layer on or over the optoelectronic device package to form the same optoelectronic properties as the optoelectronic device package which provides electromagnetic radiation having a wavelength of about 438 nm.

The provided electromagnetic radiation of the optoelectronic components with a phosphor layer can have, for example, a color locus which has a correlated color temperature of approximately 3000 K.

In view 910 is the bin distribution 910 the optoelectronic components of the view 900 after processing the phosphor layer, ie after processing the optically functional layer, wherein the emission wavelengths of the underlying InGaN chips range from about 426 nm to about 443 nm with a centroid of the distribution at about 436 nm. The different bins can have different optoelectronic properties.

In the bin distribution 910 It is shown that the optoelectronic components despite a broad distribution of optoelectronic properties ( 900 ) of the optoelectronic components on a common substrate, the optoelectronic components after the processing of the phosphor layer substantially in two bins 912 . 914 can be divided.

About 99% of the optoelectronic devices on a common carrier may, according to the method of fabricating optoelectronic devices, according to various embodiments, have optoelectronic properties in the target bin 914 exhibit.

For optoelectronic devices which provide electromagnetic radiation having a wavelength greater than about 442 nm, the target bin can not be achieved, for example, by processing the thickness of the phosphor layer, for example, because the longer wavelength, blue light no longer completely, by means of the phosphor thickness causes correctable shift of the color coordinates in the direction of greater Cy values.

In other words, by means of the method for producing optoelectronic components, the number of optoelectronic components in different bins 912 . 914 be reduced, for example to two bins 912 . 914 (Shown).

In various embodiments, a method for manufacturing an optoelectronic component is provided, with which wafer-level LED chips can be produced, which can provide white light with a narrow color locus distribution. Additionally, when applying a phosphor to or via the LED chips, an adhesive for fixing the phosphor can be dispensed with. As a result, optoelectronic device units can be formed with improved heat dissipation which in addition provides higher intensity electromagnetic radiation, i. with a higher brightness. The increase in intensity can be realized, for example, by improving the coupling of the electromagnetic radiation provided by the optoelectronic components into the phosphor layer without adhesive. Furthermore, optoelectronic devices can be made which can provide white light and have an edge length of less than about 0.75 mm. Furthermore, with respect to optoelectronic components with adhesive-fixed phosphor laminae, the mesa edges of the optoelectronic component units can be covered with luminescent material, whereby the increased emission of light from the mesa edges, for example of blue light (blue-piping), can be prevented. Thereby, the color homogeneity of the light provided by the semiconductor chip can be improved.

Claims (26)

Procedure ( 200 ) for producing an optoelectronic component ( 500 ), the procedure ( 200 ) comprising: forming ( 202 ) an optically functional layer ( 318 ) in the optical path of at least one optoelectronic component unit ( 302 ), Wherein the at least one optoelectronic component unit ( 302 ) receives and / or provides electromagnetic radiation, - wherein the optically functional layer ( 318 ) is adapted to change the optoelectronic properties of the electromagnetic radiation provided by the at least one optoelectronic component unit ( 302 ) is received and / or provided; Uncover ( 204 ) at least one contact pad ( 404 ), wherein the at least one contact pad ( 404 ) is electrically connected to the at least one optoelectronic component unit ( 302 ) connected is; Measure up ( 206 ) at least one optoelectronic property of the at least one optoelectronic component unit ( 302 ) with optically functional layer ( 318 ), wherein the at least one optoelectronic property by means of the at least one exposed contact pad ( 404 ) is measured; To edit ( 208 ) at least one optical property of the optically functional layer ( 318 ) such that the at least one measured optoelectronic property of the at least one optoelectronic component unit ( 302 ) with optically functional layer ( 318 ) is changed to an optoelectronic target property. Method according to claim 1, wherein the optically functional layer ( 318 ) is formed as: - a litter layer ( 318 ); A phosphor layer ( 318 ); and / or a coupling layer ( 318 ). Method according to claim 2, wherein the coupling layer ( 318 ) is formed such that the proportion of provided electromagnetic radiation is increased, which is coupled into the optoelectronic component and / or decoupled. Method according to claim 2, wherein the litter layer ( 318 ) is formed such that the proportion of the electromagnetic radiation is increased, which is coupled from the optoelectronic component and / or decoupled. Method according to claim 2, wherein the phosphor layer ( 318 ) is formed such that the provided electromagnetic radiation is changed in at least one optoelectronic property, in particular the configuration of the wavelength spectrum. Method according to one of claims 1 to 5, wherein on or above the first optically functional layer ( 318 ) a second optically functional layer is formed.  Method according to claim 6, wherein the second optically functional layer is formed as: - a litter layer; A phosphor layer; and or A coupling layer. Method according to one of claims 6 or 7, wherein the second optically functional layer comprises or is formed from a different phosphor than the first optically functional layer ( 318 ). Method according to one of claims 1 to 8, wherein the at least one optoelectronic component unit ( 302 ) on or over a substrate ( 304 ), wherein the exposure ( 204 ) of the contact pad ( 404 ) removing a part of the at least one optoelectronic component unit ( 302 ) on or over a substrate ( 304 ) having. Process according to claim 9, wherein the substrate ( 304 ) in the region of the removed part of the at least one optoelectronic component unit ( 302 ) as a contact pad ( 404 ) is formed or set up. Method according to one of claims 9 or 10, wherein a sacrificial layer ( 314 ) on or above the contact pad ( 404 ) is formed. Method according to claim 11, wherein the sacrificial layer ( 314 ) comprises or is formed from an organic substance, in particular a resist. Method according to one of claims 11 or 12, wherein the substance or the mixture of substances of the optically functional layer ( 318 ) at least on or via the at least one optoelectronic component unit ( 302 ) and the sacrificial layer ( 314 ) is applied. Method according to one of claims 11 to 13, wherein the exposure ( 204 ) of the contact pad ( 404 ) removing the optically functional layer ( 318 ) on or above the sacrificial layer ( 314 ) having. Method according to one of claims 11 to 14, wherein the exposure ( 204 ) of the contact pad ( 404 ) removing the sacrificial layer ( 314 ) on or above the contact pad ( 404 ) having. Method according to one of Claims 1 to 15, - the at least one optoelectronic component unit ( 302 ) on or above the substrate ( 304 ) has a plurality of juxtaposed optoelectronic component units, wherein a saw trench is formed between the plurality of optoelectronic component units; - wherein the at least one contact pad ( 404 ) in the saw trench ( 404 ) is formed. A method according to claim 16, wherein the substrate ( 304 ) as a chip wafer ( 304 ) is set up. Method according to one of claims 16 or 17, wherein the substrate ( 304 ) an electrically insulating region ( 306 ) and an electrically conductive region ( 308 ) having. A method according to claim 18, wherein a part ( 404 ) of the electrically conductive region ( 308 ) of the substrate ( 304 ) as a contact pad ( 404 ) is set up. A method according to claim 19, wherein the electrically insulating region ( 306 ) as carrier ( 306 ) of the electrically conductive region ( 308 ) is set up. Method according to one of claims 1 to 20, wherein the exposure ( 204 ) of the contact pad ( 404 ) has a photolithographic process, in particular a lift-off process and / or a laser ablation.  Method according to one of claims 1 to 21, wherein the at least one measured optoelectronic property has a property with respect to electromagnetic radiation from the group of properties: - the intensity, - the color location, - the polarization, and / or - the coherence length. Method according to one of claims 1 to 21, wherein the processing ( 208 ) of the at least one optical property of the optically functional layer ( 318 ) changing the optical thickness of the optically functional layer ( 318 ) having. The method of claim 23, wherein altering the optical thickness comprises reducing the layer thickness of the optically functional layer ( 318 ) having. A method according to claim 24, wherein reducing the layer thickness of the optically functional layer ( 318 ) has a chemical process and / or mechanical process, in particular a chemical mechanical polishing. Method according to one of claims 16 to 25, wherein the optically functional layer ( 318 ) is locally selectively processed on or above the optoelectronic component units.

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