DE102011082427A1 - Laser beam processing device comprises non-contact support means for supporting workpiece, laser beam application means, processing supply means for supplying workpiece relative to laser beam application means, and fragment tightening means - Google Patents
Laser beam processing device comprises non-contact support means for supporting workpiece, laser beam application means, processing supply means for supplying workpiece relative to laser beam application means, and fragment tightening means Download PDFInfo
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- DE102011082427A1 DE102011082427A1 DE102011082427A DE102011082427A DE102011082427A1 DE 102011082427 A1 DE102011082427 A1 DE 102011082427A1 DE 102011082427 A DE102011082427 A DE 102011082427A DE 102011082427 A DE102011082427 A DE 102011082427A DE 102011082427 A1 DE102011082427 A1 DE 102011082427A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
HINTERGRUND DER ERFINDUNGBACKGROUND OF THE INVENTION
Technisches GebietTechnical area
Die vorliegende Erfindung betrifft eine Laserstrahlbearbeitungsvorrichtung, und insbesondere eine Laserstrahlbearbeitungsvorrichtung zum Bearbeiten einer auf einem transparenten Substrat gewachsenen Funktionsschicht mit einem Laserstrahl.The present invention relates to a laser beam processing apparatus, and more particularly to a laser beam processing apparatus for processing a functional layer grown on a transparent substrate with a laser beam.
Stand der TechnikState of the art
Solarzellensubstrate haben zum Beispiel Funktionsschichten, die eine transparente Elektrodenschicht, eine Solarzellenschicht und eine Gegenelektrodenschicht aufweisen, die nacheinander auf einem transparenten Substrat, wie einem Glassubstrat, abgelagert sind. Gemäß einer Herstellungsbearbeitung für Solarzellensubstrate ist es notwendig, eine Vielzahl von Trennnuten (Bearbeitungslinien) in den Funktionsschichten zu Isolationszwecken auszubilden. Es ist ein Verfahren zum derart genauen Ausbilden von Bearbeitungslinien, dass sich benachbarte Bearbeitungslinien nicht kreuzen, in Bezug auf die Bearbeitung von Solarzellensubstraten bekannt (siehe zum Beispiel veröffentlichte
Gegenstand der ErfindungSubject of the invention
Die Laserstrahlbearbeitungsvorrichtung muss einen hochenergetischen Laserstrahl erzeugen, der direkt auf die Funktionsschichten aufgebracht wird, um all die Schichten von der Fläche der obersten Funktionsschicht in einer zu bearbeitenden Region hinunter auf die Grenzschicht zwischen der untersten Funktionsschicht und dem Glassubstrat zu verdampfen. Allerdings neigt der von der Laserstrahlbearbeitungsvorrichtung emittierte hochenergetische Laserstrahl dazu, das Glassubstrat zu beschädigen. Die Laserstrahlbearbeitungsvorrichtung muss die Intensität des Laserstrahls fein einstellen und versagt beim effizienten Entfernen der Funktionsschichten in der zu bearbeitenden Region vom Glassubstrat.The laser beam processing apparatus must generate a high energy laser beam which is applied directly to the functional layers to evaporate all the layers down from the surface of the top functional layer in a region to be processed down to the interface between the bottom functional layer and the glass substrate. However, the high-energy laser beam emitted from the laser beam processing apparatus tends to damage the glass substrate. The laser beam processing apparatus must finely adjust the intensity of the laser beam and fail to efficiently remove the functional layers in the region to be processed from the glass substrate.
Es ist ein Ziel der vorliegenden Erfindung, eine Laserstrahlbearbeitungsvorrichtung bereitzustellen, die Funktionsschichten in einer zu bearbeitenden Region von einem transparenten Substrat effizient entfernen kann.It is an object of the present invention to provide a laser beam processing apparatus that can efficiently remove functional layers in a region to be processed from a transparent substrate.
Gemäß einem Aspekt der vorliegenden Erfindung ist eine Laserstrahlbearbeitungsvorrichtung vorgesehen, die aufweist: ein Nicht-Kontakt-Stützmittel zum Stützen eines ein transparentes Substrat und eine hierauf angeordnete Funktionsschicht aufweisenden Werkstücks außer Kontakt hiermit, ein Laserstrahlaufbringmittel zum Aufbringen eines Laserstrahls auf das durch das Nicht-Kontakt-Stützmittel gestützte Werkstück, wobei das Laserstrahlaufbringmittel einen Lasergenerator zum Emittieren eines Laserstrahls und eine Objektivlinse zum Fokussieren des vom Lasergenerator durch das transparente Substrat auf eine Grenzschicht zwischen dem transparenten Substrat und der Funktionsschicht emittierter Laserstrahl aufweist, ein Bearbeitungszuführmittel zum Zuführen des Werkstücks relativ zum Laserstrahlaufbringmittel, und ein Bruchstückanziehmittel zum Anziehen von Bruchstücken, die erzeugt werden, wenn die Funktionsschicht durch den Laserstrahl erwärmt wird, der durch des Laserstrahlaufbringmittel auf das Werkstück aufgebracht wird, wobei das Bruchstückanziehmittel in Ausrichtung mit der Objektivlinse näher zur Funktionsschicht als zum transparenten Substrat angeordnet ist.According to one aspect of the present invention, there is provided a laser beam machining apparatus comprising: non-contact supporting means for supporting a workpiece having a transparent substrate and a functional layer disposed thereon out of contact therewith, laser beam applying means for applying a laser beam to the non-contact Support-supported workpiece, wherein the laser beam applying means comprises a laser generator for emitting a laser beam and an objective lens for focusing the laser beam emitted from the laser generator through the transparent substrate onto an interface between the transparent substrate and the functional layer, a machining feed means for feeding the workpiece relative to the laser beam applying means, and a fragment attracting means for attracting debris generated when the functional layer is heated by the laser beam irradiated by the laser beam is applied to the workpiece, wherein the fragment attracting means is arranged in alignment with the objective lens closer to the functional layer than to the transparent substrate.
Gemäß der vorliegenden Erfindung kann die Laserstrahlbearbeitungsvorrichtung eine zu bearbeitende Region der Funktionsschicht effektiv vom transparenten Substrat entfernen.According to the present invention, the laser beam processing apparatus can effectively remove a region of the functional layer to be processed from the transparent substrate.
Das obige und andere Ziele, Merkmale und Vorteile der vorliegender Erfindung und die Art der Realisierung dieser wird ersichtlicher, und die vorliegende Erfindung selbst ist am besten zu verstehen bei einer Durchsicht der folgenden Beschreibung und der beigefügten Ansprüche unter Bezugnahme auf die angehängten Zeichnungen, die einige bevorzugte Ausführungsformen der Erfindung zeigen.The above and other objects, features and advantages of the present invention and the manner of realizing the same will become more apparent, and the present invention will be best understood by reviewing the following description and appended claims with reference to the attached drawings, in which: show preferred embodiments of the invention.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Detaillierte Beschreibung der bevorzugten AusführungsformenDetailed Description of the Preferred Embodiments
Eine Laserstrahlbearbeitungsvorrichtung gemäß den bevorzugten Ausführungsformen der vorliegenden Erfindung wird unter Bezugnahme auf die Zeichnungen nachfolgend beschrieben. Es ist anzumerken, dass die Zeichnungen derart schematisch sind, dass gezeigte Komponenten und Substrate Dicken und andere Dimensionen mit Verhältnissen haben, die sich von den tatsächlichen Dimensionsverhältnissen unterscheiden, und die gleichen Komponenten und Substrate verschiedene Dimensionsbeziehungen und Verhältnisse in unterschiedlichen Zeichnungen aufweisen.A laser beam processing apparatus according to the preferred embodiments of the present invention will be described below with reference to the drawings. It should be noted that the drawings are so schematic that shown components and substrates have thicknesses and other dimensions with ratios that differ from the actual dimensional ratios, and the same components and substrates have different dimensional relationships and ratios in different drawings.
Erste AusführungsformFirst embodiment
Wie in
Wie in
Motoren
Wie in
Wie in
Wie in
Wie in
Die Laserstrahlaufbringmittel
Wie in
Wie in
Die Stützbasis
Ein Betrieb der Laserstrahlbearbeitungsvorrichtung
Zu dieser Zeit werden die Vorder- und Rückstützfinger
Zum Bearbeiten einer zu bearbeitenden Region (zu bearbeitenden Linie) S (Bezug nehmend auf
Zum Bearbeiten einer zu bearbeitenden Region S des Solarzellensubstrats
Gemäß der vorliegenden Ausführungsform wird, nachdem der durch die Strichpunktlinien indizierte Laserstrahl auf dem Solarzellensubstrat
Selbst ohne die Notwendigkeit des Erwärmens der gesamten zu bearbeitenden Region S der Funktionsschicht
Die Laserstrahlbearbeitungsvorrichtung
Zweite AusführungsformSecond embodiment
Wie in
Wie in
Die Laserstrahlbearbeitungsvorrichtung
Modifikationenmodifications
Während die bevorzugten Ausführungsformen der vorliegenden Erfindung zuvor beschrieben wurden, soll die vorliegende Offenbarung nicht auf die obige Beschreibung und die begleitenden Zeichnungen der bevorzugten Ausführungsformen beschränkt sein. Verschiedene Veränderungen und Modifikationen, die für die in der Technik Bewanderten ersichtlich sind, können basierend auf der obigen Offenbarung ausgeführt werden, ohne vom Bereich der vorliegenden Offenbarung abzuweichen. Zum Beispiel, während das Solarzellensubstrat
Während die Befestigungsbasis
Während die optische Faser
In der ersten und zweiten Ausführungsform werden das Laserstrahlaufbringmittelpaar
Die vorliegende Erfindung ist nicht auf die Details der zuvor beschriebenen bevorzugten Ausführungsformen beschränkt. Der Bereich der Erfindung wird durch die beigefügten Ansprüche definiert, und alle Veränderungen und Modifikationen, die innerhalb die Äquivalenz des Bereichs der Ansprüche fallen, sind deshalb durch die vorliegende Erfindung zu umfassen.The present invention is not limited to the details of the preferred embodiments described above. The scope of the invention is defined by the appended claims, and all changes and modifications that fall within the equivalence of the scope of the claims are therefore to be embraced by the present invention.
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- JP 2004-170455 [0002] JP 2004-170455 [0002]
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010204952A JP2012055966A (en) | 2010-09-13 | 2010-09-13 | Laser beam machining device |
JP2010-204952 | 2010-09-13 |
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DE102011082427A1 true DE102011082427A1 (en) | 2012-03-15 |
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DE102011082427A Pending DE102011082427A1 (en) | 2010-09-13 | 2011-09-09 | Laser beam processing device comprises non-contact support means for supporting workpiece, laser beam application means, processing supply means for supplying workpiece relative to laser beam application means, and fragment tightening means |
Country Status (3)
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JP (1) | JP2012055966A (en) |
CN (1) | CN102398113A (en) |
DE (1) | DE102011082427A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20190088507A1 (en) * | 2015-02-27 | 2019-03-21 | The Japan Steel Works, Ltd. | Gas floated workpiece supporting apparatus and noncontact workpiece support method |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6778080B2 (en) * | 2016-10-20 | 2020-10-28 | 株式会社日本製鋼所 | Laser machining equipment and laser machining method |
JP7402081B2 (en) * | 2020-02-27 | 2023-12-20 | 本田技研工業株式会社 | laser processing equipment |
CN111408840B (en) * | 2020-04-07 | 2021-10-19 | 哈尔滨工业大学(威海) | Device for assisting underwater laser deposition or material increase through induction heating and use method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004170455A (en) | 2002-11-15 | 2004-06-17 | Mitsubishi Heavy Ind Ltd | Laser processing apparatus, laser processing system and solar cell |
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JPS53114347A (en) * | 1977-12-07 | 1978-10-05 | Toshiba Corp | Working method for semiconductor device |
JP4845280B2 (en) * | 2001-03-21 | 2011-12-28 | 株式会社半導体エネルギー研究所 | Laser annealing equipment |
TWI226303B (en) * | 2002-04-18 | 2005-01-11 | Olympus Corp | Substrate carrying device |
BRPI0511797A (en) * | 2004-06-03 | 2008-01-15 | Oc Oerlikon Balzers Ag | table for receiving a workpiece, as well as a process for processing a workpiece on such a table |
JP4467632B2 (en) * | 2008-03-24 | 2010-05-26 | 丸文株式会社 | Beam processing apparatus, beam processing method, and beam processing substrate |
-
2010
- 2010-09-13 JP JP2010204952A patent/JP2012055966A/en active Pending
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2011
- 2011-09-09 DE DE102011082427A patent/DE102011082427A1/en active Pending
- 2011-09-09 CN CN2011102681460A patent/CN102398113A/en active Pending
Patent Citations (1)
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JP2004170455A (en) | 2002-11-15 | 2004-06-17 | Mitsubishi Heavy Ind Ltd | Laser processing apparatus, laser processing system and solar cell |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190088507A1 (en) * | 2015-02-27 | 2019-03-21 | The Japan Steel Works, Ltd. | Gas floated workpiece supporting apparatus and noncontact workpiece support method |
US10418262B2 (en) * | 2015-02-27 | 2019-09-17 | The Japan Steel Works, Ltd. | Gas floated workpiece supporting apparatus and noncontact workpiece support method |
Also Published As
Publication number | Publication date |
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CN102398113A (en) | 2012-04-04 |
JP2012055966A (en) | 2012-03-22 |
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