DE102011006076A8 - Vorrichtung zur Herstellung von Silizium-Blöcken - Google Patents

Vorrichtung zur Herstellung von Silizium-Blöcken Download PDF

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Publication number
DE102011006076A8
DE102011006076A8 DE102011006076A DE102011006076A DE102011006076A8 DE 102011006076 A8 DE102011006076 A8 DE 102011006076A8 DE 102011006076 A DE102011006076 A DE 102011006076A DE 102011006076 A DE102011006076 A DE 102011006076A DE 102011006076 A8 DE102011006076 A8 DE 102011006076A8
Authority
DE
Germany
Prior art keywords
producing silicon
silicon blocks
blocks
producing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102011006076A
Other languages
English (en)
Other versions
DE102011006076A1 (de
DE102011006076B4 (de
Inventor
Günter RADEL
Doreen NAUERT
Matthias Trempa
Kaspars DADZIS
Dr. Dietrich Marc
Stefan PROSKE
Dr. Friedrich Jochen
Dr. Freudenberg Bernhard
Dr. Reimann Christian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Deutsche Solar GmbH
SolarWorld Industries Sachsen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, Deutsche Solar GmbH, SolarWorld Industries Sachsen GmbH filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE102011006076.6A priority Critical patent/DE102011006076B4/de
Publication of DE102011006076A1 publication Critical patent/DE102011006076A1/de
Publication of DE102011006076A8 publication Critical patent/DE102011006076A8/de
Application granted granted Critical
Publication of DE102011006076B4 publication Critical patent/DE102011006076B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE102011006076.6A 2010-04-01 2011-03-24 Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken Expired - Fee Related DE102011006076B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102011006076.6A DE102011006076B4 (de) 2010-04-01 2011-03-24 Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102010013906.8 2010-04-01
DE102010013906 2010-04-01
DE102010014723 2010-04-12
DE102010014723.0 2010-04-12
DE102011006076.6A DE102011006076B4 (de) 2010-04-01 2011-03-24 Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken

Publications (3)

Publication Number Publication Date
DE102011006076A1 DE102011006076A1 (de) 2011-10-06
DE102011006076A8 true DE102011006076A8 (de) 2013-02-07
DE102011006076B4 DE102011006076B4 (de) 2016-07-28

Family

ID=44650249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011006076.6A Expired - Fee Related DE102011006076B4 (de) 2010-04-01 2011-03-24 Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken

Country Status (1)

Country Link
DE (1) DE102011006076B4 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1095688A (ja) 1996-09-21 1998-04-14 Tokyo Denshi Yakin Kenkyusho:Kk 単結晶体の製造方法
JP2000327474A (ja) 1999-05-24 2000-11-28 Mitsubishi Materials Corp 結晶シリコンの製造方法及び結晶シリコン製造用ルツボ
WO2010005705A1 (en) 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898051A (en) 1973-12-28 1975-08-05 Crystal Syst Crystal growing
CN101479410A (zh) 2006-06-23 2009-07-08 Rec斯坎沃佛股份有限公司 用于使半导体级多晶硅锭料定向凝固的方法和坩埚

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1095688A (ja) 1996-09-21 1998-04-14 Tokyo Denshi Yakin Kenkyusho:Kk 単結晶体の製造方法
JP2000327474A (ja) 1999-05-24 2000-11-28 Mitsubishi Materials Corp 結晶シリコンの製造方法及び結晶シリコン製造用ルツボ
WO2010005705A1 (en) 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification

Also Published As

Publication number Publication date
DE102011006076A1 (de) 2011-10-06
DE102011006076B4 (de) 2016-07-28

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