DE102010006314A1 - Photovoltaische Mehrfach-Dünnschichtsolarzelle - Google Patents

Photovoltaische Mehrfach-Dünnschichtsolarzelle Download PDF

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Publication number
DE102010006314A1
DE102010006314A1 DE201010006314 DE102010006314A DE102010006314A1 DE 102010006314 A1 DE102010006314 A1 DE 102010006314A1 DE 201010006314 DE201010006314 DE 201010006314 DE 102010006314 A DE102010006314 A DE 102010006314A DE 102010006314 A1 DE102010006314 A1 DE 102010006314A1
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DE
Germany
Prior art keywords
layer
solar cell
thin
film solar
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE201010006314
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German (de)
English (en)
Inventor
Clemens 26129 Feser
Jürgen 26131 Lacombe
Karsten von Dr. 26129 Maydell
Carsten Prof. Dr. 26129 Agert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ewe-Forschungszentrum fur Energietechnologie E V 26129
EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV
Original Assignee
Ewe-Forschungszentrum fur Energietechnologie E V 26129
EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ewe-Forschungszentrum fur Energietechnologie E V 26129, EWE FORSCHUNGSZENTRUM fur ENERGIETECHNOLOGIE EV filed Critical Ewe-Forschungszentrum fur Energietechnologie E V 26129
Priority to DE201010006314 priority Critical patent/DE102010006314A1/de
Priority to PCT/EP2011/000245 priority patent/WO2011091967A2/fr
Publication of DE102010006314A1 publication Critical patent/DE102010006314A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03687—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline AIVBIV alloys, e.g. uc-SiGe, uc-SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE201010006314 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle Ceased DE102010006314A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE201010006314 DE102010006314A1 (de) 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle
PCT/EP2011/000245 WO2011091967A2 (fr) 2010-01-29 2011-01-21 Cellule solaire photovoltaïque en couches minces multiples

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201010006314 DE102010006314A1 (de) 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle

Publications (1)

Publication Number Publication Date
DE102010006314A1 true DE102010006314A1 (de) 2011-08-04

Family

ID=44315967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201010006314 Ceased DE102010006314A1 (de) 2010-01-29 2010-01-29 Photovoltaische Mehrfach-Dünnschichtsolarzelle

Country Status (2)

Country Link
DE (1) DE102010006314A1 (fr)
WO (1) WO2011091967A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103625920A (zh) * 2013-11-22 2014-03-12 中国科学院深圳先进技术研究院 工件自动输送及组装生产系统及生产方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011115340A1 (de) * 2011-10-07 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul
AU2014280332B2 (en) 2013-06-13 2017-09-07 Basf Se Detector for optically detecting at least one object
AU2014280335B2 (en) 2013-06-13 2018-03-22 Basf Se Detector for optically detecting an orientation of at least one object
EP3167304A4 (fr) 2014-07-08 2018-02-21 Basf Se Détecteur pour déterminer une position d'au moins un objet
US11125880B2 (en) 2014-12-09 2021-09-21 Basf Se Optical detector
JP6841769B2 (ja) 2015-01-30 2021-03-10 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１個の物体を光学的に検出する検出器
WO2017012986A1 (fr) 2015-07-17 2017-01-26 Trinamix Gmbh Détecteur pour détecter optiquement au moins un objet
JP6755316B2 (ja) 2015-09-14 2020-09-16 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１つの物体の少なくとも１つの画像を記録するカメラ
US20190140129A1 (en) 2016-04-06 2019-05-09 Trinamix Gmbh Detector for an optical detection of at least one object
KR102492134B1 (ko) 2016-07-29 2023-01-27 트리나미엑스 게엠베하 광학 센서 및 광학적 검출용 검출기
KR102431355B1 (ko) 2016-10-25 2022-08-10 트리나미엑스 게엠베하 적어도 하나의 대상체의 광학적 검출을 위한 검출기
US10890491B2 (en) 2016-10-25 2021-01-12 Trinamix Gmbh Optical detector for an optical detection
JP6979068B2 (ja) 2016-11-17 2021-12-08 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 少なくとも１つの物体を光学的に検出するための検出器
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
WO2018115073A1 (fr) 2016-12-21 2018-06-28 Trinamix Gmbh Détecteur pour une détection optique
EP3612805A1 (fr) 2017-04-20 2020-02-26 trinamiX GmbH Détecteur optique
KR102568462B1 (ko) 2017-06-26 2023-08-21 트리나미엑스 게엠베하 적어도 하나의 대상체의 위치를 결정하는 검출기

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456762A (en) * 1992-12-28 1995-10-10 Canon Kabushiki Kaisha Photoelectric conversion elements
US20060249197A1 (en) * 2005-04-26 2006-11-09 Sanyo Electric Co., Ltd. Stacked photovoltaic apparatus
EP2017895A2 (fr) 2007-07-18 2009-01-21 SCHOTT Solar GmbH Cellule solaire multiple en silicium et son procédé de fabrication
WO2009110409A1 (fr) * 2008-03-07 2009-09-11 国立大学法人東北大学 Pile solaire

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009152265A (ja) * 2007-12-19 2009-07-09 Tohoku Univ 光電変換素子製造装置及び方法、並びに光電変換素子
US20090293954A1 (en) * 2008-05-30 2009-12-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric Conversion Device And Method For Manufacturing The Same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456762A (en) * 1992-12-28 1995-10-10 Canon Kabushiki Kaisha Photoelectric conversion elements
US20060249197A1 (en) * 2005-04-26 2006-11-09 Sanyo Electric Co., Ltd. Stacked photovoltaic apparatus
EP2017895A2 (fr) 2007-07-18 2009-01-21 SCHOTT Solar GmbH Cellule solaire multiple en silicium et son procédé de fabrication
WO2009110409A1 (fr) * 2008-03-07 2009-09-11 国立大学法人東北大学 Pile solaire

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Takuya Matsui, Haijun Jia, Hiroyuki Fujiwara and Michio Kondo; Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST); 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 Japan "MICROCRYSTALLINE Si1-xGex AS BOTTOM CELL ABSORBER IN DOUBLE JUNCTION SOLAR CELLS" 23rd European Photovoltaic Solar Energy Conference, 1-5 September 2008, Valencia, Spain pp. 2113-2116
Yamamoto, K. et al. Solar Energy 77, 939

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103625920A (zh) * 2013-11-22 2014-03-12 中国科学院深圳先进技术研究院 工件自动输送及组装生产系统及生产方法
CN103625920B (zh) * 2013-11-22 2016-06-22 中国科学院深圳先进技术研究院 工件自动输送及组装生产系统及生产方法

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Publication number Publication date
WO2011091967A2 (fr) 2011-08-04
WO2011091967A3 (fr) 2011-12-22

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