DE102009031109A1 - heat dissipation - Google Patents
heat dissipation Download PDFInfo
- Publication number
- DE102009031109A1 DE102009031109A1 DE102009031109A DE102009031109A DE102009031109A1 DE 102009031109 A1 DE102009031109 A1 DE 102009031109A1 DE 102009031109 A DE102009031109 A DE 102009031109A DE 102009031109 A DE102009031109 A DE 102009031109A DE 102009031109 A1 DE102009031109 A1 DE 102009031109A1
- Authority
- DE
- Germany
- Prior art keywords
- heat dissipation
- dissipation device
- electrically insulating
- insulating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 82
- 239000004020 conductor Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Es ist eine Wärmeabführeinrichtung für ein elektronisches Bauteil (3) angegeben, die Folgendes aufweist: eine Wärmeabführplatte (4) aus Metall mit ersten und zweiten Bereichen (41, 42), die einander nicht überlappen, wobei der erste Bereich (41) so ausgebildet ist, dass er das elektronische Bauteil hält; eine erste elektrisch isolierende Schicht (5), die direkt auf der Oberseite des zweiten Bereichs (42) liegt; und eine Leiterschicht (6) mit einem ersten und einem zweiten Anschlussleiter (61, 62), die dazu ausgebildet sind, elektrisch mit dem elektronischen Bauteil verbunden zu werden, wobei der erste Anschlussleiter direkt auf der ersten elektrisch isolierenden Schicht ausgebildet ist und der zweite Anschlussleiter direkt auf der ersten elektrisch isolierenden Schicht oder dem ersten Bereich ausgebildet ist.There is provided a heat dissipation device for an electronic component (3), comprising: a metal heat dissipation plate (4) having first and second regions (41, 42) which do not overlap each other, the first region (41) being formed in that it holds the electronic component; a first electrically insulating layer (5) lying directly on top of the second region (42); and a conductor layer (6) having first and second terminal conductors (61, 62) adapted to be electrically connected to the electronic component, wherein the first terminal conductor is formed directly on the first electrically insulating layer and the second terminal conductor is formed directly on the first electrically insulating layer or the first region.
Description
Die Erfindung betrifft eine Wärmeabführeinrichtung, genauer gesagt eine Wärmeabführeinrichtung für ein elektronisches Bauteil.The Invention relates to a heat dissipation device, more precisely, a heat dissipation device for an electronic component.
Eine herkömmliche Wärmeabführeinrichtung ist dazu ausgebildet, eine LED (Leuchtdiode) mit hoher Leistung zu halten, und sie verfügt über eine Wärmeabführplatte aus Metall, eine mit der LED elektrisch verbundene PCB (gedruckte Leiterplatte), die auf der Wärmeabführplatte angeordnet ist, und eine Harzschicht, die die PCB mit der Wärmeabführplatte verbindet.A conventional heat dissipation device is designed to hold a LED (light emitting diode) with high power, and it has a heat dissipation plate made of metal, a PCB electrically connected to the LED (printed Printed circuit board), which are arranged on the heat dissipation plate and a resin layer connecting the PCB to the heat dissipation plate.
Der Energieverbrauch einer LED ist sehr niedrig. Jedoch erzeugt eine LED im Gebrauch Wärme, und diese Wärme beeinflusst die Lichtemissionseffizienz und die Lebensdauer der LED. Die durch die LED erzeugte Wärme kann nur über einen elektrisch leitenden Abschnitt, nämlich die PCB und die Harzschicht, an die Wärmeabführplatte übertragen werden, die die Wärme gut abführen kann. Im Ergebnis kann wegen des großen thermischen Widerstands nur eine kleine Wärmemenge von der LED an die Wärmeabführplatte übertragen werden, wodurch es nicht auf effiziente Weise gelingt, den Einfluss der Wärme auf die LED zu verringern.Of the Energy consumption of an LED is very low. However, one generates LED in use heat, and this heat affects the light emission efficiency and the life of the LED. By The LED generated heat can only be via an electrically conductive Section, namely the PCB and the resin layer to the Heat transfer plate are transferred, which can dissipate the heat well. As a result, can because of the large thermal resistance only a small one Transfer heat from the LED to the heat dissipation plate which does not efficiently manage the influence to reduce the heat on the LED.
Das
Jedoch sorgt der für elektrische Isolationsräume verwendete Keramikfilm für einen Abstand der LED von der Wärmeabführplatte. Wenn der Keramikfilm eine Dicke von 70 μm aufweist, beträgt seine Wärmeleitfähigkeit nur ungefähr 10 W/m·K. Demgemäß kann der Keramikfilm die Wärmeübertragungsrate an die Wärmeabführplatte herabsetzen. Ferner ist die Herstellung des Keramikfilms teuer und nicht wirtschaftlich.however provides the used for electrical insulation rooms Ceramic film for a distance of the LED from the heat dissipation plate. When the ceramic film has a thickness of 70 μm, it is its thermal conductivity only about 10 W / m · K. Accordingly, the ceramic film the heat transfer rate to the heat dissipation plate decrease. Furthermore, the production of the ceramic film is expensive and not economical.
Der Erfindung liegt die Aufgabe zugrunde, eine Wärmeabführeinrichtung zu schaffen, die günstig herstellbar ist und Wärme gut von einem elektronischen Bauteil abführen kann.Of the Invention is based on the object, a heat dissipation device to create, which is inexpensive to produce and heat can dissipate well from an electronic component.
Diese Aufgabe ist durch die Wärmeabführeinrichtung gemäß dem beigefügten Anspruch 1 gelöst. Sie verfügt über eine Wärmeabführplatte aus Metall, eine erste elektrisch isolierende Schicht sowie eine Leiterschicht als wesentliche Strukturelemente.These Task is by the heat dissipation device according to the attached claim 1. She has a heat dissipation plate made of metal, a first electrically insulating layer and a conductor layer as essential Structural elements.
Die Erfindung wird nachfolgend anhand von durch Fig. veranschaulichten Ausführungsformen näher erläutert.The Invention will be illustrated below with reference to FIG Embodiments explained in more detail.
Es sei darauf hingewiesen, dass in allen Zeichnungen gleiche Elemente mit den gleichen Bezugszahlen gekennzeichnet sind.It It should be noted that in all drawings the same elements are marked with the same reference numbers.
Gemäß den
Die
Wärmeabführplatte
Die
erste elektrisch isolierende Schicht
Die
Leiterschicht
Die
Leiterschicht
Die
Wärmeabführeinrichtung verfügt ferner über
eine Kopplungsschicht
Die
erste elektrisch isolierende Schicht
Da
das elektronische Bauteil
Wärmeabführeinrichtungen gemäß der Erfindung zeigen eine Wärmeabführeffizienz, die über der herkömmlicher Wärmeabführeinrichtungen mit derselben Fläche und derselben Leistung von LEDs liegt, da bei einer Wärmeabführeinrichtung gemäß der Erfindung die Wärmeabführplatte vorhanden ist. Daher kann die Größe einer Wärmeabführeinrichtung gemäß der Erfindung kleiner als diejenige einer Wärmeabführeinrichtung gemäß dem Stand der Technik sein, wenn dieselbe Wärmeabführleistung erzielt werden soll. Beispielsweise kann die Größe eines Solarchips (eines elektronischen Bauteils) verkleinert werden, wenn er mit einer Wärmeabführeinrichtung gemäß der Erfindung versehen ist, wobei immer noch für eine hohe Lichtsammelfähigkeit und eine hohe Stromerzeugungseffizienz gesorgt ist.Heat removal according to the invention, a heat dissipation efficiency, that over the conventional heat dissipation devices with the same area and power of LEDs, since in a heat dissipation device according to the Invention, the heat dissipation plate is present. Therefore can be the size of a heat dissipation device smaller than that of a heat dissipation device according to the invention according to the prior art, if the same Heat dissipation performance is to be achieved. For example can the size of a solar chip (an electronic Component) are reduced when he with a heat dissipation device is provided according to the invention, always still for a high light collecting ability and a high power generation efficiency is ensured.
Die
in der
Der
TEG
Wenn
die Wärme vom elektronischen Bauteil
Gemäß den
Die
Leiterschicht
Das
Kopplungselement
Da
das elektronische Bauteil
Gemäß den
Jeder
erste Bereich
Die
ersten und zweiten Anschlussleiter
Jedes
der Verbindungselemente
Demgemäß sperrt
die erste elektrisch isolierende Schicht
Gemäß der
Die
Ringwand
ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- - TW 345346 [0004] - TW 345346 [0004]
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/325,661 | 2008-12-01 | ||
US12/325,661 US8071998B2 (en) | 2007-12-24 | 2008-12-01 | Light emitting assembly |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102009031109A1 true DE102009031109A1 (en) | 2010-08-05 |
Family
ID=42313057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102009031109A Ceased DE102009031109A1 (en) | 2008-12-01 | 2009-06-30 | heat dissipation |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP2010130001A (en) |
DE (1) | DE102009031109A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017020958A1 (en) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Electronic device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5912471B2 (en) * | 2011-12-08 | 2016-04-27 | シチズンホールディングス株式会社 | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW345346U (en) | 1997-12-09 | 1998-11-11 | Sunonwealth Electr Mach Ind Co | Improved structure for radiator fan motor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54389B2 (en) * | 1975-05-06 | 1979-01-10 | ||
JPH05243254A (en) * | 1992-02-28 | 1993-09-21 | Nec Corp | Semiconductor device |
JP2001332773A (en) * | 2000-05-19 | 2001-11-30 | Yamaha Corp | Multi-layer substrate for thermoelectric module and method of manufacturing the same, and thermoelectric module using multi-layer substrate |
US6787999B2 (en) * | 2002-10-03 | 2004-09-07 | Gelcore, Llc | LED-based modular lamp |
JP2004296989A (en) * | 2003-03-28 | 2004-10-21 | Tanaka Kikinzoku Kogyo Kk | Substrate for light emitting diode device |
JP4123105B2 (en) * | 2003-05-26 | 2008-07-23 | 松下電工株式会社 | Light emitting device |
JP2005032834A (en) * | 2003-07-08 | 2005-02-03 | Toshiba Corp | Joining method of semiconductor chip and substrate |
US20050077616A1 (en) * | 2003-10-09 | 2005-04-14 | Ng Kee Yean | High power light emitting diode device |
JP4127220B2 (en) * | 2004-02-24 | 2008-07-30 | 松下電工株式会社 | Printed circuit board for LED mounting and manufacturing method thereof |
JP4256282B2 (en) * | 2004-02-25 | 2009-04-22 | 日本特殊陶業株式会社 | Heat sink material manufacturing method and heat sink ceramic package |
JP2006165114A (en) * | 2004-12-03 | 2006-06-22 | Nec Corp | Method for mounting semiconductor device, mounting structure and apparatus |
KR100629521B1 (en) * | 2005-07-29 | 2006-09-28 | 삼성전자주식회사 | Led package structure and manufacturing method, and led array module |
JP2007048638A (en) * | 2005-08-10 | 2007-02-22 | Pearl Denkyu Seisakusho:Kk | Lighting fixture |
JP2008198928A (en) * | 2007-02-15 | 2008-08-28 | Sony Corp | Cooling structure and electronic apparatus in which its structure is built-in |
US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
-
2009
- 2009-06-16 JP JP2009142876A patent/JP2010130001A/en active Pending
- 2009-06-30 DE DE102009031109A patent/DE102009031109A1/en not_active Ceased
-
2011
- 2011-12-09 JP JP2011269739A patent/JP2012089869A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW345346U (en) | 1997-12-09 | 1998-11-11 | Sunonwealth Electr Mach Ind Co | Improved structure for radiator fan motor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017020958A1 (en) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Electronic device |
US10483446B2 (en) | 2015-08-06 | 2019-11-19 | Osram Opto Semiconductors Gmbh | Electronic device |
Also Published As
Publication number | Publication date |
---|---|
JP2012089869A (en) | 2012-05-10 |
JP2010130001A (en) | 2010-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |
Effective date: 20111208 |