DE102006057182A1 - Multi-sensorial line image sensor for use in multi-sensorial camera, has image lines attached on semiconductor component and covered with material in linear line arrangement, where signal of sensor is emitted as two-channel image signal - Google Patents
Multi-sensorial line image sensor for use in multi-sensorial camera, has image lines attached on semiconductor component and covered with material in linear line arrangement, where signal of sensor is emitted as two-channel image signal Download PDFInfo
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- DE102006057182A1 DE102006057182A1 DE200610057182 DE102006057182A DE102006057182A1 DE 102006057182 A1 DE102006057182 A1 DE 102006057182A1 DE 200610057182 DE200610057182 DE 200610057182 DE 102006057182 A DE102006057182 A DE 102006057182A DE 102006057182 A1 DE102006057182 A1 DE 102006057182A1
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- image sensor
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- 239000000463 material Substances 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000035945 sensitivity Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 230000003595 spectral effect Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000032798 delamination Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000012567 pattern recognition method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 210000002023 somite Anatomy 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
Die
industrielle Bildverarbeitung benötigt z.B. zur automatischen
visuellen Oberflächeninspektion oft
Bildsensoren, welche auf unterschiedliche physikalische Eigenschaften
der zu prüfenden
Oberfläche reagieren.
So prüft
die Firma MASSEN machine vision systems Gmb, Konstanz (
- 1. Farbbildsensoren zur Prüfung des ästhetischen Gesamteindrucks und zur Detektion von fremdfarbigen Kontaminationen
- 2. s/w Sensoren, welche die Oberfläche in spiegelnder Reflexion beobachten zur Detektion von Oberflächenfehler wie Risse, Beulen, Glanzfehler usw.
- 3. Ultraviolett-empfindliche Sensoren um Beschädigungen der transparente Melaminhaltigen Schutzschicht zu erkennen
- 1. Color image sensors for the examination of the overall aesthetic impression and for the detection of foreign colored contamination
- 2. s / w sensors, which observe the surface in specular reflection for the detection of surface defects such as cracks, dents, gloss defects, etc.
- 3. Ultraviolet-sensitive sensors to detect damage to the transparent melamine protective layer
Der Einsatz von unterschiedlichen Kameras mit diesen Bildsensoren bedeutet einen erheblichen Aufwand. Die Kalibrierung und Ausrichtung der unterschiedlichen Kameras mit jeweils einem eigenen optischen System ist kompliziert und aufwendig.Of the Use of different cameras with these image sensors means a considerable effort. The calibration and alignment of the different cameras, each with its own optical system is complicated and expensive.
Es besteht daher ein grosses technisches und wirtschaftliches Interesse daran, möglichst alle unterschiedlichen Sensoren in einem einzigen Bildsensor zu vereinigen, um mit lediglich einer sog. „multisensoriellen" Kamera solche Oberflächen prüfen zu können.It There is therefore a great deal of technical and economic interest as much as possible all different sensors in a single image sensor too unite in order to check such surfaces with just a so-called "multi-sensorial" camera.
Es
ist bekannt, Zeilenkamera-Bildsensoren mit mehreren spektral unterschiedlichen,
auf einem Chip integrierten Bildtzeilen herzustellen. So haben die
sog. trilinearen Zeilensensoren der Fa. Dalsa (
Die Fa. Kodak stellt einen vier-linearen Bildsensor her, welcher neben drei Farbzeilen noch eine s/w Zeile auf einem chip integriert.The Fa Kodak manufactures a four-linear image sensor, which beside three color lines still a s / w line integrated on a chip.
Die spektrale Empfindlichkeit dieser im folgenden „N-linear" genannten Zeilenbildsensoren ist durch die aufgebrachte Farbfilter sowie durch die natürliche Empfindlichkeitskennlinie des Halbleitermaterials, in der Regel Silizium, und der SI-Prozessverfahren festgelegt. Insbesondere bei preiswerten CMOS-Bildsensoren bedeutet dies, dass solche N-linearen Zeilen wenig empfindlich im ultravioletten Bereich mit Wellenlängen kleiner als ca. 390 nm und überhaupt nicht mehr empfindlich bei Wellenlängen grösser als ca. 1100 nm sind.The Spectral sensitivity of these in the following "N-linear" called line image sensors is through the applied color filters as well as the natural sensitivity characteristic of the semiconductor material, typically silicon, and the SI process method established. Especially for low-cost CMOS image sensors means this, that such N-linear lines are less sensitive in the ultraviolet Range with wavelengths less than about 390 nm and ever no longer sensitive at wavelengths greater than about 1100 nm.
Gerade in der Oberflächeninspektion sind diese Bereiche aber technisch interessant, da zahlreiche Fehler sich durch eine unterschiedliche Reflexion im Vergleich zum fehlerfreien Oberfläche in genau diesen Wellenlängen-Bereichen ausdrücken.Just in the surface inspection However, these areas are technically interesting, as numerous errors through a different reflection compared to the error-free surface in just those wavelength ranges express.
Erfindungsgemäß wird die Aufgabe, einen kostengünstigen multisensoriellen N-linearen Zeilenbildsensor zu realisieren dadurch erreicht, dass zur Erzielung einer spektralen Empfindlichkeit, welche über den Bereich der spektralen Empfindlichkeit des verarbeiteten Halbleitermaterials des Bildsensors hinausreicht, zumindestens eine Bildzeile aus der N-linearen Zeilenanordnung mit einem Material abgedeckt ist, welches die optische Strahlung eines Wellenlängenbereiches, für den das Bildsensor-Halbleitermaterial nicht empfindlich ist, umwandelt in einen Wellenlängenbereich, welcher im Empfindlichkeitsbereich des Bildsensor-Halbleitermaterials liegt und dass die Signale des N-linearen Zeilenbildsensors als ein N-kanaliges Bildsignal ausgegeben werden.According to the invention Task, a cost-effective realize multi-sensorial N-linear line image sensor thereby achieved that to achieve a spectral sensitivity, which over the Range of spectral sensitivity of the processed semiconductor material the image sensor extends, at least one image line from the N-linear line arrangement covered with a material containing the optical radiation a wavelength range, for the the image sensor semiconductor material is not sensitive, converts in a wavelength range, which in the sensitivity range of the image sensor semiconductor material and that the signals of the N-linear line image sensor as an N-channel image signal is output.
Solche Materialien zur Umwandlung von Wellenlängenbereichen sind dem Fachmann der Optik unter den Begriffen „fluoreszierende" oder „szintillierende" Materialien bekannt.Such Materials for the conversion of wavelength ranges are those skilled in the art optics known under the terms "fluorescent" or "scintillating" materials.
Wir verdeutlichen den Erfindungsgedanken beispielhaft, aber nicht einschränkend, anhand eines 6-linearen Zeilensensors für die Oberflächeninspektion von Fussbodenlaminaten. Die sechs Bildzeilen des 6-linearen Zeilensensor decken folgende Wellenlängenbereiche ab:
- 1. den ultravioletten Bereich anhand eines fluoreszierenden Materials, welcher die erste Bildzeile abdeckt und somit die UV-Wellenlängenbereiche, für die das Silizium Halbleitermaterial nicht mehr empfindlich ist umwandelt in Licht, welches innerhalb des Wellenlängenbereiches liegt, für welches Silizium noch empfindlich ist. Solche Fluoreszenzmaterialien sind dem Physiker bekannt und werden z.B. als Aufheller bei der Papierherstellung eingesetzt. Diese Bildzeile werde mit „A" bezeichnet.
- 2. drei Bildzeilen, welche mit Farbfilter ROT, GRÜN und BLAU abgedeckt sind und damit ein dreikanaliges RGB-Bildbildsignal erzeugen. Diese Bildzeilen werden mit „B", "C" und „D" bezeichnet.
- 3. eine Bildzeile, welche ohne Abdeckung für den Bereich von ca. 400 nm bis 1000 nm entsprechend der natürlichen Empfindlichkeit des Silizium, empfindlich ist wobei durch ein Bandpassfilter nur der Wellenlängenbereich von 750 bis 900 nm durchgelassen wird. Diese Bildzeile werde mit „E" bezeichnet
- 4. einer Bildzeile, welche mit einem Material abgedeckt ist,
welches IR-Strahlung in sichtbares Licht umwandelt. Solche Materialien
sind dem Physiker bekannt. Sie werden beispielsweise eingesetzt, um
das unsichtbare IR-Licht von Laser für das menschliche Auge sichtbar
zu machen. Aus
www.redshift.com
- 1. The ultraviolet range based on a fluorescent material covering the first image line and thus converting the UV wavelength ranges for which the silicon semiconductor material is no longer sensitive to light which is within the wavelength range for which silicon is still sensitive. Such fluorescent materials are known to the physicist and are used, for example, as a brightener in papermaking. This image line will be labeled "A".
- 2. three image lines, which are covered with color filter RED, GREEN and BLUE and thus generate a three-channel RGB image signal. These image lines are labeled "B", "C" and "D".
- 3. an image line, which is sensitive without coverage for the range of about 400 nm to 1000 nm corresponding to the natural sensitivity of the silicon, wherein only a wavelength range of 750 to 900 nm is transmitted through a bandpass filter. This picture line will be labeled "E"
- 4. a picture line, which abge with a material is covered, which converts IR radiation into visible light. Such materials are known to the physicist. They are used, for example, to make the invisible IR light of lasers visible to the human eye. Out
www.redshift.com
Damit kann dieser 6-lineare Zeilensensor in der beispielhaften Anordnung einer Oberflächeninspektion von Melamin-laminierten Spanplatten folgende Defekte im Sinne einer multisensoriellen Sensorik gleichzeitig erfassen:
- 1. Trübungen innerhalb der transparenten Schutzschicht anhand der zu kurzen Wellenlängen im UV-Bereich stark ansteigenden Rückstreuung mit der Bildzeile „A"
- 2. den visuellen Farbeindruck sowie das Vorhandensein von fremdfarbigen Kontaminationen anhand das Farbbildes der Bildzeilen „B", "C" und „D", welche jeweils eine Farbkomponente des RGB-Zeilenbildes darstellen
- 3. Oberflächendefekte werden dadurch mit der Bildzeile „E" erkannt, dass die Oberfläche unter einem Einfallswinkel mit Licht im Wellenlängenbereich von 750 nm bis 900 nm so belichtet wird, dass es in direkter Reflexion von dem 6-linearen Bildsensor erfasst wird.
- 4. Delaminationen werden durch Wärmeflussthermographie erkannt, indem die zu prüfende Oberfläche kurz bevor sie in das Bildfeld des 6-linearen Bildsensors eintritt, mit einem IR Strahler aufgeheizt wird und die erhöhte IR Remission aufgrund der geringeren Wärmeableitung an einer Stelle der Oberfläche, welche über einer Delamination liegt, erkannt wird. Diese Erscheinung kann bereits bei Wellenlängen von ca. 1700 nm beobachtet werden, d.h. bei Wellenlängen, bei denen übliche preiswerte Glasoptiken noch arbeiten
- 1. turbidity within the transparent protective layer on the basis of the too short wavelengths in the UV range strongly increasing backscatter with the image line "A"
- 2. the visual color impression as well as the presence of foreign-colored contaminations on the basis of the color image of the image lines "B", "C" and "D", which each represent a color component of the RGB line image
- 3. Surface defects are thereby identified with the image line "E" that the surface is exposed at an angle of incidence with light in the wavelength range of 750 nm to 900 nm so that it is detected in direct reflection from the 6-linear image sensor.
- 4. Delamination is detected by heat flow thermography by heating the surface to be tested with an IR emitter shortly before it enters the field of view of the 6-linear image sensor and the increased IR remission due to the lower heat dissipation at a location of the surface which exceeds one Delamination is detected. This phenomenon can already be observed at wavelengths of about 1700 nm, ie at wavelengths at which conventional inexpensive glass optics are still working
Der Einsatz des beispielhaften N-kanaligen Zeilenbildsensor ist technisch einfach, weil dieser 6-lineare Zeilensensors mit einer einzigen Optik auskommt. Wird der 6-lineare Zeilensensor, wie dem Fachmann der Bildverarbeitung bekannt, über einen Drehgeber extern synchron zur Geschwindigkeit der zu prüfenden Oberfläche getaktet, so können die 6 Bildsignale durch entsprechende Verzögerungen zu einem 6-kanaligen vektoriellen Bildsignal zusammengefasst werden, bei welchem jeder Bildpunkt der Laminat-Oberfläche durch 6 optische Merkmale beschrieben wird.Of the Use of the exemplary N-channel line image sensor is technical simply because of this 6-linear line sensor with a single Optics comes off. Will the 6-linear line sensor, as the expert the image processing known a shaft encoder externally clocked in sync with the speed of the surface to be tested, so can the 6 image signals by corresponding delays to a 6-channel vector image signal are summarized, in which each Pixel of the laminate surface is described by 6 optical features.
Damit können durch Mustererkennungsverfahren, welche diesen 6-dimensionalen Messwertsvektor auswerten, auch schwierigste Fehler anhand dieses multisensoriellen Bildsignals bei geringen Kosten und geringem technischen Aufwand detektiert werden.In order to can by pattern recognition methods which use this 6-dimensional measured value vector evaluate, even the most difficult errors based on this multi-sensorial Image signal at low cost and low technical effort be detected.
Claims (6)
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DE200610057182 DE102006057182A1 (en) | 2006-12-03 | 2006-12-03 | Multi-sensorial line image sensor for use in multi-sensorial camera, has image lines attached on semiconductor component and covered with material in linear line arrangement, where signal of sensor is emitted as two-channel image signal |
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DE200610057182 DE102006057182A1 (en) | 2006-12-03 | 2006-12-03 | Multi-sensorial line image sensor for use in multi-sensorial camera, has image lines attached on semiconductor component and covered with material in linear line arrangement, where signal of sensor is emitted as two-channel image signal |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7012260B2 (en) * | 2003-12-05 | 2006-03-14 | Canon Kabushiki Kaisha | Radiation image pick-up device and radiation image pick-up method |
DE69831480T2 (en) * | 1997-01-21 | 2006-06-14 | Thales Electron Devises S A | METHOD OF MANUFACTURING A RADIATION DETECTOR FROM COMPOUND SINGLE ELEMENTS |
US7109492B2 (en) * | 2002-11-22 | 2006-09-19 | Canon Kabushiki Kaisha | Radiographic apparatus |
-
2006
- 2006-12-03 DE DE200610057182 patent/DE102006057182A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69831480T2 (en) * | 1997-01-21 | 2006-06-14 | Thales Electron Devises S A | METHOD OF MANUFACTURING A RADIATION DETECTOR FROM COMPOUND SINGLE ELEMENTS |
US7109492B2 (en) * | 2002-11-22 | 2006-09-19 | Canon Kabushiki Kaisha | Radiographic apparatus |
US7012260B2 (en) * | 2003-12-05 | 2006-03-14 | Canon Kabushiki Kaisha | Radiation image pick-up device and radiation image pick-up method |
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Effective date: 20130702 |