DE102006031844B4 - Method for mounting electronic components on a carrier by pressure sintering and thus produced circuit arrangement - Google Patents
Method for mounting electronic components on a carrier by pressure sintering and thus produced circuit arrangement Download PDFInfo
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- DE102006031844B4 DE102006031844B4 DE200610031844 DE102006031844A DE102006031844B4 DE 102006031844 B4 DE102006031844 B4 DE 102006031844B4 DE 200610031844 DE200610031844 DE 200610031844 DE 102006031844 A DE102006031844 A DE 102006031844A DE 102006031844 B4 DE102006031844 B4 DE 102006031844B4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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Abstract
Verfahren zur Befestigung von elektronischen Bauelementen (3) auf einem Träger durch Drucksinterung, durch: – Beschichten mindestens einer Folie (1) als Träger mit mindestens einem elektrischen Kontakt mit einer Edelmetalllegierung (2); – Aufbringen einer metallhaltigen Kontaktschicht (4) auf Kontaktoberflächen des mindestens einen zu befestigenden elektronischen Bauelementes (3), und – Positionieren des mindestens einen elektrischen Bauelementes (3) auf der mindestens einen Folie (1) so, dass die mindestens eine Kontaktoberfläche des Bauelements auf der Edelmetalllegierung (2) der mindestens einen Folie (1) aufliegt, gekennzeichnet durch – Bilden einer Drucksinterverbindung durch Beaufschlagen der Anordnung aus mindestens einer Folie (1) und mindestens einem elektronischen Bauelement (3) mit Druck und Temperatur bis zu 250°C.Method for fastening electronic components (3) to a carrier by pressure sintering, by: - coating at least one film (1) as a carrier with at least one electrical contact with a noble metal alloy (2); - Applying a metal-containing contact layer (4) on contact surfaces of the at least one electronic component to be fastened (3), and - Positioning the at least one electrical component (3) on the at least one film (1) so that the at least one contact surface of the device the noble metal alloy (2) of the at least one film (1), characterized by - forming a pressure sintered compound by applying the arrangement of at least one film (1) and at least one electronic component (3) with pressure and temperature up to 250 ° C.
Description
Die Erfindung betrifft ein Verfahren zur Befestigung von elektronischen Bauelementen auf einem Träger durch Drucksinterung gemäß Oberbegriff des Anspruchs 1, wie er aus
Die Erfindung betrifft weiterhin eine Schaltungsanordnung gemäß dem Anspruch 8 hergestellt nach dem Verfahren gemäß Anspruch 1.The invention further relates to a circuit arrangement according to claim 8 produced by the method according to
Die Drucksinterverbindung elektronischer Bauelemente auf einem Substrat sind noch aus der
In der
Zur Reduzierung der durch den Trockenvorgang und des Ausgasens relativ langen Prozesszeit wird in der
Die
Die
Es seien noch
Ausgehend hiervon ist es Aufgabe der vorliegenden Erfindung, ein verbessertes Verfahren zur Befestigung von elektronischen Bauelementen auf einem folienhaften Träger durch Drucksinterung zu schaffen und eine somit hergestellte Schaltungsanordnung zu schaffen.Based on this, it is an object of the present invention to provide an improved method for mounting electronic components on a foil-like carrier by pressure sintering and to provide a circuit arrangement thus produced.
Die Aufgabe wird mit dem Verfahren der eingangs genannten Art gelöst durch Bilden einer Drucksinterverbindung durch Beaufschlagen der Anordnung aus mindestens einer Folie und mindestens einem elektronischen Bauelement mit Druck und Temperatur bis höchstens 250°C, wobei eine Schaltunganordnung mit einer verbesserten Verbindung der Bauelemente auf einem folienartigen Träger entsteht.The object is achieved by the method of the type mentioned by forming a pressure sintered connection by applying the arrangement of at least one film and at least one electronic component with pressure and temperature up to 250 ° C, wherein a circuit arrangement with an improved connection of the components on a foil-like Carrier arises.
Es hat sich überraschend gezeigt, dass die Nutzung einer Folie als Trägersubstrat für den Drucksinterprozess geeignet ist, ohne dass diese sich durch die Druckbeaufschlagung und den Hitzeeinfluss verformt. Dabei kann ein Drucksinterverbund mit erheblicher Haftkraft zwischen Folie, Sinterverbundschicht und elektronischem Bauelement geschaffen werden. Dies wird dadurch erreicht, dass die Folie mit einer Edelmetalllegierung beschichtet wird. Eine solche edelmetallbeschichtete Folie hält den Einflüssen der Drucksinterung stand und gewährleistet einen hochwertigen Sinterverbund mit einer metallhaltigen Kontaktschicht auf Kontaktoberflächen der elektronischen Bauelemente.It has surprisingly been found that the use of a film as a carrier substrate for the pressure sintering process is suitable without being deformed by the pressurization and the influence of heat. In this case, a pressure sintering composite can be created with considerable adhesion between film, sintered composite layer and electronic component. This is achieved by coating the film with a noble metal alloy. Such a noble metal-coated film withstands the effects of pressure sintering and ensures a high-quality sintered composite with a metal-containing contact layer on contact surfaces of the electronic components.
Die Nutzung einer Folie und die elektrische Kontaktierung mit der Folie und der elektronischen Bauelemente mittels Drucksinterverfahren hat den Vorteil, dass eine flexible Schaltungsanordnung geschaffen wird, die einfach und preiswert herstellbar ist.The use of a film and the electrical contact with the film and the electronic components by means of pressure sintering method has the advantage that a flexible circuit arrangement is provided which is simple and inexpensive to produce.
Die Folie wird vorzugsweise mit einer Titan-Platin-Gold-Legierung beschichtet. Hierdurch werden eine gute Haftung des Drucksinterverbunds an der Folie und ein guter Drucksinterverbund mit der metallhaltigen Kontaktschicht auf den Kontaktoberflächen des elektronischen Bauelementes gewährleistet.The film is preferably coated with a titanium-platinum-gold alloy. As a result, good adhesion of the pressure sintering composite to the film and a good pressure sintering bond with the metal-containing contact layer on the contact surfaces of the electronic component are ensured.
Die metallhaltige Kontaktschicht auf den Kontaktoberflächen der elektronischen Bauelemente besteht vorzugsweise aus einer silberhaltigen Legierung oder aus Silber.The metal-containing contact layer on the contact surfaces of the electronic components is preferably made of a silver-containing alloy or of silver.
Besonders vorteilhaft ist es, wenn eine weitere Folie mit einer Edelmetalllegierung beschichtet wird und eine erste Folie angrenzend an Kontaktoberflächen auf der Unterseite des mindestens einen elektronischen Bauelements und eine zweite Folie angrenzend an Kontaktoberflächen auf der Oberseite des mindestens eine elektronischen Bauelements positioniert wird und dieser Verbund aus zwei Folien mit zwischen liegenden elektronischen Bauelementen zur Drucksinterung druck- und temperaturbeaufschlagt wird. It is particularly advantageous if a further film is coated with a noble metal alloy and a first film adjacent to contact surfaces on the underside of the at least one electronic component and a second film adjacent to contact surfaces on the top of the at least one electronic component is positioned and this composite two films with intermediate electronic components for pressure sintering pressure and temperaturbeaufschlagt.
Eine der Folien kann dabei als Träger und die andere Folie als Ersatz von Bond-Verbindungen zur Kontaktierung mehrerer elektronischer Bauelemente untereinander genutzt werden.One of the films can be used as a carrier and the other film as a substitute for bonding connections for contacting a plurality of electronic components with each other.
Vorteilhaft ist es auch, wenn die Edelmetalllegierung strukturiert auf mindestens eine der Folien aufgebracht wird. Entsprechend kann auch die metallhaltige Kontaktschicht strukturiert auf das elektronische Bauelement aufgetragen werden. Damit wird erreicht, dass elektrische Verbindungen an ausgewählten Kontaktstellen im Drucksinterverfahren hergestellt werden.It is also advantageous if the noble metal alloy is applied in a structured manner to at least one of the films. Accordingly, the metal-containing contact layer can be applied structured on the electronic component. This ensures that electrical connections are made at selected contact points in the pressure sintering process.
Die Folie hat vorzugsweise eine Dicke im Bereich von 20 bis 200 μm. Als für den Drucksinterprozess geeignete Folien haben sich Folien herausgestellt, die Polyimid enthalten. Insbesondere geeignet sind Folien, die an sich zur Verwendung in Flachbildschirmen vorgesehen sind. Derartige Folien werden beispielsweise unter der Handelsbezeichnung Apical® von der Firma Kaneka in Japan hergestellt. Besonders geeignet ist die Folie Polyimid Film Apical 100 NP mit einer Dicke von 25 μm, 200 NP mit einer Dicke von 50 μm, 300 NP mit der Dicke von 75 μm und 500 NP mit einer Dicke von 125 μm. Der Koeffizient der thermischen Expansion liegt im Bereich von 15 bis 16 ppm/dC. Das Zugmodul sollte größer als 3,4 sein und vorzugsweise im Bereich von 3,6 bis 4,4 liegen. Bevorzugt beträgt das Zugmodul 4,0 bis 4,2.The film preferably has a thickness in the range of 20 to 200 μm. As suitable for the printing sintering process films have been found that contain polyimide. Particularly suitable are films which are intended for use in flat screens. Such films are produced, for example, under the trade name Apical ® by the company Kaneka in Japan. Particularly suitable is the film polyimide film Apical 100 NP with a thickness of 25 microns, 200 NP with a thickness of 50 microns, 300 NP with the thickness of 75 microns and 500 NP with a thickness of 125 microns. The coefficient of thermal expansion is in the range of 15 to 16 ppm / dC. The tensile modulus should be greater than 3.4 and preferably in the range of 3.6 to 4.4. The tensile modulus is preferably 4.0 to 4.2.
Mögliche weitere geeignete Folien sind die 3M Oberflächenschutzfolie 76911 „Ultra Clear” mit einer Dicke von 0,05 mm der Firma 3M Deutschland, Neuss oder die PFA Folie transparent Typ 100 lp mit einer Dicke von 0,0127 mm der Firma Angst und Pfister, Mörfelden.Possible further suitable films are the 3M surface protection film 76911 "Ultra Clear" with a thickness of 0.05 mm from 3M Germany, Neuss or the PFA film transparent type 100 lp with a thickness of 0.0127 mm from Angst und Pfister, Mörfelden ,
Die Zugfestigkeit sollte mindestens 260 MPa betragen und im Bereich von 360 bis 330 MPa liegen.The tensile strength should be at least 260 MPa and should be in the range of 360 to 330 MPa.
Die Aufgabe wird weiterhin durch die Schaltungsanordnung gemäß Anspruch 8 gelöst.The object is further achieved by the circuit arrangement according to claim 8.
Vorteilhafte Ausführungsformen sind in den Unteransprüchen beschrieben.Advantageous embodiments are described in the subclaims.
Die Erfindung wird nachfolgend anhand eines Ausführungsbeispiels mit der beigefügten Zeichnung näher erläutert. Es zeigt:The invention will be explained in more detail with reference to an embodiment with the accompanying drawings. It shows:
Die
In einem ersten Schritt a) wird die Folie
In einem zweiten Schritt b) wird eine metallhaltige Kontaktschicht
In einem dritten Schritt c) wird dann das mindestens eine elektronische Bauelement
In einem letzten Schritt d) wird die Anordnung aus elektronischem Bauelement
Hierdurch wird ein Sinterverbund zwischen metallhaltiger Kontaktschicht
Bei der Drucksinterung löst sich im Unterschied zur Übertragung einer metallhaltigen pastösen Kontaktschicht
Da die Folie
In einer Weiterbildung des Verfahrens ist es auch möglich, die Oberseite der elektronischen Bauelemente
Der Drucksinterverbund zwischen Folie
Insgesamt ergibt sich für die Schaltungsanordnung eine hohe Zuverlässigkeit und Lebensdauer.Overall, the circuit arrangement has a high reliability and service life.
Claims (14)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE200610031844 DE102006031844B4 (en) | 2006-07-07 | 2006-07-07 | Method for mounting electronic components on a carrier by pressure sintering and thus produced circuit arrangement |
EP07785597A EP2038921A1 (en) | 2006-07-07 | 2007-07-06 | Method for attaching electronic components to a support by means of pressure sintering and circuit arrangement |
PCT/DE2007/001199 WO2008003308A1 (en) | 2006-07-07 | 2007-07-06 | Method for attaching electronic components to a support by means of pressure sintering and circuit arrangement |
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DE200610031844 DE102006031844B4 (en) | 2006-07-07 | 2006-07-07 | Method for mounting electronic components on a carrier by pressure sintering and thus produced circuit arrangement |
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DE102006031844A1 DE102006031844A1 (en) | 2008-01-10 |
DE102006031844B4 true DE102006031844B4 (en) | 2013-04-11 |
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DE200610031844 Expired - Fee Related DE102006031844B4 (en) | 2006-07-07 | 2006-07-07 | Method for mounting electronic components on a carrier by pressure sintering and thus produced circuit arrangement |
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EP (1) | EP2038921A1 (en) |
DE (1) | DE102006031844B4 (en) |
WO (1) | WO2008003308A1 (en) |
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DE102009018541A1 (en) * | 2009-04-24 | 2010-10-28 | W.C. Heraeus Gmbh | Contacting unit for electronic component, is porous metallic layered structure, and contact surface of electronic component and layered structure geometrically fit to each other, where thickness of layer is ten micrometers |
Citations (7)
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US4084985A (en) * | 1977-04-25 | 1978-04-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for producing solar energy panels by automation |
DE3414065C2 (en) * | 1984-04-13 | 1989-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | |
EP0242626B1 (en) * | 1986-04-22 | 1991-06-12 | Siemens Aktiengesellschaft | Method for mounting electronic components on a substrate |
US5169804A (en) * | 1990-09-06 | 1992-12-08 | Siemens Aktiengesellschaft | Method for fastening a semiconductor, body provided with at least one semiconductor component to a substrate |
US6248948B1 (en) * | 1998-05-15 | 2001-06-19 | Canon Kabushiki Kaisha | Solar cell module and method of producing the same |
DE10113769A1 (en) * | 2001-03-21 | 2002-10-02 | Infineon Technologies Ag | Semiconductor chip used in control modules or storage modules comprises an elastic film laminated on a main side |
DE102004019567B3 (en) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Securing electronic components to substrate by subjecting the electronic component, supporting film and paste-like layer to pressure and connecting the substrate and the component by sintering |
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JP2816028B2 (en) | 1991-02-18 | 1998-10-27 | 株式会社東芝 | Method for manufacturing semiconductor device |
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2006
- 2006-07-07 DE DE200610031844 patent/DE102006031844B4/en not_active Expired - Fee Related
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2007
- 2007-07-06 EP EP07785597A patent/EP2038921A1/en not_active Withdrawn
- 2007-07-06 WO PCT/DE2007/001199 patent/WO2008003308A1/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
DE102006031844A1 (en) | 2008-01-10 |
WO2008003308A1 (en) | 2008-01-10 |
EP2038921A1 (en) | 2009-03-25 |
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