DE102006025374A1 - Gate-Ansteuerungs-Einrichtung, Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors - Google Patents
Gate-Ansteuerungs-Einrichtung, Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors Download PDFInfo
- Publication number
- DE102006025374A1 DE102006025374A1 DE102006025374A DE102006025374A DE102006025374A1 DE 102006025374 A1 DE102006025374 A1 DE 102006025374A1 DE 102006025374 A DE102006025374 A DE 102006025374A DE 102006025374 A DE102006025374 A DE 102006025374A DE 102006025374 A1 DE102006025374 A1 DE 102006025374A1
- Authority
- DE
- Germany
- Prior art keywords
- effect transistor
- field effect
- junction field
- gate
- electrical connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000015556 catabolic process Effects 0.000 claims abstract description 25
- 230000000903 blocking effect Effects 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 230000002441 reversible effect Effects 0.000 description 8
- 230000003068 static effect Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 7
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Junction Field-Effect Transistors (AREA)
- Power Conversion In General (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006025374A DE102006025374B4 (de) | 2006-05-31 | 2006-05-31 | Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors |
| DE112007001781T DE112007001781A5 (de) | 2006-05-31 | 2007-05-31 | Schaltungsanordnung und Verfahren zur Gate- Ansteuerung eines Sperrschicht-Feldeffekttransistors |
| PCT/DE2007/000975 WO2007137569A1 (de) | 2006-05-31 | 2007-05-31 | Schaltungsanordnung und verfahren zur gate- ansteuerung eines sperrschicht-feldeffekttransistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006025374A DE102006025374B4 (de) | 2006-05-31 | 2006-05-31 | Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102006025374A1 true DE102006025374A1 (de) | 2007-12-13 |
| DE102006025374B4 DE102006025374B4 (de) | 2008-03-13 |
Family
ID=38616251
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006025374A Expired - Fee Related DE102006025374B4 (de) | 2006-05-31 | 2006-05-31 | Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors |
| DE112007001781T Withdrawn DE112007001781A5 (de) | 2006-05-31 | 2007-05-31 | Schaltungsanordnung und Verfahren zur Gate- Ansteuerung eines Sperrschicht-Feldeffekttransistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112007001781T Withdrawn DE112007001781A5 (de) | 2006-05-31 | 2007-05-31 | Schaltungsanordnung und Verfahren zur Gate- Ansteuerung eines Sperrschicht-Feldeffekttransistors |
Country Status (2)
| Country | Link |
|---|---|
| DE (2) | DE102006025374B4 (zh) |
| WO (1) | WO2007137569A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011086129A1 (de) * | 2010-11-10 | 2012-09-06 | Infineon Technologies Ag | Detektion des Leitungszustandes eines RC-IGBT |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8923577B2 (en) | 2006-09-28 | 2014-12-30 | General Electric Company | Method and system for identifying regions in an image |
| FR2911736B1 (fr) * | 2007-01-23 | 2009-03-20 | Schneider Toshiba Inverter | Dispositif de commande d'un interrupteur de puissance et variateur comprenant un tel dipositif. |
| US7915944B2 (en) * | 2009-04-27 | 2011-03-29 | General Electric Company | Gate drive circuitry for non-isolated gate semiconductor devices |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020190779A1 (en) * | 2000-12-21 | 2002-12-19 | Yusuke Aiba | High-speed current switch circuit |
| DE10143432C1 (de) * | 2001-09-05 | 2003-02-27 | Daimler Chrysler Ag | Treiberschaltung und Ansteuerverfahren für einen feldgesteuerten Leistungsschalter |
| DE10212869A1 (de) * | 2002-03-22 | 2003-09-18 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
| DE10212863A1 (de) * | 2002-03-22 | 2003-10-23 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE20109957U1 (de) * | 2001-06-15 | 2002-07-18 | Siemens AG, 80333 München | Schaltungsanordnung zum Steuern der einer Last zugeführten Leistung |
| US6741099B1 (en) * | 2003-01-31 | 2004-05-25 | Power-One Limited | Transistor driver circuit |
-
2006
- 2006-05-31 DE DE102006025374A patent/DE102006025374B4/de not_active Expired - Fee Related
-
2007
- 2007-05-31 WO PCT/DE2007/000975 patent/WO2007137569A1/de active Application Filing
- 2007-05-31 DE DE112007001781T patent/DE112007001781A5/de not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020190779A1 (en) * | 2000-12-21 | 2002-12-19 | Yusuke Aiba | High-speed current switch circuit |
| DE10143432C1 (de) * | 2001-09-05 | 2003-02-27 | Daimler Chrysler Ag | Treiberschaltung und Ansteuerverfahren für einen feldgesteuerten Leistungsschalter |
| DE10212869A1 (de) * | 2002-03-22 | 2003-09-18 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
| DE10212863A1 (de) * | 2002-03-22 | 2003-10-23 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011086129A1 (de) * | 2010-11-10 | 2012-09-06 | Infineon Technologies Ag | Detektion des Leitungszustandes eines RC-IGBT |
| US8729914B2 (en) | 2010-11-10 | 2014-05-20 | Infineon Technologies Ag | Detection of the conduction state of an RC-IGBT |
| DE102011086129B4 (de) * | 2010-11-10 | 2015-04-30 | Infineon Technologies Ag | Detektion des Leitungszustandes eines Feldeffektransistors |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112007001781A5 (de) | 2009-04-30 |
| WO2007137569A1 (de) | 2007-12-06 |
| DE102006025374B4 (de) | 2008-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| R085 | Willingness to licence withdrawn | ||
| R081 | Change of applicant/patentee |
Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNER: TECHNISCHE UNIVERSITAET CHEMNITZ, 09111 CHEMNITZ, DE Effective date: 20110831 |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |