DE102004021838A1 - Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC - Google Patents
Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC Download PDFInfo
- Publication number
- DE102004021838A1 DE102004021838A1 DE102004021838A DE102004021838A DE102004021838A1 DE 102004021838 A1 DE102004021838 A1 DE 102004021838A1 DE 102004021838 A DE102004021838 A DE 102004021838A DE 102004021838 A DE102004021838 A DE 102004021838A DE 102004021838 A1 DE102004021838 A1 DE 102004021838A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor chip
- chip
- housing
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Die Erfindung betrifft ein Halbleiterbauelement mit einer Kühlvorrichtung.The The invention relates to a semiconductor device with a cooling device.
Mit zunehmender Miniaturisierung von Halbleiterbauelementen, die einen in einem Gehäuse angeordneten Halbleiterchip umfassen, stellt die Ableitung von Wärme aus dem Gehäuse ein immer dringlicheres Problem dar. Zur Kühlung von Halbleiterbauelementen ist es bekannt, den Halbleiterchip elektrisch leitend oder elektrisch isolierend auf einen Chipträger aufzubringen und diesen Chipträger auf einem Kühlkörper anzuordnen. Hiermit sind allerdings erhebliche Material- und Montage-Kosten verbunden. Außerdem ist diese Art der Montage insbesondere bei sehr kleinen Bauelementen, wie beispielsweise SMD-Bauelementen, schwierig.With Increasing miniaturization of semiconductor devices, the one in a housing arranged semiconductor chip, represents the dissipation of heat the housing an ever more urgent problem. For cooling semiconductor devices It is known, the semiconductor chip electrically conductive or electrically insulating on a chip carrier apply and this chip carrier to arrange on a heat sink. However, this involves considerable material and assembly costs connected. Furthermore is this type of assembly especially for very small components, such as SMD components, difficult.
Es ist daher die Aufgabe der vorliegenden Erfindung, ein Halbleiterbauelement mit einer Kühlvorrichtung bereitzustellen, das einfach zu verbauen ist und gleichzeitig eine gute Wärmeableitung ermöglicht.It Therefore, the object of the present invention is a semiconductor device with a cooling device which is easy to install and at the same time one good heat dissipation allows.
Diese Aufgabe wird durch erfindungsgemäße Halbleiterbauelemente gemäß den Ansprüchen 1, 6 und 8 gelöst. Vorteilhafte Ausführungsformen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.These Task is achieved by semiconductor devices according to the invention according to claims 1, 6 and 8 solved. Advantageous embodiments and further developments of the invention are the subject of dependent claims.
Das erfindungsgemäße Halbleiterbauelement gemäß einem ersten Aspekt der Erfindung weist ein Gehäuse, einen Halbleiterchip, ein aus dem Gehäuse herausragendes Anschlussbein und einen Kontaktbügel auf, wobei der Halbleiterchip und das Anschlussbein mittels des Kontaktbügels elektrisch leitend miteinander verbunden sind. Der Kontaktbügel steht mit einem Kühlkörper, der zumindest abschnittweise aus dem Gehäuse herausragt, in thermischem Kontakt.The inventive semiconductor device according to one First aspect of the invention comprises a housing, a semiconductor chip, one out of the case outstanding connection leg and a contact clip, wherein the semiconductor chip and the connecting leg by means of the contact clip electrically conductive with each other are connected. The contact clip stands with a heat sink, the at least partially protruding from the housing, in thermal Contact.
Bei diesem Bauelement übernimmt der Kontaktbügel nicht nur die Funktion der elektrischen Kontaktierung des Halbleiterchips mit dem Anschlussbein, sondern darüber hinaus auch noch eine Kühlfunktion. Ein Teil der im Halbleiterchip anfallenden Verlustwärme wird über den Kontaktbügel zum Kühlkörper geleitet und von dort an die Umgebung, bevorzugt Luft, abgegeben. Der Kontaktbügel ist im Gegensatz zu einem Bonddraht starr, beispielsweise als gestanzter Blechstreifen, ausgebildet. Wegen seines vergleichsweise massiven Aufbaus und seiner größeren Querschnittsfläche eignet er sich nicht nur zur elektrischen Kontaktierung sondern auch zur Ableitung von im Halbleiterchip anfallender Wärme.at takes over this component the contact clip not only the function of the electrical contacting of the semiconductor chip with the connecting leg, but also a cooling function. Part of the heat loss in the semiconductor chip is transferred via the contact bow directed to the heat sink and from there to the environment, preferably air, delivered. The contact clip is in contrast to a bonding wire rigid, for example as a punched Sheet metal strip, formed. Because of its comparatively massive Structure and its larger cross-sectional area is suitable he not only for electrical contact but also for Derivation of accumulating heat in the semiconductor chip.
Zumindest ein Abschnitt des Kühlkörpers ragt aus dem Gehäuse des Halbleiterbauelements heraus. Dieser zumindest eine Abschnitt kann beispielsweise als ebener oder gewinkelter Blechstreifen ausgebildet sein. Ebenso kann der wenigstens eine Abschnitt des Kühlkörpers eine Anzahl von Kühlrippen aufweisen.At least a section of the heat sink protrudes out of the case of the semiconductor device. This at least one section can for example be formed as a flat or angled metal strip be. Likewise, the at least one portion of the heat sink a Number of cooling fins exhibit.
Abhängig davon, ob der Kühlkörper dasselbe elektrische Potential wie der Kontaktbügel aufweisen soll oder nicht, können der Kühlkörper und der Kontaktbügel elektrisch leitend miteinander verbunden oder voneinander elektrisch isoliert sein. Gemäß einer bevorzugten Ausführungsform der Erfindung sind der Kontaktbügel und der Kühlkörper einstückig ausgebildet, wenn eine elektrisch leitende Verbindung zwischen Kontaktbügel und Kühlkörper gewünscht ist.Depending on whether the heat sink the same to have electrical potential like the contact clip or not, can the heat sink and the contact clip electrically connected to each other or electrically be isolated. According to one preferred embodiment The invention relates to the contact clip and the heat sink formed integrally, if an electrically conductive connection between the contact bracket and Heatsink is desired.
Gemäß einer weiteren bevorzugten Ausbildungsform ist der Kontaktbügel zumindest abschnittweise zwischen dem Halbleiterchip und dem Kühlkörper angeordnet. Eine derartige Anordnung ist vor allem dann vorteilhaft, wenn der Halbleiterchip und der Kontaktbügel bzw. der Kontaktbügel und der Kühlkörper jeweils flächig miteinander in thermischem Kontakt stehen, so dass einem vom Halbleiterchip über den Kontaktbügel zum Kühl körper fließenden Wärmestrom ein hoher Querschnitt der wärmeleitenden Verbindung zur Verfügung steht.According to one Another preferred embodiment is the contact clip at least arranged in sections between the semiconductor chip and the heat sink. Such an arrangement is especially advantageous when the Semiconductor chip and the contact clip or the contact clip and the heat sink respectively flat in thermal contact with each other so that one from the semiconductor chip over the contact bow to the cooling body flowing heat flow a high cross-section of the heat-conducting Connection available stands.
Ein anderer Aspekt der Erfindung betrifft ein Halbleiterbauelement mit einem Gehäuse, das einen Halbleiterchip, ein aus dem Gehäuse herausragendes Anschlussbein und einen Kontaktbügel aufweist. Der Halbleiterchip und das Anschlussbein sind mittels des Kontaktbügels elektrisch leitend miteinander verbunden. Erfindungsgemäß ragt bei dieser Anordnung der Kontaktbügel zumindest abschnittweise aus dem Gehäuse heraus.One Another aspect of the invention relates to a semiconductor device with a housing, the one semiconductor chip, a protruding from the housing connecting leg and a contact bar having. The semiconductor chip and the connection leg are by means of of the contact clip electrically connected to each other. In accordance with the invention this arrangement of the contact clip at least in sections out of the case.
Ein weiterer Aspekt der Erfindung betrifft ein Halbleiterbauelement mit einem Gehäuse und einem Halbleiterchip, wobei der Halbleiterchip zumindest abschnittweise aus dem Gehäuse herausragt.One Another aspect of the invention relates to a semiconductor device with a housing and a semiconductor chip, wherein the semiconductor chip at least in sections out of the case protrudes.
Bei dieser Ausführungsform wird ein Teil der im Halbleiterchip anfallenden Verlustwärme unmittelbar von diesem an die Umgebung, beispielsweise Luft, abgegeben.at this embodiment a part of the heat loss incurred in the semiconductor chip is instantaneous from this to the environment, such as air, delivered.
Um die Kühlwirkung zu vergrößern, ist es vorteilhaft, wenn das Halbleiterbauelement, beispielsweise auf dessen Rückseite, strukturiert ist, so dass die Strukturierung ähnlich den Kühlrippen eines Kühlkörpers ausgebildet ist.Around the cooling effect to enlarge is it is advantageous if the semiconductor device, for example its back, is structured so that the structuring similar to the cooling fins a heat sink formed is.
Zwischen den Kühlrippen entsprechenden Elementen der Strukturierung sind Vertiefungen ausgebildet, die bevorzugt an ihrer dem Halbleiterchip zugewandten Seite mit einer Spritz- oder Vergussmasse, bevorzugt der Masse, aus der das Gehäuse des Halbleiterbauelements gebildet ist, gefüllt sind.Recesses are formed between the elements of the structuring corresponding to the cooling ribs, which preferably have an injection or encapsulation on their side facing the semiconductor chip mass, preferably the mass from which the housing of the semiconductor device is formed, are filled.
Um den Halbleiterchip in den Bereichen, die nicht von dem Gehäuse des Halbleiterbauelements umschlossen sind, gegenüber schädigenden Umwelteinflüssen, wie beispielsweise Feuchtigkeit, zu schützen, ist es vorteilhaft, den Halbleiterchip zumindest in diesen Bereichen mit einer Schutzschicht, z.B. mit einer Metallisierung, zu versehen.Around the semiconductor chip in the areas not from the housing of the Semiconductor device are enclosed, against damaging environmental influences, such as For example, to protect moisture, it is advantageous to protect the Semiconductor chip at least in these areas with a protective layer, e.g. with a metallization, to provide.
Im Falle einer Metallisierung kann diese mit einem der Anschlusskontakte des Halbleiterchips elektrisch leitend verbunden sein. Es ist jedoch ebenso möglich, eine elektrisch isolierende und bevorzugt thermisch gut leitende Schutzschicht zu verwenden.in the In the case of metallization, this can be done with one of the connection contacts be electrically conductively connected to the semiconductor chip. However, it is just as possible an electrically insulating and preferably thermally highly conductive Protective layer to use.
Bei allen erfindungsgemäßen Ausführungsformen ist das kühlende Element, das in unmittelbarem thermischen Kontakt mit der Umgebung des Halbleiterbauelements steht, also der Kühlkörper, der Kontaktbügel bzw. der Halbleiterchip, ein Bestandteil des Halbleiterbauelements und fest mit diesem verbunden.at all embodiments of the invention is the cooling Element that is in direct thermal contact with the environment is the semiconductor device, ie the heat sink, the contact bracket or the semiconductor chip, a component of the semiconductor device and firmly connected to this.
Die Erfindung wird nachfolgend anhand von bevorzugten Ausführungsbeispielen dargestellt und in Zeichnungen näher beschrieben. Es zeigen:The Invention will be described below with reference to preferred embodiments shown and closer in drawings described. Show it:
In den Figuren bezeichnen, sofern nicht anders angegeben, gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung.In denote the figures, unless otherwise indicated, like reference numerals same parts with the same meaning.
Das
Gehäuse
Der
Kühlkörper
Je
nach Art des Bauelementes
In
dem Halbleiterchip
Falls
es bei einem Halbleiterbauelement
Der
Kontaktbügel
Ein
weiteres erfindungsgemäßes Halbleiterbauelement
Dieses
Bauelement weist entsprechend dem in
Der
Halbleiterchip
Der
Kontaktbügel
Der
Kontaktbügel
Ein
weiteres erfindungsgemäßes Halbleiterbauelement
Um
die Kühlwirkung
zu verbessern, ist es vorteilhaft, wenn das Halbleiterbauelement
Die
Abschnitte
Zwischen
den Abschnitten
Auf
seiner den Abschnitten
Eine
weitere Möglichkeit
zur effizienten Kühlung
eines Halbleiterbauelementes ist in
Das
Gehäuse
Kühlrippen
Die
Der
Chipträger
Zwei
weitere Anschlussbeine
Bei
allen erfindungsgemäßen Halbleiterbauelementen
Jedes
der in den obigen Ausführungsbeispielen
dargestellten Anschlussbeine
- 11
- HalbleiterbauelementSemiconductor device
- 22
- HalbleiterchipSemiconductor chip
- 2a2a
- Abschnitt des Halbleiterchipssection of the semiconductor chip
- 3a-c3a-c
- Anschlussbeinconnecting leg
- 3b3b
- Chipträgerchip carrier
- 44
- Kontaktbügelcontact bow
- 55
- Kühlkörperheatsink
- 5a5a
- Abschnitt des Kühlkörperssection of the heat sink
- 66
- Bonddrahtbonding wire
- 77
- Gehäusecasing
- 88th
- Isolationsschichtinsulation layer
- 99
- Vertiefungdeepening
- 1010
- Chipträgerchip carrier
- 10a10a
- Abschnitt des Chipträgerssection of the chip carrier
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004021838A DE102004021838A1 (en) | 2004-05-04 | 2004-05-04 | Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004021838A DE102004021838A1 (en) | 2004-05-04 | 2004-05-04 | Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004021838A1 true DE102004021838A1 (en) | 2005-09-08 |
Family
ID=34833259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004021838A Ceased DE102004021838A1 (en) | 2004-05-04 | 2004-05-04 | Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102004021838A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007002157A1 (en) * | 2007-01-15 | 2008-07-17 | Infineon Technologies Ag | Semiconductor arrangement e.g. flap-ship-suitable power semiconductor arrangement, has drain-contact-soldering ball electrically connected with electrode plating, and source and gate soldering balls connected source and gate contact layers |
DE102005057401B4 (en) * | 2005-11-30 | 2009-10-08 | Infineon Technologies Ag | Semiconductor component and method for its production |
DE102007025950B4 (en) * | 2006-06-05 | 2012-08-30 | Denso Corporation | Semiconductor device and its manufacturing method |
WO2015193129A2 (en) * | 2014-06-17 | 2015-12-23 | Robert Bosch Gmbh | Electronics module comprising a device for dissipating heat generated by a semiconductor unit in a plastic housing, and method for the production of an electronics module |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD296580A5 (en) * | 1990-07-12 | 1991-12-05 | Veb Halbleiterwerk Betrieb Im Veb Kombinat Mikroelektronik,De | HOUSING FOR REMOVING MEDIUM LOSS PERFORMANCE |
US5200809A (en) * | 1991-09-27 | 1993-04-06 | Vlsi Technology, Inc. | Exposed die-attach heatsink package |
US5430331A (en) * | 1993-06-23 | 1995-07-04 | Vlsi Technology, Inc. | Plastic encapsulated integrated circuit package having an embedded thermal dissipator |
EP0690499A2 (en) * | 1994-06-30 | 1996-01-03 | Digital Equipment Corporation | Paddleless molded plastic semiconductor chip package |
US5744827A (en) * | 1995-11-28 | 1998-04-28 | Samsung Electronics Co., Ltd. | Three dimensional stack package device having exposed coupling lead portions and vertical interconnection elements |
DE10042839A1 (en) * | 2000-08-30 | 2002-04-04 | Infineon Technologies Ag | Electronic component with metal heatsink, comprises chips arranged on substrate with track conductors insulated from metal by layer of oxide formed upon it |
US6432749B1 (en) * | 1999-08-24 | 2002-08-13 | Texas Instruments Incorporated | Method of fabricating flip chip IC packages with heat spreaders in strip format |
-
2004
- 2004-05-04 DE DE102004021838A patent/DE102004021838A1/en not_active Ceased
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD296580A5 (en) * | 1990-07-12 | 1991-12-05 | Veb Halbleiterwerk Betrieb Im Veb Kombinat Mikroelektronik,De | HOUSING FOR REMOVING MEDIUM LOSS PERFORMANCE |
US5200809A (en) * | 1991-09-27 | 1993-04-06 | Vlsi Technology, Inc. | Exposed die-attach heatsink package |
US5430331A (en) * | 1993-06-23 | 1995-07-04 | Vlsi Technology, Inc. | Plastic encapsulated integrated circuit package having an embedded thermal dissipator |
EP0690499A2 (en) * | 1994-06-30 | 1996-01-03 | Digital Equipment Corporation | Paddleless molded plastic semiconductor chip package |
US5744827A (en) * | 1995-11-28 | 1998-04-28 | Samsung Electronics Co., Ltd. | Three dimensional stack package device having exposed coupling lead portions and vertical interconnection elements |
US6432749B1 (en) * | 1999-08-24 | 2002-08-13 | Texas Instruments Incorporated | Method of fabricating flip chip IC packages with heat spreaders in strip format |
DE10042839A1 (en) * | 2000-08-30 | 2002-04-04 | Infineon Technologies Ag | Electronic component with metal heatsink, comprises chips arranged on substrate with track conductors insulated from metal by layer of oxide formed upon it |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005057401B4 (en) * | 2005-11-30 | 2009-10-08 | Infineon Technologies Ag | Semiconductor component and method for its production |
US7745929B2 (en) | 2005-11-30 | 2010-06-29 | Infineon Technologies Ag | Semiconductor device and method for producing the same |
DE102007025950B4 (en) * | 2006-06-05 | 2012-08-30 | Denso Corporation | Semiconductor device and its manufacturing method |
US8309434B2 (en) | 2006-06-05 | 2012-11-13 | Denso Corporation | Method for manufacturing semiconductor device including semiconductor elements with electrode formed thereon |
DE102007002157A1 (en) * | 2007-01-15 | 2008-07-17 | Infineon Technologies Ag | Semiconductor arrangement e.g. flap-ship-suitable power semiconductor arrangement, has drain-contact-soldering ball electrically connected with electrode plating, and source and gate soldering balls connected source and gate contact layers |
WO2015193129A2 (en) * | 2014-06-17 | 2015-12-23 | Robert Bosch Gmbh | Electronics module comprising a device for dissipating heat generated by a semiconductor unit in a plastic housing, and method for the production of an electronics module |
WO2015193129A3 (en) * | 2014-06-17 | 2016-10-27 | Robert Bosch Gmbh | Electronics module comprising a device for dissipating heat generated by a semiconductor unit in a plastic housing, and method for the production of an electronics module |
CN106463487A (en) * | 2014-06-17 | 2017-02-22 | 罗伯特·博世有限公司 | Electronics module comprising a device for dissipating heat generated by a semiconductor unit in a plastic housing, and method for the production of an electronics module |
US9842796B2 (en) | 2014-06-17 | 2017-12-12 | Robert Bosch Gmbh | Electronic module including a device for dissipating heat generated by a semiconductor unit situated in a plastic housing and method for manufacturing an electronic module |
CN106463487B (en) * | 2014-06-17 | 2019-12-31 | 罗伯特·博世有限公司 | Electronic module with heat conducting device and method for manufacturing electronic module |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112006002488B4 (en) | Semiconductor package | |
DE102005039478B4 (en) | Power semiconductor device with semiconductor chip stack and method for producing the same | |
DE10129388B4 (en) | Method for producing an electronic component | |
EP1006766B1 (en) | Electronic device | |
DE10251955A1 (en) | High-power LED insert module for motor vehicle, has dielectric in flat contact with heat sink and conductive track structure | |
DE202011100820U1 (en) | Power semiconductor | |
DE102005050534B4 (en) | The power semiconductor module | |
EP1265282A2 (en) | Circuit Assembly | |
DE102005030247A1 (en) | Housing of power semiconductor module with outwards coupling members contains insulating substrate, whose main surface away from base plate, carries mutually insulated coupling tracks | |
EP1825511B1 (en) | Semiconductor switching module | |
WO2018202509A1 (en) | Semiconductor module | |
DE102004021838A1 (en) | Semiconductor component (SC) for operating a cooling device has a sliding bow and a chip carrier or semiconductor chip for making thermal contact in sections with a medium surrounding the SC | |
DE10140328B4 (en) | Cooling arrangement for cooling electronic components | |
DE19902462B4 (en) | Semiconductor component with chip-on-chip structure | |
DE10303103B4 (en) | Semiconductor component, in particular power semiconductor component | |
DE10200372A1 (en) | Power semiconductor module has one contact surface of semiconductor element contacting metallized structure via solder material and second contact surface contacting metallized structure via bonding wire | |
DE102004030443A1 (en) | Control apparatus especially a surface mounted power element has power component in a housing with both upper and lower heat dissipating surfaces | |
DE102010000908A1 (en) | Power semiconductor module has external terminal guards that are screwed on regions of terminal tabs, so that external terminal guards are made to press contact the spring elements | |
DE19904279B4 (en) | Semiconductor device | |
DE102014104013A1 (en) | Power semiconductor device | |
DE102005011159A1 (en) | Semiconductor component has surface mountable external contacts, which has external contact surface on lower surface of housing of semiconductor components whereby drain contact surface is provided at rear surface of semiconductor chip | |
DE102008048977B4 (en) | Electronic compact module | |
DE102007005234B4 (en) | Power electronic module with a ceramic enclosure | |
DE102018222748A1 (en) | Cooler | |
DE19932442A1 (en) | Semiconductor component comprises a chip, a substrate and heat conducting media, embedded in a molded material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAV | Publication of unexamined application with consent of applicant | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |