DE102004021054A1 - Semiconductor component for a flip-chip structure has contact layers between a semiconductor chip and a chip carrier - Google Patents

Semiconductor component for a flip-chip structure has contact layers between a semiconductor chip and a chip carrier

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Publication number
DE102004021054A1
DE102004021054A1 DE200410021054 DE102004021054A DE102004021054A1 DE 102004021054 A1 DE102004021054 A1 DE 102004021054A1 DE 200410021054 DE200410021054 DE 200410021054 DE 102004021054 A DE102004021054 A DE 102004021054A DE 102004021054 A1 DE102004021054 A1 DE 102004021054A1
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DE
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Patent type
Prior art keywords
chip
chip carrier
semiconductor
carrier part
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE200410021054
Other languages
German (de)
Other versions
DE102004021054B4 (en )
Inventor
Ralf Otremba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
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Filing date
Publication date

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    • H01L23/495Lead-frames or other flat leads
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Abstract

Between a semiconductor chip (1) and a chip carrier (2) there are first (6a) and second (6b) contact layers with their thicknesses (d1,d2) selected in a vertical direction so that there is no short-fall in a minimum required clearance for insulation stability between the semiconductor chip and the chip carrier.

Description

  • Die Erfindung betrifft ein Halbleiterbauelement mit einem Halbleiterchip und einem Chipträger, wobei der Halbleiterchip auf seiner dem Chipträger zugewandten Vorderseite einen ersten und einen zweiten Anschlusskontakt aufweist und mit dem Chipträger verbunden ist. The invention relates to a semiconductor device having a semiconductor chip and a chip carrier, wherein the semiconductor chip has a first and a second terminal contact on its side facing the front side of the chip carrier and is connected to the chip carrier. Diese Art der Anordnung wird auch als "Flipchip-Anordnung" bezeichnet. This type of arrangement is referred to as a "flip-chip mounting". Auf seiner der Vorderseite gegenüber liegenden Rückseite weist ein derartiger Halbleiterchip, der bevorzugt als Leistungshalbleiterchip ausgebildet ist, üblicherweise eine dritten Anschlusskontakt auf. On its front side opposite rear side, such a semiconductor chip, which is preferably designed as a power semiconductor chip, usually a third terminal contact.
  • Bei dem ersten bzw. dritten Anschlusskontakt handelt es sich beispielsweise um einen ersten und einen zweiten Lastanschluss eines in den Halbleiterchip integrierten Bauelements, beispielsweise um den Source-Anschluss bzw. den Drain-Anschluss eines n-Kanal MOSFETs oder IGBTs. In the first and third connection contact is, for example, a first and a second load terminal of an integrated in the semiconductor chip component, for example to the source terminal or the drain terminal of n-channel MOSFETs or IGBTs. Der zweite Anschlusskontakt bildet einen Steueranschluss des Bauelements, dh den Gate-Anschlussbein einem in den Chip integrierten MOSFET. The second terminal contact forms a control terminal of the component, that is the gate terminal leg built into the chip MOSFET.
  • Die Flipchip-Anordnung wird beispielsweise gewählt, um anstelle des an der Rückseite angeordneten, bei vielen Anwendungen auf hohem elektrischen Potential liegenden dritten Anschlusskontaktes den an der Vorderseite angeordneten ersten Anschlusskontakt, der üblicherweise auf einem niedrigeren elektrischen Potential liegt, mit dem Chipträger elektrisch und mechanisch zu verbinden. The flip-chip mounting, for example, selected to be arranged instead of at the rear, which is at high electrical potential in many applications third terminal contact the arrayed at the front first terminal contact, which typically is at a lower electric potential, to the chip carrier is electrically and mechanically to connect. Durch diese Maßnahme werden Schaltungsverluste sowie elektromagnetische Störstrahlungen reduziert, die anderenfalls, nämlich beim Anschließen des Chipträgers an das hohe Potential des dritten Anschlusskontaktes, aus der verhältnismäßig hohen Kapazität sowie den großen Abmessungen des Chipträgers resultieren. By this measure, circuit losses and electromagnetic interference are reduced, which otherwise, that result when connecting the die carrier to the high potential of the third terminal contact, from the relatively high capacity as well as the large dimensions of the chip carrier.
  • Bei derartigen Anordnungen liegt der auf der Rückseite des Halbleiterchips angeordnete dritte Anschlusskontakt auf einem hohen elektrischen Potential gegenüber dem Chipträger. In such arrangements, the disposed on the back side of the semiconductor chip third connection contact is at a high electrical potential with respect to the chip carrier. Dieses hohe elektrische Potential erstreckt sich infolge einer beim Sägen des Halbleiterchips auftretenden Oberflächenveränderung an dessen in vertikaler Richtung verlaufenden Seiten bis an die dem Chipträger zugewandten Kanten des Halbleiterchips. This high electric potential extends as a result of occurring during sawing the semiconductor chip surface modification on its sides extending in the vertical direction as far as the side facing the chip carrier edges of the semiconductor chip.
  • Um eine ausreichende Spannungsfestigkeit des Halbleiterbauelements zu erreichen ist es erforderlich, einen ausreichend großen Abstand zwischen der Vorderseite des Halbleiterchips und dem Chipträger vorzusehen. To ensure sufficient withstand voltage of the semiconductor device to reach, it is necessary to provide a sufficiently large distance between the front side of the semiconductor chip and the chip carrier. Andererseits ist es vorteilhaft, diesen Abstand nicht zu groß zu wählen, da sich hierdurch insbesondere die Wärmeableitung vom Halbleiterchip über zur Kontaktierung verwendete Lotkugel zum Chipträger unnötig verschlechtert. On the other hand, it is advantageous to choose this distance is not too great, since this particular heat dissipation from the semiconductor chip over-used for contacting solder ball to the chip carrier unnecessarily deteriorated.
  • Üblicherweise wird eine Flipchip-Anordnung mittels an den Anschlusskontakten angeordneten Lotkugeln die auch als "Solder Balls" bezeichnet werden, aus einem niedrigschmelzenden Metall bzw. einer niedrigschmelzenden Legierung realisiert. Typically, a flip-chip mounting is also known as "solder balls" by means arranged on the connecting contacts solder balls, made from a low-melting metal or a low-melting alloy. Bei der Montage wird der Halbleiterchip mit den Lotkugeln auf den aufgeheizten Chipträger gesetzt, wobei die Lotkugeln schmelzen und so den Halbleiterchip mit dem Chipträger elektrisch und mechanisch verbinden. When mounting the semiconductor chip is placed with the solder balls on the heated chip support, said melt the solder balls and so connect the semiconductor chip to the chip carrier is electrically and mechanically. Diese Anordnung weist jedoch den Nachteil auf, dass es schwierig ist, mit derartigen Lotkugeln einen definierten Abstand einzustellen. However, this arrangement has the disadvantage that it is difficult to adjust with such solder balls at a defined distance.
  • Bei derartigen Halbleiterchips mit Flipchip-Anordnung müssen insbesondere der erste und der zweite Anschlusskontakt jeweils mit einem elektrisch leitenden Anschluss kontaktiert werden. In such a semiconductor chip with flip-chip mounting, in particular the first and the second connecting terminal to be contacted in each case with an electrically conductive connection. Da diese beiden Anschlusskontakte auf derselben Seite des Halbleiterchips angeordnet sind, dürfen die entsprechenden elektrischen Anschlüsse nicht elektrisch leitend miteinander verbunden sein, was die Verwendung eines vollmetallischen Chipträgers erschwert. Since both of these connection contacts are arranged on the same side of the semiconductor chip, the appropriate electrical connections must not be electrically conductive with each other, which complicates the use of an all-metallic chip carrier. Alternativ zu einem vollmetallischen Chipträger werden auch Chipträger mit einem elektrisch isolierenden Träger verwendet, die mit einer strukturierten Metallisierung versehen sind und die außerdem noch eine gute Wärmeleitfähigkeit aufweisen. As an alternative to all-metal chip carrier and chip carrier with an electrically insulating support provided with a structured metallization and which furthermore have a good thermal conductivity are used. Derartige Chipträger, beispielsweise mit Kupfer beschichtete Keramikträger, sogenannte DCB-Substrate (DCB = Direct Copper Bonding), weisen den Nachteil auf, dass sie teuer in der Herstellung sind. Such a chip carrier, for example coated with copper ceramic substrate, so-called DBC substrates (DCB = Direct Copper Bonding), have the disadvantage that they are expensive to manufacture.
  • Es ist daher die Aufgabe der vorliegenden Erfindung, ein Halbleiterbauelement mit einem Halbleiterchip bereitzustellen, das elektrisch mit einem preiswerten Chipträger kontaktiert ist, und bei dem ein einzuhaltender Mindestabstand zwischen dem Halbleiterchip und dem Chipträger auf einfache Weise eingestellt ist. It is therefore the object of the present invention to provide a semiconductor device having a semiconductor chip which is electrically contacted with a cheap chip carrier, and in which one to be maintained minimum distance between the semiconductor chip and the chip carrier is set in a simple manner.
  • Diese Aufgabe wird durch ein Halbleiterbauelement gemäß den Merkmalen des Anspruchs 1 gelöst. This object is achieved by a semiconductor device according to the features of claim 1. Vorteilhafte Ausgestaltungen der Erfindung sind Gegenstand der Unteransprüche. Advantageous embodiments of the invention are subject of the subclaims.
  • Das Halbleiterbauelement umfasst einen Halbleiterchip und einen Chipträger, wobei der Halbleiterchip eine erste Seite aufweist, die dem Chipträger zugewandt ist und an der ein erster Anschlusskontakt und ein zweiter Anschlusskontakt angeordnet sind. The semiconductor device comprises a semiconductor chip and a chip carrier, wherein the semiconductor chip has a first side which faces the chip carrier and to which a first connecting terminal and a second terminal contact are arranged. Der Chipträger umfasst des weiteren einen ersten Chipträgerteil und einen von diesem beabstandeten zweiten Chipträgerteil. The chip carrier further includes a first chip carrier part and a second spaced therefrom chip carrier part. Eine erste Kontaktschicht ist zwischen dem ersten Anschlusskontakt und dem ersten Chipträgerteil angeordnet und verbindet diese elektrisch leitend miteinander. A first contact layer is disposed between the first terminal contact and the first chip carrier part and connects these electrically to each other. Entsprechend ist eine zweite Kontaktschicht zwischen dem zweiten Anschlusskontakt und dem zweiten Chipträgerteil angeordnet und verbindet diese ebenfalls elektrisch leitend miteinander. Similarly, a second contact layer between the second terminal contact and the second chip carrier part is arranged and connects these also electrically conductive with each other.
  • Die Dicken der ersten und zweiten Kontaktschicht in einer vertikalen Richtung des Halbleiterchips sind so gewählt, dass zwischen der Vorderseite des Halbleiterchips und dem Chipträger ein vorgegebener minimaler Abstand nicht unterschritten ist. The thicknesses of the first and second contact layer in a vertical direction of the semiconductor chips are selected such that between the front side of the semiconductor chip and the chip carrier a predetermined minimum spacing is not reached. Dieser minimale Abstand ist dabei unter Berücksichtigung einer gewünschten Spannungsfestigkeit des Bauelementes gewählt und insbesondere so gewählt, dass eine vorgegebene Mindestspannungsfestigkeit erreicht wird. This minimum distance is selected in consideration of a desired withstand voltage of the device and that a predetermined minimum voltage resistance is achieved in particular so selected.
  • Die erste bzw. zweite Kontaktschicht dienen als Abstandhalter zwischen dem Chipträger und dem Halbleiterchip. The first or second contact layer serve as spacers between the chip carrier and the semiconductor chip. Da mit zunehmender Dicke der ersten bzw. zweiten Kontaktschicht der Wärmewiderstand zwischen Halbleiterchip und Chipträger steigt und da die Kosten sowie der Zeitbedarf für die Herstellung derartiger Kontaktschichten mit deren Schichtdicke ansteigen, ist die Dicke Idealerweise so gewählt, dass die erforderliche Isolationsfestigkeit, ggf. unter Berücksichtigung einer bestimmten Sicherheitszuschlages, gerade erreicht ist. Since increases with increasing thickness of the first and second contact layer, the thermal resistance between the semiconductor chip and the chip carrier, and since the costs and the time required for the manufacture of such contact layers increase with the layer thickness, the thickness Ideally, is selected so that the required dielectric strength, if necessary taking into account , has just reached a certain safety margin.
  • Bei der Herstellung eines erfindungsgemäßen Halbleiterbauelements wird die erste bzw. zweite Kontaktschicht vorzugsweise auf den ersten bzw. zweiten Anschlusskontakt des Halbleiterchips aufgebracht. In the production of a semiconductor device according to the invention the first and the second contact layer is preferably applied to the first and second connection contact of the semiconductor chip.
  • Anschließend wird der Halbleiterchip mittels Lötverbindungen, die zwischen dem Chipträger und der ersten bzw. zweiten Kontaktschicht angeordnet sind, miteinander verbunden. Subsequently, the semiconductor chip by means of solder joints which are arranged between the chip carrier and the first and second contact layer is connected to each other. Dabei ist es vorteilhaft, wenn der Schmelzpunkt der ersten und zweiten Kontaktschicht höher ist als der Schmelzpunkt des dabei verwendeten, externen Anschluss-Lotes von vorzugsweise 180°C-230°C. It is advantageous if the melting point of the first and second contact layer is higher than the melting point of the terminal solder used in this case, external of preferably 180 ° C-230 ° C. Dadurch ist es möglich, das Halbleiterbauteil mit dem Chipträger, beispielsweise einem PCB-Träger (PCB = Printed Circuit Board), zu verlöten, ohne gleichzeitig die erste und zweite Kontaktschicht aufzuschmelzen. This makes it possible to solder the semiconductor device with the chip carrier, for example a PCB carrier (PCB = Printed Circuit Board), without melting the first and second contact layer simultaneously. Der Schmelzpunkt der ersten bzw. zweiten Kontaktschicht liegt vorzugsweise über 260°C und damit über dem Schmelzpunkt typischer Lotkugeln von üblicherweise zwischen 180°C und 230°C. The melting point of the first and second contact layers is preferably above 260 ° C, above the melting point of typical solder balls of usually between 180 ° C and 230 ° C.
  • Ebenso ist es möglich, die Kontaktschichten auf geeignete Stellen des Chipträgers aufzubringen und sie dann mit den betreffenden Anschlusskontakten des Halbleiterchips zu verlöten. It is also possible to apply the contact layers on suitable sites of the chip carrier and then to be soldered to the respective connecting contacts of the semiconductor chip.
  • Der Chipträger umfasst bevorzugt einen ersten und einen zweiten Chipträgerteil, die voneinander beabstandet sind. The chip carrier preferably comprises a first and a second chip carrier part, which are spaced apart. Der erste und zweite Chipträgerteil können bei der Herstellung des Halbleiterbauelementes, insbesondere bei der Herstellung der oben genannten Lötverbindung zwischen den Kontaktschichten und dem Chipträger, fest miteinander verbunden sein und in einem späteren Verfahrensschritt voneinander getrennt werden. The first and second chip carrier part can be separated in the production of the semiconductor device, particularly in the production of the above solder joint between the contact layers and the chip carrier, to be firmly connected to each other and in a later process step. Dieses Verfahren erleichtert die Justierung zwischen dem Halbleiterchip und dem ersten bzw. zweiten Chipträgerteil. This method facilitates the adjustment between the semiconductor chip and the first or second chip carrier part. Des Weiteren ermöglicht sie die Verwendung eines vollmetallischen Chipträgers, da der erste und der zweite Chipträgerteil nach der Trennung nicht mehr elektrisch leitend miteinander verbunden sind. Furthermore, it allows the use of a fully metallic chip carrier, since the first and the second chip carrier part after the separation is no longer electrically connected to each other.
  • Zur Erhöhung der Isolationsfestigkeit ist es vorgesehen, zwischen den Halbleiterchip und den Chipträger ein Isolationsmaterial einzubringen. To increase the insulation strength, it is contemplated to incorporate an insulating material between the semiconductor chip and the chip carrier. Das Isolationsmaterial wird bevorzugt in den zwischen den Halbleiterchip und dem Chipträger ausgebildeten Zwischenraum eingegossen oder eingespritzt. The insulating material is preferably cast into the space formed between the semiconductor chip and the chip carrier space or injected. Besonders bevorzugt wird als Isolationsmaterial eine Vergussmasse verwendet, mit der zumindest der Halbleiterchip des Halbleiterbauelementes während eines nachfolgenden Verfahrensschrittes vergossen bzw. umspritzt wird. Is particularly preferably used as the insulating material is a potting compound, with which at least the semiconductor chip of the semiconductor device is molded during a subsequent process step or encapsulated.
  • Die typischerweise verwendeten Isolationsmaterialien bzw. Vergussmassen weisen eine Isolationsfestigkeit von vorzugsweise über 50V/μm auf. The insulation materials or encapsulants typically used have a dielectric strength of preferably about 50 V / .mu.m.
  • Die Herstellung der ersten und/oder zweiten Kontaktschicht kann beispielsweise mittels physikalischer (PVD = Physical Vapour Deposition) oder chemischer (CVD = Chemical Vapour Deposition) Abscheidung aus der Gasphase, mittels galvanischer bzw. stromloser Abscheidung oder durch Sputtern erfolgen. The preparation of the first and / or second contact layer may, for example, by physical (PVD = Physical Vapor Deposition) or chemical (CVD = Chemical Vapor Deposition) deposition from the gas phase, by means of galvanic or electroless deposition or by sputtering. Die Abscheidung erfolgt vorzugsweise auf einer mit Öffnungen versehenen Maskenschicht. The deposition preferably occurs on an apertured mask layer. Bevorzugte Materialien für die erste und zweite Kontaktschicht sind Kupfer, Aluminium und weitere Metalle wie zB Gold, Silber, Zinn, Titan, oder Nickel oder Legierungen mit zumindest einem dieser Metalle. Preferred materials for the first and second contact layers are copper, aluminum and other metals such as gold, silver, tin, titanium, or nickel or alloys containing at least one of these metals.
  • Das erfindungsgemäße Halbleiterbauelement wird nachfolgend anhand der beigefügten Figuren näher erläutert. The semiconductor device according to the invention is explained below with reference to the accompanying figures. In den Figuren bezeichnen, sofern nicht anders angegeben, gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung. , Like reference numerals refer unless otherwise indicated in the figures, the same parts with the same meaning. Es zeigen: Show it:
  • 1 1 einen Querschnitt durch ein erfindungsgemäßes Halbleiterbauelement, bei dem ein für die Isolationsfestigkeit zwischen einem Halbleiterchip und einem Chipträger minimal einzuhaltender Abstand unter Verwendung von Kontaktschichten eingestellt ist, a cross-section through an inventive semiconductor component, in which a set for the insulation strength between a semiconductor chip and a chip carrier to be maintained minimal distance using contact layers,
  • 2 2 das Halbleiterbauelement gemäß the semiconductor device according to 1 1 in Draufsicht, und in plan view, and
  • 3 3 ein Halbleiterbauelement entsprechend a semiconductor device in accordance with 2 2 , bei dem der Steueranschluss des ersten Halbleiterchips mit einem Anschlussbein elektrisch verbunden ist, in Draufsicht. Wherein the control terminal of the first semiconductor chip with a connecting leg is electrically connected, in plan view.
  • 1 1 zeigt in Seitenansicht im Querschnitt ein Halbleiterbauelement mit einem Halbleiterchip shows a side view in cross-section a semiconductor device with a semiconductor chip 1 1 , der einen ersten und zweiten Anschlusskontakt Having a first and second terminal contact 1a 1a , . 1b 1b aufweist, die an einer ersten Seite having, on a first side 1d 1d des Halbleiterchips the semiconductor chip 1 1 angeordnet sind. are arranged. Auf einer der ersten Seite On one of the first page 1d 1d gegenüberliegenden zweiten Seite opposite second side 1e 1e ist ein dritter Anschlusskontakt a third terminal contact 1c 1c angeordnet. arranged. In dem ersten Halbleiterchip In the first semiconductor chip 1 1 ist ein Leistungstransistor, beispielsweise ein MOSFET, ein IGBT, ein Thyristor oder ein Bipolartransistor realisiert, wobei der erste und dritte Anschlusskontakt is a power transistor, for example a MOSFET, an IGBT, a thyristor or a bipolar transistor realized, wherein the first and third terminal contact 1a 1a , . 1c 1c Lastanschlüsse dieses Leistungstransistors und der zweite Anschlusskontakt Load terminals of this power transistor and the second terminal contact 1b 1b einen Steueranschluss dieses Leistungstransistors bilden. forming a control terminal of this power transistor. Bei einem als MOSFET oder IGBT ausgebildeten vertikalen Leistungstransistor stellt der erste Anschlusskontakt In one designed as a vertical MOSFET or IGBT power transistor, the first terminal contact 1a 1a beispielsweise den Source-Anschluss, der zweite Anschlusskontakt For example, the source terminal, the second terminal contact 1b 1b den Gate-Anschluss und der dritte Anschlusskontakt the gate terminal and the third terminal contact 1c 1c den Drain-Anschluss dar. the drain is.
  • Der erste Anschlusskontakt The first terminal contact 1a 1a und der zweite Anschlusskontakt and the second terminal contact 1b 1b des Halbleiterchips the semiconductor chip 1 1 sind mit einer ersten Kontaktschicht are connected to a first contact layer 6a 6a bzw. einer zweiten Kontaktschicht and a second contact layer 6b 6b versehen. Provided. Diese Kontaktschichten These contact layers 6a 6a , . 6b 6b sind wegen der guten elektrischen und thermischen Leitfähigkeit beispielsweise aus Kupfer, Aluminium oder einer Legierung dieser Metalle gebildet. are formed because of the good electrical and thermal conductivity such as copper, aluminum or an alloy of these metals. Die Herstellung dieser Kontaktschichten The production of these contact layers 6a 6a , . 6b 6b erfolgt bevorzugt mittels eines Abscheideverfahrens, bei dem Teilchen aus einer flüssigen Phase oder einer Gasphase physikalisch oder chemisch abgeschieden werden. is preferably carried out by means of a deposition process, are deposited physically or chemically with the particles of a liquid phase or a gas phase. Die Abscheidung erfolgt vorzugsweise auf eine erste Maskenschicht, die auf die erste Seite The deposition preferably takes place on a first mask layer formed on the first side 1d 1d des Halbleiterchips the semiconductor chip 1 1 aufgebracht ist. is applied.
  • Der Halbleiterchip The semiconductor chip 1 1 bildet zusammen mit der ersten Kontaktschicht forms together with the first contact layer 6a 6a und der zweiten Kontaktschicht and the second contact layer 6b 6b eine Einheit. one unity. Diese Einheit ist mittels Lotverbindungen This unit is by means of solder joints 7a 7a , . 7b 7b mit einem Chipträger verbunden, der einen ersten Chipträgerteil connected to a chip carrier having a first chip carrier part 2a 2a sowie einen in einer lateralen Richtung des Halbleiterchips as well as a in a lateral direction of the semiconductor chip 1 1 dazu beabstandeten zweiten Chipträgerteil spaced apart from the second chip carrier part 2b 2 B umfasst. includes. Die Lotverbindungen the solder joints 7a 7a , . 7b 7b können beispielsweise dadurch erzeugt werden, dass die Kontaktschichten can be generated for example by the fact that the contact layers 6a 6a , . 6b 6b zunächst mit einer Lotschicht versehen werden. are first provided with a solder layer. Anschließend kann die Einheit aus Halbleiterchip Subsequently, the unit may consist of semiconductor chip 1 1 , den Kontaktschichten The contact layers 6a 6a , . 6b 6b sowie den Lotschichten and the solder layers 7a 7a , . 7b 7b mit dem aufgeheizten Chipträger with the heated chip support 2a 2a , . 2b 2 B kontaktiert werden, so dass die Lote zunächst schmelzen und anschließend nach dem Aushärten die Lotverbindungen be contacted so that the solders melt at first, and then after curing the solder joints 7a 7a , . 7b 7b bilden. form. Damit sind der Halbleiterchip This means that the semiconductor chip 1 1 und der Chipträger and the chip carrier 2a 2a , . 2b 2 B miteinander verbunden und in vertikaler Richtung, das heißt in einer Richtung senkrecht zur ersten Seite connected to each other and in the vertical direction, i.e. in a direction perpendicular to the first side 1d 1d des Halbleiterchips the semiconductor chip 1 1 , voneinander beabstandet. Spaced from each other.
  • Um die Isolationsfestigkeit zwischen dem Halbleiterchip The insulation resistance between the semiconductor chip 1 1 und dem Chipträger and the chip carrier 2a 2a , . 2b 2 B weiter zu erhöhen, ist es vorteilhaft, in den Zwischenraum zwischen dem Halbleiterchip to further increase, it is advantageous in the space between the semiconductor chip 1 1 und dem Chipträger and the chip carrier 2a 2a , . 2b 2 B ein Isolationsmaterial an insulating material 8a-8d 8a-8d einzubringen, bevorzugt einzuspritzen oder einzugießen. introducing, preferably inject or pour. Dieses Isolationsmaterial This insulation material 8a-8d 8a-8d ist vorzugsweise Bestandteil einer Vergussmasse is preferably part of a casting compound 8 8th , die den Halbleiterchip That the semiconductor chip 1 1 vollständig umschließt, und die ein Gehäuse des Halbleiterbauelements bildet. completely encloses and which forms a housing of the semiconductor device.
  • Der zur Isolationsfestigkeit erforderliche Mindestabstand zwischen dem Halbleiterchip The required for insulation resistance minimum distance between the semiconductor chip 1 1 und dem Chipträger and the chip carrier 2a 2a , . 2b 2 B ist insbesondere durch das Material des Isolationsmaterials in particular by the material of the insulating material 8a 8a bis to 8d 8d bestimmt. certainly. Wird als Isolationsmaterial Used as insulation material 8a 8a bis to 8d 8d eine Vergussmasse a sealing compound 8 8th verwendet, so lässt sich damit eine Isolationsfestigkeit von typischerweise größer 50 V/μm erreichen. used, can thus be an insulating resistance of typically greater reach 50 V / .mu.m. Bei einer erforderlichen Isolationsfestigkeit von 2000 V ergibt sich damit eine vertikale Dicke d1 bzw. d2 der ersten bzw. zweiten Kontaktschicht With a required dielectric strength of 2000 V to a vertical thickness thus results d1 and d2 of the first and second contact layer 6a 6a bzw. or. 6b 6b von größer 40 μm. of greater than 40 microns. Durch die Dicken d1 bzw. d2 ergibt sich ein Minimalabstand zwischen dem Halbleiterchip By the thicknesses d1 and d2 gives a minimum distance between the semiconductor chip 1 1 und dem Chipträger and the chip carrier 2a 2a , . 2b 2 B . , Die vertikalen Dicken der Lotverbindungen The vertical thickness of the solder joints 7a 7a , . 7b 7b können so dünn ausgeführt werden, dass sie gegenüber den vertikalen Dicken d1, d2 der ersten bzw. zweiten Kontaktschicht may be so thin as to face the vertical thicknesses d1, d2 of the first and second contact layer 6a 6a bzw. or. 6b 6b vernachlässigbar sind. are negligible.
  • In In 2 2 ist eine Draufsicht auf das Halbleiterbauelement gemäß is a plan view of the semiconductor device according to 1 1 dargestellt. shown. Die Vergussmasse ist in der Darstellung gemäß The sealing compound is in the representation of 2 2 weggelassen, lediglich die äußeren Abmessungen des durch die Vergussmasse omitted, only the outer dimensions of the casting compound by 8 8th gebildeten Gehäuses sind gestrichelt dargestellt. Housing formed are shown in phantom. Die Ansicht zeigt den Halbleiterchip The view shows the semiconductor chip 1 1 mit Blick auf die zweite Seite with a view to the second page 1e 1e des Halbleiterchips the semiconductor chip 1 1 und damit auf den an der zweiten Seite and thus on the on the second side 1e 1e angeordneten dritten Anschlusskontakt arranged third terminal contact 1c 1c . ,
  • Die an der der zweiten Seite The on the second page 1e 1e gegenüberliegenden ersten Seite opposed first side 1d 1d angeordneten Anschlusskontakte arranged connection contacts 1a 1a , . 1b 1b sind jeweils gestrichelt angedeutet. are each indicated by dashed lines. Wie aus as from 2 2 ersichtlich ist, ragen die beiden Chipträgerteile It can be seen projecting the two chip carrier parts 2a 2a , . 2b 2 B in lateraler Richtung des ersten Halbleiterchips in the lateral direction of the first semiconductor chip 1 1 in dem Beispiel über diesen hinaus. in the example beyond it.
  • Vor der Herstellung der in Before the production in 1 1 dargestellten Lotverbindungen solder joints shown 7a 7a , . 7b 7b zwischen der ersten bzw. zweiten Kontaktschicht between the first and second contact layer 6a 6a bzw. or. 6b 6b sind der erste Chipträgerteil are the first chip carrier part 2a 2a und der zweite Chipträgerteil and the second chip carrier part 2b 2 B mittels eines in by means of an in 2 2 gestrichelt dargestellten Verbindungssteges Connecting web shown in phantom 2c 2c miteinander verbunden. connected with each other. Eine derartiger Verbindungssteg One such connection web 2c 2c erleichtert die Positionierung des Halbleiterchips facilitates the positioning of the semiconductor chip 1 1 in Bezug auf den ersten bzw. zweiten Chipträgerteil in relation to the first or second chip carrier part 2a 2a bzw. or. 2b 2 B . , Der Verbindungssteg The connecting web 2c 2c kann nach dem Herstellen der Lotverbindungen can after producing the soldered joints 7a 7a , . 7b 7b , bevorzugt nach dem Vergießen zumindest des Halbleiterchips , Preferably after molding at least the semiconductor chip 1 1 , entfernt werden, wodurch der zwei voneinander beabstandete Chipträgerteile Are removed, whereby the two spaced-apart chip carrier parts 2a 2a , . 2b 2 B umfassende Chipträger comprehensive chip carrier 2 2 entsteht. arises. In entsprechender Weise kann der Chipträger Likewise, the chip carrier may 2 2 auch mehr als zwei Chipträgerteile more than two chip carrier portions 2a 2a , . 2b 2 B umfassen, die vor dem Vereinzeln durch eine entsprechend höhere Anzahl von Verbindungsstegen miteinander verbunden sind. include, but are connected together by a correspondingly higher number of connecting webs before the separation. Das Vereinzeln kann dabei so erfolgen, dass kein, ein, mehrere oder alle Chipträgerteile aus dem Gehäuse herausgeführt sind. The separation can be carried out so that none, one, several or all chip carrier parts are led out of the housing.
  • Die Ansteuerung des in dem ersten Halbleiterchip integrierten Bauelements erfolgt optional mittels eines Steuerschaltkreises, der in einem zweiten Halbleiterchip The control of the integrated in the first semiconductor chip component is optional means of a control circuit in a second semiconductor chip 3 3 integriert ist, der in dem Beispiel auf dem ersten Chipträgerteil is integrated, which in the example on the first chip carrier part 2a 2a angeordnet ist. is arranged. Die dem ersten Chipträgerteil The first chip carrier part 2a 2a zugewandte Seite dieses zweiten Halbleiterchips facing side of this second semiconductor chip 3 3 kann dabei elektrisch leitend mit dem zweiten Chipträgerteil can in this case electrically conductively connected to the second chip carrier part 2a 2a verbunden sein, oder kann elektrisch gegenüber diesem zweiten Chipträgerteil be connected, or may be electrically insulated from this second chip carrier part 2a 2a isoliert sein. be insulated. Um diesen zweiten Halbleiterchip To this second semiconductor chip 3 3 isoliert auf dem zweiten Chipträgerteil isolated on the second chip carrier part 2a 2a aufzubringen, ist dieser Halbleiterchip apply, this semiconductor chip 3 3 beispielsweise mittels eines elektrisch isolierenden Klebers auf das Chipträgerteil for example by means of an electrically insulating adhesive to the chip carrier part 2a 2a aufgeklebt. glued.
  • Des weiteren umfasst das erfindungsgemäße Halbleiterbauelement zu seiner äußeren Kontaktierung und Montage Anschlussbeine Further, semiconductor device of the invention comprises at its outer contacting and mounting connecting legs 4a 4a - 4g 4g . , Ein aus dem durch die Vergussmasse gebildeten Gehäuse herausragendes erstes Anschlussbein An outstanding from the formed by the potting compound housing first terminal leg 4a 4a kontaktiert den an der zweiten Seite contacts the on the second side 1e 1e des ersten Halbleiterchips the first semiconductor chip 1 1 angeordneten dritten Anschlusskontakt arranged third terminal contact 1c 1c . , Hierzu ist der dritte Anschlusskontakt For this is the third terminal contact 1c 1c mittels eines Bonddrahtes by means of a bonding wire 5a 5a mit dem ersten Anschlussbein to the first terminal leg 4a 4a verbunden. connected. Ein zweites Anschlussbein A second connection leg 4c 4c ist bevorzugt einstückig mit dem ersten Chipträgerteil is preferably integral with the first chip carrier part 2a 2a verbunden, um den an der ersten Seite connected to the to the first side 1d 1d angeordneten ersten Anschlusskontakt arranged first terminal contact 1a 1a des ersten Halbleiterchips the first semiconductor chip 1 1 zu kontaktieren. to contact. Das zweite Chipträgerteil The second chip carrier part 2b 2 B und mögliche weitere Chipträgerteile weisen in dem Ausführungsbeispiel keine unmittelbar nach außen reichende elektrisch leitende Verbindung auf. and possible further chip carrier parts have no directly reaching outwardly electrically conductive connection in the embodiment. Wie bereits erläutert, entspricht der zweite Anschlusskontakt As already explained, the second terminal contact corresponds 1b 1b beispielsweise einem Steueranschluss eines in dem ersten Halbleiterchip For example, a control terminal of a semiconductor chip in the first 1 1 integrierten Leistungsbauelements, wobei in dem Ausführungsbeispiel eine Ansteuerung dieses Bauelements über den auf den ersten Chipträgerteil integrated power device, wherein, in the embodiment, a control of this device over the first of the chip carrier part 2a 2a aufgebrachten Steuerschaltkreis applied control circuit 3 3 erfolgt. he follows. Der Steuerschaltkreis The control circuit 3 3 ist hierfür mittels eines Bonddrahtes is for this purpose by means of a bonding wire 5b 5b an dem zweiten Chipträgerteil angeschlossen. connected to the second chip carrier part. Der Steuerschaltkreis The control circuit 3 3 weist weitere Anschlüsse auf, die mittels Bonddrähten has more terminals by means of bonding wires 5d 5d , . 5e 5e , . 5f 5f , . 5g 5g an aus dem Gehäuse herausragende Anschlussbeine to out of the housing connecting legs 4d 4d , . 4e 4e , . 4f 4f , . 4g 4g angeschlossen sind. are connected. Außerdem ist ein weiterer Anschluss des Steuerschaltkreises Also, another terminal of the control circuit 3 3 an dem mit dem ersten Chipträgerteil at the first to the chip carrier part 2a 2a verbundenen Anschluss connected terminal 4c 4c über einen Bonddraht via a bonding wire 5d 5d angeschlossen, um diesen Anschluss des Steuerschaltkreises connected to this port of the control circuit 3 3 auf das Potential des ersten Anschlusskontaktes to the potential of the first connection contact 1a 1a des Bauelements zu legen. to place the component.
  • Bei Integration eines Leistungs-MOSFETs oder Leistungs-IGBTs in dem ersten Halbleiterchip By integrating power MOSFETs or power IGBTs in the first semiconductor chip 1 1 bildet das erste Anschlussbein forming the first connecting leg 4a 4a beispielsweise den von Außen zugänglichen Drain-Anschluss des Bauelements, das zweite Anschlussbein For example, the accessible external drain terminal of the device, the second terminal leg 4c 4c den von Außen zugänglichen Source-Anschluss des Bauelements, während der Gate-Anschluss nicht unmittelbar von Außen zugänglich ist, sondern über den Steuerschaltkreis the externally accessible source of the device, while the gate terminal is accessible from outside is not directly, but via the control circuit 3 3 angesteuert ist, der von Außen zugängliche Ein- und Ausgänge is driven, the externally accessible input and output 4d-4g 4d-4g aufweist. having.
  • Die äußere Abgrenzung der Vergussmasse The outer boundary of the sealing compound 8 8th ist gestrichelt dargestellt. shown in phantom. Die Vergussmasse the sealing compound 8 8th umschließt zumindest den Halbleiterchip surrounds at least the semiconductor chip 1 1 , darüber hinaus bevorzugt die Kontaktschicht , In yet another aspect, the contact layer 6a 6a , . 6b 6b und zumindest abschnittweise den ersten und zweiten Chipträgerteil and at least sections of the first and second chip carrier part 2a 2a , . 2b 2 B . , Der erste Chipträgerteil The first chip carrier part 2a 2a weist besonders bevorzugt eine dem Halbleiterchip has particularly preferably a semiconductor chip 1 1 abgewandte, erste Seite facing away from the first side 2h 2h auf, die zumindest nicht vollständig von der Vergussmasse on which at least not completely of the encapsulant 8 8th umschlossen ist. is enclosed. Dadurch kann die erste Seite This allows the first page 1h 1h des ersten Chipträgerteils of the first chip carrier part 2a 2a zur elektrischen und/oder thermischen Kontaktierung des Halbleiterbauelementes verwendet werden. are used for electrical and / or thermal contact with the semiconductor device.
  • Nach dem Entfernen des Verbindungssteges After removal of the connecting web 2c 2c weisen der erste und zweite Chipträgerteil , the first and second die support member 2a 2a bzw. or. 2b 2 B Fortsätze projections 2d 2d bzw. or. 2e 2e auf, deren Enden on whose ends 2f 2f bzw. or. 2g 2g nicht von der Vergussmasse not by the casting compound 8 8th bedeckt sind. are covered. Die Enden the ends 2f 2f bzw. or. 2g 2g sind jedoch nicht zur äußeren Kontaktierung des Halbleiterbauelements vorgesehen und nach dem Vereinzeln elektrisch voneinander getrennt. However, no provision for external contacting of the semiconductor device and electrically separated from each other after separation.
  • Anders als in Unlike 2 2 gezeigt, kann der zweite Chipträgerteil shown, the second die support member may 2b 2 B von Außen kontaktierbar sein. be contacted from the outside. Dies ist beispielhaft in This is exemplified in 3 3 dargestellt. shown. Der zweite Chipträger The second chip carrier 2b 2 B ist mittels eines Bonddrahtes by means of a bonding wire 5i 5i elektrisch leitend mit einem Anschlussbein electrically conductively connected to a connecting leg 4g 4g verbunden, das aus dem Gehäuse connected to the out of the housing 8 8th heraus ragt und somit von Außen kontaktierbar ist. stands out and thus be contacted from the outside.
  • In dem dargestellten Ausführungsbeispiel ist der zweite Chipträgerteil In the illustrated embodiment, the second chip carrier part is 2b 2 B mit dem Steueranschluss to the control terminal 1b 1b des ersten Halbleiterchips the first semiconductor chip 1 1 elektrisch verbunden. electrically connected. Auf diese Weise ist es möglich, den ersten Halbleiterchip In this way it is possible, the first semiconductor chip 1 1 mittels eines von Außen an das Anschlussbein by means of an external connection to the leg 4g 4g angelegten Steuersignals anzusteuern. driving control signal applied. Der Bonddraht The bonding wire 5h 5h , der den Steuerschaltkreis That the control circuit 3 3 elektrisch leitend mit dem zweiten Chipträgerteil electrically conductively connected to the second chip carrier part 2b 2 B verbindet, ist dann optional und kann beispielsweise dazu genutzt werden, die am zweiten Chipträgerteil combines, then optional and can for example be used to that on the second chip carrier part 2b 2 B bzw. die am zweiten Anschlusskontakt or on the second terminal contact 1b 1b anliegende Spannung zu detektieren, oder beispielsweise den ersten Halbleiterchip voltage applied to detect, for example, or the first semiconductor chip 1 1 anzusteuern, insbesondere an- oder abzuschalten. to drive, in particular on or off.
  • Das Anschlussbein The connecting leg 4g 4g kann insbesondere an dem zweiten Chipträgerteil may, in particular on the second chip carrier part 2b 2 B einstückig angeformt sein. be integrally molded. Auf den Bonddraht On the bonding wire 5i 5i kann dann verzichtet werden. can then be dispensed.
  • 1 1
    erster Halbleiterchip the first semiconductor chip
    1a 1a
    erster Anschlusskontakt the first terminal contact
    1b 1b
    zweiter Anschlusskontakt second connection contact
    1c 1c
    dritter Anschlusskontakt the third terminal contact
    1d 1d
    erste Seite des ersten Halbleiterchips first side of the first semiconductor chip
    1e 1e
    zweite Seite des ersten Halbleiterchips second side of the first semiconductor chip
    2 2
    Chipträger chip carrier
    2a 2a
    erster Chipträgerteil the first chip carrier part
    2b 2 B
    zweiter Chipträgerteil the second chip carrier part
    2c 2c
    Verbindungssteg connecting web
    2d 2d
    Ansatz des ersten Chipträgerteils Approach of the first chip carrier part
    2e 2e
    Ansatz des zweiten Chipträgerteils Approach of the second chip carrier part
    2f 2f
    Ende des Ansatzes des ersten Chipträgerteils End of the extension of the first chip carrier part
    2g 2g
    Ende des Ansatzes des zweiten Chipträgerteils End of the extension of the second chip carrier part
    2h 2h
    erste Seite des ersten Chipträgerteils first side of the first chip carrier part
    3 3
    Steuerschaltkreis Control circuit
    4a-4g 4a-4g
    Anschlussbein connecting leg
    5a, 5c-5i 5a, 5c-5i
    Bonddraht bonding wire
    6a 6a
    erste Kontaktschicht first contact layer
    6b 6b
    zweite Kontaktschicht second contact layer
    7a, 7b 7a, 7b
    Lotverbindung solder
    8 8th
    Vergussmasse, Gehäuse Potting compound, housing
    8a-8d 8a-8d
    Isolationsschicht insulation layer
    d1 d1
    Dicke der ersten Kontaktschicht Thickness of the first contact layer
    d2 d2
    Dicke der zweiten Kontaktschicht Thickness of the second contact layer

Claims (14)

  1. Halbleiterbauelement mit wenigstens einem ersten Halbleiterchip ( A semiconductor device comprising at least a first semiconductor chip ( 1 1 ) und einem Chipträger ( ) And a chip carrier ( 2 2 ), wobei der Halbleiterchip ( ), Wherein the semiconductor chip ( 1 1 ) eine erste Seite aufweist, die dem Chipträger ( ) Has a first side (the chip carrier 2 2 ) zugewandt ist und an der ein erster Anschlusskontakt ( ) Faces and the (a first connector contact 1a 1a ) und ein zweiter Anschlusskontakt ( ) And a second terminal contact ( 1b 1b ) angeordnet sind, der Chipträger ( ) Are arranged (the chip carrier 2 2 ) einen ersten Chipträgerteil ( ) Comprises a first chip carrier part ( 2a 2a ) und zumindest einen zu diesem beabstandeten zweiten Chipträgerteil ( ) And at least one (at this spaced second chip carrier part 2b 2 B ) aufweist, eine erste Kontaktschicht ( ), A first contact layer ( 6a 6a ) zwischen dem ersten Anschlusskontakt ( ) (Between the first terminal contact 1a 1a ) und dem ersten Chipträgerteil ( ) And the first chip carrier part ( 2a 2a ) angeordnet ist und diese elektrisch leitend miteinander verbindet, eine zweite Kontaktschicht ( ) And connects these electrically to each other, a second contact layer ( 6b 6b ) zwischen dem zweiten Anschlusskontakt ( ) (Between the second terminal contact 1b 1b ) und dem zweiten Chipträgerteil ( ) And the second chip carrier part ( 2b 2 B ) angeordnet ist und diese elektrisch leitend miteinander verbindet, und die Dicken ( ) And connects these electrically to each other, and the thicknesses ( d1 d1 , . d2 d2 ) der ersten ( ) the first ( 6a 6a ) und zweiten ( ) And second ( 6b 6b ) Kontaktschicht in einer vertikalen Richtung so gewählt sind, dass zwischen dem Halbleiterchip ( ) Contact layer are selected in a vertical direction so that between the semiconductor chip ( 1 1 ) und dem Chipträger ( ) And the chip carrier ( 2 2 ) ein vorgegebener minimal einzuhaltender Abstand nicht unterschritten ist. ) To be maintained a predetermined minimum distance is not exceeded.
  2. Halbleiterbauelement nach Anspruch 1, bei dem zwischen dem Halbleiterchip ( A semiconductor device according to claim 1, in which (between the semiconductor chip 1 1 ) und dem Chipträger ( ) And the chip carrier ( 2 2 ) zumindest abschnittweise ein Isolationsmaterial ( ) At least in sections an insulating material ( 8a-8d 8a-8d ) angeordnet ist. ) Is arranged.
  3. Halbleiterbauelement nach Anspruch 2, bei dem das Isolationsmaterial ( A semiconductor device according to claim 2, wherein (the insulating material 8a-8d 8a-8d ) eine Vergussmasse ( ) A sealing compound ( 8 8th ) ist, die den wenigstens einen ersten Halbleiterchip ( ), The (at least one first semiconductor chip 1 1 ) umschließt. ) Encloses.
  4. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem ein Verhältnis zwischen einer maximalen Sperrspannung des Halbleiterbauelementes und der Dicke ( Semiconductor component according to one of the preceding claims, wherein a ratio between a maximum blocking voltage of the semiconductor device and the thickness ( d1 d1 , . d2 d2 ) der ersten ( ) the first ( 6a 6a ) bzw. zweiten ( ) And second ( 6b 6b ) Kontaktschicht in vertikaler Richtung über 50 V/μm beträgt. ) Contact layer in the vertical direction about 50 volts / micron.
  5. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem die erste ( Semiconductor component according to one of the preceding claims, wherein the first ( 6a 6a ) und/oder die zweite ( ) And / or the second ( 6b 6b ) Kontaktschicht einen Schmelzpunkt von über 260°C aufweisen. ) Contact layer having a melting point of over 260 ° C.
  6. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem die erste ( Semiconductor component according to one of the preceding claims, wherein the first ( 6a 6a ) und/oder zweite Kontaktschicht ( () And / or second contact layer 6b 6b ) mittels physikalischer oder chemischer Abscheidung aus der Gasphase, Sputtern oder mittels galvanischer bzw. stromloser Abscheidung hergestellt sind. ) Are produced from the gas phase, sputtering or by means of galvanic or electroless deposition by physical or chemical deposition.
  7. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem die erste ( Semiconductor component according to one of the preceding claims, wherein the first ( 6a 6a ) und/oder zweite Kontaktschicht ( () And / or second contact layer 6b 6b ) aus Kupfer, Aluminium, Gold, Silber, Zinn, Titan, Nickel oder einer Legierung zumindest eines dieser Metalle gebildet ist. ) Of copper, aluminum, gold, silver, tin, titanium, nickel or an alloy of these metals is at least formed.
  8. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem zwischen der ersten Kontaktschicht ( Semiconductor component according to one of the preceding claims, in which (between the first contact layer 6a 6a ) und dem ersten Chipträgerteil ( ) And the first chip carrier part ( 2a 2a ) und/oder zwischen der zweiten Kontaktschicht ( ) And / or (between the second contact layer 6b 6b ) und dem zweiten Chipträgerteil ( ) And the second chip carrier part ( 2b 2 B ) eine Lötverbindung ( ) A solder ( 7a 7a , . 7b 7b ) ausgebildet ist. ) is trained.
  9. Halbleiterbauelement nach einem der vorhergehenden Ansprüche, bei dem ein Leistungsbauelement in der den ersten Halbleiterchip ( Semiconductor component according to one of the preceding claims, in which a power component in the (first semiconductor chip 1 1 ) integriert ist und das eine Ansteuerschaltung für das Leistungsbauelement aufweist, die in einem zweiten Halbleiterchip ( ) Is integrated and which has a drive circuit for the power component, the (in a second semiconductor chip 3 3 ) integriert ist. ) Is integrated.
  10. Halbleiterbauelement nach Anspruch 9, bei dem der zweite Halbleiterchip ( A semiconductor device according to claim 9, wherein the second semiconductor chip ( 3 3 ) auf einen der Chipträgerteile ( ) (On one of the chip carrier parts 2a 2a , . 2b 2 B ) aufgebracht ist. ) Is applied.
  11. Halbleiterbauelement nach Anspruch 9 oder 10, bei dem das Leistungsbauelement ein MOSFET, ein IGBT, ein Thyristor oder ein Bipolartransistor ist. A semiconductor device according to claim 9 or 10, in which the power component is a MOSFET, an IGBT, a thyristor or a bipolar transistor.
  12. Halbleiterbauelement nach einem der Ansprüche 9 bis 11, bei dem ein Lastanschluss des Leistungsbauelements an den ersten Chipträgerteil ( Semiconductor component according to one of claims 9 to 11, in which a load terminal of the power device (the first chip carrier part 2a 2a ) und ein Steueranschluss an den zweiten Chipträgerteil ( ) And a control terminal to the second chip carrier part ( 2b 2 B ) angeschlossen ist. ) connected.
  13. Halbleiterbauelement nach Anspruch 12, bei dem der zweite Chipträgerteil ( A semiconductor device according to claim 12, wherein the second chip carrier part ( 2b 2 B ) an einen Anschluss des zweiten Halbleiterchips ( ) (To a terminal of the second semiconductor chip 3 3 ) angeschlossen ist. ) connected.
  14. Halbleiterbauelement nach einem der vorhergehenden Ansprüche mit einem Gehäuse ( Semiconductor component according to one of the preceding claims having a housing ( 8 8th ), wobei höchstens ein Chipträgerteil ( (), Wherein a maximum of one chip carrier part 4c 4c ) aus dem Gehäuse ( ) From the housing ( 8 8th ) herausgeführt ist. ) Is led out.
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US9275878B2 (en) 2013-10-01 2016-03-01 Infineon Technologies Ag Metal redistribution layer for molded substrates
US9806056B2 (en) 2013-10-01 2017-10-31 Infineon Technologies Ag Method of packaging integrated circuits
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