DE102004014315A1 - Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid - Google Patents

Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid Download PDF

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Publication number
DE102004014315A1
DE102004014315A1 DE102004014315A DE102004014315A DE102004014315A1 DE 102004014315 A1 DE102004014315 A1 DE 102004014315A1 DE 102004014315 A DE102004014315 A DE 102004014315A DE 102004014315 A DE102004014315 A DE 102004014315A DE 102004014315 A1 DE102004014315 A1 DE 102004014315A1
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DE
Germany
Prior art keywords
atoms
metal
eicosahedron
boron
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102004014315A
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English (en)
Inventor
Volker Adasch
Kai-Uwe Hess
Harald Hillebrecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DRONCO AG
Original Assignee
DRONCO AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DRONCO AG filed Critical DRONCO AG
Priority to DE102004014315A priority Critical patent/DE102004014315A1/de
Publication of DE102004014315A1 publication Critical patent/DE102004014315A1/de
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/12—Cut-off wheels
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung eines kristallinen Metallborids, bei dem ein Reaktionsgemisch hergestellt oder bereitgestellt wird, wobei wenigstens eine erste Komponente des Reaktionsgemisches das Metall (Me) enthält oder das elementare Metall ist und wenigstens eine zweite Komponente des Reaktionsgemisches Bor (B) enthält oder elementares Bor ist und wenigstens eine dritte Komponente des Reaktionsgemisches ein Hilfskomponente, insbesondere zum Lösen der wenigstens einen ersten Komponente und der wenigstens einen zweiten Komponente einerseits und zur Reduzierung des Sättigungsdampfdrucks der einzelnen Komponenten des Reaktionsgemisches andererseits, ist, bei dem das Reaktionsgemisch auf wenigstens eine vorgegebene oder vorgebbare Prozesstemperatur erwärmt wird, wobei das Reaktionsgemisch in eine Reaktionsschmelze überführt wird, und bei dem während einer vorgegebenen oder vorgebbaren Prozessdauer aus der Reaktionsschmelze als Produkt wenigstens ein Metallborid(Mg¶x¶B¶y¶)-Kristall mit einem stöchiometrischen B : Me-Verhältnis x¶B¶ : x¶Me¶ von wenigstens 11 : 1 erzeugt wird. Die Erfindung betrifft weiterhin ein kristallines Metallborid, insbesondere hergestellt nach dem Verfahren.
DE102004014315A 2003-10-01 2004-03-22 Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid Ceased DE102004014315A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102004014315A DE102004014315A1 (de) 2003-10-01 2004-03-22 Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10346174 2003-10-01
DE102004014315A DE102004014315A1 (de) 2003-10-01 2004-03-22 Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid

Publications (1)

Publication Number Publication Date
DE102004014315A1 true DE102004014315A1 (de) 2005-05-12

Family

ID=34428182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004014315A Ceased DE102004014315A1 (de) 2003-10-01 2004-03-22 Verfahren zur Herstellung von kristallinem Metallborid und kristallines Metallborid

Country Status (1)

Country Link
DE (1) DE102004014315A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008056824A1 (de) 2008-11-11 2010-05-20 H.C. Starck Gmbh Anorganische Verbindungen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008056824A1 (de) 2008-11-11 2010-05-20 H.C. Starck Gmbh Anorganische Verbindungen

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