DE10195143T1 - Sputterverfahren - Google Patents

Sputterverfahren

Info

Publication number
DE10195143T1
DE10195143T1 DE10195143T DE10195143T DE10195143T1 DE 10195143 T1 DE10195143 T1 DE 10195143T1 DE 10195143 T DE10195143 T DE 10195143T DE 10195143 T DE10195143 T DE 10195143T DE 10195143 T1 DE10195143 T1 DE 10195143T1
Authority
DE
Germany
Prior art keywords
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10195143T
Other languages
English (en)
Inventor
Hilke Donohue
Mark Graeme Martin Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aviza Europe Ltd
Original Assignee
Aviza Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aviza Europe Ltd filed Critical Aviza Europe Ltd
Publication of DE10195143T1 publication Critical patent/DE10195143T1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
DE10195143T 2001-01-04 2001-12-21 Sputterverfahren Ceased DE10195143T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0100151.0A GB0100151D0 (en) 2001-01-04 2001-01-04 Methods of sputtering
PCT/GB2001/005795 WO2002053796A1 (en) 2001-01-04 2001-12-21 Methods of sputtering using krypton

Publications (1)

Publication Number Publication Date
DE10195143T1 true DE10195143T1 (de) 2003-09-04

Family

ID=9906222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10195143T Ceased DE10195143T1 (de) 2001-01-04 2001-12-21 Sputterverfahren

Country Status (4)

Country Link
US (1) US20030024808A1 (de)
DE (1) DE10195143T1 (de)
GB (2) GB0100151D0 (de)
WO (1) WO2002053796A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009009275B9 (de) * 2008-03-03 2013-05-16 Infineon Technologies Ag Aufsputterverfahren und Chip

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2399350B (en) * 2003-03-11 2006-06-21 Trikon Technologies Ltd Methods of forming tungsten or tungsten containing films
US20050150758A1 (en) 2004-01-09 2005-07-14 Yakshin Andrey E. Processes and device for the deposition of films on substrates
WO2016191690A1 (en) 2015-05-27 2016-12-01 Saint-Gobain Performance Plastics Corporation Conductive thin film composite

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002545A (en) * 1976-02-09 1977-01-11 Corning Glass Works Method of forming a thin film capacitor
DE3802998A1 (de) * 1988-02-02 1989-08-10 Basf Ag Verfahren zur herstellung einer duennen roentgenamorphen aluminiumnitrid- oder aluminiumsiliciumnitridschicht auf einer oberflaeche
KR100209856B1 (ko) * 1990-08-31 1999-07-15 가나이 쓰도무 반도체장치의 제조방법
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
US5281554A (en) * 1991-02-08 1994-01-25 Sharp Kabushiki Kaisha Method for producing a semiconductor device having a tantalum thin film
JP2740591B2 (ja) * 1991-02-08 1998-04-15 シャープ株式会社 半導体装置の製造方法
US5766747A (en) * 1991-03-11 1998-06-16 Regents Of The University Of Califonia Magnetron sputtered boron films
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5633199A (en) * 1995-11-02 1997-05-27 Motorola Inc. Process for fabricating a metallized interconnect structure in a semiconductor device
US6106678A (en) * 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
EP0846786A3 (de) * 1996-12-06 2001-11-07 Applied Materials, Inc. PVD-Kammer sowie Verfahren zur Abscheidung von Werkstoffen bei niedrigem Druck
US5783262A (en) * 1996-12-09 1998-07-21 Regents Of The University Of California Growth of oxide exchange bias layers
US6214720B1 (en) * 1999-04-19 2001-04-10 Tokyo Electron Limited Plasma process enhancement through reduction of gaseous contaminants
TW465179B (en) * 1999-05-27 2001-11-21 Murata Manufacturing Co Surface acoustic wave device and method of producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009009275B9 (de) * 2008-03-03 2013-05-16 Infineon Technologies Ag Aufsputterverfahren und Chip

Also Published As

Publication number Publication date
WO2002053796A1 (en) 2002-07-11
US20030024808A1 (en) 2003-02-06
GB2375117B (en) 2004-09-29
GB0216179D0 (en) 2002-08-21
GB2375117A (en) 2002-11-06
GB0100151D0 (en) 2001-02-14

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: ZEITLER, VOLPERT, KANDLBINDER, 80539 MUENCHEN

8110 Request for examination paragraph 44
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: C23C0014350000

Ipc: C23C0014340000

R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20120321