DD292677A5 - DEVICE FOR PLASMA-ASSISTED DEPOSITION OF HARD-PLASTIC LAYER SYSTEMS - Google Patents

Abstract

The device for plasma-assisted deposition of hard material layer systems based on titanium, boron, aluminum, nitrogen is used to coat metallic and non-metallic substrates, tools and components for surface refinement, corrosion, friction and wear reduction. According to the invention, the object is achieved by separating and independently controllable in a vacuum chamber an arc discharge evaporator for titanium and an electron beam evaporator for boron or aluminum in the homogeneous region of a nitrogen argon plasma and the substrate uptake in the region of a constant ion density of (109-1010) ions / cm3 are arranged. Fig. 1 {plasma-assisted deposition; Hard coating systems; Arc evaporator; Electron beam evaporator; Nitrogen-argon plasma; Titanium; Boron; Aluminum; Nitrogen}

Description

For this 1 page drawing

Field of application of the invention

The invention is used for the plasma-assisted coating of metallic and non-metallic substrates, tools and components with an adherent hard material growth system on the basalt titanium, boron, aluminum and nitrogen for surface refinement, corrosion, reduction of roughness and wear.

Characteristic of the known technical solutions

Various methods for depositing multiple and mixed layers are known.

JP 58-217674 describes the deposition of titanium nitride-gold mixed layers using a plurality of resistance-heated evaporators and a glow-cathode arrangement for plasma generation. This is also possible when two electron beam evaporators are used for titanium and gold evaporation and the plasma generation is realized by a glow discharge.

All of these solutions require additional and auxiliary devices for plasma generation, which generally have a disturbing effect in the vacuum chamber and additionally cause contamination by evaporating cathode material.

Verdampforquelle and plasma generator as a unit in the form of a Hohlkatodenbogenverdampfers for titanium evaporation are technically realized. As a second material source, one or more sputtering devices are proposed. Since these are DC sputtering devices, such devices can only be used to deposit a second metal component in the form of an alloy material, since sputtering devices of this form operate at low deposition rates. Real mixed-layer systems can not be produced in this way.

In addition, a considerable amount of metal vapor ions are emitted into the plasma chamber by the hollow cathode arc evaporator, which are extremely disadvantageous as sputtering ions. In particular, they prevent the defined controllability of the deposition process with respect to the layer composition.

Object of the invention

The aim of the invention is to enable the deposition of hard material layer systems in high quality with little technological effort.

Explanation of the essence of the invention

The object of the invention is to realize an apparatus for the plasma-assisted deposition of hard material layer systems, with the aid of which only one plasma generator is used to deposit adhering hard coatings based on titanium, boron, aluminum and nitrogen in defined composition on any substrates.

According to the invention the object is achieved by a vacuum chamber separated and independently controlled an arc discharge evaporator for titanium and an electron beam evaporator for boron or aluminum in the homogeneous region of a plasma with an ion density of (10 ⁹ -10 ¹⁰ ) ions / cm ³ are arranged. The arc discharge plasma extends over the entire space of the vacuum chamber and is approximately homogeneous throughout the substrate area. The plasma consists of an argon-nitrogen mixture which is available as a reactive gas at the same time as the plasma-assisted coating. The arc discharge evaporator is used for titanium evaporation, with most of the titanium ionized present. The second source of evaporation is an electron beam evaporator for evaporation of boron or alunimium. By means of a simple, lying at ground potential shield, which are at high voltage parts of the electron beam evaporator separated from the plasma space, so that both evaporators can work with existing plasma.

While both Vordampfortlogol quasi Maopotontlol bosltzon, lolgt to the substrates olno variablo nogativo tension to

Both gas ions and ionone may be used by the composites in order to protect them and thus plosmagostützto

Schlchtabscholdung to roollsloron. By the gotronnte Rogolung of both vaporizers, the vapor deposition of titanium, boron and / or aluminum can

has been varied. It may have been set to eolcho modes that ontwodor only titanium nitride, only boron nitride, only

Aluminum nitride or mixed blinds deposited wordon. The power dos Hohlkatodenbogonvordampfers can be sowoit roduzloron that oszu kölner essential Titanvordampfung,

Despite plasma generation In the entire Bochts reverence comes.

In this mode of operation, except for the cleaning of the substrate by bombardment with argon ions, it may be wordon.

By previously designated shielding the Elektrononstrahlverdampfor in Druckborelch (ΚΓ'-ΚΓ ² Pa) operated stably

Service.

embodiment The invention is explained below on the basis of the exemplary embodiment. 1 shows the basic structure of

according to the invention device.

At the bottom of the vacuum chamber 1 are a Elektronenstrahlverdampfor 2 and a Hohlkatodenbogenvordampfer, consisting of Anode 3 and hollow cathode 4, arranged side by side. A lying on Massopotontlal shield 11 surrounds the Electron beam evaporator 2 and separates it from the Pldsmaboroich. The pivoting Blonde 6 prevents premature boring Bedampfon the substrates 12. The isolated and rotatably arranged on the two pre-evaporation sources Substratnt take 9

consists of three Kroisschelben rotatable around its center axis, on which the substrates to be coated 9, in

In our example indexable inserts made of carbide HG 123, are located. About the gas inlet 6 is a defined

Reaktivgasdurchsatz goregelt, the influx of inort gas via the hollow cathode. 4 By means of the power supply device 7, the arc discharge between hollow cathode 3 and anode 4 is ignited and

regulated. The negative potential for the Substrataufnahmo can optionally by the power supply device 7 or an external device 10 has been realized.

Regardless of the dio power supply device 8 is used to operate the electron beam evaporator. In the example, the device according to the invention for producing a titanium-boron nitride layer system Indexable inserts made of carbide HG 123 used. During the ion etching of the substrates 12, wherein the negative bias voltage is continuously controlled to 600 V, takes place

preheating the already premelted boron in the crucible of the electron beam evaporator 2 up to a power of

2.5kW. The hollow cathode arc pre-damper burns at this time with a power of 3kW. The

Evaporation rate of titanium is negligible at this power. After completion of the Cleaning process, the Hohlkatodenentladungsverdampfer to 1OkW and the electron beam evaporator 2 on

4kW separately up-regulated. At the same time, inert gas (argon) is injected via the gas inlet system 5 into the reactive gas (nitrogen).

admixed. During the coating process, a working pressure of 2 × 10 ^-1 Pa prevails in the recipient 1.

(The vapor deposition rate for boron is 0.4 nm / s, for titanium 2 nm / s).

The carbide indexable inserts are located on the rotating substrate holder 9. The mean distance between the substrates

of the evaporators is 50cm.

The titanium boron nitride layer deposited by the device during a coating time of 30 minutes has a Layer thickness of about 1 pm and has a hardness of H »40GPa with good adhesion.

Claims (4)

1. An apparatus for plasuinagestützten Abscholdung of hard material coating systems, in particular Misch- or Mohrfochschlchton mlttols evaporation, characterized in that in a vacuum chamber (1) separated and independently controllable, a Bogonentladungsverdampfer (3,4) for titanium and an electron beam evaporator (2) for boron and aluminum in the homogeneous atmosphere of a nitrogen-argon plasma and the substrate receptacle (9) are arranged in the region of a constant ion power of 19 ⁹ -10 ¹⁰ l / cm ³ . 2. Apparatus according to claim 1, characterized in that the electron beam evaporator (2) by means of a shield (11) is grounded with ground potential from the plasma region. 3. Apparatus according to claim 1 and 2, characterized in that the substrates (12) have a variable negative bias. 4. Apparatus according to claim 1 to 3, characterized in that the arc discharge evaporator consists of hollow cathode (4) and anode (3).