DD265256A1 - SUBSTRATE DISC HOLDER FOR THE DEPOSITION OF THICK CV-LAYERS - Google Patents

Abstract

The invention relates to a substrate wafer holder for depositing thick CV layers, for example for electronic components to be produced in VDI technologies, which prevent ingrowth of the substrate wafer with the substrate wafer holder during the formation of the crystalline layer. For this purpose, it is necessary to effectively minimize the effect of the decomposition reaction of the layer source substance in the transition region of the substrate wafer edge zone substrate wafer holder. This is achieved by a nutenfoermige recess in the active surface side of the substrate wafer holder, which runs substantially along the edge region of the substrate wafer and is at least partially surmounted by this.

Description

- / - 265 25b

Ausführungtbelspiel

The invention will be explained in more detail with reference to an exemplary embodiment. The figure with the associated sectional image shows the design according to the invention of a part of the active surface of the substrate wafer holder acting as a heater for depositing thick CVD layers. The Substratscheibenhaiterung 1 has on its active surface 2 a groove-shaped recess 3, whose diameter R corresponds to the diameter r of Γ bstratscheibe 4 to be coated. The annular groove 3 introduced into the active surface 2 of the substrate wafer holder 1 has an inner diameter R which is smaller than the diameter r of the substrate wafer 4 to be coated. The difference between the diameter r of the substrate wafer * to be coated and the inner diameter R of the annular one In this case, the groove is approximately twice the layer thickness to be applied to the substrate wafer 4. The outer diameter R "of the annular groove 3 is up to * four times the thickness of the applied to the substrate wafer 4 layer greater than the diameter r of the substrate to be coated disc 4. The depth of kreisrihgförmigen groove 3 has about twice the amount of thickness on the In the active surface 2 of the substrate holder 1, groove-shaped recesses 3 can be introduced for any desired substrate disk shape, which correspond in the manner set out to the edge regions of the substrate disk 1. The groove-shaped recess 3 in the active surface 2 the Substratscheibenhaiterung acting as a heater 1 ensures a certain temperature inhomogeneity for the Randboreich the semiconductor substrate wafer 4 in such a way that the Randbereich.eine a slightly lower temperature than the resting on the Substratscheibenhaiterung 1 surface of the substrate wafer By means of the introduced groove-shaped recess 3, a temperature gradient arises in the transition zone of the semiconductor substrate wafer for substrate wafer retention, which excludes as far as possible the decomposition reaction of the layer source substance and thus a layer deposition in this area. D.'e formation of a relatively strong adhesion between the substrate wafer holder 1 and substrate wafer 4 is thus excluded.

Claims (2)

1. substrate wafer holder for depositing thick CV layers, which serves to receive semiconductor substrates on the active surface side of the substrate wafer holder, characterized in that the active surface side of the substrate wafer holder along the edge region of the resting semiconductor substrate disc has a groove-shaped recess which extends beyond the edge region of the semiconductor substrate wafer partially becomes. 2. Holder according to item 1, characterized in that fixing elements are arranged for the substrate discs. For this 1 page drawing Field of application of the invention The invention relates to a substrate wafer holder for chemical vapor deposition (CV) of crystalline layers for electronic components to be produced, for example, in VDI technologies. Characteristic of the named software solutions For the deposition of crystalline layers on semiconductor substrates, a number of devices are known which serve to receive substrate wafers during CVD coating. These substrate wafer holders, serving as heaters for the substrate disks, consist of electrically conductive material with high chemical resistance, preferably of ultrapure graphite, and are arranged in a nonconductive reaction tube, preferably made of quartz glass, and, by their arrangement, inter alia. in the field of a high-frequency induction heater to a suitable temperature, which passes through various mechanisms such as heat conduction, convective heat transfer through the gas and heat radiation, proportionately on the Substratcneiben. If the substrate disks have the appropriate temperature, the decomposition of the layer source substance takes place on its free surface, together with the deposition of a crystalline growth layer. In order to limit crystal lattice distorts and distortions of the substrate slices to be coated, the design of the space between the substrate wafer and the substrate wafer carrier is receiving increasing attention. In this case, planar supports exist, on which the substrate disc rests with the surface not to be coated, wherein these flat support surfaces can also be embedded in the surface of the substrate carrier. However, recess-like recesses are also known in the substrate disk carrier material, which are arranged downstream of the surface not to be coated for the purpose of disk temperature homogenization. This is intended to prevent the occurrence of growth disturbances and the discarding of the substrate wafers, which can form locally different thermal contacts between substrate wafer carrier and substrate wafer. Also known are vertical substrate wafer holders in which additional tools for fixing the substrate disks are required. In the production of crystalline layers having a layer thickness in the region of the substrate wafer thickness, in such substrate wafer holders, adhesion takes place with the edge of the substrate wafer through the layer deposited on the substrate wafer surface and the crystalline material deposited on the graphite heater serving as substrate wafer holder. The masking of the source gas flow by arranging appropriate mechanical means in the Raaktioncraum leads to layer to be formed with a layer thickness <500 pm to no effective prevention of the growth of substrate wafer and substrate wafer holder. A replacement of the thus coated substrate wafer from the substrate wafer holder for the purpose of further processing leads in most cases to the destruction of the coated semiconductor substrate wafer. Object of the invention The aim of the invention is to provide a Substratscheibenhaltorung for the deposition of thick CV layers which prevents ingrowth of the substrate wafer with the substrate wafer holder in the CVD process. Explanation of the essence of the invention The invention is based on the object of providing a substrate wafer holder for depositing thick CV layers, which effectivelyiminates the decomposition reaction in the transition region substrate substrate edge zone substrate wafer holder. This object is achieved by the substrate wafer holder for chemical vapor phase deposition of thick crystalline layers, which serves to receive semiconductor substrates on the active surface side of the substrate wafer holder, according to the invention that the active graphite heater surface of the substrate wafer holder along the edge region of the resting semiconductor substrate wafer has a groove-shaped recess which from the edge region the semiconductor substrate wafer is partially surmounted. The invention is advantageously configured in that fixing elements are provided for the substrate wafers, which fix the position of the substrate wafer in the case of partial transfer of the inner edge region of the groove.