DD148395A2 - METHOD OF APPLICATION ALPHA-AL DEEP 2 O LOW 3-DAY LAYERS FOR ELECTRONIC COMPONENTS - Google Patents

Abstract

The aim of the invention is to produce flexible, but stable, adherent and low-pore layers, which furthermore have a high dielectric constant and low dielectric losses, whereby according to the invention application WP 142 360 Alpha-Al & ind 2! O & ind 3! -containing layers are to be used on aluminum metals. The object of the invention is to find a method for the application of such layers, wherein the effort for their production should be reduced. Erfindungsgemaesz an alpha-Al & ind 2! O & ind 3! -Containing, low-pored and molten layer gemaesz invention application WP 142 360 as a dielectric for a capacitor with aluminum electrodes applied. Expediently, the melting of the dielectric layer is carried out by conventional methods, by plasma oxidation or by anodic spark oxidation. In an embodiment of the invention, capacitors of all possible variants are affected by the use of the alpha-Al & ind 2! O & ind 3! -Containing dielectric layers. The invention finds particular application in the manufacture of plate, stack and wound capacitors application.

Description

-4- 218 107

Prof. Dr. se. nat. Günter Marx

Prof. Dr. rer. nat. habil. Helmut Günther Schneider rer. nat. Peter Short

Waldemar Kryemann

Dr. rer. nat. Lothar Michalowsky P 716

Dr.rer. nat. Herbert Bartuch Int. Cl .: H01G, 4/10

Peter Baumann 18. 12. 1979

Title of the invention

Method for applying tronic components

Method of Application <^ - Al _? 0 -containing layers for electrical

A field of application of the invention

The invention relates to a method for the production of oC -AlpO -Hiitigen layers on aluminum according to the invention application WP C25D / 'AWdGO and relates to the application of these layers for electronic components that require layers of these properties.

Characteristic of known technical solutions

It is known to use the valve metals, e.g. Also aluminum, both in. Compact as well as in foil form u.a. to use as materials for capacitor electrodes. The property of these materials, the intrinsic dielectrically effective

9 7 Π Π in η, η ο ^ r ^ ,,

Layers used, used (DE-PS 388 626). However, these ₂₃ layers show a porous structure. In order to recompress or close the pores, an additional expense is necessary in the technological process of producing the capacitors.

Various materials and methods have heretofore been used (DE-746 584, DE 889 807, DE-898 479). By all these methods, it is not possible to completely close the pores or it is not excluded that narrower pores are still retained ·

When using barrier layer-forming electrolytes, e.g. of boric acid, (DE-AS 1 225 296) in generating the dielectric (oxide) is indeed achieved relatively non-porous, but only very thin, mechanically and electrically not very resistant layers, dj.e also show an extremely low growth rate and very high electrical Require voltages during manufacture.

It is also known to use several, in particular two aluminum oxide layers as the dielectric of a capacitor. In this case, a dense, but thin and a porous, but thicker oxide layer is present (DE-AS 1 225 296).

However, since the capacitance of a capacitor is inversely proportional to the thickness of its dielectric, no high capacity yield is achieved.

As described in DE-AS 1 225 762, it has also been attempted, instead of an additional dielectric layer in the pores of the oxide layer to introduce dyes and inorganic pigments or sulfur by chemical or electrochemical means. Thereafter, however, it is necessary to completely remove the liquids used in these methods again. It is thus achieved no significant improvement of the capacitor.

Object of the invention "

It is an object of the invention, thin, flexible, but stable, adherent and low-pore layers, which also have a high dielectric constant and low dielectric losses to produce, according to the invention application WP "025DAi ¹ Kl, 360 oC -AIpO ₃ -haItige layers on aluminum metals to be used.

Presentation of the essence of the invention

The object of the invention is to find a method for using o ^ -AlpCL-containing layers for electronic components, wherein the cost of their production is reduced and the object of the invention is achieved.

According to the invention, this object is achieved in that the pertinent, low-pore and molten layer is used as a dielectric for a capacitor with aluminum electrodes.

Expediently, the melting of the dielectric layer is saturated by conventional methods, in particular by thermal treatment, or by plasma oxidation or by anodic spark oxidation.

In an embodiment of the invention according to the invention capacitors of all possible variants, in particular those of a plate capacitor, a stacked capacitor and a wound capacitor produced using one or more of the previously known ways of attaching and arranging the electrical connections rule and the production of electrode pads or electrodes itself applied.

Ausführungsbeis piol

The invention will be described below with reference to an embodiment.

The oC -AlpO ^ -containing layer on an aluminum metal is prepared as described in the invention application WP 025DzM ¹ W 3 60 described.

According to the invention, several manufacturing possibilities, such as e.g. the plasma oxidation and the conventional methods, in particular the thermal treatment applicable.

The produced o £ -Al _? 0 "-containing layer, which according to the invention is used as a dielectric for a capacitor, can therefore be melted on the electrodes of the capacitor according to the said methods.

For the preparation of the different capacitor variants, some explanations are given here.

To produce a wound capacitor, an aluminum foil strip is covered on one side by anodic spark oxidation with a molten ° 6 -Al ₂ O-containing layer. Then, two films thus produced are wound so that the oxide layers are sandwiched between the aluminum foils and on the outer surface of the coil. "Corresponding electrical connections are made in a known manner.""The winding capacitor is also made using a multilayer technology, one-sided This layer of aluminum is then oxidized by one of the methods mentioned above and the aluminum oxide layer is subsequently re-evaporated with aluminum The method can be determined in this manner.

Furthermore, the production of a high voltage stacked capacitor will be described here.

The capacitor plates (aluminum plates) are stacked at a distance. This is followed by anodic oxidation with spark discharge for the entire plate complex. The electrical connections are made in a known manner. When using anodic spark oxidation, depending on the electrolyte used, on the electrical voltage and the temperature oL -Al _? 0 -containing layers with corresponding layer thicknesses obtained.

218 107

The layer thus produced, when used as a dielectric for a capacitor, is distinguished by its flexibility, stability, its high adhesive strength to the substrate and by the fact that it is low in pores, that is to say that less

5 2

There are no fillers for closing or recompressing

11 -2 greater density (10 cm) of pores more necessary. The technological effort to produce a capacitor is thereby reduced.

The aC -AIpO-containing layer is further characterized by a high dielectric constant, by low dielectric losses. The capacitors produced in this way achieve a high capacity yield and dielectric strength.

The conditions for layer production mentioned in the invention application WP C25d / ^/ I ^/ <-2 / 360 can, of course, be modified in order to achieve corresponding electrical parameters in the capacitors.

Claims (3)

- 218 107 Erfindungsansprueh 1. A method for application q6 -AI ₂ CL-haItiger layers for electronic components, wherein the alumina layer is applied on aluminum metals according to the invention application WP 0250/142, 3 0, characterized in that the «^ -A IPCL-ha It strength, low porosity and molten layer is applied as a dielectric for a capacitor with aluminum electrodes. 2. The method according to item 1, characterized in that the melting of the dielectric layer by conventional methods, in particular by thermal treatment, or by plasma oxidation, or by anodic Punkenoxydation is completed. 3. The method according to item 1, characterized in that capacitors of all possible variants, in particular those of a plate capacitor, a stacked capacitor and a wound capacitor are produced, wherein one or more of the previously known types of attaching and arranging the electrical connections and the production of the electrode pads or of the electrodes themselves.