DD108213A1 - - Google Patents
Info
- Publication number
- DD108213A1 DD108213A1 DD168732A DD16873273A DD108213A1 DD 108213 A1 DD108213 A1 DD 108213A1 DD 168732 A DD168732 A DD 168732A DD 16873273 A DD16873273 A DD 16873273A DD 108213 A1 DD108213 A1 DD 108213A1
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
- H10H20/8262—Materials of the light-emitting regions comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1742653A SU430797A1 (ru) | 1972-02-08 | 1972-02-08 | Способ создани диодного источника света на карбиде кремни |
| SU1795129 | 1972-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD108213A1 true DD108213A1 (cg-RX-API-DMAC10.html) | 1974-09-12 |
Family
ID=26665454
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD168732A DD108213A1 (cg-RX-API-DMAC10.html) | 1972-02-08 | 1973-02-06 | |
| DD178909*A DD116733A1 (cg-RX-API-DMAC10.html) | 1972-02-08 | 1973-02-06 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD178909*A DD116733A1 (cg-RX-API-DMAC10.html) | 1972-02-08 | 1973-02-06 |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA996845A (cg-RX-API-DMAC10.html) |
| DD (2) | DD108213A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2171184B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1423037A (cg-RX-API-DMAC10.html) |
| IT (1) | IT977246B (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633051A (en) * | 1983-11-23 | 1986-12-30 | Advanced Semiconductor Materials America, Inc. | Stable conductive elements for direct exposure to reactive environments |
| CN107974712A (zh) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | 一种半绝缘碳化硅单晶的制备方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1268952A (fr) * | 1959-10-08 | 1961-08-04 | Wacker Chemie Gmbh | Procédé de fabrication de carbures, nitrures et borures cristallins de grande pureté |
| DE1802350C3 (de) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Elektrolumineszente Halbleiterdiode |
-
1973
- 1973-02-01 GB GB510373A patent/GB1423037A/en not_active Expired
- 1973-02-06 FR FR7304133A patent/FR2171184B1/fr not_active Expired
- 1973-02-06 CA CA163,038A patent/CA996845A/en not_active Expired
- 1973-02-06 DD DD168732A patent/DD108213A1/xx unknown
- 1973-02-06 DD DD178909*A patent/DD116733A1/xx unknown
- 1973-02-07 IT IT48117/73A patent/IT977246B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT977246B (it) | 1974-09-10 |
| DD116733A1 (cg-RX-API-DMAC10.html) | 1975-12-05 |
| GB1423037A (en) | 1976-01-28 |
| DE2305544A1 (de) | 1973-10-11 |
| DE2305544B2 (de) | 1975-09-18 |
| CA996845A (en) | 1976-09-14 |
| FR2171184B1 (cg-RX-API-DMAC10.html) | 1979-05-04 |
| FR2171184A1 (cg-RX-API-DMAC10.html) | 1973-09-21 |