CS485183A2 - Polovodicovy prvek s tlacnym kontaktem - Google Patents
Polovodicovy prvek s tlacnym kontaktemInfo
- Publication number
- CS485183A2 CS485183A2 CS834851A CS485183A CS485183A2 CS 485183 A2 CS485183 A2 CS 485183A2 CS 834851 A CS834851 A CS 834851A CS 485183 A CS485183 A CS 485183A CS 485183 A2 CS485183 A2 CS 485183A2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- tlacnym
- prvek
- polovodicovy
- kontaktem
- tlacnym kontaktem
- Prior art date
Links
Classifications
-
- H10W76/138—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H10W20/484—
-
- H10W72/00—
-
- H10W72/30—
-
- H10W72/073—
-
- H10W72/07337—
-
- H10W90/756—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112975A JPS594033A (ja) | 1982-06-30 | 1982-06-30 | 圧接型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS485183A2 true CS485183A2 (en) | 1985-08-15 |
| CS244676B2 CS244676B2 (en) | 1986-08-14 |
Family
ID=14600244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS834851A CS244676B2 (en) | 1982-06-30 | 1983-06-29 | Semiconductor element with press contact |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0098175A3 (cs) |
| JP (1) | JPS594033A (cs) |
| CS (1) | CS244676B2 (cs) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
| EP0355359B1 (de) * | 1988-08-19 | 1993-03-17 | Asea Brown Boveri Ag | Abschaltbares Halbleiterbauelement |
| JP2739970B2 (ja) * | 1988-10-19 | 1998-04-15 | 株式会社東芝 | 圧接型半導体装置 |
| DE58905844D1 (de) * | 1989-02-02 | 1993-11-11 | Asea Brown Boveri | Druckkontaktiertes Halbleiterbauelement. |
| JP2502386B2 (ja) * | 1989-04-11 | 1996-05-29 | 富士電機株式会社 | 半導体装置 |
| JPH0680818B2 (ja) * | 1989-10-02 | 1994-10-12 | 株式会社東芝 | 電力用圧接型半導体装置 |
| EP0597514B1 (en) * | 1992-11-09 | 1997-08-06 | Delco Electronics Corporation | Vertical PNP semiconductor device |
| US7675903B2 (en) | 2004-02-06 | 2010-03-09 | Alcatel Lucent | Dynamic contact list management system and method |
| CN118737943B (zh) * | 2024-06-28 | 2025-05-27 | 北京怀柔实验室 | 用于晶圆键合的键合夹具及采用其的键合设备和方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4035831A (en) * | 1975-04-17 | 1977-07-12 | Agency Of Industrial Science & Technology | Radial emitter pressure contact type semiconductor devices |
| DE2757821C3 (de) * | 1976-12-28 | 1982-08-19 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | Verfahren zur Herstellung einer Mesa-Halbleiteranordnung mit Druckkontakt |
| FR2378354A1 (fr) * | 1977-01-19 | 1978-08-18 | Alsthom Atlantique | Procede de fabrication de semiconducteurs de puissance a contacts presses |
| DE2902224A1 (de) * | 1979-01-20 | 1980-07-24 | Bbc Brown Boveri & Cie | Kontaktsystem fuer leistungs-halbleiterbauelemente |
| JPS57201077A (en) * | 1981-06-05 | 1982-12-09 | Hitachi Ltd | Semiconductor switching device |
-
1982
- 1982-06-30 JP JP57112975A patent/JPS594033A/ja active Granted
-
1983
- 1983-06-29 CS CS834851A patent/CS244676B2/cs unknown
- 1983-06-30 EP EP19830303809 patent/EP0098175A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0142498B2 (cs) | 1989-09-13 |
| CS244676B2 (en) | 1986-08-14 |
| EP0098175A2 (en) | 1984-01-11 |
| JPS594033A (ja) | 1984-01-10 |
| EP0098175A3 (en) | 1985-10-23 |
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