CS276342B6 - Method of elemental microanalysis of layered structures - Google Patents

Abstract

The use of changes in the conditions of microanalysis of characteristic X-ray radiation in a scanning electron microscope to obtain information about the elemental distribution of inhomogeneous layered structures. This is determined at a depth of 0.5 .um, at a scanning angle of up to 30°, with a sample tilt of over 45° and an accelerating voltage of up to twice the excitation energy of the element. The microanalysis method can be used wherever it is necessary to determine the depth distribution of elements of layered structures in the depth interval of 1 nm to 0.5 .um from the surface.

Description

The invention relates to a method of elemental microanalysis of layered structures.

From the change of microanalysis conditions by characteristic X-ray radiation on the scanning electron microscope, information about the elemental distribution of inhomogeneous layer structures is obtained.

In particular, chemical and physical procedures involving the analysis of thin surface areas for the gradual removal of surface layers are used to obtain information about the depth distribution of elements in solids. A common drawback of these methods is their destructive nature of removing the analyzed area. The use of perpendicular, respectively. oblique cuts of layered material are bound to the use of local microanalysis of a very small analyzed volume.

These disadvantages are eliminated by using elemental microanalysis of layered structures to obtain information about the depth distribution of elements in the non-uniform layered structures of the invention.

Its essence is a method of elemental microanalysis of stratified structures in which a depth distribution of elements of layered structures at depths up to 0.5 yum is found at a scanning angle of up to 30 °, at a tilt of the sample up to 45 ° and an accelerating energy of the electron beam up to twice the excitation energy of the observed element.

Thus, a change in the geometrical conditions and energy of the primary electrons is used in microanalysis. When changing the accelerating voltage of the primary electron, the beam, the angle of impact of the primary electrons and the scanning angle of the emitted X-ray radiation, the intensity of the sensed X-ray radiation of the monitored elements is changed in a regular way. From the nature of these changes it may be thought: to distribute the elements to be monitored from the surface of the solids to the inside of the sample, especially in the 1 nm & Example

The scanning electron microscope Tesla 0-300 and the EDX analyzer EDAX 3100/60 measured the dependence of the intensity of the radiation emitted from the surface of the steel sample, IV, v, with the ion-implanted phosphorus. 10-ion / cnT dose from electron beam acceleration voltage in the range of 7 to 20 kV, at beam current 6.5. 10 Λ. At a constant acceleration voltage of 12 kV, the angular dependence of the radiation intensity was measured.

Changing the scanning angle of emitted radiation was achieved by rotating the sample around the vertical axis. The angle between the plane of the sample and the axis of rotation was identical to the elevation angle of the detector (in this case 35 °). A phosphorus concentration gradient of 0.3 µm from the sample surface was determined in this way.

This method of analysis of the invention can be utilized wherever the depth distribution of the elements detectable by the method used has to be determined in a non-destructive manner. The possibility of continuously changing the scanning angle of the emitted X-ray radiation is used, although the radiation detector is fixed in the electron microscope.

Claims (1)

PATENT Method of elemental microanalysis of stratified structures for non-destructive detection of elemental distribution of non-homogeneous stratified structures by changing geometric conditions and energy, characterized in that the in-depth distribution of elements is detected in depth 0.5 yum at a scanning angle of up to 30 °, a sample tilting up to 45 ° and an accelerating-electron beam voltage up to twice the element's excitation energy.