CS264840B1 - Etching magnetron - Google Patents

Abstract

The purpose of the solution is the construction of an etching magnetron, which is intended for placement inside a vacuum chamber and does not require modification of the vacuum apparatus during assembly. The stated purpose is achieved by the cathode of the etching magnetron having the shape of a prism, on the bases of which pole pieces are placed and inside which a magnetic circuit is placed. The arrangement of the magnetic circuit is chosen so that the magnetic induction lines of force are parallel to one wall, or to several walls of the cathode, while a sample with an etched layer is placed on this wall separately or on a pad holder. The etching magnetron according to the solution allows the shaping of insulating, semiconductor and metal layers by etching through suitable masks. It provides a higher etching speed than the currently most widespread method of reactive ion etching. For example, By magnetron etching, it is possible to increase the etching rate of SiO2 in CHF3 plasma to 1.1,/im/min at a selective SiO2/Si ratio of - 9.5 compared to the rate of 22 nm/min when using the reactive ion etching method. Since the etching magnetron according to the invention can be placed in the same chamber as the sample, it can form a suitable addition to the experimental vacuum apparatus for sputtering layers, where it allows for cleaning the sample surface before layer deposition or etching it during deposition in order to obtain layers with special properties.

Description

264840 2

BACKGROUND OF THE INVENTION The present invention relates to an etching ntagnetron in which a vacuum chamber location, a magnetron structure, and a sample feed into a magnesite workspace are addressed.

Previously developed etching magnetrons, used to form layers for microelectronic applications, have a separate magnetic circuit from the sample primer. The self-assembly of the etching magnetron is in the auxiliary vacuum chamber, which is pumped, for example, by a diffuser and separated from the working chamber by a thin non-magnetic sheet. The magnetric is mechanically moved in this space, and its working magnetic field penetrates through the diaphragms into the working chamber, where it operates at a pressure of 0.1 to 10 Pa to ignite the anomalous fluid and etch the layer on the sample. The sample is placed on the separating plate from the barrel side of the chamber. Therefore, the overall structure of the chamber is complex, requiring separate pumping, mechanically sweeping magnetic circuitry, and does not solve the displacement of the specimen after the etching operation has ended. Another used etching magnetron structure is placed on the wall of the vacuum chamber and the sample passes through the magnetron discharge located on the pallet. A drawback of such a construction is that the welder apparatus must include a flange for attaching the magnetron, and the apparatus cannot be positioned in a vacuum chamber for etching the layer during layer deposition.

The aforementioned drawbacks are eliminated by the etching magnetron according to the invention, which is located inside the vacuum chamber, the principle of which is that the magnetron cathode is in the form of a prism, on which the pole pieces are located, and inside a magnetic circuit. The arrangement of the magnetic circuit is selected such that the silicaramagnetic induction hurts parallel to one side or several sides of the cathode. The cathode with which the magnetic induction lines are parallel or parallel to the cathode cathode is provided with an etched layer washer separate or on a substrate holder. An advantage of the etching magnetron according to the invention is that the magnetron does not require special flanges for positioning inside the vacuum chamber, because it is fixed by means of two bushings - water and electrical bushing, or by one combined water-electric passage. Another advantage is that it does not require a separately pumped vacuum space for operation, the etching magnetron is located in the same vacuum chamber as the sample, is structurally simple, does not contain a crushed magnetic circuit, nor does the etching magnetron itself move mechanically, and relative motion between the etching magnetron and the specimen it provides a specimen holder, the specimen can be attached to the specimen, and the specimen passes through the progressive discharge of the etching magnetron.

In the accompanying drawing, FIG. 1 shows a simplified embodiment of the embodiment of etchinghomagnetron according to the invention.

The etching magnetron is located inside the vacuum chamber 1. The overall magnetron assembly consists of the cathode body 5 itself and the combined water-electric vacuum grommet 10, which provides the position of the magnetron inside the vacuum chamber via the supply tubes. The magnetron magnetic circuit is formed by a permanent magnet assembly inserted into the cathode 5. The pole pieces 8 which provide the desired magnetic pole shape are detachably attached to the cathode, and can be changed according to the shape of the etching zone. The cathode body has a 4-sided prism shape. In this construction, the magnetic induction field lines 7 are parallel to each cathode wall. Therefore, the magnetron discharge ří burns over all the cathode walls, and samples 2 are transferred thereto during etching. The sample may be placed on the stenukatodes or displaced by the sample holder 2. When relocating the specimen holder when the specimen passes at the cathode played, the discharge goes out, but when placed in front of the full-wall cathode J5, the discharge i resists and causes etching of the specimen surface 2 ·

The etching magnetron according to the invention allows the formation of insulating, semiconductor and metal layers by etching through suitable masks. It provides a higher etching rate than currently the most widespread reactive ion etching method. E.g. by magnetron etching it is possible to increase the etching rate of SiO2 in plasma CHF3 to 1.1 µm / min at a selective ratio

SiO2 / Si - 9.5 vs. 22 nm / min using a reactive ion etching method.

Claims (1)

OBJECT OF THE INVENTION An etching magnetron located inside a vacuum chamber, characterized in that the magnetron cathode (5) has a prism shape on the base of which the pole pieces (8) are located and inside which a magnetic circuit (6) having magnetic field induction lines is located. (7) parallel to one or more narrow prism walls, wherein a sample (3) with an etched layer is placed on the cathode wall (5) with which the magnetic induction field lines (7) are parallel or parallel to the cathode wall (5) separate or on the sample holder (2).