CS258708B1 - Method of crystallographical failures visibilization in in 1-x ga x as 1-y p y indium galum arsenide phosphide - Google Patents
Method of crystallographical failures visibilization in in 1-x ga x as 1-y p y indium galum arsenide phosphide Download PDFInfo
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- CS258708B1 CS258708B1 CS862978A CS297886A CS258708B1 CS 258708 B1 CS258708 B1 CS 258708B1 CS 862978 A CS862978 A CS 862978A CS 297886 A CS297886 A CS 297886A CS 258708 B1 CS258708 B1 CS 258708B1
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- Prior art keywords
- indium
- solution
- potassium
- arsenide phosphide
- crystallographic
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 8
- 229910052738 indium Inorganic materials 0.000 title abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 6
- 238000003486 chemical etching Methods 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000000276 potassium ferrocyanide Substances 0.000 claims description 3
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- -1 potassium ferricyanide Chemical compound 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 5
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- AWDBHOZBRXWRKS-UHFFFAOYSA-N tetrapotassium;iron(6+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+6].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] AWDBHOZBRXWRKS-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Riešenie sa týká sposobu zviditeíňovania kryštalografických porúch v indiumgaliumarzenidfosfide In^.GaxAsi-yPy orientácie (001) chemickým leptáním. Podstatou riešenia je, že na indiumgaliumarzenidfosfid Ini_xGaxAsj-yPy, kde 0,25 < x < 0,33 a 0,55 < < y < 0,73 sa pósobí zmesou hydroxidu draselného vo formě 15 %-ného roztoku a hexakyanoželezitanu draselného vo formě 15 %- -ného roztoku zmiešaných v hmotnostnom pomere 2 : 1 až 1 : 2, pri teplote 15 až 50 stupňov Celzia, po dobu 1 až 5 minút za intenzívneho miešania. Uvedený spósob je možné využiť na zisťovanie vhodnosti materiálu pre výrobu optoelektronických prvkov.The solution concerns the way of visibility crystallographic disorders in indium gallium arzenidphosphide In ^ .GaxAsi-yPy orientation (001) chemical etching. The essence of the solution is that of indium galiumarzenidphosphide Ini_xGaxAsj-yPy, where 0.25 x x 0,3 0.33 and 0.55. < 0.73 is treated with a potassium hydroxide mixture in the form of a 15% solution and ferricyanide potassium in the form of 15% - % solution mixed in weight a ratio of 2: 1 to 1: 2, at a temperature of 15 to 50 degrees Celsius, for 1 to 5 minutes for intense stirring. That way is can be used to determine the suitability of the material for the production of optoelectronic elements.
Description
Vynález sa týká sposobu zviditelňovania krystalografických porúch v indiumgáliumarzenidfosfide orientácie (001). Zlúčeniny typu indiumgáliumarzenidfosfidu Ini_ OaxAst-yP, kde 0 s x á 0,47 a 0 í y š 1,0 sú vhodné na přípravu optoelektronických prvkov ako například elektroluminiscenčných diód, laserov, fotodiód pracujúcich v oblasti vlnových dížok nad 1,0 μπι.The invention relates to a method of visualizing crystallographic disorders in indium-gallium-phosphide orientation (001). Compounds of the indium-aluminum-arsenide phosphide type Ini-OaxAst-γP, where 0 s x 0,4 0.47 and í š 1.0 are suitable for the preparation of optoelectronic elements such as electroluminescent diodes, lasers, photodiodes operating in the wavelength range above 1.0 µπι.
Krystalografické poruchy v materiáli spósobujú elektrická degradáciu týchto prvkov, preto je snaha tieto poruchy pri raste kryštálov obmedziť. Jednou z metod na identifikáciu porúch je chemické leptanie. Pre kryštalografickú orientáciu (001) nie je doteraz známe leptadlo, ktoré by zviditelňovalo poruchy pre n- aj p-typ indiumgáliumarzenidfosfidu.The crystallographic disturbances in the material cause electrical degradation of these elements, therefore, the disturbance of the crystal growth is an attempt. Chemical etching is one of the methods for identifying disorders. For the crystallographic orientation (001), there is no known etching agent that would visualize disturbances for both n- and β-type indium gallium arsenide phosphide.
Z literatúry je známe leptadlo so zložením 100 ml vody, 8 g hydroxidu draselného KOH a 0,5 g hexakynoželezitanu draselného K3Fe(CN)6, ktoré pri fotoleptaní odhaluje krystalografické poruchy na n-type indiumgáliumarzenidfosfide. Na p-type sa týmto leptadlom nepodařilo poruchy zviditel'niť.There is known in the literature an etching composition of 100 ml of water, 8 g of potassium hydroxide KOH and 0.5 g of potassium hexacyanoferrate (K 3 Fe (CN) 6 ), which reveals crystallographic disturbances on n-type indium-magnesium arsenide phosphide when photo-etched. On the p-type, this etch failed to visualize the disturbances.
Uvedený nedostatok je odstránený spósobom zviditel'ňovania krystalografických porúch v indiumgáliumarzenidfosfide orientácie (001) chemickým leptáním zmesou hydroxidu draselného a hexakyanoželezitanu draselného vo formě vodného roztoku, ktorého podstatou je, že na indiumgáliumarzenidfosfid In( _ :GaxAS| .yPv, kde 0,25 < x <The lack of a zviditel'ňovania Remove a crystallographic defects in indiumgáliumarzenidfosfide orientation (001) by chemical etching with a mixture of potassium hydroxide and potassium ferricyanide as an aqueous solution, which is characterized in that the indiumgáliumarzenidfosfid In (_: Ga x AS |. Y P in which 0.25 <x <
< 0,33 a 0,55 < y < 0,73 sa posobí pri tep-, lote 15 až 50 °C po dobu 1 až 5 min. za intenzívneho miešania zmesou pozostávajúcou z vodného roztoku s obsahom 15 % hmot. hydroxidu draselného a vodného roztoku s obsahom 15 % hmot. hexakyanoželezitanu draselného zmiešaných v hmotnostnom pomere 2 : 1 až 1 : 2.≪ 0.33 and 0.55 < γ < 0.73 are held at 15 to 50 ° C for 1 to 5 min. with vigorous stirring, a mixture consisting of an aqueous solution of 15% by weight. % potassium hydroxide and an aqueous solution containing 15 wt. potassium ferrocyanide mixed in a weight ratio of 2: 1 to 1: 2.
Výhodou spósobu zviditelňovania krystalografických porúch je, že leptáním v tomto roztoku sa zviditefňujú kryštálografické poruchy v n- aj p-type indiumgáliumarzenid7D8 fosfide pri teplote 15 až 50 °C za intenzívneho miešania a pri bežnom osvětlení miestnosti. Ďalšou výhodou je leptacia rýchlosť, ktorá dosahuje hodnoty řádové 0,1 μπι/ /min., a preto je možné nielen identifikovat poruchy na povrchu materiálu, ale aj sledovat ich pokračovanie a rozloženie v hlbke materiálu.An advantage of the method of visualizing crystallographic disturbances is that by etching in this solution, crystallographic disturbances in both n- and β-type indium-aluminum arsenide 7D8 phosphide are visible at 15 to 50 ° C with vigorous stirring and under normal room lighting. Another advantage is the etching rate, which reaches a value of the order of 0.1 μπι / / min, and therefore it is possible not only to identify defects on the surface of the material, but also to monitor their continuation and distribution in the depth of the material.
Příklad 1Example 1
Pomocou metody kvapalnej epitaxie bola na podložke z nidiumfosfidu InP narastená prisposobovacia vrstva indiumfosfidu InP n-typu a na nej vrstva zloženiaUsing the liquid epitaxy method, the n-type n-type indium-phosphide nip-type and N-type n-type phosphoric layer
Ino,72Gao,28Aso,38Po,G2 tiež n-typu hrůbky 3 μπι.Ino, 7 2 Gao, 28As o , 3 8 Po, G2 also n-type depths 3 μπι.
Leptáním zmesi roztokom zloženým z 30 gramov hydroxidu draselného v 200 ml vody a 30 g hexakyanoželezitanu draselného v 200 ml vody pri teplote 20 °C, za intenzívneho miešania sa za 4 min. na povrchu indiumgáliumarzenidfosfidu vyleptali jamky v miestach krystalografických porúch.Etching the mixture with a solution of 30 grams of potassium hydroxide in 200 ml of water and 30 g of potassium ferrocyanide in 200 ml of water at 20 ° C, with vigorous stirring for 4 min. wells etched on the surface of indium-aluminum arsenide phosphide at sites of crystallographic disorders.
Příklad 2Example 2
Metódou kvapalnej epitaxie bola na podložke z indiumfosfidu InP narastená prisposobovacia vrstva indiumfisfidu InP n-typu a na nej vrstva zloženia Inoj72Gao,28Aso,38Po,G2 p-typu dopovaná zinkom o hrúbke 4 μπι.The liquid epitaxy method was used to increase the indium phosphide InP n-type adaptation layer and the Ino j72 Gao, 28Aso, 38Po, G2 p-type dopant layer doped with 4 μπι zinc on the indium phosphide InP substrate.
Leptáním v zmesi roztokom zloženým z 30 g hydroxidu draselného v 200 ml vody a 30 g hexakyanoželezitanu draselného v 200 milllitrov vody a 30 g hexakyanoželezitanu draselného v 200 ml vody pri teplote 20 stupňov Celsia, za intenzívneho miešania sa za 4 min. na povrchu indiumgáliumarzenidřosfidu vyleptali jamky v miestach krystalických porúch.Etching in a mixture of a solution of 30 g potassium hydroxide in 200 ml water and 30 g potassium hexacyanoferrate in 200 milliliters of water and 30 g potassium hexacyanoferrate in 200 ml water at 20 degrees Celsius, with vigorous stirring for 4 min. wells etched on the surface of indium-aluminum arsenide phosphide at the sites of crystalline disorders.
Spósob zviditelňovania krystalografických porúch podfa vynálezu je možné využiť pri zisťovaní vhodnosti materiálu pre výrobu optoelektronických prvkov.The method of visualizing the crystallographic disorders according to the invention can be used to determine the suitability of the material for producing optoelectronic elements.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS862978A CS258708B1 (en) | 1986-04-24 | 1986-04-24 | Method of crystallographical failures visibilization in in 1-x ga x as 1-y p y indium galum arsenide phosphide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS862978A CS258708B1 (en) | 1986-04-24 | 1986-04-24 | Method of crystallographical failures visibilization in in 1-x ga x as 1-y p y indium galum arsenide phosphide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS297886A1 CS297886A1 (en) | 1987-12-17 |
| CS258708B1 true CS258708B1 (en) | 1988-09-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS862978A CS258708B1 (en) | 1986-04-24 | 1986-04-24 | Method of crystallographical failures visibilization in in 1-x ga x as 1-y p y indium galum arsenide phosphide |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS258708B1 (en) |
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1986
- 1986-04-24 CS CS862978A patent/CS258708B1/en unknown
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| Publication number | Publication date |
|---|---|
| CS297886A1 (en) | 1987-12-17 |
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