CS258708B1 - A method of visualizing crystallographic disorders in indieningarzenidphosphide Inl x GaK As, y Py orientation (001) - Google Patents

Abstract

The solution concerns a method of visualizing crystallographic defects in indium gallium arsenide phosphide In^.GaxAsj-yPy of orientation (001) by chemical etching. The essence of the solution is that indium gallium arsenide phosphide Ini_xGaxAsj-yPy, where 0.25 < x < 0.33 and 0.55 < < y < 0.73, is treated with a mixture of potassium hydroxide in the form of a 15% solution and potassium hexacyanoferrate in the form of a 15% solution mixed in a mass ratio of 2:1 to 1:2, at a temperature of 15 to 50 degrees Celsius, for a period of 1 to 5 minutes with intensive stirring. The method can be used to determine the suitability of the material for the production of optoelectronic elements.

Description

The invention relates to a method of visualizing crystallographic disorders in indium-gallium-phosphide orientation (001). Compounds of the indium-aluminum-arsenide phosphide type Ini-OaxAst-γP, where 0 s x 0,4 0.47 and í š 1.0 are suitable for the preparation of optoelectronic elements such as electroluminescent diodes, lasers, photodiodes operating in the wavelength range above 1.0 µπι.

The crystallographic disturbances in the material cause electrical degradation of these elements, therefore, the disturbance of the crystal growth is an attempt. Chemical etching is one of the methods for identifying disorders. For the crystallographic orientation (001), there is no known etching agent that would visualize disturbances for both n- and β-type indium gallium arsenide phosphide.

There is known in the literature an etching composition of 100 ml of water, 8 g of potassium hydroxide KOH and 0.5 g of potassium hexacyanoferrate (K ₃ Fe (CN) ₆ ), which reveals crystallographic disturbances on n-type indium-magnesium arsenide phosphide when photo-etched. On the p-type, this etch failed to visualize the disturbances.

The lack of a zviditel'ňovania Remove a crystallographic defects in indiumgáliumarzenidfosfide orientation (001) by chemical etching with a mixture of potassium hydroxide and potassium ferricyanide as an aqueous solution, which is characterized in that the indiumgáliumarzenidfosfid In _{(_:} Ga _x AS |. _Y P _in which 0.25 <x <

&Lt; 0.33 and 0.55 < γ < 0.73 are held at 15 to 50 ° C for 1 to 5 min. with vigorous stirring, a mixture consisting of an aqueous solution of 15% by weight. % potassium hydroxide and an aqueous solution containing 15 wt. potassium ferrocyanide mixed in a weight ratio of 2: 1 to 1: 2.

An advantage of the method of visualizing crystallographic disturbances is that by etching in this solution, crystallographic disturbances in both n- and β-type indium-aluminum arsenide 7D8 phosphide are visible at 15 to 50 ° C with vigorous stirring and under normal room lighting. Another advantage is the etching rate, which reaches a value of the order of 0.1 μπι / / min, and therefore it is possible not only to identify defects on the surface of the material, but also to monitor their continuation and distribution in the depth of the material.

Example 1

Using the liquid epitaxy method, the n-type n-type indium-phosphide nip-type and N-type n-type phosphoric layer

Ino, 7 ₂ Gao, 28As _o , 3 ₈ Po, G2 also n-type depths 3 μπι.

Etching the mixture with a solution of 30 grams of potassium hydroxide in 200 ml of water and 30 g of potassium ferrocyanide in 200 ml of water at 20 ° C, with vigorous stirring for 4 min. wells etched on the surface of indium-aluminum arsenide phosphide at sites of crystallographic disorders.

Example 2

The liquid epitaxy method was used to increase the indium phosphide InP n-type _adaptation layer and the Ino _j72 Gao, 28Aso, 38Po, G2 p-type dopant layer doped with 4 μπι zinc on the indium phosphide InP substrate.

Etching in a mixture of a solution of 30 g potassium hydroxide in 200 ml water and 30 g potassium hexacyanoferrate in 200 milliliters of water and 30 g potassium hexacyanoferrate in 200 ml water at 20 degrees Celsius, with vigorous stirring for 4 min. wells etched on the surface of indium-aluminum arsenide phosphide at the sites of crystalline disorders.

The method of visualizing the crystallographic disorders according to the invention can be used to determine the suitability of the material for producing optoelectronic elements.

Claims (1)

SUBJECT A method of visualizing crystallographic disturbances in indium gallium arsenide phosphide. 0.55 < y < 0.73 is loaded at 15 to 50 ° C for 1-5 min. with vigorous stirring with a mixture consisting of an aqueous solution containing 15 wt. potassium hydroxide and an aqueous solution containing 15 wt. potassium hexacyanoferrate mixed in a weight ratio of 2: 1 to 1: 2.