CS248306B1 - Semi-encapsulated microwave transistors with DC isolation of grounded electrode - Google Patents
Semi-encapsulated microwave transistors with DC isolation of grounded electrode Download PDFInfo
- Publication number
- CS248306B1 CS248306B1 CS848840A CS884084A CS248306B1 CS 248306 B1 CS248306 B1 CS 248306B1 CS 848840 A CS848840 A CS 848840A CS 884084 A CS884084 A CS 884084A CS 248306 B1 CS248306 B1 CS 248306B1
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- Czechoslovakia
- Prior art keywords
- semi
- encapsulated
- transistor
- chip
- microwave transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Wire Bonding (AREA)
Abstract
Do otvoru v substrátu hybridního integrovaného obvodu jsou vloženy polopouzdřené mikrovlnné tranzistory. Zejména elektroda čipu tranzistoru spolu s čipem blokového kondenzátoru I.IIS je připojena zlatým kontaktov^cím páskem nebo drátkem na kontaktní plošku polopouzdra. Ke kontaktním ploškám jsou připojeny jen napájecí obvody.Semi-encapsulated microwave transistors are inserted into the hole in the substrate of the hybrid integrated circuit. In particular, the electrode of the transistor chip together with the block capacitor chip I.IIS is connected by a gold contact strip or wire to the contact pad of the semi-encapsulation. Only the power circuits are connected to the contact pads.
Description
Vynález se’ týká polopousdřenýeh mikrovlnnýeh transistorů se stejnosměrným oddělením uzemněné elektrody, pomocí kterého se dosáhne maximálního využití parametrů tranzistoru.The present invention relates to semi-fused microwave transistors with DC separation of a grounded electrode to maximize the use of transistor parameters.
Za účele* jednoduché stabilizace pracovního hodu tranzistoru je třeba v zapojení se společným emitor*» uzemnit emitorovou elektrodu přes blokovací kondensátor· Nevýhodou tohoto řeěemí je, le blokovací kondenzátor je umístěn mimo polopusdro transistoru a indukčnost přívodů mezi čipem, blokovacím kondensátorem a semnieí rovinou způsobuje zvláětě na vyěěích frekvencích pokles dosažitelného výkonového zesíleni a nestabilitu tranzistoru, popřípadě zcela znemožní použiti uvedeného spůsobu stabi lisace pracovního bodu· Kromě toho způsobuje toto řeěemí spoustu technologických problémů při umístění blokovacího kondensátoru· Výěe uvedené nedostatky odstraňuje stejnosměrné oddělení zemněné elektrody polopousdřenýeh mikrovlnných tranzistorů podle vynálezu·For the purpose of * simple stabilization of the transistor throw, it is necessary to ground the emitter electrode through the blocking capacitor in connection with a common emitter * »The disadvantage of this solution is that the blocking capacitor is located at higher frequencies, decrease in achievable power amplification and transistor instability, or completely prevent the use of said method of stabilizing the operating point. In addition, this solution causes a lot of technological problems when placing the blocking capacitor.
Předmětem vynálezu jsou polopoigdřeně mikrovlnné transistory se stejnosměrným oddělením uzemněné elektrody, vyznačující se tím, že na montážním koliku je vedle čipu tranzistoru nasazen Čip blokovacího kondensátoru, který je připojen na zemněnou elektroduSUMMARY OF THE INVENTION The present invention relates to semiconductor microwave transistors with a DC separation of a grounded electrode, characterized in that a blocking capacitor chip, which is connected to a grounded electrode, is mounted next to the transistor chip on the mounting pin.
248 306 čipu tranzistoru a na kontaktní plošku umístěnou na izolační* dílu·248 306 transistor chip and contact pad placed on the insulating part *
Vyšší účinek polopoindřených mikrovlnných tranzistorů podle vynálezu ve srovnání s dosavadní technologií spočívá v tom, že po usazení mikrovlnného tranzistoru do otvoru polopouzdra v substrátu hybridního integrovaného obvodu se ke kontaktní plošce uzemněné elektrody tranzistoru připojí již pouze stejnosměrné napájecí obvody*The higher effect of the semi-induced microwave transistors of the present invention compared to the prior art is that only the DC supply circuits are connected to the ground pad of the transistor electrode after the microwave transistor has settled into the semi-enclosure opening in the hybrid integrated circuit substrate.
Polopouzdřené mikrovlnné tranzistory provedené podle vynálezu budou dále popsány se zřetelem k připojeným výirostfíW) kde na obr· 1 je řez polopouzdrem s vloženými čipy a na obr. 2 půdorys tohoto uspořádání·The semi-encapsulated microwave transistors made in accordance with the invention will be described below with reference to the attached wires, where in Fig. 1 is a cross-section of the semiconductor with embedded chips, and Fig. 2 is a plan view of this arrangement.
Do válcového isolačního dílu 2 s kontaktními ploškami na čelní ploěe je uložen montážní kolík 6, na kterém kromě čipu mikrovlnného tranzistoru 1. je usazen čip blokovacího kondenzátoru MIS 2. Zemněná elektroda čipu tranzistoru J. spolu s čipem 2 blokovacího kondenzátoru MIS je připojena zlatým kontaktovaeím páskem nebo drátkem J na kontaktní plošku která je umístěna na izolačním dílu 2·In the cylindrical insulating part 2 with the contact pads on the front surface, a mounting pin 6 is placed, on which the MIS blocking capacitor chip 2 is seated in addition to the microwave transistor chip 1. The ground electrode of the transistor chip J together with the MIS blocking capacitor chip 2 is connected by gold contacts strip or wire J on the contact pad which is located on the insulating part 2 ·
Při takto vytvořené jednoduché stabilizaci pracovního bodu tranzistoru pak uvedené řešení podle vynálezu zajišíuje maximální využití parametrů tranzistoru a minimální technologické nároky při výrobě eložitějěníeh hybridních integrovaných obvodů· Polopouzdřené mikrovlnné tranzistory se stejnosměrným oddělením uzemněné elektrody jsou využitelné ve všech mikrovlnných zesilovačích, v kterých je použito jak nízkoěumovýeh^ tak výkonových tranzistorů·With this simple stabilization of the transistor operating point, the solution according to the invention ensures maximum utilization of the transistor parameters and minimal technological requirements in the production of hybrid IC circuits. ^ so power transistors ·
Podstata vynálezu spočívá v tom, že do polopouzdra tranzistoru složeného z montážního kolíku 6 a válcového izolačního dílu 2 s kontaktními ploškami 4 je vedle čipu tranzistoru 2 usazen čip blokovacího kondenzátoru MIS 2, k němuž se připojí zamněnd elektroda čipu tranzistoru í spolu a kontaktní ploškou f polopouzdra ultrazvukovým svárem pomocí zlatého kontaktovacího pásku 2 či drátku·SUMMARY OF THE INVENTION The semiconductor of the transistor composed of the mounting pin 6 and the cylindrical insulating part 2 with the contact pads 4 is fitted next to the chip of the transistor 2 with a blocking capacitor MIS 2 to which ultrasonic welded sleeves with gold contact strip 2 or wire ·
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS848840A CS248306B1 (en) | 1984-11-19 | 1984-11-19 | Semi-encapsulated microwave transistors with DC isolation of grounded electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS848840A CS248306B1 (en) | 1984-11-19 | 1984-11-19 | Semi-encapsulated microwave transistors with DC isolation of grounded electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS248306B1 true CS248306B1 (en) | 1987-02-12 |
Family
ID=5439514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS848840A CS248306B1 (en) | 1984-11-19 | 1984-11-19 | Semi-encapsulated microwave transistors with DC isolation of grounded electrode |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS248306B1 (en) |
-
1984
- 1984-11-19 CS CS848840A patent/CS248306B1/en unknown
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