CS247009B1 - The method of passivation of semiconductor elements - Google Patents

Abstract

The solution concerns the passivation of PN junctions of semiconductor elements. The essence of the solution is that a doped layer of polycrystalline or amorphous silicon of the same conductivity type is grown on the formed PN junction before the application of the metallic layer of the ohmic contact as a diffusion or implanted layer forming the PN junction, while the layer of polycrystalline or amorphous silicon covers the base passivation layer only behind the diffusion or implanted layers forming the PN junction.

Description

The solution relates to the passivation of PN transitions of semiconductor elements. The essence of the solution is that before the application of the metallic layer of the ohmic contact, the doped layer of polycrystalline or amorphous silicon of the same type of conductivity as the diffusion-implanted layer forming the PN transition increases while the layer of polycrystalline or amorphous silicon overlaps the base passivation layer beyond diffuse or implanted. layers creating a PN transition.

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The invention relates to the passivation of PN transitions of semiconductor elements. Known PN passages of semiconductor devices are known in the art for their passivation processes, such as silica, silicon nitride, glass passivation and others.

The disadvantage of such passivated semiconductor elements, mainly with a large PN transition area, is the lack of passivation, which is manifested by the increased residual current value, or the instability of the produced semiconductor elements.

The aforementioned drawbacks are eliminated by the method of passivation of semiconductor elements according to the invention, which is based on the fact that a PN transition is formed through the base passivation layer on the silicon substrate with epitaxial layer. This can be created by diffusion or implanted layers. On the PN transition thus formed, the doped layer of polycrystalline is increased before the metallic layer of fire contact is applied; or; amorphous silicon. This layer must be of the same conductivity type as the diffuse or implanted PN transition layer. The polycrystalline or amorphous silicon layer must overlap the base passivation layer beyond the diffuse 009 or implanted layers forming the PN transition. An advantage of the process of passivation according to the invention is the increase in the reproducibility of production and the improvement of characteristic parameters occurring in smaller residual currents, higher stability and also the possibility of forming shallow diffuse or implanted PN transitions.

FIG. illustrates a semiconductor cut; an element characterized by a method of passivation according to the invention.

The planar semiconductor element according to the invention is produced by increasing the epitaxial layer 2 of the conductivity type 2 on the polished conductive N-type silicon substrate to form a base passivating layer 3. The photolithography is formed by way of etching to form an aperture for the conductive diffusion layer 4. After to make it a diffusion layer 5 of conductivity P, thereby forming a PN transition and increasing the layer of polycrystalline or amorphous silicon 7, of the same conductivity type to which the metallic layer of ohmic contact 6 is formed.

We divide the systems, assembly and encapsulation in a well-known way.

Claims (1)

SUBJECTS The passivation of semiconductor devices, where a PN transition is formed through the diffusion or implanted layers of a PN transition through the base passivation layer on an epitaxial-coated silicon substrate, characterized in that the dope-emptied polycrystalline coating eventually increases prior to forming the metallic layer of the ohmic contact (6) an amorphous silicon (7) of the same conductivity type with a diffusion eventually implanted layer (5), covering the base passivation layer (3) downstream of the diffusion layer (4). 1 sheet of drawings 247009 i