CS188016B1 - Device for preparation of the silicon monocrystals by pulling from the crucible - Google Patents

Device for preparation of the silicon monocrystals by pulling from the crucible

Info

Publication number
CS188016B1
CS188016B1 CS376477A CS376477A CS188016B1 CS 188016 B1 CS188016 B1 CS 188016B1 CS 376477 A CS376477 A CS 376477A CS 376477 A CS376477 A CS 376477A CS 188016 B1 CS188016 B1 CS 188016B1
Authority
CS
Czechoslovakia
Prior art keywords
crucible
pulling
preparation
silicon monocrystals
monocrystals
Prior art date
Application number
CS376477A
Other languages
English (en)
Inventor
Jiri Riha
Original Assignee
Jiri Riha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiri Riha filed Critical Jiri Riha
Priority to CS376477A priority Critical patent/CS188016B1/cs
Publication of CS188016B1 publication Critical patent/CS188016B1/cs

Links

CS376477A 1977-06-08 1977-06-08 Device for preparation of the silicon monocrystals by pulling from the crucible CS188016B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CS376477A CS188016B1 (en) 1977-06-08 1977-06-08 Device for preparation of the silicon monocrystals by pulling from the crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS376477A CS188016B1 (en) 1977-06-08 1977-06-08 Device for preparation of the silicon monocrystals by pulling from the crucible

Publications (1)

Publication Number Publication Date
CS188016B1 true CS188016B1 (en) 1979-02-28

Family

ID=5378668

Family Applications (1)

Application Number Title Priority Date Filing Date
CS376477A CS188016B1 (en) 1977-06-08 1977-06-08 Device for preparation of the silicon monocrystals by pulling from the crucible

Country Status (1)

Country Link
CS (1) CS188016B1 (cs)

Similar Documents

Publication Publication Date Title
JPS53149934A (en) Process for preparing sulfurrcontaining organo silicon compound
JPS5385718A (en) Method of producing high purity silicon
JPS51144574A (en) Method of growing silicon crystal by pulling up
AU534922B2 (en) Pulling monocrystalline silicon rods from a melt
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
GB2014871A (en) Manufacture of silicon rods by the czochralski technique
JPS5573451A (en) Preparation of silicon crystal
JPS53127420A (en) Process for preparing organo silicon compound
JPS5385719A (en) Method of producing high purity silicon
JPS545378A (en) Method of processing silicon monocrystal
CH612098A5 (en) Crucible for holding the melt for pulling crystals
JPS53135937A (en) Process for preparing silicon compound having oxime group bonded to silicone through oxygen
JPS5416430A (en) Process for preparing silicon compound
JPS5311886A (en) Apparatus for pulling single crystals from membrane of melt
CS188016B1 (en) Device for preparation of the silicon monocrystals by pulling from the crucible
JPS569298A (en) Method of growing silicon crystal
JPS53113817A (en) Quartz glass crucible for pulling up single crysal of silicon
JPS5438237A (en) Oven for growing epitaxial silicon
JPS53113780A (en) Method of manufacturing silicon monocrystal containing little impurities
GB2008084B (en) Growth of semiconductor compounds
EP0002535A3 (en) Process for the preparation of 21-hydroxy-20-methyl pregnanes
JPS55138293A (en) Device for instructing attachment of part to substrate
JPS5437678A (en) Method of pulling semiconductor silicon
JPS53110366A (en) Device for epitaxially growing semiconductor period structure from gaseous phase
JPS53142868A (en) Device for epitaxially growing semiconductor period structure from gaseous phase