CN86202829U - Narrow single mode semiconductor laser with cementing external cavity - Google Patents
Narrow single mode semiconductor laser with cementing external cavity Download PDFInfo
- Publication number
- CN86202829U CN86202829U CN 86202829 CN86202829U CN86202829U CN 86202829 U CN86202829 U CN 86202829U CN 86202829 CN86202829 CN 86202829 CN 86202829 U CN86202829 U CN 86202829U CN 86202829 U CN86202829 U CN 86202829U
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- China
- Prior art keywords
- semiconductor laser
- single mode
- laser diode
- exocoel
- cavity
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- Semiconductor Lasers (AREA)
Abstract
The utility model relates to a narrow linewidth single mode semiconductor laser with cementing external cavity, which is characterized in that a long coupling cavity is composed of a semiconductor laser diode, a self-focusing lens and a partially reflecting mirror, wherein, the semiconductor laser diode is arranged on the end surface of one side of the coupling cavity, and the two end surfaces of the self-focusing lens are coated with anti-reflection films; all the mechanical structures are adhesively bonded into integration; the inner of a sealed outer housing is charged with shielding gas. The linewidth of the utility model is not more than or equal to 1MHz, and the volume of the narrow linewidth single mode semiconductor laser with cementing external cavity is small (25*30*70 mm+[3]). When the utility model is used, any mechanical adjustment is not needed; at room temperature, any feedback control is not needed; the single mode settling time is not less than or equal to one hour.
Description
The utility model belongs to laser field.
Fields such as optical fiber communication, Fibre Optical Sensor, metering detection need the single mode semiconductor laser of narrow linewidth.External cavity semiconductor laser utilizes coupling cavity (Coupled Cavity) mode selection technique, can make common multiple die semiconductor laser realize that the single mode running to satisfy above-mentioned needs, provides effective means for further study and improve its performance under the condition of not destroying this body structure of semiconductor laser simultaneously effectively.Its structural principle such as figure one; form exterior resonant cavity (abbreviation exocoel) by a semiconductor laser diode (1) and an optical feedback system (2); optical feedback system (2) is in a part of reflected back semiconductor laser diode (1) of the luminous energy of output in the intrinsic cavity of semiconductor laser diode (1); relevant superposition by light wave fields in the Compound Cavity; changed the loss of each longitudinal mode in the laser; make certain longitudinal mode obtain stronger vibration advantage; and other longitudinal mode is curbed, thereby realize the single longitudinal mode running.Compare with other laser, the volume of exocoel single-mode laser is little, efficient is high, cost is low, the single mode running is stable, therefore, becomes a kind of by the promising device of various countries' primary study.
Application request external-cavity semiconductor laser single mode operation is stable, spectral line is narrow, easy to use, the life-span is long.The external-cavity semiconductor laser of leading of now having appeared in the newspapers can't satisfy above-mentioned requirements.
One is grating coupling long external cavity single mode semiconductor laser (Mark WFleming and Aram Mooradian, IEEEJof Quantum Electronics, Vol, QE-17, No.1, January 1981, and P44-59) shown in figure two A, it is made up of semiconductor laser diode (1), lens (2) and grating (3).Semiconductor laser diode left and right sides biend constitutes intrinsic cavity, behind the light scioptics (2) of its right side outgoing, become directional light, and in grating (3) surface by former road reflected back semiconductor laser diode (1), the left side of semiconductor laser diode (1) and grating (3) constitute exocoel.This laser is because the chamber is long long thereby can obtain single longitudinal mode laser output than narrow linewidth.But, and, make its volume big owing to used lens (2) and grating (3) because the output light angle of divergence of this laser is big.This is coupled it in optical fiber difficult, and also inconvenience is used.Its modified model is shown in figure two B, on the left side increase lens (4) and a partially reflecting mirror (5) are as light output end, can improve the directivity of light output like this, but owing to increased this two elements, cavity loss is increased, and its volume is further strengthened, heat sink (6) of semiconductor laser diode (1) bottom have stopped a part of light, causing Output optical power to descend, is the another shortcoming of these grating coupling long external cavity semiconductor lasers.
It two is short exocoel single mode semiconductor laser (Liou, ky: " SingleLongi-tudinal Mode Operation of Injection Laser Coup-led to a GRIN ROD External Cavity ", Electron.Lett., 1981.19, PP750-752), shown in figure three, it is by semiconductor laser diode (1), gradient-index lens (2) (GRIN ROD) reaches by the film formed speculum of reflection (3) and the adjusting mechanism that are plated on gradient-index lens (2) right side, and chiller is formed.The left and right sides biend of semiconductor laser diode forms intrinsic cavity, its left side and speculum (3) and forms exocoel.The speculum (3) that has used small and exquisite gradient-index lens (2) and be plated in its right side owing to this laser dwindles its volume greatly, and can obtain single longitudinal mode laser output.But since semiconductor laser diode (1) and gradient-index lens (2) can only be near each other and the two length all very little, thereby long exocoel can not be arranged, so this laser has bigger breadth of spectrum line, can not satisfy the requirement of coherent communication.
So far finding external-cavity semiconductor laser, their complex structure will carry out meticulous mechanical adjustment during use, and all is to work in air.This just makes them be not easy to use, and its life-span is reduced.
The purpose of this utility model is to propose a kind of new exocoel adhesion type narrow linewidth single mode semiconductor laser, in order to improve its output performance, makes it be more convenient for using and prolonging its life-span.
The utility model is used for deielectric-coating partially reflecting mirror, adjusting device and the can formation of light feedback and light output by the GRIN Lens that collimates as the semiconductor laser diode of gain medium, the small semiconductor refrigerator that is used to cool off semiconductor laser diode, light that semiconductor laser diode is sent.Its technical essential is:
(1) constitutes intrinsic cavity by being positioned at two end faces that coupling cavity one side end face is coated with the semiconductor laser diode of suitable anti-reflection deielectric-coating; The GRIN Lens and the deielectric-coating partially reflecting mirror that are coated with anti-reflection deielectric-coating with two ends carry out light feedback and light output; Form long coupling exocoel by uncoated end face of semiconductor laser diode and deielectric-coating partially reflecting mirror.
(2) entire infrastructure is bonding as a whole, and bonding agent can be epoxy resin or other glue.
(3) be filled with protective gas in can inside, protective gas can be N
2Gas.
The utility model spectral line width＜1MH, the angle of divergence is at 1.5 meters distant places, hot spot≤3 * 1.5mm
2At room temperature do not adopt any FEEDBACK CONTROL, single mode running stabilization time 〉=1 hour.The utility model also has the following advantages: volume is little, overall dimension≤25 * 30 * 70mm
3Life-span is long; Easy to use, need not carry out any mechanical adjustment, can obtain stable narrow linewidth single longitudinal mode laser output as long as inject suitable electric current, and the utility model can export laser simultaneously at two ends, be convenient to monitoring.
Figure four is made up of four parts for implementing concrete structure of the present utility model:
1.. semiconductor laser diode and cooling thereof, adjustment supporting device: semiconductor laser diode (1) left side is plated film, right-hand member plating ZrO not
2Anti-reflection film (T=90%～99%).It is welded on the semiconductor cooler (2), and this semiconductor cooler is welded in to be adjusted on the supporting structure (3).This adjusts and is welded on the base plate (8) of shell after supporting structure is adjusted.Semiconductor cooler is used for reducing the working temperature of laser diode, to improve device lifetime and to reduce threshold current.
2.. GRIN Lens and adjustment supporting structure thereof: the GRIN Lens (4) that both ends of the surface are coated with anti-reflection deielectric-coating is used for the light that semiconductor laser diode (1) sends is collimated, and the light that reflects from deielectric-coating partially reflecting mirror (6) is fed back in the semiconductor laser diode (1).The deielectric-coating partially reflecting mirror can be plane or sphere.The four-dimensional supporting device (5) of adjusting is used to adjust the position of GRIN Lens (4) with respect to semiconductor laser diode.After adjusting, this adjusts supporting structure (5) and fixes and be bonded in epoxy resin on the base plate (8).
3.. deielectric-coating partially reflecting mirror and adjust supporting structure: deielectric-coating partially reflecting mirror (6) is the part reflection from the light of semiconductor laser diode (1), after GRIN Lens (4), enter semiconductor laser diode (1) and realize the light feedback, simultaneously, also as the light outgoing mirror.Adjust supporting structure (7) and can carry out two dimension adjustment partially reflecting mirror (6); Mixing up the back fixes and is bonded on the base plate (8) with epoxy resin.
4.. shell: shell is made up of base plate (8), loam cake (9), front panel (10), rear side panel (11), left end cap (12) and right end cap (13).Front panel is equipped with electrical socket to carry out electric binding.Left end cap (12) and right end cap (13) have optical window (14) and (15).Shell is at N
2Use epoxy sealing under gas (or other protective gas) environment.The effect of shell is aforementioned each parts of supporting, carries out electric binding, air seal and heat radiation.
Description of drawings is as follows:
Figure one: the external-cavity semiconductor laser schematic diagram
(1): semiconductor laser diode
(2): the light reponse system
Figure two: grating coupling long external cavity single mode semiconductor laser
A (1): semiconductor laser diode
(2): lens
(3): grating
B (1): semiconductor laser diode
(2): lens
(3): grating
(4): lens
(5): partially reflecting mirror
(6): heat sink
Figure three: short exocoel single mode semiconductor laser schematic diagram
Wherein (1): semiconductor laser diode
(2): gradient-index lens (GRIN ROD)
(3): be plated in the speculum that the reflectance coating on the gradient-index lens (2) constitutes
Figure four: the utility model structure chart:
Wherein (1): semiconductor laser diode
(2): semiconductor cooler
(3): adjust supporting structure
(4): GRIN Lens
(5): the four-dimensional supporting structure of adjusting
(6): the deielectric-coating partially reflecting mirror
(7): adjust supporting structure
(8): base plate
(9): loam cake
(10): front panel
(11): the rear side panel
(12): left end cap
(13): right end cap
(14): left optical window
(15): right optical window
Claims (4)
1; a kind of exocoel single mode semiconductor laser; by semiconductor laser diode; GRIN Lens; speculum; adjusting mechanism and chiller are formed; it is characterized in that constituting intrinsic cavity by being positioned at two end faces that coupling cavity one side end face is coated with the semiconductor laser diode of suitable anti-reflection deielectric-coating; the GRIN Lens and the deielectric-coating partially reflecting mirror that are coated with anti-reflection deielectric-coating with two ends constitute light feedback and light output system; form long coupling exocoel by uncoated end face of semiconductor laser diode and deielectric-coating partially reflecting mirror; entire infrastructure is bonding as a whole with bonding agent; sealing is filled with protective gas in the enclosure in the shell.
2, according to the said exocoel adhesion type of claim 1 narrow linewidth single mode semiconductor laser, it is characterized in that bonding agent can be epoxy resin.
3,, it is characterized in that institute fills protective gas and can be N according to claim 1 and 2 said exocoel adhesion type narrow linewidth single mode semiconductor lasers
2Gas.
4,, it is characterized in that semiconductor laser diode is positioned at coupling cavity one side end face plating ZrO according to claim 1 and 2 said exocoel adhesion type narrow linewidth single mode semiconductor lasers
2Anti-reflection film T=90%～99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 86202829 CN86202829U (en) | 1986-05-08 | 1986-05-08 | Narrow single mode semiconductor laser with cementing external cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 86202829 CN86202829U (en) | 1986-05-08 | 1986-05-08 | Narrow single mode semiconductor laser with cementing external cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN86202829U true CN86202829U (en) | 1987-06-10 |
Family
ID=4806268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 86202829 Ceased CN86202829U (en) | 1986-05-08 | 1986-05-08 | Narrow single mode semiconductor laser with cementing external cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN86202829U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055131A (en) * | 2009-11-06 | 2011-05-11 | 莱丹加工技术公司 | Laser diode system with integrated and thermally controlled beam shaping element and gas detection method with a laser diode system |
| CN101521352B (en) * | 2008-02-28 | 2012-07-04 | 中国计量科学研究院 | Semiconductor laser device |
| CN102055131B (en) * | 2009-11-06 | 2016-11-30 | 阿克塞特里斯股份公司 | LD structure with the controlled beam shaping element of integrated temperature and by its gas detection method |
| WO2018086618A1 (en) | 2016-11-14 | 2018-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Narrow line-width laser |
| WO2022105883A1 (en) | 2020-11-20 | 2022-05-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Narrow linewidth laser |
-
1986
- 1986-05-08 CN CN 86202829 patent/CN86202829U/en not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521352B (en) * | 2008-02-28 | 2012-07-04 | 中国计量科学研究院 | Semiconductor laser device |
| CN102055131A (en) * | 2009-11-06 | 2011-05-11 | 莱丹加工技术公司 | Laser diode system with integrated and thermally controlled beam shaping element and gas detection method with a laser diode system |
| CN102055131B (en) * | 2009-11-06 | 2016-11-30 | 阿克塞特里斯股份公司 | LD structure with the controlled beam shaping element of integrated temperature and by its gas detection method |
| WO2018086618A1 (en) | 2016-11-14 | 2018-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Narrow line-width laser |
| WO2022105883A1 (en) | 2020-11-20 | 2022-05-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Narrow linewidth laser |
| US11901699B2 (en) | 2020-11-20 | 2024-02-13 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano) , Chinese Academy Of Sciences | Narrow linewidth laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CE01 | Termination of patent right |