CN86101082A - 浸渍阴极 - Google Patents
浸渍阴极 Download PDFInfo
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- CN86101082A CN86101082A CN198686101082A CN86101082A CN86101082A CN 86101082 A CN86101082 A CN 86101082A CN 198686101082 A CN198686101082 A CN 198686101082A CN 86101082 A CN86101082 A CN 86101082A CN 86101082 A CN86101082 A CN 86101082A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 16
- 230000008018 melting Effects 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 12
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 33
- 239000003870 refractory metal Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 101150038956 cup-4 gene Proteins 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011027 product recovery Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/515—Insulating materials associated therewith with cavities, e.g. containing a gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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- Computer Hardware Design (AREA)
- Solid Thermionic Cathode (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
本发明涉及一种浸渍阴极，其特点是在浸渍阴极颗粒表面至少有两层薄膜：下层是由如Os、Ru、Rh、Pd、Ir、Pt、Re、Mo、W、Ta等组成的高熔点金属薄膜；下层是含Sc2O3的高熔点金属层，并覆盖于下层之上。浸渍阴极颗粒是用电子发射材料浸渍难熔多孔主体而制成。本发明也涉及有此电极的电子管。此阴极表面有长时期稳定的低逸出功单原子层。
Description
本发明涉及一种浸渍阴极和电子管，特别是显示管和检波管，二者均使用所说的浸渍阴极;也涉及一种阴极，其表面有在特低温工作所要求的低逸出功的单原子层，以及使用这种阴极的电子管。
以往使用的低温工作的浸渍阴极（如日本专利公开№，154131/1983所述），其特点是在多孔的W和Sc2O3构成的主体上浸渍电子发射材料;阴极的表面有Ba、Sc和Os的单原子层，形成一低逸出功的表面。但是这种单原子层有如下的缺点：对热冲击或电子轰击不稳定;由于其非均匀分布，寿命较短;在低电场下电子发射性能衰减。
本发明的目的是提供一种浸渍阴极，该浸渍阴极有一低逸出功的单原子层，可以在较长时期内保持稳定并且阴极表面的功函数均匀。本发明的另一目的是提供使用这种阴极的电子管。
这种浸渍阴极和使用该阴极的电子管的特点是：浸渍阴极颗粒表面上至少附有两层薄膜，下层是高熔点金属薄膜，上层是含Sc2O3的高熔点金属层并将下层复盖着;浸渍的多孔阴极颗粒是将难熔的多孔主体用电子发射材料浸渍制成。
图1是本发明具体实施中的浸渍阴极横截面说明图。图2是本发明的阴极和常规低温工作的浸渍阴极电子发射性能的比较图。
本发明提供了一新结构的阴极，以形成对热冲击和电子轰击稳定并且均匀的单原子层，其法是用常规标准型的浸渍阴极（由电子发射材料浸渍难熔多孔主体制成）作为Ba源：在阴极表面上加高熔点金属薄膜以平滑表面;以及在高熔点金属薄膜上再加一层含Sc2O3的高熔点金属薄膜作为Sc和Os源。
常规的阴极表面上的含Ba、Sc和Os的单原子层是由Sc2O3（在浸渍时与电子发射材料不相作用）和多孔主体孔中扩散出来的Ba形成的，因而当Sc2O3不能连续供应时，单原子层则不复存在。另外，非反应性的Sc2O3存在量很小，难于控制。
在本发明中采用含Sc2O3的高熔点金属薄膜（如至少一个选自包括W、Mo、Ta、Tr、Os、Re、Ru、Rh、Pd和Pt的一组金属的薄膜）作为Sc2O3源，并且此薄膜的厚度要求10nm（毫微米）至1μm（微米）。
上述标准型的浸渍阴极的表面作为下层，其平均孔径为5μm。如果上述的金属薄膜直接在此表面上形成，将会产生一些困难：例如，Ba的供应趋于集中在薄膜的直接下方，薄膜的形成会不均匀。本发明提供的薄膜层置于所说的薄膜之下就可以阻止这种情况。一种高熔点的金属已足以形成这种下层薄膜，但最好是选自如Os、Re、Pt、Ru等的高熔点贵金属的至少一种金属，这类金属对电子发射材料的反应性较低。
在下层薄膜中也要有人工控制的微孔或裂隙，以形成能使Ba容易扩散至上层薄膜的结构。推荐的微孔孔径或裂隙宽度为10nm至2μm，最好是10nm至1μm。
对于钡源来说，除了上述标准型浸渍阴极外，也可用能像压制阴极供应Ba之类的材料。
下面以图1叙述本发明的一个典型例子。
图1为本发明的浸渍阴极横截面图解，图中1代表颗粒直径为1.4mm的阴极主体材料，由钨主体2构成，并以电子发射材料浸渍孔隙3，孔隙率为20至25%。电子发子材料是BaCO3、CaCO3和Al2O3的混合物，其克分子比为4∶1∶1，也可用不同的克分子比或在其中加入其它物质。除W外使用Mo、Ta、Re、Ru、Rh、Pd、Os、Ir、Pt的多孔主体或这些金属的合金也是适合的。
首先，将颗粒1插入钽杯4，然后将钽杯4用激光焊于钽管套5的内上部，也可用低温焊代替激光焊。由加热器7加热阴极颗粒1，加热器7是包以氧化铝的芯线6，装置在钽管套5内部的底部。这是作为Ba源的标准型的浸渍阴极。Ba的供应量视阴极颗粒被加热的温度而定，但也可改变电子发射材料的克分子比来调节或者在所说的主体材料中加Zr、Hf、Ti、Cr、Mn、Si和Al之类的活化剂来调节。
用厚度约为500nm的Os层（采用电子轰击加热）作为颗粒1表面的高熔点金属薄膜8。形成这层薄膜的材料，除Os外还有如Ru、Rh、Pd、Ir、Pt、Re等贵金属;如Mo、W和钽的高熔点金属以及这些物质的合金。适合的薄膜厚度为10nm至1μm。Sc2O3源是由含W和Sc2O3的薄膜9构成，厚度10nm至1μm，采用真空喷镀法形成，除W外，用Mo、Re、Ru、Rh、Pd、Os、Ir、Pe和Ta或者这些金属的合金也是适合的。此例中Sc2O3在W中的含量优先选用10%（重量），推荐选择范围为1至50%（重量）。
用这种阴极测定饱和电流密度，将5μS宽、重复周期为100Hz的高压脉冲加于一二极管构造的阳极，测定结果示于图2。图2中10代表阴极的发射特性，此阴极含10%（重量）的Sc2O3和约100nm厚的W薄膜9，Os薄膜8的厚度约为500nm。上述无薄膜8和9的常规阴极是与特性10一致的。但除去在5×10-5托的Ar气中喷镀的包括Ba、Sc和Os的单原子层以后，则特性降低，以11说明之。本发明的阴极几乎不产生电子发射衰减现象致使单原子层消失，如果阴极有一定程度的衰减，可在1150℃加热15分钟即可恢复特性（10）。另外，与未经平滑处理的阴极比较，此阴极的电子发射特性在低电场下有显著的改进。
根据所述，很明显，本发明有这样的效果：如果含Ba、Sc和Os（均为维持低功函数条件的主要因素）的单原子层破坏了，由于单原子层又重新形成，所以观察不到电子发射特性的衰减。如果其电子发射特性确有衰减，只要将阴极于1150℃加热大约15-30分钟，便有完整的单原子层形成，因而维持其长工作寿命和低温工作的特性。
再者，由于用高熔点金属薄膜的平滑处理改进了低电场下电子发射的衰减，将其应用于如显示管的各种电子管便产生了低温工作效应。
Claims (6)
1、一种浸渍阴极，其特征是在有电子发射材料浸渍难熔多孔主体形成的浸渍阴极表面上至少有两层薄膜：下层是高熔点金属薄膜；上层是含Sc2O3的高熔点金属薄膜，并复盖于下层薄膜之上。
2、根据权利要求1所述的浸渍阴极，其特征在于其中所说的高熔点金属薄膜至少是一种选自一组包括W、Mo、Ta、Re、Ru、Rh、Pd、Os、Ir和Pt的金属。
3、根据权利要求1或2所述的浸渍阴极，其特征在于其中所说的下层薄膜的厚度为10nm至1μm，上层薄膜厚度为10nm至1μm。
4、根据权利要求1所述的浸渍阴极，其特征在于其中所说的高熔点金属是有小孔或裂隙的，而所说的小孔的直径或裂隙宽度是在10nm至2μm范围内。
5、具有浸渍阴极的电子管，其特征是此浸渍阴极的制备是在浸渍阴极颗粒表面上至少有两薄膜：下层是高熔点金属薄膜;上层是含Sc2O3的高熔点金属薄膜，并复盖在下层之上，浸渍阴极颗粒是将电子发射材料浸渍难熔多孔主体而制成。
6、根据权利要求5所述的电子管，其特征在于其中浸渍阴极颗粒表面上的下层金属薄膜厚度为10nm至1μm，上层金属薄膜厚度为10nm至1μm。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60023085A JPS61183969A (ja) | 1985-02-08 | 1985-02-08 | 電界効果トランジスタ |
| JP23084/85 | 1985-02-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86101082A true CN86101082A (zh) | 1986-08-20 |
| CN86101082B CN86101082B (zh) | 1988-12-28 |
Family
ID=12100581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86101082A Expired CN86101082B (zh) | 1985-02-08 | 1986-02-06 | 浸渍阴极 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS61183969A (zh) |
| CN (1) | CN86101082B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628136A (zh) * | 2012-04-13 | 2012-08-08 | 北京工业大学 | 一种铼钨基阴极材料及其制备方法 |
| CN109390195A (zh) * | 2018-11-29 | 2019-02-26 | 北京工业大学 | 一种亚微米结构顶层含钪阴极及其制备方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100236101B1 (ko) * | 1997-09-29 | 1999-12-15 | 김영환 | 반도체 소자 및 제조 방법 |
| US8022489B2 (en) | 2005-05-20 | 2011-09-20 | Macronix International Co., Ltd. | Air tunnel floating gate memory cell |
| KR100818287B1 (ko) * | 2007-01-10 | 2008-03-31 | 삼성전자주식회사 | 폴리 실리콘의 형성방법, 이 폴리 실리콘을 구비하는 박막트랜지스터 및 그 제조방법 |
| JP2008270641A (ja) * | 2007-04-24 | 2008-11-06 | Elpida Memory Inc | 電界効果トランジスタ |
| JP2010080561A (ja) | 2008-09-25 | 2010-04-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
-
1985
- 1985-02-08 JP JP60023085A patent/JPS61183969A/ja active Pending
-
1986
- 1986-02-06 CN CN86101082A patent/CN86101082B/zh not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628136A (zh) * | 2012-04-13 | 2012-08-08 | 北京工业大学 | 一种铼钨基阴极材料及其制备方法 |
| CN102628136B (zh) * | 2012-04-13 | 2014-02-26 | 北京工业大学 | 一种铼钨基阴极材料及其制备方法 |
| CN109390195A (zh) * | 2018-11-29 | 2019-02-26 | 北京工业大学 | 一种亚微米结构顶层含钪阴极及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183969A (ja) | 1986-08-16 |
| CN86101082B (zh) | 1988-12-28 |
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