CN2916842Y - Field effect tube floating drive device - Google Patents

Field effect tube floating drive device Download PDF

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Publication number
CN2916842Y
CN2916842Y CNU2006200741156U CN200620074115U CN2916842Y CN 2916842 Y CN2916842 Y CN 2916842Y CN U2006200741156 U CNU2006200741156 U CN U2006200741156U CN 200620074115 U CN200620074115 U CN 200620074115U CN 2916842 Y CN2916842 Y CN 2916842Y
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China
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circuit
switching tube
mos switching
type mos
power amplification
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Expired - Fee Related
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CNU2006200741156U
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Chinese (zh)
Inventor
郑姚生
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Southeast University
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Southeast University
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Priority to CNU2006200741156U priority Critical patent/CN2916842Y/en
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Publication of CN2916842Y publication Critical patent/CN2916842Y/en
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Abstract

A field effect tube (N-type MOS tube) suspension driving device is provided, which relates to a driving method for a MOS switch tube in a negative voltage maintenance voltage pulse generator in a dual polarity energy restoration and maintenance driving circuit for groove type plasma display board. Especially, with the adoption of the MOS switch tube suspension driving circuit, the dual polarity energy restoration and maintenance driving circuit for groove type plasma display board can be realized. In the utility model, the output ends of a DC / DC power source chip (1) is connected to a benchmark power source circuit (2) and a power amplification circuit (6); the output end of the benchmark power source circuit (2) is respectively connected to a optoelectronic isolator circuit (4) and a reverse driver circuit (5); the output end of a voltage control circuit (3) is connected to the optoelectronic isolator circuit (4); the output end of the optoelectronic isolator circuit (4) is connected to the reverse driver circuit (5); the output end of the reverse driver circuit is connected to the power amplification circuit (6); the output end of the power amplification circuit is connected to the N-type MOS switch tube (7).

Description

Field effect tube suspension driving device
Technical field
The utility model relates to and is applied to field effect transistor (N type metal-oxide-semiconductor) suspension driving method, especially the bipolar energy recovering at groove type plasma display panel keeps in the driving circuit, keep the driving circuit of the MOS switching tube in the voltage impulse generator as negative voltage, make the bipolar energy recovering of groove type plasma display panel keep driving circuit just to be achieved.
Background technology
The plasma panel display (PDP) that early 1990s rises, with its digitizing, giant-screen, high resolving power, high definition, wide visual angle and thin thickness, advantage such as in light weight is subjected to extensive concern.
Existing P DP screen all adopts three electrode AC plasma plate displays (AC-PDP) at present, 3 orthogonal thereto shapes of electrode are distributed on the front-back baseboard, discharge is then carried out between two substrates, horizontal distribution and is kept electrode (X electrode) and scan electrode (Y electrode) on the prebasal plate, both are called as show electrode together, the addressing electrode (A electrode) that on metacoxal plate, vertically distributing, X electrode and Y electrode be parallel to each other and with A electrode quadrature.In AC-PDP showed, in the phase of keeping, X electrode and Y electrode alternately added high pressure, made the unit generation discharge that has accumulated the wall electric charge in address period.Thereby realize the demonstration of image.
In the groove type plasma display panel (SM-PDP) of Southeast China University's display technique research centre independent development, employing be that two electrodes are respectively to keep electrode (X electrode) on the prebasal plate; The interchange subtend discharge mode of the addressing electrode on the metacoxal plate (A electrode).X electrode and A electrode quadrature in SM-PDP shows, in the phase of keeping, only add the positive and negative high pressure that replaces and make address period accumulate the unit generation discharge of wall electric charge, thereby realize that image shows on the X electrode.
For the bipolar energy recovering of realizing groove type plasma display panel keeps driving circuit, need the drain electrode of N type MOS switching tube to be operated in the negative supply voltage state, driving circuit at present N type MOS switching tube mainly adopts IR2100 series chip for driving, its feature is to control two different N type MOS switching tubes on chip piece simultaneously, finishes different switch control respectively.But it requires the drain electrode or the ground connection of MOS switching tube, or connects positive voltage.Connect negative voltage for the drain electrode that needs the MOS switching tube like this, IR2100 series chip for driving can't meet the demands.
Summary of the invention
Technical matters: the drain electrode that the purpose of this utility model provides a kind of N of making type MOS switching tube can be operated in the field effect tube suspension driving device of negative supply voltage state.
Technical scheme: the utility model provides a kind of field effect tube suspension driving device at N type MOS switching tube.This circuit utilizes DC/DC direct supply chip and photoelectrical coupler that the drive signal effective isolation of MOS switching tube is opened, and forms a N type MOS switching tube suspension driving circuit by reverse driven and power amplifier.This circuit can make the drain electrode of MOS switching tube be operated in the negative voltage state.And the present invention is applicable to the driving of all N type MOS switching tubes.
Field effect tube suspension driving device of the present utility model is made up of DC/DC direct supply chip, reference power circuit, voltage control circuit, photoisolator circuit, reverse driven circuit, power amplification circuit, N type MOS switching tube; In this device, the output terminal of DC/DC direct supply chip connects the input end of reference power circuit, power amplification circuit respectively, the output terminal of reference power circuit connects the input end of photoisolator circuit, reverse driven circuit respectively, the connection that is in series in proper order of voltage control circuit, photoisolator circuit, reverse driven circuit, power amplification circuit, N type MOS switching tube.
Adopt DC/DC direct supply chip and photoisolator circuit to carry out effective isolation with offering the power supply voltage signal of N type MOS switching tube and the grid voltage control signal of N type MOS switching tube respectively, make the drain electrode of N type MOS switching tube be in the duty on the ground that suspends, thereby the drain electrode that realizes N type MOS switching tube is operated in the negative voltage state.The power amplification circuit of this device adopts the complementary transistor power amplification circuit of being made up of first emitter follower, second emitter follower, and its output terminal joins by the 5th resistance that is in parallel and the control utmost point of the switching tube in diode and the N type MOS switching tube.
The Control of Voltage pulse that voltage control circuit is made up of programmable logic chip produces pulse signal, and according to different time constants, the unlatching and the closure time of control metal-oxide-semiconductor are guaranteed the realization of MOS switching tube function.
The principle of work of N type MOS switching tube suspension driving circuit is as follows:
N type MOS switching tube suspension driving circuit is to adopt DC/DC direct supply chip and the photoisolator circuit will offer the power supply voltage signal of MOS switching tube respectively and the grid voltage control signal of MOS switching tube is carried out effective isolation, the drain electrode of MOS switching tube is in suspend the duty on ground, thereby the drain electrode that realizes the MOS switching tube is operated in the negative voltage state.
Beneficial effect: because in the groove type plasma display panel (SM-PDP), employing be that two electrodes are respectively to keep electrode (X electrode) on the prebasal plate; The interchange subtend discharge mode of the addressing electrode on the metacoxal plate (A electrode).X electrode and A electrode quadrature in SM-PDP shows, in the phase of keeping, only add the positive and negative high pressure that replaces and make address period accumulate the unit generation discharge of wall electric charge, thereby realize that image shows on the X electrode.For the bipolar energy recovering of realizing groove type plasma display panel keeps driving circuit, need the drain electrode of N type MOS switching tube to be operated in the negative supply voltage state, we design N type MOS switching tube suspension driving circuit, keep the driving circuit of the MOS switching tube in the voltage impulse generator as negative voltage, make the bipolar energy recovering of groove type plasma display panel keep driving circuit just to be achieved.Guaranteed the operate as normal of SM-PDP complete machine.
Description of drawings
Fig. 1 is the structured flowchart of field effect tube suspension driving device.
Fig. 2 is the circuit theory diagrams of field effect tube suspension driving device.
Have among the above figure: DC/DC direct supply chip 1, reference power circuit 2, voltage control circuit 3, photoisolator circuit 4, reverse driven circuit 5, power amplification circuit 6, N type MOS switching tube 7.
Embodiment
Figure 1 shows that the structure of N type MOS switching tube suspension driving device, form by DC/DC direct supply chip 1, reference power circuit 2, voltage control circuit 3, photoisolator circuit 4, reverse driven circuit 5, power amplification circuit 6, N type MOS switching tube 7.The output of DC/DC direct supply chip 1 connects reference power circuit 2, power amplification circuit 6 respectively, the output of reference power circuit connects photoisolator circuit 4, reverse driven circuit 5 respectively, the output of voltage control circuit 3 connects photoisolator circuit 4, the output of photoisolator circuit 4 connects reverse driven circuit 5, the output of reverse driven circuit 5 connects power amplification circuit 6, and the output of power amplification circuit 6 connects N type MOS switching tube 7.
Figure 2 shows that the electrical schematic diagram of N type MOS switching tube suspension driving circuit.In N type MOS switching tube suspension driving circuit, can drive single N type MOS switching tube, also can drive two compound N type MOS switching tubes.
The embodiment of N type MOS switching tube suspension driving circuit is as follows:
DC/DC direct supply chip 1 is made up of the DC-DC power supply chip, produces thus and external power supply suspended power supply differently, offers reference power circuit respectively as the power supply of importing power supply and power amplification circuit.Grid and the drain electrode of guaranteeing the MOS switching tube are operated in the ground state that suspends; Reference power circuit 2 mainly is made up of three end power regulators, also can form a mu balanced circuit with a resistance and voltage stabilizing diode, produce thus a suspension reference voltage offer photoelectricity every
From device circuit and reverse driven circuit supply voltage as them.Guarantee that photoisolator circuit and reverse driven circuit working are at the ground state that suspends; The Control of Voltage pulse that voltage control circuit 3 is made up of programmable logic chip produces pulse signal, produces thus according to the unlatching of different time constant control metal-oxide-semiconductors and the pulse signal of closure time, guarantees the realization of MOS switching tube function; Photoisolator circuit 4 mainly comprises photoelectrical coupler M1, and resistance R 1, R2 are formed, the unlatching of guaranteeing the metal-oxide-semiconductor that produces by voltage control circuit and the pulse signal of closure time be operated in suspend state; Reverse driven circuit 5 mainly is made up of high pressure output driver M2 and resistance R 3, R4, guarantees that the pulse signal of the unlatching of metal-oxide-semiconductor and closure time can the driving power amplifying circuit; Complementary transistor T1, T2, resistance R 5, the fast recovery diode D1 of the power amplification circuit 6 main npn of use and two parameter symmetries of pnp form, and T1 and T2 are connected into emitter follower circuit, in order to improve carrying load ability; N type MOS switching tube circuit 7 is a N type MOS switching tube;
The course of work of N type MOS switching tube suspension driving circuit is as follows:
At first offer the power supply of reference power circuit respectively as input power supply and power amplification circuit by one of DC-DC power supply chip generation and external power supply suspended power supply VEE differently.And, produce a suspension reference voltage V DD and offer photoisolator circuit and reverse driven circuit supply voltage as them by the reference power circuit that three end power regulators are formed.Like this, guarantee that all later circuit of photoisolator output are operated in the ground state that suspends all; Thereby just guaranteed that the grid of MOS switching tube and drain electrode are operated in the ground state that suspends.The closure or openness pulse signal XPZL of the metal-oxide-semiconductor that produces by voltage control circuit, at first arrive the input end of photoisolator 6N137 by resistance R 1, through the input signal of inverse suspension pulse signal of its output of 6N137 as reverse driven circuit 7406,7406 is open-collector high pressure output drivers, the pulse signal homophase amplitude that produces by resistance R 4 one of output and voltage control circuit is the input signal of the pulse signal of VDD as power amplification circuit, complementary transistor T1 by npn and two parameter symmetries of pnp, the power amplification circuit that T2 forms, pass through T1, T2 connects into emitter follower circuit, improved the driving force of signal, this moment, the pulse amplitude of output was VEE, by resistance R 5, fast recovery diode D1 links to each other with the grid of N type MOS switching tube, and the drain electrode of N type MOS switching tube then links to each other with the ground of suspended power supply.Produce a suspension driving pulse thus and controlled the closure or openness of N type MOS switching tube.Reach the purpose of N type MOS switching tube Suspension Control.Suspended power supply V EThe power supply amplitude at 9V---between the 18V.

Claims (2)

1, a kind of field effect tube suspension driving device, it is characterized in that in this device, the output terminal of DC/DC direct supply chip (1) connects the input end of reference power circuit (2), power amplification circuit (6) respectively, the output terminal of reference power circuit (2) connects the input end of photoisolator circuit (4), reverse driven circuit (5) respectively, the connection that is in series of voltage control circuit (3), photoisolator circuit (4), reverse driven circuit (5), power amplification circuit (6), N type MOS switching tube (7) order.
2, field effect tube suspension driving device according to claim 1, the power amplification circuit (6) that it is characterized in that this device adopts the complementary transistor power amplification circuit of being made up of first emitter follower (T1), second emitter follower (T2), and its output terminal joins by the 5th resistance (R5) that is in parallel and the control utmost point (G) of the switching tube (M2) in diode (D1) and the N type MOS switching tube (7).
CNU2006200741156U 2006-06-16 2006-06-16 Field effect tube floating drive device Expired - Fee Related CN2916842Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2006200741156U CN2916842Y (en) 2006-06-16 2006-06-16 Field effect tube floating drive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2006200741156U CN2916842Y (en) 2006-06-16 2006-06-16 Field effect tube floating drive device

Publications (1)

Publication Number Publication Date
CN2916842Y true CN2916842Y (en) 2007-06-27

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100395804C (en) * 2006-06-16 2008-06-18 南京华显高科有限公司 Field effect tube suspension driving device
CN101378254B (en) * 2007-08-31 2010-11-24 深圳市圣美歌科技有限公司 Drive circuit for high speed switch tube floating grid

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100395804C (en) * 2006-06-16 2008-06-18 南京华显高科有限公司 Field effect tube suspension driving device
CN101378254B (en) * 2007-08-31 2010-11-24 深圳市圣美歌科技有限公司 Drive circuit for high speed switch tube floating grid

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C19 Lapse of patent right due to non-payment of the annual fee
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