CN101719346B - X drive circuit of plasma display - Google Patents
X drive circuit of plasma display Download PDFInfo
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- CN101719346B CN101719346B CN 200910266016 CN200910266016A CN101719346B CN 101719346 B CN101719346 B CN 101719346B CN 200910266016 CN200910266016 CN 200910266016 CN 200910266016 A CN200910266016 A CN 200910266016A CN 101719346 B CN101719346 B CN 101719346B
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Abstract
The invention provides an X drive circuit of the plasma display which comprises an energy recovery circuit, a maintenance drive circuit and an X step voltage circuit, wherein the X step voltage circuit comprises a capacitor and a voltage conversion circuit, a first transistor and a second transistor; the voltage conversion circuit, the first transistor and the second transistor are connected in sequence; one end of the capacitor is connected between the voltage conversion and a first transistor; and the X step voltage circuit also comprises a current limiting component used for limiting aberrant current flowing through the first transistor and the second transistor. According to the invention, by adding the current limiting component in the X step voltage circuit for limiting the aberrant current flowing through power devices in the X step voltage circuit, the X drive circuit is protected, the demand on peak current resistance for the power devices in the X step voltage circuit is also lowered, thereby lowering the circuit cost.
Description
Technical field
The present invention relates to the plasma display field, more specifically, relate to a kind of X driving circuit of plasma display.
Background technology
The ultimate principle development that chromatic alternating-current plasma (AC-PDP) is based on gas discharge realizes showing through the ultraviolet excitation light-emitting phosphor that gas discharge sends.At present; Three-electrode surface discharge type AC-PDP is the most competitive a kind of PDP type; Adopt addressing and display separation (ADS) technology to realize what gray scale showed mostly for this AC-PDP; Be about to a TV Field and be divided into successively luminous 8 or 10 or 12 sub-field, every sub-field is formed by preparatory stage, address period and the phase of keeping, and just can realize that through the combination of suitable son 256 grades gray scale shows.
Three electrode quadrature shapes of three-electrode surface discharge type AC-PDP are distributed on the front-back baseboard, and discharge is then carried out between two substrates.The prebasal plate horizontal distribution and is kept electrode (X electrode) and scan electrode (Y electrode), and addressing electrode (A electrode) is vertically distributing on metacoxal plate.X electrode and Y electrode are parallel to each other, and with A electrode quadrature.
Fig. 1 is the drive waveforms of first son on the X, Y, A three electrodes according to correlation technique.As shown in Figure 1, first son is divided into: preparatory stage, address period and keep the phase.In the preparatory stage, three electrodes cooperatively interact, and wipe the wall electric charge that a son field is left over, and make full frame all display units reach consistent original state, and using two, to wipe be for making full frame consistance better; In address period, driving circuit carries out addressing to each row of Y electrode according to top-down order, writes image coded data at the A electrode simultaneously, and the unit that all will be shown in this child field has accumulated suitable wall electric charge; In the phase of keeping, Y electrode and X electrode alternately add high pressure, make the unit generation discharge that has accumulated the wall electric charge in address period, thereby realize the demonstration of image.
Preparatory stage, it all was 0V that three electrodes are attend institute's making alive when beginning, but because last when finishing of last or the last son field phase of keeping kept pulse is added on the X electrode; Keep discharge back negative wall electric charge of accumulation on the X electrode, on the Y electrode, accumulated positive wall electric charge, therefore; On the Y electrode, add wide positive ramp voltage (Vsetup ≈ 320V) earlier much larger than firing voltage; Make between X and Y electrode and discharge, accumulated positive wall electric charge and negative wall electric charge on latter two electrode that discharges respectively, on the Y electrode, add a wide negative ramp voltage (VY ≈ 190V) subsequently; On the X electrode, add a positive voltage (VS ≈ 190V); Make between X and the Y electrode slowly to reach firing voltage, discharge, neutralize wall electric charge positive on X and the Y electrode and negative wall electric charge; Make the state of full frame all unit reach the consistent state that extinguishes at last; The rising ramp voltage (Vsetup ≈ 190V) that adds subsequently is better for the state consistency that makes full frame all discharge cells with decline ramp voltage (VY ≈ 190V), adds a positive plateau voltage (Vbias ≈ 100V) this moment on the X electrode, and the address period of following again just can be addressed to each unit accurately; When the address period end phase of keeping began, X, Y electrode voltage equaled 0V earlier, and the Y electrode voltage equals Vs then; Make the voltage of discharge cell reach firing voltage, discharge beginning, the negative wall electric charge of Y electrode accumulation simultaneously; The wall electric charge that the accumulation of X electrode is positive, the Y electrode voltage becomes 0V subsequently, and the X electrode voltage equals Vs simultaneously; Make the voltage of discharge cell reach firing voltage and discharge, the negative wall electric charge of X electrode accumulation simultaneously, the wall electric charge that the accumulation of Y electrode is positive; The X electrode voltage becomes 0V then, and the Y electrode voltage equals Vs simultaneously, carries out a new round and keeps discharge.After the phase of keeping finishes, get into the demonstration of next sub-field.
Fig. 2 is the synoptic diagram according to the electrode structure of the plasma panel of correlation technique.As shown in Figure 2, Y1, Y2, Y3 represent 3 Y electrodes, and X1, X2, X3 represent 3 X electrodes, and A1, A2, A3 represent 3 A electrodes, and wherein Y1, X1, A1, A2, A3 constitute a display unit.Fig. 3 is the synoptic diagram according to the Y in the display unit of correlation technique, X, the interelectrode equivalent capacity of A.
Fig. 4 is the structural drawing according to a kind of X driving circuit of correlation technique.As shown in Figure 4, this X driving circuit comprises: energy recovery circuit, keep driving circuit, X plateau voltage circuit.
Above-mentioned energy recovery circuit comprises: capacitor C er, transistor QerH, diode DerH, transistor QerL, diode DerL and inductance L er.
The above-mentioned driving circuit of keeping comprises: transistor QsusH and transistor QsusL.
Above-mentioned X plateau voltage circuit comprises: the transistor Qbias that is connected with variohm, diode Dbias, capacitor C bias, transistor Qbias1 and transistor Qbias2; Wherein, Variohm, transistor Qbias and diode Dbias constitute voltage conversion circuit, are used for converting voltage Vs to voltage Vbias.Transistor Qbias1 and transistor Qbias2 are under the control of grid control signal, and Vbias outputs to XOUT with voltage.
According to X driving circuit shown in Figure 4; When running into the big image of adjacent two row gray scale variation; As when showing the complete white image of interlacing, the voltage on the A electrode in the ranks can be undergone mutation adjacent two, because the effect of the capacitor C ax between the electrode X, A; Cause the sudden change of X electrode voltage; Because all the X electrodes on the display screen connect together, big electric current appears thereby cause X to drive the plateau voltage circuit, and so big electric current can damage X as shown in Figure 4 and drive power device Qbias1, Qbias2 in the plateau voltage circuit.
By on can know that the power device that present X drives the plateau voltage circuit damages because of mutation current easily.
Summary of the invention
The present invention aims to provide a kind of X driving circuit of plasma display, and the power device that can solve present X driving plateau voltage circuit is easily because of problems such as mutation current damages.
To achieve these goals; A kind of X driving circuit of plasma display is provided; It comprises: energy recovery circuit, keep driving circuit and X plateau voltage circuit; Wherein, X plateau voltage circuit comprises capacitor and the voltage conversion circuit that is connected successively, the first transistor and transistor seconds, and an end of capacitor is connected between the end of voltage conversion circuit and the first transistor; X plateau voltage circuit also comprises: current-limiting components is used to limit the mutation current of the first transistor and transistor seconds of flowing through.
Preferably, current-limiting components is connected between the output terminal of transistor seconds and X plateau voltage circuit, and perhaps, an end of current-limiting components is connected with an end of voltage conversion circuit and capacitor, and the other end is connected to an end of the first transistor.
Preferably, current-limiting components is an inductance.
Preferably, the other end ground connection of capacitor.
Preferably, the first transistor and transistor seconds are MOS transistor.
Preferably, energy recovery circuit, keep driving circuit and be connected successively with X plateau voltage circuit.
According to the present invention; Drive current-limiting components of increase in the plateau voltage circuit at X; The X that is used for suppressing flowing through drives the mutation current of the power device of plateau voltage circuit; Thereby reach the effect of protection X driving circuit, reduce anti-peak point current demand simultaneously, thereby reduce circuit cost power device in the X plateau voltage circuit.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, constitutes the application's a part, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 is the drive waveforms of first son on the X, Y, A three electrodes according to correlation technique;
Fig. 2 is the synoptic diagram according to the electrode structure of the plasma panel of correlation technique;
Fig. 3 is the synoptic diagram according to the Y in the display unit of correlation technique, X, the interelectrode equivalent capacity of A;
Fig. 4 is the structural drawing according to a kind of X driving circuit of correlation technique;
Fig. 5 is a kind of structural drawing according to the X driving circuit of the embodiment of the invention;
Fig. 6 is the another kind of structural drawing according to the X driving circuit of the embodiment of the invention.
Embodiment
Below with reference to accompanying drawing and combine embodiment, specify the present invention.
Embodiment 1
Fig. 5 is a kind of structural drawing according to the X driving circuit of the embodiment of the invention.As shown in Figure 5, this X driving circuit comprises: energy recovery circuit, keep driving circuit, X plateau voltage circuit.
Above-mentioned energy recovery circuit comprises: capacitor C er, transistor QerH, diode DerH, transistor QerL, diode DerL and inductance L er.
The above-mentioned driving circuit of keeping comprises: transistor QsusH and transistor QsusL.
Above-mentioned X plateau voltage circuit comprises: the transistor Qbias that is connected with variohm, diode Dbias, capacitor C bias, transistor Qbias1 and transistor Qbias2; Wherein, Variohm, transistor Qbias and diode Dbias constitute voltage conversion circuit, are used for converting voltage Vs to voltage Vbias.Transistor Qbias1 and transistor Qbias2 are under the control of grid control signal, and Vbias outputs to XOUT with voltage.
Here, said energy recovery circuit, keep driving circuit and be connected successively with X plateau voltage circuit.
Compare with X plateau voltage circuit shown in Figure 4, X plateau voltage circuit as shown in Figure 5 also comprises: as the inductance L bias of current-limiting components, it is connected between transistor Qbias2 and the Xout.Because inductance has the inhibiting effect to mutation current; Thereby when when big electric current appears in X driving plateau voltage circuit; Can limit the electric current of flow through transistor Qbias1 and transistor Qbias2; Make transistor Qbias1 and transistor Qbias2 can avoid the destruction of causing, reach the purpose of holding circuit because of big electric current.Simultaneously, because the electric current in the X plateau voltage circuit is limited, make the anti-current peak of the power device in the X plateau voltage circuit, thereby reduce circuit cost.
Here, above-mentioned inductance L bias is a kind of optimal way of current-limiting components, and in the present invention, current-limiting components can also be that other can play element or the circuit that suppresses burst current, for example, and resistance.
Embodiment 2
Fig. 6 is the another kind of structural drawing according to the X driving circuit of the embodiment of the invention.X driving circuit shown in Figure 6 is with the difference of X driving circuit shown in Figure 5: the position as the inductance L bias of current-limiting components is different.In this example, the end of inductance L bias is connected to voltage conversion circuit and is connected with capacitor Cbias, and the other end is connected to transistor Qbias 1, is used to limit the mutation current of transistor Qbias1 and transistor Qbias2 of flowing through.Just, inductance L bias is between node Vbias and transistor Qbias1.
Equally; Because inductance has the inhibiting effect to mutation current; Thereby when when big electric current appears in X driving plateau voltage circuit; Can limit the electric current of flow through transistor Qbias1 and transistor Qbias2, make transistor Qbias1 and transistor Qbias2 can avoid the destruction of causing, reach the purpose of holding circuit because of big electric current.Simultaneously, because the electric current in the X plateau voltage circuit is limited, make the anti-current peak of the power device in the X plateau voltage circuit, thereby reduce circuit cost.
Here, above-mentioned inductance L bias is a kind of optimal way of current-limiting components, and in the present invention, current-limiting components can also be that other can play element or the circuit that suppresses burst current, for example, and resistance.
Here, said energy recovery circuit, keep driving circuit and be connected successively with X plateau voltage circuit.
In the foregoing description 1 and 2, transistor Qbias1 in the X plateau voltage circuit and transistor Qbias2 can be MOS transistor.
According to the present invention; Drive current-limiting components of increase in the plateau voltage circuit at X; The X that is used for suppressing flowing through drives the mutation current of the power device of plateau voltage circuit; Thereby reach the effect of protection X driving circuit, reduce anti-peak point current demand simultaneously, thereby reduce circuit cost power device in the X plateau voltage circuit.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the X driving circuit of a plasma display; Comprise energy recovery circuit, keep driving circuit and X plateau voltage circuit; Wherein, Said energy recovery circuit, keep driving circuit and be connected successively with X plateau voltage circuit, said X plateau voltage circuit comprises capacitor and the voltage conversion circuit that is connected successively, the first transistor and transistor seconds, and an end of said capacitor is connected between the end of said voltage conversion circuit and said the first transistor; It is characterized in that said X plateau voltage circuit also comprises:
Current-limiting components; Be used to limit the mutation current of said the first transistor and transistor seconds of flowing through; Wherein, said current-limiting components is connected between the output terminal of said transistor seconds and said X plateau voltage circuit, perhaps; One end of said current-limiting components is connected with an end of said voltage conversion circuit and said capacitor, and the other end is connected to an end of said the first transistor.
2. X driving circuit according to claim 1 is characterized in that, said current-limiting components is an inductance.
3. X driving circuit according to claim 1 is characterized in that, the other end ground connection of said capacitor.
4. according to each described X driving circuit in the claim 1 to 3, it is characterized in that said the first transistor and transistor seconds are MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910266016 CN101719346B (en) | 2009-12-31 | 2009-12-31 | X drive circuit of plasma display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910266016 CN101719346B (en) | 2009-12-31 | 2009-12-31 | X drive circuit of plasma display |
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| Publication Number | Publication Date |
|---|---|
| CN101719346A CN101719346A (en) | 2010-06-02 |
| CN101719346B true CN101719346B (en) | 2012-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910266016 Expired - Fee Related CN101719346B (en) | 2009-12-31 | 2009-12-31 | X drive circuit of plasma display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN209000515U (en) * | 2018-10-24 | 2019-06-18 | 惠科股份有限公司 | Top rake circuit and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1335974A (en) * | 1999-11-12 | 2002-02-13 | 松下电器产业株式会社 | Display and method for driving the same |
| CN1388950A (en) * | 2000-09-13 | 2003-01-01 | 松下电器产业株式会社 | Display and its driving method |
| CN1447300A (en) * | 2002-03-26 | 2003-10-08 | 富士通日立等离子显示器股份有限公司 | Capacitor loaded drive circuit and plasma display device |
| CN1658259A (en) * | 2003-10-16 | 2005-08-24 | 三星Sdi株式会社 | Plasma display panel driving device and method |
-
2009
- 2009-12-31 CN CN 200910266016 patent/CN101719346B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1335974A (en) * | 1999-11-12 | 2002-02-13 | 松下电器产业株式会社 | Display and method for driving the same |
| CN1388950A (en) * | 2000-09-13 | 2003-01-01 | 松下电器产业株式会社 | Display and its driving method |
| CN1447300A (en) * | 2002-03-26 | 2003-10-08 | 富士通日立等离子显示器股份有限公司 | Capacitor loaded drive circuit and plasma display device |
| CN1658259A (en) * | 2003-10-16 | 2005-08-24 | 三星Sdi株式会社 | Plasma display panel driving device and method |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2007-272025A 2007.10.18 |
| JP特开2008-309917A 2008.12.25 |
| JP特开2009-300731A 2009.12.24 |
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| CN101719346A (en) | 2010-06-02 |
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