CN2901581Y - 双晶混色发光二极管 - Google Patents

双晶混色发光二极管 Download PDF

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CN2901581Y
CN2901581Y CNU2005201445899U CN200520144589U CN2901581Y CN 2901581 Y CN2901581 Y CN 2901581Y CN U2005201445899 U CNU2005201445899 U CN U2005201445899U CN 200520144589 U CN200520144589 U CN 200520144589U CN 2901581 Y CN2901581 Y CN 2901581Y
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crystal
paste
wafer
emitting diode
light
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吴香辉
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Shenzhen Fujisunwah Electronic Technology Co Ltd
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Shenzhen Fujisunwah Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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Abstract

本实用新型涉及固体电光源，是一双晶混色发光二极管，由支架1、引脚8、银/绝缘胶2、晶片3、荧光胶5、金线6和环氧树脂9组成，其特征在于：支架1上固定有两颗晶片，晶片3和晶片4，晶片3串联或并联晶片4后，再在上面涂覆一层荧光胶，通过高温烤干后，再用金线5连接引脚8和晶片上的晶片焊垫7(即正/负极焊点)，使其形成一个串联或并联的电路，用环氧树脂9封装，即成不同形状的发光二极管。晶片3是蓝色晶片，晶片4是黄绿色晶片或红色晶片。双晶混色发光二极管的优点是：1是由于采用双晶混色可减少颜色及亮度的衰减；2是用不同波长的晶片可相互混和成不同颜色的光。

Description

双晶混色发光二极管
技术领域：
本实用新型涉及固体电光源，是指双晶混色发光二极管。
背景技术：
目前，发光二极管(见图1)是由支架、引脚、晶片、金线、晶片焊垫、银/绝缘胶、荧光胶和环氧树脂组成，其中，晶片上设有晶片焊垫，通过银/绝缘胶烘烤固定在支架上，一只晶片焊垫用金线与引脚连接，另一只晶片焊垫用金线与支架(支架作为引脚之一)连接，其上面灌封荧光胶，最后用环氧树脂塑封制成发光二极管，特殊颜色的发光二极管，例如白光、粉红光，晶片是用蓝色晶片，并在蓝色晶片上覆盖一层荧光粉，激发出白光或粉红光，这种产品单颗使用电压在2～4.5V之间。
发明内容：
本实用新型的目的是提供一种双晶混色发光二极管，它由支架、引脚、晶片、金线、晶片焊垫、银/绝缘胶、荧光胶和环氧树脂组成，其中，晶片上设有晶片焊垫，其特征在于：支架上通过银/绝缘胶固有蓝色、黄绿色或蓝色、红色两颗晶片，用金线将两晶片串联或并联后，再在上面涂覆一层荧光胶，烘烤固定后，再用金线将两晶片上的晶片焊垫(即正、负极)与引脚连接起来，形式成串或并联的电路，用环氧树脂封装成不同形状的发光二极管，单颗的使用电压在2-6v，通过电流为20mA。引脚数可为2～3只(含支架作为引脚之一)。
双晶混色发光二极管的优点是：1是由于采用双晶混色可减少颜色及亮度的衰减；2是用不同波长的晶片可相互混和成不同颜色的光，可灵活搭配；3是可根据应用电路改变成串/并联连接，其单颗使用电压可在2～6V之间变动。
附图说明：
图1、图2是现有发光二极管结构图；
图3、图4是双晶混色二极管的结构图；
图5、图6、图7是双晶混色二极管3支引脚(含支架)型的结构图。
图8是3支引脚双晶混色二极管串接的电路原理图。
图9是3支引脚双晶混色二极管并接的电路原理图。
具体实施方式：
见图3～图9，双晶混色发光二极管，由支架1、引脚8、银/绝缘胶2、晶片3、荧光胶5、金线6和环氧树脂8组成，其特征在于：支架1通过银/绝缘胶2固定有晶片3和晶片4，金线6连接晶片3和晶片4，晶片3和晶片4上面涂覆有一层荧光胶5，金线6连接引脚8和晶片上的晶片焊垫7(引脚是正极，焊垫是负极，形成一个串联或并联的电路)，外层包有环氧树脂9，即成不同形状的发光二极管。
晶片3是蓝色晶片，晶片4是黄绿色晶片或红色晶片。覆盖一层荧光胶5，是使光色更为均匀一致。
支架1是镀银的铁材或铜材。支架1内固定有2片发光晶片，用金线连接后形成串联/并联后形成混色光。双晶混色发光二极管，有2～3支脚(含支架作为引脚之一)。
选用不同波段范围的晶片和不同配比、不同用量的荧光胶来调色，双晶混色发光二极管可发出各种不同颜色的光。

Claims (3)

1、一种双晶混色发光二极管，由支架(1)、银/绝缘胶(2)、晶片(3)、荧光胶(5)、金线(6)和环氧树脂(9)组成，其中，晶片上设有晶片焊垫(7)，其特征在于：支架(1)通过银/绝缘胶(2)固定有晶片(3)和晶片(4)，金线(6)连接晶片(3)和晶片(4)，晶片(3)和晶片(4)上面涂覆有一层荧光胶(5)，金线(6)连接引脚(8)和晶片上的晶片焊垫(7)，外层包有环氧树脂(9)。
2、按权利要求1所述的双晶混色发光二极管，其特征在于：晶片(3)是蓝色晶片，主波长在430-480nm；晶片(4)是主波长在560-575nm的黄绿色晶片或主波长在620-660nm的红色晶片。
3、按权利要求1所述的双晶混色发光二极管，其特征在于：双晶混色发光二极管，有2～3只引脚(8)。
CNU2005201445899U 2005-12-13 2005-12-13 双晶混色发光二极管 Expired - Fee Related CN2901581Y (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024881A (zh) * 2009-09-15 2011-04-20 名硕电脑(苏州)有限公司 发光二极管
CN102299248A (zh) * 2010-06-25 2011-12-28 惟昌企业股份有限公司 Led封装支架改良制造方法及由此制得的封装结构
CN102454945A (zh) * 2010-10-27 2012-05-16 深圳市日上光电有限公司 一种获得高显色性暖白光的方法及其封装结构
CN108023007A (zh) * 2017-11-09 2018-05-11 江苏稳润光电科技有限公司 一种Lamp白光灯及其封装方式

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024881A (zh) * 2009-09-15 2011-04-20 名硕电脑(苏州)有限公司 发光二极管
CN102299248A (zh) * 2010-06-25 2011-12-28 惟昌企业股份有限公司 Led封装支架改良制造方法及由此制得的封装结构
CN102299248B (zh) * 2010-06-25 2014-04-23 惟昌企业股份有限公司 Led封装支架改良制造方法及由此制得的封装结构
CN102454945A (zh) * 2010-10-27 2012-05-16 深圳市日上光电有限公司 一种获得高显色性暖白光的方法及其封装结构
CN108023007A (zh) * 2017-11-09 2018-05-11 江苏稳润光电科技有限公司 一种Lamp白光灯及其封装方式

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