CN2899206Y

CN2899206Y - Micro-wafer array laser

Info

Publication number: CN2899206Y
Application number: CN 200620069122
Authority: CN
Inventors: 吴砺; 孙朝阳; 林斌; 凌吉武
Original assignee: GAOYI COMMUNICATION CO Ltd FUZHOU
Current assignee: GAOYI COMMUNICATION CO Ltd FUZHOU
Priority date: 2006-01-28
Filing date: 2006-01-28
Publication date: 2007-05-09
Anticipated expiration: 2016-01-28

Abstract

The utility model discloses a micro-wafer array laser, which comprises a holder, an array LD and an array micro-wafer laser with cavity times frequency, in which the array LD and the array micro-wafer laser with cavity times frequency are arranged on the holder, and a hole or a slot is arranged between the array micro-wafer laser with cavity times frequency on the holder. With the structure, the hole or slot is arranged between the micro-wafer lasers on the holder. Because cooling water or the cooling air can diffuse heat, laser output of high efficiency and stable can be obtained.

Description

The array micro-slice laser

Technical field

The utility model relates to laser field, relate in particular to and adopt semiconductor laser array as pumping source, or single high power pumping is decomposed into a plurality of pumping sources, or fiber bundle pumping or other pump modes, the array micro-slice laser that is made of microplate or other microlaser cavities.

Technical background

In semiconductor pump laser, mode is that semiconductor array laser is carried out pumping by side or end pumping mode to single laserresonator usually, thereby obtains high power laser light output.This mode existing problems usually is that system bulk is bigger, and structure is complicated.

In United States Patent (USP) UL5,115,445; UL5,256,164; UL5,403, propose another kind in 437 and be bonded at an on-chip micro-slice laser imagination with one group of LD array pumping, micro-slice laser as shown in Figure 1 comprises array LD101 and array microchip intracavity frequency doubling laser 102, this micro-slice laser is the Ultrashort cavity micro-slice laser, the laser cavity longitudinal mode spacing that its requires to obtain each microplate single longitudinal mode, obviously requires the every laser output that can only produce lower-wattage greater than the gain medium width that gains like this.At United States Patent (USP) UL5,256,164 propose to produce high-power component with this, but its given structure also is difficult for obtaining higher-wattage output actually, because its radiator structure is too simple, pumping when array LD101 power is big just can't in time be dispelled the heat, and the micro-slice laser system is difficult to obtain expected results.

Summary of the invention

The utility model purpose provides a kind of timely heat radiation to obtain the array micro-slice laser of high-power laser output.

The utility model purpose is achieved through the following technical solutions: the array micro-slice laser comprises pedestal, array LD and array microchip intracavity frequency doubling laser, array LD and array microchip intracavity frequency doubling laser correspondence are located on the pedestal, wherein are provided with hole or groove between the microchip micro-slice laser on the pedestal.

Between array LD and array microchip intracavity frequency doubling laser, also be provided with the array lenticule.

The utility model adopts above structure, owing to be provided with hole or groove between the micro-slice laser on the pedestal, can pass through cooling water or cooling air, and therefore heat radiation in time can obtain stable high-power laser output.

Description of drawings

Now in conjunction with the accompanying drawings the utility model is further elaborated:

Fig. 1 is the structural representation of existing array micro-slice laser;

Fig. 2 is a structural representation of the present utility model;

Fig. 3 is the decline cross section structure schematic diagram of shape cavity laser arrays of the utility model microplate;

Fig. 4 is the structural representation that the utility model adopts the micro-slice laser of semiconductor laser array;

Fig. 5 is the structural representation that the utility model adopts the micro-slice laser of the laser of exporting multifiber;

Fig. 6 is that the utility model adopts light laser to be beamed into the structural representation of the micro-slice laser of multiple beam;

Fig. 7 is the structural representation of the utility model embodiment one;

Fig. 8 is the structural representation of the utility model embodiment two.

Embodiment

Array micro-slice laser of the present utility model comprises pedestal 103, array LD101 and array microchip intracavity frequency doubling laser 102 shown in Fig. 2,3, array LD101 and array microchip intracavity frequency doubling laser 102 correspondences are located on the pedestal 103, wherein between the array microchip intracavity frequency doubling laser 102 on the pedestal 103, be provided with hole or groove 105, set hole or groove 105 can be along the three-dimensional settings, to reach the radiating effect of best ventilation water flowing, pedestal 103 can also adopt the big material of conductive coefficient, thereby obtains stable high-power laser output.Array LD101 and array microchip intracavity frequency doubling laser 102 can be directly bonding, or also are provided with array lenticule 104 between array LD101 and array microchip intracavity frequency doubling laser 102, with the light focusing of array LD101 output, to improve power.

As shown in Figure 4, array LD101 of the present utility model can adopt semiconductor laser array.

As shown in Figure 5, array LD101 of the present utility model can adopt the laser of output multifiber.

As shown in Figure 6, array LD101 of the present utility model can adopt and will be beamed into the laser of multiple beam than light laser.

When the utility model is specifically implemented, as shown in Figure 7, array microchip intracavity frequency doubling laser 102 comprise gain medium 106, with gain medium 106 matrix phases with medium 107 optical material close 108 and frequency-doubling crystal 109 with thermal coefficient of expansion, set material can be sheet or column shape, it is whole that each optical element adopts the in-depth optical cement to constitute, and water flowing or ventilation cooling are realized in the gap between each element.

When the utility model is specifically implemented, also can be as shown in Figure 8, array microchip intracavity frequency doubling laser 102 comprise gain medium 106, with gain medium 106 matrix phases with medium 107 optical material close 108 and frequency-doubling crystal 109, and other materials 110 with thermal coefficient of expansion, set material can be sheet or column shape, it is whole that each optical element adopts the in-depth optical cement to constitute, and water flowing or ventilation cooling are realized in the gap between each element.

Claims

1, array micro-slice laser, comprise pedestal, array LD and array microchip intracavity frequency doubling laser, array LD and array microchip intracavity frequency doubling laser correspondence are located on the pedestal, it is characterized in that: be provided with hole or groove between the array microchip intracavity frequency doubling laser on the pedestal.

2, array micro-slice laser according to claim 1, it is characterized in that: its hole or groove are along the three-dimensional setting.

3, array micro-slice laser according to claim 1 and 2 is characterized in that: its array LD and array microchip intracavity frequency doubling laser are directly bonding.

4, array micro-slice laser according to claim 1 and 2 is characterized in that: be provided with the array lenticule between array LD and array microchip intracavity frequency doubling laser.

5, array micro-slice laser according to claim 1 and 2 is characterized in that: array LD is the laser of semiconductor laser array, output multifiber or will be beamed into the laser of multiple beam than light laser.

6, array micro-slice laser according to claim 1 and 2, it is characterized in that: its array microchip intracavity frequency doubling laser comprise gain medium, with the gain medium matrix phase with medium optical material and the frequency-doubling crystal close with thermal coefficient of expansion, set material is sheet or column shape, it is whole that each optical element adopts the in-depth optical cement to constitute, and water flowing or ventilation are realized in the gap between each element.