CN2888652Y - N型基体单晶硅太阳电池 - Google Patents

N型基体单晶硅太阳电池 Download PDF

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Publication number
CN2888652Y
CN2888652Y CN 200520043749 CN200520043749U CN2888652Y CN 2888652 Y CN2888652 Y CN 2888652Y CN 200520043749 CN200520043749 CN 200520043749 CN 200520043749 U CN200520043749 U CN 200520043749U CN 2888652 Y CN2888652 Y CN 2888652Y
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single crystal
solar cell
crystal silicon
type
thickness
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胡宏勋
郑君
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Hu Hong Lord
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胡宏勋
郑君
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

本实用新型涉及一种N型基体单晶硅太阳电池采用N型硅单晶片为基体，制造太阳电池，其生产出的太阳电池效率和应用完全和用P型基体制成的太阳电池一样；本实用新型的太阳电池结构，从上面向下面各层依次是：上电极/氮化硅减反射膜/P+扩散层/N型单晶硅片/N+/背电极；其中：氮化硅减反射膜厚度约为0.75μm，P+扩散层的厚度约为0.2－0.25μm，薄层电阻约20Ω－cm，N+层厚度约为5－10μm，N型单晶硅片电阻率＞0.5Ω－cm。

Description

N型基体单晶硅太阳电池
技术领域
本实用新型涉及一种太阳电池的结构，特征别是有关于一种采用N型单晶硅片为基体制造的太阳电池。
背景技术
当前世界上太阳电池制造工厂，都采用P型硅单晶片为基体，制造单晶硅太阳电池，而没有采用N型硅单晶片为基体，制造单晶硅太阳电池。
发明内容
为解决前述问题，本实用新型提供一种N型基体单晶硅太阳电池；本实用新型的太阳电池结构，从上面向下面各层依次是：上电极/氮化硅减反射膜/P+扩散层/N型单晶硅片/N+/背电极；其中：氮化硅减反射膜厚度约为0.75um，P+扩散层的厚度约为0.2-0.25um，薄层电阻约20Ω-cm，N+层厚度约为5-10um，N型单晶硅片电阻率＞0.5Ω-cm。
本实用新型的优点是，其生产出的太阳电池效率和完全用P型基体制成的太阳电池一样，开创了使用N型基体单晶硅太阳电池的应用领域。
附图说明
附图是本实用新型N型基体单晶硅太阳电池的结构示意构图。
附图中标号说明：
1-，N型硅片，2-P+层，3-N+，4-SIN4氮化硅减反射膜，5-背电极(-)，6-上电极(+)
具体实施方式
请参阅附图所示，本实用新型采用固态硼源和固态磷源在扩散炉中一次性形成P+层，N+层解决了高效N型基体单晶硅太阳电池制造工艺中的一个关键技术问题；采用特制银浆来印制背电极5(负极)和上电极6(正极)，其特点是分别使用两种不同掺杂的银浆分别制造上电极5和背电极6，背电极5的银浆掺有少量磷，上电极6的银浆掺有少量的硼。这样才能和N+层和P+层形成良好的欧姆接触，提高电池的效率。
阳光从电池的正面入射，由于在空气和P+层硅之间有一层氮化硅减反射膜4，使得极大多数太阳光能入射到N型硅片1中，并产生电子空穴对，电子空穴对被N-P+形成的空间电荷区的强电场所分离，分别在P+区和N区形成光生电流，如果用导线将上电极6正极和下电极5负极引出，就可以作为一个能发电的电池。本实用新型中还有一个特殊的结构就是在电池背部有一层N+硅层，它和N型硅片形成N+/N结，它的作用是提高电池的开路电压和增加电池对长波光的有效吸收，从而达到提高电池效率的目的。

Claims (1)

1.一种N型基体单晶硅太阳电池，其特征在于，N型基体单晶硅太阳电池的结构，从上面向下面各层依次是：上电极/氮化硅减反射膜/P+扩散层/N型单晶硅片/N+/背电极；其中：氮化硅减反射膜厚度为0.75um，P+扩散层的厚度为0.2-0.25um，薄层电阻20Ω-cm，N+层厚度为5-10um，N型单晶硅片电阻率＞0.5Ω-cm。
CN 200520043749 2005-07-25 2005-07-25 N型基体单晶硅太阳电池 Expired - Fee Related CN2888652Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728440A (zh) * 2008-10-22 2010-06-09 诺华光谱有限公司 太阳能转换器和复合转换器
CN102044582A (zh) * 2009-10-10 2011-05-04 中电电气(上海)太阳能科技有限公司 一种高效n型太阳能电池组件
CN103107233A (zh) * 2012-12-06 2013-05-15 杭州赛昂电力有限公司 单晶硅太阳能电池及其制作方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728440A (zh) * 2008-10-22 2010-06-09 诺华光谱有限公司 太阳能转换器和复合转换器
CN102044582A (zh) * 2009-10-10 2011-05-04 中电电气(上海)太阳能科技有限公司 一种高效n型太阳能电池组件
CN103107233A (zh) * 2012-12-06 2013-05-15 杭州赛昂电力有限公司 单晶硅太阳能电池及其制作方法
CN103107233B (zh) * 2012-12-06 2016-08-10 杭州赛昂电力有限公司 单晶硅太阳能电池及其制作方法

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ASS Succession or assignment of patent right

Owner name: NINGBO EUREKA SOLAR TECHNOLOGY DEVELOPMENT CO., L

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Address after: Zhejiang city of Ningbo Province Wang Shanshan Lu Chun Industrial Park No. 1, zip code: 315176

Patentee after: Ningbo Ulica Solar Technology Development Co., Ltd.

Address before: No. 262, accord garden, Xinqiao East Road, Songjiang, Shanghai, zip code: 201612

Co-patentee before: Zheng Jun

Patentee before: Hu Hong Lord

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Address after: 168, Lane 262, Xinqiao East Road, Shanghai, Songjiang: 201612

Co-patentee after: Zheng Jun

Patentee after: Hu Hong Lord

Address before: Zhejiang city of Ningbo Province Wang Shanshan Lu Chun Industrial Park No. 1, zip code: 315176

Patentee before: Ningbo Ulica Solar Technology Development Co., Ltd.

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