CN2849968Y - Riveting structure of IC lead frame - Google Patents
Riveting structure of IC lead frame Download PDFInfo
- Publication number
- CN2849968Y CN2849968Y CN 200520119513 CN200520119513U CN2849968Y CN 2849968 Y CN2849968 Y CN 2849968Y CN 200520119513 CN200520119513 CN 200520119513 CN 200520119513 U CN200520119513 U CN 200520119513U CN 2849968 Y CN2849968 Y CN 2849968Y
- Authority
- CN
- China
- Prior art keywords
- chip
- lead
- wire
- heating panel
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4801—Structure
- H01L2224/48011—Length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model discloses a riveting structure of an integrated circuit lead frame. A radiating board and leads are formed by punching two metal sheets respectively, a position for placing a chip is arranged on the radiating board, and the radiating board and the leads are superposed together. The ends of all the leads, which are connected with the chip, are uniformly distributed near chip nodes, and one of the leads is riveted on the radiating board. The structure shortens the length of connecting gold wires, so not only the production cost of an integrated circuit is reduced, but also the stability of the integrated circuit is enhanced effectively. The new frame has wide range of application, and the produced integrated circuit good has the advantages of good heat radiating performance, big adaptation power and high reliability.
Description
Technical field
The utility model relates to a kind of circuit lead frame riveted construction.
Background technology
In the prior art, circuit lead frame as shown in Figure 1, comprise heating panel 1 " and lead-in wire 2 ", heating panel 1 " and lead-in wire 2 " moulding of sheet metal integrated punching directly used, heating panel 1 " on the position 11 of placing chip is arranged ", leaded 2 " end that is connected with chip is positioned at position 11 " and a side, one of them lead-in wire 2 " (being generally ground lead) and heating panel 1 " is connected, all the other go between 2 " and heating panel 1 " have a gap.During integrated encapsulation, the chip (not shown) is placed on heating panel 1 " on, will go between 2 with the spun gold (not shown) " couple together with the node of chip, encapsulation cuts rim charge again, promptly makes surface-mounted integrated circuit.The circuit lead frame of this structure, volume is little, heating panel 1 " can design thicker; be beneficial to heat radiation, still, lead-in wire 2 " limited amount, the scope of application is little, and its structure is unfavorable for that also punch forming more goes between, and in addition, adopts long spun gold to connect lead-in wire 2 during encapsulation " and the node of chip; not only processing bothers; the production cost height, and, increased the unsteadiness of product.
Also have a kind of circuit lead frame as shown in Figure 2, comprise heating panel 1 ' and lead-in wire 2 ', heating panel 1 ' and lead-in wire 2 ' are directly used the moulding of sheet metal integrated punching, leaded a 2 ' end that is connected with chip be located immediately at the residing position of chip node.During integrated encapsulation, the chip (not shown) is placed on heating panel 1 " go up (position that dotted line indicates), the node of chip is alignd with lead-in wire 2 ' and be connected, encapsulate again, cut rim charge, promptly make surface-mounted integrated circuit.The circuit lead frame of this structure, encapsulation process is easy, and product stability is good, and lead-in wire 2 ' quantity is many, applied widely, and still, volume is big, in order to save material, designs thinlyyer usually, is unfavorable for heat radiation.
In a word, all there are various defectives in the structure of circuit lead frame in the prior art, is further improved really, and the inventor has this case to produce through research then.
The utility model content
The purpose of this utility model is to provide a kind of circuit lead frame riveted construction, and its number of leads is many, and is applied widely, handling ease, and production cost is low, and product stability is good, and thermal diffusivity is good.
In order to reach above-mentioned purpose, solution of the present utility model is:
The circuit lead frame riveted construction, it is characterized in that: heating panel and lead-in wire are respectively by two metallic plate punching moulding, has the position of placing chip on the heating panel, heating panel and lead-in wire stack together, a leaded end that is connected with chip be evenly distributed near the chip node, and one of them the lead-in wire riveted on heating panel.
Described heating panel and lead-in wire are stacked, and the weldering spun gold face and the chip of lead-in wire are in same plane.
After adopting said structure, the utility model since with heating panel and lead-in wire respectively by two metallic plate punching moulding, so, can adopt thicker metallic plate punching moulding heating panel, be beneficial to heat radiation, adopt thin metallic plate punching formed lead, to save material; Heating panel and lead-in wire are stacked together, help increasing the quantity of lead-in wire, produce the product of multilead, application range of products is wider; During the integrated encapsulation of the utility model, chip is placed on the heating panel, lead-in wire is evenly distributed near the chip node, and the node of chip is alignd with lead-in wire, encapsulates again, cuts rim charge, promptly makes surface-mounted integrated circuit.This structure has shortened the length that connects spun gold, and not only handling ease has reduced the production cost of integrated circuit, and has effectively improved the stability of integrated circuit, further makes the perfect heat-dissipating of the integrated circuit of being produced, and it is big to adapt to power, the reliability height.
Description of drawings
Fig. 1 is a structural representation of commonly using product one;
Fig. 2 is a structural representation of commonly using product two;
Fig. 3 is a structural representation of the present utility model;
Fig. 4 is a processing riveted schematic diagram of the present utility model.
Embodiment
As shown in Figure 3, be that the utility model has disclosed a kind of circuit lead frame riveted construction.Heating panel 1 and lead-in wire 2 are respectively by two metallic plate punching moulding, cooperate shown in Figure 4, has the position 11 (sunk part among the figure) of placing the chip (not shown) on the heating panel 1, heating panel 1 and lead-in wire 2 stack together, leaded 2 ends that are connected with chip be evenly distributed near the chip node, and one of them lead-in wire 2 (placed in the middle that among the figure, ground connection usually) riveted is on heating panel 1.2 be connected with chip better in order to make respectively to go between, this embodiment is stacked with heating panel 1 and lead-in wire 2, and go between 2 weldering spun gold face and chip are in same plane.
During the integrated encapsulation of the utility model, chip is placed on the position 11 of placing chip on the heating panel 1, the node of chip is alignd with lead-in wire 2, and, encapsulate again, cut rim charge, promptly make surface-mounted integrated circuit with short spun gold connection.
The utility model encapsulation the time need not as prior art to connect with long spun gold and goes between 1 " and the node of chip, shortened the length of connection spun gold greatly, handling ease has reduced the production cost of integrated circuit, has effectively improved the stability of integrated circuit.And, the utility model since with heating panel 1 and lead-in wire 2 respectively by two metallic plate punching moulding, so, can adopt thicker metallic plate punching moulding heating panel 1, be beneficial to heat radiation, it is big to adapt to power, adopt thin metallic plate punching formed lead 2, to save material.In addition, heating panel 1 and lead-in wire 2 are stacked together, help increasing the quantity of lead-in wire 2, produce the product of multilead 2, application range of products is wider.Lead-in wire 2 is evenly distributed near the chip node in this structure, further makes the perfect heat-dissipating of the integrated circuit of being produced, the reliability height.
Claims (2)
1, circuit lead frame riveted construction, it is characterized in that: heating panel and lead-in wire are respectively by two metallic plate punching moulding, has the position of placing chip on the heating panel, heating panel and lead-in wire stack together, a leaded end that is connected with chip be evenly distributed near the chip node, and one of them the lead-in wire riveted on heating panel.
2, circuit lead frame riveted construction as claimed in claim 1 is characterized in that: heating panel and lead-in wire are stacked, and the weldering spun gold face and the chip of lead-in wire are in same plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520119513 CN2849968Y (en) | 2005-11-25 | 2005-11-25 | Riveting structure of IC lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520119513 CN2849968Y (en) | 2005-11-25 | 2005-11-25 | Riveting structure of IC lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2849968Y true CN2849968Y (en) | 2006-12-20 |
Family
ID=37522448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520119513 Expired - Fee Related CN2849968Y (en) | 2005-11-25 | 2005-11-25 | Riveting structure of IC lead frame |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2849968Y (en) |
-
2005
- 2005-11-25 CN CN 200520119513 patent/CN2849968Y/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: XIAMEN YONGHONG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: YONGHONG GROUP CO., LTD., XIAMEN Effective date: 20071214 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee |
Owner name: YONGHONG GROUP CO., LTD., XIAMEN Free format text: FORMER NAME OR ADDRESS: XIAMEN YONGHONG ELECTRONIC CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: No. 80-82, Qixing Road, Kaiyuan District, Fujian, Xiamen Province, China: 361000 Patentee after: Xiamen Yonghong Group Co.,Ltd. Address before: No. 80-82, Qixing Road, Kaiyuan District, Fujian, Xiamen Province, China: 361000 Patentee before: XIAMEN YONGHONG ELECTRONIC Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20071214 Address after: Fujian province Xiamen city Xiangan District Ma Zhen Xiaban Hung Road building on the north side, zip code: 361000 Patentee after: XIAMEN YONGHONG TECHNOLOGY Co.,Ltd. Address before: No. 80-82, Qixing Road, Kaiyuan District, Fujian, Xiamen Province, China: 361000 Patentee before: Xiamen Yonghong Group Co.,Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 Termination date: 20131125 |