CN2807482Y - High speed photoelectric detector table-board type chip - Google Patents
High speed photoelectric detector table-board type chip Download PDFInfo
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- CN2807482Y CN2807482Y CN 200520059828 CN200520059828U CN2807482Y CN 2807482 Y CN2807482 Y CN 2807482Y CN 200520059828 CN200520059828 CN 200520059828 CN 200520059828 U CN200520059828 U CN 200520059828U CN 2807482 Y CN2807482 Y CN 2807482Y
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Abstract
The utility model provides a high speed photoelectric detector table board type chip. A table board of the utility model is a positive table board and comprises a P region and an I region. The height H between the top and the bottom of the table board is equal to 2-4 mum. The utility model is characterized in that at least more than one step is arranged between the top and the bottom of the table board; a circular ring-shaped flat buffer region is formed between the adjacent steps, and the radial width of the circular ring-shaped flat buffer region is equal to 2-5 mum, wherein the thickness of a cap layer h1 of the first step which is downward from the top of the table board is equal to 0.9-1.2 mum, and the height h2 of each step which is downward after the first step is equal to 0.8-1.2 mum. Because a plurality of steps are formed between the top and the bottom of the table board, and the flat buffer region is arranged between the adjacent steps, glue can be uniformly coated on the table board, the passivation of the table board and contact conductors can be buffered in the flat buffer region, and the utility model can solve the problem that because a step between the top and the bottom of a table board is steep, the passivation of the table board and leading wires are difficult existing in the existing mode.
Description
Technical field
The utility model relates to a kind of semiconductor device, relates in particular to a kind of high-speed photodetector platform-type chip.
Background technology
The planar semiconductor technology that the chip of photodetector (PD) plane formula structure adopts, technology maturation, the rate that manufactures a finished product height, stability and good reliability.But the mos capacitance of the chip of this plane formula structure under pad occupies suitable ratio.At a high speed, more obvious in the small-area devices, can reach the size of PN junction junction capacitance.Therefore the chip of this plane formula structure just can not satisfy the high-speed photodetector chip fully to the broadband performance requirement, and high speed PD chips such as present 10GHz, 40GHz adopt the platform-type chip more.Fig. 1 is the structural representation of prior art PIN platform-type chip 10.Its table top is positive table top, P district (P type doped region), I district (intrinsic region), even the part of N district (N type doped region) is all accomplished on the table top, platform-type PD chip substrate adopts semi-insulated InP material, adopt the method for co-planar waveguide, the both positive and negative polarity of chip is made on same, eliminates the influence of parasitic parameter chip performance.Because the height between mesa top 11 and the table top bottom 12 is usually between 2～4 μ m, to the platform-type chip of this height, its step 13 is the separate unit rank, and step is too steep, if adopt conventional spinner gluing, then because action of centrifugal force, the mesa edge glue-line as thin as a wafer, develop, mesa edge is easily exposed during corrosion, the result is when mesa passivation or extraction electrode, zone in that the mesa edge appearance disconnects causes rate of finished products low, the technology failure.
Summary of the invention
For overcoming above shortcoming, the utility model provides a kind of high-speed photodetector platform-type chip, and its step is smooth, and gluing evenly, mesa passivation and contact conductor all realize easily.
For realizing above goal of the invention, the utility model provides a kind of high-speed photodetector platform-type chip, its table top is positive table top, comprise P district and I district, the height H of the top and bottom of this table top is 2～4 μ m, at least be provided with more than one step between the top and bottom of described table top, and forming a radial width between the adjacent step is the smooth buffering area of annular of 2～5 μ m, be that cap layer thickness h1 is 0.9～1.2 μ m by first downward step of the top of table top wherein, each downward thereafter shoulder height h2 is 0.8～1.2 μ m.
Be formed with 3 steps between the top and bottom of described table top.
Owing to be formed with a plurality of steps between mesa top in the said structure and the bottom, and being formed with a radial width between the adjacent step is the smooth buffering area of annular of 2～5 μ m, gluing is even, mesa passivation and contact conductor all can cushion at described smooth buffering area, can solve the problem that causes mesa passivation and lead-in wire difficulty in the platform-type chip manufacturing proces of existing separate unit rank because of mesa top to the step of bottom too suddenly.
Description of drawings
Fig. 1 represents the structural representation of prior art PIN platform-type chip;
Fig. 2 represents the mesa structure schematic diagram of high-speed photodetector platform-type chip of the present utility model;
Fig. 3 represents high-speed photodetector platform-type chip table schematic perspective view shown in Figure 2;
Fig. 4 represents high-speed photodetector platform-type chip profile schematic diagram shown in Figure 2.
Embodiment
Describe high-speed photodetector platform-type core of the present utility model in detail below in conjunction with accompanying drawing.
As Fig. 2, high-speed photodetector platform-type chip 20 shown in Figure 3, its table top is positive table top, and promptly the cross section of table top is up-small and down-big.Should determine the size of the first table top flat top surface to the requirement of electric capacity according to bandwidth, as the PD chip of 10GHz bandwidth, can select diameter of phi 25～Φ 35 μ m of mesa top 21 for use, to the chip of 40GHz, then the mesa top diameter should be littler; The top 21 of this table top is 2～4 μ m with the height H of bottom 22, form more than one at least step 23 between the top 21 of table top and the bottom 22, and forming a radial width between the adjacent step is the smooth buffering area 24 of annular of 2～5 μ m, be that cap layer thickness h1 is approximately 0.9～1.2 μ m by mesa top 21 first downward steps wherein, each shoulder height h2 downward by this cap layer step is approximately 0.8～1.2 μ m.Even the table top of this structure adopts conventional centrifugal glue spreader gluing, its mesa edge all can keep enough bondline thicknesss, in development and corrosion process, exposing and areas of disconnection can not appear in mesa edge, thereby can guarantee that mesa passivation and contact conductor technology are easier to carry out the chip yield height.
The specific implementation method of high-speed photodetector platform-type chip 20 of the present utility model is as follows:
Substrate cleans, drying: clean with organic solvent toluene, acetone, ethanol successively, use deionized water rinsing more than 20 times again, N
2Dry up stand-by.
Large tracts of land Zn diffuses to form the P district.
On substrate, make first table top figure according to a conventional method with lithography mask version, qualified with the microscope measurement pattern size of multiplication factor more than 500 times, defectives such as neat in edge, free of pinholes, island.
With phosphoric acid, hydrochloric acid mixed solution the cap layer is corroded (when the cap layer is the InP material), form positive table top.Because the cap layer thickness is generally 0.9～1.2 μ m, therefore, the height of first step is the thickness of cap layer, and satisfied height is the designing requirement of 0.8～1.2 μ m.
The making of second step, photoetching is with first step.With the corrosive liquid corrosion InGaAs material of sulfuric acid, hydrogen peroxide, water, to the table top PD chip of 10GHz, the thickness of its absorbed layer is used two and is reached the table top that forms this material layer with upper table surface usually greater than 1.2 μ m.Current corrosion requires the control corrosion rate, because wet etching is repeated relatively poor, each corrosion will have been estimated etching extent, can adopt repeatedly corrosion, corrode at every turn,, satisfy the designing requirement of 0.8～1.2 μ m up to the height of secondary table top with accurate step instrument test corrosion depth.
Then corrode the 3rd step with above-mentioned same method.
With PECVD method deposit one deck gross thickness is 8000～12000 composite dielectric films 30; Ground floor adopts 50～150 ℃ of low temperature during deposit, thickness 50～150 , and elevated temperature to 250～350 ℃ deposit film after this, thickness is 8000～12000 .
Remove the composite dielectric film 30 of mesa top, deposit anti-reflection film 40 again under 300～400 ℃, for the light of 1310nm wavelength, its thickness is about 1800 ; For the light of 1550nm wavelength, its thickness is about 1950 .
Photoetching N electrode hole.
In order to improve the performance of chip, more for a long time, last table top is produced on place, N hole in number of steps, and this can make the flat region of N table top wideer, more helps the passivation and the lead-in wire of table top.
Evaporation Au or Au/Ge/Ni/Au, thickness 1000～1500 adopt lift-off technology to remove N hole metal film in addition.
Photoetching P electrode hole.
Evaporation Cr/Au or Ti/Pt/Au, gross thickness 3500～5000 .
Make P contact conductor 50 and N contact conductor 60 simultaneously by lithography, produce required table top PD chip 20.As shown in Figure 4.
Claims (2)
1, a kind of high-speed photodetector platform-type chip, its table top is positive table top, comprise P district and I district, the top of this table top (21) is 2～4 μ m with the height H of bottom (22), it is characterized in that, at least be provided with more than one step (23) between the top of described table top (21) and bottom (22), and forming a radial width between the adjacent step is the smooth buffering area of annular (24) of 2～5 μ m, be that cap layer thickness h1 is 0.9～1.2 μ m by first downward step of the top (21) of table top wherein, each downward thereafter shoulder height h2 is 0.8～1.2 μ m.
2, high-speed photodetector platform-type chip according to claim 1 is characterized in that, is formed with 3 steps (23) between the top of described table top (21) and bottom (22).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520059828 CN2807482Y (en) | 2005-06-09 | 2005-06-09 | High speed photoelectric detector table-board type chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520059828 CN2807482Y (en) | 2005-06-09 | 2005-06-09 | High speed photoelectric detector table-board type chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2807482Y true CN2807482Y (en) | 2006-08-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520059828 Expired - Lifetime CN2807482Y (en) | 2005-06-09 | 2005-06-09 | High speed photoelectric detector table-board type chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100463232C (en) * | 2006-12-20 | 2009-02-18 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
-
2005
- 2005-06-09 CN CN 200520059828 patent/CN2807482Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100463232C (en) * | 2006-12-20 | 2009-02-18 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20150609 Granted publication date: 20060816 |