CN111029417A - Photoelectric detector and preparation method thereof - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 59
- 229920002120 photoresistant polymer Polymers 0.000 claims description 50
- 230000008569 process Effects 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 230000005525 hole transport Effects 0.000 claims description 19
- 238000000227 grinding Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000011112 process operation Methods 0.000 abstract description 6
- 239000002096 quantum dot Substances 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000002611 lead compounds Chemical class 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229940056932 lead sulfide Drugs 0.000 description 2
- 229910052981 lead sulfide Inorganic materials 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 2
- -1 specifically Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a photoelectric detector and a preparation method thereof, wherein the photoelectric detector comprises a semiconductor substrate, an insulating layer and an electrode structure, wherein a first electrode is formed on the semiconductor substrate; the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; the electrode structure fills the trench. According to the invention, the groove is filled with the electrode structure, so that the height drop of the electrode structure in each photoelectric detector is reduced, and the subsequent process operation is facilitated.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a photoelectric detector and a preparation method thereof.
Background
Photoelectric detectors are important optoelectronic components in the photoelectric information industry at present, and are often used in the fields of sensing, detection, imaging and the like. At present, the traditional photoelectric detector materials such as Si, Ge, InGaAs and the like have the defects of complex preparation process, high cost and the like, researchers have started to utilize quantum dot materials to prepare high-performance photoelectric detectors, and the performance of the photoelectric detectors can exceed that of the traditional photoelectric detectors on the market by more than one order of magnitude.
The quantum dot is a novel nano photoelectric material, and as the particle size is several to dozens of nanometers and smaller than the own Bohr radius of the material, electrons can be subjected to a confinement effect on a three-dimensional size when moving inside the quantum dot, so that the quantum dot has the advantages of adjustable absorption spectrum, higher extinction coefficient and the like. Meanwhile, the quantum dots can be used for preparing devices by a solution method, so that the process requirement and the preparation cost are greatly simplified, and the future application prospect is wide.
The photoelectric detector prepared at present has the advantages of easy-to-solve processability, low-cost manufacturing, tunable band gap, flexibility and the like, but the size of the photoelectric detector has large deviation due to the immature existing process, so that the photoelectric detector mostly stays in a laboratory stage, and large-scale device manufacturing is difficult to realize.
Disclosure of Invention
The invention aims to provide a photoelectric detector and a preparation method thereof, which are used for solving the problem of large size deviation of the photoelectric detector in the prior art, so that the photoelectric detector can realize large-scale device manufacturing.
In order to solve the above problem, the present invention provides a photodetector including:
a semiconductor substrate on which a first electrode is formed;
the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; and
an electrode structure filling the trench.
Optionally, the semiconductor substrate includes a base, and an initial insulating layer and a metal interconnection layer formed on the base, the metal interconnection layer is embedded in the initial insulating layer, and the first electrode layer is electrically connected to the metal interconnection layer.
Optionally, the thickness of the insulating layer is the same as the thickness of the electrode structure.
The electrode structure sequentially comprises a photosensitive material layer and a second electrode layer from bottom to top, and the photosensitive material layer and the second electrode layer sequentially cover the inner wall of the groove.
More advantageously, the electrode structure further comprises a first transfer layer and/or a second transfer layer, the first transfer layer being located between the trench inner wall and the photosensitive material layer, the second transfer layer being located between the photosensitive material layer and the second electrode layer.
Further, when the first transport layer is a hole transport layer, and/or the second transport layer is an electron transport layer, the first electrode layer is an anode layer;
when the first transport layer is an electron transport layer, and/or the second transport layer is a hole transport layer, the first electrode layer is a cathode layer.
In another aspect, the present invention provides a method for manufacturing a photodetector, including the steps of:
providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate;
sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer;
etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer;
forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and
and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector.
Optionally, sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, where the patterned photoresist layer has an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, including:
depositing the insulating layer on the semiconductor substrate by chemical vapor deposition or physical vapor deposition, wherein the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and the first electrode layer comprises at least one first electrode; and
and forming a patterned photoresist layer on the insulating layer through photoetching processes such as coating, exposure, development and the like, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, the shape of the opening is the same as that of the first electrode, and the area of the opening is the same as that of the first electrode.
Optionally, an electrode structure is formed on the semiconductor substrate, the electrode structure fills the trench and also covers the surface of the insulating layer, and specifically includes:
and sequentially forming a first transmission layer, a photosensitive material layer, a second transmission layer and a second electrode layer on the semiconductor substrate and in the groove by spin coating, blade coating, spray coating, thermal evaporation or electron beam evaporation methods to form an electrode structure.
Optionally, removing the electrode structure on the surface of the insulating layer by a grinding process, and retaining the electrode structure in the trench to form the photodetector specifically includes:
and removing the electrode structure on the surface of the insulating layer through a chemical mechanical polishing process, and reserving the electrode structure in the groove to form the photoelectric detector.
Compared with the prior art, the method has the following beneficial effects:
the invention provides a photoelectric detector and a preparation method thereof, wherein the photoelectric detector comprises a semiconductor substrate, an insulating layer and an electrode structure, wherein a first electrode is formed on the semiconductor substrate; the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; the electrode structure fills the trench. According to the invention, the groove is filled with the electrode structure, so that the height drop of the electrode structure in each photoelectric detector is reduced, and the subsequent process operation is facilitated.
The preparation method of the photoelectric detector comprises the following steps: providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate; sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer; etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer; forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector. The invention adopts the patterned photoresist layer on the insulating layer as the conventional material matching, the process is mature, and the grinding process replaces the prior dry etching process, so that the photoelectric detector can realize the large-scale device manufacturing.
Drawings
FIGS. 1a-1c are schematic structural views of steps in a method of fabricating a photodetector;
FIG. 2 is a schematic flow chart illustrating a method for fabricating a photodetector according to an embodiment of the present invention;
fig. 3a to 3e are schematic structural diagrams in steps of a method for manufacturing a photodetector according to an embodiment of the present invention.
Description of reference numerals:
in FIGS. 1a-1 c:
10-a silicon substrate; 11-an insulating layer; 12-a metal interconnect layer; 13-a cathode layer; 21-electron transport layer; 22-quantum dot layer; 23-a hole transport layer; 24-an anode layer; 30-a photoresist layer;
in FIGS. 3a-3 e:
100-a semiconductor substrate; 110-a substrate; 120-a primary insulating layer; 130-metal interconnect layer;
210-a first electrode layer; 211-a first electrode;
300-an insulating layer; 310-a photoresist layer;
400-electrode structure; 410-a first transport layer; 420-a layer of photosensitive material; 430-a second transport layer; 440-a second electrode layer;
a-an opening; b-a trench.
Detailed Description
The conventional method for manufacturing a photodetector includes the steps of:
step S11: referring to fig. 1a, a silicon substrate 10 is provided, an insulating layer 11, a metal interconnection layer 12 and a cathode layer 13 are formed on the silicon substrate 10, the metal interconnection layer 12 is embedded in the insulating layer 11, and the cathode layer 13 at least covers the metal interconnection layer 12;
step S12: referring to fig. 1b, depositing an electron transport layer 21, a quantum dot layer 22, a hole transport layer 23, an anode layer 24 and a patterned photoresist layer 30 on the silicon substrate 10 in sequence, wherein the electron transport layer 21 covers the insulating layer 11 and the anode 13, the patterned photoresist layer 30 covers the anode layer 24 directly above the cathode layer 13, and the quantum dot layer 22 is made of a quantum dot material, such as a lead compound;
step S13: referring to fig. 1c, the anode layer 24, the hole transport layer 23, the quantum dot layer 22 and the electron transport layer 21 are sequentially etched by a dry etching process using the patterned photoresist layer 30 as a mask to expose the insulating layer 11, and the remaining photoresist layer 30 is removed by a wet cleaning process to form the photodetector.
The inventor has found that, in step S13 of the above manufacturing method, the hole transport layer 23 and the electron transport layer 21 are mostly made of organic materials or metal oxides, the quantum dot layer 22 is mostly made of lead compound materials, which are not commonly used in integrated circuits, and their matching is not a conventional way, so that there is little research foundation for their dry etching process and wet cleaning process, and therefore, the dry etching process and wet cleaning process of these materials are not mature, and at the same time, the whole process is complicated, so that it is difficult to realize large-scale device manufacturing for the photodetector.
The inventors have also found that the stacked structure (the electron transport layer 21, the quantum dot layer 22, the hole transport layer 23, and the cathode 24 stacked in this order) in the photodetector prepared by the above method causes the photodetector to have a height difference that is not favorable for the subsequent process operation. Meanwhile, due to the immaturity of the dry etching process and the wet cleaning process in the step S13, the obtained stacked structure in the photodetector has problems of over-etching or less etching, and the size of the obtained photodetector is inaccurate.
Based on the research, the invention provides a photoelectric detector and a preparation method thereof, wherein the photoelectric detector comprises a semiconductor substrate, an insulating layer and an electrode structure, wherein a first electrode is formed on the semiconductor substrate; the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; the electrode structure fills the trench. According to the invention, the groove is filled with the electrode structure, so that the height drop of the electrode structure in each photoelectric detector is reduced, and the subsequent process operation is facilitated.
The preparation method of the photoelectric detector comprises the following steps: providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate; sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer; etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer; forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector. The invention adopts the patterned photoresist layer on the insulating layer as the conventional material matching, the process is mature, and the grinding process replaces the prior dry etching process, so that the photoelectric detector can realize the large-scale device manufacturing.
A photodetector and a method for manufacturing the same according to the present invention will be described in further detail below. The present invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
The embodiment provides a preparation method of a photoelectric detector. Fig. 2 is a schematic flow chart of a method for manufacturing a photodetector according to this embodiment. As shown in fig. 2, the preparation method comprises the following steps:
step S21: providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate;
step S22: sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer;
step S23: etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer;
step S24: forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and
step S25: and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector.
The following describes the fabrication of the photodetector of the present invention in detail with reference to specific embodiments and fig. 3a-3 e.
As shown in fig. 3a, step S21 is performed first, and a semiconductor substrate 100 is provided, wherein the semiconductor substrate 100 has a first electrode layer 210 formed thereon.
The semiconductor substrate 100 includes a base 110, and an initial insulating layer 120 and a metal interconnection layer 130 formed on the base 110, wherein the metal interconnection layer 130 is embedded in the initial insulating layer 120, and the first electrode layer 210 is electrically connected to the metal interconnection layer 130.
In the present embodiment, the substrate 110 may provide an operation platform for a subsequent process, and may be any substrate for carrying components of a semiconductor integrated circuit, such as a bare die, or a wafer processed by an epitaxial growth process, and in detail, the substrate 110 may be, for example, a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GOI) substrate, a bulk silicon (bulk silicon) substrate, a silicon substrate, a germanium substrate, a silicon-germanium substrate, an indium phosphide (InP) substrate, a silicon carbide substrate, a glass substrate, or a III-V compound substrate (e.g., a gallium nitride substrate or a gallium arsenide substrate, etc.). Other structural layers may be formed between the substrate 110 and the initial insulating layer 120, which are not described herein since they are not related to the technical problem to be solved by the present disclosure.
The first electrode layer 210 includes at least one first electrode 211, for example, when there are at least two first electrodes 211, adjacent first electrodes 211 are disposed at intervals, and each first electrode 211 can form a photodetector in a subsequent process. The size of the cross-sectional area of each of the first electrodes 211 (i.e., the area where the first electrode 211 covers the metal interconnection layer 130, or the metal interconnection layer 130 and the initial insulating layer 120) determines the size of the cross-sectional area (the cross-section perpendicular to the height direction) of each of the photodetectors. The cross-section of the first electrode 211 covering the metal interconnection layer 130, or the metal interconnection layer 130 and the initial insulating layer 120, is, for example, square, and has an area of, for example, 1 μm by 1 μm to 10 μm by 10 μm, that is, the cross-sectional area of each of the photodetectors is, for example, 1 μm by 1 μm to 10 μm by 10 μm. The material used for the initial insulating layer 120, the metal interconnection layer 130 and the first electrode layer 210 is a conductive material that is stable in a CMOS process, and in detail, the material of the initial insulating layer 120 is, for example, an oxide (specifically, silicon oxide), the material of the metal interconnection layer 130 is, for example, a metal, specifically, copper or aluminum, and the first electrode layer 210 is, for example, a material with high environmental stability, specifically, titanium nitride or aluminum.
As shown in fig. 3b, next, step S22 is performed to sequentially form an insulating layer 300 and a patterned photoresist layer 310 on the semiconductor substrate 100, where the patterned photoresist layer 310 has an opening a above the first electrode layer 210, and the insulating layer 300 covers the surface of the semiconductor substrate 100 and the surface of the first electrode layer 210.
The method comprises the following steps:
first, the insulating layer 300 is deposited on the semiconductor substrate 100 by CVD (chemical vapor deposition) or PVD (physical vapor deposition), and the insulating layer 300 covers the surface of the semiconductor substrate 100 and the surface of the first electrode layer 210, that is, the insulating layer 300 covers the surface of the initial insulating layer 120 and the surface of the first electrode layer 210. The material of the insulating layer 300 is, for example, an oxide (specifically, silicon oxide), and the thickness of the insulating layer 300 ranges from 100nm to 1000 nm.
Next, a patterned photoresist layer 310 is formed on the insulating layer 300 through a photolithography process such as coating, exposing, and developing, the patterned photoresist layer 310 has an opening above the first electrode layer 210, and the opening a has the same shape as the first electrode and the same opening area as the cross-sectional area of the first electrode.
As shown in fig. 3c, step S23 is performed to etch the insulating layer 300 at the opening a and expose the first electrode layer 210 by using the patterned photoresist layer 310 as a mask, so as to form a trench b, and remove the remaining photoresist layer 310.
Specifically, first, the patterned photoresist layer 310 is used as a mask, and the insulating layer 300 at the opening a is etched by a dry etching process to expose the first electrode layer 210, so as to form a trench b. The trenches serve to define the shape and area of the cross-section of the subsequently formed electrode structure 400.
Then, the remaining photoresist layer 310 is removed by a wet cleaning process, and it can be known that the removal of the photoresist layer on the conventional material (oxide) by the wet cleaning process is mature and easy to implement.
As shown in fig. 3d, next, step S24 is performed to form an electrode structure 400 on the semiconductor substrate 100, wherein the electrode structure 400 fills the trench b and also covers the surface of the insulating layer 300.
The electrode structure 400 may include, from bottom to top, a photosensitive material layer 420 and a second electrode layer 440 in sequence, and at this time, the first electrode layer 210 and the second electrode layer 440 have no difference between an anode layer and a cathode layer, that is, the first electrode layer 210 may be an anode layer or a cathode layer, and when the first electrode layer 210 is an anode layer, the second electrode layer 440 is a cathode layer correspondingly; when the first electrode layer 210 is a cathode layer, the second electrode layer 440 is correspondingly an anode layer.
The electrode structure 400 may further include, from bottom to top, a first transmission layer 410, a photosensitive material layer 420, and a second electrode layer 440 in sequence, or may also include, from bottom to top, a photosensitive material layer 420, a second transmission layer 430, and a second electrode layer 440 in sequence, or may also include, from bottom to top, a first transmission layer 410, a photosensitive material layer 420, a second transmission layer 430, and a second electrode layer 440 in sequence. When the first transport layer 410 is a hole transport layer, and/or the second transport layer 430 is an electron transport layer, the first electrode layer 210 is an anode layer, and the second electrode layer 440 is a cathode layer; when the first transport layer 410 is an electron transport layer and the second transport layer 430 is a hole transport layer, the first electrode layer 210 is a cathode layer and the second electrode layer 440 is an anode layer. In this embodiment, the electrode structure 400 sequentially includes, from bottom to top, a first transport layer 410, a photosensitive material layer 420, a second transport layer 430, and a second electrode layer 440, where the first transport layer 410 is an electron transport layer, and the second transport layer 430 is a hole transport layer.
The method specifically comprises the following steps:
the first transmission layer 410, the photosensitive material layer 420, the second transmission layer 430 and the second electrode layer 440 are sequentially deposited on the semiconductor substrate 100 by spin coating, spray coating, blade coating, magnetron sputtering or electron beam evaporation. The first transfer layer 410, the photosensitive material layer 420, the second transfer layer 430, and the second electrode layer 440 sequentially cover the inner walls (the bottom and the side walls) of the trench b, and also sequentially cover the surface of the insulating layer 300.
In this step, the material of the electron transport layer is, for example, [6, 6] -phenyl-C61-isopropyl butyrate (PCBM), and the thickness of the electron transport layer ranges from 10nm to 50 nm; the material of the hole transport layer is, for example, poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid) (i.e., PEDOT: PSS), the thickness of the hole transport layer ranging from 10nm to 50 nm; the photosensitive material layer 420 comprises a quantum dot layer, a quantum well layer and an organic photosensitive layer, the material of the photosensitive material layer 420 can comprise an organic photosensitive material or a lead compound quantum dot, specifically, a lead sulfide quantum dot and a lead selenide quantum dot, and the thickness of the photosensitive material layer 420 ranges from 30nm to 500 nm; the second electrode layer 440 is, for example, a transparent electrode layer, and the material of the second electrode layer is, for example, Indium Tin Oxide (ITO) or fluorine-doped tin oxide (FTO), and the thickness of the second electrode layer 440 ranges from 50nm to 200 nm. The depth of the trench b (i.e., the thickness of the insulating layer 300) is preferably the same as the height of the electrode structure 400, and in other embodiments, the depth of the trench may be slightly greater than the height of the electrode structure; alternatively, the depth of the trench may be smaller than the height of the electrode structure, and it is only necessary that the height of each of the remaining electrode structures 400 after the subsequent grinding process meets the requirement, specifically, the height of the remaining portion of the second electrode layer 440 after the grinding process meets the requirement.
As shown in fig. 3e, step S25 is performed to remove the electrode structure 400 on the surface of the insulating layer 300 by a grinding process and leave the electrode structure 400 in the trench b to form a photodetector. Specifically, the electrode structure 400 on the surface of the insulating layer 300 is removed by a Chemical Mechanical Polishing (CMP) process, and the electrode structure 400 in the trench b is retained to form the photodetector, so that it can be seen that the electrode structure 400 in each of the obtained photodetectors has no height difference, which is convenient for subsequent process operations, and meanwhile, the original dry etching process is replaced by the polishing process, so that the process steps are simple, and the photodetector can be manufactured in a large scale.
Referring to fig. 3a to 3e, the photodetector provided in the present embodiment includes a semiconductor substrate 100 and a first electrode layer 210, the semiconductor substrate 100 includes a base 110, and an initial insulating layer 120 and a metal interconnection layer 130 formed on the base 110, the metal interconnection layer 130 is embedded in the initial insulating layer 120, and the first electrode layer 210 is electrically connected to the metal interconnection layer 130. An insulating layer 300 is formed on the first electrode layer 210 and the initial insulating layer 120, a trench b is formed in the insulating layer 300, the trench b penetrates through the initial insulating layer 120 and exposes the first electrode layer 210, the first electrode layer 210 includes at least one first electrode 211, an electrode structure 400 is formed in the trench b, the height of the electrode structure 400 is the same as the depth of the trench b, the shape of the trench b is the same as that of the first electrode layer 210, and the cross-sectional area of the trench b is the same as that of the first electrode 211. Since the electrode structure 400 is formed in the trench b, the trench b defines the shape and cross-sectional area of each photodetector. The cross-sectional area of each of the photodetectors is, for example, 1 μm to 10 μm. The material of the initial insulating layer 120 is, for example, an oxide (e.g., silicon oxide), the material of the metal interconnection layer 130 is, for example, a metal, e.g., copper or aluminum, and the first electrode layer 210 is, for example, a conductive material with high environmental stability, e.g., titanium nitride, aluminum, gold or silver. The material of the insulating layer 300 is, for example, an oxide (specifically, silicon oxide), and the thickness of the insulating layer 300 ranges from 300nm to 1000 nm.
The electrode structure 400 sequentially includes, from bottom to top, a first transmission layer 410, a photosensitive material layer 420, a second transmission layer 430, and a second electrode layer 440, and the first transmission layer 410, the photosensitive material layer 420, the second transmission layer 430, and the second electrode layer 440 sequentially cover the inner wall of the trench b.
The first electrode layer 210 includes at least one first electrode 211, for example, when there are at least two first electrodes 211, adjacent first electrodes 211 are disposed at intervals, and each first electrode 211 and the electrode structure 400 above the first electrode 211 form a photodetector.
The electrode structure 400 may include, from bottom to top, a photosensitive material layer 420 and a second electrode layer 440 in sequence, and at this time, the first electrode layer 210 and the second electrode layer 440 have no difference between an anode layer and a cathode layer, that is, the first electrode layer 210 may be an anode layer or a cathode layer, and when the first electrode layer 210 is an anode layer, the second electrode layer 440 is correspondingly a cathode layer; when the first electrode layer 210 is a cathode layer, the second electrode layer 440 is correspondingly an anode layer.
The electrode structure 400 may further include, from bottom to top, a first transmission layer 410, a photosensitive material layer 420, and a second electrode layer 440 in sequence, or may also include, from bottom to top, a photosensitive material layer 420, a second transmission layer 430, and a second electrode layer 440 in sequence, or may also include, from bottom to top, a first transmission layer 410, a photosensitive material layer 420, a second transmission layer 430, and a second electrode layer 440 in sequence. When the first transport layer 410 is a hole transport layer, and/or the second transport layer 430 is an electron transport layer, the first electrode layer 210 is an anode layer, and the second electrode layer 440 is a cathode layer; when the first transport layer 410 is an electron transport layer and the second transport layer 430 is a hole transport layer, the first electrode layer 210 is a cathode layer and the second electrode layer 440 is an anode layer. In this embodiment, the electrode structure 400 sequentially includes, from bottom to top, a first transport layer 410, a photosensitive material layer 420, a second transport layer 430, and a second electrode layer 440, where the first transport layer 410 is an electron transport layer, and the second transport layer 430 is a hole transport layer.
The material of the electron transport layer is [6, 6] -phenyl-C61-isopropyl butyrate (PCBM) or titanium dioxide (TiO2), and the thickness of the electron transport layer ranges from 10nm to 50 nm; the material of the hole transport layer may be poly (3, 4-ethylenedioxythiophene): at least one of poly (styrene sulfonate) (i.e., PEDOT: PSS), 2',7,7' -tetra [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (spiro-OMeTAD), molybdenum trioxide (MoO3), and poly-3-hexylthiophene (P3HT), wherein the thickness of the hole transport layer ranges from 10nm to 50 nm; the photosensitive material layer 420 includes a quantum dot layer, a quantum well layer, and an organic photosensitive layer, the material of the photosensitive material layer 420 may include an organic photosensitive material or a lead compound quantum dot (specifically, a lead sulfide quantum dot, a lead selenide quantum dot), and the thickness of the photosensitive material layer 420 ranges from 30nm to 500 nm; the second electrode layer 440 is, for example, a transparent electrode layer, and is made of, for example, Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), or aluminum-doped indium tin oxide (AZO), and a thickness of the second electrode layer 440 ranges from 50nm to 200 nm.
In summary, the present invention provides a photodetector and a method for manufacturing the same, where the photodetector includes a semiconductor substrate, an insulating layer, and an electrode structure, where a first electrode is formed on the semiconductor substrate; the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; the electrode structure fills the trench. According to the invention, the groove is filled with the electrode structure, so that the height drop of the electrode structure in each photoelectric detector is reduced, and the subsequent process operation is facilitated.
The preparation method of the photoelectric detector comprises the following steps: providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate; sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer; etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer; forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector. The invention adopts the patterned photoresist layer on the insulating layer as the conventional material matching, the process is mature, and the grinding process replaces the prior dry etching process, so that the photoelectric detector can realize the large-scale device manufacturing.
In addition, it should be noted that the description of the terms "first", "second", and the like in the specification is only used for distinguishing each component, element, step, and the like in the specification, and is not used for representing a logical relationship or a sequential relationship between each component, element, step, and the like, unless otherwise specified or indicated.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A photodetector, comprising:
a semiconductor substrate on which a first electrode is formed;
the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and is provided with a groove which penetrates through the insulating layer and exposes the first electrode layer; and
an electrode structure filling the trench.
2. The photodetector of claim 1, wherein the semiconductor substrate comprises a base, and an initial insulating layer and a metal interconnection layer formed on the base, the metal interconnection layer being embedded in the initial insulating layer, the first electrode layer being electrically connected to the metal interconnection layer.
3. The photodetector of claim 1, wherein a thickness of the insulating layer is the same as a thickness of the electrode structure.
4. The photodetector of claim 3, wherein the electrode structure comprises a photosensitive material layer and a second electrode layer in sequence from bottom to top, and the photosensitive material layer and the second electrode layer sequentially cover the inner wall of the trench.
5. The photodetector of claim 4, wherein the electrode structure further comprises a first transmission layer and/or a second transmission layer, the first transmission layer being located between the trench inner wall and the photosensitive material layer, the second transmission layer being located between the photosensitive material layer and a second electrode layer.
6. The photodetector of claim 5,
when the first transport layer is a hole transport layer and/or the second transport layer is an electron transport layer, the first electrode layer is an anode layer and the second electrode layer is a cathode layer;
when the first transport layer is an electron transport layer and/or the second transport layer is a hole transport layer, the first electrode layer is a cathode layer and the second electrode layer is an anode layer.
7. A method for manufacturing a photodetector, comprising the steps of:
providing a semiconductor substrate, wherein a first electrode layer is formed on the semiconductor substrate;
sequentially forming an insulating layer and a patterned photoresist layer on the semiconductor substrate, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, and the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer;
etching the insulating layer at the opening by taking the patterned photoresist layer as a mask, exposing the first electrode layer to form a groove, and removing the residual photoresist layer;
forming an electrode structure on the semiconductor substrate, wherein the electrode structure fills the groove and also covers the surface of the insulating layer; and
and removing the electrode structure on the surface of the insulating layer through a grinding process, and reserving the electrode structure in the groove to form the photoelectric detector.
8. The method according to claim 7, wherein an insulating layer and a patterned photoresist layer are sequentially formed on the semiconductor substrate, the patterned photoresist layer has an opening above the first electrode layer, and the insulating layer covers a surface of the semiconductor substrate and a surface of the first electrode layer, and specifically comprises:
depositing the insulating layer on the semiconductor substrate by chemical vapor deposition or physical vapor deposition, wherein the insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, and the first electrode layer comprises at least one first electrode; and
and forming a patterned photoresist layer on the insulating layer through photoetching processes such as coating, exposure, development and the like, wherein the patterned photoresist layer is provided with an opening above the first electrode layer, the shape of the opening is the same as that of the first electrode, and the area of the opening is the same as that of the cross section of the first electrode.
9. The method for manufacturing a photodetector according to claim 7, wherein forming an electrode structure on the semiconductor substrate, the electrode structure filling the trench and covering a surface of the insulating layer, specifically comprises:
and sequentially forming a first transmission layer, a photosensitive material layer, a second transmission layer and a second electrode layer on the semiconductor substrate and in the groove by spin coating, blade coating, spray coating, thermal evaporation or electron beam evaporation methods to form an electrode structure.
10. The method for manufacturing a photodetector according to claim 7, wherein the step of removing the electrode structure on the surface of the insulating layer by a grinding process and retaining the electrode structure in the trench to form the photodetector comprises:
and removing the electrode structure on the surface of the insulating layer through a chemical mechanical polishing process, and reserving the electrode structure in the groove to form the photoelectric detector.
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